微晶硅薄膜沉积过程中的等离子体光学与电学特性研究

采用空间分辨光发射谱和傅里叶变换功率阻抗分析仪研究了衬底偏压和辉光功率对微晶硅薄膜沉积过程中的等离子体光学与电学特性的影响.研究表明：在交流偏压(AC)、悬浮(floating)、负直流加交流(-DC＋AC)偏压下,Hα发射强度空间分布规律相似,平均鞘层长度相等;正直流加交流(＋DC＋AC)偏压和接地(grounded)时Hα发射强度显著增强,并存在双峰(double layers)现象.增大功率,Hα发射强度也随着增大,并在17W与22W之间产生跳变.电学测试发现功率增大,等离子体电阻降低,电抗降低,电 关键词： 等离子体 光发射谱 衬底偏压 辉光功率     

氢等离子体处理对ZnO光电性质的影响

借助于霍尔效应、拉曼散射、光致发光及电致发光测试技术,研究了氢等离子体处理以及随后的高温退火过程对ZnO薄膜及ZnO纳米棒光学及电学性质的影响.实验结果表明:氢在ZnO薄膜中不仅充当浅施主,而且还可以钝化晶界处缺陷相关的非辐射复合中心,从而使得载流子浓度及迁移率增大,近带边紫外发光增强.然而,钝化晶界的氢热稳定性较差,500℃时已经完全扩散出ZnO薄膜,因此,500℃退火后载流子迁移率及近带边紫外发光强度迅速减弱.     

Density functional theory analysis of electronic structure and optical properties of La-doped Cd_2SnO_4 transparent conducting oxide

The electronic structural, effective masses of carriers, and optical properties of pure and La-doped Cd_2SnO_4 are calculated by using the first-principles method based on the density functional theory. Using the GGA+U method, we show that Cd_2SnO_4 is a direct band-gap semiconductor with a band gap of 2.216 eV, the band gap decreases to 2.02 e V and the Fermi energy level moves to the conduction band after La doping. The density of states of Cd_2SnO_4 shows that the bottom of the conduction band is composed of Cd 5 s, Sn 5 s, and Sn 5 p orbits, the top of the valence band is composed of Cd 4d and O 2p, and the La 5 d orbital is hybridized with the O 2 p orbital, which plays a key role at the conduction band bottom after La doping. The effective masses at the conduction band bottom of pure and La-doped Cd_2SnO_4 are 0.18 m0 and 0.092 m_0, respectively, which indicates that the electrical conductivity of Cd_2SnO_4 after La doping is improved. The calculated optical properties show that the optical transmittance of La-doped Cd_2SnO_4 is 92%, the optical absorption edge is slightly blue shifted, and the optical band gap is increased to 3.263 eV. All the results indicate that the conductivity and optical transmittance of Cd_2SnO_4 can be improved by doping La.     

热处理对制备辉光放电聚合物薄膜结构及光学性能的影响

利用低压等离子体聚合技术制备了约5 μm的辉光放电聚合物薄膜, 将所制备的样品放入热处理炉中通入氩气保护, 分别在280 ℃, 300 ℃, 320 ℃, 340 ℃进行热处理. 对热处理后的样品采用傅里叶变换红外吸收光谱(FT-IR)分析了不同热处理温度对薄膜结构的影响. 对CH振动区进行了分峰高斯拟合, 定量的分析了个官能团的变化. 利用紫外可见光谱仪分析了热处理前后薄膜在紫外–可见光区域内光学透过率及光学带隙的变化. 结果表明: 随着热处理温度的升高,薄膜中H含量减少, 薄膜中甲基相对含量减少, 而双键、芳香环结构相对含量增加, 在600 nm以后的可见光区, 薄膜的透过率减小. 薄膜光透过率的截止波长红移, 光学带隙减小. 关键词： 热处理 薄膜结构 等离子体聚合 光学性能     

Plasma-aided hydrogenation and Al-doping: Increasing the conductivity and optical transparency of ZnO transparent conducting oxide

Plasma-assisted magnetron sputtering with varying ambient conditions has been utilised to deposit Al-doped ZnO (AZO) transparent conductive thin films directly onto a glass substrate at a low substrate temperature of 400 °C. The effects of hydrogen addition on electrical, optical and structural properties of the deposited AZO films have been investigated using X-ray diffractometry (XRD), scanning electron microscopy (SEM), Hall effect measurements and UV-vis optical transmission spectroscopy. The results indicate that hydrogen addition has a remarkable effect on the film transparency and conductivity with the greatest effects observed with a hydrogen flux of approximately 3 sccm. It has been demonstrated that the conductivity and the average transmittance in the visible range can increase simultaneously contrary to the effects observed by other authors. In addition, hydrogen incorporation further leads to the absorption edge shifting to a shorter wavelength due to the Burstein-Moss effect. These results are of particular relevance to the development of the next generation of optoelectronic and photovoltaic devices based on highly transparent conducting oxides with controllable electronic and optical properties.     

Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact

Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al_(0.45)Ga_(0.55)N,which aimed at the solar-blind wavelength.After fluorine plasma treatment and before depositing the Ni/Au Schottky,the samples were thermal annealed in the N_2 gas at 400 ℃.The reverse leakage current density of Al_(0.45)Ga_(0.55)N Schottky diode was reduced by 2 orders of magnitude at-10 V.The reverse leakage current density was reduced by 3 orders of magnitude after thermal annealing.Further capacitance-frequency analysis revealed that the fluorine-based plasma treatment reduces the surface states of AlGaN by one order of magnitude at different surface state energies.The capacitance-frequency analysis also proved that the concentration of carriers in AlGaN top is reduced through fluorine plasma treatment.     

Effects of the passivation layer deposition temperature on the electrical and optical properties of GaN-based light-emitting diodes

In this paper, silicon oxynitride is deposited through plasma-enhanced chemical vapor deposition (PECVD) to serve as an antireflection passivation layer. We have studied the effects of the deposition temperature (from 100 to 300 °C) on the electrical and optical performances of GaN-LEDs. It is found that the light output of GaN-LEDs improves greatly after the deposition of SiON antireflection passivation layer at 200 °C and is better than that of GaN-LEDs whose layers are deposited at 100 and 300 °C. The electrical properties of GaN-LED do not degrade at 100 and 200 °C, but degrade significantly at 300 °C.     

GAP-43 mRNA detection by in situ hybridization, direct and indirect in situ RT-PCR in hippocampal and cerebellar tissue sections of adult rat brain

The growth-associated protein GAP-43 is a presynaptic membrane phosphoprotein that is expressed at high levels during development and axonal growth. To evaluate the cellular distribution of GAP-43 mRNA in the hippocampus and cerebellum of adult rats we applied in situ hybridization (ISH) as well as direct and indirect in situ RT-PCR using biotin as a reporter molecule. ISH resulted in a positive signal in most cerebellar granular cells and in 30% of hippocampal CA3 neurons. Direct in situ RT-PCR yielded cells with strong signals in every region investigated, with elevated background levels most likely related to incorporation of labeled nucleotides into non-specific amplicons through internal priming and DNA repair activity. Indirect in situ RT-PCR turned out to be the best approach for detecting GAP-43 mRNA positive cells. Cerebellar cells exhibiting a positive signal for GAP-43 mRNA were of the granular cell type (98%). Hippocampal neurons with a positive reaction for GAP-43 mRNA included all the neuron groups analyzed, namely CA1 (99%) and CA3 pyramidal cells (94%) and dentate gyrus granule cells (92%). Dentate gyrus granule cells have not tested positive for GAP-43 mRNA detection by molecular morphology analysis. These data show that in normal rats GAP-43 mRNA is present in different cell populations of hippocampal formation, supporting the role of this protein in the ongoing processes of synaptic plasticity.     

Scattering mechanisms of charge carriers in transparent conducting oxide films

Scattering mechanisms of charge carriers in Transparent Conducting Oxide (TCO) films have been analyzed theoretically. For the degenerate polycrystalline TCO films with relatively large crystallite sizes and high carrier concentrations (higher than 5 × 10¹⁸ cm^–3), the depletion layers between crystallites are very thin compared to the crystallite sizes, and the grain boundary scattering on electrical carriers makes a small contribution to limit the mobility of the films. Instead of thermionic emission current, a tunneling current dominates the electron transport over grain boundaries. The Petritz model which is based on thermionic emission and extensively quoted in literature should not be applicable. The main scattering mechanisms for the TCO films are ionized impurity scattering in the low-temperature range and lattice vibration scattering in the high-temperature range. The ionized impurity scattering mobility is independent of temperature and the mobility due to thermal lattice vibration scattering is inversely proportional to the temperature. The results obtained from Hall measurements on our ZnO, ITO, SnO₂ and SnO₂:F films prepared with various methods supports the analysis.     

improvement of electrical properties of Cu/SiCOH low-k film integrated system by O2 plasma treatment

This paper investigates the effect of O2 plasma treatment on the electric property of Cu/SiCOH low dielectric constant （low-k） film integrated structure. The results show that the leakage current of Cu/SiCOH low-k integrated structure can be reduced obviously at the expense of a slight increase in dielectric constant k of SiCOH films. Bythe Fourier transform infrared （FTIR） analysis on the bonding configurations of SiCOH films treated by O2 plasmar it is found that the decrease of leakage current is related to the increase of Si-O cages originating from the linkage of Si dangling bonds through O, which makes the open pores sealed and reduces the diffusion of Cu to pores.     

