Combinatorial fabrication and magnetic properties of homoepitaxial Co and Li co-doped NiO thin-film nanostructures

Magnetic properties of nanostructured epitaxial thin layers of a series of Co and Li co-doped NiO on MgO(1 0 0) substrate with NiO buffer layer have been investigated. Thin films were synthesized by combinatorial laser molecular beam epitaxy (CLMBE) in the continuous binary composition spread approach. Large and linear variation of x was achieved in the growth of Co_xLi_0.2Ni_0.8−xO_, onto 9 mm of single substrate. Homoepitaxial growth with smooth surface morphology was confirmed by grazing incidence X-ray diffraction (GIXRD) and atomic force microscopy (AFM). Linear decrease in the band gap and optical transparency was observed with increasing cobalt concentration. The magneto-optical Kerr effect revealed a strong photon energy dependency with negative Kerr rotation for all the Co-concentrations in the film, suggesting intra-valence charge transfer (IVCT) between low spin state Co²⁺ with host Ni²⁺. Ferromagnetic (FM)-like ordering was observed at low temperatures, while antiferromagnetism predominates at room temperature in the Co and Li co-doped nickel oxide epitaxial films.     

Influence of Fe doping on the structural,optical and magnetic properties of ZnS diluted magnetic semiconductor

Fe doped ZnS nanoparticles with different concentrations of Fe, synthesized by microwave assisted co-precipitation method have been reported. The incorporation of Fe²⁺ and Fe³⁺ ions into ZnS lattice are confirmed by X-ray diffraction (XRD) and Electron Paramagnetic resonance (EPR) study. XRD and High Resolution Transmission electron Microscope (HRTEM) results confirm the phase purity of the samples and indicate a reduction of the particle size with increase in Fe concentration. EDAX analysis confirms the presence of Zn, S and Fe in the samples. A yellow–orange emission peak is observed in Photoluminescence (PL) spectra which exhibits the Characteristic ⁴T₂ (4G)–⁶A₁ (6S) transition of Fe³⁺ ion. The room temperature magnetic studies as analyzed from M–H curves were investigated from vibrating samples magnetometer (VSM) which shows a weak ferro and superparamagnetic like behavior in 1% and 3% Fe-doped ZnS nanocrystals, whereas; at 10% Fe-doping concentrations, antiferromagnetism behavior is achieved. The ZFC-FC measurement reveals that the blocking temperature of the nanoparticle is above the room temperature.     

Structural and magnetic studies on Zr doped ZnO diluted magnetic semiconductor

In this study, Zirconium doped Zn_1−xZr_xO (with x = 0.00–0.10) samples have been prepared by formal solid-state reaction technique. The Zr doped ZnO samples annealed at 1100 °C and characterized by different characterization techniques, such as X-ray diffraction (XRD), Scanning electron microscope (SEM), Vibrating sample magnetometer (VSM) and Fourier transform infrared spectroscopy (FTIR). The X-ray diffraction (XRD) used to study the structural properties. XRD pattern showed that lattice parameters, “a”, “c”, unit cell volume and Zn–O bond length increase with doping content (x ≤ 0.04) where as these decrease with x > 0.04. On the other hand, reverse trend observed with lattice distortion. The crystallite size decreases with increasing doping content of Zr. FTIR employed to investigate functional chemical bonding properties of different elements and compounds present in materials. The low, medium and high frequency absorption bands observed at 630, 1500 and 3435 cm⁻¹, which were the common features of Zn–O, H–O–H and O–H bond respectively. SEM used to study surface morphology and measured grain size of specimen. The surface becomes dense and grain size decreases with increasing degree of Zr contents. The SEM micrograph also shows the presence of spherical micro size particles and formation of pores in samples. Magnetic properties were obtained using VSM. The samples exhibit room temperature ferromagnetism. The magnetic hysteresis loops show variation in the value of magnetic parameter. The saturation magnetization (M_s) and coercivity (H_c) decrease, while remanence magnetization (M_r) shows gradually increasing trend with Zr content. VSM measurement reveals that sample Zn_0.96Zr_0.4O show better result as compared to x = 0.06–0.10.     

