极性晶体中与形变势相互作用的表面极化子

有不少的极性晶体,电子与表面光学(SO)声子耦合强,但与表面声学(SA)声子耦合弱.研究电子与SO声子耦合强,与SA声子耦合弱的极性晶体中与形变势相互作用的表面极化子的性质.采用改进了的线性组合算符和微扰法导出了极性晶体中与形变势相互作用的表面极化子的有效哈密顿量.在计及电子在反冲效应中发射和吸收不同波矢的声子之间的相互作用时,讨论对表面极化子的有效哈密顿量、有效质量和有效相互作用势的影响.     

声子色散和磁场对极性晶体中极化子自陷能的影响

利用线性组合算符和幺正变换相结合的方法,研究了声子色散和磁场对极性晶体中极化子振动频率和自陷能的影响.计及纵光学(LO)声子色散,在抛物近似下导出了极性晶体中极化子自陷能随电子-纵光学声子耦合常数、回旋共振频率和声子色散系数之间的变化关系.数值计算结果表明极化子自陷能随电子-纵光学声子耦合常数、回旋共振频率和声子色散系数的增大而增大.     

极性晶体中表面极化子的温度效应

有不少的极性晶体,电子与体纵光学声子的耦合弱,但与表面光学声予的耦合强.本文讨论电子和体纵光学声子耦合弱,与表面光学声子耦合强时对表面极化子的温度特性的影响,用线性组合算符法研究表面极化子的振动频率、诱生势和有效质量的温度依赖性.对AgBr晶体进行了数值计算,结果表明极化子的振动频率,诱生势和有效质量随温度的升高而减小.     

极性晶体膜中强耦合激子的性质

在强耦合极化子模型基础上,采用Lee-Low-Pines(LLP)变分法研究了极性晶体膜中激子与表面光学(SO)声子强耦合、与体纵光学(LO)声子弱耦合体系的性质.讨论了极性晶体膜中激子的诱生势与膜厚度和温度的变化关系.结果表明:激子的诱生势不仅与电子-空穴间距离有关,而且与极性晶体膜厚度有关,同时温度对激子诱生势的影响十分显著.     

多原子半无限晶体中表面极化子的内部激发态

研究多原子半无限晶体中电子与表面光学(SO)声子耦合强,而与体纵光学(LO)声子耦合弱的极化子的激发态性质.采用线性组合算符和幺正变换方法导出与SO声子耦合强而与LO声子耦合弱情形下极化子的基态能量、第一内部激发态能量和激发能量.结果表明,多原子半无限晶体中与SO声子耦合强,而与LO声子耦合弱的极化子的基态能量、第一内部激发态能量不仅包含不同支LO声子和不同支SO声子与电子耦合的能量,而且也包含不同支SO声子之间相互作用贡献的附加能量.激发能量与体纵光学声子无关.     

极性晶体膜中束缚极化子的有效质量

采用线性组合算符法和变分法,讨论了极性晶体膜中电子与SO声子耦合强,与LO声子耦合弱的电子-声子相互作用系统的有效质量.得出了束缚极化子的有效质量随膜厚的变化规律.对KCl材料进行数值计算的结果表明,不同支声子与电子相互作用对有效质量的贡献并不相同,而且由于束缚势的存在,使有效质量增大.     

极性倍频晶体中的相干喇曼混频

本文建立了极性倍频晶体中极化声子相干喇曼混频的耦合波方程,其中考虑了超喇曼极化率β_R.该方程在小信号、声子近似以及喇曼驱动的参量近似下求解.结果表明:在高强度泵浦光受激喇曼散射的相干驱动下,极性倍频晶体可以在泵浦光倍频附近产生极化声子的相干喇曼光束.这种光束可以通过不同的相干喇曼混频过程,由倍频光直接转换,或由基波光直接转换,还可以由倍频光与基波光共同转换而成.这三种转换过程具有各自不同的相位失配因子.在一定条件下,后两种过程可以同时进行.在LiIO_3晶体中证实了上述的结论.实验中泵浦光强度约3.0×10~9W/cm~2.     

