Ion beam mixing of silicon-tin multilayers

Silicon and tin multilayers of total thickness 200 nm have been deposited at room temperature on beryllium and glass plate substrates under high vacuum (<5. 10^?7 mbar). The average atomic tin fraction of the whole layer varied from 0.12 to 0.60. The samples were irradiated at room temperature with Xe⁺ ions of 900 keV energy with fluences of 1.10¹⁵ to 2.10¹⁶ ions. cm^?2. Rutherford backscattering spectrometry (RBS) was used to check overall composition before irradiation. After irradiation, a substitutional Sn site was evidenced by means of¹¹⁹Sn conversion electron Mössbauer spectroscopy (CEMS), the relative population of which depends on composition and irradiation fluence. Transmission electron microscopy (TEM) was used to monitor the evolution of the samples with irradiation fluence. Electrical measurements show semiconductor behaviour of the mixed multilayers with electrical resistivity ranging from 10² to 10^?3 Ω.cm as a function of composition.     

Ion beam mixing and liquid interdiffusion

Abstract

A characteristic of ion mixing in the low temperature portion of the thermally assisted ion mixing regime is that the activation energy obtained from most experiments is in the range of 0.1 to 0.3 eV. These values are typically a factor of 4 to 10 lower than the vacancy migration energy of most elements. This discrepancy is maintained even when the ion mixing data is contrasted to the more comparable data from concentrated homogeneous alloys. It appears that an explanation of the ion mixing activation energy is not possible by radiation enhanced diffusion (RED) where, at the low temperature end of RED, defect annihilation is by direct vacancy-interstitial recombination and the predicted activation energy is Q = 0.5 E^M _v

In an attempt to understand the origin of the low activation energies obtained during ion mixing we have performed calculations of the mutual diffusion coefficients in binary liquid mixtures. A hard sphere fluid model based on the kinetic gas theory of Enskog was used. The model was corrected to agree with molecular dynamic calculations of liquid state diffusion and included thermodynamic driving forces. The calculations resulted in temperature dependent mixing curves which are in good agreement with ion mixing experiments and suggested that the temperature rise in the thermal spike approximately ranged between 1000 and 4000 K.     

Ion beam mixing of FeNi3 multilayers

An Fe/Ni multilayer of overall FeNi₃ composition, prepared by Joule effect deposition, has been irradiated with 200 keV krypton ions at a nominal dose of 5×10¹⁵ions/cm² to induce mixing at the interface. Depth profiling AES, RBS, XRD (glancing angle) and CEMS have been used to characterize the samples before and after irradiation and also after subsequent mild annealing. In the final structure, we have recognized the presence of embryos of an ordered FeNi₃ superlattice.     

Ion beam mixing of bimetallic systems: CEMS studies

The effect of irradiation with argon, krypton and xenon energetic ions of bimetallic systems containing a Mössbauer active element is reviewed to show the contribution of conversion electron Mössbauer spectroscopy (CEMS) to the studies of the ion-beam mixing mechanisms and to the structural characterization of mixed interfaces. In the field of ion beam mixing, CEMS is often used to complement the more used RBS, TEM, XRD, XPS, SIMS, AES and SEM analytical techniques. Recent results concerning the Fe/Pd, Fe/Ni and Fe/Al couples mixed with argon and krypton ions are presented and discussed.     

Ion beam mixing of Al/Fe binary systems

Ion beam mixing of Al layers on Fe and Fe layers on Al are studied by irradiation with 200 keV Xe⁺-ions at room temperature as a function of the thickness of the top layer and of the ion fluence from 5×10¹⁵ to 7.5×10¹⁶ions/cm². Deconvolution procedures are needed to separate the influence of the ion sputter profiling by AES from the ion beam induced mixing effects. Auger electron spectroscopy data reveal that the mixing induced diffusivity ought to be considered as a function of concentration. The diffusion coefficients are evaluated by the Boltzmann-Matano method. A strong dependence of the diffusion coefficients and also the mixing efficiencies from the ion dose, the depth of the interface and the nuclear energy deposition were observed. Results are discussed in terms of the diffusional and collisional mixing as well as chemical affinity of both Fe and Al.     

Ion beam mixing of Pt marker layers in Al

We have studied the ion beam mixing of Pt marker layers which were 1 nm thick and buried 55 nm deep in Al. The samples were irradiated with Ne, Ar, Kr, Xe, and Pb ions with ion energies ranging from 75 to 600 keV and damage energy densities from 0.17 to 2.0 keV/nm. The depth distributions of both the implanted ions and the marker atoms were measured with Rutherford backscattering spectrometry. The experimental mixing efficiency of = 0.856(24) nm⁵/keV is about ten times as high as was to be expected from the ballistic model and the local spike models. We suggest a connection between this unexpectedly high mixing efficiency and the vanishing primary solid solubility of the marker element in the host matrix.     

