共查询到20条相似文献,搜索用时 15 毫秒
1.
Ji Hye Kim Dong Hyeop ShinHyuk Sang Kwon Byung Tae Ahn 《Current Applied Physics》2014,14(12):1803-1808
Sn-based thin films as new buffer layer for Cd-free Cu(In,Ga)Se2 (CIGS) solar cells were developed. The Sn(O,S)2 films were formed on CIGS substrates by chemical bath deposition from an alkaline ammonia solution by reacting tin(IV) chloride with thiourea. Optimization of the growth process allowed the smooth and conformal coverage of the films on the CIGS substrates with a thickness of 20 nm that was a self-limited thickness in the chemical bath deposition process. XPS analysis revealed that the as-deposited films contained Sn–O, Sn–OH, and Sn–S bondings and the ratio of Sn–S bonding to Sn–O bonding was 0.3. The CIGS solar cell fabricated with a 20-nm thick Sn(O,S)2 buffer layer had the best efficiency of 11.5% without AR coating. The open circuit voltage, short circuit current, and fill factor were 0.55 V, 34.4 mA/cm2, and FF = 0.61, respectively. The open circuit voltage and fill factor were low compared to the conventional CIGS solar cell with a 50-nm thick CdS buffer due to too thin Sn(O,S)2 buffer layer. 相似文献
2.
J.G. GarzaS. Shaji A.C. RodriguezT.K. Das Roy B. Krishnan 《Applied Surface Science》2011,257(24):10834-10838
Silver antimony selenide (AgSbSe2) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb2S3), silver selenide (Ag2Se), selenium (Se) and silver (Ag). Sb2S3 thin film was prepared from a chemical bath containing SbCl3 and Na2S2O3, Ag2Se from a solution containing AgNO3 and Na2SeSO3 and Se thin films from an acidified solution of Na2SeSO3, at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 °C in vacuum (10−3 Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe2 or AgSb(S,Se)2 depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe2/Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed Voc = 435 mV and Jsc = 0.08 mA/cm2 under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe2 as an absorber material by a non-toxic selenization process is achieved. 相似文献
3.
《Current Applied Physics》2015,15(3):383-388
(Zn,Mg)O (ZMO) buffer layer has attracted attention for having the potential to control the conduction band offset of buffer layer and large band-gap (Eg) Cu2ZnSn(S,Se)4 (CZTSSe) absorber interface, where the ZMO layer is deposited by the sputtering. However, the solar cell efficiency is decreased with the ZMO layer as compared with the CdS layer. The decrease in conversion efficiency is attributed to the sputtering damage on the absorber and high light reflection from the surfaces of CZTSSe solar cells. To completely suppress the damage, a CdS layer with very thin thickness of 20 nm is inserted between the ZMO layer and the CZTSSe layer. In addition, MgF2 layers are deposited on CZTSSe solar cells as anti-reflection coating. Ultimately, the solar cell with multi-buffer layer of ZMO/thin-CdS is almost same level as that with the CdS layer. Therefore, the multi-buffer layer can be an appropriate buffer layer of the large-Eg CZTSSe layer. 相似文献
4.
Yoji Akaki Kyohei Yamashita Tsuyoshi Yoshitake Shigeuki Nakamura Satoru Seto Takahiro Tokuda Kenji Yoshino 《Physica B: Condensed Matter》2012,407(15):2858-2860
We characterized AgInS2 thin films prepared by vacuum evaporation. In the case of thin films annealed at 400 °C, diffraction peaks were observed only for the chalcopyrite AgInS2 phase. The chemical composition of the thin films annealed at 400 °C was 26.5 at% Ag, 23.8 at% In, and 49.7 at% S. PL spectra of the AgInS2 thin films at 10.7 K showed peaks at 1.70, 1.80, and 1.83 eV. The PL peak at1.80 eV was attributed to sulfur deficiency. 相似文献
5.
Superstrate-type Cu(In,Ga)Se2 (CIGS) thin film solar cells were fabricated using Zn1−xMgxO buffer layers. Due to the diffusion of Cd into CIGS during the growth of the CIGS layer, the conventional buffer material of CdS is not suitable. ZnO is a good candidate because of higher thermal tolerance but the conduction band offset (CBO) of ZnO/CIGS is not appropriate. In this study, the Zn1−xMgxO buffer layers were used to fulfill both the requirements. The superstrate-type solar cells with a soda-lime glass/In2O3:Sn/Zn1−xMgxO/CIGS/Au structure were fabricated with different band gap energies of the Zn1−xMgxO layer. The CIGS layers [Ga/(In + Ga)∼0.25] were deposited by co-evaporation method. The substrate temperature during the CIGS deposition of 450 °C did not cause the intermixing of the Zn1−xMgxO and CIGS layers. The conversion efficiency of the cell with Zn1−xMgxO was higher than that with ZnO due to the improvement of open-circuit voltage and shunt resistance. The results well corresponded to the behavior of the adjustment of CBO, demonstrating that the usefulness of the Zn1−xMgxO layer for the CBO control in the superstrate-type CIGS solar cells. 相似文献
6.
