Influence of Co doping content on its valence state in Zn1−xCoxO (0 ≤ x ≤ 0.15) thin films

Zn_1−xCo_xO (0 ≤ x ≤ 0.15) thin films grown on Si (1 0 0) substrates were prepared by a sol-gel technique. The effects of Co doped on the structural, optical properties and surface chemical valence states of the Zn_1−xCo_xO (0 ≤ x ≤ 0.15) films were investigated by X-ray diffraction (XRD), ultraviolet-visible spectrometer and X-ray photoelectron spectroscopy (XPS). XRD results show that the Zn_1−xCo_xO films retained a hexagonal crystal structure of ZnO with better c-axis preferred orientation compared to the undoped ZnO films. The optical absorption spectra suggest that the optical band-gap of the Zn_1−xCo_xO thin films varied from 3.26 to 2.79 eV with increasing Co content from x = 0 to x = 0.15. XPS studies show the possible oxidation states of Co in Zn_1−xCo_xO (0 ≤ x ≤ 0.05), Zn_0.90Co_0.10O and Zn_0.85Co_0.15O are CoO, Co₃O₄ and Co₂O₃, with an increase of Co content, respectively.     

AlN, GaN, AlxGa1 − xN nanotubes and GaN/AlxGa1 − xN nanotube heterojunctions

Semiconductor optoelectronic devices based on GaN and on InGaN or AlGaN alloys and superlattices can operate in a wide range of wavelengths, from far infrared to near ultraviolet region. The efficiency of these devices could be enhanced by shrinking the size and increasing the density of the semiconductor components. Nanostructured materials are natural candidates to fulfill these requirements. Here we use the density functional theory to study the electronic and structural properties of (10,0) GaN, AlN, Al_xGa_1 − xN nanotubes and GaN/Al_xGa_1 − xN heterojunctions, 0<x<1. The Al_xGa_1 − xN nanotubes exhibit direct band gaps for the whole range of Al compositions, with band gaps varying from 3.45 to 4.85 eV, and a negative band gap bowing coefficient of −0.14 eV. The GaN/Al_xGa_1 − xN nanotube heterojunctions show a type-I band alignment, with the valence band offsets showing a non-linear dependence with the Al content in the nanotube alloy. The results show the possibility of engineering the band gaps and band offsets of these III-nitrides nanotubes by alloying on the cation sites.     

Disorder induced ferromagnetism in the Cu-doped molybdate SrMo1−xCuxO3 (0≤x≤0.20)

The effect of Cu-doping at Mo-site on structural, magnetic, electrical transport and specific heat properties in molybdates SrMo_1−xCu_xO₃ (0≤x≤0.2) has been investigated. The Cu-doping at Mo-site does not change the space group of the samples, but decreases the structural parameter a monotonously. The magnetic properties change from Pauli-paramagnetism for x=0 to exchange-enhanced Pauli-paramagnetism for x=0.05 and 0.10, and then ferromagnetism for x=0.15 and 0.20. All samples exhibit metallic-like transport behavior in the whole temperature range studied. The magnitude of resistivity increases initially to x=0.10 and then decreases with increasing Cu-doping concentration. The results are discussed according to the electron localization due to the disorder effect induced by the random distribution of Cu at Mo site in the samples. In addition, the temperature dependence of specific heat for the Cu-doped sample has also been studied.     

Effect of Cr on the magnetic properties of evaporated CoxCr1−x/Si(1 0 0) and CoxCr1−x/glass thin films

Series of Co_xCr_1−x thin films have been evaporated under vacuum onto Si(1 0 0) and glass substrates. Thickness ranges from 17 to 220 nm, and x from 0.80 to 0.88. Alternating gradient field magnetometer (AGFM) measurements provided saturation magnetization values ranging from 220 to 1200 emu/cm³. Values of squareness exceeding 0.8 have been measured. Coercive field may reach values up to 700 Oe, depending on the percentage of chromium, as well as the substrate nature and the direction of the applied magnetic field. The saturation magnetization value decreases as the Cr content increases. In order to study their dynamical magnetic properties, Brillouin Light Scattering (BLS) measurements have been performed on these samples. Stiffness constant value and anisotropy magnetic field were adjusted to fit the experimental BLS spectra. These results are analyzed and correlated.     

