Trap distribution changes in quenched KCl by heating or pressure

Pure Potassium chloride, when quenched rapidly from melt shows pronounced glow peak at 250°K. The intensity of the glow peak has been found to decrease by heating the specimen to around 450°K, or by subjecting it to pressure. A qualitative interpretation of these effects has been offered on the basis of quenched —in cation —anion vacancy pairs.     

Photostimulated thermoluminescence of x-irradiated NaCl

The thermoluminescence and photostimulated thermoluminescence of X-ray coloured NaCl crystals has been studied, together with the thermal annealing of F, F′ and M centres. Three glow peaks centred at 315, 341 and 348°K are obtained in the temperature range 300–400°K. The first peak (315°K) is ascribed to electron trapping by Cu²⁺ centres formed by X-irradiation. The other peaks (314 and 348°K) are related to the thermal annealing of M and F centres, respectively.     

A thermoluminescence study of defect centres in MgO

Thermoluminescence glow curves are a fairly good representation of the different defect centres in MgO produced by γ or reactor irradiation. The glow peaks at 370, 440, 485 and 545 K have been found to be due to hole trapped centres. The 370 K peak has been found to be due to holes released from V_M centres (hole trapped at action vacancy associated with a neighbouring impurity ion). The 665 K peak in γ-irradiated MgO is due to charge transfer between the adsobred oxygen ions and surface defect centres. The F-type centres produced on reactor irradiation (neutron and γ) and on quenching from high temperatures before γ-irradiation are also found to give thermoluminescence peaks at temperatures higher than 560 K. It has also been found that reactor irradiation partially annihilates the trapping centres which are responsible for lower temperature glow peaks.     

Electric field effect on the luminescence of KI:T1

Thermoluminescence of KI: T1, X- or β-irradiated at T ?77°K shows two main peaks at 105°K and 170°K. They are respectively attributed to the recombination of mobile V_K centres with T1^O centres and to the recombination of thermally released electrons from T1^O centres with T1²⁺ centres. Similar experiments performed under static electric fields (E <40kV cm^-1) show that the intensity of the second glow peak is strongly reduced. The relative intensity variation is anticorrelated with the intensity of glow peaks occurring at T > 230 °K. We suggest that in the temperature range in which T1^O centres are thermally ionised, the effect of the electric field is to favour the retrapping of these electrons on other traps (still unknown). Irradiation doses also play an important role and their effects are studied at T = 77 °K and T = 200 °K.     

Annealing of γ-ray irradiated lithium compensated p-type silicon

Abstract

Annealing behavior of electrical properties and photoluminescence spectra both at 77 °K in electron-irradiated melt-grown n-GaAs were investigated. Defects electrically active in the Hall mobility and carrier removal anneal through two stages centered at 250° and 460 °K. From the temperature dependence of carrier concentration the existence of a defect level located near 0.15 eV below the conduction band is supposed. Several emission bands are resolved at 1.51, 1.47, 1.415, 1.305 and ～1.2 eV in photoluminescence experiments. Electron irradiation (1.5–2.0 MeV) causes a remarkable decrease in emission intensity of 1.51 and ～1.2 eV bands. Recovery of emission intensity occurs remarkably when samples are annealed to 520 °K which would correspond to the 460 °K annealing stage for carrier concentration and Hall mobility. The 250 °K annealing stage is not observed in photoluminescence experiments. The 1.415 eV peak appears clearly after irradiation and grows remarkably with the 520 °K annealing, especially in Si-doped samples, resulting in large reverse annealing. This band is tentatively speculated to be a complex of Si on As site with As vacancy. Moreover, in samples doped with Te a new emission band at 1.305 eV (9500 Å) is observed after 470°–620 °K annealing.     

The thermoluminescence (TL), phosphorescence and cryoluminescence of n-type hexagonal (6H) SiC crystals

The low temperature (down to liquid helium temperature) TL, phosphorescence and cryoluminescence of n-type 6H SiC crystals is described. The crystals contained nitrogen as the major impurity at concentrations of about 10¹⁶ cm^-3. The glow curves exhibited peaks at about 25, 45, 70 and 90°K (in addition to a peak at 250°K). Thermal activation energies for the above peaks ranged between 0.02 and 0.14 eV (0.30 eV for the 250°K peak). These are much lower than energies reported earlier for nitrogen donor levels in 6H SiC. The values obtained for the 70–90°K peaks (0.08–0.14 eV) fit quite well those obtained by electrical transport measurements and Raman scattering.The crystals exhibited strong phosphorescence even at liquid helium temperature. This was shown to be only partly due to thermal release from traps, the other components being due to pair-recombination and optical release from the shallow traps by the black body radiation (BBR) from the walls of the cryostat. This BBR was found to be responsible also for the observed cryoluminescence.     

