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《发光学报》2017,(7)
以紫外臭氧处理超薄Ag复合MoO_3或PEDOT∶PSS修饰ITO电极的高效柔性有机太阳能电池。通过优化紫外臭氧处理Ag薄膜的时间,提高了以P3HT∶PCBM为有源层的器件的功率转换效率,从1.68%(未经过紫外臭氧处理)提高到2.57%(紫外臭氧处理Ag 1 min)。提高的原因推测是紫外臭氧处理形成了AgO_x薄膜,提高了电荷提取并使器件具有高光学透明度、低串联电阻和优异的表面功函数等一些性能。并且,紫外臭氧处理Ag薄膜与MoO_3或者PEDOT∶PSS复合修饰ITO的器件效率分别得到提高,Ag薄膜与MoO_3复合修饰ITO的器件效率从2.02%(PET/ITO/MoO_3)提高到2.97%(PET/ITO/AgO x/MoO_3),Ag薄膜与PEDOT∶PSS复合修饰ITO的器件效率从2.01%(PET/ITO/PEDOT∶PSS)提高到2.93%(PET/ITO/AgO x/PEDOT∶PSS)。此外,以PBDTTT-EFT∶PC71BM为有源层的柔性聚合物太阳能电池效率可达6.21%。基于ITO的柔性光电器件效率的提高主要归于ITO被Ag/PEDOT∶PSS或Ag/MoO_3修饰后功函数的提高。 相似文献
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以紫外臭氧处理超薄Ag复合MoO3或PEDOT:PSS修饰ITO电极的高效柔性有机太阳能电池。通过优化紫外臭氧处理Ag薄膜的时间,提高了以P3HT:PCBM为有源层的器件的功率转换效率,从1.68%(未经过紫外臭氧处理)提高到2.57%(紫外臭氧处理Ag 1 min)。提高的原因推测是紫外臭氧处理形成了AgOx薄膜,提高了电荷提取并使器件具有高光学透明度、低串联电阻和优异的表面功函数等一些性能。并且,紫外臭氧处理Ag薄膜与MoO3或者PEDOT:PSS复合修饰ITO的器件效率分别得到提高,Ag薄膜与MoO3复合修饰ITO的器件效率从2.02%(PET/ITO/MoO3)提高到2.97%(PET/ITO/AgOx/MoO3),Ag薄膜与PEDOT:PSS复合修饰ITO的器件效率从2.01%(PET/ITO/PEDOT:PSS)提高到2.93%(PET/ITO/AgOx/PEDOT:PSS)。此外,以PBDTTT-EFT:PC71BM为有源层的柔性聚合物太阳能电池效率可达6.21%。基于ITO的柔性光电器件效率的提高主要归于ITO被Ag/PEDOT:PSS或Ag/MoO3修饰后功函数的提高。 相似文献
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采用磁控溅射方法在ITO表面沉积了不同厚度的ZnS超薄膜作为有机发光二极管(OLEDs)的缓冲层,使典型结构(ITO/TPD/Alq3/Al)的OLEDs的发光性能得到改善。ZnS缓冲层厚度对器件性能影响的实验结果表明,当ZnS缓冲层厚度为5nm时,器件电流密度提高了近2倍,亮度提高了2倍;当ZnS缓冲层厚度为10nm时,器件发光的电流效率提高18%,器件的性能得到改善。宽禁带的ZnS缓冲层对空穴从阳极到有机功能层的注入有阻碍作用,促进器件载流子平衡,提高了器件发光效率,改善了器件性能。 相似文献
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研究了等离子体刻蚀AlN缓冲层对硅衬底N极性n-GaN表面粗化行为的影响. 实验结果表明, 表面AlN缓冲层的状态对N极性n-GaN的粗化行为影响很大, 采用等离子体刻蚀去除一部分表面AlN缓冲层即可以有效提高N极性n-GaN在KOH溶液中的粗化效果, AlN缓冲层未经任何刻蚀处理的样品粗化速度过慢, 被刻蚀完全去除AlN缓冲层的样品容易出现粗化过头的现象. 经X射线光电子能谱分析可知, 等离子体刻蚀能够提高样品表面AlN缓冲层Al 2p的电子结合能, 使得样品表面费米能级向导带底靠近, 原子含量测试表明样品表面产生了大量的N空位, N空位提供电子, 使得材料表面费米能级升高, 这降低了KOH溶液和样品表面之间的肖特基势垒, 从而有利于表面粗化的进行. 通过等离子体刻蚀掉表面部分AlN缓冲层, 改善了N极性n-GaN在KOH溶液中的粗化效果, 明显提升了对应发光二级管器件的出光功率. 相似文献
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为了提高以TADF材料作为主体、天蓝色荧光材料作为客体的混合薄膜的OLED器件光电性能,我们调整了器件结构,使主体材料发挥其优势。制备了基本结构为ITO/NPB(40 nm)/DMAC-DPS∶x%BUBD-1(40 nm)/Bphen(30 nm)/LiF(0.5 nm)/Al的OLED器件。研究了主-客体材料在不同掺杂浓度下的OLED器件的光电特性。为了提高主体材料的利用率,在空穴传输层和发光层之间加入10 nm的DMAC-DPS作为间隔层;然后,在阳极和空穴传输层之间加入HAT-CN作为空穴注入层,形成HAT-CN/NPB结构的PN结,有效降低了器件的启亮电压(2.7 V)。测量了有无HAT-CN的单空穴器件的阻抗谱。结果表明,在最佳掺杂比例(2%)下,器件的外量子效率(EQE)达到4.92%,接近荧光OLED的EQE理论极限值;加入10 nm的DMAC-DPS作为间隔层,使得器件的EQE达到5.37%;HAT-CN/NPB结构的PN结有效地降低了器件的启亮电压(2.7 V),将OLED器件的EQE提高到5.76%;HAT-CN的加入提高了器件的空穴迁移率,降低了单空穴器件的阻抗。TADF材料作为主体材料在提高OLED器件的光电性能方面具有很大的潜力。 相似文献
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《光学学报》2017,(4)
采用溶液旋涂法在铟锡氧化物(ITO)电极上制备氧化石墨烯(GO)薄膜作为有机太阳能电池(OPVs)的空穴传输层,通过调控旋涂转速优化了氧化石墨烯薄膜的厚度并研究了膜厚对于器件性能的影响规律。在此基础上,通过紫外臭氧(UVO)处理和热处理等方法进一步提升电池器件的性能。结果表明:在紫外臭氧处理和热处理温度为250℃时,所得电池器件的效率最优,达到3.16%,接近于使用经典聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸(PEDOT:PSS)材料的电池器件水平。这一结果表明具有低成本、可溶液加工以及优异的光透过性等特点的氧化石墨烯会成为一种未来非常有前景的有机太阳能电池的空穴传输层材料。 相似文献
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空穴注入层对蓝色有机电致发光器件性能的影响 总被引:1,自引:0,他引:1
以DPVBi为发光层,NPB为空穴传输层,在阳极ITO和NPB之间分别插入不同的空穴注入层CuPc和PEDOT:PSS,制备了两种结构的蓝色有机电致发光器件(OLEDs):ITO/CuPc/NPB/DPVBi/BCP/Alq3/Al和ITO/PEDOT:PSS/NPB/DPVBi/BCP/Alq3/Al,研究了不同空穴注入材料对蓝色OLEDs发光性能的影响,并与没有空穴注入层的器件进行了比较.其中CuPc分别采用旋涂和真空蒸镀两种丁艺,比较了不同成膜工艺对器件发光特性的影响.结果表明:加入空穴注入层的器件比没有空穴注入层器件性能要好,其中插入水溶性CuPc的器件,其发光亮度和效率虽然比蒸镀CuPc器件要低,但比插入PEDOT:PSS 器件发光性能要好.又由于水溶性CuPc采用旋涂工艺成膜,与传统CuPc相比,制备工艺简单,所以为一种不错的空穴注入材料. 相似文献
