Isothermal reduction kinetics of nickel oxide using hydrogen: Conventional and Weibull kinetic analysis

The powder sample of nickel oxide was synthesized by sol-gel procedure. The isothermal reduction of nickel oxide using hydrogen was investigated by thermogravimetric analysis at five operating temperatures: 245, 255, 265, 275 and 300 °C. The kinetic triplet (E_a, A and f(α)) was determined using conventional and Weibull kinetic analysis. Both the kinetically procedures show that the reduction process considered can be explained with a two-step kinetic model. It is established that at lower temperatures (245 °C?T?255 °C), the reduction process considered is governed by two-parameter Šesták-Berggren autocatalytic model (first step) and at higher temperatures (T?265 °C), the reduction process is governed by Fn reaction model with different values of parameter n (second step). In this paper, the complex manner of dependence of the Weibull shape parameter (β) on temperature is established. With alterations of Weibull shape parameter from lower temperatures (β>1) to higher temperatures (β<1), it was concluded that isothermal reduction process of NiO using hydrogen can be described by a multistep reaction mechanism. These results are confirmed by the evaluated density distribution functions (ddf) of apparent activation energies (E_a), which show variations in basic characteristics at lower and higher operating temperature regions. Also, in this paper, it was shown that the shape parameter (β) of Weibull distribution function can represent the behaviour index, which indicates the kinetic pattern of the mechanism controlling the process studied.     

A kinetic study of the thermal decomposition process of potassium metabisulfite: Estimation of distributed reactivity model

The thermal decomposition kinetics of potassium metabisulfite was studied by thermogravimetric (TG) and differential thermogravimetric (DTG) techniques using non-isothermal experiments. The apparent activation energy (E_a) is determined using the differential (Friedman) isoconversional method. The results of the Friedman's isoconversional analysis of the TG data suggests that the investigated decomposition process follows a single-step reaction and the observed apparent activation energy was determined as 122.4±2.1 kJ mol⁻¹. A kinetic rate equation was derived for the decomposition process of potassium metabisulfite with contracting area model, f(α)=2(1−α)^1/2, which is established using the Malek's kinetic procedure. The value of pre-exponential factor (A) is also evaluated and was found to be A=1.37×10¹² min⁻¹. By applying the Miura's procedure the distributed reactivity model (DRM) for investigated decomposition process was established. From the dependence α versus E_a, the experimental distribution curve of apparent activation energies, f(E_a), was estimated. By applying the non-linear least-squares analysis, it was found that the Gaussian distribution model (with distribution parameters E₀=121.3 kJ mol⁻¹ and σ=1.5 kJ mol⁻¹) represents the best reactivity model for describing the investigated process. Using the Miura's method, the A values were estimated at five different heating rates and the average A values are plotted against E_a. The linear relationship between the A and E_a values was established (compensation effect). Also, it was concluded that the E_a values calculated by the Friedman's method and estimated distribution curve, f(E_a), are correct even in the case when the investigated decomposition process occurs through the single-step reaction mechanism.     

Silicon carbonitride by remote microwave plasma CVD from organosilicon precursor: Growth mechanism and structure of resulting Si:C:N films

The remote microwave hydrogen plasma chemical vapor deposition (RP-CVD) from bis(dimethylamino)methylsilane precursor was used for the synthesis of silicon carbonitride (Si:C:N) films. The effect of thermal activation on the RP-CVD process was examined by determining the mass- and the thickness-based film growth rate and film growth yield, at different substrate temperature (T_S). It was found that the mechanism of the process depends on T_S and for low substrate temperature regime, 30 °C ≤ T_S ≤ 100 °C, RP-CVD is limited by desorption of film-forming precursors, whereas for high substrate temperature regime, 100 °C < T_S ≤ 400 °C, RP-CVD is a non-thermally activated and mass-transport limited process. The Si:C:N films were characterized by X-ray photoelectron and Fourier transform infrared spectroscopies, as well as by atomic force microscopy. The increase of T_S enhances crosslinking in the film via the formation of nitridic Si-N and carbidic Si-C bonds. On the basis of the structural data a hypothetical crsosslinking reactions contributing to silicon carbonitride network formation have been proposed.     

