Theory of alkyl-terminated silicon quantum dots

We have carried out a series of ab initio calculations to investigate changes in the optical properties of Si quantum dots as a function of surface passivation. In particular, we have compared hydrogen-passivated dots with those having alkyl groups at the surface. We find that, while on clusters with reconstructed surfaces complete alkyl passivation is possible, steric repulsion prevents full passivation of Si dots with unreconstructed surfaces. In addition, our calculations show that steric repulsion may have a dominant effect in determining the surface structure and eventually the stability of alkyl-passivated clusters, with results dependent on the length of the carbon chain. Alkyl passivation weakly affects optical gaps of silicon quantum dots, while it substantially decreases ionization potentials and electron affinities and affects their excited state properties. On the basis of our results, we propose that alkyl-terminated quantum dots may be size selected, taking advantage of the change in ionization potential as a function of the cluster size.     

Dimensionality dependence of optical properties and quantum confinement effects of hydrogenated silicon nanostructures

The excited state properties of linear, planar, and spherical hydrogenated silicon nanostructures are studied systematically with use of a time-dependent Hartree-Fock (TDHF) approach with a semiempirical Hamiltonian. The calculated optical gaps decrease significantly from linear, planar, to spherical silicon structures, showing that the optical gap is dimensionality dependent and hence it can be varied by solely managing the shape of the nanostructures. Remarkably, the calculated exciton sizes of the lowest dipole-allowed excited states for both silicon chains and planes are approximately 26 A, revealing that the quantum confinement effect should be significantly enhanced when the sizes of silicon nanostructures are smaller than this value but not dependent on the dimensionality. A similar trend is also observed for hydrogenated silicon spherical clusters.     

Optically activated functionalization reactions in Si quantum dots

Using ab initio calculations, we have studied the influence of optical activation on functionalization reactions of silicon quantum dots with unsaturated hydrocarbons. We find that the energy barrier for the replacement of silicon-hydrogen with silicon-carbon bonds is dramatically reduced if the silicon dot is optically excited. These results provide an explanation for recent experiments on optically excited porous silicon. In addition, our calculations point at the existence of an intermediate spin-polarized state formed by the dot and an alkene or alkyne, upon relaxation after absorbing a photon. This state could be detected experimentally, by, for example, electron spin resonance measurements. Based on the results of our calculations as a function of the dot size, varied from 0.8 to 1.5 nm, we propose that light activated reactions could be used to functionalize and size select silicon quantum dots at the same time.     

Molecular dynamics effects on luminescence properties of oligothiophene derivatives: a molecular mechanics-response theory study based on the CHARMM force field and density functional theory

CHARMM force field parameter values for a class of oligothiophene derivatives have been derived with reference to density functional theory/B3LYP potential energy surfaces. The force field parametrization of these luminescent conjugated polyelectrolytes includes the electronic ground state as well as the strongly light absorbing first excited state. In conjunction with quantum chemical response theory calculations of transition state properties, a molecular dynamical model of the Stokes shift is obtained. The theoretical model is benchmarked against experimental data recorded at room temperature which refer to sodium salts of p-HTAA and p-FTAA with distilled water as a solvent. For p-HTAA the theoretically predicted Stokes shift of 112 nm is in good agreement with the experimental result of 124 nm, given the approximations about exciton localization that were introduced to obtain a force field for the excited state.     

Silicon Nanocrystals and Silicon‐Polymer Hybrids: Synthesis,Surface Engineering,and Applications

Silicon nanocrystals (Si‐NCs) are emerging as an attractive class of quantum dots owing to the natural abundance of silicon in the Earth's crust, their low toxicity compared to many Group II–VI and III–V based quantum dots, compatibility with the existing semiconductor industry infrastructure, and their unique optoelectronic properties. Despite these favorable qualities, Si‐NCs have not received the same attention as Group II–VI and III–V quantum dots, because of their lower emission quantum yields, difficulties associated with synthesizing monodisperse particles, and oxidative instability. Recent advancements indicate the surface chemistry of Si‐NCs plays a key role in determining many of their properties. This Review summarizes new reports related to engineering Si‐NC surfaces, synthesis of Si‐NC/polymer hybrids, and their applications in sensing, diodes, catalysis, and batteries.     