Mn掺杂SiC磁性薄膜的结构表征

利用反射式高能电子衍射(RHEED)、X射线衍射(XRD)和X射线吸收近边结构谱(XANES)等技术研究了在950 ℃条件下Si(111)衬底上共蒸发分子束外延方法制备的Mn掺杂SiC磁性薄膜的结构特征.RHEED结果表明,生长的Mn掺杂SiC薄膜为立方结构.XRD和XANES结果表明,在Mn掺杂量为0.5％和18%的样品中,Mn原子均是与SiC半导体介质中的Si原子反应生成镶嵌在SiC基体中的Mn₄Si₇化合物颗粒,并未观察到在SiC晶格中有替代式或间隙式的M     

Structural and magnetic properties of BiFe_(1-x)Cr_xO_3 synthesized samples

Chromium doping effects on the structure and the magnetic properties of bismuth ferrite BiFe1-xCrxO3 （x = 0-0.3） （BFCxO） polycrystalline samples are examined. The Perovskite-type oxide samples are synthesized by the conventional solid state reaction at a high pressure of 7 GPa and a temperature of 1273 K. The X-ray powder diffraction patterns at room temperature show that all the samples with x = 0.0-0.3 are described by the rhombohedral structure. In the meantime, it is revealed that the doping of Cr can induce noticeable lattice distortions in the doping samples, and the largest distortion is observed in the case x = 0.1. The magnetic hysteresis loops measured at room temperature exhibit week ferromagnetic behaviors of the samples and the magnetization is found to increase with the increase in Cr concentration. The temperature- dependent magnetization curves indicate antiferromagnetic features in samples. Moreover, Cr-doping tends to reduce the ordering temperature.     

Effect of cobalt substitution on microstructure and magnetic properties in ZnO nanoparticles

Ferromagentic semiconductors have been actively pursued because of their potential as spin polarized carrier sources and easy integration into semiconductor technology. One such material, ZnO has been shown to be a potential Diluted Magnetic Semiconductor (DMS). The appearance of ferromagnetism, however, is found to be sensitive to the processing conditions. We report synthesis of ZnO nanoparticles of size ∼20 nm by a simple co-precipitation technique using metal nitrates and NaOH as precipitant. The particles are self-organised and reveal single crystalline behaviour in electron diffraction pattern. Incorporation of Co in ZnO matrix leads not only to the reduction in crystallite size but also to the modification of the structure. At 5% Co, the particles are highly textured. The particles also aggregate and the aggregated mass have nearly rectangular shape as seen through TEM. Increasing Co to 10%, results into further reduction of particle size and the particles self organize in a line, which looks like nanofibers. This alignment of particles increases by increasing the Co content further. This type of growth of nanofibers above Co ≥ 10% is well correlated with the anisotropic peak broadening observed in the XRD spectra. In addition, Co substitute Zn site up to 20% without showing any extra phase in XRD spectra as compared to 7 to 10% in case of bulk. Transport and magnetic studies indicate that conductivity increases with increasing Co content, but carrier mediated ferromagnetism is absent down to 10 K.      

