硅基二氧化硅波导和SOI脊型波导应力双折射研究

采用有限元方法分析了硅基二氧化硅波导和SOI（Silicon on Insulator）脊型波导内部残留热应力引起的双折射.对于硅基二氧化硅波导,应力双折射系数的数量级为10－4,对于上包层为空气的SOI脊型波导,该系数的数量级为10－5,对于上包层为SiO2的SOI脊型波导,该系数的数量级为10－3,可见在硅基二氧化硅波导和上包层为SiO2的SOI脊型波导中产生了大的应力双折射,而在上包层为空气的SOI脊型波导中应力双折射较小.     

光波导覆层热膨胀系数对应力双折射影响的分析

用有限元方法计算了硅基光波导器件的应力，得到由应力引起的双折射，从理论上分析了内应力对器件偏振特性的影响。得出结论：硅基与其它层材料热膨胀系数的不同，是引起芯区双折射的主要因素，通过掺杂、调整覆层的热膨胀系数，可以得到双折射系数较小的光波导。     

Enhanced light trapping for the silver nanoparticles embedded in the silica layer atop the silicon substrate

The optical properties of the structures with silver nanoparticles embedded in the silica layer atop the silicon substrate are simulated by the finite-difference time-domain method. The effects of nanoparticle size, period, silica layer thickness, and the angle of incidence of the illuminated light on optical transmissions are studied. It is found that there is the red-shift for the maximum of the total light transmitting into the silicon substrate as the silica layer thickness increases. The electric field intensity distributions and the average power densities for the structure with largest optical transmission is studied, and the strong electric field intensities are found in the silica regions surrounding to the silver nanoparticles, which can help the light energy going into the silicon substrate. By controlling the structure parameters, the optical transmissions of the structures with the silica layer can have higher optical transmissions than the cases without the silica layer. The silica layer plays the role as the graded refractive index layer between the air and the silicon substrate, and the light power from the incident wave can transmit into the silicon substrate with less optical reflections for choosing a suitable silica layer thickness. A guideline to design the structures with high optical transmissions for the solar spectra is given. This study cannot only be useful for the solar cells applications, but also other antireflection applications.     

Control of birefringence using polymer as cladding layer in optical planar waveguides

We demonstrate theoretically that a polymer layer, when used as cladding layer for silica-based planar optical waveguides on a silicon substrate, can substantially reduce birefringence. Multilayer planar optical waveguides usually exhibit stresses that are caused by thermal-induced strains that originate from the bonding of the layers, in addition to intrinsic strains. Effect of various intrinsic properties on thermal stress as a function of thickness of the guiding layer is studied. It is shown that it is possible to achieve the thermal stress free and, hence, the stress-induced birefringence free waveguide devices by proper waveguide designs.     

基于一种易于制作的混合型表面等离激元波导结构的超紧凑截线滤波器

提出并分析了一种结构紧凑的截线型滤波器。该滤波器建立在一种硅基混合型表面等离激元波导结构上。与通常的混合等离激元结构相比,该波导结构在制作时只需对顶部的一层硅材料进行刻蚀,不需在光刻步骤进行对准和套刻,工艺简单易行。该截线滤波器由一截突柱波导与直波导耦合组成,并采用三维时域有限差分方法对其频谱响应进行模拟计算。计算结果表明该滤波器与现有文献中的二维金属-绝缘体-金属波导截线滤波器具有类似的频谱特性。另外,还进一步分析了截线部分及波导自身尺寸对器件输出频谱的影响。     

Plasmon mode transformation in modulated-index metal-dielectric slot waveguides

The concept of adiabatic mode transformation between silicon waveguide and surface plasmon-polariton modes in subwavelength metal-dielectric slots is investigated. The mode transformer consists of a modulated-index slot region, which is bound by two metal slabs. Using the design scheme, we will show that the optical dispersion of a modulated-index metal slot waveguide can be engineered well above the silicon light-line on a large wavelength region, allowing direct phase-matching between surface plasmon polaritons and traditional waveguide modes. Based on full-field, finite difference simulations, we demonstrate that reversible mode conversion can be achieved within submicrometer length scales.     

多孔硅通道型光波导的制备及传输损耗的测量

利用多孔硅在阳极腐蚀过程中外加的光照度与孔隙率的对应关系,提出了一种利用光照控制多孔硅折射率的方法制备通道型光波导技术.对制备出的多孔硅波导损耗进行了分析.由于多孔硅波导层中孔状结使得波导端面较为粗糙,耦合损耗大是多孔硅光波导传输损耗测量中遇到的的问题,对此采用了一种非破坏性的简便的优化端面耦合传输损耗测量方法,可以实现入射光束与波导的完全耦合,消除了因光波与波导中导波模式间失配引起的损耗.较精确的测量出实验中制备的通道型多孔硅光波导的传输损耗为16.2dBcm,波导端面的散射损耗为3.6dB.     

