Preparation and characterization of boron nitride coatings on carbon fibers from borazine by chemical vapor deposition

Boron nitride (BN) coatings were deposited on carbon fibers by chemical vapor deposition (CVD) using borazine as single source precursor. The deposited coatings were characterized by scanning electron microscopy (SEM), Auger electron spectroscopy (AES), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The effect of temperatures on growth kinetics, morphology, composition and structure of the coatings was investigated. In the low temperature range of 900 °C-1000 °C, the growth rate increased with increasing temperature complying with Arrhenius law, and an apparent active energy of 72 kJ/mol was calculated. The coating surface was smooth and compact, and the coatings uniformly deposited on individual fibers of carbon fiber bundles. The growth was controlled by surface reaction. At 1000 °C, the deposition rate reached a maximum (2.5 μm/h). At the same time, the limiting step of the growth translated to be mass-transportation. Above 1100 °C, the growth rate decreased drastically due to the occurrence of gas-phase nucleation. Moreover, the coating surface became loose and rough. Composition and structure examinations revealed that stoichiometric BN coatings with turbostratic structure were obtained below 1000 °C, while hexagonal BN coatings were deposited above 1100 °C. A penetration of carbon element from the fibers to the coatings was observed.     

Ultrathin ZrO2 films on Si-rich SiC(0 0 0 1)-(3 × 3): Growth and thermal stability

The growth and thermal stability of ultrathin ZrO₂ films on the Si-rich SiC(0 0 0 1)-(3 × 3) surface have been explored using photoelectron spectroscopy (PES) and X-ray absorption spectroscopy (XAS). The films were grown in situ by chemical vapor deposition using the zirconium tetra tert-butoxide (ZTB) precursor. The O 1s XAS results show that growth at 400 °C yields tetragonal ZrO₂. An interface is formed between the ZrO₂ film and the SiC substrate. The interface contains Si in several chemically different states. This gives evidence for an interface that is much more complex than that formed upon oxidation with O₂. Si in a 4+ oxidation state is detected in the near surface region. This shows that intermixing of SiO₂ and ZrO₂ occurs, possibly under the formation of silicate. The alignment of the ZrO₂ and SiC band edges is discussed based on core level and valence PES spectra. Subsequent annealing of a deposited film was performed in order to study the thermal stability of the system. Annealing to 800 °C does not lead to decomposition of the tetragonal ZrO₂ (t-ZrO₂) but changes are observed within the interface region. After annealing to 1000 °C a laterally heterogeneous layer has formed. The decomposition of the film leads to regions with t-ZrO₂ remnants, metallic Zr silicide and Si aggregates.     

SiC/SiO2 coating for improving the oxidation resistive property of carbon nanofiber

The SiC/SiO₂ deposition was performed to improve the oxidation resistive properties of carbon nanofiber (CNF) from electrospinning at elevated temperatures through sol-gel process. The stabilized polyacrylonitrile (PAN) fibers were coated with SiO₂ followed by heat treatment up to 1000 and 1400 °C in an inert argon atmosphere. The chemical compositions of the CNFs surface heat-treated were characterized as C, Si and O existing as SiC and SiO₂ compounds on the surface. The uniform and continuous coating improved the oxidation resistance of the carbon nanofibers. The residual weight of the composite was 70-80% and mixture of SiC, SiO₂ and some residual carbon after exposure to air at 1000 °C.     

Deposition and growth kinetics studies of thin zirconium dioxide films by UVILS-CVD

We report the deposition of thin zirconium dioxide films on Si(1 0 0) by a technique of ultraviolet-assisted injection liquid source chemical vapor deposition (UVILS-CVD) by using ultraviolet with 222 nm radiation. The alkoxide zirconium(IV) tert-butoxide (Zr[OC(CH₃)₃]₄) was used as precursor while nitrous oxide was driven into the reaction chamber as an oxidizing agent. The ZrO₂ films were deposited under various conditions and characterized by ellipsometry, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction and scanning electron microscopy. The growth rate decreased with the increasing of substrate temperatures from 200 to 400 °C. Deposition rate of 20 nm/min was observed at a substrate temperature of 350 °C. There was a liner relation between the thicknesses of the films and deposition times. As a result the thicknesses can be accurately controlled by changing the number of drops of precursor introduced by the injection liquid source. The growth rate increased with the increasing concentrations of the precursor, nevertheless the trend stopped when the concentration exceeded 8.5%. The growth kinetics were also studied and the results were fit to a three-step kinetic model involving a photo chemical reaction, a reversible precursor absorption process and a following irreversible deposition reaction.     

