微纳尺度俄歇电子能谱新技术开发及其应用进展

随着纳米结构材料的广泛应用,新型微纳尺度表征技术成为纳米科学技术发展的重要途径。本文基于局域电子信息全面性的思想,从俄歇电子能谱的原理出发,理论推导出俄歇价电子能谱的简明表述方式,确定俄歇价电子能谱与微观电子结构信息的内在联系和物理意义,建立了俄歇电子能谱探测微区一系列宏观参量的新技术。其中应力测量技术的空间分辨率可优于20nm,为微纳尺度力学测量的发展提供了重要的方法;非接触性的局域电学性质测量技术,超越了传统电学测量方法的思想框架,实现了无外场驱动的电荷密度分布、电场分布等本征电学性质表征、以及半导体异质结构整个空间区域的能带构造;结构相的测定技术,使纳米微区材料的晶体结构相识别成为可能;半导体微区导电类型测定技术,延续了非接触性电学测量的优点,并且能够灵活地探测分析复杂光电器件结构中不同区域的导电类型分布。通过实际应用于侧向外延GaN不同区域、AlxGa1-xN/GaN超晶格量子阱结构、ZnO纳米颗粒等纳米尺度复杂体系的微区宏观性质探测,获得应力/应变、电荷密度/电场、结构相以及导电类型及其分布等结果,验证了所建立的测量技术的有效性和可靠性。     

微纳尺度俄歇电子能谱新技术开发及其应用进展

随着纳米结构材料的广泛应用,新型微纳尺度表征技术成为纳米科学技术发展的重要途径.本文基于局域电子信息全面性的思想,从俄歇电子能谱的原理出发,理论推导出俄歇价电子能谱的简明表述方式,确定俄歇价电子能谱与微观电子结构信息的内在联系和物理意义,建立了俄歇电子能谱探测微区一系列宏观参量的新技术.其中应力测最技术的空间分辨率可优于20 nm,为微纳尺度力学测量的发展提供了重要的方法;非接触性的局域电学性质测量技术,超越了传统电学测量方法的思想框架,实现了无外场驱动的电荷密度分布、电场分布等本征电学性质表征、以及半导体异质结构整个空间区域的能带构造;结构相的测定技术,使纳米微区材料的晶体结构相识别成为可能;半导体微区导电类型测定技术,建续了非接触性电学测量的优点,并且能够灵活地探测分析复杂光电器件结构中不同区域的导电类型分布.通过实际应用于侧向外延GaN不同区域、AlxGa1-xN/GaN超晶格量子阱结构、ZnO纳米颗粒等纳米尺度复杂体系的微区宏观性质探测,获得应力/应变、电荷密度/电场、结构相以及导电类型及其分布等结果,验证了所建立的测量技术的有效性和可靠性.     

利用会聚束进行晶体倾转的方法

一、引言在物理系金属物理及材料科学专业的电子显微分析课中,用双倾台倾转晶体是一重要实验内容,也是学生在电镜实验中较难掌握的部分。以往的倾转方法是:首先得到选区电子衍射花样,再沿某一带轴进行倾转,在倾转过程中应保证带轴上的衍射斑点位置、强度不变,从而到达某主要位向。这种方法的缺点是:学生感到倾转方向不明确,空间概念不清晰,而且要花很长时间。虽然也可以通过选区电子衍射得到的菊池线进行倾     

超高真空俄歇电子能谱原位加热和GaN热效应研究

建立一套基于超高真空俄歇电子能谱的原位加热系统,对GaN薄膜进行热效应研究．随着温度的增加,Ga LMM和Ga MVV的动能减小．利用第一性原理计算,获得理论的GaMVV俄歇谱.加热过程由于晶格热膨胀以及表面原子再构引起价电子态密度发生变化,从而导致价带俄歇谱负移．     

氧化物薄膜研制中的电子能谱技术

随着科学技术的不断发展，人们正在寻求更新的实用材料．金属氧化物，包括金属氧化物薄膜的各种实用材料，在工业界、信息产业界和能源开发等方面的应用前景，早已引起国内外学者的极大关注．例如，由于氧化物具有各种特殊的介电和光学性质，研究和开发基于氧化物薄膜的气敏材料非常热门．如何制备出有实用价值的各种薄膜材料，是科学家们一直关心和深入研究的课题．电子能谱技术在各种材料的基础研究和实际应用中起着重要的作用．本文以有序金属氧化物薄膜研制为例，简要评述了电子能谱技术（包括X射线光电子能谱（XPS），紫外光电子能谱（UPS），俄歇电子能谱（AES）和高分辨电子能量损失谱（HREELS）），以及低能电子衍射（LEED）等技术在氧化物薄膜材料制备和表征中的应用．     

