Laser damage mechanism of porous Al2O3 films prepared by a two-step anodization method

Pure aluminum films were deposited on a B270 glass by electron beam evaporation technique. These aluminum films, which were used as anode, were put in sulfuric acid and oxalic acid to prepare porous alumina films using a two-step anodization method. The microstructure and laser damage characteristics of the alumina films were then tested. Results show that the microstructure of the alumina films formed in sulfuric acid and oxalic acid were vertical (cylindrical) pores with different diameters. The laser-damaged spot of the porous films was formed by innumerable small damaged pits with no mutual influence. Films prepared in different acids reveal different damage characteristics and reflect different mechanisms.     

Laser-induced damage characteristic of porous alumina optical films

Pure aluminum films were deposited on B270 glass by electron beam evaporation technique. The aluminum films, which were used as anode, were placed in phosphoric acid to prepare porous alumina films using a two-step anodization method. They were subsequently annealed in high temperature to improve transmission. The microstructure, transmitted spectrum and laser damage characteristics of the alumina films were then tested. Their microstructure formed in phosphoric acid was retiform. The transmissivity can be increased efficiently if the annealing temperature is adequately high. The laser-damaged spots of the porous films were formed by innumerable small damaged pits with no mutual effect. In contrast, the laser-damaged spots of the compact films were formed by several larger damaged pits which acted together toward expansion. The damage process of the porous films comprised heat ablation and stress fracture.     

Surfactant-assisted synthesis of Ag nanostructures and their self-assembled films on copper and aluminum substrate

In this paper, silver nanostructures with controlled morphologies, such as plates, rods, belts, sheets and their self-assembled films have been prepared on copper and aluminum substrates by a surfactant-assisted colloidal chemical method. The X-ray powder diffraction (XRD) and the selected area electron diffraction (SAED) patterns indicated that the Ag nanostructures grew on the substrates with cubic symmetry and single-crystalline in nature. An oriented attachment with surfactant-assisted mechanism and a cooperative effect of surfactant and chloride ion on the morphology of Ag nanostructures were investigated systematically and synthetically.     

Formation of linear polyenes in poly(vinyl alcohol) films catalyzed by phosphotungstic acid,aluminum chloride,and hydrochloric acid

Formation of linear polyenes–(CH=CH)_n–via acid-catalyzed thermal dehydration of polyvinyl alcohol in 9- to 40-µm-thick films of this polymer containing hydrochloric acid, aluminum chloride, and phosphotungstic acid as dehydration catalysts was studied by electronic absorption spectroscopy. The concentration of long-chain (n ≥ 8) polyenes in films containing phosphotungstic acid is found to monotonically increase with the duration of thermal treatment of films, although the kinetics of this process is independent of film thickness. In films containing hydrochloric acid and aluminum chloride, the formation rate of polyenes with n ≥ 8 rapidly drops as film thickness decreases and the annealing time increases. As a result, at a film thickness of less than 10–12 µm, long-chain polyenes are not formed at all in these films no matter how long thermal duration is. The reason for this behavior is that hydrochloric acid catalyzing polymer dehydration in these films evaporates from the films during thermal treatment, the evaporation rate inversely depending on film thickness.     

Effect of the current density on the volume expansion of the deposited thin films of aluminum during porous oxide formation

The effect of the anodic current density, temperature and concentration of the oxalic acid on the volume expansion of porous alumina films formed from 1.8 μm thick aluminum films has been investigated. The volume expansion of the aluminum during oxidation was determined by the step height between the aluminum surface and the porous alumina surface at the edge of the anodized region, which was measured with a mechanical profiler with computer signal processing. Experiments showed, that the volume expansion factor as well as the cell dimensions is proportional to the anodizing voltage. The dependence of the volume expansion factor (k) on the anodizing voltage (U) has the linear nature. The volume expansion factor in the 4% solution of oxalic acid can be defined by the following equation: k=1.092+0.007U. It was established, that the dependence of the logarithm of the ion current density on the inverse volume expansion factor of porous alumina has the linear nature.     

Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.     

