Optimization of large-area YBa2Cu3O7-δ thin films by pulsed laser deposition for planar microwave devices

This paper presents high quality YBa₂Cu₃O_7-δ(YBCO) thin films on LaAlO₃ substrate for microwave devices prepared by pulsed laser deposition(PLD). The double-sided YBCO films cover a large area and have been optimized for key parameters relevant to microwave device applications, such as surface morphology and surface resistance(Rs).This was achieved by improving the target quality and increasing the oxygen pressure during deposition, respectively. To ev...     

Fast epitaxial growth of a-axis- and c-axis-oriented YBa2Cu3O7−δ films on (1 0 0) LaAlO3 substrate by laser chemical vapor deposition

a-axis- and c-axis-oriented YBa₂Cu₃O_7−δ (YBCO) films were epitaxially grown on (1 0 0) LaAlO₃ substrates by laser chemical vapor deposition. The preferred orientation in the YBCO film changed from the a-axis to the c-axis with increasing laser powers from 77 to 158 W (the deposition temperatures from 951 to 1087 K). The a-axis-oriented YBCO film showed in-plane epitaxial growth of YBCO [0 0 1]//LAO [0 0 1], and the c-axis-oriented YBCO film showed that of YBCO [0 1 0]//LAO [0 0 1]. A c-axis-oriented YBCO film with a high critical temperature of 90 K was prepared at a deposition rate of 90 μm h⁻¹, about 2-1000 times higher than that of metalorganic chemical vapor deposition.     

Effect of granularity and inhomogeneity in excess conductivity of YBa2Cu3O7−δ+xBaTiO3 superconductor

Synthesis of polycrystalline YBCO+xBaTiO₃ (x=1.0, 2.5, 5.0) superconductor has been done and the effects of granularity and inhomogeneities due to inclusions of nano-BaTiO₃ in excess conductivity are reported in this work. The phase formation, texture and grain alignments were analyzed through XRD and SEM techniques. SEM results reveal that the grain size is reduced and morphology is improved with the incorporation of nano-BaTiO₃ particles. Superconducting order parameter fluctuation (SCOPF) studies on the electrical conductivity were investigated from the resistivity vs. temperature data in the experimental domain relatively above T_c. Log(Δσ) vs. log(ε) plots show that the 2D to 3D crossover temperature (T_LD) that demarcates dimensional nature of fluctuation inside the grains is influenced by BaTiO₃ incorporation in YBCO matrix. An upward shift of T_LD in the mean field region has been observed as a consequent dominance of 3D region with increase in 1 wt% BaTiO₃ in the composites as compared to higher inclusions. It has been analyzed that microscopic inhomogeneities produced as a result of diffusion of a fraction of Ti ions into the grains affect fluctuations in the excess conductive region. The interplay of microscopic inhomogeneities produced inside the grains and mesoscopic inhomogeneities in the grain boundaries on the excess conductivity has been explained in terms of thermal fluctuations for the composites.     

Glassy carbon - A promising substrate material for pulsed laser deposition of thin Li1+xMn2O4−δ electrodes

The spinel LiMn₂O₄ is a promising candidate for future battery applications. If used as a positive electrode in a battery, the charging capacity of such a battery element is limited by the formation of a solid electrolyte interphase like layer between the electrolyte and the spinel. To study the electrolyte-electrode interaction during electrochemical cycling, spinel thin films are deposited as model electrodes on glassy carbon substrates by pulsed laser ablation. The obtained polycrystalline oxide thin films show a well defined surface morphology and are electrochemical active. Adhesion of these thin films on glassy carbon is in general poor, but can be improved considerably by a surface pretreatment or adding a thin metallic coating to the substrate prior deposition. The best adhesion is obtained for films deposited on argon plasma pretreated as well as Pt coated glassy carbon substrates. During the electrochemical characterization of Li_1.06Mn₂O_3.8 thin film electrodes, no additional reactions of the substrate are observed independent of the used electrolyte. The best cycle stability is achieved for films on Pt coated glassy carbon substrates.     

Co-L3 X-ray absorption near-edge structure analysis of Pr1−xCaxCoO3−δ and Pr1−xSrxCoO3−δ

The valence state of Co ions in Pr_1−xCa_xCoO_3−δ and Pr_1−xSr_xCoO_3−δ has been investigated by an analysis of the Co-L₃ X-ray absorption near-edge structure (XANES) profile. The observed intensity distributions of Co-L₃ XANES change continuously with increasing concentration of alkaline-earth ions. To investigate the origin of this change in the XANES profile, charge transfer multiplet calculations were carried out, which could successfully explain the change in the spectral profile; they also suggest that the valence state of Co ions in Pr_1−xCa_xCoO_3−δ and Pr_1−xSr_xCoO_3−δ is between 3+ and 4+ and increases gradually with the concentration of alkaline-earth ions.     