Dynamic scaling and optical properties of Zn(S,O, OH) thin film grown by chemical bath deposition
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The scaling behavior and optical properties of Zn(S, O and OH) thin films deposited on soda-lime glass substrates by chemical bath deposition method were studied by combined roughness measurements, scanning electron microscopy and optical properties measurement. From the scaling behaviour, the value of growth scaling exponent β , 0.38±0.06, was determined. This value indicated that the Zn(S, O, OH) film growth in the heterogeneous process was influenced by the surface diffusion and shadowing effect. Results of the optical properties measurements disclosed that the transmittance of the film was in the region of 70%-88% and the optical properties of the film grown for 40 min were better than those grown under other conditions. The energy band gap of the film deposited with 40 min was around 3.63 eV. 相似文献
7.
Sputtered Zn(O,S)/In2O3:H window layers for enhanced blue response of chalcopyrite solar cells
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Alexander Steigert Iver Lauermann Thomas Niesen Thomas Dalibor Jörg Palm Stefan Körner Harald Scherg‐Kurmes Ruslan Muydinov Bernd Szyszka Reiner Klenk 《固体物理学:研究快报》2015,9(11):627-630
A combination of undoped ZnO and ZnO:Al is the most commonly used window layer stack for chalcopyrite solar cells. The high carrier density and thickness required to achieve a sufficiently low sheet resistance lead to optical absorption and cause losses in photocurrent, in particular in monolithically interconnected modules. Additionally, the band gap of the CdS buffer layer and of un‐doped ZnO limit the blue response. These losses could be avoided by using a transparent conductive oxide with high carrier mobility and wider band gap in combination with a buffer layer which also has a wide band gap. We propose a stack of Zn(O,S) and In2O3:H and report on our first results concerning its implementation. This stack is Cd‐free, highly transparent over a wide range, and can be deposited completely by sputtering which is an industrially proven dry process. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
8.
Y.C. Lin J.H. KeW.T. Yen S.C. LiangC.H. Wu C.T. Chiang 《Applied Surface Science》2011,257(9):4278-4284
In this study, Cu(In,Ga)(Se,S)2 (CIGSS) thin films were deposited onto a bi-layer Mo coated soda-lime glass by co-sputtering a chalcopyrite Cu(In,Ga)Se2 (CIGS) quaternary alloy target and an In2S3 binary target. A one-stage annealing process was performed to form CIGSS chalcopyrite phase without post-selenization. Experimental results show that CIGSS films were prepared by the proposed co-sputter process via CIGS (70 W by radio frequency) and In2S3 (30 W by direct current) with a substrate temperature of 373 K, working pressure of 0.67 Pa, and one-stage annealing at 798 K for 30 min. The stoichiometry ratios of the CIGSS film were Cu/(In + Ga) = 0.92, Ga/(In + Ga) = 0.26, and Se/(S) = 0.49 that approached device-quality stoichiometry ratio (Cu/(In + Ga) < 0.95, Ga/(In + Ga) < 0.3, and (Se/S) ≈ 0.5). The resistivity of the sample was 14.8 Ω cm, with a carrier concentration of 3.4 × 1017 cm−3 and mobility of 1.2 cm2 V−1 s−1. The resulting film exhibited p-type conductivity with a double graded band-gap structure. 相似文献
9.
Zn/Zn5(OH)8Cl2·H2O flower-like nanostructures was electrodeposited on the coated Zn with poly (N-methyl pyrrole) in 0.1 M Zn (NO3)2 and 0.1 M KCl solution. The morphology and the structure of the Zn/Zn5(OH)8Cl2·H2O were characterized by Field Emission Scanning Electron Microscopy (FESEM), Fourier transform infrared (FT-IR) spectroscopy and X-ray diffraction analysis (XRD). The FT-IR results showed special peaks at 908 and 728 cm−1 related to Zn5(OH)8Cl2·H2O. The FESEM results indicated that Zn/Zn5(OH)8Cl2·H2O consists of a flower-like nanostructure and these flower-shaped structures contain many shaped nanopetals with the thickness of 27.8 nm. The XRD result confirmed that the major phase of electrodeposited product in 0.1 M KCl as supporting electrolyte was Zn5(OH)8Cl2·H2O. The ability of PMPy to create a thin film and the existence of several pores in its matrix act as a mold for the growth of Zn/Zn5(OH)8Cl2·H2O flower-like nanostructure. The trapping of Cl− and OH− within pores can be considered as the reason for the formation of flowerlike Zn/Zn5(OH)8Cl2·H2O nanostructures in 0.1 M KCl. 相似文献
10.
