Peculiarities of the giant injection magnetoresistance in the Ni-polymer-Cu system

The contribution of spin-polarized electrons, injected from a ferromagnet to a polymer, to the giant magnetoresistance has been investigated for the ferromagnet-polymer-nonmagnetic metal system. It is established that, at complete depolarization of injected electrons, magnetic field does not affect the conductivity of the system. The electric field effect (significant decrease in the threshold magnetic field) on the parameters of giant injection magnetoresistance is established.     

Resistance peak and giant magnetoresistance of degenerate ferromagnetic semiconductors with arbitrary spin polarization

The temperature peak of the resistance and the giant magnetoresistance of degenerate ferromagnetic semiconductors with an arbitrary degree of electron spin polarization are investigated. The spin-wave and paramagnetic domains are considered. The calculations are based on the notion of the magnetic-impurity scattering of carriers. Fiz. Tverd. Tela (St. Petersburg) 39, 1589–1593 (September 1997)     

Universal relationship between giant magnetoresistance and anisotropic magnetoresistance in spin valve multilayers

We measure the giant magnetoresistance (GMR) with the current both parallel and perpendicular to the direction of the magnetization in the ferromagnetic (FM) layers and thus probe the anisotropy of the effective mean free paths for the spin-up and spin-down electrons, seen in the anisotropic magnetoresistance. We find that the difference of the GMR in the two configurations, when expressed in terms of the sheet conductance, displays a nearly universal behavior as a function of GMR. On interpreting the results within the Boltzmann transport formalism we demonstrate the importance of bulk scattering for GMR.     

Modeling the effect of spin polarization of magnetic moments of electrons on crossover formation

We present the results from investigations of the effect of spin polarization on crossover formation in electron microscopes. Spatial distributions of magnetic states of electrons for the electron beams in the crossover of the electron gun are analyzed by the example of a self-consistent spin-polarization field. The factors able to affect the spatial resolving ability and sensitivity of scanning microscopy are evaluated.     

The spin polarization of conduction electrons in ferromagnetic semiconductors

Within the framework of the s?f exchange model the exact asymptotics of the spin polarization of conduction electrons in the non-degenerate ferromagnetic semiconductor at low temperatures is calculated. It is demonstrated that the temperature dependent corrections to the total density of states are proportional to $\text{T}{}^{\mathrm{<mtext>5</mtext><mtext>2</mtext>}}$.     

On the orientational dependence of giant magnetoresistance

The functional dependence of the giant magnetoresistance (GMR) with respect to the relative angle between the orientations of the magnetization in the magnetic slabs of a trilayer system is calculated by using the Kubo-Greenwood formula for electrical transport together with the fully-relativistic spin-polarized screened Korringa-Kohn-Rostoker method for semi-infinite systems and the coherent potential approximation. It is found that the functional dependence of the GMR is essentially of the form . Received 30 November 1998     

双合成反铁磁结构及其对自旋阀巨磁电阻效应的影响

用直流磁控溅射方法制备了双合成反铁磁结构Co₉₀Fe₁₀(5 nm)/Ru(x nm)/Co₉₀Fe₁₀(3 nm)/Ru(y nm)/Co₉₀Fe₁₀(5 nm)(x=0.45,0.45,1.00; y=0.45,1.00,1.00)的系列样品,并对样品的性能及其作为钉扎层对自旋阀巨磁电阻(GMR)效应的影响进行了研究 关键词： 双合成反铁磁 自旋阀 巨磁电阻     

自旋阀中的各向异性磁电阻效应

采用平面霍尔效应测量方法，对Ta(8nm)/NiFe(7nm)/Cu(24nm)/NiFe(44nm)/FeMn(14nm)/Ta(6nm)自旋阀多层膜进行了研究.结果表明，在样品中存在着自由层和被钉扎层之间的各向异性磁电阻的“混合”效应.与通常所采用的磁电阻测量方法相结合，平面霍尔效应的测 量可以给出自旋阀中各向异性磁电阻以及自由层和被钉扎层的磁矩随外场变化的更多信息. 关键词： 自旋阀 各向异性磁电阻 平面霍尔效应     

Structural effects in the growth of giant magnetoresistance (GMR) spin valves

An investigation has been made of the thin-film structure and interface morphology of giant magnetoresistance (GMR) spin valves of the cobalt/copper/cobalt (Co/Cu/Co) type that were grown on polycrystalline NiO substrates at three different temperatures (150, 300 and 450 K). Sputter-depth-profile analyses indicate that the quality of the layering in the Co/Cu/Co structure was only slightly better for the 150 K sample than for the 300 K sample. For the 450 K sample, however, the Co/Cu/Co structure showed extensive disruption. The similarity in the depth-profiles for the 150 and 300 K samples indicates the sensitivity of the GMR to subtle structural differences.     

Contactless measurement of the conductivity of two-dimensional electrons in the regime of microwave-induced giant magnetoresistance oscillations

Magnetic-field dependences of the conductivity of a two-dimensional electron system obtained by contact and contactless measurements in the regime of microwave-induced giant magnetoresistance oscillations have been comparatively analyzed. The contactless technique for studying the conductivity of two-dimensional electrons is based on measuring the attenuation of the RF signal propagating along a coplanar waveguide manufactured using lithography on the sample surface. It has been found that Shubnikov-de Haas oscillations of conductivity are observed in both techniques, whereas the microwave-induced giant magnetoresistance oscillations appear only in the contact measurements. This contradiction indicates that the contact and/or boundary regions of the two-dimensional system with a strong potential gradient play an important role for the observation of the induced magnetoresistance oscillations.     