氧化物薄膜研制中的电子能谱技术

随着科学技术的不断发展,人们正在寻求更新的实用材料.金属氧化物,包括金属氧化物薄膜的各种实用材料,在工业界、信息产业界和能源开发等方面的应用前景,早已引起国内外学者的极大关注.例如,由于氧化物具有各种特殊的介电和光学性质,研究和开发基于氧化物薄膜的气敏材料非常热门.如何制备出有实用价值的各种薄膜材料,是科学家们一直关心和深入研究的课题.电子能谱技术在各种材料的基础研究和实际应用中起着重要的作用.本文以有序金属氧化物薄膜研制为例,简要评述了电子能谱技术（包括X射线光电子能谱（XPS）,紫外光电子能谱（UPS）,俄歇电子能谱（AES）和高分辨电子能量损失谱（HREELS））,以及低能电子衍射（LEED）等技术在氧化物薄膜材料制备和表征中的应用.     

分子束外延GaN薄膜的X射线光电子能谱和俄歇电子能谱研究

用XPS和AES电子能谱的方法对等离子体辅助分子束外延(MBE)生长的GaN薄膜进行了表面分析和深度剖析.发现红外分子束外延(RFMBE)生长的富镓GaN薄膜实际表面存在O和C吸附层,C主要为物理吸附,而O在GaN表面形成局域化学键产生氧络合物覆盖层,并形成一定的深度分布.杂质O在GaN带隙中导带底形成杂质带同时引入深受主能级,使得带隙变窄室温光吸收谱向低能方向移动,光致发光谱出现宽带发光峰.从而影响GaN薄膜的电学和光学性质 关键词： GaN薄膜 X射线光电子能谱 俄歇电子能谱 表面分析     

N掺杂对非晶C薄膜的电子结构与光学性质的影响

用直流磁控溅射法制备了非晶C薄膜及N掺杂非晶C(a-C∶N)薄膜,用紫外-可见分光光谱仪、椭圆偏振仪、俄歇电子能谱(AES)等对薄膜进行了检测。结果表明：随源气体中N气含量的增加,透过率和折射率变小, 而光学带隙先增大后减小; 当薄膜中N的含量很少,N的掺入对sp3杂化C起稳定作用,使得薄膜光学带隙E_g增大。而较高量N的掺入抑制了sp3杂化C的形成,提高了薄膜中sp2键含量,使得薄膜光学带隙变小。参数D定义为俄歇电子能谱(AES)中最大正峰和最低负峰之间的距离,用俄歇电子能谱中的D值来计算薄膜的sp2键的百分含量,俄歇电子能谱(AES)表征也表明：较高量的N的掺入抑制了sp3杂化C的形成。所以应该考虑在较低N分压条件下掺N来改善非晶C薄膜的光学性能。     

MBE生长氮化镓薄膜的X光电子谱和俄歇电子谱分析

用X光电子谱和俄歇电子能谱的方法对射频等离子体辅助分子束外延(MBE)技术生长的氮化镓(GaN)薄膜进行了表面分析和深度剖析.发现薄膜实际表面存在O和C吸附层,C主要为表面污染,而O形成一定的深度分布,从而影响氮化镓薄膜的电学和光学性质.     

超结构换热器网络综合优化的遗传/模拟退火算法-Ⅱ.遗传/模拟退火算法及应用

本文提出了用于换热器网络综合的改进的遗传/模拟退火算法.最优综合的模型基于本文第一部分所提出的通用解方法.所采用的遗传算法结合了模拟退火算法和爬山优化算法,同时引进精英策略和结构变异策略以增强算法的搜索能力.采用本文提出的算法对文献提出的算例进行了计算并得到了更好的结果.     

Holes drilling in gold and silver decahedral nanoparticles by the convergent beam electron diffraction electron beam

The 200?kV focused electron beam in the convergent beam electron diffraction patterns mode in a transmission electron microscope (TEM) with field emission gun is able to drill holes in gold and silver decahedral nanoparticles. However, although they are done under the same circumstances, the holes are shapeless in the silver and faceted in gold nanoparticles. In addition to this, the holes are closed during their high-resolution TEM observation in both materials. To comment their differences, displacement energy considerations are taken into account as function of the sputtering energy in order to modify the displacement cross-section of the processes.     

