Charge relaxation in conducting dielectric films with shallow and deep traps

A nonsteady-state boundary-value problem of the relaxation of a charge injected into a dielectric film is solved analytically with allowance for the film conductivity and capture of charge carriers by traps having a finite emptying rate. The one-and two-zone modes of charge relaxation are considered. The obtained general expressions reduce to earlier published formulas derived in particular cases. Numerical calculations and an analysis of the experimental data available in the literature on the electret state of oxide films deposited on metal substrates confirm the applicability of the proposed model of dielectric relaxation.     

Effect of tunneling on dielectric relaxation

An analytic solution is derived for the kinetic equation of dielectric relaxation taking into account tunneling in a quasiclassical approximation for a symmetric two-well model. Analysis of the general formula for the relaxation time in the limit cases of high and low temperatures shows it to be consistent with earlier approximate solutions and allows determining more precisely the region of non-Arrhenius relaxation.Translated from Izvestiya Vysshikh Uchebynkh Zavedenii, Fizika, No. 2, pp. 36–41, February, 1987.     

On the charge profiles in thin dielectric films

The relation between the charge profile and potential barrier height-voltage characteristics of metal/insulator/metal (MIM) structures is derived. The possibility of determining the charge profile using internal photoemission measurements and the derived relation is discussed.     

Effect of uniaxial compression on traps of excitons and charge carriers in poly(9-vinylcarbazole) films

The effect of uniaxial pressure (1 × 10⁸ Pa) on the photoluminescence spectra and thermally stimulated luminescence curves of poly(9-vinylcarbazole) has been investigated in the temperature range of 5–295 K. The thermally stimulated luminescence curve of crystalline carbazole has been measured for comparison. The high-temperature wings of the thermally stimulated luminescence curves are approximated by a Gaussian function, the half-width of which characterizes the disorder of energy states of deep structural traps. It is concluded that the pressure inhibits conformational changes of polymer chains of poly(9-vinylcarbazole), which leads to the formation of sandwich-like excimers as well as to an ordering of the spatial arrangement of the side carbazolyl groups. As a result, the concentration of “excimer-forming” centers increases, whereas the degree of disorder of energy states of deep structural traps of charge carriers is reduced by almost half and remains unchanged after the depressurization.     

Effect of electrode surface topology on charge injection characteristics in dielectric liquids: An experimental study

Micro/nano scale features are incorporated on an electrode surface to study its effect on the charge injection characteristics in HFE7100. These features are generated on a smooth surface by chemical etching of the electrodes or through electrophoretic deposition of single walled carbon nanotubes (SWCNT). The threshold voltage for charge injection was reduced by a factor of 5 and 2 for the SWCNT and etched electrodes respectively, when compared to the smooth electrode configuration. The presence of sharp features on the surface with high aspect ratio had a more dominant effect on enhancing the charge injection than the roughness.     

Effect of interface traps on Debye thickness semiconductor films

The presence of the boundary interface trapping states and their role in determining the properties of Debye thickness thin semiconductor films, are demonstrated experimentally, using PbTe films deposited on mica. These charged states could not be observed earlier and be studied directly, because of the screening by the relatively high carrier density of the ordinary PbTe. Thin, Debye length thickness, PbTe films with a high concentration of interface trapping centers, possess an extraordinary high resistance. In this case the thermostimulated capacitor discharge method can be successfully applied to determine the energy of these levels, their carrier capture cross-sections and their donor- or acceptor-like character. The experimental results and theoretical calculations are discussed.     

Water-related charge carrier traps in thermal silicon dioxide films prepared in dry oxygen

The parameters of electron and hole traps in thermal silicon dioxide films prepared in dry oxygen have been investigated using avalanche injection of electrons and holes from silicon in combination with measurements of capacitance-voltage and current-voltage characteristics of photoinjection of electrons from junctions with variations in the conditions of oxidation, annealing, and storage of Si-SiO₂ structures. The model concepts proposed by the author for water-related charge carrier traps in such films have been confirmed. It has been found that the transport characteristics of the traps depend on the time of contact between Si-SiO₂ structures and atmospheric air of natural humidity. The results obtained can be used for the suppression of degradation processes in devices based on Si-SiO₂ structures, in the design of electroluminescent instruments based on Si-SiO₂ structures, and in the study of the transport characteristics of some molecules (for example, water), atoms, and ions in pores (structural channels) whose sizes are comparable to the sizes of water molecules.     