The role of surface defects in multi-exciton generation of lead selenide and silicon semiconductor quantum dots

Multi-exciton generation (MEG), the creation of more than one electron-hole pair per photon absorbed, occurs for excitation energies greater than twice the bandgap (E(g)). Imperfections on the surface of quantum dots, in the form of atomic vacancies or incomplete surface passivation, lead to less than ideal efficiencies for MEG in semiconductor quantum dots. The energetic onset for MEG is computed with and without surface defects for nanocrystals, Pb(4)Se(4), Si(7), and Si(7)H(2). Modeling the correlated motion of two electrons across the bandgap requires a theoretical approach that incorporates many-body effects, such as post-Hartree-Fock quantum chemical methods. We use symmetry-adapted cluster with configuration interaction to study the excited states of nanocrystals and to determine the energetic threshold of MEG. Under laboratory conditions, lead selenide nanocrystals produce multi-excitons at excitation energies of 3 E(g), which is attributed to the large dielectric constant, small Coulomb interaction, and surface defects. In the absence of surface defects the MEG threshold is computed to be 2.6 E(g). For lead selenide nanocrystals with non-bonding selenium valence electrons, Pb(3)Se(4), the MEG threshold increases to 2.9 E(g). Experimental evidence of MEG in passivated silicon quantum dots places the onset of MEG at 2.4 E(g). Our calculations show that the lowest multi-exciton state has an excitation energy of 2.5 E(g), and surface passivation enhances the optical activity of MEG. However, incomplete surface passivation resulting in a neutral radical on the surface drives the MEG threshold to 4.4 E(g). Investigating the mechanism of MEG at the atomistic level provides explanations for experimental discrepancies and suggests ideal materials for photovoltaic conversion.     

Multicoordinational excited state twisting of indan-1,3-dione derivatives

Excited state relaxation of indan-1,3-dione derivatives with different substituents attached to the phenyl ring and with the bridged amino group was investigated by means of the steady-state fluorescence and femtosecond time-resolved absorption pump–probe spectroscopy. Bridging of the amino group increases the fluorescence quantum yield and the excited state lifetime. Analysis of the results indicates that the phenyl ring twisting around a single central bond leads to the nonradiative state formation and to subsequent fast relaxation to the ground state. Double bond twisting takes place in molecules with the bridged amino group and causes a large Stokes shift and slightly slower excited state relaxation.     

A theoretical study of the electronic properties of hydrogenated spherical-like SiC quantum dots with C-rich and Si-rich compositions

Quantum dots have many potential applications in opto-electronics, energy storage, catalysis, and medical diagnostics, silicon carbide quantum dots could be very attractive for many biological and technological applications due to their chemical inertness and biocompatibility, however, there are seldom theoretical studies that could boost the development of these applications. In this work, the electronic properties of hydrogenated spherical-like SiC quantum dots with C-rich and Si-rich compositions are investigated using density functional theory calculations. The quantum dots are modeled by removing atoms outside a sphere from an otherwise perfect SiC crystal, the surface dangling bonds are passivated with H atoms. Our results exhibit that the electronic properties of the SiC-QD are strongly influenced by their composition and diameter size. The energy gap is always higher than that of the crystalline SiC, making these SiC QD's suitable for applications at harsh temperatures. The density of states and the energy levels show that the Si-rich quantum dots had a higher density of states near the conduction band minimum, which indicates better conductivity. These results could be used to tune the electronicproperties of SiC quantum dots for optoelectronic applications.     

Femtosecond ligand/core dynamics of microwave-assisted synthesized silicon quantum dots in aqueous solution

A microwave-assisted reaction has been developed to produce hydrogen-terminated silicon quantum dots (QDs). The Si QDs were passivated for water solubility via two different methods: hydrosilylation produced 3-aminopropenyl-terminated Si QDs, and a modified St?ber process produced silica-encapsulated Si QDs. Both methods produce water-soluble QDs with maximum emission at 414 nm, and after purification, the QDs exhibit intrinsic fluorescence quantum yield efficiencies of 15 and 23%, respectively. Even though the QDs have different surfaces, they exhibit nearly identical absorption and fluorescence spectra. Femtosecond transient absorption spectroscopy was used for temporal resolution of the photoexcited carrier dynamics between the QDs and ligand. The transient dynamics of the 3-aminopropenyl-terminated Si QDs is interpreted as a formation and decay of a charge-transfer (CT) excited state between the delocalized π electrons of the carbon linker and the Si core excitons. This CT state is stable for ~4 ns before reverting back to a more stable, long-living species. The silica-encapsulated Si QDs show a simpler spectrum without CT dynamics.     

