金刚石膜α粒子探测器的电学性能研究

从外加偏压、预辐照处理等方面对三明治结构金刚石膜探测器在α粒子辐照下的电学性能进行了研究.电流-电压特性和脉冲高度分布测试和分析表明，金刚石膜探测器在能量为5.5MeV的²⁴¹Am α粒子辐照一定时间后，其暗电流有所增加.探测器顶电极施加负偏压时，在α粒子辐照下得到的净电流和信噪比均较大.Raman光谱测试表明，造成上述现象的原因很可能是金刚石膜厚度方向的不均匀性分布.负偏压下探测器对α粒子的能量分辨率为25.0%，优于正偏压下的能量分辨率(38.4%).随着α粒子辐照时间的延长，探测器的净电流和电荷收集效率均有明显增加. 关键词： 金刚石薄膜 辐射探测器 电学性能 脉冲高度分布     

Plasma response to transient high voltage pulses

This review reports on plasma response to transient high voltage pulses in a low pressure unmagnetized plasma. Mainly, the experiments are reviewed, when a disc electrode (metallic and dielectric) is biased pulsed negative or positive. The main aim is to review the electron loss in plasmas and particle balance during the negative pulse electrode biasing, when the applied pulse width is less than the ion plasma period. Though the applied pulse width is less than the ion plasma period, ion rarefaction waves are excited. The solitary electron holes are reviewed for positive pulsed bias to the electrode. Also the excitation of waves (solitary electron and ion holes) is reviewed for a metallic electrode covered by a dielectric material. The wave excitation during and after the pulse withdrawal, excitation and propagation characteristics of various electrostatic plasma waves are reviewed here.     

快上升沿电磁脉冲作用下PIN二极管中的电流过冲现象

 为了研究瞬态电磁脉冲对PIN二极管的干扰，利用基于扩散漂移模型的基本半导体方程，采用半导体器件一维瞬态数值仿真的方法,对快上升沿阶跃电磁脉冲作用下PIN二极管中的电流密度和电荷密度分布的变化进行了研究，分别观察了正反偏电压脉冲作用下过冲电流的产生过程并进行了分析。分析表明，过冲电流是和PIN二极管在高频下的容性表现相关的，无论是在正电压还是负电压情况下，脉冲上升沿时间越短、初始正偏压越高，则过冲电流密度的峰值越高。     

Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel metal--oxide--semiconductor field-effect transistors

The effect of substrate bias on the degradation during applying a negative bias temperature (NBT) stress is studied in this paper. With a smaller gate voltage stress applied, the degradation of negative bias temperature instability (NBTI) is enhanced, and there comes forth an inflexion point. The degradation pace turns larger when the substrate bias is higher than the inflexion point. The substrate hot holes can be injected into oxide and generate additional oxide traps, inducing an inflexion phenomenon. When a constant substrate bias stress is applied, as the gate voltage stress increases, an inflexion comes into being also. The higher gate voltage causes the electrons to tunnel into the substrate from the poly, thereby generating the electron--hole pairs by impact ionization. The holes generated by impact ionization and the holes from the substrate all can be accelerated to high energies by the substrate bias. More additional oxide traps can be produced, and correspondingly, the degradation is strengthened by the substrate bias. The results of the alternate stress experiment show that the interface traps generated by the hot holes cannot be annealed, which is different from those generated by common holes.     

电极材料及偏压极性对氧化物介质击穿行为的影响及机制

忆阻器和能量存储电容器具有相同的三明治结构,然而两个器件需要的操作电压有明显差异,因此在同一个器件中,研究操作电压的影响因素并对操作电压进行调控,实现器件在不同领域的应用是十分必要的一个工作.本文利用反应磁控溅射技术在ITO导电玻璃、Pt/Si基底上生长了多晶ZrO_2和非晶TaO_x薄膜,选用不同金属材料Au, Ag和Al用作上电极构建了多种金属/氧化物介质/金属三明治结构的电容器,研究了器件在不同偏压极性下的击穿强度.结果发现:底电极是ITO的ZrO_2基电容器在负偏压下的击穿电场比Pt电极器件稍大.不管底电极是ITO还是Pt, Ag作为上电极时器件的击穿强度均存在明显的偏压极性依赖性,正偏压下的击穿电场减小了一个数量级;相反,在Al作为上电极的Al/TaO_x/Pt器件中,正向偏压比负向偏压下的击穿电场增加了近2倍.上述器件的不同击穿行为分别可以由氧化物电极和介质界面层间氧的迁移和重排、电化学活性金属电极的溶解迁移和还原以及化学活性金属电极与氧化物界面的氧化还原反应来解释.该实验结果对有不同操作电压要求的器件,如忆阻器和介质储能电容器等在器件设计和操作方面具有指导意义.     

Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress

A new type of degradation phenomena featured with increased subthreshold swing and threshold voltage after negative gate bias stress (NBS) is observed for amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), which can recover in a short time. After comparing with the degradation phenomena under negative bias illumination stress (NBIS), positive bias stress (PBS), and positive bias illumination stress (PBIS), degradation mechanisms under NBS is proposed to be the generation of singly charged oxygen vacancies ($V_{\mathrm{o}}^{+}$) in addition to the commonly reported doubly charged oxygen vacancies ($V_{\mathrm{o}}^{2+}$). Furthermore, the NBS degradation phenomena can only be observed when the transfer curves after NBS are measured from the negative gate bias to the positive gate bias direction due to the fast recovery of $V_{\mathrm{o}}^{+}$ under positive gate bias. The proposed degradation mechanisms are verified by TCAD simulation.     

Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor

This paper studies the effect of drain bias on ultra-short p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) degradation during negative bias temperature (NBT) stress. When a relatively large gate voltage is applied, the degradation magnitude is much more than the drain voltage which is the same as the gate voltage supplied, and the time exponent gets larger than that of the NBT instability (NBTI). With decreasing drain voltage, the degradation magnitude and the time exponent all get smaller. At some values of the drain voltage, the degradation magnitude is even smaller than that of NBTI, and when the drain voltage gets small enough, the exhibition of degradation becomes very similar to the NBTI degradation. When a relatively large drain voltage is applied, with decreasing gate voltage, the degradation magnitude gets smaller. However, the time exponent becomes larger. With the help of electric field simulation, this paper concludes that the degradation magnitude is determined by the vertical electric field of the oxide, the amount of hot holes generated by the strong channel lateral electric field at the gate/drain overlap region, and the time exponent is mainly controlled by localized damage caused by the lateral electric field of the oxide in the gate/drain overlap region where hot carriers are produced.     

Coexistence of nonvolatile unipolar and volatile threshold resistive switching in the Pt/LaMnO3/Pt heterostructures

Coexistence of nonvolatile unipolar and volatile threshold resistive switching is observed in the Pt/LaMnO₃ (LMO)/Pt heterostructures. The nonvolatile unipolar memory is achieved by applying a negative bias, while the volatile threshold resistive switching is obtained under a positive bias. Additionally, the pristine low resistance state (LRS) could be switched to high resistance state (HRS) by the positive voltage sweeping, which is attributed to the conduction mechanism of Schottky emission. Subsequently, the insulator-to-metal transition in the LMO film due to formation of ferromagnetic metallic phase domain contributes to the volatile threshold resistive switching. However, the nonvolatile unipolar switching under the negative bias is ascribed to the formation/rupture of oxygen-vacancy conducting filaments. The simultaneously controllable transition between nonvolatile and volatile resistance switching by the polarity of the applied voltage exhibits great significance in the applications of in-memory computing technology.     

Effect of filament biasing on nanocrystalline-Si films deposited by hot wire chemical vapor deposition

Nanocrystalline silicon (nc-Si) films were deposited by hot wire chemical vapor deposition with applying positive or negative filament biases. These films were characterized by Raman spectroscopy, field emission scanning electron microscopy and X-ray photoelectron spectroscopy. Plasmon loss of the Si(2p) band region was shifted to higher energy due to dielectric changes with applied filament biases from negative to positive voltage. A semi-quantitative study of the valence band structure was employed to analyze the bias effect of the valance band in nc-Si networks. Nc-Si with a positive filament bias shows better microstructural properties than those with a negative bias and without biasing nc-Si films.     

靶材偏置低电压对激光等离子体诱导靶上电势信号的影响

针对激光等离子体在Cu靶上诱导产生的电势信号展开实验研究，主要讨论了靶材偏置低电压时对电势信号的影响. 实验结果表明，外加低电压时，靶上电势信号呈现单峰脉冲结构，且靶材偏置负压时为正脉冲，偏置正压时为负脉冲，脉冲幅值随偏置电压增大而增大. 通过对靶上电势信号演化特性的详细分析，从等离子体荷电效应出发，结合靶材偏压造成的电场效应成功解释了靶材偏压对靶上电势信号的影响.     

