Ultra-fast optical spectroscopy of micelle-suspended single-walled carbon nanotubes

We present results of wavelength-dependent ultra-fast pump–probe experiments on micelle-suspended single-walled carbon nanotubes. The linear absorption and photoluminescence spectra of the samples show a number of chirality-dependent peaks and, consequently, the pump–probe results sensitively depend on the wavelength. In the wavelength range corresponding to the second van Hove singularities (VHSs) we observe subpicosecond decays, as has been seen in previous pump–probe studies. We ascribe these ultra-fast decays to intraband carrier relaxation. On the other hand, in the wavelength range corresponding to the first VHSs, we observe two distinct regimes in ultra-fast carrier relaxation: fast (0.3–1.2 ps) and slow (5–20 ps). The slow component, which has not been observed previously, is resonantly enhanced whenever the pump photon energy resonates with an interband absorption peak, and we attribute it to interband carrier recombination. Finally, the slow component is dependent on the pH of the solution, which suggests an important role played by H⁺ ions surrounding the nanotubes. PACS 78.47.+p; 78.67.Ch; 73.22.-f     

Phonon and electronic nonradiative decay mechanisms of excitons in carbon nanotubes

We investigate theoretically the rates of nonradiative decay of excited semiconducting nanotubes by a variety of decay mechanisms and compare them with experimental findings. We find that the multiphonon decay (MPD) of free excitons is too slow to be responsible for the experimentally observed lifetimes. However, MPD lifetimes of localized excitons could be 2-3 orders of magnitude shorter. We also propose a new decay mechanism that relies on a finite doping of nanotubes and involves exciton decay into an optical phonon and an intraband electron-hole pair. The resulting lifetime is in the range of 5 to 100 ps, even for a moderate doping level.     

Synthesis of nitrogen-doped single-walled carbon nanotubes and monitoring of doping by Raman spectroscopy

Nitrogen-doped single-walled carbon nanotubes （CNx-SWNTs） with tunable dopant concentrations were synthesized by chemical vapor deposition （CVD）, and their structure and elemental composition were characterized by using transmission electron microscopy （TEM） in combination with electron energy loss spectroscopy （EELS）. By comparing the Raman spectra of pristine and doped nanotubes, we observed the doping-induced Raman G band phonon stiffening and 2D band phonon softening, both of which reflect doping-induced renormalization of the electron and phonon energies in the nan- otubes and behave as expected in accord with the n-type doping effect. On the basis of first principles calculations of the distribution of delocalized carrier density in both the pristine and doped nanotubes, we show how the n-type doping occurs when nitrogen heteroatoms are substitutionally incorporated into the honeycomb tube-shell carbon lattice.     

Carbon-nanotube-based saturable absorbers for near infrared solid state lasers

We demonstrate the passive mode-locking of a diode-pumped Nd⁺³:YAG (central wavelength: 1.32 μm; pulse duration: 50 ps; output energy: up to 70 μJ) laser using a polymer film containing single-wall carbon nanotubes. The mode-locking regime is stable at a pump repetition rate of up to 1 kHz. We also investigate the temporal evolution of the light-induced absorption change of the polymer film containing carbon nanotubes in the spectral range of 1.3–1.5 μm by femtosecond time-resolved pump-probe measurements. The measurements reveal that light-induced transmission exhibits fast and slow components that last 280 fs and more than 10 ps, respectively. The third-order susceptibility of the polymer film containing single wall carbon nanotubes is as high as 10⁻¹¹ esu.     

Visible and near-infrared excited-state dynamics of single-walled carbon nanotubes

Excited-state lifetimes of isolated single-walled semiconducting carbon nanotubes (SWNTs) have been measured for the first time; these excited states, observed over the 400- to 1800-nm spectral domain, possess lifetimes that range from several ps to more than 100 ps. Sub-ps to ps decay components are assigned to relaxation in SWNT bundles. Interrogation of the samples with different SWNT mean diameters further confirms the dependence of the excited-state lifetime on roll-up vector. The ratio of fast and slow decaying component contributions in the first van Hove band can be viewed as a measure of the bundle content. PACS 78.67.Ch; 78.47.+p; 61.46.+w; 73.22.-f     

Dynamics and spectra of excited states of water-micellar suspensions of single-walled carbon nanotubes

