Thickness dependence on thermal stability of sputtered Ag nanolayer on Ti/Si(1 0 0)

Thermal stability of Ag layer on Ti coated Si substrate for different thicknesses of the Ag layer have been studied. To do this, after sputter-deposition of a 10 nm Ti buffer layer on the Si(1 0 0) substrate, an Ag layer with different thicknesses (150-5 nm) was sputtered on the buffer layer. Post annealing process of the samples was performed in an N₂ ambient at a flow rate of 200 ml/min in a temperature range from 500 to 700 °C for 30 min. The electrical property of the heat-treated multilayer with the different thicknesses of Ag layer was examined by four-point-probe sheet resistance measurement at the room temperature. Phase formation and crystallographic orientation of the silver layers were studied by θ-2θ X-ray diffraction analysis. The surface topography and morphology of the heat-treated films were determined by atomic force microscopy, and also, scanning electron microscopy. Four-point- probe electrical measurement showed no considerable variation of sheet resistance by reducing the thickness of the annealed Ag films down to 25 nm. Surface roughness of the Ag films with (1 1 1) preferred crystallographic orientation was much smaller than the film thickness, which is a necessary condition for nanometric contact layers. Therefore, we have shown that the Ag layers with suitable nano-thicknesses sputtered on 10 nm Ti buffer layer were thermally stable up to 700 °C.     

Thickness dependent stripe structure stability of Ag films on Si(1 1 1)-(4 × 1)-In substrate

The thickness dependent stripe structure stabilization of Ag films on Si(1 1 1)-(4 × 1)-In substrate is thermodynamically considered. It is found that for the stability of the structure, there is a competition between the sum of elastic energy and stacking fault energy in the film and the film-substrate interface energy. The presence of equilibrium of them leads to a critical film thickness. Beyond it, the stripe structure will transform into a flat one. Our prediction for n_c of Ag films shows reasonable agreement with experimental data. In addition, according to the established model, it is predicted that Au could also form the above stripe structure on this substrate with a similar n_c value of Ag.     

CO adsorption on epitaxially grown Pt layers on Ru(0 0 0 1)

The adsorption of CO on epitaxially grown Pt films of variable thickness has been studied using infrared-absorption spectroscopy, scanning tunnelling microscopy and thermal desorption spectroscopy. Depending on the number of pseudomorphic Pt layers (N_Pt = 1-4) the internal and external CO stretching modes (ν_C-O and ν_Pt-CO, respectively) display characteristic frequency shifts due to the vanishing influence of the underlying Ru(0 0 0 1) substrate and Pt/Ru interface. For thicker layers (N_Pt ? 5) when this influence has become negligible, the compressive stress within the Pt film is gradually relieved, leading to a dislocation network. The structural heterogeneity during the ongoing relaxation process of the Pt film is reflected in the ν_C-O line shape; no line broadening is observed for either pseudomorphic or very thick films (N_Pt ? 15). For N_Pt ? 3 the adsorption of CO on Pt/Ru(0 0 0 1) films closely resembles CO on Pt(1 1 1), with residual deviations in line position and desorption temperatures gradually converging to zero.     

Epitaxial growth of Co(0 0 0 1)hcp/Fe(1 1 0)bcc magnetic bi-layer films on SrTiO3(1 1 1) substrates

Co(0 0 0 1)_hcp/Fe(1 1 0)_bcc epitaxial magnetic bi-layer films were successfully prepared on SrTiO₃(1 1 1) substrates. The crystallographic properties of Co/Fe epitaxial magnetic bi-layer films were investigated. Fe(1 1 0)_bcc soft magnetic layer grew epitaxially on SrTiO₃(1 1 1) substrate with two type variants, Nishiyama–Wasserman and Kurdjumov–Sachs relationships. An hcp-Co single-crystal layer is obtained on Ru(0 0 0 1)_hcp interlayer, while hcp-Co layer formed on Au(1 1 1)_fcc or Ag(1 1 1)_fcc interlayer is strained and may involve fcc-Co phase. It has been shown possible to prepare Co/Fe epitaxial magnetic bi-layer films which can be usable for patterned media application.     