Electrical conductivity and structural stability of SrCo1−xFexO3−δ

Perovskite compounds in the system of SrCo_1−xFe_xO_3−δ (x=0.2, 0.4 and 0.6) were synthesized by solid state reaction. SrCo_1−xFe_xO_3−δ shows the p-type small polaron conduction behavior. Electrical conductivity and oxygen vacancy content decrease with increase in Fe content. The incorporation of Fe increases the structural stability of SrCo_1−xFe_xO_3−δ at low temperatures, while decreasing the structural stability at high temperatures. Oxygen partial pressure has a strong influence on electrical conductivity. At low oxygen partial pressure, SrCo_0.8Fe_0.2O_3−δ will transform from cubic to orthorhombic structure. This structure can remain in 5%H₂/Ar only for a short time and then dissociates into Sr₃Fe₂O_6.64 and Co due to the reduction of B-site elements.     

Enhanced flux pinning in pulsed laser deposited Y Ba2Cu3O7−δ : BaTiO3 nanocomposite thin films

The effect of incorporation of BaTiO₃(BTO) nanoparticles on the flux pinning properties of pulsed laser deposited YBCO:BTO thin films was studied. Substantial increase in the critical current density (J_C) and the pinning force density (F_p) of the nanocomposite thin films was observed. At 77 K, and zero applied magnetic field, the value of J_C for YBCO and YBCO:BTO (2%) thin films were 2.93 MA/cm² and 6.43 MA/cm², respectively. At the same temperature and an applied magnetic field of 4 T, the value of J_C increases from 3.6×10⁴ A/cm² for YBCO thin film to 2.7×10⁵ A/cm² for YBCO:BTO (2%) nanocomposite thin film. The study of temperature and field dependence of of YBCO and YBCO:BTO thin films indicates similar type of pinning. The lattice mismatch between YBCO and BTO seems to introduce more defects resulting in the improvement of flux pinning properties.     

Manifestation of vortex depinning transition in nonlinear current-voltage characteristics of polycrystalline superconductor Y1−xPrxBa2Cu3O7−δ

We present our recent results on the temperature dependence of current-voltage characteristics for polycrystalline Y_1−xPr_xBa₂Cu₃O_7−δ superconductors with x=0.0, 0.1 and 0.3. The experimental results are found to be reasonably well fitted for all samples by a power like law of the form V=R(I−Ic)^a(T). Here, we assume that a(T)=1+Φ₀IC(T)/2πkBT and IC(T)=IC(0)(1−T/TC)^3/2 for the temperature dependences of the power exponent and critical current, respectively. According to the theoretical interpretation of the obtained results, nonlinear deviation of our current-voltage characteristics curves from Ohmic behavior (with a(TC)=1) below TC is attributed to the manifestation of dissipation processes. They have a characteristic temperature Tp defined via the power exponent as a(Tp)=2 and are related to the current induced depinning of Abrikosov vortices. Both TC(x) and Tp(x) are found to decrease with an increase of Pr concentration x reflecting deterioration of the superconducting properties of the doped samples.     

Role of growth temperature and oxygen partial pressure on the structural and electrical properties of pulsed laser deposited La1−xSrxnO3−δ thin films

The paper presents the fabrication and characterization of La_0.65Sr_0.35MnO_3−δ (LSMO) polycrystalline thin films deposited directly on Si (1 0 0) substrates using pulsed laser deposition technique. Various deposition parameters like substrate temperature and oxygen partial pressure have been varied systematically to obtain stoichiometric, crack-free films with smooth surface morphology having nearly monodisperse grain size distribution. The substrate temperature variation from 600 to 800 °C had profound effects on the microstructure and topography of the deposited film, with optimum result being obtained at 700 °C. The variation of partial pressure of oxygen controls the deposition kinetics as well as the stoichiometry of the film in terms of oxygen vacancy, which influences the magnetic and electrical transport properties of the manganate films. The microstructure and crystallinity of the deposited films have been studied using X-ray diffraction, scanning electron microscopy and atomic force microscopy. A correlation between the oxygen stoichiometry and micro-structural and transport properties of the deposited films has been obtained.     

