低温热处理氧化钨电致变色薄膜的制备与性质

低温热处理氧化钨电致变色薄膜的制备与性质;电致变色;溶胶 凝胶法;聚乙烯醇;氧化钨     

介孔氧化钨电色薄膜的制备与性能研究

采用一种新的非离子型gemini表面活性剂结构导向模板, 成功制备了介孔氧化钨薄膜. 通过SAXRD, TEM和N₂吸附-脱附等方法考察薄膜的制备和微结构特性, 发现获得的产物具有三维蠕虫介孔结构, 比表面积可达145.5 m²• g^－1. 测定了该薄膜在无水高氯酸锂/碳酸丙烯酯电解质溶液中的循环伏安和电致变色性能, 并与无模板薄膜进行了对比研究. 研究表明, 由于具有更大的电化学活性比表面, 纳米介孔氧化钨薄膜表现出增强的电色性能, 在633 nm波长处的透过率调制幅度可达60%以上, 着色效率为51.7 cm²•C^－1.     

溶胶-凝胶法制备的MgxZnl—xO纳米薄膜结构和光学性质

用溶胶-凝胶法制备了不同组分的MgxZn1-xO薄膜．X射线衍射结果表明，薄膜为具有六角纤锌矿结构的纳米薄膜，晶粒尺寸3～5nm，随着Mg进入ZnO晶格，其晶格常数变小．紫外-可见吸收光谱表明，随着Mg含量的增加带隙变宽，自由激子吸收峰明显蓝移．室温光致发光光谱由很强的且与氧空位相关的深能级缺陷发光和较弱的紫外激子发光组成，激子发光强度和缺陷发光强度比随x的增大而减小，表明Mg原子进入ZnO晶格会引起深能级缺陷的增加．Mg0.03Zn0.97O薄膜经700℃热氧化后，紫外与可见发光强度比达到30．     

溶胶-凝胶法制备纳米WO_3气致变色材料

本文主要阐述了纳米WO3气致变色材料的溶胶-凝胶制备方法、气致变色机理及其应用的研究新进展,重点评述了溶胶-凝胶法中各种制备条件诸如掺杂、模板剂、溶剂、热处理温度等对这种材料的结构和性能的影响,最后展望了纳米WO3气致变色材料的研究和应用前景。我们认为,在未来的溶胶-凝胶法制备纳米WO3气致变色材料领域,如何进行最优化的掺杂设计和选择高效模板剂、如何降低气体检测温度以及气致变色机理等将是该项研究的重点。     

无模板电化学沉积法制备多孔WO3·2H2O薄膜及其电致变色性能

二水合氧化钨(WO₃·2H₂O)因其独特的层状结构且富含层间结构水,与无水WO₃相比显示出更加优异的电致变色性能。我们采用简单、无模板的阴极电化学沉积方法,成功在氧化铟锡(ITO)导电玻璃基底上制备了WO₃·2H₂O薄膜。通过改变电沉积液中过氧化氢(H₂O₂)的加入量优化沉积液的成分,获得了具有纳米多孔结构的薄膜。由此制备的WO₃·2H₂O薄膜显示出大的光学对比度(633 nm处的光学对比度大于90%)、快速的响应速度(着色、褪色时间均小于10 s),以及良好的循环稳定性(经10 000次循环后,光学对比度仍保持在90%左右)。     

无模板电化学沉积法制备多孔WO3·2H2O薄膜及其电致变色性能

二水合氧化钨(WO₃·2H₂O)因其独特的层状结构且富含层间结构水,与无水WO₃相比显示出更加优异的电致变色性能。我们采用简单、无模板的阴极电化学沉积方法,成功在氧化铟锡(ITO)导电玻璃基底上制备了WO₃·2H₂O薄膜。通过改变电沉积液中过氧化氢(H₂O₂)的加入量优化沉积液的成分,获得了具有纳米多孔结构的薄膜。由此制备的WO₃·2H₂O薄膜显示出大的光学对比度(633nm处的光学对比度大于90%)、快速的响应速度(着色、褪色时间均小于10s),以及良好的循环稳定性(经10000次循环后,光学对比度仍保持在90%左右)。     