Size effect on nanomechanical properties of ZnO cones using in situ transmission electron microscopy

Nanoscale fracture and strain-induced structure variation of ZnO nanocones are determined using in situ transmission electron microscopy compression experiments. For the single-crystalline nanocones with diameters of 100–300 nm, the Young's modulus is in the range of 7.7–48 GPa and the ultimate tensile strength is in the range of 2.4–4.3%. The Young's modulus and tensile strength increase with decreasing diameter. Here, we report the nanogenerator of ZnO nanocones can be used mechanical energy to output 90 nW/mm².     

Structural, electrical, and optical properties of ZnInO alloy thin films

Indium zinc oxide (IZO) thin films with different percentages of In content (In/[In+Zn]) are synthesized on glass substrates by magnetron sputtering, and the structural, electrical and optical properties of IZO thin films deposited at different In₂O₃ target powers are investigated. IZO thin films grown at different In₂O₃ target sputtering powers show evident morphological variation and different grain sizes. As the In₂O₃ sputtering power rises, the grain size becomes larger and electrical mobility increases. The film grown with an In₂O₃ target power of 100 W displays the highest electrical mobility of 13.5 cm·V^-1·s^-1 and the lowest resistivity of 2.4 × 10^-3 Ω·cm. The average optical transmittance of the IZO thin film in the visible region reaches 80% and the band gap broadens with the increase of In₂O₃ target power, which is attributed to the increase in carrier concentration and is in accordance with Burstein-Moss shift theory.     

Effects of nitrogen addition on methane-based ECR plasma etching of gallium nitride

The effects of nitrogen addition on methane-based ECR plasma etching of GaN were studied. The etch rate 30 nm/min and r.m.s. roughness 2.6 nm were obtained when the GaN sample was etched by a methane-based gas mixture without N₂. The addition of N₂ gas resulted in a decrease of etch rate and a smoother etched surface. The r.m.s. roughness became less than 0.4 nm even only 1.5 sccm N₂ gas was added to the mixture. In situ XPS measurements showed that, without N₂, heavy N-depletion took place on the etched surface, resulting in appearance of Ga metal on the surface. In contrast, the loss of N was compensated when the N₂ gas was added, and the etched surface approached the stoichiometric one with the increase of N₂ gas flow. This suppression of preferential loss of N was considered to be the main reason that improved the etched surface morphology.     

超高真空俄歇电子能谱原位加热和GaN热效应研究

建立一套基于超高真空俄歇电子能谱的原位加热系统,对GaN薄膜进行热效应研究．随着温度的增加,Ga LMM和Ga MVV的动能减小．利用第一性原理计算,获得理论的GaMVV俄歇谱.加热过程由于晶格热膨胀以及表面原子再构引起价电子态密度发生变化,从而导致价带俄歇谱负移．     

衬底对原位氧化制备的ZnO薄膜结构和光学性质的影响

 采用射频反应溅射法在不同衬底上制备Zn₃N₂薄膜,然后对其原位氧化制备ZnO薄膜。利用X射线衍射分析(XRD)、扫描电子显微镜(SEM)和光致发光谱(PL)等表征技术研究了不同衬底对ZnO薄膜的结晶特性和发光性能的影响。XRD研究结果显示:Zn₃N₂薄膜在500 ℃原位氧化3 h后完全转变为ZnO薄膜,在玻璃和熔融石英衬底上制备的多晶ZnO薄膜无择优取向,而单晶硅（100）衬底上的多晶ZnO薄膜具有较好的沿（002）方向的择优取向。PL测试结果显示:硅和熔融石英衬底上的多晶ZnO薄膜发光性能良好,激子复合产生的紫外发光峰很强,且半高宽较窄,而来自于深能级发射的绿色发光峰很弱;而玻璃衬底上的多晶ZnO薄膜发光性能较差。     

Effect of UV irradiation on the structural,optical and electrical properties of platinum

Investigations are performed on thermal, optical and electrical response of UV laser-irradiated platinum (Pt). 4N pure, annealed and fine polished samples are exposed to the KrF Excimer laser (248 nm, 20 ns, 50 mJ) under vacuum ～10^?6 torr at different laser fluences (0.5–2.5 J/cm²). Space-resolved plasma plume dynamics is studied by analyzing the captured plume images with the help of a computer controlled image-grabbing system. The irradiated targets are characterized for surface morphology, structural, optical and electrical investigations using the diagnostics; scanning electron microscopy, X-ray diffraction, rotating compensator auto-aligned ellipsometer and four-point probe, respectively. The value of maximum intensity emitted by Pt plasma plume is 250 grey scales. Surfaces of the target metals are modified by craters, moltens and redeposited material. Laser-induced periodic surface structures are produced at low laser fluence. Irradiation of Pt causes changes in diffracted X-rays intensity and grain sizes, dislocation in line densities and strain in the target materials. Considerable changes occur in optical parameters as well. A decrease in electrical conductivity of the irradiated targets also takes place in an exponential way with the change in laser fluence.     