Preparation and characterization of the electrodeposited Cr-Al2O3/SiC composite coating

To increase the SiC content in Cr-based coatings, Cr-Al₂O₃/SiC composite coatings were plated in Cr(VI) baths which contained Al₂O₃-coated SiC powders. The Al₂O₃-coated SiC composite particles were synthesized by calcining the precursor prepared by heterogeneous deposition method. The transmission electron microscopy analysis of the particles showed that the nano-SiC particle was packaged by alumina. The zeta potential of the particles collected from the bath was up to +23 mV, a favorable condition for the co-deposition of the particles and chromium. Pulse current was used during the electrodeposition. Scanning Electron Microscopy (SEM) indicated that the coating was compact and combined well with the substrate. Energy dispersive X-ray analysis of Cr-Al₂O₃/SiC coatings demonstrated that the concentration of SiC in the coating reached about 2.5 wt.%. The corrosion behavior of the composite coating was studied by potentiodynamic polarization and electrochemical impedance spectroscopy techniques. The data obtained suggested that the Al₂O₃/SiC particles significantly enhanced the corrosion resistance of the composite coating in 0.05 M HCl solution.     

Photoluminescence in amorphous (PbLa)TiO3 thin films deposited on different substrates

Pb_1−XLa_XTiO₃ thin films, (X=0.0; 13 and 0.27 mol%) were prepared by the polymeric precursor method. Thin films were deposited on Pt/Ti/SiO₂/Si (1 1 1), Si (1 0 0) and glass substrates by spin coating, and annealed in the 200-300°C range in an O₂ atmosphere. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used for the microstructural characterization of the thin films. Photoluminescence (PL) at room temperature has been observed in thin films of (PbLa)TiO₃. The films deposited on Pt/Ti/SiO₂/Si substrates present PL intensity greater than those deposited on glass and silicon substrates. The intensity of PL in these thin films was found to be dependent on the thermal treatment and lanthanum molar concentration.     

Thorn-like BN nanostructures

Thorn-like BN nanostructures that the nanosize hexagonal BN (h-BN) layers are randomly stacked looking like thorns were synthesized using thermal chemical vapor deposition of B/B₂O₃ under the flow of NH₃ at 1200 °C. They can grow self-assembled forming the microsize lumps, and also deposit as sheathing layers on the pre-grown SiC nanowires with a controlled thickness in the range 20-100 nm. The spreading of the thorn-like BN layers as the sheathing layers results in a significantly enhanced surface area, 2400 m²/g.     

Effect of deposition temperature on orientation and electrical properties of (K0.5Na0.5)NbO3 thin films by pulsed laser deposition

Lead-free ferroelectric K_0.5Na_0.5NbO₃ (KNN) thin films have been prepared on Pt/TiO₂/SiO₂/Si substrates by pulsed laser deposition process. The structures, crystal orientations and electrical properties of thin films have been investigated as a function of deposition temperature from 680 °C to 760 °C. It is found that the deposition temperature plays an important role in the structures, crystal orientations and electrical properties of thin films. The crystallization of thin films improves with increasing deposition temperature. The thin film deposited at 760 °C exhibits strong (0 0 1) preferential orientation, large dielectric constant of 930 and the remnant polarization of 8.54 μC/cm².     

Atomic layer deposition of PbZrO3 thin films

In this paper, we report on the preparation of lead zirconate films for the first time using atomic layer deposition in an attempt to investigate some of the film properties and also to evaluate possible use of the precursor combination to prepare more complex lead titanate zirconate. In the depositions tetraphenyl lead (Ph₄Pb) was used as the lead and zirconium 2,2,6,6-tetramethyl-3,5-heptadionato (Zr(thd)₄) as the zirconium precursor, while ozone was used as the oxygen source. Film growth, stoichiometry and quality were studied using different pulsing ratios at deposition temperatures of 275 and 300 °C. According to X-ray diffraction, the crystalline perovskite phase was observed when films deposited on SrTiO₃(1 0 0) were annealed at 600 °C. Surface roughness was reduced for lead deficient films as well as in annealed samples.     

Low-temperature oxidation of SiC surfaces by supercritical water oxidation

The oxidation process on silicon carbide (SiC) surfaces is important for wide bandgap power semiconductor devices. We investigated SiC oxidation using supercritical water (SCW) at high pressure and temperature and found that a SiC surface can be easily oxidized at low temperature. The oxidation rate is 10 nm/min at 400 °C and 25 MPa, equal to that of conventional thermal dry oxidation at 1200 °C. Low-temperature oxidation should contribute to improved performance in future SiC devices. Moreover, we found that SCW oxidation at 400 °C forms a much smoother SiO₂/SiC interface than that obtained by conventional thermal dry oxidation. A higher oxidation rate and smaller microroughness are achieved at a lower oxidation temperature owing to the high density of oxidizers under SCW conditions.     