The dynamics of the photoinduced differential absorption and excited-state bleaching spectra of single-walled carbon nanotubes suspended in a micellar solution were studied in the spectral range from 40 to 1000 nm within a time interval from 70 fs to 150 ps under excitation by 50-fs pulses with photon energies 2 and 4 eV. The bleaching and absorption bands were observed in the spectra; the positions of the bleaching peaks were independent of the photon energy of the exciting femtosecond pulse in the range 2–4 eV. It was established that, for delay times shorter than 1 ps, the shape of the differential spectrum of excited nanotubes coincided with the shape of the second derivative of the absorption spectrum of unexcited nanotubes in the frequency range of exciting pulse above 18000 cm^?1 (the range of absorption bands of metallic nanotubes). In the frequency range below 16000 cm^?1 (the range of absorption peaks of semiconducting nanotubes), the bleaching peaks in the differential spectrum of excited nanotubes undergo a high-frequency shift of 200–300 cm^?1 with respect to the second-derivative spectrum of unexcited nanotubes. The excited-state relaxation rate constants were measured. They are well approximated by the exponential dependences and depend on the probe-pulse wavelength. An assumption was made about the nature of the observed spectra of excited nanotubes and about the excitation relaxation.     

Time-resolved photoinduced absorption spectroscopic study on trapped carriers at semiconductor–glass interfaces

0.4 Se_0.6 microcrystals was investigated by using time-resolved differential transmittance spectroscopy. The electron trapping at microcrystal–glass interfaces was found to occur within less than 1 ps after photoexcitation. At low excitation energy density, the excited electrons are trapped at point defects distributed over the nanocrystal interfaces. Such electrons give rise to long-lived photoinduced absorption with a lifetime of 3.2 ns. On the other hand, at high excitation energy density, transient absorption with a fast (60 ps) and simultaneously a slow decay component (3.2 ns) was observed. This short-lived photoinduced absorption is attributed to the electrons trapped at the shallow trap states of the semiconductor–glass interfaces. Received: 11 September 1996/Accepted: 9 December 1996     

Carrier transport effects and dynamics in multiple quantum well optical amplifiers

The gain recovery dynamics of multiple quantum well semiconductor optical amplifiers, following gain compression caused by ultrashort optical pulse excitation, have been studied for several devices of different structures. Fast, slow, and intermediate time constants are identified. The fast component (0.6 to 0.9 ps) corresponds to cooling of the dense, inverted electron-hole plasma. The slow component (150 to 300 ps) corresponds to replenishment of carriers from the external bias supply, with the dynamics dominated by spontaneous recombination (primarily Auger) of the electron-hole plasma. The intermediate time constant (2 to 14 ps) is caused by carrier capture by the quantum wells and is structure-dependent. For most of the devices, the capture process is dominated by diffusion-limited transport in the cladding/barrier region. The variation of carrier density and temperature also affects the refractive index profile of the devices and, hence, affects the waveguiding properties. Dynamical variation of the mode confinement factor is observed on the fast and slow timescales defined above.     

Ultrafast carrier dynamics in single-wall carbon nanotubes

Time-resolved carrier dynamics in single-wall carbon nanotubes is investigated by means of two-color pump-probe experiments. The recombination dynamics is monitored by probing the transient photobleaching observed on the interband transitions of the semiconducting tubes. This dynamics takes place on a 1 ps time scale which is 1 order of magnitude slower than in graphite. Transient photoinduced absorption is observed for nonresonant probing and is interpreted as a global redshift of the pi-plasmon resonance. We show that the opening of the band gap in semiconducting carbon nanotubes determines the nonlinear response dynamics over the whole visible and near-infrared spectrum.     