Thermoluminescent dosimetric characteristics of annealed quartz

In the given present study, the effect of pre-irradiation heat treatment at 500 and 600 ^°C on the glow peaks of synthetic quartz was examined as a function of annealing time to obtain an optimum annealing procedure. It was observed that the annealing time is not a strongly sensitive parameter to change the intensities of glow peaks. On the other hand, the intensities of glow peaks between room temperature (RT) and 200 ^°C were continuously increased during successive readings after heat treatments. Moreover, the intensities of glow peaks above 250 ^°C have good stabilities. The obtained repeatability of a glow peak at ～320 ^°C over 10 cycles is within 5% after the application of annealing at 600 ^°C for 1 h. The general thermoluminescent dosimetric characteristics of synthetic quartz, such as the dose–response, signal fading as a function of storage time, and reusability were also tested using the annealing condition at 600 ^°C for 1 h. It was observed that dose-response behaviours of all glow peaks are similar to each other. They first follow linear part and then saturated at different dose levels. Peak 1 completely disappeared after 1 month storage in the dark room at RT. On the other hand, the intensity of peaks 2+3 was approximately reduced to 15% of its original value whereas the other peaks (P4–P5) were not sufficiently affected during this period.     

Decay of colour centres in natural chalcopyrite

Thermoluminescence (TL) or natural chalcopyrite (CuFeS₂) obtained from Mosabani Copper Mines shows two glow peaks at 198 and 250°C upon X-irradiation at room temperature. But the quenched sample when X-irradiated shows four glow peaks at 86, 136, 198 and 250°C. The emission spectra of all the glow peaks show a prominent band with a maximum at 566 nm. Both thermal and anomalous fading were observed in quenched samples. Tentative explanations for emission spectra and anomalous fading are given.     

Kinetic study of the thermoluminescence glow curve of natural dolerite

T _m–T _stop and glow curve deconvolution methods have been used to determine the number of glow peaks and kinetic parameters (activation energy E and frequency factor s) associated with the glow peaks in a natural dolerite. The T _m–T _stop method indicated that the glow curve of the mineral is the superposition of at least seven first-order components, whereas deconvolution analysis indicated the presence of at least eight peaks. A possible reason for this discrepancy is given. The kinetic parameters of the eight peaks are presented and used to estimate the lifetimes of the glow peaks. The lifetimes of the peaks at 120.8 and 143 °C are few days. For application in dosimetry and dating, we suggest the use of a preheat temperature around 170 °C to ensure the complete removal of these peaks with small lifetimes.     

Thermoluminescence of pretreated NaCl: Sr crystals

Thermal glow curves of thermally pretreated NaCl:Sr crystals have been recorded after irradiation with ultraviolet light at room temperature. The observed glow curves exhibit a prominent glow peak at 380°K only when the specimen is annealed and quenched from 750°C. This peak is attributed to the dipole clusters which disintegrate after heating the specimen beyond 380°K     

Thermoluminescence of nominally pure KTaO 3 crystals

After an exposure to ultraviolet light ( u <350 v nm) at 12 v K, weak thermoluminescence of nominally pure KTaO 3 crystals was observed within the temperature region from 13 to 65 v K for the first time. An analysis of the glow curves of integral thermoluminescence revealed five glow peaks with markedly sample-dependent intensities. Three glow peaks near 26, 31, and 58 v K at the heating rate of 0.155 v K/s correspond to thermoluminescence spectrally very similar to broad-band visible photoluminescence. The glow peaks near 26 and 31 v K were assigned to the electron release from photoinduced Ta 4+ -OH m and Ta 4+ - V O centers and the glow peak near 58 v K to the hole release from photoinduced O m centers. The glow peaks near 34 and 41 v K are connected with the structureless emission band peaking near 714 v nm at 15 v K that was observed in the emission spectra of KTaO 3 crystals for the first time.     

Thermoluminescence in two varieties of jadeite: Irradiation effects and application to high dose dosimetry

The thermoluminescence properties of white (WJ) and green (GJ) mineral jadeite have been investigated with a view to be of use in high dose dosimetry. WJ presented glow curve with 110, 190 and 235 °C peaks. All these peaks grow with radiation dose. The glow curve of GJ the green variety has TL peaks at 140, 210, 250 and 330 °C. We also observed that there is a difference between the TL glow curves for both samples, irradiated with gamma and electron. As expected the green jadeite can be used for measurement of dose as high as 50 kGy.     

UV excitation spectra of thermoluminescence in quartz

Thermoluminescence was excited at 300 K in natural quartz crystals by monochromatic ultraviolet radiation. The excitation spectra of the main glow peaks were measured in the spectral region 1150–2000 Å. A strong excitation maximum appeared for all measured glow peaks in the region of high absorbance on the long wavelength tail of a sharp reflectance peak at 1275 Å. Some glow peaks showed excitation maxima also at photon energies smaller than the absorption edge of the material. The dependence of the TL intensities on the dose of the exciting radiation was investigated for various glow peaks and excitation wavelengths. A sublinear dependence was recorded for some peaks by excitation at 1275 Å, while the same peaks showed a strictly linear dependence up to relatively high radiation doses, when excited at 1600 Å.     

