Dimensional dependence of the energy transfer in MBE grown MnS layers

MBE grown MnS layers with different thicknesses have been studied by time resolved photoluminescence spectroscopy. The temporal evolution of the internal Mn²⁺ (3d⁵) luminescence is measured over 3 orders of magnitude in intensity. The decay curves obtained reveal a surprising but distinct dependence on the layer thickness with longer lifetime than thinner layers. The observed non-exponential behavior of those time transients can be well described by an energy diffusion model within the 3d states of the manganese subsystem and a subsequent dipole–dipole energy transfer to radiationless centers.     

On the possibility of direct measurement of the magnetic field-induced phase transition in hematite by means of magnetooptical method

It is shown that a rotation ? and a deformation κ of the optical indicatrix appear during the transverse magnetic field-induced phase transition in hematite. Analytic expressions for ? and κ are deduced from the magnetization-dependent electromagnetic energy in the crystal. It is shown that during the phase transition, induced by increasing the temperature, the electromagnetic energy in the crystal. It is shown that during the phase transition, induced by increasing the temperature, the antiferromagnetic vector L = M₁ - M₂ is rotating from the three-fold C₃ axis toward the basal plane, which implies that the main axis of the optical indicatrix is not aligned in a general case with the magnetic field or the crystallographic axis although the magnetic moment (M₁ + M₂) is always parallel to the field. The linear magnetic birefringence is very sensitive to the magnetic phase in hematite, as described in previous experimental work, but the present analysis shows that a direct determination of the transverse field-induced phase transition can be obtained in hematite, by means of a magnetooptical method, only when large and non-uniform rotation (up to ninety degrees) and variation of the shape of the indicatrix are taken into account.     

Ordering and excitations in the field-induced magnetic phase of Cs3Cr2Br9

Field-induced magnetic order has been investigated in detail in the interacting spin 3/2 dimer system Cs3Cr2Br9. Elastic and inelastic neutron scattering measurements were performed up to H=6 T, well above the critical field H(c1) approximately 1.5 T. The ordering displays incommensurabilities and a large hysteresis before a commensurate structure is reached. This structure is fully determined. Surprisingly, the lowest excitation branch never closes. Above H(c1), the gap increases slowly with the field. An analysis in terms of projected pseudospins is given.     

High resistivity layers of GaAs grown by liquid phase epitaxy

The preparation of high-resistivity undoped GaAs layers is described. The layers were epitaxially grown from the liquid phase on semi-insulating GaAs substrates. Up to 10⁶ Ωcm in resistivity were obtained. The layers are highly compensated. Their temperature behaviour resembles that of Cr-doped semi-insulating bulk material. Additionally it is reported on the doping effect of Cr, Fe, Co, and Ni in the liquid phase epitaxy.     

Superfluid to Mott insulator quantum phase transition in a 2D permanent magnetic lattice

The accessibility of the critical parameters for the superfluid to Mott insulator quantum phase transition in a 2D permanent magnetic lattice is investigated. We determine the hopping matrix element J, the on-site interaction U, and hence the ratio J/U, in the harmonic oscillator wave function approximation. We show that for a range of realistic parameters the critical values of J/U, predicted by different methods for the Bose-Hubbard model in 2D, such as mean field theory and Monte Carlo simulations, are accessible in a 2D permanent magnetic lattice. The calculations are performed for a 2D permanent magnetic lattice created by two crossed arrays of parallel rectangular magnets plus a bias magnetic field.     