Magnetic properties of Ni doped gallium nitride with vacancy induced defect

Investigations have been carried out to study the ferromagnetic properties of transition metal (TM) doped wurtzite GaN from first principle calculations using tight binding linear muffin-tin orbital (TBLMTO) method within the density functional theory. The present calculation reveals ferromagnetism in nickel doped GaN with a magnetic moment of 1.13 μ_B for 6.25% of Ni doping and 1.32 μ_B for 12.5% of nickel doping, there is a decrease of magnetic moment when two Ni atoms are bonded via nitrogen atom. The Ga vacancy (V_Ga) induced defect shows ferromagnetic state. Here the magnetic moment arises due to the tetrahedral bonding of three N atoms with the vacancy which is at a distance of 3.689 Å and the other N atom which is at a distance of 3.678 Å .On the other hand the defect induced by N vacancy (V_N) has no effect on magnetic moment and the system shows metallic character. When Ni is introduced into a Ga vacancy (V_Ga) site, charge transfer occur from the Ni ‘d’ like band to acceptor level of V_Ga and formed a strong Ni–N bond. In this Ni–V_Ga complex with an Ni ion and a Ga defect, the magnetic moment due to N atom is 0.299 μ_B .In case of Ni substitution in Ga site with N vacancy, the system is ferromagnetic with a magnetic moment of 1 μ_B.     

Synthesis and magnetic properties of Mn doped CuO nanowires

Study of diluted magnetic semiconductor nanowires is one of the important topics in materials science. By using Mn-Cu alloy as the starting material, Mn doped CuO nanowire arrays have been synthesized in air at the temperature of 550 °C. X-ray diffraction measurements and scanning electron microscopic study shows that the nanowires were grown on Cu₂O substrate. Transmission electron microscopic study shows the single crystal property of the nanowires. Magnetic measurements show ferromagnetic property in the Mn doped CuO nanowires with the critical temperature higher than 80 K.     

Investigations of cobalt and carbon codoping in gallium nitride for spintronic applications

Extensive theoretical investigations have been carried out to study the ferromagnetic properties of transition metal doped wurtzite GaN using the Tight Binding Linear Muffin-tin Orbital (TBLMTO) method within the density functional theory. The present calculation reveals ferromagnetism in cobalt doped GaN when one gallium is replaced by cobalt in a 3×3×2 supercell of GaN, which gives rise to a cobalt concentration of 2.77%. The system is half-metallic with a magnetic moment of 4.0 μ_B. When Co is bonded with one carbon, there is a drastic decrease in magnetic moment and the system becomes metallic. When Co dimer is introduced via nitrogen which corresponds to the Co concentration of 5.5% the magnetic moment is 3.99 μ_B and the system is half-metallic. Same trend is observed when Co is bonded via nitrogen with unequal distance. When cobalt dimer is formed via carbon, the moment becomes 2.95 μ_B and it shows metallic character. For dimer via carbon with unequal distance, the moment is 3.0 μ_B and the system becomes semiconductor. For higher percentage of cobalt dopant the system shows metallic character. C and Co doped GaN samples have been synthesized experimentally and characterized with X-ray diffraction, transmission electron microscopy, micro-Raman and superconducting quantum interface device measurements. The observed results are correlated with the theoretical studies.     

Enhanced ferromagnetic properties of Fe+N codoped TiO2 anatase

The undoped, Fe-doped, N-doped and Fe+N codoped titanium dioxide (TiO₂) samples were synthesized. Detailed analysis shows that all the samples are pure anatase with the shape of a nanorod, and N and Fe ions are incorporated into the TiO₂ lattice. For all the samples, the saturation magnetization at room temperature is in the order of the Fe+N codoped TiO₂>N-doped TiO₂>Fe-doped TiO₂>undoped TiO₂. Upon N doping, enhanced ferromagnetic properties were observed. The N content in Fe+N codoped TiO₂ is about two times as large as that in the N-doped TiO₂, which may account for the largest saturation magnetization observed in Fe+N codoped TiO₂. It is suggested that metal ion and N codoping may provide a new approach for increasing the saturation magnetization in TiO₂-based dilute magnetic semiconductors.     