PEO掺杂氧化镍薄膜的溶胶-凝胶法制备及电致变色性能研究

以无水醋酸镍、乙醇为前驱液, 加入适量正丁醇及PEO2000等为稳定剂, 采用改进的溶胶-凝胶法制备了稳定的PEO2000纳米Ni(OH)₂复合溶胶体系, 采用旋涂法在ITO (In₂O₃∶Sn)导电玻璃上形成均匀的氧化镍薄膜. 研究了溶胶组分对成膜性能的影响, 采用TG-DSC分析、X射线衍射仪和扫描电镜, 研究了热处理过程中的结构变化和表面形貌. 循环伏安和可见光透过率测试表明该氧化镍薄膜具有良好的电致变色性能和阳极着色效应.     

高度有序氧化钨纳米棒的制备和表征

采用直流磁控溅射法结合阳极氧化法在铝基纳米点阵上制备氧化钨(WO3)纳米棒. 运用原子力学显微镜(AFM), 电子扫描显微镜(SEM), X射线衍射仪(XRD), 电化学工作站(EW)和紫外-可见分光光度计(UV)观察表征了WO3纳米棒的表面形貌、结构、光学性能和电致变色性能. 结果表明: 在溅射过程中, 溅射粒子优先沉积于铝基纳米点阵的凸点上, 然后成核并形成棒状; WO3纳米棒的直径约为200 nm, 与铝基纳米点阵的直径一致, 拥有一定的电致变色性能.     

磷钨酸盐修饰的氧化钨薄膜的制备与电致变色性质研究

为了提高WO₃纳米粒子薄膜的光学对比度,利用层接层自组装方法,将Keggin型结构的磷钨酸盐H₃[α-PW₁₂O₄₀]与WO₃纳米粒子复合,制备[PEI/PW₁₂/PEI/WO₃]₂₀复合膜.采用扫描电镜、紫外光谱和电化学工作站对复合膜的形貌及电致变色性能进行研究,结果表明:该复合膜与单纯的WO₃纳米粒子薄膜相比,光学对比度提高了117.28%,且这种复合膜提供了较大的H⁺扩散系数,可以获得更好的电致变色性能.     

溶胶-凝胶法制备的MgxZn1-xO纳米薄膜结构和光学性质

用溶胶-凝胶法制备了不同组分的Mg_xZn_1-xO薄膜.X射线衍射结果表明,薄膜为具有六角纤锌矿结构的纳米薄膜,晶粒尺寸3～5nm,随着Mg进入ZnO晶格,其晶格常数变小.紫外-可见吸收光谱表明,随着Mg含量的增加带隙变宽,自由激子吸收峰明显蓝移.室温光致发光光谱由很强的且与氧空位相关的深能级缺陷发光和较弱的紫外激子发光组成,激子发光强度和缺陷发光强度比随x的增大而减小,表明Mg原子进入ZnO晶格会引起深能级缺陷的增加.Mg_0.03Zn_0.97O薄膜经700℃热氧化后,紫外与可见发光强度比达到30.     

脉冲激光沉积制备氧化铋薄膜的电致变色性质

通过电位阶跃和循环伏安结合现场电感偶合分光光度计(CCD)测量了脉冲激光沉积的四方结构Bi2O3薄膜的电致变色性质. 结果表明, 在波长为630 nm处出现一个明显的吸收峰, Bi2O3薄膜电极的着色时间为30 s. 吸光度-电位谱图表明, 当电位在3.5 - 0.7 V之间变化时, Bi2O3薄膜的颜色可明显地呈现由透明到暗棕色的可逆变化, 重复次数可达50 次, 在630 nm测得的着色效率约为15 cm2·C-1.     

