无注入型发光二极管的载流子输运模型研究

无载流子注入型发光二极管(简称无注入型LED)因其简单的器件结构有望应用于Micro-LED、纳米像元发光显示等新型微显示技术.由于没有外部载流子注入,无注入型LED的内部载流子输运行为无法直接用传统的PN结理论进行描述.因此,建立无注入型LED的载流子输运模型对于理解其工作机理和提高器件性能具有重要意义.本文根据无注入型LED的器件结构,结合PN结理论建立无注入型LED的载流子输运数学模型.基于该数学模型解释器件的工作原理,获得器件的载流子输运特性,揭示感应电荷区长度、内部PN结压降与外加驱动电压频率的关系.根据建立的数学模型提出了针对无注入型LED器件设计的建议:1)减小感应电荷区掺杂浓度,可有效提高内部LED的压降;2)利用PN结的隧穿效应,可有效提高器件内部LED的压降;3)使用正负方波驱动可以获得比正弦驱动更大的内部LED压降.本文有关无注入型LED的载流子输运模型的研究有望为改善无注入型LED器件结构、优化工作模式提供理论指导.     

有机层界面对双层有机发光二极管复合效率的影响

建立了双层有机发光二极管中载流子在有机层界面复合的无序跳跃理论模型.由于有机分子材料的空间及能带结构的无序性,采用刚体模型处理有机层界面问题是不恰当的,而采用无序跳跃模型比较合理.复合效率及复合电流由载流子跳跃距离、有机层界面的有效势垒高度及该界面处的电场强度分布所决定：在双层器件ITO/α-NPD/Alq₃/Al中,当所加电压小于19.5V时,复合效率随着载流子跳跃距离的增加而增加,而大于19.5V时,复合效率随着其距离的增加而减少;复合效率随着有机层界面有效势垒高度的增加而增加;关键词：有机层界面双层有机发光二极管复合效率有效势垒高度无序跳跃模型     

载流子迁移率对单层有机发光二极管复合效率的影响

建立了在单层有机发光二极管中电场强度不太大(E≤104Vcm)的情况下,载流子注入、传输和复合的理论模型.通过求解非线性Painleve方程得出了电场强度随坐标变化的解析函数关系式以及电流密度随电压变化关系,给出了电流密度以及器件的复合效率在不同的载流子迁移率情况下随电压变化关系图像.结果表明,复合效率受载流子迁移率影响较大,在器件中多数载流子应具有较低的迁移率,而少数载流子应具有较高的迁移率,这样有利于载流子的注入和传输,从而可提高发光效率.并且得出当空穴迁移率大于电子迁移率时,复合区域偏向阴极,反之亦关键词：单层有机发光二极管复合效率迁移率     

DPVBi/Alq3基有机发光二极管中载流子复合区移动的研究

制备了以结构ITO/PCBM:PVK(x Wt%,～40nm)/DPVBi(30 nm)/Alq3(30 nm)/Al为基础的一系列有机发光二极管,利用电致发光光谱分析了DPVBi/Alq3基有机发光二极管中载流子复合区的移动.通过氟化锂的阴极修饰,改变了器件的载流子注人情况;通过PCBM的浓度变化,改变了载流子的输运情况,讨论了这些因素对载流子复合区形成的影响.同时通过改变对器件所加的电压,讨论了电压对载流子复合区形成的影响,并分析了其影响的本质.     

强化载流子传输实现高亮度高效率钙钛矿量子点发光二极管

金属卤化物钙钛矿量子点因其具有高光致发光量子产率、高色纯度、带隙可调等优良的光学性能,具备成为下一代发光显示材料的潜力。目前,红绿钙钛矿量子点发光二极管（PQLED）的电致发光效率已经达到有机发光二极管（OLED）的水平。然而,有机长链配体阻碍了电荷的传输,导致钙钛矿量子点发光二极管在最大外量子效率（EQE）下的亮度较低。为了实现钙钛矿量子点发光二极管在最大EQE下仍然具有较高的发光亮度,我们用无机配体CaBr₂部分替换有机长链配体,强化PQLED中的载流子传输,并提升电致发光的载流子注入。同有机长链配体和有机短链配体相比,无机配体能够减缓有机链存在所造成的电绝缘性,改善QDs电导性,进一步增强QDs的发光特性。基于这种策略,我们实现了在3753cd/m²高亮度下峰值EQE为10.57%的钙钛矿量子点发光二极管。在6.6V的工作电压下,PQLED的最大亮度高达116612cd/m²。     

有机电致发光器件中载流子的输运和复合发光

以高场作用下载流子对三角势垒的FowlerNordheim隧穿理论为基础,建立了单层有机电致发光器件中载流子输运和复合发光模型,给出了薄膜中电子空穴对的解离和复合概率及电子和空穴的密度分布.计算并讨论了外加电压和注入势垒对器件电流和复合效率的影响.关键词：电致发光器件载流子输运载流子复合     

