Selective deposition of Au films on GaAs by projection-patterned excimer laser doping combined with electroless plating

Resistless microfabrication of Au thin films on n-type GaAs by projection-patterned laser doping using a KrF excimer laser and a 10% SiH₄-He gas is described. Gold thin films with a linewidth as narrow as 1.57 m are deposited selectively on the doped regions by electroless plating in a commercial Au-24s aqueous solution. The isotropic growth of the deposited films is discussed by comparing the linewidth of the deposited films with that of the doped regions. Furthermore, the dependence of the deposition characteristics of Au thin films on the laser irradiation conditions is investigated.Presented at LASERION '91, June 12–14, 1991, München (Germany)     

Excimer laser assisted selective epitaxy of GaP

An ArF excimer laser has been used to achieve homoepitaxy of GaP at 500° C using trimethylgallium and tertiarybutylphosphine as the precursor gases. Dependence of epitaxial growth on several parameters is examined. The crystalline properties of the films are determined using cross-sectional transmission electron microscopy. It is found that at 500° C, in the presence of laser radiation, higher growth rate and superior crystalline properties of GaP are achieved compared to purely thermal metalorganic vapor phase epitaxy under the same conditions. Electrical properties of p-n diodes fabricated via Zn doping have also been examined.     

Formation of periodic ring structures of relief and voids under laser vapor deposition of metallic films

The formation of periodic ring structures during laser-induced chemical vapor deposition of metals from metal carbonyl is observed experimentally and described by a theoretical model.     

Boron doping of silicon by excimer laser irradiation in a reactive atmosphere

UV excimer lasers have been used to dope semiconductors by a one-step process in which the laser serves both to melt a controlled thickness of a sample placed in dopant ambient and to photodissociate the dopant molecules themselves. Here we report the boron doping of silicon by means of an ArF (193 nm) excimer laser. Dopant atoms are obtained by photolysis of BCl₃ or pyrolysis of BF₃ molecules. The doping is performed both in gas ambient and using only an adsorbed layer. We have investigated the dependence of doping parameters such as laser pulse repetition and gas pressure on the subsequent boron impurity profiles and the dopant incorporation rate. These results indicate that the laser doping process is dopant-flux limited for BF₃ and externally rate limited for BCl₃.     

Chemical states of dodecanethiolate-passivated Au nanoparticles: synchrotron-radiation photoelectron spectroscopy

We have carried out a photoemission study using synchrotron radiation of dodecanethiolate (DT)-passivated Au nanoparticles supported on the highly oriented pyrolytic graphite substrates. From detailed line-shape analyses of Au 4f core-level photoemission spectra of DT-passivated Au nanoparticles, it was found that Au 4f core-level spectra consist of two components. We attribute these components to the inner Au atoms and surface Au atoms bonded to surface dodecanethiolates. From these results, we discuss the chemical states of the present DT-passivated Au nanoparticles.     

Field-emission flicker noise from potassium adsorbed on W(111) bounded and unbounded surface diffusion by spectral analysis

The spectral density functionsW(f) of the field-emission flicker noise of potassium adsorbed on the tungsten (111) region were determined. The analysis in terms of the Gesley-Swanson or the Timm and Van der Ziel model gives surface diffusion energies between 0.54 and 0.31 eV for (average) coverages from 0.15 to 0.38 and diffusion prefactors between 3×10^–1 and 10^–4 cm²/s. The fitting procedures are successful for both bounded and unbounded diffusion though in opposite order of temperature, as expected.On leave from Wrocaw University     

Efficient ablation of organic polymers polyether sulphone and polyether ether ketone by a TEA CO2 laser with high perforation ability

Organic polymer (PES: PolyEther Sulphone and PEEK: PolyEther Ether Ketone) ablation with oscillation-line selected TEA CO₂ lasers is successfully demonstrated. With different irradiation conditions the ablative etch-rate slopes were varied, which means that the ablation process is dependent on the ablation conditions such as incident laser intensity and ambient gas. In perforation processing of the PEEK film, the TEA CO₂ laser had a higher etch rate of 42 m/pulse at a fluence of 70 J/cm² in vacuum than the XeCl laser.     

