Correlations between antibunching and blinking of photoluminescence from a single CdSe quantum dot

The antibunching and blinking from a single CdSe/ZnS nanocrystal with an emission wavelength of 655 nm were investigated under different excitation powers. The decay process of the photoluminescence from nanocrystal was fitted into a stretched exponential, and the small lifetime and the small stretching exponent under a high excitation power were explained by using nonradiative multi-channel model. The probability of distributions for off-times from photoluminescence intermittence was fitted into the power law, and the power exponents were explained by using a tunneling model. For higher excitation power, the Auger-assisted tunneling model takes effect, where the tunneling rate increases and the observed lifetime decreases. For weak excitation power, the electron directly tunnels between the nanocrystal and trapping state without Auger assistance. The correlation between antibunching and blinking from the same nanocrystal was analyzed.     

Photostability of single-photon emission from a single quantum dot in the 650-nm wavelength band at room temperature

The photoluminescence correlation from a single CdSe nanocrystal under pulsed excitation is studied, and a single photon is realized at wavelength 655 nm at room temperature. The single colloidal CdSe quantum dot is prepared on a SiO₂/silicon surface by a drop-and-drag technique. The long-term stability of the single-photon source is investigated; it is found that the antibunching effect weakens with excitation time, and the reason for the weakening is attributed to photobleaching. The lifetimes of photoluminescence from a single quantum dot are analyzed at different excitation times. By analyzing the probability distribution of on and off times of photoluminescence, the Auger assisted tunneling and Auger assisted photobleaching models are applied to explain the antibunching phenomenon.     

Spectral behavior of the emission around 3.31 eV (A-line) from ZnO nanocrystals

The emission at around 3.31 eV (A-line) from three types of ZnO nanocrystals with different particle sizes (10-1000 nm) was studied. The photoluminescence (PL) measurements were performed under different excitation densities and at different temperatures. The A-line emission exhibited a strong dependence on temperature and excitation power density. With increasing excitation density and temperature overlapping of the closely spaced first longitudinal optical (LO) phonon replica of free excitons by the A-line emission was observed.     

Photon antibunching in the photoluminescence spectra of a single carbon nanotube

We report the first observation of photon antibunching in the photoluminescence from single carbon nanotubes. The emergence of a fast luminescence decay component under strong optical excitation indicates that Auger processes are partially responsible for inhibiting two-photon generation. Additionally, the presence of exciton localization at low temperatures ensures that nanotubes emit photons predominantly one by one. The fact that multiphoton emission probability can be smaller than 5% suggests that carbon nanotubes could be used as a source of single photons for applications in quantum cryptography.     

光泵浦ZnCdSe／ZnSe单量子阱蓝绿受激发射的研究

报道了常压金属有机化学汽相淀积（ＭＯＣＶＤ）制备的Ｚｎ０．７Ｃｄ０．３Ｓｅ／ＺｎＳｅ单量子阱的光泵浦受激发射性质。在７７Ｋ下观测到了ｎ＝２的重空穴激子发光峰和ｎ＝１的重空穴激子吸收峰。在７７Ｋ脉冲激光泵浦下受激发射阈值功率密度为１１６ｋｗ／ｃｍ２。认为受激发射机理可能是激子局域态的空间填充。     

一维氧化锌柱阵列空间取向激发的荧光光谱研究

用两步气相沉积-氧化法制备了具有高度一致指向性的一维纤锌矿六方结构的氧化锌单晶柱阵列,探测它的不同空间取向激发条件下的荧光光谱。结果表明,一维阵列样品在不同空间取向的激发光照射下,其荧光光谱有明显变化。当低功率355 nm激光对一维方向进行横向激发时,激子发光的相对强度较大;当用1 064 nm 激光取向激发时,发射光谱的差异更明显。除了荧光光谱的发射峰强弱发生变化外,在一维横向激发时上转换发射光谱产生了新的发射峰,表明在不同的取向激发下一维阵列样品对激发光的吸收有明显变化。由此产生的荧光发射的差异非常明显,表明一维氧化锌柱阵列对能量吸收、能量传递等有很强的方向性。上转换偏振光谱表明,当偏振光的振动方向与阵列的一维方向平行时,发射光谱中400 nm的发光峰强度比偏振方向与一维方向垂直时要大,表明偏振方向对一维阵列的空间取向激发荧光光谱是有影响的。在讨论阵列发光性质如发光光谱,发射强度的时候,必须明确激发光的强度、取向以及激发光的偏振方向。     

Single-Photon Emission at Liquid Nitrogen Temperature from a Single InAs/GaAs Quantum Dot

We report on the single photon emission from single InAs/GaAs self-assembled Stranski-Krastanow quantum dots up to 80 K under pulsed and continuous wave excitations. At temperature 8OK, the second-order correlation function at zero time delay, g^（2）（0）, is measured to be 0.422 for pulsed excitation. At the same temperature under continuous wave excitation, the photon antibunching effect is observed. Thus, our experimental results demonstrate a promising potential application of self-assembled InAs/GaAs quantum dots in single photon emission at liquid nitrogen temperature.     