Electron and lattice structure of ultra thin Ag films on Si(1 1 1) and Si(0 0 1)

We studied the low temperature (T ? 130 K) growth of Ag on Si(0 0 1) and Si(1 1 1) flat surfaces prepared by Si homo epitaxy with the aim to achieve thin metallic films. The band structure and morphology of the Ag overlayers have been investigated by means of XPS, UPS, LEED, STM and STS. Surprisingly a (√3 × √3)R30° LEED structure for Ag films has been observed after deposition of 2-6 ML Ag onto a Si(1 1 1)(√3 × √3)R30°Ag surface at low temperatures. XPS investigations showed that these films are solid, and UPS measurements indicate that they are metallic. However, after closer STM studies we found that these films consists of sharp Ag islands and (√3 × √3)R30°Ag flat terraces in between. On Si(0 0 1) the low-temperature deposition yields an epitaxial growth of Ag on clean Si(0 0 1)-2 × 1 with a twinned Ag(1 1 1) structure at coverage’s as low as 10 ML. Furthermore the conductivity of few monolayer Ag films on Si(1 0 0) surfaces has been studied as a function of temperature (40-300 K).     

Au/TiO2/Ru(0 0 0 1) model catalysts and their interaction with CO

Au/TiO₂/Ru(0 0 0 1) model catalysts and their interaction with CO were investigated by scanning tunneling microscopy and different surface spectroscopies. Thin titanium oxide films were prepared by Ti deposition on Ru(0 0 0 1) in an O₂ atmosphere and subsequent annealing in O₂. By optimizing the conditions for deposition and post-treatment, smooth films were obtained either as fully oxidized TiO₂ or as partly reduced TiO_x, depending on the preparation conditions. CO adsorbed molecularly on both oxidized and reduced TiO₂, with slightly stronger bonding on the reduced films. Model catalyst surfaces were prepared by depositing submonolayer quantities of Au on the films and characterized by X-ray photoelectron spectroscopy and scanning tunneling microscopy. From X-ray photoelectron spectroscopy, a weak interaction between the Au and the TiO₂ substrate was found. At 100 K CO adsorption occurred on both the TiO₂ film and on the Au nanoparticles. CO desorbed from the Au particles with activation energies between 53 and 65 kJ/mol, depending on the Au coverage. If the Au deposit was annealed to 770 K prior to CO exposure, the CO adsorption energy decreased significantly. STM measurements revealed that the Au particles grow upon annealing, but are not encapsulated by TiO_x suboxides. The higher CO adsorption energy observed for smaller Au coverages and before annealing is attributed to a significantly stronger interaction of CO with mono- and bilayer Au islands, while for higher particles, the adsorption energy becomes more bulk-like. The implications of these effects on the known particle size effects in CO oxidation over supported Au/TiO₂ catalysts are discussed.     

Structures and stability of Ag clusters on Ag(1 1 1) and Ni(1 1 1) surfaces

The structures of the lowest total energy for small Ag_N clusters with N = 2-20, which are grown on Ag(1 1 1) and Ni(1 1 1) surfaces, have been determined using a combination of the embedded-atom method and the basin-hopping algorithm. It is found that the particularly stable Ag clusters with N<18 have similar geometries on both surfaces when comparing clusters of the same size. On the other hand, the geometries of the less stable Ag clusters in the same size range differ for the two surfaces. From N?18, the sizes of the particularly stable structures are different for the two different substrates. Due to the large size mismatch of the two types of atoms it is energetically unfavorable for Ag to form a pseudomorphic monolayer structures on Ni(1 1 1) and there is considerable strain produced at the interface. The effect of this strain and the increased adatom-substrate interactions lead to irregular and elongated structures of the adsorbed Ag clusters.     

