Nonlinear spin-polarized transport through a ferromagnetic domain wall

A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as functions of wall width and temperature. As the width increases or the temperature decreases, direct tunneling between the majority spin bands reduces the effectiveness of the diode. This has important implications for the zero-field quenched resistance of magnetic semiconductors and for the design of a recently proposed spin transistor.     

Domain wall resistance in perpendicular (Ga,Mn)As: Dependence on pinning

We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning.     

Domain wall resistance in epitaxial Fe wires

We studied the magnetoresistance behavior of epitaxial Fe wires grown on GaAs(1 1 0) with varying widths at room temperature. Single nanowires show a wire width (w) dependence of the coercive field, which increases with 1/w for decreasing wire widths. This enables the pinning of a single domain wall in the connection area of two wires with different widths. Magnetoresistance measurements of such wire structures clearly reveal resistance contributions arising from a domain wall. The presence of the domain wall is proven by photoemission electron-microscopy with synchrotron radiation. Moreover, micromagnetic simulations are performed to determine the spin orientations, especially within the domain wall. This permits us to calculate the anisotropic magnetoresistance caused by the domain wall. Taking this into account, we determine the intrinsic domain wall resistance, for which we found a positive value of 0.2%, in agreement with theoretical predictions.     

Current driven domain wall velocities exceeding the spin angular momentum transfer rate in permalloy nanowires

The velocity of domain walls driven by current in zero magnetic field is measured in permalloy nanowires using real-time resistance measurements. The domain wall velocity increases with increasing current density, reaching a maximum velocity of approximately 110 m/s when the current density in the nanowire reaches approximately 1.5 x 10(8) A/cm(2). Such high current driven domain wall velocities exceed the estimated rate at which spin angular momentum is transferred to the domain wall from the flow of spin polarized conduction electrons, suggesting that other driving mechanisms, such as linear momentum transfer, need to be taken into account.     

Influence of current on field-driven domain wall motion in permalloy nanowires from time resolved measurements of anisotropic magnetoresistance

The motion of magnetic domain walls in permalloy nanowires is investigated by real-time resistance measurements. The domain wall velocity is measured as a function of the magnetic field in the presence of a current flowing through the nanowire. We show that the current can significantly increase or decrease the domain wall velocity, depending on its direction. These results are understood within a one-dimensional model of the domain wall dynamics which includes the spin transfer torque.     

Temperature-dependent asymmetry of the nonlocal spin-injection resistance: evidence for spin nonconserving interface scattering

We report nonlocal spin injection and detection experiments on mesoscopic Co-Al2O3-Cu spin valves. We have observed a temperature-dependent asymmetry in the nonlocal resistance between parallel and antiparallel configurations of the magnetic injector and detector. This strongly supports the existence of a nonequilibrium resistance that depends on the relative orientation of the detector magnetization and the nonequilibrium magnetization in the normal metal providing evidence for increasing interface spin scattering with temperature.     

Effects of Rashba Spin-Orbit Coupling on the Anisotropic Magneto Resistance in Domain Wall

The present paper, based on semi-classical Boltzmann equation, aims to investigate the effects of Rashba and Dresselhaus spin orbit interaction and impurities on domain wall anisotropic magneto resistance. It has been shown that the mentioned effects play a remarkable role in anisotropic magneto resistance of electron current in domain walls. It was also concluded that while an increase in Rashba coupling strength can effectively enhance anisotropic magneto resistance of the domain wall, an increase in the wave-vector and exchange interaction leads to their decrease.     

Current induced domain wall motion in GaMnAs close to the Curie temperature

Domain wall dynamics produced by spin transfer torques is investigated in (Ga, Mn)As ferromagnetic semiconducting tracks with perpendicular anisotropy, close to the Curie temperature. The domain wall velocities are found to follow a linear flow regime which only slightly varies with temperature. Using the D?ring inequality, boundaries of the spin polarization of the current are deduced. A comparison with the predictions of the mean field k·p theory leads to an estimation of the carrier density whose value is compatible with results published in the literature. The spin polarization of the current and the magnetization of the magnetic atoms present similar temperature variations. This leads to a weak temperature dependence of the spin drift velocity and thus of the domain wall velocity. A combined study of field- and current-driven motion and deformation of magnetic domains reveals a motion of domain walls in the steady state regime without transition to the precessional regime. The ratio between the non-adiabatic torque β and the Gilbert damping factor α is shown to remain close to unity.     

Domain wall motion by the magnonic spin Seebeck effect

The recently discovered spin Seebeck effect refers to a spin current induced by a temperature gradient in a ferromagnetic material. It combines spin degrees of freedom with caloric properties, opening the door for the invention of new, spin caloritronic devices. Using spin model simulations as well as an innovative, multiscale micromagnetic framework we show that magnonic spin currents caused by temperature gradients lead to spin transfer torque effects, which can drag a domain wall in a ferromagnetic nanostructure towards the hotter part of the wire. This effect opens new perspectives for the control and manipulation of domain structures.     

Magnetic moment softening and domain wall resistance in Ni nanowires

We perform ab initio calculations of the electronic structure and conductance of atomic-size Ni nanowires with domain walls only a few atomic lattice constants wide. We show that the hybridization between noncollinear spin states leads to a reduction of the magnetic moments in the domain wall resulting in the enhancement of the domain wall resistance. Experimental studies of the magnetic moment softening may be feasible with modern techniques such as scanning tunneling spectroscopy.     

