Transmission sputtering yields of gold at 6.8 MeV

The transmission sputtering yield of gold for 6.8-MeV Au^– bombardment has been measured on targets of thicknesses from 250 to ～ 7000 Å. The results are compared to Sigmund's theory and to recent calculations of deposited-energy depth distributions by Winterbon. Good agreement between experimental data and theory is found except for target thicknesses around 4000 Å, where the experimental yield rises by up to a factor two higher than predicted by theory. This discrepancy is interpreted in terms of collision spikes, which have been observed previously in backsputtering experiments.     

Sputtering-yield studies on silicon and silver targets

The sputtering yield of vacuum-deposited silicon and silver targets has been measured with 15 different 45-keV ions throughout the periodic system. The dependence of the yield on the projectile atomic number follows rather closely Sigmund's prediction, especially for silicon. The self-sputtering yield of silver was measured in the 30–500 keV energy range. Similar to what is known to be the case for other heavy particles on silver, the maximum of the yield was found to be much more pronounced than predicted by Sigmund's theory. This effect, together with small systematic deviations in the Z₁ dependence, is explained as being caused by non-linear effects in very dense collision cascades. This point of View is strongly supported by a comparison of the sputtering yield per atom for irradiation with atomic and molecular ions.     

Preferential sputtering of oxides: A comparison of model predictions with experimental data

Experimental data on the composition of the altered layer of some oxides bombarded with noble gas ions are compared with different model predictions based on Sigmund's sputtering theory. It is shown that although the difference in mass of the metal atoms is the dominant factor in the preferential sputtering of oxygen, the additional consideration of the surface binding energies yields an improved agreement between theory and experiment.     

A comparison of three versions of sigmund's model of sputtering using experimental results

Two modifications of Sigmund's sputtering formula, viz. by Bohdansky and by Yamamura et al. are compared with an α-adaptation of Sigmund's original formula to 620 experimental sputtering yields taken from literature. Using the α-values for the comparison, it was found that the considerable scatter of these values (averaged for given M₁, Z₁, M₂, Z₂) is not reduced by either of the two modifications, except for values in the range M₂/M₁ > 100. In each of the three versions the scatter is systematic, however, in as far as certain target elements yield average values of α which are consistently high, low or intermediate over a wide range of M₂/M₁ ratios.     

Surface topography effect on sputtering angular distributions from a Fe–W alloy

Abstract

An observation of the surface structures of Fe-W alloy target irradiated by 27 keV Ar⁺ ions with a fluence of 1 × 10¹⁷/cm² is carried out to investigate the surface topography effect on the sputtering angular distributions of individual elements. The angular distribution of sputtered Fe atoms is more outward-peaked than the cosine distribution. The found pit structures with an enriched Fe concentration may be one of the major causes of the deviation of the angular distribution of sputtered Fe atoms from Sigmund's theory.     

A new technique for the measurement of sputtering yields

We have measured the yields of 90 keV ⁴⁰Ar⁺ and V⁴He⁺ sputtering of Mo and V samples by the use of a new radio-tracer technique. This technique involves activating the samples by high-energy charged-particle irradiation before sputtering, and using conventional γ-ray counting methods to analyze the material subsequently sputtered onto collector foils. We have also measured angular distributions of the sputtered material, and compared these results and our total sputtering yields with the predictions of Sigmund's sputtering theory. Further comparisons between our radiotracer results and those obtained for ⁴⁰Ar⁺ sputtering of unactivated Mo and V samples, determined from elastic backscattering measurements using 12 MeV ¹⁶O ions, show that the techniques give consistent results.     

Anisotropic energy distribution of sputtered atoms induced by low energy heavy ion bombardment

The theory of anisotropic sputtering published in Phys. Rev. B 71(2), 026101 (2005) and Radiat. Effects Defects Solids 159(5), 301 (2004) has been modified and used to calculate the sputtering yield energy distributions for copper, tungsten, and aluminum targets bombarded by low-energy argon ion. As usual, the electronic stopping is ignored in the analysis. The present theory (modified Sigmund’s theory) has been shown to fit the corresponding experimental results of sputtering yield energy distributions well, except for the cases where the larger ion incident angle and larger sputtering emission angles were considered. The larger discrepancy between the present theory and the experimental result in the latter cases is probably due to the influence of direct recoil atoms on the energy spectrum. Compared with Falcone’s analytical theory, the present theory can reproduce much better experimental results of sputtering phenomena. The fact clearly demonstrates the intrinsic relation between the ion–energy dependence of the total sputtering yield and the sputtering yield energy distribution and suggests the great importance of momentum deposited on the target surface in the physical sputtering     