Young-Lae Kim Heon-Young Lee Serk-Won Jang Seung-Joo Lee Hong-Koo Baik Young-Soo Yoon Young-Shin Park Sung-Man Lee 《Solid State Ionics》2003,160(3-4):235-240
Thin film Ni3Sn2 anodes were deposited on a Cu substrate by e-beam evaporator at room temperature. The deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). They were tested as anodes for thin film rechargeable lithium batteries. These film electrodes exhibited an excellent cycle performance over 500 cycles. Ni3Sn2 films remained without undergoing any crystallographic phase change during cycling. 相似文献
11.
Superhydrophobic functionalized cupric hydroxide (Cu(OH)2) nanotube arrays were prepared on copper foils via a facile alkali assistant surface oxidation technique. Thus nanotube arrays of Cu(OH)2 were directly fabricated on the surface of copper foil by immersing in an aqueous solution of NaOH and (NH4)2S2O8. The wettability of the surface was changed from surperhydrophilicity to superhydrophobicity by chemical modification with 1H,1H,2H,2H-perfluorodecyltriethoxysilane (FAS). The morphologies, microstructures, crystal structure, chemical compositions and states, and hydrophobicity of the films on the copper foil substrates were analyzed by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and water contact angle measurement. It was found that the rough structure of the surface helped to magnify the wettability. The static contact angle (CA) for water is larger than 160° and the contact angle hysteresis (CAH) is lower than 5° on the modified surface. The high roughness of the nanotube arrays along with the generated C-F chains by chemical modification contributed to the improved superhydrophobicity. The present research is expected to be significant in providing a new strategy for the preparation of novel multifunctional materials with potential industrial applications on copper substrates. 相似文献
12.
C. Sudakar P. Kharel R. Suryanarayanan J.S. Thakur V.M. Naik R. Naik G. Lawes 《Journal of magnetism and magnetic materials》2008
Thin films of pure TiO2 have been prepared using both spin-coating and sputter-deposition techniques on sapphire and quartz substrates. The structural characteristics of the films have been investigated in detail using Raman spectroscopy and high-resolution transmission electron microscopy (HRTEM). When annealed in vacuum, all films demonstrate room temperature ferromagnetism, while the air-annealed samples show much smaller, often negligible, magnetic moments. The magnetization of the vacuum-annealed sputtered samples depends on film thickness, with the volume magnetization decreasing monotonically with increasing thickness. Furthermore, the magnetization per unit area also decreases slightly with increasing film thickness. These results suggest that ferromagnetism in the vacuum-annealed TiO2 films is mediated by surface defects or interfacial effects, but does not arise from stoichiometric crystalline TiO2. 相似文献
13.
SnO2 thin film was grown on Si substrate using the low pressure chemical vapor deposition (LPCVD) method. The SnO2 thin film was grown in the direction of (110) as deposition time increased. The atomic ratio of O decreased by 62.4, 57.6, and 45.6%, and the thickness of the thin film increased to 0.2, 0.3, and 0.7 ? as the deposition time increased to 10, 20, and 30 min, respectively. The interface of the thin film was examined using high-resolution transmission electron microscope (HRTEM) and energy dispersive spectroscopy (EDS) analysis. The SiO2 layer was observed at between the SnO2 thin film and the Si substrate. This layer decreased in thickness as the deposition time increased, which indicates that the deposition time affected the interface of the thin film. 相似文献
14.
Pentanary Cu(In,Ga)(Se,S)2 (CIGSS) thin films were deposited on soda-lime glass substrate by co-sputtering quaternary alloy, and In2S3 targets. In this study, we investigated the influence of post-annealing temperature on structural, compositional, electrical, and optical properties of CIGSS films. Our experimental results show that the CIGS quaternary target had chalcopyrite characteristics. All CIGSS films annealed above 733 K exhibited a polycrystalline tetragonal chalcopyrite structure, with (1 1 2) preferred orientation. The carrier concentration and resistivity of the resultant CIGSS layer annealed above 763 K was 4.86×1016 cm−3 and 32 Ω cm, respectively, and the optical band-gap of the CIGSS absorber layer was 1.18 eV. Raman spectral analysis demonstrated the existence of many different phases, including CuInSe2, CuGaSe2, and CuInS2. This may be because the vibration frequencies of In-Se, In-S bonds are similar to the Ga-Se and Ga-S bonds, causing their absorption bands overlap. 相似文献
15.