Influence of Pr-doping on structural, electronic transport, magnetic properties of perovskite molybdates Sr1−xPrxMoO3 (0≤x≤0.15)

The effect of Pr-doping on structural, electronic transport, magnetic properties in perovskite molybdates Sr_1−xPr_xMoO₃ (0≤x≤0.15) has been investigated. The Pr-doping at Sr-site does not change the space group of the samples, but decreases the lattice parameter a. The magnitude of resistivity ρ increases initially (x≤0.08) and then decreases with further increasing Pr-doping level x and ρ(T) behaves as T² and T dependence in the low-temperature range blow T* and high-temperature range of 150 K<T<350 K, related to the electron-electron (e-e) and electron-phonon (e-ph) scattering, respectively. The magnetic susceptibility χ value of the sample increases with increasing x and the χ(T) curve for all samples can be well described by the model of exchange-enhanced paramagnetism. The specific heat magnitude in the low-temperature region increases with increasing Pr-doping level. The specific heat value agrees with the classical Dulong-Petit phonon specific heat, C_cl=3k_BrN_A=124.7 J/mol K in the high-temperature region and the temperature dependence of the specific heat can be well described by the formula C_p(T)/T=γ_e+β_pT² in the low-temperature range. These behaviors can be explained by the competition between the increase in the density of state (DOS) at Fermi energy level and the disorder effect due to Pr-doping.     

Magnetic properties and room-temperature magnetocaloric effect in the doped antipervoskite compounds Ga1−xAlxCMn3 (0≤x≤0.15)

We report the effects of Al doping on the structure, magnetic properties, and magnetocaloric effect of antiperovskite compounds Ga_1−xAl_xCMn₃ (0≤x≤0.15). Partial substitutions of Al for Ga enhance the Curie temperature (from 250 K for x=0.0 to 312 K for x=0.15) and the saturation magnetization. On increasing the doping level x, the maximum values of the magnetic entropy change (−ΔS_M) decreases while the temperature span of −ΔS_M vs. T plot broadens. Furthermore, the relative cooling power (RCP) is also studied. For 20 kOe, the RCP value tends to saturate at a high doping level (for x=0.12, 119 J/kg at 296 K). However, at 45 kOe, the RCP value increases quickly with increasing x (for x=0.15, 293 J/kg at 312 K). Considering the relatively large RCP and inexpensive raw materials, Ga_1−xAl_xCMn₃ may be alternative candidates for room-temperature magnetic refrigeration.     

On the short-range order of the SiOx (0 ≤ x ≤ 2) surface

Fine (oscillating) structure (FS) in the elastically scattered electron spectra (ESES) [O. Bondarchuk, S. Goysa, I. Koval, P. Melnik, M. Nakhodkin, Surf. Sci. 258 (1991) 239; O. Bondarchuk, S. Goysa, I. Koval, P. Melnik, M. Nakhodkin, Surf. Rev. Lett. 4 (1997) 965] was used to investigate surface structure of the SiO_x (0 ≤ x ≤ 2). SiO_x surface with different stoichiometry was prepared by implantation of 500 eV oxygen ions into a silicon wafer. Fourier transformation of the FS ESES contains one peak at 2.32 Å for Si, two peaks at 1.62 Å and 2.65 Å for a-SiO₂ and three peaks centered at 1.6-1.7 Å, 2.1-2.2 Å and 2.65-3.04 Å for SiO_x. Peaks at 1.62 Å and 2.65 Å are assigned to Si-O and O-O nearest distances correspondently. Ratio of the area under the peak at 2.65 Å to the area under the peak at 1.62 Å turned out to be not constant but grows linearly with the composition parameter x. The latter is considered to prove validity of the Random Bond Model to describe short-range order on the surface of non-stoichiometric silicon oxide.     

Magnetic/structural diagram, chemical composition-dependent magnetocaloric effect in self-doped antipervoskite compounds Sn1−xCMn3+x (0≤x≤0.40)

The effects of Mn substitutions on the crystal structure, magnetic properties, and magnetocaloric effect (MCE) of antiperovskite Sn_1−xCMn_3+x (0≤x≤0.40) have been investigated detailedly. Both the Curie temperature (T_C) and the magnetizations at 40 kOe decrease with increasing x firstly for x≤0.10, and then increase with increasing x further. The type of magnetic transition changes from first-order to second-order around x=0.10 with increasing x. Chemical composition-dependent MCE is also studied around T_C. With increasing x, the maximal magnetic entropy changes decrease and the magnetic phase transitions broaden. Accordingly, the relative cooling power (RCP) increases with increasing x, reaching the largest values of ∼0.56 J/cm³ (∼75 J/kg) and ∼1.66 J/cm³ (∼221 J/kg) with the magnetic changes of 20 kOe and 48 kOe, respectively. Considering the large RCP, inexpensive, and innoxious raw materials, these serial samples Sn_1−xCMn_3+x are suggested to be potential room-temperature magnetic refrigerant materials.     