Ion beam and infrared analysis of medieval stained glass

Ion beam analysis and Fourier Transform Infrared (FTIR) spectroscopy were used to characterize 15^th century stained glass fragments from Batalha Monastery. This information is being used to help establish their origins as well as the art schools and artistic trends involved in the manufacture of these panels.As the preservation of art objects and artefacts is a major issue, the combination of Rutherford Backscattering Spectrometry (RBS) and Particle Induced X-ray Emission (PIXE) with FTIR spectroscopy aims at determining non-destructively the elemental compositions of the bulk glass and painted layers as well as identifying corrosion products. Elemental spatial distributions were obtained with a nuclear microprobe, and compared with the results of micro-FTIR.Although the bulk composition determined is consistent with the glass manufacturing practices of the Middle Ages, the grisailles were found to have a significant Zn concentration, at variance with those same reported practices.The analysis also revealed a surface layer impoverished in Si and K and enriched in Ca. That may be due to the migration of Ca ions to the surface, a known glass corrosion process consistent with the presence of CaCO₃, as indicated by micro-FTIR. PACS 81.05.Kf; 33.20.Ea; 82.80     

Ion beam induced atomic mixing in Fe/Al bilayered samples

Atomic mixing of Fe/Al bilayered samples induced by an energetic xenon beam has been studied by RBS-TEM and sheet resistivity measurements. Mixing is detected at 2.5 × 10¹⁵ Xe/cm² and then proceeds up to 2 × 10¹⁶ Xe/cm². A blocking effect of the mixing for larger doses is observed. Homogeneous concentration is not obtained across the sample. Instead a pronounced graded composition is reached. Several explanations of the mixing process and the subsequent blocking effect are suggested: — sharp gradients in the nuclear energy deposition profile which decrease with dose — grain growth phenomena — precipitation of crystalline xenon acting as efficient annihilation sinks for vacancies.     

Ion beam mixing induced by electronic energy deposition in Fe-Si multilayers

Abstract

Spectroscopic properties of Ce³⁺ ions in GdAlO₃ crystal are presented. At least three Ce³⁺ nonequivalent centres (multisites) are present in this crystal. Energy transfer from the Ce³⁺ main in the UV emitting centres to the Ce³⁺ green emitting centres is observed. Ce³⁺ fluorescence decays are either fast (1.5–20 ns) or slower due to complicated processes of energy transfer and migration (Ce³⁺)_i → (Gd³⁺)_n-steps → (Ce³⁺)_j (energy transfer through Gd³⁺ sublattice).     

Ion beam sputtering - the effect of incident ion energy on atomic mixing in subsurface layers

Secondary ion mass spectrometric methods were used to study the effect of incident ion energy on atomic mixing in subsurface layers. A Ta₂O₅ film containing a 50 A ^3lP-rich layer 230 A below the surface was depth profiled for phosphorus using normal incidence 160 primary particles of various energies (1.75 to 18.5 keV). A pronounced energy effect was observed in the widths of 31^P profiles generated by >4 keV ¹⁶O. For 18.5 keV ¹⁶O, the observed profile contained two distinct components-the 31^P-rich layer and the 31^P recoil distribution. This later condition, prevails when the peak of the incident ion damage distribution occurs at a depth which equal or exceeds the distance from the surface to the 31^P-rich layer. The desirable primary ion beam energy for characterizing the true elemental distribution is dictated by the shape and location of the layer to be profited. In most instances, a low energy beam is preferred.     

Ion beam crystallization

After the successful exploitation of electron cooling in several heavy ion storage rings the possibility of generating crystalline ion beams gained the interest of particle accelerator physicists. New cooling methods, such as laser cooling, give further opportunity to reach ultra cold system of particles necessary for the state transition to the crystalline configuration. Crystalline beams will give insight into a completely new research field, reaching higher standards in precision measurements and techniques. The applicative potentialities of crystalline beams justify a careful investigation on this subject. The conceptual design of a low-energy heavy-ion storage ring, called CRYSTAL, proposed for the experimental demonstration of crystalline beams at Legnaro LNL is presented. This revised version was published online in August 2006 with corrections to the Cover Date.     