Glass transitions and dynamics in thin polymer films: dielectric relaxation of thin films of polystyrene

The glass transition temperature T(g) and the temperature T(alpha) corresponding to the peak in the dielectric loss due to the alpha process have been simultaneously determined as functions of film thickness d through dielectric measurements for polystyrene thin films supported on glass substrate. The dielectric loss peaks have also been investigated as functions of frequency for a given temperature. A decrease in T(g) was observed with decreasing film thickness, while T(alpha) was found to remain almost constant for d>d(c) and to decrease drastically with decreasing d for d相似文献   

Effects of corotron size and parameters on the dielectric substrate surface charge

Effects of variation of parameters of a corona device (corotron) used in electro-photographic machines on the amount of surface charge build-up on the surface of dielectric substrate were studied. Particular attention was given to the effect of corotron dimension including wire–shields and wire–plate distances, substrate thickness, shields insulation and the substrate speed on the amount of substrate surface charge. The computational analyses were performed for a two-dimensional cross-section of the corotron under steady-state condition. The Maxwell equations were solved and the electrical quantities in a rectangular positive single wire corotron were evaluated. The simulation results showed that for a fixed wire voltage, the corotron size, the substrate thickness, insulation of shields and the substrate speed will affect the distributions of electrical quantities in the corotron. The wire–substrate distance and the substrate speed, however, were found to be the main parameters that control the amount of surface charge build-up on the substrate.     

Conductivity and dielectric relaxation of gelatin films with glycerol as plasticizer

Gelatin films complexed with ionic salts are of current interest as potential solid polymer electrolytes. However, even without salt, gelatin films are found to have quite high ionic conductivity at room temperature (around 30 °C), when plasticized with an adequate fraction of glycerol. In the present work, the admittance and dielectric properties of gelatin are studied as a function of glycerol content and temperature. An enhancement in the ionic conductivity by four orders of magnitude to ～9.13?×?10^?3 S/m at room temperature is obtained by adding 35.71 wt% of glycerol. This enhancement appears to be correlated with the changes in the local microstructure on plasticizer addition. Admittance and dielectric relaxation have been studied to understand the dynamics of the charge carriers. Differential scanning calorimetry, X-ray diffraction and scanning electron microscopy are also done.     

A. C. behaviour and dielectric relaxation in indium oxide films

Vacuum deposited blackish indium oxide films (In-O) as well as the oxidised films (In₂O₃) were studied for their a.c. behaviour at different temperatures and at various film thicknesses in the audio frequency region. ε of In-O films was thickness dependent and also showed dielectric relaxation at lower frequencies due to the dipolar orientation arising from their non-stoichiometric nature. However at liquid nitrogen temperature region ε was thickness independent similar to the oxidised films which neither showed any relaxation effect nor any thickness dependent ε. The results have been discussed from the classical theory of dielectric polarisation.     

Individual charge traps in silicon nanowires

We study anomalies in the Coulomb blockade spectrum of a quantum dot formed in a silicon nanowire. These anomalies are attributed to electrostatic interaction with charge traps in the device. A simple model reproduces these anomalies accurately and we show how the capacitance matrices of the traps can be obtained from the shape of the anomalies. From these capacitance matrices we deduce that the traps are located near or inside the wire. Based on the occurrence of the anomalies in wires with different doping levels we infer that most of the traps are arsenic dopant states. In some cases the anomalies are accompanied by a random telegraph signal which allows time resolved monitoring of the occupation of the trap. The spin of the trap states is determined via the Zeeman shift.     

