Simultaneous growth of diamond and nanostructured graphite thin films by hot-filament chemical vapor deposition

Diamond and graphite films on silicon wafer were simultaneously synthesized at 850 °C without any additional catalyst. The synthesis was achieved in hot-filament chemical vapor deposition reactor by changing distance among filaments in traditional gas mixture. The inter-wire distance for diamond and graphite deposition was kept 5 and 15 mm, whereas kept constant from the substrate. The Raman spectroscopic analyses show that film deposited at 5 mm is good quality diamond and at 15 mm is nanostructured graphite and respective growths confirm by scanning auger electron microscopy. The scanning electron microscope results exhibit that black soot graphite is composed of needle-like nanostructures, whereas diamond with pyramidal featured structure. Transformation of diamond into graphite mainly attributes lacking in atomic hydrogen. The present study develops new trend in the field of carbon based coatings, where single substrate incorporate dual application can be utilized.     

Enhanced nucleation, smoothness and conformality of ultrananocrystalline diamond (UNCD) ultrathin films via tungsten interlayers

Extremely smooth (6 nm RMS roughness over 4 μm²), thin (100 nm), and continuous ultrananocrystalline diamond (UNCD) films were synthesized by microwave plasma chemical vapor deposition using a 10 nm tungsten (W) interlayer between the silicon substrate and the diamond film. These UNCD films possess a high content of sp³-bonded carbon. The W interlayer significantly increased the initial diamond nucleation density, thereby lowering the surface roughness, eliminating interfacial voids, and allowing thinner UNCD films to be grown. This structural optimization enhances the films’ properties and enables its integration with a wide variety of substrate materials.     

Preparation of grain size controlled boron-doped diamond thin films and their applications in selective detection of glucose in basic solutions

Boron-doped diamond (BDD) thin films with different crystal grain sizes were prepared by controlling the reacting gas pressure using hot filament chemical vapor deposition (HFCVD). The morphologies and structures of the prepared diamond thin films were characterized by scanning electron microscopy (SEM) and Raman spectroscopy. The electrochemical responses of K₄Fe(CN)₆ on different BDD electrodes were investigated. The results suggested that electron transfer was faster at the boron-doped nanocrystalline diamond (BDND) thin film electrodes in comparison with that at other BDD thin film electrodes. The prepared BDD thin film electrodes without any modification were used to directly detect glucose in the basic solution. The results showed that the as-prepared BDD thin film electrodes exhibited good selectivity for detecting glucose in the presence of ascorbic acid (AA) and uric acid (UA). The higher sensitivity was observed on the BDND thin film grown on the boron-doped microcrystalline diamond (BDMD) thin film surface, and the linear response range, sensitivity and the low detection limit were 0.25–10 mM, 189.1 μA mmo^?1 cm^?2 and 25 μM (S/N=3) for glucose in the presence of AA and UA, respectively.     

Nanostructural properties of zinc oxide thin films grown on non‐planar substrates

The crystallographic structure of zinc oxide thin films grown on optical fibres using single source chemical vapour deposition (SSCVD) was analysed using near edge X‐ray absorption fine structure (NEXAFS). Zinc diethyl carbamate was used as a precursor for the growth of highly conformal films in a one‐step deposition process without substrate rotation and at substrate temperatures of 400–575 °C. It was found that the growth temperatures greatly affected the crystallographic structure of the film with no preferred crystallographic orientation and negligible crystallinity at low temperatures and very high crystallinity with pure c‐axis orientation at high temperatures. Cross‐sectional analysis of the films by scanning electron microscopy (SEM) showed the presence of a film at all points around the fibre. These films generally consisted of densely packed columns that bore a strong resemblance to c‐axis‐oriented films grown on planar substrates. Copyright © 2005 John Wiley & Sons, Ltd.     