High-resolution magnetic measurements at surfaces with spin polarized electrons

Observing the spin polarization of emitted electrons reveals surface magnetic information. In particular, high resolving power is achieved in different respects: 1) Magnetic micrography with a lateral resolution of 50 nm in a scanning electron microscope; 2) Non-destructive magnetic depth profiling in the 5–50 Å range with secondary electron emission; 3) Element specific chemical resolution using Auger electron emission; 4) Time-resolved magnetization measurements with pulsed-laser photoemission in less than 10 ns. The state-of-the-art of these techniques is illustrated with specific examples of surface magnetism.     

Lateral growth rates in laser CVD of microstructures

Lateral growth rates of Ni spots deposited on absorbing substrates by decomposition of Ni(CO)₄ with visible Kr⁺ laser light have been measured. The experimental data are consistent with the calculated temperature distributions. The mechanism of decomposition is thermal with an apparent chemical activation energy of 22±3 kcal/mole for the temperature range 350 KT500 K.     

The influence of the solubility limit on diffusion of as implants in silicon

Enhanced diffusion of implanted arsenic impurities in silicon during subsequent thermal annealing can be interpreted in terms of a system of reaction-diffusion equations. It is shown that for high doses the local solubility limit can considerably influence the reactions between the defects involved and thus markedly change the effective diffusion of As donors. A similar effect can be brought about by the presence of predoped donors/acceptors, which also can significantly accelerate/retard the effective diffusion of As implants. Furthermore, an explanation of some precipitation/clustering processes during a rapid/slow cooling-down is proposed. Finally, several contradictory experimental results published previously will be shown to be compatible with the present model.     

A gold-vapor laser using Ne-H2 as buffer gas

A small amount of hydrogen was added to neon buffer gas in a discharge-heated gold vapor laser. It was found that the output power and efficiency of the gold-vapor laser dramatically increased. The average output power and efficiency increased as much as 60%, when 0.5–1.0 Torr of hydrogen was added to neon. Maximum average power of 8 W was obtained using a plasma tube with 30 mm^00D8×100 cm active volume.     

Nd:YAG split-disk laser amplifier for 10 J output energy

A prototype split-disk amplifier consisted of four Nd:YAG ceramics and single crystals was demonstrated with a 3.7 cm square clear aperture. A single-pass small-signal gain of 2.0 and a total stored energy of 11.1 J in the eight YAG disks were obtained. The maximum output energy of 10.4 J with the YAG disk amplifier was achieved in a single-shot operation. A near-field pattern of 31 mm × 31 mm square with super Gaussian shape was measured.     

High-resolution nonlinear laser spectroscopy of exciton relaxation in GaAs quantum wells

This paper describes measurements of exciton relaxation in GaAs/AlGaAs quantum well structures based on high resolution nonlinear laser spectroscopy. The nonlinear optical measurements show that low energy excitons can be localized by monolayer disorder of the quantum well interface. We show that these excitons migrate between localization sites by phonon assisted migration, leading to spectral diffusion of the excitons. The frequency domain measurements give a direct measure of the quasi-equilibrium exciton spectral redistribution due to exciton energy relaxation, and the temperature dependence of the measured migration rates confirms recent theoretical predictions. The observed line shapes are interpreted based on solutions we obtain to modified Bloch equations which include the effects of spectral diffusion.     

Vision-based system for automatic stabilization of mode,beam steer,and output power of a high-power laser

As advancements in laser technology result in higher-power devices, increased thermal loads experienced by resonator optical components generate instabilities in the output beam. Consequently, methods for maintaining and optimizing output-beam parameters are necessary for efficient long-term operation. This study examines a vision-based feedback control system which monitors a sampled cross-sectional image of the laser's output, and regulates both cavity mirrors, as well as the excitation level, to stabilize beam uniformity, beam steer, and output-power level.The system optimizes the output-power distribution achievable from a given laser, while significantly reducing beam steering effects. Direction of beam propagation is restricted to within 60 rad of the desired setpoint, while the output power is stabilized to within 4%. Results clearly document a considerable improvement in laser performance through maximization of beam uniformity, minimization of beam steering, and stabilization of total output power. As such, an important degree of consistency and repeatability in output-beam parameters, essential to precision laser applications, is easily achieved. Valuable diagnostic capabilities pertaining to output beam intensity and energy profiles are also incorporated into the control system. These data may be monitored on-line or stored for subsequent analysis.     