Photoluminescence characteristics from amorphous SiC thin films with various structures deposited at low temperature

Hydrogenated amorphous SiC thin films deposited at low substrate temperature (100 °C) show the different bonding configurations and microstructures which depend on the carbon concentrations in the films controlled by the gas ratio R of methane to silane during the deposition. Photoluminescence characteristics are investigated for these samples with different structures. A strong luminescence in red light region can be observed for samples deposited with low gas ratio R which is significantly reduced its intensity with increasing the carbon concentrations in the films. On the other hand, the luminescence bands located at blue-green light region are detected under UV light excitation for samples deposited with high gas ratio R, which can be associated with the existence of amorphous SiC clusters in the films.     

Optical properties of ITO/TiO2 single and double layer thin films deposited by RPLAD

Indium tin oxide (ITO) and titanium dioxide (TiO₂) single layer and double layer ITO/TiO₂ films were prepared using reactive pulsed laser ablation deposition (RPLAD) with an ArF excimer laser for applications in dye-sensitized solar cells (DSSCs). The films were deposited on SiO₂ substrates either at room temperatures (RT) or heated to 200-400 °C. Under optimized conditions, transmission of ITO films in the visible (vis) range was above 89% for films produced at RT and 93% for the ones deposited at higher temperatures. Increasing the substrate temperature from RT to 400 °C enhances the transmission of TiO₂ films in the vis-NIR from about 70% to 92%. High transmission (≈90%) was observed for the double layer ITO/TiO₂ with a transmission cut-off above 900 nm. From the transmission data, the energies gaps (E_g), as well as the refractive indexes (n) for the films were estimated. n ≈ 2.03 and 2.04, respectively for ITO films and TiO₂ film deposited at 400 °C in the visible region. Post-annealing of the TiO₂ films for 3 h at 300 and 500 °C was performed to enhance n. The refractive index of the TiO₂ films increases with the post-annealing temperature. The direct band gap is 3.6, 3.74 and 3.82 eV for ITO films deposited at RT, 200, and 400 °C, respectively. The TiO₂ films present a direct band gap of 3.51 and 3.37 eV for as deposited TiO₂ films and when annealed at 400 °C, respectively. There is a shift of about 0.1 eV between ITO and ITO/TiO₂ films deposited at 200 °C. The shift decreases by half when the TiO₂ film was deposited at 400 °C. Post-annealing was also performed on double layer ITO/TiO₂.     

Luminescence properties of Mn doped Zn2SiO4 phosphor films synthesized by combustion CVD

Zn₂SiO₄:Mn²⁺ phosphor films were successfully prepared by a novel combustion chemical vapor deposition (CCVD) method. In the CCVD process, a flammable solution, containing precursor materials, is atomized and sprayed through a specially designed nozzle and ignited to form a combustion flame. This enables crystallized films to be directly deposited onto a substrate in open-atmosphere with no post deposition heat treatment. SEM images indicated that the film deposited at 1200 °C consisted of densely packed particles with a fine grain size of several 100 nm. Strong Photoluminescence (PL) and cathodoluminescence (CL) intensities were observed with Zn₂SiO₄:Mn²⁺ samples deposited at a substrate temperature of 1200 °C exhibiting the best crystallinity and highest luminescence. The optimum doping level for films deposited using CCVD was found to be ∼4 mol% Mn²⁺ of starting concentration, with a maximum CL luminescence equivalent to 53% of the luminescence measured from a commercial powder phosphor. A relatively fast CL decay with life time about 0.6-0.7 ms was also observed from these films.     

Synthesis and characterization of porous crystalline SiC thin films prepared by radio frequency reactive magnetron sputtering technique

Hexagonal SiC thin films have been deposited using radio frequency reactive magnetron sputtering technique by varying the substrate temperature and other deposition conditions. Prior to deposition surface modification of the substrate Si(1 0 0) played an important role in deposition of the hexagonal SiC structure. The effect of substrate temperature during deposition on structure, composition and surface morphology of the SiC films has been analyzed using atomic force microscopy, Fourier transform infrared spectroscopy and spectroscopic ellipsometry. X-ray diffraction in conventional θ-2θ mode and omega scan mode revealed that the deposited films were crystalline having 8H-SiC structure and crystallinity improved with increase of deposition temperature. The bonding order and Si-C composition within the films showed improvement with the increase of deposition temperature. The surface of thin films grew in the shape of globes and columns depending upon deposition temperature. The optical properties also showed improvement with increase of deposition temperature and the results obtained by ellipsometry reinforced the results of other techniques.     