Crystallization of hydrogenated amorphous silicon carbon films with laser and thermal annealing

The crystallization of silicon rich hydrogenated amorphous silicon carbon films prepared by Plasma Enhanced Chemical Vapor Deposition technique has been induced by excimer laser annealing as well as thermal annealing. The excimer laser energy density (E_d) and the annealing temperature were varied from 123 to 242 mJ/cm² and from 250 to 1200 °C respectively. The effects of the two crystallization processes on the structural properties and bonding configurations of the films have been studied. The main results are that for the laser annealed samples, cubic SiC crystallites are formed for E_d ≥ 188 mJ/cm², while for the thermal annealed samples, micro-crystallites SiC and polycrystalline hexagonal SiC are observed for the annealing temperature of 800 and 1200 °C respectively. The crystallinity degree has been found to improve with the increase in the laser energy density as well as with the increase in the annealing temperature.     

Intermittent temperature-programmed desorption study of perovskites used for catalytic purposes

A differential desorption technique, called intermittent temperature-programmed desorption (ITPD), was used to give new insights into the properties of La_1−xSr_xCo_0.8Fe_0.2O₃ perovskites as a contribution to improve their performances with respect to various important application fields such as catalysis, electrocatalysis and solid oxide fuel cells (SOFC). Both ITPD and interrupted TPD (carried out at different heating rates) evidenced two distinct oxygen adsorbed states, desorbing at temperatures lower than 400 °C, corresponding to less than 5% of a compact monolayer of oxide ions. The first one, for low desorption temperatures (lower than 290 °C) exhibits a heat of adsorption (ΔH) distribution from 101 to 121 kJ mol⁻¹. The second one, for higher desorption temperatures (between 290 and 400 °C) corresponds to ΔH = 146 ± 4 kJ mol⁻¹. Additionally, for temperatures higher than 400 °C, we observed a continuous desorption of oxygen species, probably originating from the sub-surface or semi-bulk, with an associated activation energy of desorption ≥175 kJ mol⁻¹.     

Structural characterization of Ni and Ni/Ti ohmic contact on n-type 4H-SiC

In this study, we report on the structural characterization of Ni layer and Ni/Ti bilayer contacts on n-type 4H-SiC. The resulting Ni-silicides and the redistribution of carbon, after annealing at 950 °C, in the Ni/SiC and the Ni/Ti/SiC contacts are particularly studied by Rutherford Backscattering Spectrometry (RBS) at E_α = 3.2 MeV, nuclear reaction analysis (NRA) at E_d = 1 MeV, scanning electron microscopy (SEM) and Energy Dispersive X-ray Spectrometry (EDS) techniques.     

Thermoluminescence kinetic study of binary lead-silicate glasses

This paper describes a detailed experimental study of the thermoluminescence (TL) properties of four binary lead-silicate glasses, with PbO concentrations ranging from 32% to 62% in mole percent. The TL glow peaks between room temperature and 300 °C were analyzed using a systematic thermal cleaning technique. The T_max-T_stop and E-T_stop methods of analysis were used to identify the number of peaks under the glow curves, and to obtain the activation energy E for each TL trap. A computerized glow curve fitting analysis is used to fit the experimental data to four first-order peaks with maxima at temperatures of 54, 80, 110 and 210 °C, as measured with a heating rate of 2 °C/s. The kinetic parameters of the glow-peak at 210 °C were confirmed by using phosphorescence decay methods of analysis. The TL traps associated with the low-temperature TL peak at 54 °C are found to depend strongly on the PbO concentration of the samples, while the higher-temperature TL peaks show a behavior independent of the PbO concentration. The activation energy E and frequency factor s of the low-temperature TL trap associated with the peak at 54 °C are consistent with a trap involving a delocalized transition through the conduction band. However, the activation energies and frequency factors for the higher-temperature TL traps are consistent with traps involving localized transitions via an excited state below the conduction band. The data suggest that these higher-temperature TL traps are associated with the common silicate matrix in these binary silicate glasses.     

Thermal oxidation temperature dependence of 4H-SiC MOS interface

The thermal oxidation temperature dependence of 4H-silicon carbide (SiC) is systematically investigated using X-ray photoelectron spectroscopy (XPS) and capacitance-voltage (C-V) measurements. When SiC is thermally oxidized, silicon oxycarbides (SiC_xO_y) are first grown and then silicon dioxide (SiO₂) is grown. It is identified by XPS that the SiO₂ films fall into two categories, called SiC-oxidized SiO₂ and Si-oxidized SiO₂ in this paper. The products depend on thermal oxidation temperature. The critical temperature is between 1200 and 1300 °C. The interface trap density (D_it) of the sample possessing Si-oxidized SiO₂, at thermal oxidation temperature of 1300 °C, is lower than SiC-oxidized SiO₂ at and below 1200 °C, suggesting that a decrease of the C component in SiO₂ film and SiO₂/SiC interface by higher oxidation temperature improves the metal-oxide-semiconductor (MOS) characteristics.     