具有新型双空穴注入层的有机发光二极管

采用新型双空穴注入层N, N, N', N'-tetrakis(4-Methoxy-phenyl)benzidine/Copper phthalocyanine(MeO-TPD/CuPc)及器件结构:ITO/MeO-TPD(15 nm)/CuPc(15 nm)/ N, N'-Bis(naphthalen-1-yl)-N, N'-bis(phenyl)benzidine (NPB, 15 nm)/8-hydroxyquinoline (Alq₃, 50 nm)/LiF(1 nm)/Al(120 nm), 研制出高效有机发光二极管(器件D), 与其他器件(器件A, 没有空穴注入层的器件; 器件B, MeO-TPD单空穴注入层; 器件C, CuPc单空穴注入层)相比, 其性能得到明显改善. 器件D的起亮电压降至3.2 V, 比器件A, B, C的起亮电压分别降低了2, 0.3, 0.1 V. 器件D在10 V时, 其最大亮度为23893 cd/m², 最大功率效率为1.91 lm/W, 与器件A, B, C的最大功率效率相比, 分别提高了43% (1.34 lm/W), 22% (1.57 lm/W), 7% (1.79 lm/W). 性能改善的主要原因是由于空穴注入和传输性能得到了改善, 通过单空穴型器件的J-V 曲线对这一现象进行了分析.关键词：有机发光二极管空穴注入层功率效率势垒     

高分子发光二极管载流子注入过程研究

采用交流阻抗谱,电容-电压,电容-频率等实验方法,研究了共轭高分子MEH-PPV(poly［2-methoxy,5-(2-ethylhexoxy)-1,4-phenylene vinylene］)发光二极管的载流子注入过程.对于结构为ITO/PEDOT/MEH-PPV/Ba/Al的发光器件,实验结果表明,电极界面是欧姆接触的,载流子的注入是非平衡的,器件薄膜中存在陷阱容易俘获注入电荷,形成空间电荷区,陷阱密度约为3.75×10¹⁶cm^-3.关键词：高分子发光二极管交流阻抗谱cole-cole图载流子注入     

有机半导体异质界面电荷传输解析模型研究

有机半导体多层薄膜器件的性质很大程度上由有机-有机界面的传输性质所决定,但是现有的关于有机-有机界面的分析模型很难适用于实际器件的模拟.以Miller-Abrahams跳跃传导理论为基础,充分考虑有机-有机界面和金属-有机界面性质的不同,建立了一个新的描述有机-有机异质界面电荷传输的解析模型.结果表明有机异质界面的载流子传输不仅取决于界面的肖特基势垒,而且还取决于界面附近两边的电场强度和载流子浓度.此模型可用于有机半导体多层薄膜器件的电流密度、电场分布和载流子浓度分布的自洽计算.关键词：有机半导体界面载流子传输     

红色有机发光二极管

制备了以芳香族二胺类衍生物TPD为空穴传输层、8－羟基喹啉铝Alq3掺杂红光染料DCJTB作为发光层LiF/Al为复合电极的红色发光二极管。研究了不同掺杂质量分数对器件发光光谱、亮度电流电压特性的影响。发现由于DCJTB的自极化作用,发光峰值位置有30nm的移动,当掺杂质量分数为0.2％和3％时,器件的最高亮度分别为17400cd/m^2和2900cd/m^2,20mA/cm^2时其亮度又分别为1080cd/m^2和150cd/m^2,量子效率分别为2％和0.5％。     

Injection and transport of electric charge in a metal/copolymer structure

The dynamical processes of the electric charge injection and transport from a metal electrode to the copolymer are investigated by using a nonadiabatic dynamic approach. The simulations are performed within the framework of an extended version of the one-dimensional Su-Schrieffer-Heeger (SSH) tight-binding model. It is found that the electric charge can be injected into the copolymer by increasing the applied voltage. For different structures of the copolymer, the critical voltage biases are different and the motion of the injected electric charge in the copolymer varies obviously. For the copolymer with a barrier-well-barrier configuration, the injected electric charge forms a wave packet due to the strong electron-lattice interaction in the barrier, then comes into the well and will be confined in it under a weak electric field. Under a medium electric field, the electric charge can go across the interface of two homopolymers and enter into the other potential barrier. For the copolymer with a well-barrier-well configuration, only under strong enough electric field can the electric charge transfer from the potential well into the barrier and ultimately reach a dynamic balance.     