Low temperature photoluminescence study of Ga As defect states

Low temperature(77 K)photoluminescence measurements have been performed on different GaAs substrates to evaluate the GaAs crystal quality.Several defect-related luminescence peaks have been observed,including 1.452 eV,1.476 eV,1.326 eV peaks deriving from 78 meV Ga_(As) antisite defects,and 1.372 eV,1.289 eV peaks resulting from As vacancy related defects.Changes in photoluminescence emission intensity and emission energy as a function of temperature and excitation power lead to the identification of the defect states.The luminescence mechanisms of the defect states were studied by photoluminescence spectroscopy and the growth quality of GaAs crystal was evaluated.     

Growth mechanism and optical properties of InGaAs/GaAsSb Su-perlattice structures

In this paper,we report the growth of Ga As Sb and its crystalline property under various Sb2/As2 flux ratios and growth temperatures.We simulated the incorporation difference between Sb2 and As2 by using a non-equilibrium thermodynamic model.Our study of Ga As Sb growth has successfully yielded,high quality In Ga As/Ga As Sb Type II superlattice for which the optical properties were characterized by photoluminescence at different excitation power and temperature.A blue-shift in luminescence peak energy with excitation power was observed and was described by a non-equilibrium carrier density model.We measured and analyzed the dependences of peak energy and integrated intensity on temperature.Two thermal processes were observed from intensity dependent photoluminescence measurements.     

同轴空心阴极氦等离子体的电子激发温度研究

利用同轴空心阴极放电装置,产生氦低温等离子体。通过对等离子体的发射光谱进行测量和计算,研究放电功率以及氦气压强对等离子体的电子激发温度的影响。结果表明:氦低温等离子体的发射光谱主要由连续谱和原子谱线构成,放电功率和压强对谱线的强度具有明显影响。压强的变化不仅影响电子从电场中获得的能量,还会影响电子与原子的碰撞频率,从而导致电子激发温度随着氦气压强的增大,出现先上升后下降的变化趋势。     

CdSe/CdZnSe超晶格的激子光学性质的研究

用分子束外延法在GaAs衬底上生长了CdSe/Cd0.65Zn0.35Se超晶格结构。利用X射线衍射（XRD）、77K下变密度激发的光致发光光谱和变温度光致发光光谱研究了CdSe/CdZnSe超晶格结构和激光复合特性，在该材料中观测到激子－激子散射发射峰，变密度激发光致发光光谱和谱温度光致发光光谱证实了这一现象，激子发射峰的线宽随着温度的升高而展宽，低温时发光峰的宽度主要是由合金组分和阱垒起伏引起的，没温时激子线宽展宽是由于激子与纵光学声子和离化的施主杂质间的散射作用引起的，光致发光的强度随着温度的升高而降低，这主要是由激子的热离化造成的，也就是说，热激发使得电子或空穴由阱中跃迁至垒上。     

Coupling of nitrogen-vacancy centers to photonic crystal cavities in monocrystalline diamond

The zero-phonon transition rate of a nitrogen-vacancy center is enhanced by a factor of ～70 by coupling to a photonic crystal resonator fabricated in monocrystalline diamond using standard semiconductor fabrication techniques. Photon correlation measurements on the spectrally filtered zero-phonon line show antibunching, a signature that the collected photoluminescence is emitted primarily by a single nitrogen-vacancy center. The linewidth of the coupled nitrogen-vacancy center and the spectral diffusion are characterized using high-resolution photoluminescence and photoluminescence excitation spectroscopy.     

纳米Zn_2SiO_4∶Mn包覆SiO_2颗粒的制备及表征

采用水热合成方法添加KOH在SiO2颗粒表面包覆Mn2+掺杂纳米Zn2SiO4,通过X射线衍射(XRD)仪、扫描电子显微镜(SEM)、能谱、光致发光(PL)光谱仪对产物的晶体结构、形貌及光学性能进行表征,并对Zn2SiO4晶体在水热反应过程中的反应机制进行了讨论。XRD测试结果表明:220℃水热条件下,添加少量KOH,反应不同时间后,可在石英砂表面生成一层Zn2SiO4;SEM照片显示所生成的Zn2SiO4为六棱柱形,并且不同反应条件下Zn2SiO4的包覆程度不同。反应产物经光致发光性能研究表明:Mn2+掺杂纳米Zn2SiO4包覆SiO2样品中显示两套光致发光谱,一套为250nm左右激发产生的522nm绿色发光带,另一套为340～410nm宽带激发的440nm蓝色发光带,前者为典型的Mn2+离子发光,后者440nm发光带则有可能来源于基体SiO2的氧空位缺陷。     

Persistence of manifolds in nonequilibrium critical dynamics

We study the persistence probability P(t) that, starting from a random initial condition, the magnetization of a d'-dimensional manifold of a d-dimensional spin system at its critical point does not change sign up to time t. For d'>0 we find three distinct late-time decay forms for P(t): exponential, stretched exponential, and power law, depending on a single parameter zeta=(D-2+eta)/z, where D=d-d' and eta,z are standard critical exponents. In particular, we predict that for a line magnetization in the critical d=2 Ising model, P(t) decays as a power law while, for d=3, P(t) decays as a power of t for a plane magnetization but as a stretched exponential for a line magnetization. Numerical results are consistent with these predictions.     