Electronic structure and ferromagnetism of polycrystalline Zn1−xCoxO (0≤x≤0.15)

The electronic structure of polycrystalline ferromagnetic Zn_1−xCo_xO (0.05≤x≤0.15) and the oxidation state of Co in it, have been investigated. The Co-doped polycrystalline samples are synthesized by a combustion method and are ferromagnetic at room temperature. XPS and optical absorption studies show evidence for Co²⁺ ions in the tetrahedral symmetry, indicating substitution of Co²⁺ in the ZnO lattice. However, powder XRD and electron diffraction data show the presence of Co metal in the samples. This give evidence to the fact that some Co²⁺ ion are incorporated in the ZnO lattice which gives changes in the electronic structure whereas ferromagnetism comes from the Co metal impurities present in the samples.     

X-ray photoelectron spectroscopy characterization of the layered intercalated compound K2xMn1 − xPS3

Polycrystalline powders of the layered MnPS₃ compound have been intercalated with K⁺ ions by ion-exchange to yield the K_2xMn_1 − xPS₃ intercalate. X-ray photoelectron spectroscopy has been applied to learn about the electronic structure of this compound. In particular, we have studied the XPS spectra of the Mn 2p and 3p, P and S 2p, K 2p and 3p core levels and of the valence band region. The binding energies for various core levels of the elements present in this compound and their observed chemical shifts are analyzed. The data give evidence for the lack of non-equivalent atoms of K, Mn, P and S. Shake-up satellites are present at the Mn 2p and 3p core levels. The occurrence of such lines allows us to hypothesize that K_2xMn_1 − xPS₃ is a large-gap insulating Mn compound. Confirmation that only an ion transfer accompanies the intercalation process is given from both the strong observed similarity with the corresponding XPS spectra in MnPS₃ and the observed binding energy positions of the K 2p and 3p levels. As regards the valence band XPS spectrum, the observed analogies with the corresponding XPS spectra of the pure compound and of other K compounds have allowed us to single out two regions and their probable contributors.     

The magnetostriction of Fe-(18−x) at% Ga-x at% Al (3≤x≤13.5) alloys

The ingot of Fe-(18−x) at% Ga-x at% Al (3≤x≤13.5) alloys was prepared from high purity elements using a high vacuum arc melting system. The X-ray diffraction patterns indicated that the alloys were disordered bcc A2 structure. The magnetostriction of the alloys was measured and the effect of partial substitution of Ga with Al on the magnetostriction of the alloys was investigated. Fe-9 at% Ga-9 at% Al alloy, the optimizing magnetostrictive alloy was found in Fe-(18−x) at% Ga-x at% Al (3≤x≤13.5) alloys. The saturated magnetostriction of the directional solidification Fe-9 at% Ga-9 at% Al rod is up to 135 ppm for 0 MPa and 221 ppm for 53 MPa. It was found that the alloy has the high linearity of the magnetostriction curve, the low hysteresis and saturated magnetic field, which suggests the directional solidification Fe-9 at% Ga-9 at% Al alloy is a potential candidate for magnetostrictive actuator and transducer applications.     

Magnetic and electronic structure in new iron-based layered SrFe1 − xCoxAsF systems

By using the first-principles calculation, we study the structural, magnetic, and electronic properties of the SrFeAsF compound and its Co-doped counterpart SrFe_1 − xCo_xAsF (x=0.125). It is shown that the competition of the nearest and next-nearest neighbor exchange coupling J₁ and J₂ between Fe ions gives rise to a frustrated striped antiferromagnetic order in SrFeAsF and an accompanied lattice distortion, while for the Co-doped case, both J₁ and J₂ decrease significantly as well as the lattice distortion, and thus the antiferromagnetic order is suppressed greatly. This is further confirmed by the electronic structure calculation that the density of states at the Fermi level increases with Co doping as well as the itinerancy of Fe d electron.     