Optical properties of ITO/TiO2 single and double layer thin films deposited by RPLAD

Indium tin oxide (ITO) and titanium dioxide (TiO₂) single layer and double layer ITO/TiO₂ films were prepared using reactive pulsed laser ablation deposition (RPLAD) with an ArF excimer laser for applications in dye-sensitized solar cells (DSSCs). The films were deposited on SiO₂ substrates either at room temperatures (RT) or heated to 200-400 °C. Under optimized conditions, transmission of ITO films in the visible (vis) range was above 89% for films produced at RT and 93% for the ones deposited at higher temperatures. Increasing the substrate temperature from RT to 400 °C enhances the transmission of TiO₂ films in the vis-NIR from about 70% to 92%. High transmission (≈90%) was observed for the double layer ITO/TiO₂ with a transmission cut-off above 900 nm. From the transmission data, the energies gaps (E_g), as well as the refractive indexes (n) for the films were estimated. n ≈ 2.03 and 2.04, respectively for ITO films and TiO₂ film deposited at 400 °C in the visible region. Post-annealing of the TiO₂ films for 3 h at 300 and 500 °C was performed to enhance n. The refractive index of the TiO₂ films increases with the post-annealing temperature. The direct band gap is 3.6, 3.74 and 3.82 eV for ITO films deposited at RT, 200, and 400 °C, respectively. The TiO₂ films present a direct band gap of 3.51 and 3.37 eV for as deposited TiO₂ films and when annealed at 400 °C, respectively. There is a shift of about 0.1 eV between ITO and ITO/TiO₂ films deposited at 200 °C. The shift decreases by half when the TiO₂ film was deposited at 400 °C. Post-annealing was also performed on double layer ITO/TiO₂.     

Optical properties of single-phase β-FeSi2 films fabricated by electron beam evaporation

Single-phase semiconducting iron disilicide (β-FeSi₂) films on silicon substrate were fabricated by electron beam evaporation (EBE) technique. For preventing the oxidation of Fe film, silicon/iron/silicon sandwich structure films with different thickness of silicon and iron were deposited and then annealed at different temperatures. X-ray diffraction (XRD), Raman and Fourier transform infrared spectroscopy (FTIR) measurements were carried out to study the phase distribution and crystal quality of the films. Single-phase β-FeSi₂ with high crystal quality was achieved after annealing at 800 °C for 5 h. An apparent direct bandgap E_g of approximately 0.85-0.88 eV was observed in the β-FeSi₂ films. It is considered that the silicon/iron/silicon sandwich structure is suited for formation of single-phase β-FeSi₂ with high crystal quality.     

Effect of annealing on the properties of N-doped ZnO films deposited by RF magnetron sputtering

N-doped ZnO films were deposited by RF magnetron sputtering in N₂/Ar gas mixture and were post-annealed at different temperatures (T_a) ranging from 400 to 800 °C in O₂ gas at atmospheric pressure. The as-deposited and post-annealed films were characterized by their structural (XRD), compositional (SIMS, XPS), optical (UV-vis-NIR spectrometry), electrical (Hall measurements), and optoelectronic properties (PL spectra). The XRD results authenticate the improvement of crystallinity following post-annealing. The weak intensity of the (0 0 2) reflection obtained for the as-deposited N-doped ZnO films was increased with the increasing T_a to become the preferred orientation at higher T_a (800 °C). The amount of N-concentration and the chemical states of N element in ZnO films were changed with the T_a, especially above 400 °C. The average visible transmittance (400-800 nm) of the as-deposited films (26%) was increased with the increasing T_a to reach a maximum of 75% at 600 °C but then decreased. In the PL spectra, A⁰X emission at 3.321 eV was observed for T_a = 400 °C besides the main D⁰X emission. The intensity of the A⁰X emission was decreased with the increasing T_a whereas D⁰X emission became sharper and more optical emission centers were observed when T_a is increased above 400 °C.     

