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1.
We theoretically investigated InGaAsP/InP evanescent mode waveguide optical isolators and proposed their application to InGaAsP/InP/Si hybrid evanescent optical isolators. InGaAsP/InP evanescent optical isolators are composed of semiconductor optical amplifier (SOA) waveguides having InGaAsP multiple quantum well (MQW) active layer and upper InGaAsP waveguide layer with ferromagnetic layer. Optical isolation is obtained for evanescent optical mode in the InGaAsP waveguide layer. InGaAsP/InP/Si hybrid evanescent optical isolators are theoretically proposed based on the idea of InGaAsP/InP evanescent optical isolators. InGaAsP/InP/Si hybrid evanescent optical isolators are composed of ferromagnetic metal loaded silicon evanescent waveguides with wafer-bonded InGaAsP/InP optical gain material. The optical isolation and propagation loss are discussed with the structure of silicon evanescent waveguides, and optical isolation of 8.0 dB/mm was estimated. The concept of semiconductor evanescent mode optical isolators is feasible with InP based photonic integrated circuits and advanced silicon photonics.  相似文献   

2.
High-resolution photoemission spectra of an array of one-dimensional (1D) metallic chains created on Si(335) reveal characteristic features precluding any interpretation within known theoretical models. The origin of this dilemma is attributed to imperfections acting as boundaries in 1D systems. A simple model calculation including a Coulomb shift in the photoemission final state of chain segments yields straight simulations of our spectra and is likely to clarify the confusing situation encountered in this field.  相似文献   

3.
Image contrast enhancement, high lateral resolution, and height information are obtained with induced polarization evanescent imaging using a solid immersion lens. Experiments are conducted by imaging features on a patterned Si substrate. Imaging theory is used to predict optimum orientation of high-spatial-frequency samples, and a topographical image is derived from the induced polarization image through a calibration procedure. A numerical aperture of 1.5 is used in the experiment. Height accuracy of +/-2 nm is demonstrated with a known sample.  相似文献   

4.
Under the generalized gradient approximation (GGA), the electronic and magnetic properties are studied for H-terminated zigzag edge Si nanoribbon (ZSiNR) decorated with a single C chain by using the first-principles projector augmented wave (PAW) potential within the density function theory (DFT) framework. The results show that either a perfect ZSiNR or a single C chain decorated ZSiNR, the ferromagnetic state is preferred over the antiferromagnetic state. But a single C chain decorated ZSiNR is more stable than the perfect one. Furthermore, the electronic and magnetic properties of a ZSiNR can be modulated in detail by a single C chain at different positions.  相似文献   

5.
Arnoldus HF  Foley JT 《Optics letters》2003,28(15):1299-1301
Electric dipole radiation consists of traveling and evanescent plane waves. When radiation is detected in the far field, only the traveling waves will contribute to the intensity distribution, as the evanescent waves decay exponentially. We propose a method to spatially separate the traveling and evanescent waves before detection. It is shown that when the radiation passes through an interface, evanescent waves can be converted into traveling waves and can subsequently be observed in the far field. Let the radiation be observed under angle theta(t) with the normal. Then there exists an angle theta(ac) such that for 0 < or = theta(t) < theta(ac) all intensity originates in traveling waves, whereas for theta(ac) < theta(t) < pi/2 only evanescent waves contribute. It is shown that with this technique and under the appropriate conditions almost all far-field power can be provided by evanescent waves.  相似文献   

6.
The first-principles projector-augmented wave (PAW) potentials within the density function theory (DFT) framework have been used to determine the geometry structures and electronic properties of the zigzag edge AlN nanoribbons (ZAlNNRs) doped with a single Si chain under generalized gradient approximation (GGA). The average Al–Si, Si–Si, Al–N, Si–N, Al–H and N–H bond lengths are 2.39, 2.16, 1.83, 1.74, 1.59 and 1.03 Å, respectively. Pure 7-ZAlNNR is an indirect semiconductor with a large band gap of 2.235 eV, while a semiconductor to metal transformation is taken place after a single Si chain substituting for a single Al–N chain at various positions. In pure 7-ZAlNNR, the HVB and LCB are mainly attributed to the edge N and Al atoms, respectively, while in a single Si chain substituting doped 7-ZAlNNR, the HVB and LCB are mainly attributed to the Si atoms. The Al–N, Al–H and Al–Si bonds are ionic bond, the Si–Si and Si–H bonds are covalent bond, the N–H and N–Si bonds are covalent bond modified ionic bond.  相似文献   

