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1.
本文中研究了O+(200keV,1.8×1018/cm2)和N+(190keV,1.8×1018/cm2)注入Si形成SOI(Silicon on Insulator)结构的界面及埋层的化学组成。俄歇能谱的测量和研究结果表明:注O+的SOI结构在经1300℃,5h退火后,其表层Si和氧化硅埋层的界面存在一个不饱和氧化硅状态,氧化硅埋层是由SiO2相和这不饱和氧化硅态组成,而且氧化硅埋层和体硅界面不同于表层Si和氧化硅埋层界面;注N+的SOI结构在经1200℃,2h退火后,其氮化硅埋层中存在一个富N的疏松夹层,表层Si和氮化硅埋层界面与氮化硅埋层和体硅界面性质亦不同。这些结果与红外吸收和透射电子显微镜及离子背散射谱的分析结果相一致。还对两种SOI结构界面与埋层的不同特征的原因进行了分析讨论。
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2.
R. Job A.G. Ulyashin W.R. Fahrner A.I. Ivanov L. Palmetshofer 《Applied Physics A: Materials Science & Processing》2001,72(3):325-332
Oxygen and hydrogen accumulations at buried implantation-damage layers were studied after post-implant-ation annealing of
hydrogen- and helium-implanted Czochralski (Cz) silicon. Hydrogen implantation was carried out at energies E=180 keV and doses
D=2.7×1016 cm-2, and helium implantation at E=300 keV and D=1016 cm-2. For comparison hydrogen implantation was also done into float-zone (Fz) silicon wafers. Post-implantation annealing at 1000 °C
was done either in H2 or N2 atmosphere. Hydrogen and oxygen concentration profiles were measured by secondary ion mass spectroscopy (SIMS). It is shown
that the ambient during annealing plays a significant role for the gettering of oxygen at buried implantation-damage layers
in Cz Si. For both hydrogen and helium implantations, the buried defect layers act as rather effective getter centers for
oxygen and hydrogen at appropriate conditions. The more efficient gettering of oxygen during post-implantation annealing in
a hydrogen ambient can be attributed to a hydrogen-enhanced diffusion of oxygen towards the buried implantation-damage layers,
where a fast oxygen accumulation occurs. Oxygen concentrations well above 1019 cm-3 can be obtained. From the comparison of measurements on hydrogen-implanted Cz Si and Fz Si one can conclude that at the buried
defect layers hydrogen is most probably trapped by voids and/or may be stable as immobile molecular hydrogen species. Therefore
hydrogen accumulated at the defect layers, and is preserved even after high-temperature annealing at 1000 °C.
Received: 3 July 2000 / Accepted: 11 July 2000 / Published online: 22 November 2000 相似文献
3.
M. Tamura K. Tokiguchi H. Seki M. Ishimaru H. Mori 《Applied Physics A: Materials Science & Processing》2005,81(7):1375-1383
In order to form silicon (Si)-on-insulator (SOI) layers with various thicknesses, oxygen implantation with doses between 1.0×1017/cm2 and 6.0×1017/cm2 and at energies between 40 and 240 keV has been carried out into 300 mm diameter (100)Si wafers at a temperature of 560 °C. After implantation, Si wafers are annealed in dry Ar mixed with 1% O2 at a temperature of 1350 °C for 4 h. The quality of buried oxide (BOX) layers and the microstructure in implanted layers before and after annealing is characterized by transmission electron microscopy. The results reveal that the appreciable number of threading dislocations (TDs) is generated in SOI layers implanted at energies above 200 keV under the optimum dose-energy conditions for the continuous BOX layer formation. Whereas, in the case of discontinuous BOX layers, the TD generation is observed in samples implanted at energies above 120 keV. The generation of TDs is discussed with the emphasis on the effect of implantation energy. PACS 61.72Ff; 61.72Lk 相似文献
4.
ABSTRACT Thermally grown SiO2 thin films on a silicon substrate implanted with 100?keV silicon negative ions with fluences varying from 1?×?1015 to 2?×?1017 ions cm?2 have been investigated using Electron spin resonance, Fourier transforms infrared and Photoluminescence techniques. ESR studies revealed the presence of non-bridging oxygen hole centers, E′-centers and Pb-centers at g-values 2.0087, 2.0052 and 2.0010, respectively. These vacancy defects were found to increase with respect to ion fluence. FTIR spectra showed rocking vibration mode, stretching mode, bending vibration mode, and asymmetrical stretching absorption bands at 460, 614, 800 and 1080?cm?1, respectively. The concentrations of Si–O and Si–Si bonds estimated from the absorption spectra were found to vary between 11.95?×?1021 cm?3 and 5.20?×?1021 cm?3 and between 5.90?×?1021 cm?3 and 3.90?×?1021 cm?3, respectively with an increase in the ion fluence. PL studies revealed the presence of vacancies related to non-bridging oxygen hole centers, which caused the light emission at a wavelength of 720?nm. 相似文献
5.