靶材偏置低电压对激光等离子体诱导靶上电势信号的影响

针对激光等离子体在Cu靶上诱导产生的电势信号展开实验研究,主要讨论了靶材偏置低电压时对电势信号的影响. 实验结果表明,外加低电压时,靶上电势信号呈现单峰脉冲结构,且靶材偏置负压时为正脉冲,偏置正压时为负脉冲,脉冲幅值随偏置电压增大而增大. 通过对靶上电势信号演化特性的详细分析,从等离子体荷电效应出发,结合靶材偏压造成的电场效应成功解释了靶材偏压对靶上电势信号的影响. 关键词： 激光等离子体 电势 金属元靶 偏置电压     

Geometrical optimization of a surface DBD powered by a nanosecond pulsed high voltage

In this study, surface Dielectric Barrier Discharge (DBD) actuators powered by nanosecond pulsed high voltage are investigated. The goal is to experimentally characterize the surface DBD actuators in terms of electrical and geometrical parameters.The actuators are made of two conducting electrodes separated by a thin dielectric (Kapton films) and arranged asymmetrically. The active electrode is connected to a pulsed high voltage power supply (voltage up to ±10 kV, rise and fall times of 50 ns and pulse width of 250 ns) and the second electrode is grounded.The experimental results show that the energy per pulse (normalized by the length of the active electrode) is smaller when one increases the inter-electrode spacing between 1 and 3 mm, the thickness of the dielectric barrier between 120 and 360 μm or the length of the electrodes between 10 and 50 cm, for both applied voltage polarities.Optical characterization of the plasma layer for different electrode gaps has been investigated by using an ICCD camera. Results indicate that the plasma produced by positive and negative rising voltage propagates in a streamer-like regime with numerous and well-distributed channels, for any electrode gap distance. However, the positive and negative falling voltage produces similar discharges only for large electrode gaps. In this case, the plasma layer starts from a corona spot in contact with the active electrode and expands in the direction of the grounded electrode in a plume shape.     

针-板DBD微流注与微辉光交替生成的机理研究

在介质阻挡放电体系中产生辉光放电可以有效的提高放电体系产生高能电子的性能, 为等离子体化学反应提供更加丰富的活性粒子.本文对针-板介质阻挡放电体系下的放电模式进行了研究,实验发现放电正负半周期表现出不同的放电模式, 激励电压为3 kV时放电正负半周期分别为微流注放电和电晕放电(或者Trichel脉冲放电),激励电压为6 kV时放电正负半周期分别为微流注放电和微辉光放电.微辉光放电形貌具有与典型辉光放电相同的分层次放电结构, 分析了激励电压6 kV时的放电过程,认为足够强的阴极电场强度和裸露针状电极形成的有效的二次电子发射过程是形成微辉光放电的主要因素,绝缘介质层的存在避免了微辉光放电向弧光放电过渡.     

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采用PIC/MCC模型,通过数值模拟的方法研究了束线离子和靶台复合加速离子注入过程中靶台偏压大小对注入过程离子动力学行为的影响,重点考察了不同偏压作用下离子的注入能量、注入剂量、注入角度以及注入范围的变化.结果表明,靶台上施加脉冲偏压后,在束流离子的作用下空间电荷分布发生变化,束流正下方的电势线会发生凹曲,凹曲的电场同时又作用于空间中的带电粒子,影响粒子的运动;靶台偏压越高,零电势线距离靶台越远,靶台电场对离子的作用范围越大.离子的注入剂量、注入能量随着靶台偏压的增大而增大,而偏压对离子注入角度的影响并不大,大部分离子都以垂直入射的方式注入到靶台表面.另外,离子注入到靶台上的面积会因束流离子在靶台电场中飞行偏转而增大,并且偏压越大注入面积增大越明显.     

铁电薄膜可调带通滤波器

铁电薄膜的介电常数随外加电场强度的增加而减小.依据铁电薄膜的这一特性,提出了一种新颖的基于共面传输线结构的铁电薄膜可调带通滤波器.为了减小传输损耗,滤波器的导体部分由超导薄膜构成.滤波器的输入输出采用抽头线的方式分别与谐振器相接,外加电压通过输入输出端口直接施加到共面谐振器缝隙处的铁电薄膜上,用以改变铁电薄膜的介电常数,从而改变谐振器的谐振频率,实现带通滤波器通带频率的移动.这种新型可调带通滤波器具有结构紧凑、尺寸小及施加外加偏压容易等优点.仿真结果表明:铁电薄膜的介电常数在外加偏压下从250减小到150时,带通滤波器的传输特性曲线的形状基本保持不变,通带的中心频率从10.283GHz增加到10.518GHz,其3dB带宽保持在0.150GHz左右,反射损耗始终小于-17dB.     