Silicidation in Ni/Si thin film system investigated by X-ray diffraction and Auger electron spectroscopy

Silicide formation induced by thermal annealing in Ni/Si thin film system has been investigated using glancing incidence X-ray diffraction (GIXRD) and Auger electron spectroscopy (AES). Silicide formation takes place at 870 K with Ni₂Si, NiSi and NiSi₂ phases co-existing with Ni. Complete conversion of intermediate silicide phases to the final NiSi₂ phase takes place at 1170 K. Atomic force microscopy measurements have revealed the coalescence of pillar-like structures to ridge-like structures upon silicidation. A comparison of the experimental results in terms of the evolution of various silicide phases is presented.     

GaP低阻欧姆接触层的AES和SIMS分析

本文用AES和SIMS分析讨论了p-GaP与三层金属膜Pd/Zn/Pd形成良好欧姆接触层的性质.     

A method for determining foil thicknesses in TEM by using convergent beam electron diffraction under weak beam conditions

In the present work, convergent beam electron diffraction was studied in zirconium (a material of intermediate atomic number) at 300 keV, under weak beam diffraction conditions. For a particular thickness, the details in an observed low order disc were matched to those calculated using the multibeam dynamical theory. This presents the possibility of determining foil thickness over a wide range, with an estimated experimental accuracy of ≈7% or less. In contrast to other convergent beam techniques, the present method, which uses weak beam conditions, can employ commonly-occurring low order reflections to extract thicknesses.

A simple equation based on the two beam approximation, is derived to determine foil thickness (to within ≈ 10%) without resorting to detailed image matching. This equation can be used for a rough estimate of foil thickness while carrying out TEM observations.     

Accurate measurement of grain boundary misorientation by Large Angle Convergent Beam Electron Diffraction

A new method using Large Angle Convergent Beam Electron Diffraction (LACBED) patterns is proposed to measure accurately the grain boundary misorientation. The LACBED patterns which are obtained with a defocused convergent electron beam having a convergence semi-angle in the range 1 to 5^o contain very sharp deficiency lines. Due to the good quality of the LACBED patterns, these sharp deficiency lines can be used to measure with great accuracy the grain boundary misorientation. In addition, since the LACBED method is a defocus mode method, the patterns contain at the same time information on the reciprocal space (the deficiency lines typical of the crystal orientation of the two grains on each side of the grain boundary) and on the real space (the image of the grain boundary). We describe a method which allows the identification of the misorientation from these LACBED patterns. The main point to consider is the accuracy which is about 0.05^o. It is much better than the one obtained from other conventional methods used to measure this misorientation.     

DESIGNING A DIFFRACTIVE OPTICAL ELEMENT FOR CONTROLLING THE BEAM PROFILE IN A THREE-DIMENSIONAL SPACE USING THE SIMULATED ANNEALING ALGORITHM

We have designed a spatially quantized diffractive optical element (DOE) for controlling the beam profile in a three-dimensional space with the help of the simulated annealing (SA) algorithm. In this paper, we investigate the annealing schedule and the neighbourhood which are the deterministic parameters of the process that warrant the quality of the SA algorithm. The algorithm is employed to solve the discrete stochastic optimization problem of the design of a DOE. The objective function which constrains the optimization is also studied. The computed results demonstrate that the procedure of the algorithm converges stably to an optimal solution close to the global optimum with an acceptable computing time. The results meet the design requirement well and are applicable.     

Surface segregation of aluminum atoms on Cu-9 at.% Al(1 1 1) studied by Auger electron spectroscopy and low energy electron diffraction

Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) were applied to investigate the segregation of aluminum atoms on a Cu-9 at.% Al(1 1 1) surface. We observed that the Al concentration in the top layer ranged between about 9 and 36 at.% after the sample we used was annealed at different temperatures. The phenomenon of Al atoms segregating on the surfaces was explained well by considering the diffusion length of Al atoms in bulk Cu. LEED measurements showed that R30° structures grew as the concentration of Al atoms increased. The segregation phenomena on surfaces resulted in a stable two-dimensional Cu₆₇Al₃₃ alloy phase in the top layer.     

反光电发射谱技术及其应用

本文介绍了反光电发射谱技术的基本原理，实验设备和实验方法，并详细综述了这种技术在表面科学，磁性材料，强关联复杂系统和高分子聚合材料等方面最新的研究进展。