紫外ICCD相对光谱响应度测量技术研究

光谱响应度是探测器的重要技术参数之一,随着紫外探测技术的发展,精确测量紫外探测器的光谱响应度变得越来越重要。文章分析了紫外ICCD(UV-ICCD)相对光谱响应度的测量原理,采用了直接比较法测定待测探测器的相对光谱响应度,并基于具有优异紫外响应能力的科研级光谱仪建立了UV-ICCD光谱响应的测量装置。实验获取了UV-ICCD的相对光谱响应度曲线,从曲线中可以看出,UV-ICCD光谱响应范围为220～300 nm,峰值响应在270 nm附近,表明该器件具有日盲特性。不确定度分析结果显示,UV-ICCD相对光谱响应度测量的最大不确定度约为7.79％,满足测量要求。     

电润湿液体透镜暂态过程的测试与分析

提出在电压驱动下液体透镜的响应包括固有响应和强制响应,固有响应信号的函数形式由液体透镜的各种参数决定,与驱动电压无关,但其系数与驱动电压有关,强制响应与驱动电压具有相同的函数形式,液体透镜暂态过程的变化规律取决于固有响应,同样与驱动电压无关。因此,对同一液体透镜改变驱动电压仅改变暂态过程的响应幅度,不改变暂态过程的变化规律,从而也不改变液体透镜的响应时间。实验验证了液体透镜的响应可分解为固有响应和强制响应,测量了不同电压驱动下液体透镜的响应过程及响应时间,并对测试结果进行了理论分析。另外,观察到电润湿液体透镜的反冲现象,该现象出现在加载电压和撤去电压的初始阶段。     

基于偏芯结构的光纤传感器的振动传感特性研究

提出了一种基于偏芯熔接结构的光纤振动传感器,该传感器具有较好的梳状滤波特性和较高的消光比。通过对该结构的传感器的弯曲响应特性进行分析,实验结果表明该传感器对弯曲变化表现出了近似线性响应的特性。在此基础上进一步研究了传感器的振动响应特性,对传感器工作在线性响应区域和非线性响应区域的振动响应特性进行了分析和对比。实验结果表明,该传感器在线性工作区域表现出了极好的振动响应特性,其振动响应谱线与马赫曾德尔型光纤干涉仪相类似。此外,该传感器在无振动情况下的噪声极低,具有较好的实际应用价值。     

94K低温下和室温下GaN基MSM紫外光探测器性能的比较

在采用MOCVD技术生长的GaN膜上制备出MSM紫外光探测器，分别在室温下和94K低温下，测量了探测器对不同光波长的响应、同一光波长下对不同偏压的响应、不同斩波频率下的响应。结果表明，在94K下响应有了很大的改善。当光波长从360nm增加到450nm时，响应下降了3个数量级，而常温下只下降两个数量级，但探测器的时间响应常数变长了。     

Ga1-xAlxAs/GaAs光阴极光谱响应向短波延伸的机理分析和实验研究

为了实现光阴极光谱响应向短波延伸，分析了Ga1-xAlxAs/GaAs三代微光光阴极光谱响应向短波延伸的机理，提出了准禁带宽度的概念，讨论了Ga1-xAlxAs的禁带宽度随铝组份x值的增加而逐渐变宽的变化规律，计算了不同铝组份下光阴极光谱响应的短波限。通过提高光阴极材料的铝组份，做出了宽光谱响应像管，并给出了相应的光谱响应曲线。通过与标准三代微光像管光谱响应对比，发现：所得光谱响应曲线不仅向短波方向得以延伸，而且理论设计与实验结果吻合很好。     

缓释结构对B炸药烤燃响应烈度的影响

为了研究装药在缓释结构作用下的响应特性,设计了弹药烤燃系统及弹体泄压装置,分析了B炸药在热刺激作用下泄压装置对响应烈度的影响,得到了B炸药在泄压结构作用下的升温曲线与响应结果。结果表明,无泄压孔时,装药的响应等级为爆轰反应,装药的响应温度较低,响应时间较短。泄压孔面积为装药面积的2.0%时,装药的响应等级为爆轰反应;泄压孔面积为装药面积的2.5%和3.5%时,装药的响应等级均为燃烧。弹药临近响应时刻冲开泄压孔,降低了炸药内部温度,延长了响应时间。通过数值模拟得到了装药内部温度的分布情况,响应时刻炸药温度呈层状分布,炸药响应点位于炸药顶部。RDX的分解放热是B炸药点火的主要原因。弹药泄压结构可以有效降低弹药响应的剧烈程度,提高装药的热安全性。     