7.
A basic formula for the coefficient of energy emission from an evanescent electromagnetic wave at scattering by a dielectric structure is derived. The derived formula is interpreted in terms of interference of an incident evanescent wave with its reflection by the structure and applied to evanescent wave scattering by a 3D random medium.  相似文献   

8.
Ksendzov A  Lin Y 《Optics letters》2005,30(24):3344-3346
Using an integrated optics ring-resonator biosensor, we have demonstrated the detection of protein in low concentrations. We detected 0.3 nM of avidin in a buffered saline solution; the calculated detection limit is 0.1 nM (6.8 ng/ml) for avidin, which compares favorably with those of other optical protein detection techniques. Further improvement is possible. Our ring resonator utilizes Si(x)N(y)/SiO2 waveguides, which, owing to evanescent field interaction, change the effective refractive index when target molecules are immobilized on their surfaces. The selectivity of the sensor depends on the biotin surface coating, which causes the specific binding and immobilization of avidin.  相似文献   

9.
 提出了点源嵌入正折射率介质板进行亚波长成像的新方法,分析了位于负折射率媒质里的正折射率介质板内外的电压倏逝波和电压传播波分布。正和负折射率媒质分别由2维未加载传输线和2维加载电感、电容传输线网络组成。微波电路和数值仿真结果都显示由于板内增大的倏逝场,在正折射率介质板的两个界面附近出现了很大的电压幅度,该结果证实了该正折射率介质板透镜能够恢复电压倏逝波,从而提高像的分辨率。  相似文献   

10.
The imaging system formed by an annular left-handed material (LHM) lens as well as the evanescent waves in the lens are simulated numerically with a finite-difference time-domain (FDTD) method. For b - a 〉 λ (a and b are respectively the inner and outer radii of the annular lens, and λ is the wavelength), when a point source is placed at an internal grid point, we demonstrate that the evanescent waves are produced around the internal interface, and cannot propagate outwards. As for b - a 〈λ ),, the evanescent waves appear around both the internal and the external interfaces, which remarkably implies the coupling between the two interfaces. Hence it can be inferred that the evanescent waves around the external interface participating in the super-resolution imaging result from the coupling of the evanescent waves around the interface. Moreover, the partly uncomprehended properties of the evanescent waves in the LHM slab are also disclosed. It is conducive to understanding the evanescent waves in the LHMs further.  相似文献   

11.
We have optimized the settings of evanescent wave imaging for the visualization of a protein adsorption layer.The enhancement of the evanescent wave at the interface brought by the incident angle,the polarized state of light beam as well as a gold layer is considered.In order to improve the image contrast of a protein monolayer in experiments,we have optimized three factors- the incident angle,the polarization of light beam,and the thickness of an introduced thin gold layer with a theoretical simulation.  相似文献   

12.
We report about the contribution of thermally grown SiOx overlayer on the SiOx/Si interface (with oxidation states Sin+, where n = 1, 2, 3, 4) to the optical losses of a resonant spectroscopic cavity. The experiments on Si oxide thin films were performed in evanescent wave for Si samples in contact with a total internal reflection surface of a BK7 prism. The evanescent field can be exploited to investigate properties and processes such as the absorption of thin film or solid/air interface reactions. The results show that the oxide overlayer thickness grows with the thermal exposure time and is limited after more than 7 h of treatment. Transmission electron microscopy has been used for the native oxide thickness measurement and angle-resolved X-ray photoelectron spectroscopy used to determine the thermal oxide thickness. A change of absorption coefficient Δα in the range 100–200 cm?1 is obtained by evanescent-wave cavity ring-down spectroscopy (EW-CRDS) for thermal silicon oxide overlayer, in agreement with the general trend from literature. The evaluation from the EW-CRDS experiments presents the used setup as a competitive method for measuring the absorption properties of thin overlayer.  相似文献   

13.
用密度泛函理论(DFT)的B3LYP/6-311G*方法,对Si2CmN(m=2-10)团簇的几何构型、振动频率和基态能量等性质进行了研究,讨论了化学键的特征和热力学稳定性。振动频率和振动强度被用来判断体系的基态结构。结果表明,m=2-10的团簇为线性结构,随着m的增大,团簇的自旋多重度均为2,Si原子在C与N原子形成的线性链端部成键,团簇的基态能量近似线性增大。m为偶数的Si2CmN团簇比m为奇数的更为稳定。  相似文献   

14.
Heterodyne optical feedback on a solid-state laser is experimentally investigated as an efficient tool to characterize coherently near-field evanescent waves. A well-known topography of evanescent field is obtained via a total internal reflection of the light beam emitted by a class B Yb:Er glass laser. A subwavelength size optical fiber tip is scanned to locally probe the resulting evanescent wave in the near field. After a frequency shifting using a pair of acousto-optic modulators, the collected light is optically reinjected to excite the relaxation oscillations of the laser. The resulting dynamical response simultaneously allows very sensitive measurements of the amplitude and the phase of the evanescent wave. Extension of these preliminary results to near-field optical microscopy is suggested and discussed.  相似文献   