Al_2O_3杂化聚酰亚胺薄膜Al含量测试方法研究

无机粒子杂化聚酰亚胺(PI)薄膜具有优良的耐电晕特性,广泛用于变频电机中,文章首先用偶联剂处理过的超细氧化铝粉掺杂聚酰胺酸(PAA)制备了不同氧化铝含量的聚酰亚胺杂化膜.通过傅里叶变换红外光谱(FTIR)、X射线光电子能谱(XPS)、电感耦合等离子发射光谱(ICP)、重量法、热失重(TG/空气气氛)等测试方法对制备的不同Al2O3含量杂化聚酰亚胺薄膜的无机成分进行了定性和定量分析.结果表明:FTIR和XPS能很好地对杂化膜进行定性分析,FTIR主要对材料的结构进行分析从而推断出其可能的成分,而XPS则主要得到材料所含各元素信息,它具有操作简单,重复性好等优点;通过研究内层电子结合能及其氧化态的变化,XPS可以鉴别元素种类和价态、测定元素的相对含量.XPS和TG的实测值和理论值相差较大,相对标准偏差(RSD)很大,其中,XPS的RSD值大于5.0%,而TG的RSD值也都大于2.0%,只能对杂化膜进行半定量分析.而ICP和重量法的实测值和理论值相差较小且相对标准偏差(RSD)很小,它们的RSD)值均小于1.0%,能进行精确的定量分析,其中重量法的实测值最接近理论值,但只能用于单一无机组分的分析;而ICP法最精确且可以对多无机组分的复合物进行分析,它有简便、快速、灵敏度高、准确性好、可多元素同时测定,且对环境污染小等优点.由上面的结论可以得到一种分析复合材料中的无机成分的方法:首先,用FTIR和XPS对复合材料进行定性分析;然后,以XPS半定量分析结果作为参考,用重量法(单一组分)和ICP法对复合材料进行精确的定量分析.     

纳米多孔金薄膜显微结构分析

 采用亚硫酸金钠为主盐,在阳极氧化铝模板上进行了化学镀和电镀金实验研究。通过扫描电子显微镜和X射线衍射分析测试表明:采用以上两种方法均能制备出纳米多孔金薄膜。两种方法制备的多孔金薄膜微观结构存在较大的差异。化学镀制备的多孔金薄膜微观上是枝晶状的,电镀制备的多孔金薄膜微观上由纳米线构成。     

纳米多孔金薄膜显微结构分析

采用亚硫酸金钠为主盐,在阳极氧化铝模板上进行了化学镀和电镀金实验研究。通过扫描电子显微镜和X射线衍射分析测试表明:采用以上两种方法均能制备出纳米多孔金薄膜。两种方法制备的多孔金薄膜微观结构存在较大的差异。化学镀制备的多孔金薄膜微观上是枝晶状的,电镀制备的多孔金薄膜微观上由纳米线构成。     

粉末靶制备的AZO/Ag/AZO透明导电薄膜的光电性能

室温下,采用射频磁控溅射AZO粉末靶和Ag靶在玻璃基底上制备Ag层厚度分别为12 nm和15 nm两组对称结构掺铝氧化锌/银/掺铝氧化锌(AZO/Ag/AZO)透明导电薄膜,研究了Ag层和AZO层厚度对薄膜光电性能的影响。结果表明:3层薄膜的可见光区平均透光率达到了80%,550 nm处的最高透过率达到了88%,方块电阻小于5 Ω/□。Ag层厚度是影响AZO/Ag/AZO薄膜光电性能的主要因素,AZO层的厚度对薄膜光学性能影响较大。     

Wide band gap Cd0.83Mg0.15Al0.02O thin films by pulsed laser deposition

Magnesium and aluminum doped CdO thin films were deposited on quartz substrate using pulsed laser deposition technique. Magnesium is used to widen the band gap and aluminum is used to increase carrier concentration of CdO films. The effect of growth temperature on structural, optical, and electrical properties was studied. These films are crystalline in nature and their preferred orientation depends on growth temperature. These films are highly transparent (∼86%) in visible region. The band gap of the films varies from 3.1 eV to 3.4 eV. The electrical conductivity and carrier concentration were found to decrease with increase in growth temperature.     

Structural and optical properties study of nanocrystalline Si (nc-Si) thin films deposited on porous aluminum by plasma enhanced chemical vapor deposition

In this paper we report detail investigation and correlation between micro-structural and optical properties of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous aluminum structure. The influence of the microstructure of the nc-Si thin films on their optical properties was investigated through an extensive characterization. The effect of anodisation currents on the microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM) and transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). The optical constants (n and k as a function of wavelength) of the films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The silicon layer (SL) was modeled as a mixture of void, crystalline silicon and aluminum using the Bruggeman approximation. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties. A very bright photoluminescence (PL) was obtained and find to depend on anodisation current.     

Electrodeposition of diamond-like amorphous carbon films on aluminum from acetonitrile

Diamond-like carbon (DLC) films were electrodeposited on aluminum from acetonitrile with a pulse-modulated power at room temperature. The films were grey with 1 7m in thickness. The resistivity of the films was of the order of 10⁷ Q cm The films were characterized by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. XPS shows that the main composition of the films is carbon. Raman spectra indicate that typical DLC films were formed when high potential (>800 V) was applied.     

Luminescence properties of anodic aluminum oxide films with organic luminophores embedded into pores

Luminescence properties of porous anodic aluminum oxide films formed in a 0.6 M solution of citric acid and luminescence of paraterphenyl, perylene, coumarin 7, and rhodamine 6G dyes adsorbed by the films are investigated. The nature of emitting centers in anodic aluminum oxide is revealed. Intense photoluminescence of all tested dyes embedded into pores of anodic aluminum oxide has been found. A redshift of fluorescence spectra of dyes adsorbed by the matrix and emergence of an additional longwave band have been detected. Data obtained can be used in developing new thin-film luminescent coatings for future applications in optoelectronics and molecular electronics. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No 4, pp. 483–488, July–August, 1997.     