Self-assembled germanium nano-clusters on silver(1 1 0)

The adsorption of germanium on Ag(1 1 0) has been investigated by scanning tunnelling microscopy (STM), as well as surface X-ray diffraction (SXRD). At 0.5 germanium monolayer (ML) coverage, Low Energy Electron Diffraction (LEED) patterns reveals a sharp c(4 × 2) superstructure. Based on STM images and SXRD measurements, we present an atomic model of the surface structure with Ge atoms forming tetramer nano-clusters perfectly assembled in a two-dimensional array over the silver top layer. The adsorption of the germanium atoms induces a weak perturbation of the Ag surface. Upon comparison with results obtained on the (1 1 1) and (1 0 0) faces, we stress the role played by the relative interactions between silver and germanium on the observed surface structures.     

Herringbone and triangular patterns of dislocations in Ag, Au, and AgAu alloy films on Ru(0 0 0 1)

We have studied the dislocation structures that occur in films of Ag, Au, and Ag_0.5Au_0.5 alloy on a Ru(0 0 0 1) substrate. Monolayer (ML) films form herringbone phases while films two or more layers thick contain triangular patterns of dislocations. We use scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED) to determine how the film composition affects the structure and periodicity of these ordered structures. One layer of Ag forms two different herringbone phases depending on the exact Ag coverage and temperature. Low-energy electron microscopy (LEEM) establishes that a reversible, first-order phase transition occurs between these two phases at a certain temperature. We critically compare our 1 ML Ag structures to conflicting results from an X-ray scattering study [H. Zajonz et al., Phys. Rev. B 67 (2003) 155417]. Unlike Ag, the herringbone phases of Au and AgAu alloy are independent of the exact film coverage. For two layer films in all three systems, none of the dislocations in the triangular networks thread into the second film layer. In all three systems, the in-plane atomic spacing of the second film layer is nearly the same as in the bulk. Film composition does, however, affect the details of the two layer structures. Ag and Au films form interconnected networks of dislocations, which we refer to as “trigons.” In 2 ML AgAu alloy, the dislocations form a different triangular network that shares features of both trigon and moiré structures. Yet another well-ordered structure, with square symmetry, forms at the boundaries of translational trigon domains in 2 ML Ag films but not in Au films.     

Surface morphology of epitaxial lattice-matched Ba0.7Sr0.3O on Si(0 0 1) and vicinal Si(0 0 1)-4°[1 1 0] substrates

Exploring ways for self-organized structuring of insulating thin films, we investigated the possibility to produce replicas of step trains, given by a vicinal Si(0 0 1)-4°[1 1 0] surface, in layers of crystalline and perfectly lattice-matched Ba_0.7Sr_0.3O. For this purpose, we carried out high-resolution spot profile analyses in low-energy electron diffraction (SPA-LEED) both on flat Si(0 0 1) and on Si(0 0 1)-4°[1 1 0]. Oxide layers were generated by evaporating the metals in oxygen ambient pressure with the sample at room temperature. Our G(S) analysis of these mixed oxide layers reveals a strong influence of local compositional fluctuations of Sr and Ba ions and their respective scattering phases, which appears as an unphysically large variation of layer distances. Nevertheless, we are able to show that quite smooth and closed oxide films are obtained with an rms roughness of about 1 ML. These Ba_0.7Sr_0.3O films directly follow the step train of Sr-modified vicinal Si surfaces that form (1 1 3) oriented facets after adsorption of a monolayer of Sr. This proves that self-organized structuring of insulating films can indeed be an effective method.     