Surface charge measurement in surface dielectric barrier discharge by laser polarimetry

Measurements of surface charge in a surface dielectric barrier discharge driven in atmospheric air were successfully demonstrated by a laser polarimetry. AC voltage at a frequency of 2 kHz generated the discharge between an exposed electrode and the dielectric barrier over a buried electrode. Although the discharge behaviors varied depending on the polarity of the exposed electrode, there were no differences in the tendency and amplitude of the surface charge accumulation except the polarity. With higher applied voltage, the amount of surface charge became larger and the charge was distributed farther from the exposed electrode.     

Effect of electron-electron interaction on spin relaxation of charge carriers in semiconductors

An analysis of spin dynamics is presented for semiconductor systems without inversion symmetry that exhibit spin splitting. It is shown that electron-electron interaction reduces the rate of the Dyakonov-Perel (precession) mechanism of spin relaxation both via spin mixing in the momentum space and via the Hartree-Fock exchange interaction in spin-polarized electron gas. The change in the Hartree-Fock contribution with increasing nonequilibrium spin polarization is analyzed. Theoretical predictions are compared with experimental results on spin dynamics in GaAs/AlGaAs-based quantum-well structures. The effect of electron-electron collisions is examined not only for two-dimensional electron gas in a quantum well, but also for electron gas in a bulk semiconductor and a quantum wire.     

Gorsky relaxation in the presence of traps

It has been shown recently that a linear response theoretic formalism leads to a straightforward derivation of the theory of the Gorsky effect at low interstitial concentrations, for arbitrary specimen geometry and applied stress inhomogeneity. We now extend this formalism to the practically important situation in which traps (e.g., N interstitials) inhibit the diffusion of the H interstitials, in order to motivate the experimental application of the Gorsky relaxation technique to the determination of the trap parameters. An explicit calculation is done for a typical specimen geometry, using Schroeder's phenomenological model for diffusion in the presence of traps. Exact expressions are obtained for the anelastic creep function, the relaxation strength and the internal friction. The structure and physical implications of these expressions are discussed using numerical values for the parameters deduced by other methods (in particular, neutron scattering). Noteworthy features of the predicted dynamic response include shifts in the position and height of the Gorsky peak owing to the occurrence of an effective diffusion constant and the difference in the values of the trace of the elastic dipole tensor in the free and trapped states; and an additional Snoek-like contribution due to local free trapped transitions of the diffusing particles.     

Dielectric barrier discharge in needle-to-plane configuration: Model of surface charge relaxation

Relaxation process of surface charge owing to dielectric barrier discharge (DBD) in “needle – air gap – polyethylene terephthalate film – plane” configuration is considered. Experimental data of the surface charge relaxation (SCR) are obtained by means of the rotating capacitive probe. Taking into account Gaussian radial distribution of accumulated charge density, effective surface and volume electrical conductivities of a barrier dielectric, phenomenological model of SCR for any dielectric thickness is proposed and exact solutions are obtained. The adequacy of the model is confirmed by the numerical computation. There is a good agreement between the experimental results and the model calculations.     

Electrical properties and dielectric relaxation of thermally evaporated zinc phthalocyanine thin films

The electrical transport properties and dielectric relaxation of Au/zinc phthalocyanine, ZnPC/Au devices have been investigated. The DC thermal activation energy at temperature region 400-500 K is 0.78 eV. The dominant conduction mechanisms in the device are ohmic conduction below 1 V and space charge limited conduction dominated by exponential trap distribution in potentials >1 V. Some parameters, such as concentration of thermally generated holes in valence band, the trap concentration per unit energy range at the valence band edge, the total concentration of traps and the temperature parameter characterizing the exponential trap distribution and their relation with temperatures have been determined. The AC electrical conductivity, σ_ac, as a function of temperature and frequency has been investigated. It showed a frequency and temperature dependence of AC conductivity for films in the temperature range 300-400 K. The films conductivity in the temperature range 400-435 K increased with increasing temperature and it shows no response for frequency change. The dominant conduction mechanism is the correlated barrier hopping. The temperature and frequency dependence of real and imaginary dielectric constants and loss tangent were investigated.