Calculated influence of work function on SE escape probability and Secondary Electron Emission yield

The influence of changes of the work function, ?, or electron affinity, χ, on the escape probability, A, of Secondary Electrons, SE, is derived from their angular and energy distributions, respectively ∂δ/∂α and ∂δ/∂E_k. Based on the evaluation of the spectral distribution of inner SEs, the present approach quantifies the dominant role of potential barrier on the SE emission and its change with surface treatments or thin film deposits. For instance it is shown that a 1 eV-increase of ? for Au leads to a decrease of A, and then of SE emission yield, δ, of about 50% while a 0.4 eV-increase of χ for potassium chloride induces a decrease of a factor 4 for A and then for the SEE yield δ. These results are summarized by empirical expressions of form A/A° = (?/?°)⁻³ for Au and A/A° =(χ/χ°)^−3/2 for KCl. Applied here to an insulating sample and to a metal, the present approach may be easily transposed to any kind of material of known Fermi energy and work function, metals, or known affinity, semiconducting and insulating samples. The large SEE yield values of inorganic insulators relative to that of metals are explained by larger values of their escape probability A - KCl: A° ∼ 25% for χ° = 0.6 eV; Au: A° ∼ 4% for ?° = 3.5 eV - combined to larger SE attenuation lengths and despite a less SE generation factor. This approach underlines the significant role of A on the large deviations between SEEY data as reported in literature and a strategy combining in situ δ and ? measurements is suggested to partly compensate the corresponding dispersion of experimental results. The present approach may be transposed to other energetic projectiles such as X-rays or ions and some practical consequences related to Scanning Electron Microscopy, mechanisms of contamination and crystalline contrasts, are pointed out.     

Substantially low desorption barriers in recombinative desorption of deuterium from a Si(1 0 0) surface

We have studied desorption kinetics of deuterium molecules from a Si(1 0 0) surface by means of temperature-programmed desorption (TPD) spectra and isothermal desorptions.Three desorption components, denoted as β_1,A,β_1,B, and C, can be distinguished in semi-logarithmic plots of the TPD spectra.Their peak positions and intensities are strongly affected by the surface preparation methods employed, either with or without annealing to control the initial D coverage .Peak C appears at the leading edge of the TPD peak.It accounts for only about 5% of the TPD peak at and it diminishes rapidly with decreasing , vanishing at .In contrast, together the β_1,A and β_1,B peaks account for the whole TPD peak at any less than 1.0 ML. The maximum of the β_1,A peak is nearly constant at around the maximum temperature of the TPD peak.On the other hand, the β_1,B peak appears on the high-temperature side of the TPD peak and it systematically shifts to higher temperatures with decreasing .These results imply that first- and second-order kinetics are operating for the β_1,A and β_1,B desorptions, respectively.Isothermal desorption experiments confirm the above predicted kinetics for a limited region, namely .From the results for the rate curve analysis, the desorption barriers are evaluated to be 1.6 ± 0.1 eV and 1.8 ± 0.1 eV for the β_1,A and β_1,B desorptions, respectively.These values are substantially lower than the widely accepted value of ∼2.5 eV. To reproduce the measured TPD spectra we take the Arrhenius-type rate equation containing the first- and second-order rate terms for the β_1,A and β_1,B desorptions.The TPD spectra measured for can be reasonably fit with the proposed rate equation when the values given above for E_d,A and E_d,B are used. For , however, the TPD curves are not fit with the same values; rather, the best-fit curves require values for E_d,A and E_d,B larger than those given above. Combining the present kinetics results with those obtained by STM along with the studies, the β_1,A and β_1,B peaks may be attributed to desorption along the 2H path, while peak C may be attributed to desorption along the 4H path. The atomistic desorption mechanism as well as the energy relationship between the desorption barrier and isosteric heat of adsorption are discussed.     

High-temperature oxidation resistance and magnetic properties of Si-doped Sm2Co17-type magnets at 500 °C

The high-temperature oxidation resistance and magnetic properties of Si-doped Sm₂Co₁₇-type magnets at 500 °C were systematically investigated. The Sm(Co_0.76, Fe_0.1, Cu_0.1, Zr_0.04)₇Si_x (x=0–0.6) magnets were prepared by the conventional powder metallurgical technique. It is found that the addition of silicon in the Sm₂Co₁₇-type magnet can remarkably improve its oxidation resistance. Moreover, a small amount of silicon addition can also increase its high-temperature intrinsic coercivity. A maximum intrinsic coercivity of 6.7 kOe at 500 °C was obtained for the Sm₂Co₁₇-type magnet with Si content x=0.4, whose high-temperature maximum energy product loss was about 2.5 times smaller than pure Sm₂Co₁₇-type magnet after oxidation at 500 °C for 100 h, indicating the enhanced oxidation resistance. Its corresponding Curie temperature and saturation magnetization are about 723.9 °C and 7.4 kG, respectively.     