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UV-ozone-treated MoO_3 as the hole-collecting buffer layer for high-efficiency solution-processed SQ:PC_(71) BM photovoltaic devices
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The enhanced performance of a squaraine compound, with 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine as the donor and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) as the acceptor, in solution-processed or- ganic photovoltaic devices is obtained by using UV-ozone-treated MoO3 as the hole-collecting buffer layer. The optimized thickness of the MoO3 layer is 8 nm, at which the device shows the best power conversion efficiency (PCE) among all devices, resulting from a balance of optical absorption and charge transport. After being treated by UV-ozone for 10 min, the transmittance of the MoO3 film is almost unchanged. Atomic force microscopy results show that the treated surface morphology is improved. A high PCE of 3.99% under AM 1.5 G illumination (100 mW/cm2) is obtained. 相似文献
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以B 3 PyMPM∶Cs/Al/HAT-CN作为电荷生成单元制备高效叠层绿色磷光有机电致发光器件,叠层器件的最大电流效率和最大流明效率分别为172.2 cd/A和111.0 lm/W,在5 mA/cm^2电流密度下,叠层器件的电压和亮度分别为传统器件的2.04倍和2.84倍.为了探究叠层器件性能优于传统器件的原因,研究了电荷生成单元内的电荷产生和注入过程,以及薄层铝对电子注入特性和电荷生成单元稳定性的影响.实验结果表明,电荷能够有效地在电荷生成单元内产生并顺利注入电子传输层中,B3PyMPM∶Cs和HAT-CN间Al薄层的插入能够进一步提高电子注入效率及器件结构的稳定性. 相似文献
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In this paper, bulk heterojunction photovoltaic devices based on the poly[2-methoxy-5-(3′,7′-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV):Bi2S3 nanorods hybrid material were present. To optimize the performance of the devices, the interface modification of the hybrid material that has a significant impact on the exciton dissociation efficiency was studied. An improvement in the device performance was achieved by modifying the Bi2S3 surface with a thin dye layer. Moreover, modifying the Bi2S3 surface with anthracene-9-carboxylic acid can enhance the performance further. Compared with the solar cells with Bi2S3 nanorods hybrid with the MDMO-PPV as the active layer, the anthracene-9-carboxylic acid modified devices are better in performance, with the power conversion efficiency higher by about one order in magnitude. 相似文献
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制作了一种新型绿色磷光有机电致发光二极管。器件结构为ITO/HAT-CN(x nm)/MoO3(30 nm)/NPB(40 nm)/TCTA(10 nm)/CPB∶GIr1(30 nm,14%)/BCP(10 nm)/Alq3(25 nm)/LiF(1 nm)/Al(100 nm),其中X=0,8,10,12,14,15 nm。电流密度-电压-亮度特性表明该结构有利于降低驱动电压和增加器件亮度。当HAT-CN厚度为12 nm时,器件的最高亮度可以达到32 480 cd/m2,起亮电压为3.5 V左右,发光效率为24.2cd/A。所设计的空穴型器件证明该器件结构具有很好的空穴注入和传输特性。 相似文献
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Scalable bottom‐up assembly of suspended carbon nanotube and graphene devices by dielectrophoresis
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Antonios Oikonomou Nick Clark Sebastian Heeg Andrey Kretinin Sarah Varey Geliang Yu Aravind Vijayaraghavan 《固体物理学:研究快报》2015,9(9):539-543