离子束修形技术

 离子束修形技术具有精度高、确定性好等优点,应用越来越广泛。介绍了离子束修形技术的原理和特点,以及国外离子束修形技术的发展历程和现状,并介绍了国内离子束修形技术的发展现状。针对当前离子束修形技术的研究热点,如中高频误差控制技术、驻留时间求解算法和加工工艺等方面,综述了国内外的研究现状。     

Ion beam mixing and sputtering of Kr-irradiated TiN films measured with RBS,RNRA, and PIXE

Thin titanium nitride films of 10–300 nm thickness were irradiated with ⁸⁴Kr ions of 80–700 keV energy and fluences ranging from 10¹⁶ cm² to 2×10¹⁷ cm². Sputter yields (Y=0.4–1.0) and mixing rates (k=0.05–0.5 nm⁴) were determined using the depth profiling methods RBS, RNRA, and PIXE. While the sputter yields agree well with the modified Sigmund theory, the energy dependence of the mixing rates cannot be explained by standard models.     

Ion beam exposure of resists

Problems caused by the statistical variation of the number of exposing ions in ionbeam lithography are discussed. Using Poisson statistics, the minimum dose required for exposure as a function of resist sensitivity and minimum feature size is calculated. It is found that, although ion-beam resists show a very high sensitivity of 10¹¹ to 10¹³,cm^–2, it would be possible to use still more sensitive resists and obtain submicron linewidth resolution.     

基于四波混频过程的纠缠光放大

双模纠缠态是量子信息领域一种重要的量子资源,本文基于四波混频过程从理论上提出了对双模纠缠态的单个模式(单模放大方案)和对双模纠缠态的两个模式(双模放大方案)的放大.利用光学分束器模型来模拟在光学传输过程中损耗引入的真空场噪声,利用部分转置正定判据分析了两种不同的放大方案中四波混频过程的增益对初始双模纠缠态的纠缠程度的影响.结果表明,在特定的损耗情况下,两个方案中初始双模纠缠态的纠缠度都随增益的增大而减小,直至消失,且双模放大方案中初始双模纠缠态纠缠消失得比单模放大方案中更快.本文的理论结果为实验上实现基于四波混频过程的双模纠缠态的放大奠定了理论基础.     

Ion bombardment enhanced mixing op silver layers on silicon

Abstract - Silver films evaporated onto silicon substrates were sputtered by 35 keV Ar⁺ ions at different fluences and the evolution of the Ag depth profile was monitored by means of high resolution Rutherford backscattering. Evidence for bombardment-induced intermixing was found. Radiation-enhanced diffusion does not appear to be a major mechanism but at this stage we cannot determine the precise nature of the dominating mechanism.     

Ion beam contacting of p-type GaP

Acta physica Academiae Scientiarum Hungaricae - Be-ion implantation into Au layers deposited on p-type GaP is used for making ohmic contacts. Be and Ga concentration profiles are measured by SIMS...     

Ion beam modification of silicide-silicon interfaces

We have modified the contact interface between Pd₂Si and n-Si by ion implantation and investigated the effect of the implantation on Schottky barrier height and rate of silicide formation by electrical current-voltage measurements and Rutherford backscattering spectroscopy. Various ions, As. P, B. O and Si at 50 keV and up to a dose of 5 × 10¹⁴ ions/cm² were implanted into Si wafers before the Pd-deposition to form Pd₂Si. In the case of As and P, the implantation showed a large erect on the subsequent Pd₂Si formation; the formation is enhanced in the as-implanted samples, but it is retarded if an annealing at 600°C precedes the Pd-deposition. Silicide formation was found generally to help reduce the implantation damage (with or without the 600°C annealing) and showed improvements on the electrical characteristics of the contact interface. Consumption of the entire implanted region by silicide formation is found necessary for obtaining a good diode performance. In the case of As implantation, a lowering of the Schottky barrier height of Pd₂Si has been observed.     

宽束冷阴极离子源分时中和技术的研究

离子束辅助镀膜沉积过程中,绝缘薄膜表面的电荷积累效应严重影响了薄膜质量。通过对宽束冷阴极离子源引出栅部分的改进,采用分时引出电子和离子方法,使正负电荷中和,以消除薄膜表面的放电现象,并对引出电子束的束流密度、能量、发射角等参数进行了测试。实验结果表明：在引出电压为600V时,电子的平均能量为100eV左右;引出电子束的发射角可以达到±40°,在±15°范围内的束流密度波动小于±5%。引出电子的束流密度较同参数下的离子束流密度小,通过调节脉冲电源的占空比,可达到很好的中和效果。     

Ion beam application in genetic modification

People pay little attention to the interaction between low-energy ions and matter compared to that of high-energy ions. It is even more unusual to find studies of the interaction of low-energy ions and complicated organisms. The discovery of bioeffects induced by ion implantation has, however, opened a new branch in the field of ion beam applications in the life sciences. This paper reports recent advances in research on the role of low-energy ions in genetic modification