Infrared reflection absorption spectroscopic study of the adsorption structures of dimethyl ether and methyl ethyl ether on Cu(1 1 1) and Ag(1 1 1)

Infrared reflection absorption (IRA) spectra measured for dimethyl ether (DME) adsorbed at 80 K on Cu(1 1 1) and Ag(1 1 1) give IR bands belonging only to the A₁ and B₂ species, indicating that the adsorbate takes on an orientation in which the C₂ axis bisecting the COC bond angle tilts away from the surface normal within the plane perpendicular to the substrates. The DFT method was applied to simulate the IRA spectra, indicating that the tilt angles of DME on Cu(1 1 1) and Ag(1 1 1) are about 50° and 55°, respectively, at submonolayer coverages. The results are in contrast to the case of DME on Cu(1 1 0) and Ag(1 1 0), where the C₂ axis is perpendicular to the substrates [T. Kiyohara et al., J. Phys. Chem. A 106 (2002) 3469]. Methyl ethyl ether (MEE) adsorbed at 80 K on Cu(1 1 1) gives IRA bands mainly ascribable to the gauche (G) form, whereas the IRA spectra measured for MEE on Ag(1 1 1) are characterized by the trans (T) form. The rotational isomers are identical with those on Cu(1 1 0) and Ag(1 1 0); i.e., MEE on Cu(1 1 0) takes the G form and the adsorbate on Ag(1 1 0) the T form [T. Kiyohara et al., J. Phys. Chem. B 107 (2003) 5008]. The simulation of the IRA spectra indicated that (i) the G form adsorbate on Cu(1 1 1) takes an orientation, in which the axis bisecting the COC bond angle tilts away from the surface normal by ca. 30° within the plane perpendicular to the surface to make the CH₃-CH₂ bond almost parallel to the surface, and (ii) the T form adsorbate on Ag(1 1 1) takes an orientation, in which the bisecting axis tilts away by ca. 60° from the surface normal within the perpendicular plane. Comparison of these adsorption structures of MEE on the (1 1 1) substrates with those of MEE on Cu(1 1 0) and Ag(1 1 0) indicates that the structures are mainly determined by a coordination interaction of the oxygen atom to the surface metals and an attractive van der Waals interaction between the ethyl group of MEE and the substrate surfaces. The coordination interaction plays an important role on Cu(1 1 1) and Cu(1 1 0), which makes the adsorbate on the Cu substrates to take the orientations with the bisecting axis near parallel to the surface normal and to assume the G form in order to make the ethyl group parallel to the surface, which is favorable for the van der Waals interaction. In the case of MEE on the Ag substrates the attractive van der Waals interaction plays a dominant role, resulting in the T form which is more favorable for the interaction than the G form.     

Growth and electronic properties of ultra-thin Ag films on Ni(1 1 1)

We studied the growth mode and electronic properties of ultra-thin silver films deposited on Ni(1 1 1) surface by means of scanning tunnelling microscopy (STM) and angle resolved photoemission spectroscopy (ARPES). The formation of the 4d-quantum well states (QWS) was analysed within the phase accumulation model (PAM). The electronic structure of the 1 ML film is consistent with the silver layer which very weakly interacts with the supporting surface. The line-shape analysis of Ag-4d_xz,yz QWS spectrum support the notion of strong localization of these states within the silver layer. The asymmetry of the photoemission peaks implies that the decay of the photo-hole appears to be influenced by the dynamics of the electrons in the supporting surface.     

Effect of C layer on the structures and magnetic properties of (0 0 1)-oriented [C/CoPt]n/Ag films

CoPt/Ag and [C/CoPt]n/Ag thin films have been prepared onto the glass substrates by magnetron sputtering. We investigated the evolution of texture and magnetic properties of CoPt/Ag and [C/CoPt]n/Ag films. The results show that C-doping plays an important role in improving (0 0 1) texture, improving the order parameter S, reducing the intergrain interactions, and making the magnetization reversal mechanism more close to Stoner-Wolfarth rotational mechanism. The growth mechanism of (0 0 1) texture also seems to be related strongly to the films thickness. Our results show that the highly (0 0 1)-oriented films with ordered fct phase have a significant potential for the perpendicular media of extremely high-density recording.     