Spectroscopy,photophysics and photochemistry of 1,3-diketoboronates: IV: Luminescence spectroscopic investigations of 2-naphthyl-substituted 1,3-diketoboronates

Aryl-substituted 1,3-diketoboronates exhibit high fluorescence quantum yields. In the case of 2-naphthyl-substituted 1,3-diketoboronates, excitation-wavelength-dependent luminescence spectra and luminescence-wavelength-dependent excitation spectra were recorded. In polar solvents the compounds exhibit large Stokes shifts and the fluorescence lifetimes depend on the excitation and fluorescence wavelengths. The multiple fluorescence behaviour is interpreted by assuming the existence of excited non-equilibrated rotamers with different photophysical properties and high dipole moments in the excited state. The relaxation of polar solvents around these high polar species contributes to the broadening of the fluorescence bands and to the fluorescence-wavelength dependence of the lifetimes caused by the fluorescence of incompletely solvent-relaxed species.     

Interaction between excitons determines the non-linear response of nanocrystals

The non-linear response of semiconductor quantum dots is investigated using three-pulse photon echo peak shift (3PEPS) experiments and simulations. The third-order non-linear response is modeled by a three-level system, utilizing Brownian oscillators to model the line-broadening functions. Our results show that biexciton formation and exciton–exciton scattering significantly influence the non-linear response of quantum dots. The exciton to biexciton excited state absorption pathways are also investigated for quantum dots with different crystal structures. Our calculations suggest that the probability of excited state absorption to the biexcitonic state is higher for zinc-blende structured nanocrystals.     

Formation and relaxation of excited states in solution: a new time dependent polarizable continuum model based on time dependent density functional theory

In this paper a novel approach to study the formation and relaxation of excited states in solution is presented within the integral equation formalism version of the polarizable continuum model. Such an approach uses the excited state relaxed density matrix to correct the time dependent density functional theory excitation energies and it introduces a state-specific solvent response, which can be further generalized within a time dependent formalism. This generalization is based on the use of a complex dielectric permittivity as a function of the frequency, epsilonomega. The approach is here presented in its theoretical formulation and applied to the various steps involved in the formation and relaxation of electronic excited states in solvated molecules. In particular, vertical excitations (and emissions), as well as time dependent Stokes shift and complete relaxation from vertical excited states back to ground state, can be obtained as different applications of the same theory. Numerical results on two molecular systems are reported to better illustrate the features of the model.     

激发态分子内质子转移荧光探针的研究进展

荧光探针凭借其选择性好、灵敏度高、响应时间快、易于操作和检测限低等优点得到了广泛的关注。 激发态分子内质子转移(ESIPT)化合物具有特殊的激发态光物理过程,其显著的光物理性质是有较高的荧光量子产率及大的斯托克斯位移。 对于荧光分子而言,较大的斯托克斯位移可以减少自吸收和由内滤效应产生的干扰,增强分子的耐光性,有利于荧光的发射。 本文对ESIPT荧光探针检测离子(包括金属阳离子和阴离子)、中性小分子和生物大分子的研究进展进行阐述,并对ESIPT荧光分子的存在问题和应用前景进行评述。     

Exciton-phonon coupling and disorder in the excited states of CdSe colloidal quantum dots

We study the origin of the spectral line shape in colloidal CdSe nanocrystal quantum dots. The three-pulse photon echo peak shift (3PEPS) data reveal a temperature-independent fast decay, obscuring the quantification of the homogeneous linewidth. The optical gap and Stokes shift are found to have an anomalous behavior with temperature, which is size, capping group, and surrounding polymer matrix independent. Using these results and combining them with simulations, we discuss the role of exciton-phonon coupling, static inhomogeneity, exciton fine structure, and exciton state disorder in the linewidth of the nanocrystal. In particular, our analysis shows that the disorder due to surface imperfections and finite temperature effects, as well as the relaxation within the fine structure, can have significant impact on the steady-state absorption spectrum, 3PEPS data, and dephasing processes.     

Optical properties of silicon clusters in the presence of water: a first principles theoretical analysis

We investigate the impact of water on the optical absorption of prototypical silicon clusters. Our clusters contain 5 silicon atoms, tetrahedrally coordinated and passivated with either hydrogen or oxygen. We approach this complex problem by assessing the contributions of three factors: chemical reactivity, thermal equilibration, and dielectric screening. We find that the silanone (Si=O) functional group is not chemically stable in the presence of water and exclude this as a source of significant red shift in absorption in aqueous environments. We perform first principles molecular dynamics simulations of the solvation of a chemically stable, oxygenated silicon cluster with explicit water molecules at 300 K. We find a systematic 0.7 eV red shift in the absorption gap of this cluster, which we attribute to thermally induced fluctuations in the molecular structure. Surprisingly, we find no observable screening impact of the solvent, in contrast with consistent blue shifts observed for similarly sized organic molecules in polar solvents. The predicted red shift is expected to be significantly smaller for larger Si quantum dots produced experimentally, guaranteeing that their vacuum optical properties are preserved even in aqueous environments.     