导体板上单极天线对电磁脉冲响应特性的矩量法分析

 针对应用广泛的单极天线,基于矩量法分析了天线对高空电磁脉冲和高功率微波、超宽带非核电磁脉冲的响应,计算了三类电磁脉冲通过天线耦合产生感应电流频谱响应和时域瞬态响应,窄带脉冲的响应曲线与入射脉冲有较大相似性,电流响应峰值依次为100,60和10.3 A,对现有大功率限幅器的功率容限提出了更高的要求。     

γ射线及质子辐照导致CCD光谱响应退化的机制

光谱响应是表征CCD性能的重要参数。为了研究辐射环境对CCD光谱响应产生影响的规律及物理机制,开展了不同粒子辐照实验,对CCD光谱响应曲线的退化形式及典型波长下CCD光响应的退化情况进行了分析。辐射效应对CCD光谱响应的影响可以分为电离总剂量效应和位移效应导致的退化,本文从这两种辐射效应出发,采用⁶⁰Co-γ射线及质子两种辐照条件,研究了CCD光谱响应的退化规律。针对460 nm（蓝光）和700 nm（红光）等典型CCD光响应波长,从辐射效应导致的损伤缺陷方面分析了CCD光谱响应退化的物理机制。研究发现,在⁶⁰Co-γ射线辐照时CCD光谱响应曲线变化是由于暗信号增加导致的,而质子辐照导致CCD对700 nm波长的光响应退化明显大于460 nm波长的光响应,且10 MeV质子导致的损伤比3 MeV质子更明显,表明位移损伤缺陷易导致CCD光谱响应退化。结果表明,电离总剂量效应主要导致CCD光谱响应整体变化,而位移效应则导致不同波长光的响应差异增大。     

石墨烯量子点法布里珀罗光纤湿度传感器

制作了一种利用普通单模光纤和石墨烯量子点材料共同构建的法布里珀罗湿度传感器.利用搭建的实验系统,在环境相对湿度11%RH～85%RH范围内进行了湿度响应实验,并对湿度上升和下降过程分别进行了测量.湿度上升过程中灵敏度为0.560 6nm/RH%,线性度为0.999 47;湿度下降过程中灵敏度为0.565 5nm/RH%,线性度达0.999 36.实验结果表明,该湿度传感器具有较高的响应灵敏度、较好的线性响应特性和测量重复性.另外对该传感头的温度响应特性进行实验研究,得到了较好的线性响应结果,温度响应灵敏度为0.035nm/℃,残差平方和为0.012 41,灵敏度标准差为2.305×10-4,湿度响应灵敏度约为温度响应的17倍.对其动态响应特性进行了典型测试,在相对湿度43%条件下得到了干涉光谱波长漂移的动态响应数据,得到了较快的动态响应,其响应时间和恢复时间分别为6.5s和9.0s.研究结果为研制低成本、易制作、高灵敏的光纤湿度传感器提供了一种有益的探索.     

窄带随机噪声作用下单自由度非线性干摩擦系统的响应

研究了单自由度非线性干摩擦系统在窄带随机噪声参数激励下的主共振响应问题.用Krylov-Bogoliubov平均法得到了关于慢变量的随机微分方程.在没有随机扰动情形,得到了系统响应幅值满足的代数方程.在有随机扰动情形,用线性化方法和矩方法给出了系统响应稳态矩计算的近似计算公式.讨论了系统阻尼项、非线性项、随机扰动项和干摩擦项等参数对于系统响应的影响.理论计算和数值模拟表明,当非线性强度增大时系统的响应显著变小,系统分岔点滞后;随着激励频率的增大系统响应变大,而当激励频率小于一定的值时,系统响应为零;增加干 关键词： 单自由度非线性干摩擦系统 主共振响应 Krylov-Bogoliubov平均法     

Thermally controlled multiband,mode-switching plasmonic filter operating at terahertz frequencies

A thermally controlled multiband, mode-switching plasmonic filter with periodic subwavelength metal asterisk-shaped air hole arrays has been proposed in the terahertz range. Utilizing the changing properties to terahertz wave propagating on the metal-semiconductor interface and in the semiconductor InSb at varying temperature, thermally controlled multiband, mode-switching plasmonic filter owns an excellent tuning ability to terahertz wave. The simulation results show that the maximum transmittance of the structure is 99.8% at 434 GHz, 80 K, the bandwidths at 80 K are 56 GHz at 0.434 THz, 14 GHz at 944 GHz and maximum intensity modulation depth could reach to 99.8% at 434 GHz between 80 K and 373 K.     