Effect of the annealing environment on the optical properties of ZnO/GaAs grown by MOCVD

The optical properties of ZnO grown on (1 0 0) GaAs substrate using metalorganic chemical vapor deposition are investigated by photoluminescence (PL) spectroscopy. Postgrowth annealing in nitrogen and oxygen was performed for different times and temperatures in order to incorporate As from the substrate into the ZnO thin films. The PL spectra of the samples annealed in different ambients reveal that the effect of As diffusion into the ZnO thin films is more pronounced when the annealing is performed in oxygen at 550 °C. The 11 K PL spectra show the appearance of a transition at ∼3.35 eV after annealing in oxygen at 550 °C for 1 h. A further increase in the annealing temperature leads to the disappearance of this line, while for annealing times longer than 2 h at 550 °C, it is no longer prominent. The increase in intensity of this new transition is also accompanied by the enhancement of radiative centers related to structural defects, such as the stacking fault-related transition at 3.31 eV and the Y-line. Temperature dependent PL illustrates the excitonic nature of the new transition at ∼3.35 eV, which is therefore assigned to (A⁰, X) transition, where the acceptor is possibly the 2V_Zn-As_Zn complex, with an activation energy E_A in the range of 160-240 meV. Furthermore, the enhancement of the radiative centers related to structural defects is regarded as evidence that As atoms tend to segregate in the vicinity of structural defects to relieve local strain.     

Evidence for H2 at high pressure in the silicon nanocavities after dipping in HF solution

The immersion in HF solutions of silicon containing nanocavities (produced by the annealing at high temperature, 950 °C, of silicon implanted with helium at high fluence, 2 × 10¹⁶ cm⁻²) results in the injection of hydrogen in an infrared-mute state (most likely H₂) into the nanocavities. The pressure achieved in the cavities is sufficiently high to stabilize the hydrogen coverage of the inner surfaces at temperatures exceeding by 200 °C the one of complete desorption from the outer surface.     

Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, E_C—0.33 eV, E_C—0.36 eV, E_C—0.38 eV and E_C—0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at E_C—0.58 eV. Isochronal annealing of the passivated material between 50 and 300 °C, revealed the emergence of a secondary defect, not previously observed, at E_C—0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 °C, as all the defects originally observed in the reference sample were recovered.     

Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method

Deep level transient spectroscopy (DLTS) is employed to study deep level defects in n-6H-SiC (silicon carbide) epilayers grown by the sublimation method. To study the deep level defects in n-6H-SiC, we used as-grown, nitrogen doped and nitrogen-boron co-doped samples represented as ELS-1, ELS-11 and ELS-131 having net (N_D–N_A) ∼2.0×10¹² cm⁻³, 2×10¹⁶ cm⁻³ and 9×10¹⁵ cm³, respectively. The DLTS measurements performed on ELS-1 and ELS-11 samples revealed three electron trap defects (A, B and C) having activation energies E_c – 0.39 eV, E_c – 0.67 eV and E_c – 0.91 eV, respectively. While DLTS spectra due to sample ELS-131 displayed only A level. This observation indicates that levels B and C in ELS-131 are compensated by boron and/or nitrogen–boron complex. A comparison with the published data revealed A, B and C to be E₁/E₂, Z₁/Z₂ and R levels, respectively.     

Deposition and growth kinetics studies of thin zirconium dioxide films by UVILS-CVD

We report the deposition of thin zirconium dioxide films on Si(1 0 0) by a technique of ultraviolet-assisted injection liquid source chemical vapor deposition (UVILS-CVD) by using ultraviolet with 222 nm radiation. The alkoxide zirconium(IV) tert-butoxide (Zr[OC(CH₃)₃]₄) was used as precursor while nitrous oxide was driven into the reaction chamber as an oxidizing agent. The ZrO₂ films were deposited under various conditions and characterized by ellipsometry, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction and scanning electron microscopy. The growth rate decreased with the increasing of substrate temperatures from 200 to 400 °C. Deposition rate of 20 nm/min was observed at a substrate temperature of 350 °C. There was a liner relation between the thicknesses of the films and deposition times. As a result the thicknesses can be accurately controlled by changing the number of drops of precursor introduced by the injection liquid source. The growth rate increased with the increasing concentrations of the precursor, nevertheless the trend stopped when the concentration exceeded 8.5%. The growth kinetics were also studied and the results were fit to a three-step kinetic model involving a photo chemical reaction, a reversible precursor absorption process and a following irreversible deposition reaction.