Study of the Interface Microstructures of CVD Diamond Films by TEM

 The characteristics of the interface microstructures between a CVD diamond film and the silicon substrate have been studied by transmission electron microscopy and electron energy loss spectroscopy. The investigations are performed on plan-view TEM specimens which were intentionally thinned only from the film surface side allowing the overall microstructural features of the interface to be studied. A prominent interfacial layer with amorphous-like features has been directly observed for CVD diamond films that shows a highly twinned defective diamond surface morphology. Similar interfacial layers have also been observed on films with a <100> growth texture but having the {100} crystal faces randomly oriented on the silicon substrate. These interfacial layers have been unambiguously identified as diamond phase carbon by both electron diffraction and electron energy loss spectroscopy. For the CVD diamond films that exhibit heteroepitaxial growth features, with the {100} crystal faces aligned crystallographically on the silicon substrate, such an interfacial layer was not observed. This is consistent with the expectation that the epitaxial growth of CVD diamond films requires diamond crystals to directly nucleate and grow on the substrate surface or on an epitaxial interface layer that has a small lattice misfit to both the substrate and the thin film material.     

Process study of thermal plasma chemical vapor deposition of diamond,part I: Substrate material,temperature, and methane concentration

Effects of process parameters on diamond film synthesis in DC thermal plasma jet reactors are discussed including substrate material, methane concentration and substrate temperature. Diamond has been deposited on silicon, molybdenum, tungsten, tantalum, copper, nickel, titanium, and stainless steel. The adhesion of diamond film to the substrate is greatly affected by the type of substrate used. It has been found that the methane concentration strongly affects the grain size of the diamond films. Increased methane concentrations result in smaller grain sizes due to the increased number of secondary nucleations on the existing facets of diamond crystals. Substrate temperature has a strong effect on the morphology of diamond films. With increasing substrate temperature, the predominant orientation of the crystal growth planes changes from the (111) to the (100) planes. Studies of the variation of the film quality across the substrate due to the nonuniformity of thermal plasma jets indicate that microcrystalline graphite formation starts at the corners and edges of diamond crystals when the conditions become unfavorable for diamond deposition.     

Free-standing boron doped CVD diamond films grown on partially stabilized zirconia substrates

Boron doped diamond films have been grown adhered to silicon substrates by chemical vapor deposition using boron containing gases. In this work it was shown that it is possible to grow free-standing boron doped CVD diamond films on partially stabilized zirconia substrates using boron powder as the source for doping. Results from Raman spectroscopy confirmed the boron incorporation with concentration up to ∼10²⁰ cm⁻³. X-ray diffraction and scanning electron microscopy showed that the effect of boron incorporation in the microstructure of the diamond film is negligible. The measurement of the resistivity as a function of temperature confirmed the semiconductor behavior, as expected for p-type diamond.     

Nanocrystalline Diamond Thin Films Synthesis on Curved Surface

Thin films of curved surface nanocrystalline diamond (CS-NCD) are a category of important materials. However, the development of such materials is still a highly challenging task. Here we present a novel approach to synthesizing CS-NCD thin films deposited on non-spherical surfaces of molybdenum substrate using direct current plasma jet chemical vapor deposition. A special cooling system was designed and applied to ensure uniform substrate temperature. It is demonstrated from simulation and experimental results that this system is favorable for the production of thin films. The results show that the quality of CS-NCD thin films depends on the selection of optimal values of parameters including CH₄ concentration, substrate temperature, and chamber pressure. If the CH₄ concentration and/or the substrate temperature is too high or low, it results in non-diamond phase or micron-crystalline diamond thin films. Synthetic CS-NCD thin films using the proposed method have a smooth surface and uniform thickness. The average grain size and the mean surface roughness are approximately 30 and 4.3 nm respectively. Characteristics of CS-NCD thin film spectra comprised of the full width at half maximum with broad Raman peaks around 1,140 and 1,480 cm^?1, confirming the presence of the NCD phase.     