并苯纳米环[6]CA及其衍生物的电子结构和光物理性质的密度泛函理论研究

采用密度泛函理论PBE0方法在6-31G(d, p) 基组水平上对比研究并六苯纳米环[6]CA及BN取代纳米环[6]CA-BN的几何结构及电子性质. 同时探讨锂离子掺杂对不同体系的芳香性、前线分子轨道、电子吸收光谱及传输性质的影响. 通过电离势、亲合势及重组能的计算, 预测纳米环体系得失电子的能力及传输性能. 结果表明:[6]CA的能隙很小, BN取代后, 能隙明显增大; 锂离子掺杂到两种纳米环中, 在不明显改变前线分子轨道分布的前提下, 几乎同步降低了最高占据轨道、 最低未占据轨道能级, 锂离子掺杂使载流子传输性能得到很大改善; 电子吸收光谱拟合发现, BN取代使吸收光谱很大程度蓝移, 吸收强度明显减小; 而锂离子掺杂对光谱的强度及吸收范围没有明显影响. 关键词： 碳纳米环 硼氮纳米环 锂离子掺杂 密度泛函理论     

Nitrogen and Boron Co-Doped Carbon Nanotubes Embedded with Nickel Nanoparticles as Highly Efficient Electromagnetic Wave Absorbing Materials

Due to the limitations of impedance matching and attenuation matching,carbon nanotubes(CNTs)employed alone have a weak capacity to attenuate electromagnetic wave(EMW)energy.In this work,B and N co-doped CNTs with embedded Ni nanoparticles(Ni@BNCNTs)are fabricated via an in situ doping method.Compared with a sample without B doping,Ni@BNCNTs demonstrate a superior EMW absorption performance,with all minimum reflection loss values below?20 dB,even at a matching thickness of 1.5 mm.The experimental and theoretical calculation results demonstrate that B doping increases conduction and polarization relaxation losses,as well as the impedance matching characteristic,which is responsible for the enhanced EMW absorption performance of Ni@BNCNTs.     

二硫化钼纳米点中的缺陷辅助载流子俘获超快动力学

二硫化钼纳米点正在成为有潜质的半导体材料用于光电设备的应用.然而,关于对其中激子动力学的研究却很少.本文利用飞秒瞬态吸收光谱学来研究二硫化钼纳米点的载流子动力学.结果显示,缺陷辅助的载流子再复合过程与观测到的动力学相符,通过俄歇散射对光激载流子进行俘获至少存在两种不同俘获速率的缺陷.四个过程参与了载流子驰豫,在受到光激发后,立即在~0.5 ps内载流子冷却,然后大部分载流子被缺陷快速俘获,随着泵浦能量的增加,该过程对应的时间从~4.9 ps增加到~9.2 ps,这可以用缺陷态的饱和来解释.接下来,拥有相对慢的载流子俘获速率的其它类型缺陷对小部分载流子进行俘获,该过程约65 ps.最后,剩余的少量载流子通过直接带间跃迁发生电子-空穴再复合,时间约为1 ns.研究结果可以深入了解二硫化钼纳米点中的载流子动力学基本原理,引导其更多的应用.     

Ultrafast carrier dynamics of Cu2O thin film induced by two-photon excitation

Cuprous oxide (Cu₂O) has attracted plenty of attention for potential nonlinear photonic applications due to its superior third-order nonlinear optical property such as two-photon absorption. In this paper, we investigated the two-photon excitation induced carrier dynamics of a Cu₂O thin film prepared by radio-frequency magnetron sputtering, using the femtosecond transient absorption experiments. Biexponential dynamics including an ultrafast carrier scattering (< 1 ps) followed by a carrier recombination (> 50 ps) were observed. The time constant of carrier scattering under two-photon excitation is larger than that under one-photon excitation, due to the different transition selection rules and smaller absorption coefficient of the two-photon excitation.     

Ultrafast control of slow light in THz electromagnetically induced transparency metasurfaces

In this paper,we experimentally demonstrate ultrafast optical control of slow light in the terahertz(THz) range by combining the electromagnetically induced transparency(EIT) metasurfaces with the cut wire made of P~+-implanted silicon with short carrier lifetime.Employing the optical-pump THz-probe spectroscopy,we observed that the device transited from a state with a slow light effect to a state without a slow light effect in an ultrafast time of 5 ps and recovered within 200 ps.A coupled oscillator model is utilized to explain the origin of controllability.The experimental results agree very well with the simulated and theoretical results.These EIT metasurfaces have the potential to be used as an ultrafast THz optical delay device.     