Different configurations of transferred atmospheric pressure plasma jet and their application to polymer treatment

The employment of atmospheric pressure plasma jets (APPJs) in a large sort of applications is limited by the adversities related to the size of the treated area and the difficulty to reach the target. The use of devices that employ long tubes in their structure has contributed significantly to overcome these challenges. In this work, two different plasma systems employing the jet transfer technique are compared. The main difference between the two devices is how the long plastic tube was assembled. The first one uses a copper wire placed inside a long plastic tube. The other device has a metallic mesh installed in a concentric arrangement between two coaxial plastic tubes. As a result, the two APPJ systems exhibit different properties, with the wire assembly being more powerful, also presenting higher values for the electrical current and rotational temperature when compared to the mesh mounting. X-ray photoelectron spectroscopy (XPS) demonstrates that both configurations were capable of inserting O-containing functional groups on the polypropylene (PP) surface. However, the transferred plasma jet with wire assembly was able to add more functional groups on the PP surface. The results from XPS analysis were corroborated with water contact angle measurements (WCA), being that lower WCA values were obtained when the PP surface presented higher amounts of O-containing groups. Furthermore, the results suggest that the APPJ with wire configuration is more appropriate for material treatments, while the transferred jet with mesh arrangement tends to present lower electrical current values, being more suitable for biological applications.     

Preparation of poly(3-hexylthiophene)/graphene nanocomposite via in situ reduction of modified graphite oxide sheets

Poly(3-hexylthiophene) (P3HT)/graphene nanocomposites were facilely prepared via an in situ reduction of modified graphite oxide (mGO) in the presence of P3HT. The chemical and aggregated structures of the P3HT/mGO nanocomposites were successfully characterized by means of atomic force microscope (AFM), transmission electron microscope (TEM), photoluminescence (PL), Raman spectra, X-ray photoelectron spectroscopy (XPS) and UV-vis measurements. Coated by P3HT, reduced modified graphite oxide (re-mGO) could significantly improve their processing problem in common organic solvent. It was shown that P3HT chains were attached to re-mGO sheets closely and there existed the pi-pi interaction between P3HT and re-mGO. The P3HT/mGO nanocomposites exhibited good dispersion in chloroform and show high storage stability (>20 days). This finding provides an efficient method for fabricating a light energy conversion materials with new optical and electrical properties, combining excellent mechanics, heat-stabilization properties of graphene and excellent optical, electrical, processing and film forming properties of soluble polythiophene materials.     

Effects of air dielectric barrier discharge plasma treatment time on surface properties of PBO fiber

In this paper, the effects of air dielectric barrier discharge (DBD) plasma treatment time on surface properties of poly(p-phenylene benzobisoxazole) (PBO) fiber were investigated. The surface characteristics of PBO fiber before and after the plasma treatments were analyzed by dynamic contact angle (DCA) analysis, scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). DCA measurements indicated that the surface wettability of PBO fiber was improved significantly by increasing the fiber surface free energy via air DBD plasma treatments. The results were confirmed by the improvement of adhesion of a kind of thermoplastic resin to PBO fiber which was observed by SEM, showing that more resin was adhering evenly to the fiber surface. AFM measurement revealed that the surface topography of PBO fiber became more complicated and the surface roughness was greatly enhanced after the plasma treatments, and XPS analysis showed that some new polar groups (e.g. OCO) were introduced on plasma treated PBO fiber surface. The results of this study also showed that the surface properties of PBO fiber changed with the elongation of plasma treatment time.     

Study on oxidation of pyrite by in situ absorption spectroscopy

Pyrite is one of the common natural mineral It is easily oxidized and brings heavy metal contaminations,therefore it is the main source of acidity mine drainage.The study on the dynamics of pyrite is helpful to comprehending the mechanism of its pollution.In the present paper,an experimental method was designed that phenanthroline reacts with Fe2+that is released from pyrite in solution,and produces stable orange-red complex compound.It can be detected by absorption spectroscopy.Insitu characterization of oxidation of pyrite can be achieved by this method.The results showed that the method is reliable and accurate,and it has high sensitivity and little interference; the reaction rate of oxidation increased linearly with time,corresponding to the characterization of zero-order reaction; oxidation of pyrite belongs to the surface reaction and the process of surface reaction is rate determining step.