Design of 1480-nm diode-pumped Er3+-doped integrated optical amplifiers

Abstact Erbium-doped Y₂O₃ integrated optical amplifiers are designed for low-threshold operation and 3 dB amplification. The most important design parameter for minimal threshold, the erbium concentration, is found to have an optimum value of 0.35 at% for a given waveguide structure with 1.0 dB cm^-1 background loss. The corresponding threshold power is 7 mW. The pump power to obtain 3 dB gain is found to be 22 mW for an amplifier with an optimum erbium concentration of 0.6 at% and 2.8 cm length. At 30 mW pump power the maximum gain is shown to be 5 dB.Designing is done using a comprehensive numerical model of an erbium-doped integrated optical amplifier. In the model two-dimensional intensity-dependent overlap integrals are used, which allow arbitrary erbium dopant profiles and waveguide crosssections. Concentration-dependent effects such as quenching and upconversion are also included in the model.Input parameters for the model are determined from measurements on an unoptimized Er: Y₂O₃ optical waveguide amplifier. Amplification simulations and gain measurements of the unoptimized waveguides are found to be in close agreement, providing a sound basis for the design calculations.     

Numerical analysis of amplification characteristic of erbium-doped waveguide amplifiers by FD-BPM

An efficient analysis method for erbium-doped optical waveguide amplifiers (EDWA) is presented. By solving the rate equation, the propagation in EDWA is stimulated using the finite difference beam propagation method (FD-BPM). The dependence of the gain of EDWA is investigated on the waveguide length, erbium concentration, and signal and pump power. The analysis shows that considerable gain levels, 3.35 dB/cm can be achieved in 10 cm-long EDWA with an erbium concentration of 2.0 × 10²⁶ ions/m³, signal power 1 W and pump power 100 mW at 980 nm.     

A numerical analysis of gain characteristics of Er-doped Al2O3 waveguide amplifiers

The gain characteristics of erbium-doped Al₂O₃ waveguide amplifiers are investigated by solving numerically rate equations with upconversion effects and propagation equations. We obtained the dependence of gain of erbium-doped Al₂O₃ waveguide amplifiers on the waveguide length, erbium concentration and pump power at different pumping wavelengths (980 and 1480 nm). The performance of amplifiers pumping at 1480 and 980 nm are compared. It is shown that 980 nm pumping has higher gain and higher pumping efficiency. The parameters of waveguide amplifiers have been optimized. A optical gain of 43 dB can be achieved for a optimum waveguide length of 8.25 cm and 5.8 × 10²⁰ cm^–3 Er concentration pumped with 100 mW at 980 nm, that is a gain of 5.2 dB/cm.     

高浓度镱铒共掺磷酸盐光纤放大器增益特性

在忽略高能级的自发辐射和光纤损耗的情况下，利用速率方程和传输方程理论研究了高浓度Er³⁺/Yb³⁺共掺磷酸盐玻璃光纤放大器的增益特性，讨论了Er³⁺浓度、Yb³⁺浓度、抽运光功率、信号光功率、光纤长度对放大器增益的影响，并与单掺铒光纤放大器进行了比较.由于Yb³⁺的敏化作用降低了铒离子的团簇效应，减少了离子间相互作用，共掺光纤的增益和效率明显高于单掺光纤.数值计算表明，3.2cm长Er³⁺/Yb³⁺共掺光纤在980nm的20dBm(100mW)抽运功率下，1532nm处的增益可达10dB. 关键词： 镱铒共掺光纤放大器 速率方程 传输方程 高浓度     

掺铒磷酸盐玻璃波导放大器的特性研究

研究了掺铒磷酸盐玻璃波导放大器的特性。利用重叠因子将980nm光抽运的掺铒玻璃波导放大器四能级模型的速率-传输方程进行化简,在考虑上转换效应和放大自发发射的情况下．利用数值模拟的方法,得到了掺铒玻璃波导放大器的增益与Er^3 离子浓度、抽运功率、波导长度等参量之间的关系曲线;同时模拟出放大自发发射曲线并与实验测量结果进行比较。结果表明在考虑上转换效应和放大自发发射的情况下,理论结果和实验测量结果是一致的。同时看到,选择合适的铒离子浓度是制作掺铒玻璃波导放大器的关键;并且为了全面发挥掺铒玻璃波导放大器的性能,需要抽运功率、波导长度等各个参量配合起来。     

High index contrast Er:Ta2O5 waveguide amplifier on oxidised silicon

We report a high index contrast erbium doped tantalum pentoxide waveguide amplifier. 2.3 cm long waveguides with erbium concentration of 2.7 × 10²⁰ cm^? 3 were fabricated by magnetron sputtering of Er-doped tantalum pentoxide on oxidised silicon substrates and Ar-ion milling with photolithographically defined mask. A net on-chip optical gain of ~ 2.25 dB/cm at 1531.5 nm was achieved with 20 mW of pump power at 977 nm launched into the waveguide. The pump threshold for transparency was 4.5 mW.     