Ferroelectric PZT Thin Films by Sol-Gel Deposition

Sol-gel spin coating has a low thermal budget, is cheap compared to vacuum-based techniques and is now routinely used to produce dense, pore-free ferroelectric films. PbZrx Ti(1 – x)O3 (PZT) is utilized in most applications because it has a large remanent polarization, high piezo- and pyroelectric coefficients and optimized electromechanical coupling factors, depending on precise composition. This paper will review some of the principles and applications of PZT films and highlight using transmission electron microscopy some of the basic problems and solutions involved in producing device-quality material on Si-substrates.     

Selective Formation of Spinel Iron Oxide in Thin Films by Complexing Agent-Assisted Sol-Gel Processing

The structure of iron oxide was controlled by regulating the hydrolytic polymerization of aquo iron complexes with organic polydentate ligands such as diols. Iron oxides were prepared by calcining the precursor polymers obtained from iron nitrate nonahydrate and diols. When the diols were 1,2-pentanediol, 1,2-hexanediol and 1,2-octanediol, α-Fe₂O₃ with corundum structure appeared exclusively or as the main crystalline phase, in spite of the amount of diol used and the calcination temperature. In the case of 1,2-decanediol and 1,2-dodecanediol, when five moles of the diols were used to one mole of iron nitrate and the calcination temperatures were below 400°C, ψ-Fe₂O₃ with spinel structure appeared as the main phase and, when less than five moles of the diols were used, α-Fe₂O₃ appeared exclusively or as the main phase, irrespective of the calcination temperature. This tendency was also observed in thin films. Thus, a transparent magnetic film composed of γ-Fe₂O₃ could be prepared by applying a benzene solution of the iron polymer, obtained with 5 equivalents of 1,2-decanediol, on quartz and calcining the gel film at 350°C.     

氧化钨薄膜微型电化学器件的研究

本文论述了WO_3薄膜氢离子敏器件的结构、原理、制备技术和测试分析。利用WO_3薄膜在H+溶液中由绝缘转化为导电特性,成功地研制成氢离子敏器件。这是一种简易而经济的微型pH敏器件技术。     

氧化银纳米粒子的制备及其动态受激荧光

采用真空蒸发沉积法和辉光放电氧化法,制备了粒径在5～30 nm之间的可控、空间分布均匀、高纯度的氧化银纳米薄膜,使薄膜成岛状生长和避免光照是制备过程中的两个关键问题.用XPS分析了Ag 3d和O 1s轨道的结合能,计算了银和氧的原子比,证明其成分为Ag2O,用XRD确定了氧化银纳米薄膜最强的衍射峰分别对应Ag2O的（111）、（110）、（200）、（211）晶面族.研究了这种薄膜在可见光波段的光吸收,计算得氧化银的禁带宽度为2.8 eV.在蓝光持续照射几分钟激活后,观察到了其中纳米粒子在蓝光激发下发黄光和绿光,在绿光激发下发红光的现象,这种光致发光具有动态“闪烁”的特点.提出了氧化银光分解引入缺陷能级（如Ag3O, Ag2＋O和Ag3＋O）新的理论模型并对此现象进行定性的解释.     

Synthesis and Properties of Highly Conductive Thin Films as Buffer Layer from Sol-Gel Process