Relaxation of the normal electrical resistivity induced by high-pressure in strongly underdoped YBa2Cu3O7–δ single crystals

We investigate the relaxation of the normal electrical resistivity, induced by high-pressure in YBa₂Cu₃O_6.45 single crystals. It is determined that the pressure affects to the phase composition of the sample. Under pressure phases with different (but similar) critical temperatures form. It is determined that the application-removal pressure process is completely reversible. Above T_c the temperature dependence of the resistivity in the layers' plane at different hydrostatic pressures can be approximated with high accuracy with the scattering of electrons by phonons model. With increasing pressure, the residual resistance is reduced and the contribution of intraband s–s scattering increases. Additionally, the role of the interband s–d scattering and the Debye temperature is enhanced.     

Structure and magnetism in Ho1−xSrxCoO3−δ

We have magnetically and structurally characterized the Ho_1−xSr_xCoO_3−δ family of materials where 0.67≤x≤0.95. The solid solution range and evolution of the structure as a function of x is established and correlated with the broad range of magnetic behavior observed. The structure is shown to be tetragonal I4/mmm although is possibly cubic when x=0.95. For 0.67≤x≤0.9 the material shows antiferromagnetic long range order and ferromagnetic clusters. At x=0.95 the magnetic transition is at 120 K and the imaginary susceptibility becomes non-zero and the temperature of the cusp in the ac susceptibility shows a frequency dependence indicative of glassiness.     

Epitaxial growth and optical characterization of compound semiconductor β-FeSi2 prepared by pulsed laser deposition

β-FeSi₂ thin films were prepared on FZ n-Si (1 1 1) substrates by pulsed laser deposition (PLD). The structural properties and crystallographic orientation of the films were investigated by X-ray diffraction (XRD) analysis. This indicates that β-FeSi₂/Si (2 0 2/2 2 0) and the single-crystalline β-FeSi₂ can be prepared using PLD. In photoluminescence (PL) measurements at 8 K detected by Ge detector, the PL spectra of the samples annealed at 900 °C for 1, 5, 8 and 20 h showed that the PL intensity of the A-band peak increased depending on annealing time in comparison with those of as-deposited samples. The intrinsic PL intensity of the A-band peak at 0.808 eV of the β-FeSi₂ from the 20-h-annealed sample was investigated for the first time by the PLD method detected by an InGaAs detector. This result has been confirmed by temperature dependence and excitation power density of the 20-h-annealed sample with the comparison of other defect-related band peaks of the sample. Cross-sectional scanning electron microscopy (SEM) observation was also performed and the thickness of the thin films was found to be at 75 nm for 20-h-annealed. The thermal diffusion for the epitaxial growth of β−FeSi₂/Si was observed when the compositional ratio of Fe to Si was around Fe:Si=1:2 for 20-h-annealed carried out by energy dispersive X-ray spectroscopy (EDX). We discussed high crystal quality of the epitaxial growth and optical characterization of β-FeSi₂ achieved after annealing at 900 °C for 20 h.     

Epitaxial growth of La2Zr2O7 buffer layers for YBa2Cu3O7−δ coated conductors on metallic substrates using pulsed laser deposition

In the present work, La₂Zr₂O₇ (LZO) buffer layers were deposited using pulsed laser deposition (PLD) on various metallic substrates including epitaxial pure Ni on a LaAlO₃ (LAO) substrate as well as highly textured Ni–5 at.%W tapes. It is shown that the LZO deposited on pure Ni-buffered LAO exhibits a mixed orientation while LZO on Ni–5 at.%W grows epitaxially. This difference may be explained by the existence of a sulphur superstructure on the surface of Ni–5 at.%W tapes, promoting the epitaxial (0 0 l) nucleation of seed layers. Highly textured YBa₂Cu₃O_7?δ layers were prepared either by using a single buffer layer of LZO or bilayer buffers of CeO₂/LZO on Ni–5 at.%W. The superconducting transition temperature (T_c) increases with the LZO thickness, reaching a value of 90 K with a very narrow transition width (1.5 K) for 240 nm thick LZO layers. Inductive J_c measurements at 77 K in self-field show a value of about 0.96 MA/cm² for the thickest LZO layers, which is comparable to the value observed on standard buffer architectures such as CeO₂/YSZ/Y₂O₃.     