Formation of cadmium hydroxide at room temperature onto glass substrates from an aqueous alkaline cadmium nitrate solution using a simple soft chemical method and its conversion to cadmium oxide (CdO) by thermal annealing treatment has been studied in this paper. The as-deposited film was given thermal annealing treatment in oxygen atmosphere at 450 °C for 2 h for conversion into cadmium oxide. The structural, surface morphological and optical studies were performed for as-deposited and the annealed films. The structural analyses revealed that as-deposited films consists of mixture of Cd(OH)2 and CdO, while annealed films exhibited crystalline CdO. From surface morphological studies, conversion of clusters to grains after annealing was observed. The band gap energy was changed from 3.21 to 2.58 eV after annealing treatment. The determination of elementals on surface composition of the core-shell nanoparticles of annealed films was carried out using X-ray photoelectron spectroscopy (XPS). 相似文献
16.
Novel Pd/InVO4-TiO2 thin films with visible light photocatalytic activity were synthesized from the Pd and InVO2 co-doped TiO2 sol via sol-gel method. The photocatalytic activities of Pd/InVO4-TiO2 thin films were investigated based on the oxidative decomposition of methyl orange in aqueous solution. The as-prepared samples were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis absorption spectroscopy (UV-vis). The results indicate that the Pd/InVO4-TiO2 thin films are compact, uniform and consist of sphere nanoparticles with diameters about 80-100 nm. The UV-vis spectra show that the Pd/InVO4-TiO2 thin films extend the light absorption spectrum toward the visible region. XPS results reveal that doped Pd exist in the form of metallic palladium. The photocatalytic experiments demonstrate that Pd doping can effectively enhance the photocatalytic activities of InVO4-TiO2 thin films in decomposition of aqueous methyl orange under visible light irradiation. It has been confirmed that Pd/InVO4-TiO2 thin films could be excited by visible light (E < 3.2 eV) due to the existence of the Pd and InVO4 doped in the films. 相似文献
17.
TiO2 films were prepared on a silicon or soda-glass substrate using a sol suspension. The TiO2 film on the silicon substrate was composed of pure anatase phase and showed almost no contaminations. In contrast, the TiO2 film on the soda-glass substrate was composed of anatase and brookite phases. The diffusion of Na into the TiO2 film on the soda-glass substrate was observed by XPS, and Na was concentrated on the surface of the film. The yield of the brookite phase increased with decreasing distance from the surface of the film on the soda-glass substrate. Na promoted the formation of the brookite phase, although the preparative procedure was used for anatase synthesis. 相似文献
18.
Titanium dioxide thin films have been deposited by reactive magnetron sputtering on glass substrate and subsequently irradiated by UV radiation using a KrF excimer laser. In this work, we have study the influence of the laser fluence (F) ranging between 0.05 and 0.40 mJ/cm2 on the constitution and microstructure of the deposited films. Irradiated thin films are characterized by profilometry, scanning electron microscopy and X-ray diffraction. As deposited films are amorphous, while irradiated films present an anatase structure. The crystallinity of the films strongly varies as a function of F with maximum for F = 0.125 J/cm2. In addition to the modification of their constitution, the irradiated areas present a strongly modified microstructure with appearance of nanoscale features. The physico-chemical mechanisms of these structural modifications are discussed based on the theory of nucleation. 相似文献
19.
Cr doped TiO2-SiO2 nanostructure thin film on glass substrates was prepared by a sol-gel dip coating process. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were used to characterize the structural and chemical properties of the films. A UV-vis spectrophotometer was used to measure the transmittance spectra of the thin film. The hydrophilicity of the thin film during irradiation and storage in a dark place was measured by a contact angle analyzer. The results indicated that Cr doping has a significant effect on the transmittance and super-hydrophilicity of TiO2-SiO2 thin film. 相似文献
20.
Yunsheng Zhang Aili Wang Min Ren Zhuomin Gu Yumin Liu Yutang Shen Longbao Yu Tingshun Jiang 《Applied Surface Science》2010,257(4):1351-1360
Binary Al2O3/SiO2-coated rutile TiO2 composites were prepared by a liquid-phase deposition method starting from Na2SiO3·9H2O and NaAlO2. The chemical structure and morphology of binary Al2O3/SiO2 coating layers were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, TG-DSC, Zeta potential, powder X-ray diffraction, and transmission electron microscopy techniques. Binary Al2O3/SiO2 coating layers both in amorphous phase were formed at TiO2 surfaces. The silica coating layers were anchored at TiO2 surfaces via Si-O-Ti bonds and the alumina coating layers were probably anchored at the SiO2-coated TiO2 surfaces via Al-O-Si bonds. The formation of continuous and dense binary Al2O3/SiO2 coating layers depended on the pH value of reaction solution and the alumina loading. The binary Al2O3/SiO2-coated TiO2 composites had a high dispersibility in water. The whiteness and brightness of the binary Al2O3/SiO2-coated TiO2 composites were higher than those of the naked rutile TiO2 and the SiO2-coated TiO2 samples. The relative light scattering index was found to depend on the composition of coating layers. 相似文献