The disorders induced in crystalline silicon (c-Si) through the process of electronic energy loss in the swift heavy ion irradiation were investigated. A number of silicon <1 0 0> samples were irradiated with 65 MeV oxygen ions at different fluences, 1×1013 to 1.5×1014 ions/cm2, and characterized by the Raman spectroscopy, the optical reflectivity, the X-ray reflectivity, the atomic force microscopy (AFM) and the X-ray diffraction (XRD) techniques. The intensity, redshift, phonon coherence length and asymmetric broadening associated with the Raman peaks reveal that stressed and disordered lattice zones are produced in the surface region of the irradiated silicon. The average crystallite size, obtained by analyzing Raman spectrum with the phonon confinement model, was very large in the virgin silicon but decreased to<100 nm dimension in the ion irradiated silicon. The results of the X-ray reflectivity, AFM and optical reflectivity of 200–700 nm radiation indicate that the roughness of the silicon surface has enhanced substantially after ion irradiation. The diffusion of oxygen in silicon surface during ion irradiation is evident from the oscillation in the X-ray reflectivity spectrum and the sharp decrease in the reflectivity of 200–400 nm radiation. The rise in temperature, estimated from the heat spike model, was high enough to melt the local silicon surface. The results of XRD indicate that lattice defects have been induced and a new plane <2 1 1> has been formed in the silicon <1 0 0>after ion irradiation. The results of the present study show that the energy deposited in crystalline silicon through the process of electronic energy loss ~0.944 keV/nm per ion is sufficient to induce disorders of appreciable magnitude in the silicon surface even at a fluence of ~1013 ions/cm2. 相似文献
6.
The total charge-exchange cross section, σ+0, for He+ incident on Cs vapor has been measured in the energy range 0.5 to 41 keV. The cross section falls from (1664 ± 100) × 10?17 cm2 at 1.4 keV to (224 ± 20) × 10-17 cm2 at 41 keV. These measurements are compared with previous measurements and with theoretical calculations of this cross section. 相似文献
7.
《Solid State Communications》1987,64(3):325-326
Fluorine ions with an energy of 180keV at a dose of 1×1015 ions/cm2 have been implanted into YBa2Cu3Ox. After annealed at 800°C, the resistance of the new Y-Ba-Cu-F-O compound drops to zero at 148.5K. 相似文献
8.
A simple technique for the study of the spatial distribution of the damage produced by ion implantation of silicon has been developed. The damage depth distribution for 40 keV boron ions in silicon has been studied at irradiation doses from 7 × 1011 to 3.9 × 1014 ions/cm2 and the relative defect peak depth R d/R p = 0.85 determined. An increase of layer conductivity as the surface part of the implanted layer is removed has been revealed. This effect is caused by the presence of radiation defects in the surface region of the layer. The “electrical” cluster diameter is about 28 A and the overlapping cluster dose is close to 1 × 1013 ions/cm2. 相似文献
9.
V. V. Privezentsev O. S. Zilova A. A. Burmistrov A. A. Batrakov M. Yu. Presnyakov 《Bulletin of the Russian Academy of Sciences: Physics》2018,82(2):163-169
Single-crystal Al2O3 substrates are implanted with 64Zn+ ions using doses of 5 × 1016 cm–2 and an energy of 100 keV. The samples are annealed in oxygen with a stepwise increase in temperature from 400 to 1000°C. The changes on the surface and in the bulk of the sample are analyzed via scanning electron microscopy, energy-dispersive analysis, transmission electron microscopy, and Auger electron spectroscopy. 相似文献
10.
A. Axmann M. Schulz C. R. Fritzsche 《Applied Physics A: Materials Science & Processing》1977,12(2):173-178
The ions of Sb, As, and P have been implanted into germanium at energies ranging from 200 keV to 700 keV. Annealing was performed
at 400°C, 550°C, and 650°C. The doping profile was determined by differentialCV-measurements. Strong outdiffusion (80%) and diffusion into the bulk material was observed after annealing. The remaining
doping concentration and the diffusion constants were determined by a computer fit at 650°C. We foundD
Sb=1.8×10−13 cm2/s,D
As=9×10−14 cm2/s andD
P=4×10−14 cm2/s. Lower values of the diffusion constant were determined when the samples were covered with a SiO2 layer. 相似文献
11.