Magnetic phase transitions of antiperovskite Mn3−xFexSnC (0.5≤x≤1.3)

The magnetization and electrical resistivity of Mn_3−xFe_xSnC (0.5≤x≤1.3) were measured to investigate the behavior of the complicated magnetic phase transitions and electronic transport properties from 5 to 300 K. The results obtained demonstrate that Fe doping at the Mn sites of Mn₃SnC induces a more complicated magnetic phase transition than that in its parent phase Mn₃SnC from a paramagnetic (PM) state to a ferrimagnetic (FI) state consisting of antiferromagnetic (AFM) and ferromagnetic (FM) components, while, with the change of Fe-doped content and magnetic field, there is a competition between the AFM component and FM component in the FI state. Both the Curie temperature (T_C) and the saturated magnetization M_s increase with increasing x. The FM component region becomes broader with further increasing Fe-doped content x. The external magnetic field easily creates a saturated FM state (and increased T_C) when . Fe doping quenches the negative thermal expansion (NTE) behavior from 200 to 250 K reported in Mn₃SnC.     

Structural,magnetic and magnetocaloric properties of AMn1−xGaxO3 compounds with 0≤x≤0.2

Structural, magnetic and magnetocaloric properties of manganites series with the AMn_1−xGa_xO₃ (A=La_0.75Ca_0.08Sr_0.17 and x=0, 0.05, 0.1 and 0.2) composition have been investigated to shed light on Ga-doping influence. Solid-state reaction method was used for preparation. From XRD study, all samples are found single phase and crystallize in the orthorhombic structure with the Pnma space group. The variation of the magnetization M vs. temperature T, under an applied magnetic field of 0.05 T, reveals a ferromagnetic–paramagnetic transition for all samples. The experimental results indicate that T_C decreases from 336 to 135 K with increasing Ga substitution. Magnetocaloric effect (MCE) was estimated, in terms of isothermal magnetic entropy change (−ΔS_M), using the M(T, μ₀H) data and employing the thermodynamic Maxwell equation. The maximum entropy change and Relative Cooling Power (RCP) show non-monotonic behaviors with increasing the concentration of Gallium. In fact, the maximum value of ΔS_Mmaxof AMn_1−xGa_xO₃ for x=0.00 and 0.2 samples is found to be, respectively, 2.87 and 1.17 J/kg/K under an applied magnetic field change of 2 T. For the same applied magnetic field (μ₀H=2 T), the RCP values are found to vary between 97.58 and 89 J/kg.     

Structural, transport, and magnetic properties in the Ti-doped manganites LaMn1−xTixO3 (0≤x≤0.2)

The magnetism and transport properties of the samples LaMn_1−xTi_xO₃ (0≤x≤0.2) were investigated. All samples show a rhombohedral structure () at room temperature. The sample with x=0 undergoes the paramagnetic-ferromagnetic (PM-FM) transition accompanied by an insulator-metal (I-M) transition due to the oxygen excess. The doped samples show ferromagnetism and cluster behavior at low temperatures. Though no I-M transition associated with the PM-FM transition appears, the magnetoresistance (MR) effect was observed especially at low temperatures under the applied fields of 0.5 T. Due to the fact that the oxygen content in the Ti-doped samples is nearly stochiometry (3.01) and the Hall resistivity at room temperature is negative, the ferromagnetism in LaMn_1−xTi_xO₃ (0.05≤x≤0.2) is believed to be consistent with the Mn²⁺-O-Mn³⁺ double exchange (DE) mechanism. These results suggest that DE can be obtained by direct Mn-site doping.     

Synthesis, structural and transport properties of nanocrystalline La1−xBaxMnO3 (0.0≤x≤0.3) powders

Nanocrystalline La_1−xBa_xMnO₃ (0.0≤x≤0.3) manganites have been prepared by a simple and instantaneous solution combustion method, which is a low temperature initiated synthetic route to obtain fine-grained powders with relatively high surface area. The phase purity and crystal structure of the combustion products are carried out by powder X-ray diffraction. The as-made nanopowders are in cubic phase. On calcination to 900 °C, barium doped manganites retain cubic phase, whereas barium free manganite transformed to rhombohedral phase. The scanning electron microscope (SEM) results revealed that the combustion-derived compounds are agglomerated with fine primary particles. The doped manganites have surface area in the range 24-44 m²/g. The surface area of the manganites increases with barium content, whereas it decreases on calcination. Both undoped and doped lanthanum manganites show two active IR vibrational modes at 400 and 600 cm⁻¹. The low temperature resistivity measurements have been carried out by four-probe method down to 77 K. All the samples exhibit metal-insulator behaviour and metal-insulator transition temperature (T_M-I) in the range 184-228 K and it is interesting to note that, as the barium content increases the T_M-I shifts to lower temperature side. The maximum T_M-I of 228 K is observed for La_0.9Ba_0.1MnO₃ sample.     