采用双层靶提高激光薄膜相互作用中加速质子的产额

 在激光等离子体相互作用实验中测量到的加速质子,来源于薄膜靶表面的碳氢沾染物。为了提供稳定充足的质子源,设计一种新的复合靶,在2.5 μm塑料溅射200 nm 金薄层形成双层靶,并在中等强度激光功率密度下开展研究,采用磁谱仪和CR-39探测器测量得到其能谱,结果表明：双层靶结构能够有效地增加质子的产额,并可能改善加速质子束的单能性。     

Kinetically assisted potential sputtering of insulators by highly charged ions

A new form of potential sputtering has been found for impact of slow ( < or = 1500 eV) multiply charged Xe ions (charge states up to q = 25) on MgO(x). In contrast to alkali-halide or SiO2 surfaces this mechanism requires the simultaneous presence of electronic excitation of the target material and of a kinetically formed collision cascade within the target in order to initiate the sputtering process. This kinetically assisted potential sputtering mechanism has been identified to be present for other insulating surfaces as well.     

一种新型等离子体磁控溅射镀膜电源设计

磁控溅射镀膜电源是磁控溅射系统中的关键设备之一。根据铌靶和锡靶溅射处理装置的技术要求,研制了一套输出电压0~800 V可调、脉冲宽度5~200 μs可调、频率0~60 Hz可调、在脉冲电流最大幅值约150 A的磁控溅射镀膜电源,分别给出了该电源在铌靶负载和锡靶负载下的实验结果。设计上采用高压短脉冲预电离一体化高功率双极性脉冲形成电路方法,解决了高功率磁控溅射在重复频率工作下有时不能成功溅射粒子、电离时刻不一致、溅射起弧打火靶面中毒、溅射效率低等问题,降低了磁控溅射装置内气体的工作气压,实现低气压溅射镀膜,提高了靶材的溅射效率,减小薄膜表面粗糙度。通过大量实验论证,该电源达到了理想的溅射效果,满足了指标要求。     

Temperature dependence in sputtering

We have obtained the result on the temperature dependence in sputtering of silver which is contrary to the current believes by taking steps to eliminate spurious effects due to changes of residual gas pressure and target temperature, and by determining the relevant energy range for thermal sputtering. The result i3 thought to be due basically to the thermal spike effect, and agreement is shown with a postulated thermal spike model, in which the instantaneous variation of spike temperature against thermal diffusivity is treated on the basis of Carslaw's solution of the normal heat conduction equation. The thermal diffusivity is shown to be proportionate to the thermal conductivity subject to a constant metal density in the temperature range 300–500K and a heat capacity that obeys the Dulong-Petit law which holds good for most metals at high temperatures (> θ_D). The thermal conductivity versus preheat target temperature curve matches the Makinson electronic thermal conductivity curve for metals.     

Formation of Ti and TiN ultra-thin films on Si by ion beam sputter deposition

Ultra-thin titanium and titanium nitride films on silicon substrate were obtained by ion beam sputtering of titanium target in vacuum and nitrogen atmosphere, using argon ions with energy of 5 keV and 15 μA target current. Elemental composition and chemical state of obtained films were investigated by X-ray photoelectron spectroscopy with using Mg-Kα X-ray radiation (photon energy 1253.6 eV). It was shown that it is possible to form both ultra-thin titanium films (sputtering in vacuum) and ultra-thin titanium nitride films (sputtering in nitrogen atmosphere) in the same temperature conditions. Photoelectron spectra of samples surface, obtained in different steps of films synthesis, detailed spectra of photoelectron emission from Si 2p, Ti 2p, N 1s core levels and also X-ray photoelectron spectra of Auger electrons emission are presented.     

Sputtering of AlxGa1−x As semiconductor targets by Ar+ ions with energies of 2–14 keV

Investigations of the sputtering of Al_xGa_1−x As semiconductor solid solutions by Ar⁺ ions with energies of 2–14 keV are performed. The dependence of the sputtering yield on the energy and angle of incidence of the ions are determined and the character of the surface relief formed during the sputtering is investigated. A comparison with theory shows that the best agreement between theory and experiment is achieved when the Haff-Switkowski formula is used together with Yudin’s stopping cross section. It is shown that the surface binding energies obtained differ from the atomization energies by an amount approximately equal to the amorphization energy. Zh. Tekh. Fiz. 67, 113–117 (June 1997)     

AES sputtering depth profile analysis of C/W layered synthetic microstructures

Layered synthetic microstructures composed of alternate layers of carbon and tungsten (prepared by triode sputtering) are analysed by Auger electron spectroscopy. A superficial pollution by silica is observed. In the multilayer, an in-depth contamination by oxygen is detected: a preferential oxidation of tungsten relative to carbon is observed. The Auger depth profile presents periodic and asymmetrical C and W waves. AS LSM's were not annealed, this result is related purely to an effect of sputtering. A theoretical approach based on the overlap of Gaussian distributions is proposed and agrees fairly well with the experimental data.     