H. Cherkani-Hassani S. Cherkani-Hassani D. S. Belic J. J. Jureta J. Lecointre P. Defrance 《The European Physical Journal D - Atomic, Molecular, Optical and Plasma Physics》2010,58(1):75-83
Absolute cross-sections for electron-impact ionization and dissociation of
C2H2+ and C2D2+ have been measured for electron energies
ranging from the corresponding thresholds up to 2.5 keV. The animated
crossed beams experiment has been used. Light as well as heavy fragment ions
that are produced from the ionization and the dissociation of the target
have been detected for the first time. The maximum of the cross-section for
single ionization is found to be (5.56 ± 0.03)× 10-17 cm2 around 140 eV. Cross-sections for dissociation of C2
H2+ (C2D2+) to ionic products are seen to decrease for two orders
of magnitude, from C2D+ (12.6 ± 0.3) × 10-17 cm2 over CH+(9.55 ± 0.06) × 10-17 cm2,
C+ (6.66 ± 0.05) × 10-17 cm2, C2+ (5.36 ± 0.27) × 10-17 cm2, H+ (4.73 ±
0.29) × 10-17 cm2 and CH2+ (4.56 ± 0.27) × 10-18 cm2 to H2+ (5.68 ± 0.49) ×
10-19 cm2. Absolute
cross-sections and threshold energies have been compared with the scarce
data available in the literature. 相似文献
12.
The emission of Si+, Si2+, Si3+, Si2+, SiO+ and B+ from boron doped silicon has been studied at oxygen partial pressures between 2 × 10?10 and 2 × 10?5 Torr. Sputtering was done with 2 to 15 keV argon ions at current densities between 3 and . The relative importance of the different ionization processes could be deduced from a detailed study of the yield variation at varying bombardment conditions. Comparison with secondary ion emission from silicon dioxide allows a rough determination of the composition of oxygen saturated silicon surfaces. 相似文献
13.
G. A. Oganesyan I. I. Novak 《Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques》2009,3(6):962-965
The electrical properties of thermal donors formed in the bulk and near-surface regions in silicon samples with (3–9) × 1017 cm−3 oxygen concentrations under elastic tensile stress σ of about 1 GPa have been studied. The original method allowing us to
control an introduced elastic tensile stress during the thermal donor’s formation at T = 450°C by a double-crystal X-ray diffractometer has been used. The formation of thermal donors in silicon with a high oxygen
concentration of 9.3 × 1017 cm−3 under tensile stress has been found to be less effective than in silicon with a low oxygen concentration of (3–5) × 1017 cm−3. Single-charged donors are formed in silicon with a low oxygen concentration under tensile stress while double-charged donors
are formed in silicon with a high oxygen concentration. 相似文献
14.
H. Reuther 《Hyperfine Interactions》1990,56(1-4):1637-1641
Up to now a great deal of investigations in ion beam mixing of iron-aluminium layers are known. However, the easier way to
produce such layers by direct implantation of aluminium ions in iron is less studied. In the present work aluminium implanted
iron layers are studied.
Iron samples were implanted with aluminium ions at 50, 100, and 200 keV, respectively, with doses between 5×1016 and 5×1017 cm−2. Independent of energy, at doses up to 2×1017 cm−2, besides alpha iron further magnetic fractions with a Fe3Al-like structure are formed while at a dose of 5×1017 cm−2 amorphous nonmagnetic components are formed. 相似文献
15.
Jacques Martineau Sylvain Repoux Maxime Rabeau Georges Nierat Michel Rostaing 《Optics Communications》1974,12(3):307-311
Using a 60 nsec, 300 MW CO2 TEA laser reflection measurements from solid deuterium targets have been investigated. Energy, reflected and scattered pulse shape are recorded at various angles: 0°, 45°, 90°, 135°. Reflection, X-ray measurements and ion mean kinetic energy are correlated at the focussing lens position with respect to the target position. The maximum plasma temperature varies from 20 to 35 eV for incident laser fluxes ranging from 5 × 1010 up to 5 × 1011 W/cm2. The cut-off density inside the deuterium ice has been observed and located. In each case reflection has been found to be weak less than 5% for each direction. For the maximum fluxes X-ray energies greater than 0.5 keV have been observed. 相似文献
16.