Individual domain wall resistance in submicron ferromagnetic structures

The resistance generated by individual domain walls is measured in a FePd nanostructure. Combining transport and magnetic imaging measurements, the intrinsic domain wall resistance is quantified. It is found positive and of a magnitude consistent with that predicted by models based on spin scattering effects within the walls. This magnetoresistance at a nanometer scale allows a direct counting of the number of walls inside the nanostructure. The effect is then used to measure changes in the magnetic configuration of submicron stripes under application of a magnetic field.     

Thermal effects on domain wall depinning from a single notch

The statistical behavior of the domain wall depinning from a notch placed in a thin ferromagnetic wire is studied by means of a stochastic one-dimensional model which considers the wall as a rigid object inside a parabolic potential at room temperature. This analysis reveals the key role of thermal fluctuations on the current and field-induced domain wall depinning, and it allows for direct comparison with experiments in order to gain information on the nonadiabaticity degree of the spin torque.     

Indirect control of antiferromagnetic domain walls with spin current

The indirect controlled displacement of an antiferromagnetic domain wall by a spin current is studied by Landau-Lifshitz-Gilbert spin dynamics. The antiferromagnetic domain wall can be shifted both by a spin-polarized tunnel current of a scanning tunneling microscope or by a current driven ferromagnetic domain wall in an exchange coupled antiferromagnetic-ferromagnetic layer system. The indirect control of antiferromagnetic domain walls opens up a new and promising direction for future spin device applications based on antiferromagnetic materials.     

Spin torque on magnetic domain walls exerted by supercurrents

We calculate the spin density, spin currents and spin torque due to a spin polarized current on a magnetic domain wall juxtaposed to or inserted in a conventional superconductor. The superconductor is part of a heterostructure of the type NSN or FSF. In general, the spin torque exerted on the domain wall is weaker with respect to a normal metal. However, there are regimes where the torque is enhanced with respect to the normal metal. In these regimes the motion of the domain wall is therefore more efficient. A notable case is the passing of an unpolarized current which leads to a finite torque in the case of the superconductor.     

Spin waves in static non-periodic magnetic structures

We have studied the propagation of spin waves in a number of static non-periodic magnetic structures. We have established that (1) a ferromagnetic spin wave can ride over a domain wall with little reflection if its wavelength is less than twice the thickness of the wall; (2) in a ferromagnet with a set of parallel but irregularly spaced domain walls the spin wave linewidth is determined by the product of the scattering strength of the walls and the degree of randomness of the wall spacings; and (3) spin waves of rather narrow linewidths can exist in continuously varying irregular spin structures.     

Temperature dependence of the spin torque effect in current-induced domain wall motion

We present an experimental study of domain wall motion induced by current pulses as well as by conventional magnetic fields at temperatures between 2 and 300 K in a 110 nm wide and 34 nm thick Ni80Fe20 ring. We observe that, in contrast with field-induced domain wall motion, which is a thermally activated process, the critical current density for current-induced domain wall motion increases with increasing temperature, which implies a reduction of the spin torque efficiency. The effect of Joule heating due to the current pulses is measured and taken into account to obtain critical fields and current densities at constant sample temperatures. This allows for a comparison of our results with theory.     

Excitation spectrum and thermodynamics of domain walls in the biaxial ferromagnet

The problem on spectrum of linear excitations in the presence of a moving domain wall in 1D Heisenberg ferromagnet with orthorhombic anisotropy is exactly solved. The explicit expressions for spin waves scattering on the domain wall are obtained. The phase shift of a spin wave, as the result of collision of spin wave with a moving wall, is exactly determined. The change in magnon density of states is calculated from this scattering data, and the contribution of domain walls to the classical low-temperature thermodynamics is found.     

Fast current-induced motion of a transverse domain wall induced by interfacial Dzyaloshinskii–Moriya interaction

Based on a theoretical study, we show that the interfacial Dzyaloshinskii–Moriya interaction results in very efficient current-induced manipulation of a transverse domain wall in magnetic nanowires. The efficient domain wall motion is caused by combined effects of the domain wall distortion induced by the interfacial Dzyaloshinskii–Moriya interaction and the damping-like spin–orbit spin transfer torque. We find that with reasonable parameters, the domain wall velocity reaches a few hundreds m/s at the current density of 10⁷ A/cm², which has never been achieved before. Our result will be beneficial for low-power operation of domain wall devices.     

Spin accumulation and domain wall magnetoresistance in 35 nm Co wires

An enhancement of the resistance due to the presence of only one or two isolated domain walls is clearly evidenced by transport measurements in 35 nm epitaxial Co wires, 20 &mgr;m long. The deduced relative change in the resistivity is at least 1 order of magnitude larger than the one predicted from a model based on the mixing of spin channels occurring over the length scale of the domain wall width [P. M. Levy and S. Zhang, Phys. Rev. Lett. 79, 5110 (1997)]. This inconsistency can be resolved by taking the effect of spin accumulation into account, which scales in the case of Co over the much larger distance of the spin diffusion length.     

Exchange bias in spin-engineered double superlattices

Exchange bias has been observed in sputtered magnetic double superlattices which consist of a ferromagnetically coupled superlattice grown on an antiferromagnetically (AF) coupled superlattice. This system exhibits a parallel domain wall, a spin flop transition, and exchange bias when the anisotropy is large in the AF block. This work shows that neither the domain wall nor the spin flop are directly related to exchange bias but that the anisotropy is essential.