Analysis of an ultra-compact wavelength filter based on hybrid plasmonic waveguide structure

In this letter, we propose and analyze an ultra-compact wavelength filter on silicon-based hybrid plasmonic waveguides, which confines light in a nanometeric silica dioxide layer between the silicon substrate and metal cap. The filter consists of a stub structure coupled to a straight waveguide. The three-dimensional finite-difference time-domain (FDTD) method is applied to calculate the spectral responses of such devices. Similar resonant behaviors are obtained since those devices are based on two-dimensional Metal-Insulator-Metal waveguide structure. Results also show that by adding stubs and tuning the distance between stubs can further improve the device's performance and shape the spectral response to some extent.     

InGaAsP/InP evanescent mode waveguide optical isolators and their application to InGaAsP/InP/Si hybrid evanescent optical isolators

We theoretically investigated InGaAsP/InP evanescent mode waveguide optical isolators and proposed their application to InGaAsP/InP/Si hybrid evanescent optical isolators. InGaAsP/InP evanescent optical isolators are composed of semiconductor optical amplifier (SOA) waveguides having InGaAsP multiple quantum well (MQW) active layer and upper InGaAsP waveguide layer with ferromagnetic layer. Optical isolation is obtained for evanescent optical mode in the InGaAsP waveguide layer. InGaAsP/InP/Si hybrid evanescent optical isolators are theoretically proposed based on the idea of InGaAsP/InP evanescent optical isolators. InGaAsP/InP/Si hybrid evanescent optical isolators are composed of ferromagnetic metal loaded silicon evanescent waveguides with wafer-bonded InGaAsP/InP optical gain material. The optical isolation and propagation loss are discussed with the structure of silicon evanescent waveguides, and optical isolation of 8.0 dB/mm was estimated. The concept of semiconductor evanescent mode optical isolators is feasible with InP based photonic integrated circuits and advanced silicon photonics.     

Stress reduction in planar waveguide using polymer top layer

Planar optical waveguides consisting of layers from different materials created at elevated temperatures usually exhibit substantial stresses. By controlling the layer thickness of polymeric top layer on planar waveguide structures, it is possible to use very thin layers for stress compensation, significantly reducing required deposition times. It is possible to reduce birefringence within planar device by controlling top polymer layer thickness with thermal expansion coefficient greater than silica or PMMA.     

波导型钯(Pd)膜氢传感器数值模拟及优化

基于离子交换波导的集成型器件是氢敏传感器中很有发展潜力的一种. 传感区域由离子交换波导及其表面的金属钯膜组成, 通过有限差分法（FDM）计算了这种波导结构中的导模及表面等离子模的模场分布, 分析了其传播特性与钯膜光学常数的关系, 并结合束传播方法（BPM）对钯膜的厚度进行了优化, 使其具有最高的灵敏度.     

聚合物/二氧化硅混合型无热化阵列波导光栅参量的优化

研究一种新型无热化聚合物/二氧化硅混合波导组成的硅基二氧化硅阵列波导光栅.阵列波导光栅对温度的依赖性受波导物质的折射率和波导芯的尺寸影响.通过调节这些参量就可以减小温度对阵列波导光栅的影响.优化得到混合型阵列波导光栅在温度20~70℃范围内波谱漂移小于常规型 AWG结构的5%.     

Dispersion parameters and nonlinear optical properties of silicon nitride rib waveguides

Silicon nitride rib waveguides are numerically studied by use of a full-vectorial mode solver program based on finite difference method. Dispersion parameters, up to the third-order, are computed for waveguides of heights 0.8 μm, 0.9 μm, and 1 μm. Like silicon-on-insulator waveguides, silicon nitride rib waveguides allow us to tailor dispersion parameters at telecom wavelengths. Deeply-etched silicon nitride rib waveguides of height up to 1.5 μm are investigated for correct geometries to achieve polarization independence. The computations lead to a minimum etch depth which can be written as linear function of the waveguide height. Etch-depth and waveguide height dependencies of the nonlinear refractive index coefficient of the silicon nitride are studied. It is shown that third-order optical nonlinearities in silicon nitride rib waveguides can be enhanced by suitable choices of waveguide parameters.     

带有多孔二氧化硅间隔层的导模共振光栅实现染料激光器发射增强

导模共振光栅是一种典型的平面波导共振结构,可在光栅表面或波导层内形成较强的局域电场,能增强光与物质的相互作用.本文在导模共振结构的光栅层和基底层之间,引入低折射率的多孔二氧化硅间隔层,显著增强了局域电场与增益介质的接触度.结果表明,引入多孔二氧化硅后,共振产生的电场增强区域上移至激光染料层,增加了激光染料与电场的相互作用,实现了激光出射增强.本文基于时域有限差分法,对结构参数进行分析优化,研究了820 nm共振波长激发下的出射激光特性,得到了连续的激光出射,其能量阈值约为2.5 mJ/cm^2,线宽约为0.3 nm.本文提出的结构实现了对表面局域电场的有效调控,增强了激发光与增益介质的相互作用,不但可应用于激光器,还为其它发光器件的设计提供了参考.     