Influence of the substrate material on the properties of pulsed laser deposited thin Li1+xMn2O4−δ films

Thin Li_1+xMn₂O_4−δ films were deposited on several substrate materials (stainless steel, p-doped silicon and glassy carbon) by pulsed laser deposition. To obtain the correct thin film stoichiometries, targets with a different amount of excess lithium were required (Li_1.03Mn₂O₄ + xLi₂O; x = 2.5 and 7.5 mol%). The resulting polycrystalline thin films were characterized with respect to their morphology and electrochemical activity. It was found that only thin Li_1+xMn₂O_4−δ films deposited on stainless steel and glassy carbon showed the typical insertion and deinsertion peaks of Li⁺ during cycling.     

YBa2Cu3O7-δ薄膜热激发磁通蠕动研究

本文选择两块零电阻温度分别为82K和71K超导性能不同的薄膜样品,同步进行了电阻在外磁场中展宽的测量,并用Palstra所提出的Arrhenius定律研究两样品热激活能的差别。实验发现样品热激活能随磁场增加线性下降。由测量结果推出的不可逆线仍有B^*-(1-T^*/T_c)^3/2形式。 关键词：     

STUDY OF HALOGEN DOPING IN POLYCRYSTALLINE YBa2Cu3O7-δ

This paper presents systematically the doping effects of halogens in YBa₂Cu₃O_7-δ polycrystalline samples, with a series of concentrations of fluorine, chlorine, bromine or iodine. All samples were prepared by chemical method of citrate pyrolysis, which makes the halogen concentration in the samples more uniform. Samples doped with F have T_c as high as 94.5K, Cl, Br and I dopings also raise T_c to a certain extent. In addition, the influence of halogen doping on critical current density, morphology, constitution and so forth is discussed.     

Si doped Cu0.5Tl0.5Ba2Ca2Cu3O10−δ superconductors

The Si doped (Cu_0.5Tl_0.5)Ba₂Ca₂Cu_3−ySi_yO_10−δ (y=0, 0.25, 0.5, 0.75, 1.0, 1.25) superconductor samples have been synthesized to investigate the effect of mobile carriers on the critical temperature and magnitude of diamagnetism of this family of cuprates. The Si doped samples have tetragonal structure as observed from the X-ray diffraction spectra. The c-axis length of the unit cell of (Cu_0.5Tl_0.5)Ba₂Ca₂Cu_3−ySi_yO_10−δ was increased after the increase of Si concentration, whereas the critical temperature and the magnitude of diamagnetism have been decreased. The decrease in T_c(0) and magnitude of diamagnetism is possibly due to the deficiency of carriers in CuO₂/SiO₂ planes caused by the +4 state of Si atoms. However, the post-annealing of these samples in oxygen atmosphere has increased the critical temperature and the magnitude of diamagnetism. The FTIR absorption measurements of (Cu_0.5Tl_0.5)Ba₂Ca₂Cu_3−ySi_yO_10−δ samples have shown a softening of the apical oxygen mode of the type Cu(1)O_ACu(2) and TlO_ACu(2) with increased concentration of Si in the unit cell; the softening of this mode is directly linked with the increase in the c-axis lattice parameter of the (Cu_0.5Tl_0.5)Ba₂Ca₂Cu_3−ySi_yO_10−δ superconductor.     

YBa2Cu3O7-δ外延膜中的非线性光响应

实验结果表明，在连续波He-Ne激光(λ=0.63μm)照射下，YBa₂Cu₃O_7-δ(YBCO)外延膜在超导转变温度T_c以下附近温区的光响应行为，表现为辐射热效应和非辐射热效应同时存在，尤其当样品的R-T变化率dR/dT→0温区明显地表现为一种非平衡光响应行为，且随电流的变化呈非线性关系.基于上述实验事实，在光致准粒子激发假设下，对T_c附近YBCO薄膜中的非线性光响应机制进行了讨论；给出了光辐射 关键词：     

IRREVERSIBILITY LINE AND THERMAL DEPINNING IN YBa2Cu3O7-δ

By measuring magnetic torque moment in a field-sweeping process, the temperature and field dependence of the critical current density j (with a criterion of electric field) and the normalized relaxation rate Q = d lnj/d ln E of a YBa₂Cu₃O_7-δ thin film were obtained. With a minimum current density (j_min = 10A·cm^-2) the irreversibility lines at different sweeping rates were determined. It was found that these irreversibility lines cannot be fitted to either the melting line or the vortex-glass transition. All the data can be interpreted by the thermally-assisted-flux-flow model. Further investigation shows that, at irreversible tem-perature and field, U_c is much smaller than k_BT, which indicates that the thermal depinning is the real origin of the irreversibility line.