一维量子力学典型模型的数值解研究

一维有限深势阱、双势阱,一维势垒和双势垒是量子力学中最基本的模型,我们在工科物理教学中,利用计算机数值计算处理此类问题,进行了有益地探索并取得较好的效果。     

Electronic transport for armchair graphene nanoribbons with a potential barrier

This paper studies the electronic transport property through a square potential barrier in armchair-edge graphene nanoribbon (AGNR). Using the Dirac equation with the continuity condition for wave functions at the interfaces between regions with and without a barrier, we calculate the mode-dependent transmission probability for both semiconducting and metallic AGNRs, respectively. It is shown that, by some numerical examples, the transmission probability is generally an oscillating function of the height and range of the barrier for both types of AGNRs. The main difference between the two types of systems is that the magnitude of oscillation for the semiconducting AGNR is larger than that for the metallic one. This fact implies that the electronic transport property for AGNRs depends sensitively on their widths and edge details due to the Dirac nature of fermions in the system.     

以LiF修饰阴极的有机电致发光器件性能的提高

提出了用一种无机半导体的模型来计算有机电致发光器件(OELDs)的J-V特性.通过在金属/有机物界面插入薄LiF层,由此引入的偶极子能极大地降低了电子的注入势垒和OELDs的开启电压.从而,载流子的注入得到了平衡,OELDs的性能得到了较大提高.经过数值计算,发现LiF插入层有一个约为1.5~5.0nm的最优厚度.LiF层太厚或太薄都会提高器件的开启电压、降低器件的性能.结果表明:这一模型可以用来解释OELD通过LiF修饰阴极后性能的提高.     

Static and Dynamic Electron Holography of Electrically Active Grain Boundaries in SrTiO3

The dynamics of electrostatic potential barriers at grain boundaries (GBs) in Nb-doped SrTiO₃ bicrystals is investigated using a unique combination of bulk and in-situ TEM electrical measurements across isolated GBs, coupled with electron holography under in-situ applied bias. The Nb bulk-doped bicrystals exhibit a positive GB potential that suppresses reversibly under applied bias greater than the nonlinearity threshold in the current-voltage curve. This suppression is interpreted as break-down of the potential barrier to current transport.The results on Nb bulk-doped bicrystals have been compared to those in which Mn has been added as a grain boundary specific dopant. This acceptor doping of the grain boundary causes an appreciable increase in the grain boundary resistance and extension of the nonlinear regime. A preliminary account of static electron holography shows a relatively flat potential profile across the GB, indicating probable compensation of donor states at the GB core with Mn-acceptors. Interestingly, the phase profile under applied bias in this case exhibits a reversible dip at the GB which is interpreted as an activation of GB trap states due to Mn-acceptor dopants trapping extra electrons (the majority charge carriers) at the GB core, inducing a negative GB potential, and diminishing current transport until the threshold bias is exceeded.The synergistic combination of nanoscale TEM measurements coupled with traditional macroscopic electrical measurements is emphasized.     

铝-金刚石界面电子特性与界面肖特基势垒的杂化密度泛函理论HSE06的研究

宽带隙半导体金刚石具有突出的电学与热学特性,近年来,基于金刚石的高频大功率器件受到广泛关注,对于金属-金刚石肖特基结而言,具有较高的击穿电压和较小的串联电阻,所以金属-金刚石这种金半结具有非常好的发展前景.本文通过第一性原理方法去研究金属铝-金刚石界面电子特性与肖特基势垒的高度.界面附近原子轨道的投影态密度的计算表明:金属诱导带隙态会在金刚石一侧产生,并且具有典型的局域化特征,同时可以发现电子电荷转移使得Fermi能级在金刚石一侧有所提升.电子电荷在界面的重新分布促使界面形成新的化学键,使得金属铝-氢化金刚石形成稳定的金半结.特别地,我们通过计算平均静电势的方法得到金属铝-氢化金刚石界面的势垒高度为1.03 eV,该值与金属诱导带隙态唯像模型计算的结果非常接近,也与实验值符合得很好.本文的研究可为金属-金刚石肖特基结二极管的研究奠定理论基础,也可为金刚石基金半结大功率器件的研究提供理论参考.     

金属-半导体超晶格中界面电荷的生成机理

采用LMTO ASA能带计算方法,研究(Si₂)₃ (2Al) ₆ (001),(Ge₂)₃ (2Al) ₆ (001),(Ge₂)₃ (2Au) ₆ (001)和(Ge₂)₃ (2Ag) ₆ (001)超晶格中半导体界面电荷Qss的生成机理,结关键词：Schottky势垒界面电荷     

Modification of anode surface in organic light-emitting diodes by chalcogenes

Influence of thin chalcogen X (S, Se, Te) interlayer between anode (indium-tin oxide, ITO) and a layer of N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD) used as a hole-transport layer (HTL) on the operating characteristics of organic light-emitting diodes (OLEDs) of composition ITO/X/TPD/Alq₃/Yb (Alq₃ - aluminum 8-quinolinolate) has been investigated. It was found that the sulphur layer decreases operating voltage and enhances operating stability of a device while the selenium or tellurium interlayers impair these characteristics.