Structural, magnetic and electronic transport properties of MnxGe1−x/Ge(0 0 1) films grown by MBE at 350 °C

We report on the structural, magnetic and electronic transport properties of thin Mn_xGe_1−x films grown at 350 °C. Isolated Mn₅Ge₃ nanoclusters, about 100 nm in size, were formed at the top surface of the film, dominating the magnetic properties of the whole film. Electronic transport properties show Mn doping effect indicating the presence of substitutional Mn ions dispersed in the Ge host, contributing to the formation of a Mn_xGe_1−x diluted phase. Electrical behaviour indicates a saturation effect with the raise of the nominal Mn concentration in the film, above x ≅ 0.03.     

The correlation between structure and magnetic properties in the manganites La0.7Ca0.3−xTexMnO3 (0≤x≤0.15)

The effect of Te-doping at La-site on structural, magnetic and transport properties in the manganites La_0.7Ca_0.3−xTe_xMnO₃ (0≤x≤0.15) has been investigated. All samples show an orthorhombic structure (O′-Pbnm) at room temperature. It shows that the Mn-O-Mn bond angle decreases and the Mn-O bond length increases with the increase in the Te content. All samples exhibit an insulator-metal (I-M) transition and the resistivity increases with the increase in the Te-doping level. Additionally, the Curie temperature T_c decreases and the transition becomes broader with increasing Te-doping level, in contrast, the magnetization of Te-doping samples at low temperatures decrease with increasing x as x≤0.10 and then increase with further increasing x to 0.15. The results are discussed in terms of Jahn-Teller (JT) vibrational anisotropy Q₃/Q₂ and the opening of the new DE channel between Mn²⁺-O-Mn³⁺ due to the introduction of Mn²⁺ ions because of the substitution of Te⁴⁺ ions for Ca²⁺ ions.     

Structure, magnetic, and transport properties of the Co-doped manganites La0.9Te0.1Mn1−xCoxO3 (0≤x≤0.25)

The effect of Co doping at Mn-site on the structural, magnetic and electrical transport properties in electron-doped manganties La_0.9Te_0.1Mn_1−xCoxO₃ (0≤x≤0.25) has been investigated. The room temperature structural transition from rhombohedra to orthorhombic (Pbnm) symmetry is found in these samples with x≥0.20 by the Rietveld refinement of X-ray powder diffraction patterns. All samples undergo the paramagnetic-ferromagnetic (PM-FM) phase transition. The Curie temperature T_C of these samples decreases and the transition becomes broader with increasing Co-doping level. The magnetization magnitude of Co-doping samples increases at low temperatures with increasing Co-doping level for x≤0.15 and decreases with increasing Co-doping content further. The metal-insulator (M-I) transitions observed in the sample with x=0 are completely suppressed with Co doping, and the resistivity displays semiconducting behavior within the measured temperature region for these samples with x>0. All results are discussed according to the changes of the structure parameters and magnetic exchange interaction caused by Co-doping. In addition, the different effects between the Co doping and Cu doping in the Mn site for the electron-doped manganites are also discussed.     

The effect of Fe doping on structural, magnetic and electrical transport properties of CaMn1−xFexO3 (x=0-0.35)

A comprehensive study of the effect of Fe doping on CaMnO₃ is carried out by means of experiments on the structural, transport conduction, and magnetic properties of CaMn_1−xFe_xO₃ (0≤x≤0.35). With a sol-gel process for sample preparation, Fe is substituted for Mn up to x=0.35. This substitution substantially brings out the lattice expansion and gradually suppresses the antiferromagnetism. For x=0.08 and 0.10 in particular, the magnetization curves with a field-cooled mode under the field of 1 kOe behave as those of a ferrimagnetic-like system and present low-temperature negative magnetization. For x≥0.15, the negative magnetization phenomenon disappears, and a ferromagnetic component coexists with an antiferromagnetic one, but the antiferromagnetic interaction still dominates in these compounds. Electrical transport measurements show insulating behavior for all compositions. Fe doping, even at a level as low as x=0.02, can cause a marked resistivity increase in the temperature range studied. Further increasing the Fe content causes the resistivity to gradually decrease due to the increasing carrier presence.