电子光学教学实验的开发

介绍利用单踪示波器的阴极射线管,结合模拟软件,开展电子光学实验教学的教学内容设计和教学实践情况.电子光学实验教学的开展有利于学生掌握相关知识和研究方法,受到学生欢迎.     

Secondary electron yield enhancement by MgO capping layers

The yield of secondary electrons emitted from an epitaxial three monolayer (3 ML) NiO(1 0 0)/Ag(1 0 0) film excited by soft X-ray linearly polarized synchrotron radiation at the Ni L_2,3 absorption threshold has been measured for different values of the thickness of a MgO(1 0 0) capping layer. Compared with the as grown 3 ML NiO(1 0 0)/Ag(1 0 0) film, we observe a significant enhancement by about a factor 1.2 of the secondary electron emission for the capped 8 ML MgO(1 0 0)/3 ML NiO(1 0 0)/Ag(1 0 0) sample. A further substantial yield enhancement by a factor 1.6 with respect to the uncapped NiO sample is observed after deposition of an additional 8 ML MgO(1 0 0) film, for a total capping layer thickness of 16 ML. The observed secondary electron yield enhancement is discussed in terms of modified electronic structure, surface work function changes, and characteristic electron propagation lengths.     

Refractive index and material dispersion in relativistic electron optics

The refractive index and material dispersion associated with relativistic motion of electrons are calculated. Moreover, the wavelength dependence of refractive index is compared with the Sellmeier model for the index of refraction of lightwaves.     

Secondary electron emission of sputtered alumina films

Secondary electron emission yieldδ was measured for thin films of alumina prepared byrf sputtering technique. Single pulse method was used along with 4-gridleed optics system to determineδ. Maximum value of 4·3 was obtained at primary energy of 350 eV. The Dionne’s theory was used to analyse the results and the emission probability escape depth and absorption coefficient of secondaries were also estimated. Fairly good correlation is observed between experimental and theoretical values ofδ for beam energies upto 1 keV.     

Electron optics for high throughput low energy electron microscopy

Novel electron-optical components and concepts aiming at improving the throughput and extending the applications of a low energy electron microscope (LEEM) have been developed. An immersion magnetic objective lens can substantially reduce e-e interactions and the associated blur, as electrons do not form a sharp crossover in the back-focal plane. The resulting limited field of view of the immersion objective lens in mirror mode can be eliminated by immersing the cathode of the electron gun in a magnetic field. A dual illumination beam approach is used to mitigate the charging effects when the LEEM is used to image insulating surfaces. The negative charging effect, created by a partially absorbed mirror beam, is compensated by the positive charging effect of the secondary beam with an electron yield exceeding 1. On substrates illuminated with a tilted beam near glancing incidence, large shadows are formed on even the smallest topographic features, easing their detection. On magnetic substrates, the magnetic flux leaking above the surface can be detected with tilted illumination and used to image domain walls with high contrast.     

Paraxial imaging electron optics and its spatial-temporal aberrations for a bi-electrode concentric spherical system with electrostatic focusing

The paraxial solutions play an important role in studying electron optical imaging system and its spatial-temporal aberrations, as was discussed in previous paper [1], but investigation of a bi-electrode concentric spherical system with electrostatic focusing directly from paraxial electron ray equation and paraxial electron motion equation has not been done before. In this paper, we shall use the paraxial equations to study the spatial-temporal trajectories and their aberrations for a bi-electrode concentric spherical system with electrostatic focusing.In the present paper, start from the paraxial ray equation and paraxial motion equation, the paraxial spatial-temporal trajectory of moving electron emitted from the photocathode has been solved for a bi-electrode concentric spherical system with electrostatic focusing. The paraxial static and dynamic electron optics, as well as the paraxial spatial-temporal aberrations in this system are then discussed, the general regularity of imaging in paraxial optical system has been explored. The paraxial spatial aberrations, as well as the paraxial temporal aberrations with different orders, have been defined and deduced, that are classified by the order of (?_z/?_ac)^1/2 and (?_T/?_ac)^1/2. Thus we get same conclusions about paraxial spatial and temporal aberrations as we have given in the previous paper and it completely shows that the paraxial spatial-temporal aberrations can be investigated directly from the paraxial ray equation and paraxial motion equation.     

分层校正自适应光学等晕区计算

在回顾单层模型与多层模型的基础上,首次导出按适当准则分层的大气等晕角普适表达式,并将贝克先前的结果作为一种特例包括在内.     

Secondary electron emission data of cesiated oxygen free high conductivity copper

Because of its relevance for negative hydrogen ion sources, the change in secondary electron emission with the adsorption of Cs on Cu was studied. Properly prepared disks of oxygen free high conductivity (OFHC) copper yielded a maximum secondary electron emission δ_max=1.54±3%. The deposition of ≈0.5 monolayer of Cs resulted in δ_max=3.40±3%.     