D. A. Zatsepin I. R. Shein É. Z. Kurmaev V. M. Cherkashenko S. N. Shamin N. A. Skorikov A. D. Yadav S. K. Dubey 《Physics of the Solid State》2008,50(1):146-151
The local electronic structure of 〈111〉 n-silicon single-crystal samples is studied using Si L 2, 3 x-ray emission spectroscopy. The Si x O y N z system is formed by implanting the samples with an 16O 2 + and 14N 2 + ion molecular beam (the oxygen/nitrogen ratio in the molecular beam is 1:1, the implantation energy is 30 keV, the irradiation fluences vary from 2.0 × 1017 to 1.5 × 1018 cm?2, the samples after the implantation are subjected to rapid thermal annealing in nitrogen at 800°C for 5 min). A comparison of the recorded Si L spectra with the spectra of the reference samples reveals clear correlations between the specific features of the electronic structure of the silicon oxynitride formed upon implantation and the ion fluence. It is shown that the implantation at fluences of 2 × 1017 and 1 × 1018 cm?2 results in the predominant formation of Si3N4, whereas the implantation at a fluence of 1.5 × 1018 cm?2 leads primarily to the formation of SiO2 layers in single-crystal silicon. The most probable factors and mechanisms accounting for such implantation of 16O 2 + and 14N 2 + into the samples under study are discussed. The experimental data obtained are compared with ab initio full-potential linearized augmented plane wave calculations of the band structure. 相似文献
17.
本文在20°—300°K研究了室温载流子浓度2×1012—1×1020cm-3含硼或磷(砷)Si的电学性质。对一些p-Si样品用弱场横向磁阻法及杂质激活能法进行了补偿度的测定,并进行了比较。从霍尔系数与温度关系的分析指出,对于较纯样品,硼受主能级的电离能为0.045eV,磷施主能级为0.045eV,在载流子浓度为1018—1019cm-3时发现了费米简并,对载流子浓度为2×1017—1×1018cm-3的p-Si及5×1017—4×1018cm-3的n-Si观察到了杂质电导行为。从霍尔系数与电导率计算了非本征的霍尔迁移率。在100°—300°K间,晶格散射迁移率μ满足关系式AT-a,其中A=2.1×109,α=2.7(对空穴);或A=1.2×108,α=2.0(对电子)。另外,根据我们的材料(载流子浓度在5×1011—5×1020cm-3间),分别建立了一条电阻率与载流子浓度及电阻率与迁移率的关系曲线,以提供制备材料时参考之用。 相似文献
18.
The effect of bombardment with iron ions on the evolution of gas porosity in silicon single crystals has been studied. Gas porosity has been produced by implantation hydrogen, deuterium, and helium ions with energies of 17, 12.5, and 20 keV, respectively, in identical doses of 1 × 1017 cm–2 at room temperature. For such energy of bombarding ions, the ion doping profiles have been formed at the same distance from the irradiated surface of the sample. Then, the samples have been bombarded with iron Fe10+ ions with energy of 150 keV in a dose of 5.9 × 1014 cm–2. Then 30-min isochoric annealing has been carried out with an interval of 50°C in the temperature range of 250–900°C. The samples have been analyzed using optical and electron microscopes. An extremely strong synergetic effect of sequential bombardment of silicon single crystals with gas ions and iron ions at room temperature on the nucleation and growth of gas porosity during postradiation annealing has been observed. For example, it has been shown that the amorphous layer formed in silicon by additional bombardment with iron ions stimulates the evolution of helium blisters, slightly retards the evolution of hydrogen blisters, and completely suppresses the evolution of deuterium blisters. The results of experiments do not provide an adequate explanation of the reason for this difference; additional targeted experiments are required. 相似文献
19.
Ion-implanted shallow junctions have been investigated using BE2 (molecular ions) by the anodic oxidation method coupled with a four-point probe technique. BF2 ions were implanted through screen oxide at doses of 3–5 × 1015 ions/cm2 and energies of 25 and 45 keV which is equivalent to 5.6 keV and 10 keV of boron ions. The effect of energy, dose and annealing temperature on shallow junctions is presented in this paper. The shallow junctions in the range of 0.19 μm to 0.47 μm were fabricated. The effect of fluorine on sheet resistivity of boron implanted silicon at various doses, treated with two-step and three-step annealing, is also presented for comparison in the paper. 相似文献
20.
Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
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Herein we report on the passivation of crystalline silicon by gallium oxide (Ga2O3) using oxygen plasma as the oxidizing reactant in an atomic layer deposition (ALD) process. Excess carrier lifetimes of 2.1 ms have been measured on 1.75 Ω cm p‐type silicon, from which a surface recombination current density J0 of 7 fA cm–2 is extracted. From high frequency capacitance‐voltage (HF CV) measurements it is shown that, as in the case of Al2O3, the presence of a high negative charge density Qtot/q of up to –6.2 × 1012 cm–2 is one factor contributing to the passivation of silicon by Ga2O3. Defect densities at midgap on the order of ~5 × 1011 eV–1 cm–2 are extracted from the HF CV data on samples annealed at 300 °C for 30 minutes in a H2/Ar ambient, representing an order of magnitude reduction in the defect density compared to pre‐anneal data. Passivation of a boron‐diffused p+ surface (96 Ω/□) is also demonstrated, resulting in a J0 of 52 fA cm–2. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献