A numerical method for solving gain characteristics of Er/Yb codoped waveguide amplifiers

By means of the interpolation and iteration methods to deal with the rate equations and the light propagation equations for the Er³⁺/Yb³⁺ codoped waveguide amplifier (EYCDWA), the gain characteristics in the forward, backward, and bidirectional pumped styles are analyzed. In order to obtain high gain, some parameters such as waveguide length, dopant concentration, pump power, and signal power are optimized. The results show that the pump power and signal power are about 50 mW and 1 mW, respectively, the gain is about 6.5 dB for the 2.0 cm-long EYCDWA with an Er³⁺ ion concentration of 1.5 × 10²⁶ m^–3 and Yb³⁺ ion concentration of 1.9 × 10²⁷ m^–3. Moreover, the upconversion is investigated for the designed device.     

油酸修饰的LaF_3:Er,Yb纳米颗粒的光学特性及有机-无机复合型光波导放大器

采用微乳液法制备了LaF3:Er,Yb纳米颗粒,在有机-无机杂化材料中有良好的溶解性,掺杂质量比可达到50%。通过TEM观察到纳米颗粒的粒径为6~10 nm;XRD的测试结果表明材料中形成了LaF3六方晶体结构;荧光发射谱的测试表明纳米颗粒的荧光半峰全宽为79 nm;通过时间相关单光子计数法测得铒离子4I13/2能级的寿命为100μs。结合半导体工艺,制备了嵌入条形结构的平面光波导放大器,在信号光(1 550nm)功率为0.2 mW,泵浦光(980 nm)功率为188 mW的条件下,在1.9 cm的样品上得到了3.2 dB的相对增益;同时分析了散射损耗随颗粒大小的变化关系。     

Analysis for amplifying characteristics of Er-Yb-co-doped microring resonators

Formulas of the transfer functions and the output power gains are presented, amplifying characteristics are analyzed, and simulation is performed for an Er³⁺-Yb³⁺-co-doped microring resonator. Under the pump wavelength of 980 nm and the central signal wavelength of 1550 nm, the dependence of the output power gain on the amplitude coupling ratio, pump power, signal power, and the dopant concentration is investigated, the output spectra are presented, and the optimization of the device is carried out. Simulated results show that the output power gain of this device is much larger than that of the Er³⁺-Yb³⁺-co-doped straight waveguide amplifier (EYCDWA) with the same waveguide parameters.     

Double-pass erbium-doped zirconia fiber amplifier for wide-band and flat-gain operations

The double-pass erbium-doped zirconia fiber amplifier (EDZFA) is proposed and demonstrated to provide a wide-band amplification as well as flat-gain operation in both the C- and L-band regions using only a single-gain medium. The proposed amplifier utilizes an erbium-doped zirconia fiber (EDZF) with erbium ion concentration of 2800 ppm as a gain medium. The medium is fabricated in a ternary glass host, zirconia-yttria-aluminum codoped silica fiber through solution doping technique along with modified chemical vapor deposition (MCVD). Compared to a single-pass operation, the double-pass EDZFA shows a better gain performance. At input signal power of 0 dBm and the optimum EDZF length of 2 m, a flat gain of around 16 dB is achieved by the proposed double-pass amplifier with gain variation of approximately 2.5 dB throughout the wavelength range from 1530 to 1590 nm. However, the noise figure of the double-pass amplifier is slightly higher than that of the single-pass due to inefficient population inversion at the input part of the amplifier.     