Surface EXAFS via differential electron yield

Surface‐sensitive analysis via extended X‐ray absorption fine‐structure (EXAFS) spectroscopy is demonstrated using a thickness‐defined SiO₂ (12.4 nm)/Si sample. The proposed method exploits the differential electron yield (DEY) method wherein Auger electrons escaping from a sample surface are detected by an electron analyzer. The DEY method removes local intensity changes in the EXAFS spectra caused by photoelectrons crossing the Auger peak during X‐ray energy sweeps, enabling EXAFS analysis through Fourier transformation of wide‐energy‐range spectral oscillations. The Si K‐edge DEY X‐ray absorption near‐edge structure (XANES) spectrum appears to comprise high amounts of SiO₂ and low Si content, suggesting an analysis depth, as expressed using the inelastic mean free path of electrons in general electron spectroscopy, of approximately 4.2 nm. The first nearest neighbor (Si—O) distance derived from the Fourier transform of the Si K‐edge DEY‐EXAFS oscillation is 1.63 Å. This value is within the reported values of bulk SiO₂, showing that DEY can be used to detect a surface layer of 12.4 nm thickness with an analysis depth of approximately 4.2 nm and enable `surface EXAFS' analysis using Fourier transformation.     

Secondary electron emission control in X-ray photoelectron spectroscopy

Secondary electron emission (SEE) is a major player in surface charging during X-ray photoelectron spectroscopy (XPS); its characteristics and applicability as a current source for electrical measurements are studied. We employ sample biasing and a top retarding grid to control the photoelectron current, and further compare their I–V characteristics with direct spectroscopy of the secondary electrons. Using silica-coated gold substrates, the effect of sample work function on the emitted secondary electrons is shown and fine control over the surface potential gradients, in the range of 10–100 meV, is achieved. XPS-based chemically resolved electrical measurements (CREM) can thus be extended to the positive current regime.     

Kinetic electron emission due to perpendicular impact of carbon ions on tungsten surfaces

Total electron yields for perpendicular impact of C⁺ ions on W have been measured for projectile energies from 0.2 keV to 7 keV. The data are compared with the data of C⁺ bombardment of gold and graphite in order to demonstrate general trends in kinetic electron yields at low projectile velocities. The total electron yields in the studied combinations of projectiles and substrates show a similar exponential dependence Γ ∝ (v/A) exp(−A/v), where A is a constant and v is the projectile velocity.     

Static and dynamic imaging electron optics and spatial-temporal aberrations in a bi-electrode spherical concentric system with electrostatic focusing

In imaging electron optics, for a concentric spherical system composed of two spherical electrodes with electrostatic focusing, the electrostatic potential distribution and the spatial-temporal trajectory of electron motion can be expressed by analytical forms. It is naturally to take such system as an ideal model to investigate the imaging properties, as well as the spatial-temporal aberrations, to analyze its particularity and to find the clue of universalities and regularities. Research on this problem has important significance, which can afford theoretical foundation not only in studying static electron optics for the night vision devices, but also in studying dynamic electron optics for high-speed image converter tubes.In the present paper, based on the practical electron ray equation and electron motion equation for a bi-electrode concentric spherical system with electrostatic focusing, the spatial-temporal trajectories of moving electrons emitted from the photocathode have been solved, the exact and approximate formulae for image position and flight time of electrons, have been deduced. Start from solutions of spatial-temporal trajectories, the electron optical spatial-temporal properties of this system are then discussed. According to the definitions of spatial-temporal aberrations, the paraxial and geometrical lateral aberrations, as well as the paraxial and geometrical temporal aberrations, have been deduced, that are classified by the order of and .     

提高砷化镓二次电子发射系数的探讨

介绍了延长负电子亲和势二次电子发射材料砷化镓的逸出深度的设计,并给出了经过特殊设计的这种砷化镓的能级示意图,然后对通常的砷化镓和经过特殊设计的砷化镓的二次电子发射系数的理论值进行了比较,得出:当原电子入射能量较低（小于10 keV）时,两种砷化镓的二次电子发射系数差值较小;当原电子入射能量较高（大于20 keV）时,经过特殊设计的砷化镓的二次电子发射系数比普通砷化镓的二次电子发射系数大,而且随着原电子入射能量的升高,两种砷化镓的二次电子发射系数差值也在增大。     

The charging stability of different silica glasses studied by measuring the secondary electron emission yield

This paper reports that the charging properties of lead silica,Suprasil silica and Infrasil silica are investigated by measuring the secondary electron emission(SEE) yield.At a primary electron beam energy of 25 keV,the intrinsic SEE yields measured at very low injection dose are 0.54,0.29 and 0.35,respectively for lead silica,Suprasil and Infrasil silica glass.During the first e-beam irradiation at a high injection current density,the SEE yields of lead silica and Suprasil increase continuously and slowly from their initial values to a steady state.At the steady state,the SEE yields of lead silica and Suprasil are 0.94 and 0.93,respectively.In Infrasil,several charging and discharging processes are observed during the experiment.This shows that Infrasil does not reach its steady state.Two hours later,all samples are irradiated again in the same place as the first irradiation at a low current density and low dose.The SEE yields of lead silica,Suprasil and Infrasil are 0.69,0.76 and 0.55,respectively.Twenty hours later,the values are 0.62,0.64 and 0.33,respectively,for lead silica,Suprasil and Infrasil.These results show that Infrasil has poor charging stability.Comparatively,the charging stability of lead silica is better,and Suprasil has the best characteristics.     