Doping and photoelectric properties of C60 films prepared by ionized cluster beam deposition

60 films by means of ionized cluster beam (ICB) deposition. X-ray diffraction (XRD) measurement showed the C₆₀ films to be polycrystalline. The films show negative resistance–temperature coefficients, and their room-temperature resistivity is greater than 10² Ω cm. The films were implanted with 80-keV phosphorus, BBr₃, Ar, and He ions, under doses ranging up to 10¹⁶ cm^-2. The resistivity of the implanted films decreases with increasing doses. n-type electrical conduction was observed for phosphorus-implanted C₆₀ films. The interaction of impinging ions with C₆₀ clusters was found to force the C₆₀ molecules to disintegrate and the films to amorphize. p-type conduction was observed for the C₆₀ films doped with aluminum by simultaneously sputtering aluminum during deposition. C₆₀/Si structures show heterojunction characteristics that can be influenced by light illumination. The photoelectric properties of the films were found to be improved by doping with aluminum. Received: 12 January 1998/Accepted: 24 March 1998     

Investigation of the thermal conductivity of diamond film on aluminum nitride ceramic

Diamond films were successfully synthesized on aluminum nitride(AlN) ceramic substrates by hot-filament chemical vapor deposition (HFCVD) method. The thermal conductivity of the diamond film/aluminum nitride ceramic (DF/AlN) composites was studied by photothermal deflection (PTD) technique. It has reached 2.04 W/cm K, 73% greater than that of AlN ceramic. Compared with the measurement of scanning electron microscopy (SEM) and Raman spectroscopy, the influence of diamond films on the thermal conductivity of the composites was pointed out. The adhesion and the stresses were also studied. The unusual stability and very good adhesion of the diamond film on AlN ceramic substrate obtained is attributed to the formation of aluminum carbide. Received: 24 March 1998 / Accepted: 8 March 1999 / Published online: 5 May 1999     

Formation process of a strong water-repellent alumina surface by the sol-gel method

A novel strong water-repellent alumina thin film is fabricated by chemically adsorbing stearic acid (STA) layer onto the porous and roughened aluminum film coated with polyethyleneimine (PEI). The formation process and the structure of the strong water-repellent alumina film are investigated by means of contact angle measurement and atomic force microscope (AFM). Results show that the water contact angles for the alumina films increase with the increase of the immersion time in the boiling water, and meanwhile, the roughness of the alumina films increases with the dissolution of the boehmite in the boiling water. Finally, the strong water-repellent film with a high water contact angle of 139.1° is obtained when the alumina films have distinct roughened morphology with some papillary peaks and porous structure. Moreover, both the roughened structure and the hydrophobic materials of the STA endow the alumina films with the strong water-repellence.     

Influence of various thickness metallic interlayers on opto-electric and mechanical properties of AZO thin films on PET substrates

Various thickness metallic interlayers to improve the opto-electric and mechanical properties of aluminum-doped zinc oxide (AZO) thin films deposited on flexible polyethylene terephtalate (PET) substrates are studied. The effects of the interlayers on the resistance and transmittance of the AZO thin films are discussed. The result shows that the metallic interlayers effectively improve the electric resistance but reduce the optical transmittance of the AZO thin films. These phenomena become more obvious as the interlayer thickness increases. However, the AZO with an aluminum interlayer still behaves an acceptable transmittance. Moreover, mechanical tests indicate that the aluminum interlayer increases the hardness and modulus, and reduce the residual stress of the AZO thin films. In contrast, the silver and copper interlayers decrease the AZO's mechanical properties. Comparing to those without any interlayer, the results show that the best interlayer is the 6 nm thick aluminum film.     

Bulge deformation measurement and elastic modulus analysis of nanoporous alumina membrane using time sequence speckle pattern interferometry

Nanoporous alumina membranes containing parallel regular pores of uniform size and normal to substrate surface were fabricated by anodically oxidizing high purity aluminum foils in acid solutions. The continuous out-of-plane displacement and current load of the porous membranes were obtained through bulge test combining time sequence speckle pattern interferometry (TSSPI) observation system. Then the deformation of whole field under different loads was deduced through point-to-point scan analysis and the elastic modulus was calculated through an analytical model. Measurement of mechanical properties indicates unusual mechanical behavior of these anodic alumina films compared with bulk alumina materials or dense alumina films. This method is useful and convenient for mechanical test on membranes with such structure and bring further understanding on connecting of micro–meso structure and mechanical properties.     

Impurity-defect structure of anodic aluminum oxide produced by two-sided anodizing in tartaric acid

Porous aluminum oxide is prepared in a 0.4 M aqueous solution of tartaric acid by two-sided anodizing. Fourier Transform IR spectroscopy (FTIR) data reveal the presence, in the alumina, of unoxidized tartarate ions, as well as products of their partial (radical organic products and CO) and complete (CO₂) oxidation. Carboxylate ions and elemental carbon contained in the anodic oxide impart a gray color to the films.