掺Er及Yb-Er共掺Al2O3光波导放大器的理论与实验研究

抽运波长为0.98μm时,考虑合作上转换、交叉弛豫、激发态吸收等上转换机理给出了掺Er及Yb-Er共掺系统的速率方程,并利用二维波导的有限元理论及包含正反向放大的自发辐射的场传输方程,建立了一套分析光波导放大器增益特性的综合理论模型。得到掺Er及Yb-Er共掺Al2O3光波导放大器增益与波导长度、抽运功率、掺杂浓度等多个参量的关系,绘制出具有实用性的优化设计曲线。将该理论模型应用于实际制作的Yb-Er共掺Al2O3光波导放大器,结果与实验数据相符。     

The optimal thickness of transmission-mode GaN photocathode

A 150-nm-thick GaN photocathode with an Mg doping concentration of 1.6× 10¹⁷cm^-3 is activated by Cs/O in ultrahigh vacuum chamber, and quantum efficiency (QE) curve of negative electron affinity transmission-mode (t-mode) GaN photocathode is obtained. The maximum QE reaches 13.0% at 290 nm. According to the t-mode QE equation solved from the diffusion equation, the QE curve is fitted. From the fitting results, the electron escape probability is 0.32, the back-interface recombination velocity is 5× 10⁴ cm·s^-1, and the electron diffusion length is 116 nm. Based on these parameters, the influence of GaN thickness on t-mode QE is simulated. The simulation shows that the optimal thickness of GaN is 90 nm, which is better than the 150-nm GaN.     

Cathodoluminescent and nonlinear optical properties of undoped and erbium doped nanostructured ZnO films deposited by spray pyrolysis

We have deposited zinc oxide (ZnO) and erbium doped zinc oxide (ZnO:Er) thin films on heated glass substrates using spray pyrolysis technique. The effect of erbium dopant on structural, morphological, luminescent and nonlinear optical properties was studied. The deposited films have been analyzed using X-ray diffraction (XRD), scanning electron microscopy (SEM), ex situ compositional analysis (ESCA), profilometry, cathodoluminescence (CL) and third harmonic generation (THG) measurements. All films were polycrystalline, having a preferential growth orientation along the ZnO (0 0 2) plane, with a corresponding average crystallite size of less than 41 nm. Addition of erbium can effectively control the film surface morphology and its cathodoluminescent properties. The films containing low erbium concentration show a uniform surface covered with hexagonal shaped grains and a strong UV light emission intensity as well as TH response. In contrast, when the erbium doping ratio exceeds 3%, a porous surface with columnar textural growth becomes more pronounced, and a substantial reduction of the cathodoluminescent and TH response. A strong TH signal was obtained for the film with good crystalline quality at the concentration of 2%. Third order nonlinear optical susceptibility (χ^〈3〉) values of the studied materials were in the remarkable range of 10⁻¹² esu.     

Characterization of Er-doped fluoride glass ceramics waveguides containing LaF3 nanocrystals

Highly Er³⁺-doped fluoride glass ceramics planar waveguides containing LaF₃ nanocrystals have been fabricated by physical vapor deposition (PVD). The solubility of Er³⁺ in the segregated nanocrystals can reach 30 mol% which is much larger than the value found in LaF₃-oxide glass ceramics. A quantitative analysis of the photoluminescence of the 1.54 μm emission band of Er³⁺ ions has demonstrated that erbium ions are partitioned in both crystals and vitreous phase. The short lifetime (2.2 ms) measured for erbium incorporated in LaF₃ crystal lattice is a consequence of concentration quenching while the lifetime is close to 10 ms in the glassy phase. The emission bandwidth has been found to be greater than that of the precursor glass (71 nm at the half-height width). The high Er³⁺ concentration and spectral width could make this nanostructured fluoride material suitable for planar amplifier in the C telecommunication band.     

Broadband photoluminescence from pulsed laser deposited Er2O3 films

Photoluminescence (PL) with the bandwidth of 45 nm (1523-1568 nm at the level of 3 dB) was observed in amorphous Er₂O₃ films grown on to the quartz substrate by pulsed laser ablation of erbium oxide stoichiometric target. Optical transmission spectrum has been fitted to Swanepoel formula to determine the dispersion of refractive index and to extract resonance absorption peaks at 980 and 1535 nm. The maximum gain coefficient of 800 dB/cm at 1535 nm was estimated using McCumber theory and experimental spectrum of the resonance absorption. In 5.7 mm-long waveguide amplifier a theory predicts the spectral gain of 20 dB with 1.4 dB peak-to-peak flatness in the bandwidth of 31 nm (1532-1563 nm) when 73% of Er³⁺ ions are excited from the ground state to the ⁴I_13/2 laser level. Strong broadband PL at room temperature and inherently flat spectral gain promise Er₂O₃ films for ultra-short high-gain optical waveguide amplifiers and integrated light circuits.     