Emission energies and photophysical properties of ladder oligo(p-aniline)s

Emission properties and the photophysics of three ladder oligo(p-aniline)s; namely 5,11-diethyl-6,12-dimethylindolo[3,2-b]carbazole (DIMER 2P), 14-ethyl-5,8-dihydro-diindolo[3,2-b:2′,3′-h]carbazole (TRIMER 2P), and 5,8,14-triethyl-diindolo[3,2-b:2′,3′-h]carbazole (TRIMER 3P) are presented. The optimization (relaxation) of the first singlet excited electronic state (S₁) has been done using the restricted configuration interaction (singles) (RCIS/6-31G*) approach. The excitation to the S₁ state does not cause important changes in the geometrical parameters of the compounds, as is experimentally corroborated by the small Stokes shifts. Emission energies from the relaxed excited states have been obtained from TDDFT calculations performed on the S₁ optimized geometries and have been correlated with the corresponding fluorescence spectra of the derivatives dissolved in dichloromethane. A good agreement has been found between TDDFT emission energies and the (0,0) fluorescence bands. As predicted from theoretical calculations, all compounds exhibit small Stokes shift, which testify the rigidity of these ladder compounds. Moreover, this theoretical approach provides a good evaluation of the bathochromic shifts caused by the increase in the conjugation length or by the presence of alkyl chains on the nitrogen atoms. Finally, the fluorescence quantum yield and lifetime of the compounds in dichloromethane have been obtained. From these data, the radiative and nonradiative rate constants of the deactivation of the S₁ state have been determined.     

Theoretical Insight into the Origin of Large Stokes Shift and Photophysical Properties of Anilido‐Pyridine Boron Difluoride Dyes

The geometric and electronic structures and photophysical properties of anilido‐pyridine boron difluoride dyes 1 – 4 , a series of scarce 4,4‐difluoro‐4‐bora‐3a,4a‐diaza‐s‐indacene (BODIPY) derivatives with large Stokes shift, are investigated by employing density functional theory (DFT) and time‐dependent DFT (TD‐DFT) calculations to shed light on the origin of their large Stokes shifts. To this end, a suitable functional is first determined based on functional tests and a recently proposed index—the charge‐transfer distance. It is found that PBE0 provides satisfactory overall results. An in‐depth insight into Huang–Rhys (HR) factors, Wiberg bond indices, and transition density matrices is provided to scrutinize the geometric distortions and the character of excited states pertaining to absorption and emission. The results show that the pronounced geometric distortion due to the rotation of unlocked phenyl groups and intramolecular charge transfer are responsible for the large Stokes shift of 1 and 2 , while 3 shows a relatively blue‐shifted emission wavelength due to its mild geometric distortion upon photoemission, although it has a comparable energy gap to 1 . Finally, compound 4 , which is designed to realize the rare red emission in BODIPY derivatives, shows desirable and expected properties, such as high Stokes shift (4847 cm^?1), red emission at 660 nm, and reasonable fluorescence efficiency. These properties give it great potential as an ideal emitter in organic light‐emitting diodes. The theoretical results could complement and assist in the development of BODIPY‐based dyes with both large Stokes shift and high quantum efficiency.     

First principles calculation of the optical properties and stability of hydrogenated silicon clusters

Optical properties and stability of hydrogenated silicon clusters are investigated using density functional pseudopotential calculation. The dipole transitions between the band-edge orbitals are allowed, in contrast to the indirect gap in bulk silicon. Evolution of a small amount of hydrogen atoms enhances the dipole transition, increasing the photoluminescence intensity. Further dehydrogenation creates gap states due to dangling bonds, which may decrease the photoluminescence intensity via nonradiative recombination processes. The Stokes shift is also estimated by calculating the relaxed structure of the excited state within the local density approximation. © 1994 John Wiley & Sons, Inc.     

Reductive deposition of Rh nanostructures on n-type porous silicon: X-ray absorption and X-ray excited optical luminescence studies

22Porous silicon (PS) prepared from an n-type Si(100) wafer was utilized as a reducing agent and a nanosubstrate for the reduction of rhodium complex ions [RhCl6]3- from aqueous solution to metallic Rh nanostructures on the surface of the n-type PS. The morphology and the electronic properties of the PS layers as well as the rhodium nanostructures were studied by field emission scanning electron microscopy, X-ray absorption fine structures spectroscopy, and X-ray excited optical luminescence (XEOL). The average particle size of Rh nanostructures on PS was estimated to be approximately 7 nm by the X-ray diffraction pattern. The specificity ofXEOL allowed for the investigation of the effect of Rh nanostructures on the optical properties of PS.