Anisotropic angular distribution of sputtered atoms

The sputtering yield angular distributions have been calculated on the basis of the ion energy dependence of total sputtering yields for Ni and Mo targets bombarded by low-energy Hg⁺ ions. The calculated curves show excellent agreement with the corresponding Wehner's experimental results of sputtering yield angular distributions. This fact clearly demonstrates the intrinsic relation between the ion energy dependence of total sputtering yields and the sputtering yield angular distribution. This intrinsic relation had been ignored in Yamamura's papers [Yamamura, Y. (1982). Theory of sputtering and comparison to experimental data, Nucl. Instr. and Meth., 194, 515–522; Yamamura, Y. (1981). Contribution of anisotropic velocity distribution of recoil atoms to sputtering yields and angular distributions of sputtered atoms, Rad. Eff., 55, 49–55.] due to some obvious mistakes.     

Ion beam sputtering of multicomponent targets: Surface composition change and cluster emission

Preferential sputtering effect, which occurs during irradiation of a multicomponent target by medium energy ions, was under our investigation. A new term characterizing the preferential sputtering, called “surface sputtering yield” and defined as average number of components i sputtered from a top surface layer per one primary ion, was suggested. A direct proportionality between the dimer emission and surface concentration of the component, forming the dimer, was concluded; this let us estimate the preferential sputtering of any target from the composition of the flux of secondary particles, analyzed directly during the ion sputtering process, and define the composition of the ion sputtered surface.     

沉积参数对碳氮化硅薄膜化学结构及光学性能的影响

利用微波电子回旋共振（MW ECR）等离子体增强非平衡磁控溅射法制备了碳氮化硅（SiCN）薄膜。研究结果表明：硅靶溅射功率和氮气流量对薄膜化学结构、光学、力学等性能有很大影响。傅里叶变换红外光谱（FT IR）和X射线光电子能谱（XPS）表征显示，随着硅靶溅射功率由150W增加到350W，薄膜中C Si N键含量由14.3%增加到43.6％; 氮气流量的增大（2～15sccm）易于形成更多的sp2C＝N键和sp1C≡N键。在改变硅靶溅射功率和氮气流量的条件下，薄膜光学带隙最大值分别达到2.1eV和2.8eV。     

提高InGaAsP/InP DH面发光管输出光功率的研究

用改进了的射频溅射仪,对InGaAsP/InPDH面发光管窗口沉积Al2O3抗反射层,以提高光功率的输出。本文采用了两种涂层途径,其一是对单个发光管窗口直接涂层,另一则是对发光管管芯片上窗口涂层,并对二者作了比较。     

On the formation of nanocomposite TiC/a-C:H coatings by the method of the magnetron sputtering of Ti in an electron-beam activated Ar/C2H2 mixture

Composite TiC/a-C:H coatings with a thickness of 5 μm are produced by the reactive magnetron sputtering of titanium in an Ar/C₂H₂ gas mixture, which was additionally irradiated by a wide electron beam with an energy of 100 eV and an electric current of up to 1 A. The composition of the coatings is controlled by changing the C₂H₂ flow rate in the range from 1 to 16 mL/min under a constant Ar flow rate (40 mL/min) and magnetron current (2 A, 10 μs, 50 kHz). X-ray diffraction (XRD) investigations and high resolution transmission electron microscopy (HRTEM) methods confirm the formation of nanostructured coatings with a thickness of 4 to 9 nm. The hardness of the coatings nonmonotonically depends on the acetylene-flow rate. A maximum microhardness of 30 GPa is obtained when the atomic concentration of titanium in the coating determined by the Auger spectroscopy method is close to 38%. It is established that the electron-beam irradiation of a gas mixture during the deposition of coatings promotes the accelerated decomposition of acetylene and leads to a multiple (from 10 to 2 mL/min) decrease in the C₂H₂ flow rate, at which the maximum microhardness of coatings is reached.     

Pt(111)表面低能溅射现象的分子动力学模拟

利用嵌入原子方法的原子间相互作用势，通过分子动力学模拟，详细研究了贵金属原子在Pt (111)表面的低能溅射现象.模拟结果显示：对于垂直入射情况，入射原子的质量对Pt (11 1)表面的溅射阈值影响不大.当入射原子的能量小于溅射阈值时，入射原子基本以沉积为主 ；当入射原子的能量大于溅射阈值时，溅射产额随入射原子能量的增加而线性增大；当入射 原子能量达到200 eV时，各种入射原子的溅射产额都达到或接近1，此时入射原子主要起溅 射作用.溅射原子发射的角分布概率和溅射花样与高能溅射相类似.研究表明：与基于二体碰 撞近似的线性级联溅射理论不同，当入射原子能量大于溅射阈值时，低能入射原子的溅射产 额正比于入射原子的约化能量和入射原子与基体原子的质量比.通过对低能入射原子的钉扎 能力分析，提出了支配低能溅射的入射原子反射物理机理. 关键词： 分子动力学模拟、低能溅射