A close correlation between induced ferromagnetism and oxygen deficiency in Fe doped In2O3

We report on the reversible manipulation of room temperature ferromagnetism in Fe (5%) doped In₂O₃ polycrystalline magnetic semiconductor. The X-ray diffraction and photoemission measurements confirm that the Fe ions are well incorporated into the lattice, substituting the In³⁺ ions. The magnetization measurements show that the host In₂O₃ has a diamagnetic ground state, while it shows weak ferromagnetism at 300 K upon Fe doping. The as-prepared sample was then sequentially annealed in hydrogen, air, vacuum and finally in air. The ferromagnetic signal shoots up by hydrogenation as well as vacuum annealing and bounces back upon re-annealing the samples in air. The sequence of ferromagnetism shows a close inter-relationship with the behavior of oxygen vacancies (V_o). The Fe ions tend to a transform from 3+ to 2+ state during the giant ferromagnetic induction, as revealed by photoemission spectroscopy. A careful characterization of the structure, purity, magnetic, and transport properties confirms that the ferromagnetism is due to neither impurities nor clusters but directly related to the oxygen vacancies. The ferromagnetism can be reversibly controlled by these vacancies while a parallel variation of carrier concentration, as revealed by resistance measurements, appears to be a side effect of the oxygen vacancy variation.     

Structural, magnetic and transport properties of Ni-doped ZnO films

In this work, Ni-doped ZnO (Zn_1−xNi_xO, x=0, 0.03, 0.06, 0.11) films were prepared using magnetron sputtering. X-ray diffraction (XRD), X-ray absorption spectroscopy (XAS), temperature dependence electrical resistance, Hall and magnetic measurements were utilized in order to study the properties of the Ni-doped ZnO films. XRD and XAS results indicate that all the samples have a ZnO wurtzite structure and Ni atoms incorporated into ZnO host matrix without forming any secondary phase. The Hall and electrical resistance measurements revealed that the resistivity increased by Ni doping, and all the Ni-doped ZnO films exhibited n-type semiconducting behavior. The magnetic measurements showed that for the samples with x=0.06 and 0.11 are room-temperature ferromagnetic having a saturation magnetization of 0.33 and 0.39 μ_B/Ni, respectively. The bound-magnetic-polaron mediated exchange is proposed to be the possible mechanism for the room-temperature ferromagnetism in this work.     

Photo-induced magnetic polarons in semiconductors

Exciton magnetic polarons observed in dilute magnetic semiconductors were investigated by steady-state and pico-second time-resolved photoluminescence measurements and have shown characteristic behavior of exciton localization processes in bulk-Cd_1-x Mn _x Te and also in the quantum structures composed of the dilute magnetic semiconductors. For the quantum structures spin-dependent coherent polarizations associated with excitons and biexcitons were studied by degenerate four-wave mixing experiment. Also investigated for different chalcogenide spinel ferromagnetic semiconductors was photo-induced enhancement of exchange interaction between magnetic ions by direct magnetic flux detection in the vicinity of the Curie temperatures.     

NiO的高压结构和等温状态方程研究

 运用金刚石对顶砧（Diamond Anvil Cell,DAC）技术,以液氩作为传压介质,在最高压力为67 GPa的压力范围内对NiO进行了原位的同步辐射X射线衍射研究。在整个实验过程中,并未发现第一类结构相变,也没有发现T.Sasaki等预测的在60 GPa左右轴比c/a随压力的变化率而突然增大的现象,且此压力范围内NiO的结构畸变程度随压力的变化趋势相比以前的研究结果要平缓一些。用三阶的Brich-Murnaghan方程对实验数据进行拟合,得到的体弹模量及其对压力的一阶导数分别为B₀=195(4) GPa和B₀′=5.3(2)。     

Unconventional ferromagnetism and transport properties of (In,Mn)Sb dilute magnetic semiconductor