The critical thickness of silicon-germanium layers grown by liquid phase epitaxy

Silicon-germanium layers are grown from metallic solution on (100) and (111) silicon substrates. On (111) Si, coherently strained dislocation-free SiGe layers are obtained with thicknesses larger than predicted by the current models of misfit-induced strain relaxation. A comprehensive characterisation by imaging, diffraction, and analytical electron microscopy techniques is carried out to determine the critical thickness, study the onset of plastic relaxation, and explain the particular growth mechanisms leading to an unexpectedly high thickness of elastically strained SiGe layers. A vertical Ge concentration gradient and the formation of step edges on the layers, where lateral strain relaxes locally, explain the high critical thickness. The model of Matthews and Blakeslee is modified in order to match the experimental observations for solution-grown SiGe layers. Received: 29 July 1999 / Accepted: 29 July 1999 / Published online: 27 October 1999     

First-order magnetic phase transition in the tetragonal K2NpO4

Mössbauer effect and susceptibility studies of the tetragonal K₂NpO₄ compound were performed. K₂NpO₄ ordered magnetically at 19.5(5) K by a first-order phase transition. The ordered moment that was derived from H_eff is ≈0.6μ_B. From the isomer shift of the Mössbauer spectra (-57(1) mm/s rel. NpAl₂) it was concluded that the ground state of the Np ion in the specified compound was a ²F_{$\text{5}\text{2}$} Kramer's doublet.     

Observation of the magnetic phase transition in PrCu2 below 58 mK by neutron diffraction

A neutron diffraction experiment on the coupled electron-nuclear compound PrCu₂ has been carried out at mili-Kelvin temperatures. Below 58 mK, several magnetic diffraction peaks have been observed at positions in the reciprocal space represented by G±τ, where G is the reciprocal lattice vector and $\text{τ}\text{= 0.24a}{}^1\text{±0.68c}{}^1$. The peak intensity of one of these diffraction peaks has also been measured as a function of temperature down to 10.5 mK.     

Mri measurements of T1, T2 and D for gels undergoing volume phase transition

Gels consist of crosslinked polymer network swollen in solvent. The network of flexible long-chain molecules traps the liquid medium they are immersed in. Some gels undergo abrupt volume change, a phase transition process, by swelling-shrinking in response to external stimuli changes in solvent composition, temperature, pH, electric field, etc. We report that during volume phase transition changes of NMR longitudinal relaxation time T(1), NMR transverse relaxation time T(2), and diffusion coefficient D of the PMMA gel, and D of the NIPA gel. We describe how the gels were synthesized and the reason of using the snapshot FLASH imaging sequence to measure T(1), T(2), and D. Since T(1), T(2) and D maps have identical field of view and data are extracted from identical areas from their respective maps, these values can be correlated quantitatively on a pixel-by-pixel basis. Thus a complete set of NMR parameters is measured in-situ: the gels are in their natural state, immersed in the liquid, during the phase transition. The results of spectroscopic method agree with that of snapshot FLASH imaging method. For the PMMA gel T(1), T(2) and D decrease when gels undergo volume phase transition between deuterated acetone concentration of 30% and 40%. At its contracted state, T(1) is reduced to a little less than one order of magnitude, T(2) over two orders of magnitude, and D over one order of magnitude, smaller from values of PMMA gel at the swollen state. At an elevated temperature of 54 degrees C the thermosensitive NIPA gel is at a contracted state, with its D reduced to almost one order of magnitude smaller from that of the swollen NIPA at room temperature.     

Optical properties of residual shallow donors in GaN epitaxial layers grown by horizontal LP-MOCVD

Received: 1 May 1998/Accepted: 23 June 1998     

Raman scattering of Zn doped CuGaS2 layers grown by vapor phase epitaxy

Raman spectra for non-site-selectively and site-selectively Zn-doped CuGaS₂ layers grown by vapor phase epitaxy (VPE) were investigated. Although an appearance of characteristic Raman line(s) related with the doped Zn atom was not seen, an enhancement of the Raman intensity ratio of the highest LO mode to the A₁ mode (I_LO/I_A1) was observed. The site-selectively Zn-doped layers with p-type conductivity exhibited larger I_LO/I_A1 ratio compared to those with n-type conductivity. The observed correlation between the I_LO/I_A1 ratio and the peak energy of the photoluminescence characteristic for Zn-doped p-type samples (L emission) suggests that the enhancement of I_LO/I_A1 is due to the increase of Zn atom substituting Ga site (Zn_Ga) which is acting as an acceptor.     