Investigation of photoelectron action in cubic AgCl emulsion doped with formate ions

In recent years, the formate ion （HCO2^-） as a kind of hole-to-electron converter has attracted much attention of photographic researchers. The formate ions can trap photo-generated holes, eliminate or reduce the electron loss caused by electron-hole recombination in latent image formation process. Through the hole-to-electron conversion, it can also release an extra electron or electron carrier, improving photosensitivity. In this paper the microwave absorption and dielectric spectrum detection technique is used to detect the time evolution behaviour of free photoelectrons generated by 35ps laser pulses in cubic AgCl emulsions doped with formate ions. The influence of different doping conditions of formate ions on the photoelectron decay kinetics of AgC1 is analysed. It is found that when the HCO2^- content is 10^-3mol/mol Ag and the doping position is 90% the electron decay time and lifetime reach their maxima due to the efficient trap of holes by formate ions.     

Electroluminescence from Si/SiGe quantum cascade emitters

Intersubband electroluminescence results are presented from Si/SiGe quantum cascade emitters at 3.2 THz and at temperatures up to 150 K. The effect of adding doping into the active quantum wells was studied in addition to reduced barrier widths from previous measurements. While the current through the sample is increased by the addition of doping, the emitted power is reduced through additional free carrier absorption and Coulombic scattering. Free electron laser measurements confirm the intersubband transitions in the quantum wells of the cascade devices and produce non-radiative lifetimes of 20 ps between 4 and 150 K.     

含氮SW缺陷对单壁碳纳米管电子结构和光学性质的影响

应用第一性原理密度泛函理论研究了单壁碳纳米管中Stone-Wales(SW)缺陷和氮掺杂情况下的电子结构和光学性质.研究发现,含氮SW缺陷单壁碳纳米管体系的总能降低,结合更稳定,且在费米能级附近出现一条半满的杂质带,并且随着氮掺杂位置的不同,掺杂能态出现显著差异.碳管的吸收和反射明显减弱且吸收峰和反射峰在低能区发生红移现象,在能量小于11eV附近均出现杂质特征峰.本文对计算结果进行了分析研究,可望为含氮SW缺陷碳管在光电材料中的应用提供理论依据. 关键词： 单壁碳纳米管 Stone-Wales缺陷 氮掺杂 光学性质     

RIBLLⅡ与CSRe中束流控制系统的设计

介绍了兰州重离子加速器冷却存储环（HIRFL-CSR）的实验环CSRe以及次级束线RIBLLⅡ中束流控制系统的设计。该系统主要采用了Java,COM,Oracle,ARM,DSP,FPGA等技术实现了对磁铁电源的实时、同步控制,已达到对束流的控制。该系统已经运行于现场的束流调试中,并在RIBLLⅡ的束流调试中运行正常、性能稳定。     

Iron-doped titanium dioxide nanotubes: a study of electrical,optical, and magnetic properties

Abstract  

Iron doped titanium oxide nanotubes (TNTs) were synthesized by hydrometallurgical process using a mixture of NaOH and methanol as precipitating and reducing agents, respectively. Nanotubes with a high purity and good aspect ratio are produced as indicated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The characterization data show that high-purity Fe-doped TNTs with diameter around 12–14 nm and length around 400–460 nm are synthesized using this process. The TNTs are found to be in the anatase phase and as the Fe doping is increased, the conductivity increases. UV/VIS data suggest the red shift in the peaks and increased absorption on the account of doping. The studies on microcosmic magnetic properties of the sample with 15% Fe content indicate the component of magnetic moment in the axial direction of nanotubes. Doping of Fe is found to considerably affect the crystallite size, Curie temperature (T _c), DC conductivity (σ), and Raman shifts.     

Comparison of influence of incorporated 3d-, 4d- and 4f-metal chlorides on electronic properties of single-walled carbon nanotubes

In the present work, the channels of single-walled carbon nanotubes were filled with melts of ZnCl₂, CdCl₂, and TbCl₃ by a capillary method with subsequent slow cooling. The detailed study of electronic structure of filled nanotubes was performed using Raman, optical absorption, and X-ray photoelectron spectroscopy. The obtained data are in mutual agreement and it proves that the filling of carbon nanotube channels with all these salts leads to the charge transfer from nanotube walls to the incorporated compounds, thus acceptor doping of nanotubes takes place. It was found out that encapsulated terbium chloride has the largest influence on the electronic properties of carbon nanotubes.