Modeling of graded index waveguide fabricated by ion exchange on Er3+ doped glass

A general numerical tool,based on thermal diffusion equation and full-vectorial eigen-mode equation,has been presented for the systematic analysis of graded index channel waveguide fabricated by ion exchange on Er3+ doped glass.Finite difference method with full-vectorial formulation(FV-FDM) is applied to solving the full-vectorial modes of graded index channel waveguide for the first time.The coupled difference equations based on magnetic fields in FV-FDM are derived from the Taylor series expansion and accurate formulation of boundary conditions.Hybrid nature of vectorial guided modes for both pump(980 nm) and signal light(1550 nm) are demonstrated by the simulation.Results show that the fabrication parameters of ion exchange,such as channel opening width and time ratio of second step to first step in ion exchange,have large influence on the properties of waveguide.By optimizing the fabrication parameters,maintenance of monomode for signal light and improvement of the gain dynamics can be achieved in Er3+ doped waveguide amplifier(EDWA) fabricated by ion exchange technique.This theoretical model is significant for the design and fabrication of EDWA with ion exchange technique.Furthermore,a single polarization EDWA,which operates at wavelength from 1528 nm to 1541 nm for HE polarization,is numerically designed.     

A Flat-Gain Double-Pass Amplifier with New Hafnia-Bismuth-Erbium Codoped Fiber

An efficient and compact double-pass optical fiber amplifier is demonstrated using a newly developed hafnia bismuth erbium co-doped fiber(HBEDF) as a gain medium. The HBEDF is fabricated using a modified chemical vapor deposition in conjunction with solution doping. The fiber has an erbium ion concentration of 12500 ppm.At the optimum length of 0.5 m, the HBEDF amplifier(HBEDFA) achieves a flat gain of 26 d B with a gain variation of less than 1.5 d B within a wavelength region from 1530 to 1560 nm when the input signal and pump power are fixed at-30 d Bm and 140 m W, respectively. On the other hand, at the input signal power of-10 d Bm,the HBEDFA also achieves a flat gain of 14.2 d B with a gain variation of less than 2.5 d B within a wide wavelength region from 1525 to 1570 nm. Compared with the conventional zirconia erbium co-doped fiber based amplifier,the proposed HBEDFA obtains a more efficient gain and lower noise figure. For an input signal of-30 d Bm, the gain improvements of 6.2 d B and 4.8 d B are obtained at 1525 nm and 1540 nm, respectively.     

Core-shell LaF<Subscript>3</Subscript>:Er,Yb nanocrystal doped sol–gel materials as waveguide amplifiers

The oleic acid (OA)-modified LaF₃:Er,Yb and LaF₃:Er,Yb–LaF₃ core-shell nanocrystals are synthesized. The lifetime values could be further improved by incorporating core-shell nanocrystals. A kind of sol–gel derived organic–inorganic hybrid material (SGHM) allows for 50 wt.% or even more of both the two nanocrystals in the matrix, and we give the explanation from scattering analysis. It’s precisely because we use the erbium nanocrystals rather than erbium organic complexes, and avoid the undesirable luminescence quenching by Er–Er clustering with a high Er³⁺ concentration. LaF₃:Er,Yb–LaF₃/SGHM transparent films and optical waveguides are also fabricated. The nanocomposite films show strong 1550 nm luminescence intensity under the excitation of 980 nm after heat treatment below 150 °C and the full-width-at-half-maximum is about 51 nm. The loss and optical gain of the waveguide are measured. A relative gain of about 3.5 dB is measured at 1550 nm in a 1.7 cm long waveguide.     

Optimization of core size in erbium doped holey fiber amplifiers

Holey fibers (HFs) can be used as amplifier in optical communication systems. These new fiber structures have flexibility to change the fiber parameters such as refractive index of guided mode, air filling factor (AFF), V number, group velocity dispersion (GVD) and numerical aperture, only by the change of the hole size and air-hole spacing. In this paper we will use improved fully vectorial effective index method (IFEIM) to analyze the erbium doped holey fiber amplifier (EDHFA) with hexagonal unit cell. The range that core size can change in any air-hole spacing will determine and the growth of core size in the amplifier character such as maximum gain and optimum length will study. By determination of single mode region the effect of pump power and dopant concentration growth, on the amplifier parameter will define.     

双向掺铒光纤放大器的特性分析

讨论了双向掺铒光纤放大器的结构方案,利用考虑放大的自发辐和北员耗影响的双向掺铒光纤放大器稳态放大速率方程模型分析的增益与掺铒光纤长度、输入信号光功率、帛运光功率及抽运方式等参数之间的关系,研究了单向和双向等功率抽运下正反向噪声系数随正反向信号光输入功率的变化行为。