Two-photon resonance in optical second harmonic generation from quantum well states in ultra-thin Ag films grown on Si(1 1 1) surfaces

We studied optical second harmonic generation (SHG) oscillations during the growth of Ag films on Si(1 1 1) 7 × 7 clean and H-terminated surfaces. In the growth on the 7 × 7 surfaces at room temperature, the second and third peaks of the oscillation shift towards the thinner side with an increase in pump photon energy. Our analysis revealed that these peaks are caused by two-photon resonant transitions from the n = 1 and 2 occupied quantum well states (QWSs) in the Ag film to the Ag/Si interface at 1.9 eV above the Fermi level (E_f). In Ag growth on the hydrogen-terminated surfaces, the SHG oscillation was similar to that on the 7 × 7 surfaces at room temperature. However, the QWS-related peak was suppressed in the growth at 300 °C. This is attributed to an inhibited intrusion of the interface state into the Ag layers.     

The investigation of room temperature ferromagnetism in (1 0 0) oriented BaNb2O6 PLD films on LaAlO3 (1 0 0) substrate

(1 0 0) oriented BaNb₂O₆ films have been successfully grown on LaAlO₃ (1 0 0) substrate at 750 °C or 450 °C in vacuum by pulsed laser deposition. The deposited BaNb₂O₆ PLD films exhibit room-temperature ferromagnetism. Ab initio calculations demonstrate that stoichiometric BaNb₂O₆ and that with barium vacancy are nonmagnetic, while oxygen and niobium vacancy can induce magnetism due to the spin-polarization of Nb s electrons and O p electrons respectively. Moreover, ferromagnetic coupling is energetically more favorable when two Nb/O vacancies are located third-nearest-neighbored. The observed room temperature ferromagnetism in BaNb₂O₆ films should be mainly induced by oxygen vacancies introduced during vacuum deposition, with certain contribution by Nb vacancies.     

Metal organic chemical vapor deposition of ultrathin ZrO2 films on Si(1 0 0) and Si(1 1 1) studied by electron spectroscopy

The growth of ultrathin ZrO₂ films on Si(1 0 0)-(2 × 1) and Si(1 1 1)-(7 × 7) has been studied with core level photoelectron spectroscopy and X-ray absorption spectroscopy. The films were deposited sequentially by chemical vapor deposition in ultra-high vacuum using zirconium tetra-tert-butoxide as precursor. Deposition of a > 50 Å thick film leads in both cases to tetragonal ZrO₂ (t-ZrO₂), whereas significant differences are found for thinner films. On Si(1 1 1)-(7 × 7) the local structure of t-ZrO₂ is not observed until a film thickness of 51 Å is reached. On Si(1 0 0)-(2 × 1) the local geometric structure of t-ZrO₂ is formed already at a film thickness of 11 Å. The higher tendency for the formation of t-ZrO₂ on Si(1 0 0) is discussed in terms of Zr-O valence electron matching to the number of dangling bonds per surface Si atom. The Zr-O hybridization within the ZrO₂ unit depends furthermore on the chemical composition of the surrounding. The precursor t-butoxy ligands undergo efficient C-O scission on Si(1 0 0), leaving carbonaceous fragments embedded in the interfacial layer. In contrast, after small deposits on Si(1 1 1) stable t-butoxy groups are found. These are consumed upon further deposition. Stable methyl and, possibly, also hydroxyl groups are found on both surfaces within a wide film thickness range.     

Influence of Co doping content on its valence state in Zn1−xCoxO (0 ≤ x ≤ 0.15) thin films

Zn_1−xCo_xO (0 ≤ x ≤ 0.15) thin films grown on Si (1 0 0) substrates were prepared by a sol-gel technique. The effects of Co doped on the structural, optical properties and surface chemical valence states of the Zn_1−xCo_xO (0 ≤ x ≤ 0.15) films were investigated by X-ray diffraction (XRD), ultraviolet-visible spectrometer and X-ray photoelectron spectroscopy (XPS). XRD results show that the Zn_1−xCo_xO films retained a hexagonal crystal structure of ZnO with better c-axis preferred orientation compared to the undoped ZnO films. The optical absorption spectra suggest that the optical band-gap of the Zn_1−xCo_xO thin films varied from 3.26 to 2.79 eV with increasing Co content from x = 0 to x = 0.15. XPS studies show the possible oxidation states of Co in Zn_1−xCo_xO (0 ≤ x ≤ 0.05), Zn_0.90Co_0.10O and Zn_0.85Co_0.15O are CoO, Co₃O₄ and Co₂O₃, with an increase of Co content, respectively.     