前后光栅周期对于双光栅结构薄膜太阳能电池光俘获效应的影响

本文用时域有限差分法对硅层等效厚度为100 nm的具有不同前后光栅周期的介质/金属双光栅结构薄膜太阳能电池进行了模拟分析,比较了三角形最佳相同与不同周期光栅结构的吸收光谱特性,分析了光栅高度、填充比、硅吸收层厚度对最佳相同和不同周期光栅结构光吸收特性的影响,以及相应结构中导致光吸收增强的共振模式.结果表明前后光栅周期为1:1的共形双光栅结构中存在光泄漏现象,偏离1:1后的光栅结构可有效地抑制低级次衍射光的泄漏,前光栅周期小于后光栅周期的结构光吸收性能的提高来自于平面波导模式在吸收层中的有效激发和传播,而前光栅周期大于后光栅周期的结构光吸收性能的提高则来自于后光栅界面上所激发的等离子体极化模式.在较厚的硅吸收层厚度,前后光栅周期比为1:2和1:3的电池结构也会出现光泄漏现象,从而使具有最大光吸收效率的结构偏离这些周期比结构的位置.     

Efficient input and output fiber coupling to a photonic crystal waveguide

The efficiency of evanescent coupling between a silica optical fiber taper and a silicon photonic crystal waveguide is studied. A high-reflectivity mirror on the end of the photonic crystal waveguide is used to recollect, in the backward-propagating fiber mode, the optical power that is initially coupled into the photonic crystal waveguide. An outcoupled power in the backward-propagating fiber mode of 88% of the input power is measured, corresponding to a lower bound on the coupler efficiency of 94%.     

基于硅波导的喇曼光放大器

在硅波导上添加反向偏压的PIN结构,当波导产生受激喇曼散射时,可以将波导中双光子吸收(TPA)产生的光生自由载流子扫出波导,降低了波导的非线性损失,极大地提高了硅波导中泵浦光对信号光的喇曼增益。为了应用已经非常成熟的硅工艺,并且应用硅波导使器件小型化,根据法布里-帕罗(F-P)腔和行波放大器理论,在硅波导两端的解理面蒸镀增透膜,应用这种波导的喇曼效应设计了一种光放大器,即基于硅波导的喇曼光放大器。建立了计算放大器增益的方程,给出了不同波导长度和输入功率情况下的放大器增益,得出适当增加波导长度和泵浦光功率可以得到较高喇曼增益的结论。基于硅的光放大器有较高的饱和功率且没有泵浦源的限制,通过调整泵浦激光的波长可以放大不同波长的信号光。     

Vectorial whispering gallery mode solvers based on straight waveguide modes

In this paper, whispering gallery mode solvers based on a set of corresponding straight waveguide modes are proposed. The solvers project whispering gallery modes onto a linear combination of straight waveguide modes through a cavity residual operator eigensolution formalism and direct straight waveguide expansion procedures. With these implementations, a perfectly matched layer can be imposed at the cavity computation window edges automatically and optical properties of plain and metal coated silica microtoroids can be analyzed from a novel viewpoint. Additionally, the techniques can be employed in cavity mode matching methods for the modelling of cavities that strongly scatter light.     

High-intensity near-field generation for silicon nanoparticle arrays with oblique irradiation for large-area high-throughput nanopatterning

We present near-field distributions around an isolated 800-nm silica or silicon nanoparticle, and nanoparticle arrays of 800-nm silica or silicon nanoparticles, on a silicon substrate by the finite-difference time-domain method when 800-nm light is irradiated obliquely to the substrate. Nanopatterning mediated with the nanoparticle system is promising for large-area, high-throughput patterning by using an enhanced localized near-field ablation by the nanoscattered light lens effect. The irradiation area cannot be extended for silica nanoparticles, because the optical field enhancement factor is low. Gold nanoparticles can generate highly enhanced near fields, although at present there are no useful ways to arrange the gold nanoparticles on the substrate at a high throughput. Silicon nanoparticles with high dielectric permittivity have optical characteristics of both silica and gold nanoparticles. The particle arrangement on the Si substrate is technically easy using a wet pulling process. From the calculation, high optical field intensity is acquired with oblique s-polarized irradiation to the substrate under silicon nanoparticle arrays, and the intensity is almost the same as that under gold nanoparticle arrays under the same condition. With this method, high-throughput nanopatterning for a large area would be achievable.     

Sub-microns period grating couplers fabricated by silicon mold

This paper describes a novel simple process suitable for fabrication of micro-periodic structure in optical waveguide. The mold was fabricated using electron beam lithography and fast atom beam etching. Sub-micron-scale patterns were transferred from silicon mold to polymer layer. Grating coupler was fabricated by the mold and normal optical mask. In the proposed method, no press which is needed for imprint lithography is required and the mold structure can be duplicated with high aspect ratio. Experimental coupling efficiency is about 25%. This technique can also be used to fabricate other nanometer-scale structures.