Ni/4H-SiC肖特基势垒二极管的γ射线辐照效应

对制备的Ni/4H-SiC肖特基势垒二极管（SBD）进行了γ射线辐照试验,并在辐照过程中对器件分别加0和-30?V偏压.经过1?Mrad（Si）总剂量的γ射线辐照后,不同辐照偏压下的Ni/4H-SiC肖特基接触的势垒高度和理想因子没有退化,SiC外延层中的少子寿命也没有退化.辐照后器件的反向电流下降,这是由于器件表面的负界面电荷增加引起的.研究表明,辐照偏压对Ni/4H-SiC SBD的辐照退化效应没有明显的影响. 关键词： 碳化硅 肖特基 辐照效应 偏压     

Charging/discharging kinetics in LPCVD silicon nanocrystal MOS memory structures

The paper focuses on the peculiarities of charging/discharging kinetics and write/erase (W/E) window formation in nanocrystal metal-oxide semiconductor (MOS) non-volatile memory (NVM) structures prepared by low-pressure chemical vapor deposition (LPCVD) of amorphous silicon, followed by solid phase crystallization and thermal oxidation. It is generally known that the W/E window formation via pulse injection depends on the kinetics of carriers trapping (electrons and/or holes) in the nanocrystal NVM structure and consequently on the cumulative time of recharging bias application, i.e. pulse duration and number of applied pulses. In this work, we have shown that with the same cumulative time biasing but different charging pulse durations, the resulting W/E window width can be rather different, demonstrating a staircase window formation. This phenomenon is interpreted by a model of partial fast charge draining from the trapping sites in the vicinity of Si nanoclusters into the Si substrate. The detailed experimental investigation of charging/discharging kinetics of the considered structures in combination with computer simulations lead to the conclusion that there is a single process of negative charge trapping with a time constant of 235±35 ms and at least four processes of positive charge trapping with time constants distributed in the range from <10 ms to >10 s.     

绝缘体上硅金属氧化物半导体场效应晶体管中辐射导致的寄生效应研究

基于⁶⁰Co γ射线源研究了总剂量辐射对绝缘体上硅（silicon on insulator,SOI）金属氧化物半导体场效应晶体管器件的影响.通过对比不同尺寸器件的辐射响应,分析了导致辐照后器件性能退化的不同机制.实验表明：器件的性能退化来源于辐射增强的寄生效应;浅沟槽隔离（shallow trench isolation,STI）寄生晶体管的开启导致了关态漏电流随总剂量呈指数增加,直到达到饱和;STI氧化层的陷阱电荷共享导致了窄沟道器件的阈值电压漂移,而短沟道器件的阈值电压漂移则来自于背栅阈值耦合;在同一工艺下,尺寸较小的器件对总剂量效应更敏感.探讨了背栅和体区加负偏压对总剂量效应的影响,SOI器件背栅或体区的负偏压可以在一定程度上抑制辐射增强的寄生效应,从而改善辐照后器件的电学特性.     

超深亚微米PMOS器件的NBTI退化机理

对超深亚微米PMOS器件的负栅压温度不稳定性(NBTI)退化机理进行了研究.主要集中在对器件施加NBT和随后的PBT应力后器件阈值电压的漂移上.实验证明反型沟道中空穴在栅氧中的俘获以及氢分子在栅氧中的扩散是引起NBTI退化的主要原因.当应力条件变为PBT时，陷落的空穴可以快速退陷，但只有部分氢分子可以扩散回栅氧与衬底界面钝化硅悬挂键，这就导致了PBT条件下阈值电压只能部分恢复. 关键词： 超深亚微米PMOS器件 负偏压温度不稳定性 界面陷阱 氢气     

55 nm硅-氧化硅-氮化硅-氧化硅-硅闪存单元的γ射线和X射线电离总剂量效应研究

基于~(60)Co-γ射线和10 keV X射线辐射源,系统地研究了55 nm硅-氧化硅-氮化硅-氧化硅-硅闪存单元的电离总剂量效应,并特别关注其电学特性退化的规律与物理机制.总剂量辐照引起闪存单元I-V特性曲线漂移、存储窗口变小和静态电流增大等电学特性的退化现象,并对其数据保持能力产生影响.编程态闪存单元的I_d-V_g曲线在辐照后显著负向漂移,而擦除态负向漂移幅度较小.对比两种射线辐照,擦除态的I_d-V_g曲线漂移方向不同.相比于擦除态,富含存储电子的编程态对总剂量辐照更为敏感;且相比于~(60)Co-γ射线,本文观测到了显著的X射线剂量增强效应.利用TCAD和Geant 4工具,从能带理论详细讨论了55 nm硅-氧化硅-氮化硅-氧化硅-硅闪存单元电离总剂量效应和损伤的物理机制,并模拟和深入分析了X射线的剂量增强效应.