Study on contamination of projection optics surface for extreme ultraviolet lithography

Ru-capped Mo/Si multilayer mirrors were irradiated by EUV in a vacuum atmosphere with ethanol or decane gas, and their reflectivity changes by contamination were investigated by changing the amount of introduced gas. The reflectivity hardly decreased by EUV irradiation in the ethanol-introduced atmosphere. On the other hand, the reflectivity decreased by about 5% in the decane-introduced atmosphere at a decane pressure of P_Decane = 1.3 × 10⁻⁴ Pa, an EUV power of about 200 mW/mm², and an EUV dose of 150 J/mm². EUV irradiation to the Ru-capped multilayer mirrors was also performed in the presence of water vapor and decane. The surface oxidation by EUV irradiation with a water vapor pressure of PH₂O=1.3×10⁻⁵ Pa was controlled by the introduction of decane at a pressure of P_Decane = 7.0 × 10⁻⁷ to 1.3 × 10⁻⁶ Pa.     

Finite‐element modelling of multilayer X‐ray optics

Multilayer optical elements for hard X‐rays are an attractive alternative to crystals whenever high photon flux and moderate energy resolution are required. Prediction of the temperature, strain and stress distribution in the multilayer optics is essential in designing the cooling scheme and optimizing geometrical parameters for multilayer optics. The finite‐element analysis (FEA) model of the multilayer optics is a well established tool for doing so. Multilayers used in X‐ray optics typically consist of hundreds of periods of two types of materials. The thickness of one period is a few nanometers. Most multilayers are coated on silicon substrates of typical size 60 mm × 60 mm × 100–300 mm. The high aspect ratio between the size of the optics and the thickness of the multilayer (10⁷) can lead to a huge number of elements for the finite‐element model. For instance, meshing by the size of the layers will require more than 10¹⁶ elements, which is an impossible task for present‐day computers. Conversely, meshing by the size of the substrate will produce a too high element shape ratio (element geometry width/height > 10⁶), which causes low solution accuracy; and the number of elements is still very large (10⁶). In this work, by use of ANSYS layer‐functioned elements, a thermal‐structural FEA model has been implemented for multilayer X‐ray optics. The possible number of layers that can be computed by presently available computers is increased considerably.     

毫米波行波管电子光学系统的设计

 利用基于虚边界元法的VBGUN程序和基于边界元法的MOM程序,对一折叠波导毫米波行波管的电子光学系统进行了设计。设计过程中使用计算相关性系数的方法调节参数,通过计算敏感性系数以考察加工误差带来的影响。设计过程显示：低导流系数、小束腰、高压缩比的毫米波电子枪的层流性与电极尺寸相关性很大,易受到加工误差的影响;聚束系统的设计难点在于轴上峰值磁感应强度要受到漂移管半径的限制,这一点可以通过提高工作电压和降低电流来平衡,因此它的设计必须与慢波结构的设计同时进行。     

Polarization measurements of laboratory VUV light: a first comparison between multilayer polarizers and photoelectron angular distributions

The use of photoelectron angular distributions to determine the linear polarization of VUV light over a wide range of photon energies is demonstrated. Light at wavelengths from 256 to 736 Å, partially polarized by large angle reflections in a toroidal grating monochromator and at a refocus mirror, has been analyzed. The results are validated by comparison measurements at spot wavelengths using multilayer polarizers.     

Contribution of backscattered electrons to the total electron yield produced in collisions of 8–28 keV electrons with tungsten

It is shown experimentally that under energetic electron bombardment the backscattered electrons from solid targets contribute significantly (∼80%) to the observed total electron yield, even for targets of high backscattering coefficients. It is further found that for tungsten (Z = 74) with a backscattering coefficient of about 0.50, about 20% of the total electron yield is contributed by the total secondary electrons for impact energies in the range of 8–28 keV. The yield of true backscattered electrons at normal incidence (η ₀), total secondary electrons (δ) and the total electron yield (δ _tot) produced in collisions of 8–28 keV electrons with W have been measured and compared with predictions of available theories. The present results indicate that the constant-loss of primary electrons in the target plays a significant role in producing the secondary electrons and that it yields a better fit to the experiment compared to the power-law.      

纳米金刚石薄膜的二次电子发射特性

 简要介绍了微波等离子体化学气相沉积（MPCVD）方法在硅基底上制备纳米金刚石薄膜的过程,并对制备的薄膜进行了表面分析。在此基础上设计出了用来测定反射型二次电子发射系数的实验装置,得出了几种薄膜在不同入射能量下的发射系数,取得了二次发射系数为15的满意结果,表明纳米金刚石薄膜作为二次电子发射材料具有很好的应用前景。