Thermally stimulated luminescence and infrared studies of CaS : Bi,Tm phosphors

Calcium sulphide phosphors doped with bismuth and thulium are prepared from Indian minerals. The glow curves are recorded in the temperature range of 96–320 °K. The activation energies are determined by analyzing the glow peaks after thermal cleaning, using different methods. The results show that, in these phosphors, the electron traps responsible for thermoluminescence are present prior to irradiation. The infrared absorption spectra are recorded in the range of 4000-250 cm^-1. It is concluded that the traps are due to host lattice defects which may arise from S^-2 ion vacancies, created during phosphor preparation.     

Lattice location of Co implanted in silicon

Thermal treatment of CaF₂ has a significant influence on the number and intensity of the peaks seen by thermo-luminescence. A combination of ion implants and anneal cycles leads to the conclusion that the 90°C glow peak is derived from a defect of a substitutional trivalent impurity (e.g. Ce⁺³) linked to an interstitial fluorine ion. Perturbations of this centre by other defects modify the centre and the glow peak temperature is raised to 110°C.

The peaks at 180, 220 and 350°C all involve intrinsic defect clusters.

The building of models for the different glow peaks was helped by a comparison of impurity and self ion implantations.     

Radiation damage in single crystal L-Histidine as studied by low-temperature thermoluminescence techniques

X-irradiation of single crystal L-Histidine at 10 K produces TL glow peaks at 38, 72, 84, 122, 162, 204, and 245 K. The 84 K peak is the most intense one and is characterized by a thermal activation energy of 0.073 eV and frequency factor of 1.1×10³s^-1. Moreover, it is readily photobleachable, whereas the other glow peaks are not, and is tentatively correlated with the thermal decay of a carboxyl anion radical. Computer simulation of the Randall-Wilkins first-order TL expression provided a check on the experimentally derived parameters characterizing the 38 and 84 K peaks. The initial-rise method did not produce accurate parameters for the 38 K peak; however, computer simulation yielded an activation energy of 0.022 eV and a frequency factor of 20 s^-1 which were in agreement with the experimental shape of the glow curve. This TL peak is attributed to the thermal destruction of an imidazole cation radical. Emission spectra measurements of the 84 K luminescence (other peaks were of insufficient intensity) indicated that TL results from thermal release of electrons and their subsequent de-excitation to the ground state via the singlet and triplet manifolds. At sufficiently high temperatures (～78 K) one only observes singlet state emission due to intersystem crossing.     

Study of Vκ centers in CsI crystal

V_κ centers have been observed in CsI doped with Na⁺ and Tl⁺ after X-ray irradiation at LHeT using optical and EPR techniques. It is shown that they are oriented along [100] directions. By studying thermoluminescence two types of thermal migration have been found, one due to linear displacement of the centers along the cubic axis and the other due to 90° rotations. They correspond to two glow peaks at 60 and 90° K respectively.     

Effect of 100 MeV swift Si8+ ions on structural and thermoluminescence properties of Y2O3:Dy3+nanophosphor

Nanoparticles of Y₂O₃:Dy³⁺ were prepared by the solution combustion method. The X-ray diffraction pattern of the 900°C annealed sample shows a cubic structure and the average crystallite size was found to be 31.49?nm. The field emission scanning electron microscopy image of the 900°C annealed sample shows well-separated spherical shape particles and the average particle size is found to be in a range 40?nm. Pellets of Y₂O₃:Dy³⁺ were irradiated with 100?MeV swift Si⁸⁺ ions for the fluence range of 3?×?10^11_3?×?10¹³ ions cm^?2. Pristine Y₂O₃:Dy³⁺ shows seven Raman modes with peaks at 129, 160, 330, 376, 434, 467 and 590?cm^?1. The intensity of these modes decreases with an increase in ion fluence. A well-resolved thermoluminescence glow with peaks at ～414?K (T_m1) and ～614?K (T_m2) were observed in Si⁸⁺ ion-irradiated samples. It is found that glow peak intensity at 414?K increases with an increase in the dopant concentration up to 0.6?mol% and then decreases with an increase in dopant concentration. The high-temperature glow peak (614?K) intensity linearly increases with an increase in ion fluence. The broad TL glow curves were deconvoluted using the glow curve deconvoluted method and kinetic parameters were calculated using the general order kinetic equation.     

Thermolumineszenz von KCl und NaCl nach Röntgen- und UV-Bestrahlung bei Heliumtemperatur

Glow curves of luminescence are recorded in the range from 10° K to 300° K. One gets characteristic changes by prior annealing the single crystals in O₂ or HCl. Also an increase of the lattice disorder causes new glow bands. In KCl a strong glow band always appears at 40° K after irradiating with X-rays or ultraviolet light in the range of the exciton bands. It is ascribed to trapped excitons, which become mobile at that temperature. For X-ray irradiated KCl the glow curve of luminescence is compared with the electrical glow bands and with the concentration change of known defects. The half widthΔT of all glow bands is found proportional to the temperature of the maximum:ΔT=(0.08±0.02)T _m .