Structural and magnetic properties of evaporated Fe thin films on Si(1 1 1), Si(1 0 0) and glass substrates

We present experimental results on the structural and magnetic properties of series of Fe thin films evaporated onto Si(1 1 1), Si(1 0 0) and glass substrates. The Fe thickness, t, ranges from 6 to110 nm. X-ray diffraction (XRD) and atomic force microscopy (AFM) have been used to study the structure and surface morphology of these films. The magnetic properties were investigated by means of the Brillouin light scattering (BLS) and magnetic force microscopy (MFM) techniques. The Fe films grow with (1 1 0) texture; as t increases, this (1 1 0) texture becomes weaker for Fe/Si, while for Fe/glass, the texture changes from (1 1 0) to (2 1 1). Grains are larger in Fe/Si than in Fe/glass. The effective magnetization, 4πM_eff, inferred from BLS was found to be lower than the 4πM_S bulk value. Stress induced anisotropy might be in part responsible for this difference. MFM images reveal stripe domain structure for the 110 nm thick Fe/Si(1 0 0) only.     

Effect of annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films on sapphire (0 0 0 1) substrates by magnetron sputtering

ZnO thin films were epitaxially grown on sapphire (0 0 0 1) substrates by radio frequency magnetron sputtering. ZnO thin films were then annealed at different temperatures in air and in various atmospheres at 800 °C, respectively. The effect of the annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films are investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL). A strong (0 0 2) diffraction peak of all ZnO thin films shows a polycrystalline hexagonal wurtzite structure and high preferential c-axis orientation. XRD and AFM results reveal that the better structural quality, relatively smaller tensile stress, smooth, uniform of ZnO thin films were obtained when annealed at 800 °C in N₂. Room temperature PL spectrum can be divided into the UV emission and the Visible broad band emission. The UV emission can be attributed to the near band edge emission (NBE) and the Visible broad band emission can be ascribed to the deep level emissions (DLE). By analyzing our experimental results, we recommend that the deep-level emission correspond to oxygen vacancy (V_O) and interstitial oxygen (O_i). The biggest ratio of the PL intensity of UV emission to that of visible emission (I_NBE/I_DLE) is observed from ZnO thin films annealed at 800 °C in N₂. Therefore, we suggest that annealing temperature of 800 °C and annealing atmosphere of N₂ are the most suitable annealing conditions for obtaining high quality ZnO thin films with good luminescence performance.     

Stranski-Krastanov like oxide growth on Ag(1 1 1) at atmospheric oxygen pressures

The oxidation behavior of Ag(1 1 1) was studied by means of in situ surface X-ray diffraction at atmospheric oxygen pressure. Exposure to 1 bar oxygen at 773 K reveals a competing growth of three different oxygen-induced structures on Ag(1 1 1), namely the well-known p(4 × 4) reconstruction, a surface oxide in a p(7 × 7) coincidence structure and the bulk oxide Ag₂O in orientation. The latter two exhibit the same honeycomb on hexagon arrangement of the Ag sublattice with respect to the Ag(1 1 1) surface. An inverted stacking of Ag planes in the bulk oxide islands is observed as compared to the Ag(1 1 1) substrate, which sheds new light on the Ag₂O formation process. Finally, we present a structural model of the p(7 × 7) reconstruction, based on a three-layer O-Ag-O slab of Ag₂O(1 1 1).