Near infrared emission spectroscopy induced by ultrasonic irradiation

Near infrared emission caused by ultrasonic excitation is demonstrated for the first time in this work. The instrument is constituted of an acousto-optical tunable filter-based spectrometer, an ultrasonic processor connected to a titanium alloy ultrasonic probe and a cylindrical borosilicate flask containing the sample to be excited. The radiation emitted by the sample is collected by a concave mirror and sent to the spectrometer. The effects of the position of the probe extremity in relation to a lateral entrance of the borosilicate flask and of the ultrasonic power on the emission signal were studied. The best results were obtained by positioning the probe extremity up to 2mm from the reflexive body (lateral entrance) using 30% of the full ultrasonic incident power and acquiring spectra after 5 min of sonication. The NIR emission spectra resulting from the ultrasonic excitation were in agreement with that obtained by thermal excitation. The proposed technique was utilized to study different poly(dimethylsiloxane) samples having different viscosities.     

CdTe/CdZnTe多量子阱激子复合动力学性质的研究

报道了分子束外延制备的高质量CdTe/Cd_0.64Zn_0.36Te多量子阱结构的光学性质,由变温光致发光光谱讨论了随温度升高辐射线展宽和辐射复合效率降低的机理.在变密度激发的皮秒时间分辨光谱中,发现不同激发密度下发光衰减时间不同,并研究了它的机理.在高激发密度下观测到n=2的重空穴激子发光. 关键词：     

Strongly nonlinear luminescence in oxidized porous silicon films

Partially oxidized free-standing porous silicon films show a strongly superlinear increase in photoluminescence (PL) intensity above a threshold cw excitation intensity of 10 W/cm². The PL-intensity increase can be expressed by a power law with n9 as a function of the excitation intensity. The PL-peak wavelength of this emission is slightly redshifted from that at low-excitation levels. These changes are fully reversible and reproducible, but not observed in samples on substrate. We attribute this behavior to thermal reexcitation of carriers trapped at the dangling bond states in initially nonluminescent Si nanocrystallites.     

Photochemical Characterization of Up-Converting Inorganic Lanthanide Phosphors as Potential Labels

We have characterized commercially available up-converting inorganic lanthanide phosphors for their rare earth composition and photoluminescence properties under infrared laser diode excitation. These up-converting phosphors, in contrast to proprietary materials reported earlier, are readily available to be utilized as particulate reporters in various ligand binding assays after grinding to submicron particle size. The laser power density required at 980 nm to generate anti-Stokes photoluminescence from these particulate reporters is significantly lower than required for two-photon excitation. The narrow photoluminescence emission bands at 520–550 nm and at 650–670 nm are at shorter wavelengths and thus totally discriminated from autofluorescence and scattered excitation light even without temporal resolution. Transparent solution of colloidal bead-milled up-converting phosphor nanoparticles provides intense green emission visible to the human eye under illumination by an infrared laser pointer. In this article, we show that the unique photoluminescence properties of the up-converting phosphors and the inexpensive measurement configuration, which is adequate for their sensitive detection, render the up-conversion an attractive alternative to the ultraviolet-excited time-resolved fluorescence of down-converting lanthanide compounds widely employed in biomedical research and diagnostics.     

Second-Order Correlation Function of the Photon Emission from a Single Quantum Dot

The photon correlation of photon emission from a single quantum dot with cw excitation and pulsed excitation is investigated in details. To calculate the second-order correlation function for optical pumping, we deduce rate equations with a simplified two-level model under cw excitation and present the master equation approach in the interaction picture to the study of evolution of a three-level system under pulsed excitation. In addition, we report photon correlation measurements on a single self-assembled In0.5Ga0.5As quantum dot, which show strong antibunching behaviour under both the conditions of cw and pulsed excitations. The calculated results are in agreement with the experimental measurements.     

基于分子束外延生长的1.05 eV InGaAsP的超快光学特性研究

利用分子束外延方法制备了应用于四结光伏电池的1.05 eV InGaAsP薄膜, 并对其超快光学特性进行了研究. 温度和激发功率有关的发光特性表明: InGaAsP材料以自由激子发光为主. 室温下InGaAsP材料的载流子发光弛豫时间达到10.4 ns, 且随激发功率增大而增大. 发光弛豫时间随温度升高呈现S形变化, 在低于50 K时随温度升高而增大, 在50–150 K之间时减小, 而温度高于150 K时再次增大. 基于载流子弛豫动力学, 分析并解释了温度及非辐射复合中心浓度对样品材料载流子发光弛豫时间S形变化的影响.