We prepared epitaxial growth SrRuO₃ thin film on LaAlO₃ (001) (LAO) single crystal substrate and highly oriented BaTiO₃ ferroelectric thin film on the epitaxial SrRuO₃ thin film. A homogeneous precursor solution for preparing SrRuO₃ thin film was prepared with Sr(O—i—C₃H₇)₂ and Ru(NO)(NO₃)₃ as starting materials, and 2-methoxy ethanol as solvents. The as-coated thin films were heat treated at temperatures from 723 to 1273 K for 1 h in air. SrRuO₃ grew epitaxially on LAO(001) substrate, which were confirmed by XRD theta-2theta method and XRD pole figure analysis. The crystallographic relationship of the film and substrate was SrRuO₃(001) parallel to LAO(001) and SrRuO₃[110] parallel to LAO[100]. A homogeneous precursor solution for preparing BaTiO₃ thin film was prepared with Ti[O—n—(CH₂)₃CH₃]₄ and Ba(OCOCH₃)₂ as starting materials, and acetic acid, 2-methoxy ethanol. SrRuO₃ coated LAO substrates were coated by spin-coating method with the coating solution. The as-coated thin films were heat treated at temperatures from 973 to 1173 K in air. It was confirmed that the thin films were growing orientated for c-axis by measurement of XRD theta-2theta method.     

Sol-Gel Routes to Zeolite Membranes and Thin Films

The synthesis of zeolite membranes and thin films using the secondary growth process is briefly described. In this process colloidal zeolite particles (sols) are prepared hydrothermally and then subsequently deposited on substrates to produce uniform layers of controlled thickness, as illustrated with silicalite and zeolite-A. The formation and growth of the zeolite sols has been investigated in situ by small angle neutron scattering (SANS). SANS measurements on silicalite sols at progressively higher concentrations have provided details of the colloid interactions which lead to zeolite gel-layer structures which are uniform and free of defects.     

Crystallization Behavior and Properties of B-Doped ZnO Thin Films Prepared by Sol-Gel Method with Di erent Pyrolysis Temperatures

Boron-doped zinc oxide transparent (BZO) films were prepared by sol-gel method. The effect of pyrolysis temperature on the crystallization behavior and properties was systematically investigated. XRD patterns revealed that the BZO films had wurtzite structure with a preferential growth orientation along the c-axis. With the increase of pyrolysis temperature, the particle size and surface roughness of the BZO films increased, suggesting that pyrolysis temperature is the critical factor for determining the crystallization behavior of the BZO films. Moreover, the carrier concentration and the carrier mobility increased with increasing the pyrolysis temperature, and the mean transmittance for every film is over 90% in the visible range.     

An Efficient Route to Nanostructured Tungsten Oxide Films with Improved Electrochromic Properties

An effective chemical route to nanostructured tungsten oxide films derived from a peroxopolytungstic acid (PTA)/thiourea precursor solution is demonstrated. The conventional procedure of preparing the precursor needs more than 24 h for well‐mixing and refluxing the PTA‐based solution, while the thiourea‐assisted approach takes less than 1 h to prepare the precursor solution because the excess hydrogen peroxide can be efficiently eliminated by oxidation of thiourea. With the precursor solution, tungsten oxide films are deposited by spin coating followed by high temperature annealing. The film annealed at 400 °C possesses a porous nanostructure of nanocrystalline tungsten oxide embedded in an amorphous tungsten oxide matrix, which arises from the gaseous species released through decomposition of thiourea oxides during annealing. The 400 °C‐annealed, thiourea‐assisted tungsten oxide film exhibits electrochromic (EC) properties superior to those of the film prepared without thiourea, including large transmittance modulation and coloration efficiency, fast response time and adequate reliability. When increasing the annealing temperature to 450 °C, the thiourea‐assisted tungsten oxide film is also porous but well‐crystallized and shows inferior EC properties. Electrochemical impedance spectroscopy analysis indicates that, in addition to the porous structure, a fast charge‐transport rate within the solid portion of the 400 °C‐annealed nanostructured film plays a crucial role in enhancing EC performances of the thiourea‐assisted tungsten oxide film.     

Sol-Gel Processing of PbZrO3 Thin Films

PbZrO₃ (PZ) thin films have been prepared by 2-methoxyethanol route from lead oxide or lead acetate and zirconium n-butoxide. The use of lead oxide as lead source and the seeding layer of TiO₂ on Pt/TiO₂/SiO₂/Si substrate facilitate the formation of the perovskite phase.