离子型声子晶体的光学性质

提出了离子型声子晶体的概念,发展了相应的理论：在实验上证实了离子型声子晶体中存在超晶格振动与电磁波的强烈耦合,观察到原先存在于离子晶体中的极化激元等长波光波行为;预言了一些可能的物理效应,离子型声子晶体超晶格振动和电磁波的耦合方程与黄昆方程在形式上完全一致,说明了超晶格与实际晶格在物理上的相似性。     

通过形变势弱耦合表面极化子的重整化质量

采用推广的线性组合算符法和拉格郎 日乘子法研究了晶体中电子与SO声子和SA声子均为弱耦合极化子的重整化质量。结果表明,当电子接近晶体表面时,电子和表面声学声子耦合要比电子与表面光学声子的耦合弱。而且都与Debye截止波数有关;当极化子远离晶体表面时,电子－SO声子相互作用和电子－SA声子相互作用对极化子的重整化质量的影响可以不计,这时电子与体声子的相互作用对极化子重整化质量的贡献是主要的。     

强耦合极化子的温度依赖性

本文研究极性晶体中强耦合光极化子的性质,采用Huybrechts线性组合算符法.得到了有限温度下强耦合光极化子的基态能量.文中对RbCl晶体进行数值计算.结果表明,极化子的振动频率、平均数和基态能量随温度的升高而增加.     

Electron-phonon interaction in hemispherical quantum dot

Within the framework of the dielectric continuum (DC) model, the optical phonon modes and electron-optical-phonon interaction in hemispherical quantum dot are investigated. The proper eigenfunctions for longitudinal optical (LO) and interface optical (IO) phonon modes are constructed. After having quantized the eigenmodes, we derive the Hamiltonian operators describing the LO and IO phonon modes as well as the corresponding Fröhlich electron-phonon interaction. The dispersion relation of IO phonon modes is size independent. The potential applications of these results are also discussed.     

极化子在正弦色散声子场中的性质

本文计及纵光学声子的色散,在正弦近似下,用微扰法了多原子晶体中极化子的基态能量,有效质量和自能。     

介电界面系统的电-声子相互作用

本文应用体极化电荷和面极化电荷产生的宏观电势导出了极化本征矢量遵从的积分和微分方程。证明了极化本征矢量应按正文中的正交归一关系(18)归一化,并导出了双层界面系统的极化本征模的哈密顿量及其与荷电粒子相互作用哈密顿量的算符表示形式。证明了电子与P-偏振SO声子的相互作用可用电子与有效频率为ωeff,±SO的SO声子的相互作用耦合常数α±SO表征;电子与P-偏振LO声子相互作用在性质上是电子与它所在的介质的体LO声于的相互作用,但被面效应减弱了。     

Phonon polariton modes in semiconductor superlattices

Phonon polariton modes in semiconductor superlattices are studied. Polariton electric fields and the dispersion relation are derived by electromagnetic theory, and due to periodicity in the direction normal to the superlattice layers, Bloch's theorem is applied. Polariton modes are found to exist between the TO and LO phonon frequencies, and approach the surface polariton frequency in the limit of large tangential wave vectors. The frequencies are also strongly dependent on the ratio of the layer thicknesses. Results are illustrated by a GaAsGaP superlattice.     

Electron–phonon interaction in fan-shaped quantum dot and quantum wire

The optical phonon modes and electron–optical-phonon interaction in fan-shaped quantum dot and quantum wire are studied with the dielectric continuum (DC) model and separation of variables. The explicit expressions for the longitudinal optical (LO) and interface optical (IO) phonon eigenmodes are deduced. It is found that there exist two types of IO phonon modes: top interface optical (TIO) phonon mode and arc interface optical (AIO) phonon mode, in a fan-shaped quantum dot. After having quantized the eigenmodes, we derive the Hamiltonian operators describing the LO and IO phonon modes as well as the corresponding Fröhlich electron–phonon interaction. The potential applications of these results are also discussed.     