Contactless measurement of the conductivity of two-dimensional electrons in the regime of microwave-induced giant magnetoresistance oscillations

JETP Letters - Magnetic-field dependences of the conductivity of a two-dimensional electron system obtained by contact and contactless measurements in the regime of microwave-induced giant...     

Structure of the spin polarization spectrum of secondary electrons emitted from nickel

The main features of the structure observed in the energy resolved spin polarization of secondary electrons emitted from Ni are interpreted in terms of surface and bulk plasmon assisted emission. The model also predicts a measurable shift of the main polarization peak of about 0.3 eV to lower energies as the temperature is raised from room temperature to closely below the Curie temperature.     

In-plane anisotropy of tunneling magnetoresistance and spin polarization in lateral spin injection devices with (Ga,Mn)As/GaAs spin-Esaki diode contacts

We report here on in-plane anisotropy observed in the tunneling magnetoresistance of (Ga,Mn)As/n⁺-GaAs Esaki diode contacts and in the spin polarization generated in lateral all-semiconductor, all-electrical spin injection devices, employing such Esaki-diode structures as spin aligning contacts. The uniaxial component of the registered anisotropies, observed along [1 1 0] directions, does switch its sign as an effect of the applied bias, however the switching occurs at different bias values for magnetoresistance and for spin polarization cases.     

The effect of dimerization on the magnetoresistance in organic spin valves

The effect of lattice dimerization on the magnetoresistance (MR) in organic spin valves is investigated based on the Su-Schrieffer-Heeger (SSH) model and the Green's function method. By comparing with the results for a uniform chain, we find that the dimerization of the molecular chain modifies the monotonic dependence of the MR on the bias to an oscillatory one. A sign inversion of the MR is observed when the amplitude of the dimerization is adjusted. The results also show that at a low bias, the MR through a dimerized chain decreases with the increasing bias as well as the increasing chain length, which is consistent with the experimental reports. A further understanding can be achieved by analyzing the electronic states and the spin-dependent transmission spectrum with the parallel and antiparallel magnetization orientations of the two ferromagnetic electrodes.     

Optical probing of spin polarization of electrons in quantum dot edge channels

We propose an optical method for the investigation of the quantum dot edge channels by utilizing circularly polarized photoluminescence in the integer-quantum-Hall-effect regime. One of the advantages of our method is that the degree of the spin-polarization of the electrons in the inner- and outer-compressible liquids can be probed separately. The observed polarized photoluminescence spectra can be explained by the calculated electron spin-dependent optical transition probabilities based on the local-spin density approximation.     

Annealing effect on magnetoresistance in NiO-Co-Cu based spin valves

We have fabricated two sets of NiO-Co-Cu based spin valves by the magnetosputtering technique with different deposition parameters. Magnetoresistance (MR) measurements show that the MR value for the NiO layer under the bottom of Co/Cu/Co spin valve (BSV) is larger than that for the NiO layer at the top of Co/Cu/Co (TSV). The MR value of BSV decreases with increasing annealing temperature in air or in vacuum, which disappears at the blocking temperature of NiO, i.e., about 250 °C. There is maximum MR value for TSV annealing at a temperature range from room temperature to 350 °C. The different thermal behavior for BSV and TSV is explained by the competition between the interface roughness of NiO/Co, which was determined by the grazing incident X-ray reflectivity and X-ray diffuse scattering, and the coupling effect between Co layer and NiO layer. PACS 68.60.Dv; 61.10.Eg; 68.35.Ct; 73.43.Qt; 75.25.+z     

New intensity magneto-optical effect in materials exhibiting giant magnetoresistance

The change in the reflectivity of a metallic magnetic multilayer that exhibits giant magnetoresistance for a monochromatic electromagnetic plane wave with polarization along the magnetization (s polarization) in response to a change from the antiferromagnetic magnetic configuration of the multilayer to the ferromagnetic configuration is investigated. This magneto-optical effect is treated in the effective-medium approximation, in which the dielectric constant needed is found analytically with consideration of the interface roughness scattering of electrons. It is shown in the example of an Fe/Cu multilayer that the effect amounts to ∼0.7%. The representation found for the complex conductivity is convenient in a special case for investigating the magnetoresistive effect. Zh. éksp. Teor. Fiz. 114, 1101–1114 (September 1998)     

自旋场效应晶体管中隧道磁阻的势垒相关反转效应

考虑自旋场效应晶体管中Rashba自旋轨道相互作用和自旋输运量子相干性,研究了势垒强度对自旋场效应晶体管的自旋相关量子输运的影响. 研究发现,势垒强度较低时,隧道结电导随Rashba自旋轨道相互作用强度的变化呈现明显的振荡现象,势垒强度较高时,电导表现出明显的势垒相关“电导开关”现象. 当势垒强度逐渐增强时,平行结构电导呈现出单调下降趋势,而反平行结构电导产生波动,这种波动导致该隧道磁阻也随势垒强度的变化表现出振荡现象,且在合适的准一维电子气厚度情况下隧道磁阻值可以产生正负反转,这个效应将会在基于自旋的电子器件信息的存储上获得应用. 关键词： 自旋场效应管 开关效应 量子相干 隧道磁阻     

Role of hydrogen in giant spin polarization observed on magnetic nanostructures

We demonstrate that the giant spin contrast observed by scanning tunneling microscopy for double-layer Coislands on Pt(111) is caused by adsorbates at the apex of the Cr-coated W tip. The most likely candidate, in ab initio simulations, is hydrogen. Here, the electron charge is highly polarized by the adjacent Cr layers. The hydrogen adsorption site is shown to change from hollow to on top due to the electric field at the tip apex, created by the tunnel voltage.