Characteristics of Ti0.97Co0.03O2:Sb0.01 dilute magnetic semiconducting thin films deposited at 500 °C by pulsed laser deposition

Epitaxial Ti_0.97Co_0.03O₂:Sb_0.01(TCO:Sb) films were deposited on R-Al₂O₃ (1 1 0 2) substrates at 500 °C in various deposition pressures by pulsed laser deposition. The solubility of cobalt within the films increases with decreasing deposition pressure at a deposition temperature of 500 °C. The TCO:Sb films deposited at 5×10⁻⁶ Torr exhibit a p-type anomalous Hall effect having a hole concentration of 6.1×10²²/cm³ at 300 K. On the other hand, films deposited at 4×10⁻⁴ Torr exhibits an n-type anomalous Hall effect having an electron concentration of about 1.1×10²¹/cm³. p- or n-type DMS characteristics depends on the change of the structure of TCO:Sb films and the solubility of Co is possible by controlling the deposition pressure.     

Preparation and characterization of pulsed laser deposition (PLD) SiC films

Si K-edge XAFS was used to characterize a stoichiometric SiC film prepared by pulsed KrF laser deposition. The film was deposited on a p-type Si(1 0 0) wafer at a substrate temperature of 250 °C in high vacuum with a laser fluence of ∼5 J/cm². The results reveal that the film contains mainly a SiC phase with an amorphous structure in which the Si atoms are bonded to C atoms in its first shell similar to that of crystalline SiC powder but with significant disorder.     

Synthesis and materials properties of transparent conducting In2O3 films prepared by sol-gel-spin coating technique

Transparent conducting indium oxide (In₂O₃) thin films have been prepared on glass substrates by the simple sol-gel-spin coating technique. These films have been characterized by X-ray diffraction, resistivity and Hall effect measurements, optical transmission, scanning electron microscopy and atomic force microscopy for their structural, electrical, optical and morphological properties. The influence of spin parameters, number of coating, process temperature on the quality of In₂O₃ films are studied. In the operating range of deposition, 400-475 °C, all the films showed predominant (2 2 2) orientation. Films deposited at optimum process conditions exhibited a resistivity of 2×10⁻² Ω cm along with the average transmittance of about 80% in the visible spectral range (400-700 nm).     

TiO2 thick films supported on reticulated macroporous Al2O3 foams and their photoactivity in phenol mineralization

TiO₂ thick films deposited on macroporous reticulated Al₂O₃ foams with pore size of 10 ppi and 15 ppi were prepared using dip coating from slurries of Aeroxide^® P25 nanopowder and precipitated titania. All prepared films have sufficiently good adhesion to the surface of the substrate also in case of strongly cracked films. No measurable release of deposited TiO₂ after repeated photocatalytic cycles was observed. The photocatalytic activity was characterized as the rate of mineralization of aqueous phenol solution under irradiation of UVA light by TOC technique. The best activity was obtained with Aeroxide^® P25 coated Al₂O₃ foam with the pore size of 10 ppi, annealed at 600 °C. The optimal annealing temperature for preparation of films from precipitated titania could be determined at 700 °C. Films prepared by sol-gel deposition technique were considerably thinner compared to coatings made of suspensions and their photocatalytic activity was significantly smaller.     

Effect of humidity and UV-assistance on the preparation of erbium doped alumina by aerosol MOCVD process

The effect of deposition temperature, relative humidity of carrier gas and UV-assistance on the growth of Erbium-doped aluminium oxide films has been studied. The films were prepared from aluminium acetylacetonate (Al(C₅H₇O₂)₃) and erbium (III) Tris(2,2,6,6-tetramethyl-3,5-heptanedionate) (Er(TMHD)₃) by UV and aerosol-assisted metal-organic chemical vapour deposition, using air with controlled humidity as carrier gas. Amorphous transparent films were deposited between 350 and 460 °C. It was observed that UV assistance allows a large decrease down to 5 kJ/mol of the activation energy of the deposition reaction for deposition temperatures lower than 420 °C. More over, depositing under high air humidity induced higher deposition rate, lower level of organic contamination and higher film density. Under these conditions Er-doped aluminium oxide films with a refractive index value of 1.71 were obtained at 460 °C.     

The influence of substrate temperature and annealing on the properties of pulsed laser-deposited YIG films on fused quartz substrate

Yttrium iron garnet (YIG) thin films were deposited on fused quartz substrate at different substrate temperatures (T_s) varying from room temperature (RT) to 850 °C using pulsed laser deposition (PLD) technique. All the films in the as-deposited state were X-ray amorphous and non-magnetic at RT. The film deposited at RT after annealing at temperatures T_a?700 °C showed both X-ray peaks and the magnetic order. The films deposited at higher T_s (500–850 °C) and then annealed at 700 °C resulted in better-quality films with higher 4πM_s value. The highest value of magnetization was for the sample deposited at 850 °C and annealed at 700 °C, which is 68% of the bulk 4πM_s value.