Hole-interface optical phonon relaxation rates with valence band-mixing effects

We theoretically investigate the hole-interface optical phonon scattering rates for a InGaAs-AlGaAs quantum well structure, taking into account the valence-band mixing. The dispersion relation and the electrostatic potentials for interface optical phonon modes are obtained based on the macroscopic dielectric continuum model. For the hole dispersion relation, the Luttinger-Kohn Hamiltonian is used. The hole-interface optical phonon interaction is evaluated by the Fermi's golden rule taking into account the Bloch overlap factor.Our results show that the hole-interface phonon scattering rates within the parabolic band approximation are different from those including valence band mixing effects. Especially, in the low energy region, the hole-interface phonon scattering rates within the parabolic band approximation are overestimated very significantly.     

柱形量子线中体纵光学声子平均数

考虑电子与体纵光学声子相互作用时,采用LLP变分方法,研究柱形量子线中极化子性质,导出了柱形量子线中极化子光学声子平均数随量子线截面半径和电子-LO声子耦合强度的变化关系.结果表明柱形量子线中极化子的光学声子平均数随量子线截面半径减小而减小,随电子-LO声子耦合强度增强而增加.     

静压下(CdTe)_2(ZnTe)_4-ZnTe多量子阱结构的多声子共振拉曼散射

用加静高压的方法改变光学能隙来实现共振条件。在以(CdTe)_2(ZnTe)_4短周期超晶格为阱层,(ZnTe)_(4)为垒层的多量子阱结构中观察到高达四阶的类 ZnTe 纵光学声子模的多声子共振拉曼散射。通过对拉曼位移随压力变化的分析,发现在与(CdTe)_2(ZnTe)_4短周期超晶格共振时测得的类ZnTe 纵光学声子模的频率比与 ZnTe 势垒层共振时测得的 ZnTe 纵光学声子模的频率低4cm~(-1)。并将它归结为在短周期超品格中纵光学声子模的限制效应。在与短周期超品格严格的2LO 声子出射共振条件下观察到了类 CdTe 的2LO 声子的共振拉曼峰。     

Phonon dispersion relations of crystalline solids based on LAMMPS package

The phonon dispersion relations of crystalline solids play an important role in determining the mechanical and thermal properties of materials. The phonon dispersion relation, as well as the vibrational density of states, is also often used as an indicator of variation of lattice thermal conductivity with the external stress, defects, etc. In this study, a simple and fast tool is proposed to acquire the phonon dispersion relation of crystalline solids based on the LAMMPS package. The theoretical details for the calculation of the phonon dispersion relation are derived mathematically and the computational flow chart is present. The tool is first used to calculate the phonon dispersion relation of graphene with two atoms in the unit cell. Then, the phonon dispersions corresponding to several potentials or force fields, which are commonly used in the LAMMPS package to modeling the graphene, are obtained to compare with that from the DFT calculation. They are further extended to evaluate the accuracy of the used potentials before the molecular dynamics simulation. The tool is also used to calculate the phonon dispersion relation of superlattice structures that contains more than one hundred of atoms in the unit cell, which predicts the phonon band gaps along the cross-plane direction. Since the phonon dispersion relation plays an important role in the physical properties of condensed matter, the proposed tool for the calculation of the phonon dispersion relation is of great significance for predicting and explaining the mechanical and thermal properties of crystalline solids.     

Polar Interface Optical Phonon Modes and Fr(o*)hlich Electron-Phonon Interaction Hamiltonians in an Arbitrary Layer-Number Quantum Well System

By using determinant method as in our recent work, the IO phonon modes, the orthogonal relation forpolarization vector, electron-IO phonon Frohlich interaction Hamiltonian, the dispersion relation, and the electron-phonon coupling function in an arbitrary layer-number quantum well system have been derived and investigated withinthe framework of dielectric continuum approximation. Numerical calculation on seven-layer Alx Ga1-x As/GaAs systemshave been performed. Via the numerical results in this work and previous works, the general characters of the IO phononmodes in an n-layer coupling quantum well system were concluded and summarized. This work can be regarded as ageneralization of previous works on IO phonon modes in some fixed layer-number quantum well systems, and it providesa uniform method to investigate the effects of IO phonons on the multi-layer coupling quantum well systems.