Imaging SIMS for the investigation of substrate surfaces for CVD diamond deposition

The influence of substrate surface preparation on diamond nucleation is a major topic in the investigation of CVD-diamond deposition. The substrate, polishing material, its grain size, and the resulting surface roughness all influence diamond nucleation. Diamond can nucleate at scratches or residues of the polishing process which are providing nucleation sites. In this paper the surface of molybdenum and substrates polished with SiC and diamond powder was studied by imaging (2- and 3-dimensional) secondary ion mass spectrometry. The distribution and grain size of polishing residues (SiC, diamond) were determined and the reaction of diamond with the substrate during heating to deposition temperature was investigated. In this case a laterally inhomogeneous system of carbon containing species had to be characterized. Therefore compound-specific secondary ion mass spectrometry had to be performed. The results suggested that diamond residues on molybdenum substrates are partly dissolved during the heat treatment. The measurements indicate that a fraction of the diamond residues is still present after heat treatment and can provide nucleation sites for diamond deposition.     

Electrodes of synthetic diamond: The effects of Ti substrate pretreatment on the electrode properties

The electrode properties of boron-doped diamond thin films grown on Ti substrates by a hot-filament chemical vapor deposition technique are evaluated. The Ti substrate surface modifying conditions are devised, involving the surface roughening, annealing, and etching, which effectively improve the diamond electrode properties. The preetching of the Ti substrate produces the titanium hydride layer that can affect the boron-doped diamond film growth significantly. The substrate roughened surface obviously improved the diamond film adhesion and reduced the inner stress. The electrodes reveal minimal background current and better stability. A wider potential window, up to 3 V, is observed for the boron-doped diamond on the etched/annealed samples. The electrochemical activity of the electrodes in the Fe(CN) ₆ ^3-/4- redox system somewhat increases with increasing surface roughness. The apparent increase in the reversibility of the reaction may be explained by the decrease in the true current density. Suitability of the Ti-based boron-doped diamond electrodes for electroanalytical applications is exemplified by sensing the trace metal ions, such as Hg²⁺ and Pb²⁺.__________From Elektrokhimiya, Vol. 41, No. 4, 2005, pp. 387–396.Original English Text Copyright © 2005 by Pleskov, Evstefeeva, Krotova, Lim, Chu, Ralchenko, Vlasov, Kononenko, Varnin, Teremetskaya, Shi.This article was submitted by the authors in English.     

Cathodoluminescence investigation of residual stress in Er3+:YAlO3 thin films grown on (110) SrTiO3 substrate by metal-organic chemical vapor deposition

YAlO3 thin films doped with different amounts of Er3+ have been grown directly onto (110) SrTiO3 substrate using the metal-organic chemical vapor deposition method (MOCVD). X-ray diffraction patterns and the rocking curve of the (002) reflection point to the growth of <001>-oriented YAlO3 phase. Piezo-spectroscopic (PS) biaxial calibration was performed on two luminescence bands, related to transitions from the (4)S3/2 excited state, using a specially designed ball-on-ring loading jig. Such a PS calibration allowed us to retrieve the rate of wavelength shift with stress without separating the grown film from the substrate. The outcome of the PS calibration has been applied to build up in the field emission scanning electron microscope (FEG-SEM) high-resolution maps of the residual stress field developed in the film. Results indicate that the residual stress in Er3+:YAlO3 films were compressive in nature and increased with increasing Er3+ dopant concentration.     