Proposing an efficient algorithm for designing universal nanoelectronic molecular logic gates

In today's world, there are still demands for minimising the dimensions of electronic circuits, the result of which is designing nanoelectronic circuits and very small molecular gates and switches. The point which causes trouble in this design is high impact of different parameters on the performance of circuit. Despite the suggestion of simple electronic circuits and different gates, impact of parameters like length of molecule, angle between different atoms, coupling situation of electrodes to molecule, the type of atoms used in a molecule's structure and other cases has made their development almost impossible. In this paper, there was an attempt to study previous works in order to, first, mention the effects of different conditions on circuit performance and, second, present an algorithm for designing gates so as to minimise the effects of these parameters on circuit performance.     

Quantum Circuits and Schr?dinger’s Cat States

Quantum systems that are confined to circuit geometries are called quantum circuits. Macroscopic superconducting circuits are quantum circuits which can be modelled using a Quantisation by Parts scheme based on the macroscopic wave function approach of Feynman. This paper studies the circuit composed of an input wire and an output plate. We find that in order to achieve a consistent theory of supercurrent flow we have to generalize the quantisation by parts scheme to quantise in a path space. The generalized theory predicts a current flow down the wire into the plane. In addition to a current flowing radially outwards in the plane, the theory allows a circulating current round the origin. Strikingly, the circulating current can flow clockwise or anti-clockwise in such a way as to generate a magnetic moment of magnitude half of a Bohr magneton for an orbiting electron in an atom and a magnetic flux half that of the magnetic flux quantum of a superconducting ring. There is also the possibility of a macroscopic superposition of the two states of opposing circulating currents resembling a Schr?dinger’s cat situation. Furthermore, we outline a setup involving an external magnetic field that may allow experimental tests of the theory.     

非线性补偿电路的探讨

本文对几种简单、实用的非线性补偿电路进行讨论。     

An Approach for Extracting Small-Signal Equivalent Circuit of Double Heterojunction δ-Doped PHEMTs for Millimeter Wave Applications

Pseudomorphic high electron mobility transistors (PHEMTs) are very important in millimeterwave application. A simple and accurate method for extracting small-signal equivalent curcuit for Double Heterojunction -doped PHEMT valid up to 40GHz is presented. First, the parasitic parameters of the equivalent circuit are determined using pinch off PHEMT except for PAD capacitances. The initial intrinsic elements are then determined by conventional analytical method. Advanced Design System is then used to optimize the whole model parameters with very small dispersion of initial values. Good agreement is obtained between simulation results and measured results for a 0.25um DH PHEMT.     

An Approach for Microprobe Measurement and Modeling for Millimeter-Wave Application

This paper describes a simple method to check the performance of microprobe. The two-port S-parameters of the microprobe are determined by one-port S-parameters measurement using HP 8510XF Network Analyzer. Based on the measurement, an equivalent circuit model for the microprobe is presented and good agreement between the measurement results and modeling results is obtained.     

An Improved Pinchoff Equivalent Circuit Model for Determining PHEMT Model Parameters for Millimeterwave Application

An improved equivalent circuit model under pinchoff condition for extracting parasitic model parameters for Double Heterojunction -doped PHEMTs is presented. Good prediction for S parameters and noise performance are obtained up to 40GHz. A modified parameter extraction technique based on this new model was use to determine a PHEMT equivalent circuit model. Signification improvements of the accuracy of S parameters are obtained by using the new pinchoff model.     

An Approach to Linear Scalable DH-PHEMT Model for Millimeterwave Application

This paper describes a scalable small-signal equivalent circuit for 0.25 m gatelength Double Heterojunction delta-doped PHEMTs. The scaling rules for all elements except the pad capacitances and bondwire inductances have been determined. Good agreement is obtained between simulation results and measured results for 2 times 20 m , 2 times 40 m, 2 times 60 m, 2 times 100 m gate width (number of gate fingers times unit gate width) DH PHEMT.     

红外焦平面探测器的读出电路

红外焦平面阵列是现代红外成像系统的关键元件 ,不论是混合式还是单片式红外焦平面阵列 ,都采用读出电路来实现信号的多路传输以减少阵列输出信号线的数目。论述了读出电路在焦平面信号传输中的作用 ;讨论了用于实现红外焦平面阵列读出电路的一些实施技术 ;提出了红外焦平面阵列读出电路今后的研究方向     

反馈网络的负载效应

在由负反馈放大器分解基本放大电路时，既要上掉反馈，又要考虑反馈网络的负载效应。本文就这一问题做了较详细的理论分析，以期进一步弄清反馈电路的基本概念。