The effects of experimental parameters in the thermal diffusivity measurements of oriented polymer films using mirage effect: Computer simulation

Computer simulations have been carried out to study the effects of the experimental parameters when the mirage method has been applied to thermal diffusivity measurements of oriented polymer films. The parameters under study are the thermal diffusivity of the fluid surrounding the sample, the modulation frequency and the radius of the heating beam, the height and the radius of the probe beam, and the sample thickness and thermal diffusivity. Proposals for the optimum parameter values to maximize the measurement sensitivity for the sample diffusivity are made and the difficulties arising from the low diffusivity of the samples are described. It is also concluded that because the thermal properties of the fluid surrounding the sample have a strong contribution to the mirage signals, the signals do not include any simple feature corresponding to the sample diffusivity. Therefore it should be determined from the entire measurement data using regression methods.     

Effects of interface on the dielectric properties of Ba0.6Sr0.4TiO3 thin film capacitors

Ba_0.6Sr_0.4TiO₃ thin films were deposited on Pt/SiO₂/Si substrate by radio frequency magnetron sputtering. High-resolution transmission electron microscopy (HRTEM) observation shows that there is a transition layer at BST/Pt interface, and the layer is about 7-8 nm thickness. It is found that the transition layer was diminished to about 2-3 nm thickness by reducing the initial RF sputtering power. X-ray photoelectron spectroscopy (XPS) depth profiles show that high Ti atomic concentration results in a thick interfacial transition layer. Moreover, the symmetry ν of ?_r-V curve of BST thin film is enhanced from 52.37 to 95.98%. Meanwhile, the tunability, difference of negative and positive remanent polarization (P_r), and that of coercive field (E_C) are remarkably improved.     

Direct writing of gold lines by laser-induced chemical vapor deposition

Stripes of gold metal were deposited by focussing an Ar⁺ laser (514nm) onto glass substrates in a heated vacuum cell containing the evaporator and the precursor. MeAuPMe₃, Me₃AuPR₃ (R = Me,Et) were used as precursors. Using MeAuPMe₃ or Me₃AuPEt₃, deposits of high quality were obtained above 40° C and 60° C evaporator temperature, respectively. With Me₃AuPMe₃ the same deposits of gold stripes were possible near room temperature. The stripes were characterized by scanning profilometry, electrical resistivity, SEM and SAM measurements. In general, the stripe resistivity was between 1.5 and 7 times of the bulk metal.     

Spin asymmetry and s-electron itinerancy in Co/X (X=Co,Cu, V and Ta) multilayers: their dependence on the electronegativity of non-magnetic layers

The electronic structure and magnetic properties of the Co at the Co/X (X=Co, Cu, V and Ta) interfaces have been studied by first-principle discrete variational method. We have found that the spin asymmetry and the s-electron itinerancy of the Co interface layer in the Co/X systems are strongly dependent on the electronegativity of the non-magnetic layers. A large difference in the electronegativity between the non-magnetic and Co layers is unfavorable both for s-electron itinerancy and for the spin exchange split of DOS at the Fermi level. Further study on charge density has revealed that a bond is formed across the Co/V and Co/Ta interfaces.     

Cavity-taper output nitrogen laser

The experimental realization of a wide-aperture laser with a direct optical fiber taper output has been demonstrated. The cavity and output field distributions have been studied experimentally. The various loss mechanisms associated with the tapered optical fiber output are discussed.     

Two unstable oscillations in the multimode laser with modulated inversion

We present comprehensive results of numerical studies on the dynamical properties of a multimode ring laser under modulation of the population inversion in the bad-cavity condition. Incoherent properties of unstable oscillations in this system are investigated in detail as a function of two control parameters: the dc component of the population inversion and the modulation amplitude. Two kinds of optical chaos in two limiting regions reported in a previous paper are extensively studied to clarify their different characteristics from deterministic and stochastic points of view. The competition between their different origins is revealed. Statistical properties of their stochasticity are investigated to clarify their non-Gaussian natures. Comparison with analytical results for a single-mode laser with fluctuations is also made.