Thermal stability of Li-related 1D defects in ZnSe:Li/GaAs grown by MBE

Curved streak patterns are clearly observed in the azimuth of [1 0 0] when the substrate temperature is heated up to 600°C, suggesting that the one-dimensional Li chains are stable. The growth rates of non-doped ZnSe on Li-doped ZnSe are found to be about 1/2 of that of non-doped ZnSe grown on GaAs. Even when no Li is supplied, the RHEED exhibits clear curved streak patterns. The results indicate that Li atoms segregate onto the topmost surface during the MBE growth, because of high diffusivity of Li, resulting in the formation of 1D array.     

Time-resolved spectroscopy of freestanding GaN layers grown by halide vapour phase epitaxy

Freestanding GaN layers of various thicknesses grown by HVPE have been studied by time-resolved spectroscopy combined with structural and electrical measurements. We have observed an increase of the PL lifetime with increasing layer thickness; however, a saturation of the recombination times has been detected for the GaN layers thicker than 400 μm. We explain the observed thickness-dependent behavior of the decay times by competition of two nonradiative mechanisms; namely, for layers with thickness less than 400 μm the main nonradiative channel is related to the structural defects, while in thicker layers the recombination decay time is limited by impurities and/or vacancies.     

Optical properties of ZnO and ZnO:Ce layers grown by spray pyrolysis

In this paper, zinc oxide (ZnO) and cerium-doped zinc oxide (ZnO:Ce) films were deposited by reactive chemical pulverization spray pyrolysis technique using zinc and cerium chlorides as precursors. The effects of Ce concentration on the structural and optical properties of ZnO thin films were investigated in detail. These films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence (PL) measurements. All deposited ZnO layers at the temperature 450 °C are polycrystalline and indicate highly c-axis oriented structure. The dimension of crystallites depends on incorporation of Ce atoms into the ZnO films. The photoluminescence spectra of the films have been studied as a function of the deposition parameters such as doping concentrations and post grows annealing. Photoluminescence spectra were measured at the temperature range from 13 K to 320 K.     

First order magnetic phase transition in GeCo2O4

The antiferromagnetic compound GeCo₂O₄ exhibits a magnetic phase transition characterized by thermal hysteresis of the susceptibility versus temperature curve and by a diffuse neutron scattering with a small correlation length. The data are compared to the expected first-order phase transition of the n ≥ 4 component vector models.     

Carrier transport mechanisms in the ZnO based heterojunctions grown by MBE

This paper presents a review of models of the current transport in different kind of heterojunctions (HJs) and their characteristics. In order to effectively deduce the dominant electron transport for the HJs based on ZnO or Zn_1?xMg_xO layers grown on Si substrate by MBE a comparison is performed – which type of the HJ exhibits better electrical properties. The current–voltage characteristics for the studied HJs were measured within 280–300 K. The transport properties of the HJs are explained in terms of Anderson model with reference to aforementioned current transport models. It is found, that the mechanisms of current transport for all of the studied HJs are similar. At a low forward voltage bias the tunneling current dominates while at medium voltage bias (0.5–1 V) multitunneling capture-emission prevails with the electron trap located at 0.1–0.25 eV below the bottom of a ZnO (Zn_1?xMg_xO) conduction band. Beyond this voltage bias space charge limited current governs the current transport.     

Defects in Ce-doped LuAG and YAG scintillation layers grown by liquid phase epitaxy

The single crystalline Lu₃Al₅O₁₂ (LuAG) and Y₃Al₅O₁₂ (YAG) garnet layers doped by Ce³⁺ ions were grown by the liquid phase epitaxy from the flux. The effect of the flux composition, growth conditions, and substrate polishing on the layer morphology, creation of defects, and on optical and emission properties of layers was studied. The defects typical of the epitaxial growth are discussed.