Narrow-gap higher mobility semiconducting alloys In_1-xMn_xSb were synthesized in polycrystalline form and their magnetic and transport properties have been investigated. Ferromagnetic response in In_0.98Mn_0.02Sb was detected by the observation of clear hysteresis loops up to room temperature in direct magnetization measurements. An unconventional (reentrant) magnetization versus temperature behavior has been found. We explained the observed peculiarities within the frameworks of recent models which suggest that a strong temperature dependence of the carrier density is a crucial parameter determining carrier-mediated ferromagnetism of (III,Mn)V semiconductors. The correlation between magnetic states and transport properties of the sample has been discussed. The contact spectroscopy method is used to investigate a band structure of (InMn)Sb near the Fermi level. Measurements of the degree of charge current spin polarization have been carried out using the point contact Andreev reflection (AR) spectroscopy. The AR data are analyzed by introducing a quasiparticle spectrum broadening, which is likely to be related to magnetic scattering in the contact. The AR spectroscopy data argued that at low temperature the sample is decomposed on metallic ferromagnetic clusters with relatively high spin polarization of charge carriers (up to 65% at 4.2 K) within a cluster.     

Comparison study of some structural and magnetic properties of nano-structured and bulk Li-Ni-Zn ferrite samples

Nanoparticles of Li_0.1(Ni_1−xZn_x)_0.8Fe_2.1O₄ with x varying from 0.0 to 1.0 were prepared by chemical co-precipitation method. A part of these samples was sintered at 1200 °C for 2 h to obtain bulk samples via increase in particle sizes; the other part was left as-prepared. Structural and magnetic properties comparison studies were carried out between the as-prepared nanoparticle samples and their bulk counterparts. The X-ray diffraction and infrared spectroscopy were used to characterize the samples. The XRD pattern of the samples provides evidence of single phase formation of spinel structure with cubic symmetry. The lattice constant, and X-ray density were calculated from the XRD data. The density of the samples was measured and consequently the porosity was calculated too. In the present work, the effect of nano-structured particle size and Zn concentration on parameters such as bond length and vibration frequency are discussed with the help of the IR data. The B-H loops of all samples obtained by using vibrating sample magnetometer (VSM) are displayed. The reduction of saturation magnetization of the nano-structured samples in comparison with their bulk counterparts and the effect of Zn addition on saturation magnetization of all the samples are discussed.     

Structural,thermal, electrical and magnetic properties of pure and 50% La doped BiFeO3 ceramics

Polycrystalline ceramic samples of pure and 50% La substituted BiFeO₃ have been prepared by standard solid state reaction method using high purity oxides and carbonates. The formation of the single phase compound as well as its chemical analysis has been checked by X-ray diffraction and energy dispersive X-ray microanalysis (EDAX) techniques. A better agreement between observed and calculated X-ray powder diffraction patterns was obtained by performing the Rietveld refinement with a structural model using the non-centrosymmetric space group R3c. The lattice parameters in both the cases have been refined but the over-all structure remains the same. The microstructural studies have been carried out using scanning electron microscopy (SEM). Modulated differential scanning calorimetry (MDSC) has been used to detect the Neel/transition temperature in the compounds. The activation energies calculated from log σ vs 1/T curve are 0.81 eV and 1.13 eV respectively. Vibrating sample magnetometer (VSM) has been used to study the magnetic behaviour of the compounds. It has been observed that by 50% La substitution the insulating behaviour of the material has been improved and showing the antiferromagnetic to weak ferromagnetic behaviour.     

Characterization of n-GaN dilute magnetic semiconductors by cobalt ions implantation at high-fluence

In this study, we present the structural and magnetic characteristics of cobalt ions implantation at a high-fluence (5×10¹⁶ cm⁻²) into n-GaN epilayer of thickness about 1.6 μm. The n-GaN was grown on sapphire by metal organic chemical vapor deposition (MOCVD). Rutherford backscattering channeling was used for the structural study. After implantation, samples were annealed at 700, 800 and 900 °C by rapid thermal annealing in ambient N₂. XRD measurements did not show any secondary phase or metal related-peaks. High resolution X-ray diffraction (HRXRD) was performed as well to characterize structures. Well-defined hysteresis loops were observed at 5 K and room temperature using alternating gradient magnetometer AGM and Superconducting Quantum Interference Device (SQUID) magnetometer. Temperature-dependent magnetization indicated magnetic moment at the lowest temperatures and retained magnetization up to 380 K for cobalt-ion-implanted samples.