Nanofriction properties of molecular deposition films

The nanofriction properties of Au substrate and monolayer molecular deposition film and multilayer molecular deposition films on Au substrate and the molecular deposition films modified with alkyl-terminal molecule have been investigated by using an atomic force microscope. It is concluded that ( i ) the deposition of molecular deposition films on Au substrate and the modification of alkyl-terminal molecule to the molecular deposition films can reduce the frictional force; (ii) the molecular deposition films with the same terminal exhibit similar nanofriction properties, which has nothing to do with the molecular chain-length and the layer number; (iii) the unstable nanofriction properties of molecular deposition films are contributed to the active terminal of the molecular deposition film, which can be eliminated by decorating the active molecular deposition film with alkyl-terminal molecule, moreover, the decoration of alkyl-terminal molecule can lower the frictional force conspicuously; (iv) the relat     

Diamond/porous titanium three-dimensional hybrid electrodes

Hybrid three-dimensional electrodes produced from microcrystalline boron-doped diamond (BDD) and/or nanocrystalline diamond films were grown on porous titanium (Ti) substrate by hot filament chemical vapor deposition (HFCVD) technique. Powder metallurgy technique was used to obtain the Ti substrates provided by interconnected and open pores among its volume. Diamond growth parameters were optimized in order to provide the entire substrate surface covering including the deeper surfaces, pore bottoms, and walls. The morphology and structure of these electrodes were studied by scanning electron microscopy (SEM) and visible Raman spectroscopy techniques, respectively. Electrochemical response was characterized by cyclic voltammetry measurements. Results showed a wide working potential window and low background current characteristic of the diamond electrodes. The kinetic parameters also pointed out to a quasi-reversible behavior for these hybrid three-dimensional diamond/Ti electrodes.     

Growth rate studies of CVD diamond in an RF plasma torch

This paper addresses the complex chemistry in the boundary later over a substrate in a chemical vapor deposition rector at atmospheric pressure. In this study, a highspeed plasma (140m/s) was created using a radio-frequency inductively coupled plasma torch for the deposition of diamond thin films. Growth rates on the order of 50 m/ h were obtained for well-faceted continuous films grown on molybdenum substrates positioned normal to the plasma flow. The highest growth rates were obtained at substrate temperatures of 1370 K and a feed gas ratio of 2.5% CH₄ in H₂. Growth rates are compared to predicted results obtained from numerical simulations, based on a one-dimensional stagnation-point flow, and are/mend to be in good agreement. Several other surface analysis techniques were used to characterize the deposited films, inchaling SEA/, Raman spectroscopy, transmission electron microscopy. Rutherfard backscattering spectroscopy, and hydrogen-forward recoil spectroscopy. Optical emission spectroscopy was used to characterize the RF plasma during the deposition process. Results from these studies form an important database for the validation and improvement of current models of the atmospheric-pressure diamond CVD environment.     

Surface sol–gel synthesis of silica films on polyimide substrate

Silica films were grown on polyimide substrate using surface sol–gel reaction, and the film growth process was characterized by ellipsometry, atomic force microscopy, and X-ray photoelectron spectroscopy. On the activated polyimide surface, silica film was grown by sequential immersion in SiCl₄ solution and H₂O. The thickness of silica films is linear with the depositing cycle, about 5.0 nm per cycle. The silica films present an island-like growth type and are not a strict equilibrium SiO₂ structure. Moreover, the result of the tensile test suggests that the silica films have a good adhesion to the polyimide substrate.     

Magnetic characteristics of Fe4N epitaxial films grown by halide vapor phase deposition under atmospheric pressure

The thin films of Fe₄N, which were prepared by atmospheric pressure halide vapor phase deposition, were epitaxially grown on a MgO(100) substrate and have cubic structure with good crystallinity. The magnetic characteristics of Fe₄N epitaxial film show soft magnetic behavior under various temperatures and various external magnetic field directions. As the temperature is decreased, the saturation magnetization increases. Also, the magnetized behavior is observed when the magnetic field is applied parallel to the film plane. It was found that the magnetic moments of Fe₄N epitaxial film are facing parallel to the film plane.     