15.
应用群论及原子分子反应静力学方法推导Si分子的电子态及其离解极限,在B3P86/CC-PVTZ水平上,对Si3分子基态进行优化计算,得出Si3基态的单重态能量最低,其稳定构性为的C2V构型,平衡核间距Re=0.2176nm、∠213=79.7°,能量为-869.2057a.u..同时计算出基态的简正振动频率:对称伸缩振动频率ν(B2)=547.6446cm-1,弯曲振动频率ν(A1)=185.6100cm-1和反对称伸缩振动频率ν(A1)=559.6090cm-1.在此基础上,使用多体项展式理论方法,导出了基态Si3分子的全空间解析势能函数,该势能函数准确再现了Si3(C2V)平衡结构.  相似文献   

16.
In this work we demonstrate the formation of a new type of polariton on the interface between a cuprous oxide slab and a polystyrene microsphere placed on the slab. The evanescent field of the resonant whispering gallery mode (WGM) of the microsphere has a substantial gradient, and therefore effectively couples with the quadrupole 1S excitons in cuprous oxide. This evanescent polariton has a long lifetime, which is determined only by its excitonic and WGM component. The polariton lower branch has a well-pronounced minimum. This suggests that this excitation is localized and can be utilized for possible BEC. The spatial coherence of the polariton can be improved by assembling the microspheres into a linear chain.  相似文献   

17.
Deposits of Ag on Si(111), at room temperature, have yielded a linear Auger signal-time characteristic to a gradient break point at (7.6 ± 0.9) × 1014 atoms ofAg cm?2, which is very close to the Si surface state density of (8–10) × 1014 cm?2, and which supports a Stranski-Krastanov growth mechanism. Analysis of the Auger spectra at the monolayer end point revealed a new peak at 82 ± 1 eV. This peak is believed to arise from an Auger process involving an induced Ag-Si interface state. A model is proposed for this state arising from the chemisorption of Ag on Si.  相似文献   

18.
Optics of tunneling from adiabatic nanotapers   总被引:1,自引:0,他引:1  
Sumetsky M 《Optics letters》2006,31(23):3420-3422
A theory of light propagation along adiabatic photonic nanowire tapers (nanotapers) having diameters significantly less than the radiation wavelength lambda approximately 1 microm is developed. The fundamental mode of a nanotaper primarily consists of an evanescent field, which propagates in the ambient medium and is very sensitive to the nanotaper shape. General analytical expressions for the evanescent field and the radiation loss of adiabatic nanotapers are obtained and applied to the investigation of the optics of tunneling from a nanotaper of a characteristic shape. The radiation loss of this nanotaper occurs locally near a focal circumference of the evanescent field, representing an intersection of a complex caustic surface with real space, where the fundamental mode splits into the radiating and guiding components. The interference of these components gives rise to a sequence of circumferences with zero electromagnetic field.  相似文献   

19.
The scattering of transmitted and evanescent electromagnetic waves by threadlike photonic crystals, made of different materials, is studied theoretically. The reflection and transmission spectra of the waves, the electric vector of which is parallel to the threads, are calculated on the basis of a matrix Riccati equation. The physical reasons for the appearance of transparency peaks in the transmission spectra of threadlike photonic crystals are discussed. It is established that narrowband filters suggested previously and formed by a periodic system of Si threads about 1 μm in diameter and adjusted to a wavelength of 1.5 μm totally lose their filtering capabilities at small deviations (about 5%) from the thread diameter. However, the reflection and transmission spectra of filters containing periodically packed metallized Si threads are stable in the case of such variations in thread size. It is shown that threadlike crystals are an effective discrete mirror for radiation of the near- and mid-IR spectral range. The capabilities of threadlike crystals for filtering homogeneous and inhomogeneous waves are shown.  相似文献   

20.
The tunneling of evanescent waves into propagating waves is related to the convolution of the high spatial frequencies of the source with those of the detectors. Such an approach is demonstrated by treating the evanescent waves which are diffracted from very narrow apertures in a plane screen (with dimensions much smaller than the wavelength) and are converted to propagating waves by tip detectors. The mechanism responsible for the conversion of evanescent waves into propagating waves is explained and a general formula for the conversion of evanescent waves into propagating waves is derived. PACS 42.25.Fx; 42.30.Kq; 42.25.Bs  相似文献   

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