Bottom‐up assembly by dielectrophoresis (DEP) has emerged in recent years as a viable alternative to conventional top–down fabrication of electronic devices from nanomaterials, particularly carbon nanotubes and graphene. Here, we demonstrate how this technique can be extended to fabricate devices containing carbon nanotubes and graphene suspended between two electrodes over a back‐gate electrode. The suspended device geometry is critical for the development of nano‐electromechanical devices and to extract maximum performance out of electronic and optoelectronic devices. This technique allows for parallel assembly of devices over large scale. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
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Wang Y Niu Q Hu C Wang W He M Zhang Y Li S Zhao L Wang X Xu J Zhu Q Chen S 《Optics letters》2011,36(8):1521-1523
In order to promote a polymer LED (PLED), we fabricated and introduced an ultrathin nickel oxide (NiO) buffer layer (<10 nm) between the indium tin oxide (ITO) anode and the poly (3, 4-ethylenedioxythiophene) hole injection layer in the PLED. The NiO buffer layer was easily formed on the ITO anode by electron-beam deposition of a nickel (Ni) metal source and an oxygen plasma treatment process. As a result, the PLED device with the NiO buffer layer on its ITO anode had the same turn-on voltage as conventional PLED devices without the NiO buffer layer, and the luminance of the PLED device with the NiO buffer layer was doubled, compared with the conventional PLED devices without the NiO buffer layer. Improvement of the optoelectronic performance of the PLED can be attributed to the increase of the current driven into the diode, resulting from the NiO buffer layer, which can enhance the hole injection and balance the injection of the two types of carriers (holes and electrons). Thus it is an excellent choice to introduce the NiO buffer layer onto the ITO anode of the PLED devices in order to enhance the optoelectronic performance of PLED devices. 相似文献
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Byungjin Cho Kyu Hyun Nam Sunghoon SongYongsung Ji Gun-Young Jung Takhee Lee 《Current Applied Physics》2012,12(3):940-944
We demonstrate the application of conventional photolithography to fabricate organic memory devices in an array structure with a cell area of 4 × 4 μm2 without damaging the underlying organic memory layer. Applying photolithography to organic electronic devices is not trivial because the solvents used during lithography may dissolve and damage the previously coated organic layers. The application of photolithography to our organic devices was possible because of the introduction of polymethyl methacrylate (PMMA)/polyvinyl alcohol (PVA) onto the memory active layer, where PMMA functions as a buffer layer to prevent dissolution of the PVA layer during developing process, and PVA acts as a striped layer during metal lift-off process. Embedded Al bottom electrodes were particularly constructed to minimize the switching failure. The completed organic memory devices exhibited typical unipolar switching behavior and excellent memory performance in terms of their statistical memory parameters (ON and OFF currents and threshold voltages), ON/OFF ratio (>102), endurance (>230 cycles), and retention (>104 s). This convenient photolithography patterning technique is applicable for the further scaling of many types of organic devices. 相似文献