ITO和ZnO基底对电化学沉积氧化亚铜薄膜的形貌、结构的影响及作用机制

采用电化学恒电位沉积方法在ITO导电玻璃上和在ZnO薄膜上沉积氧化亚铜(Cu₂O),并通过X射线衍射(XRD)和扫描电镜(SEM)对晶体的微观结构和表面形貌进行了分析.在ZnO基底上沉积得到了纳米级的Cu₂O粒子并且具有明显择优取向,而在ITO导电玻璃上仅得到粒径为2—5μm的Cu₂O粒子,没有明显的择优取向.对薄膜的生长机理进行了讨论.     

Growth and characterization of ultrathin carbon films on electrodeposited Cu and Ni

Ultrathin carbon films were grown on different types of metallic substrates. Free‐standing foils of Cu and Ni were prepared by electroforming, and a pure Ni film was obtained by galvanic displacement on a Si wafer. Commercial foil of Ni 99.95% was used as a reference substrate. Carbon films were grown on these substrates by chemical vapour deposition in a CH₄‐H₂ atmosphere. Obtained films were characterized by Raman spectroscopy, X‐ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, and ultraviolet photoemission spectroscopy. The XPS at grazing collection angle was used to determine the thickness of carbon films. Depending on the deposition parameters, the films of graphene or graphite were obtained on the different substrates. The uniformity of graphene and its distribution over the sample area were investigated from Raman data, optical images, and XPS chemical maps. The presence of graphene or graphite in the films was determined from the Raman spectra and Auger peak of C KVV. For this purpose, the D parameter, which is a fingerprint of carbon allotropes, was determined from C KVV spectra acquired by using X‐rays and electron beam. A formation of an intermediate layer of metal hydroxide was revealed in the samples with graphene overlayer.     

X-ray diffraction area mapping of preferred orientation and phase change in TiO2 thin films deposited by chemical vapor deposition

This paper reports on an investigation into the formation of TiO(2) thin films, whereby X-ray diffraction is used to map systematic changes in preferred orientation and phase observed throughout the films. The key to this strategy is the recording of X-ray diffraction patterns of specific and isolated areas of a substrate, ensuring this specificity by the use of a small X-ray sample illumination area (approximately 3-5 mm(2)). A map of the variation in film composition can then be built up by recording such diffraction patterns at regular intervals over the whole substrate. Two titania films will be presented, grown using atmospheric pressure chemical vapor deposition, at 450 and 600 degrees C, from TiCl(4) and ethyl-acetate precursors. The film grown at 450 degrees C showed a systematic change in preferred orientation, while the film grown at 600 degrees C was composed of a mixture of the rutile and anatase phases of TiO(2) with the ratio of these phases altering with position on the substrate. The results of physical property measurements and electron microscopy carried out on the films are also reported, conducted at locations identified by the X-ray diffraction mapping procedure as having different compositions, and hence different physical responses. We found that the photocatalytic activity and hydrophobicity were dependent on the rutile:anatase ratio at any given location on the film.     

Deposition of Diamond-like Carbon Films using Graphite Sputtering in Neon Dense Plasma

This paper reports the deposition of diamond-like carbon (DLC) films on Si <100>, using a low energy (1.45 kJ) dense plasma focus assisted sputtering of graphite insert at the tip of the tapered anode. The substrates are placed in front of the anode at different axial and angular positions and are exposed to multiple focus shots. The information regarding the DLC structure is acquired by using Raman spectroscopy. The spectra are characterized by two broad bands known as “G-band” and “D-band”. The results point towards the formation of DLC films with both sp³ (diamond like) and sp² (graphite like) domains. In X-ray diffraction (XRD) pattern, no additional peak is observed except a peak at 2θ = 69° which corresponds to the silicon (Si) substrate. The intensity of Si peak is reduced after treatment indicating the deposition of amorphous carbon. Scanning electron microscopy (SEM) results demonstrate that the smoothness of the film increases with increasing the substrate angular positions with respect to the anode axis. Energy dispersive X-ray (EDX) analysis reveals that the films deposited at lower axial and angular positions are thicker which is complemented by the cross-sectional views of the films.