Enhanced power efficiency of ZnO based organic/inorganic solar cells by surface modification

We present series of strategies to enhance efficiency of ZnO nanorods based organic/inorganic solar cells with spin-coated P3HT:PCBM blend as active layer. The performance of the as-fabricated devices is improved by controlling the size of ZnO nanorods, annealing temperature and time of active layer, surface modification of ZnO with PSBTBT. Optimized device of ITO/ZnO nanorod/P3HT:PCBM/Ag device with PSBTBT surface modification and air exposure reaches an efficiency of 2.02% with a short-circuit current density, open-circuit voltage and fill factor of 13.23 mA cm⁻², 0.547 V and 28%, respectively, under AM 1.5 irradiation of 100 mW m⁻², the increase in efficiency is 7-fold of the PSBTBT surface modified ITO/ZnO nanorods/P3HT:PCBM/Ag device compared with the unmodified one, which is own to the increased interface contact, expanded light absorption, tailored band alignment attributed to PSBTBT. We found exposure to air and surface modification is crucial to improve the device performance, and we discussed the mechanisms that affect the performance of the devices in detail.     

An organic electroluminescent device made from a gadolinium complex

A gadolinium ternary complex, tris(1-phenyl-3-methyl-4-isobutyryl-5-pyrazolone) (phenanthroline) gadolinium [Gd(PMIP)₃(Phen)] was synthesized and used as a light emitting material in the organic electroluminescent (EL) devices. The triple layer device with a structure of indium tin oxide (ITO)/N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine (TPD) (20 nm)/Gd(PMIP)₃(Phen) (80 nm)/2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (bathocuproine or BCP) (20 nm)/Mg: Ag(200 nm)/Ag(100 nm) exhibited green emission peaking at 535 nm. A maximum luminance of 230 cd/m² at 17 V and a peak power efficiency of 0.02 lm/w at 9 V were obtained.     

Effect of solvents on the performance and morphology of polymer photovoltaic devices

In the polymer photovoltaic devices (PVDs), the performance of devices was strongly influenced by region-regularity, number average molecular weight and casting solvents of polymers. In this work, we fabricated p–n bulk-hetero-junction PVDs based on poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C₆₀-butyric acid methyl ester (PCBM) using various solvents such as chloroform (CF), chlorobenzene (CB), dichlorobenzene (DCB), and mixed solvent (CF/CB, CF/DCB). Thin film of active layer with P3HT/PCBM was prepared by spin coating and thermal annealing at 150 °C with fixed thickness about 110 nm by adjusting solution concentration. The crystalline morphology and layered phase for the active layer were studied by atomic force microscopy and X-ray diffraction, respectively. We investigated the performance of solar cells according to different morphology and crystallinity of active layer by various solvent and mixed solvent.     

Interface photoluminescence of the SnO2:F/CdS:In/CdTe thin film solar cells prepared partially by the spray pyrolysis technique

CdS/CdTe solar cells were built by depositing a 200 nm layer of SnO₂:F on glass substrates by the spray pyrolysis (SP) technique, a 500 nm CdS:In layer by the same technique and a 1–1.5 μm CdTe layer by vacuum evaporation. The cells were CdCl₂ heat-treated in nitrogen atmosphere for 30 min at 350 °C. The photoluminescence (PL) spectra were measured at the CdS/CdTe interface for two cells with different values of the CdTe layer's thickness at the temperature T=60 K. A deconvolution peak fit was performed from which it is found that the peaks are characteristic of the solid solution CdS_xTe_1?x. The parabolic relation that relates the bandgap energy with the composition was used to estimate x, where x is [S]/([Te]+[S]) and [Te], [S] are the concentrations of Te and S atoms, respectively. The results show that the interface is smooth and the change of the bandgap occurs gradually. The solar cell of the thicker CdTe layer showed more interdiffusion at the CdS/CdTe interface and better photovoltaic characteristics.     

Electrical characteristics and efficiency of organic light-emitting diodes depending on hole-injection layer

In a device structure of ITO/hole-injection layer/N,N′-biphenyl-N,N′-bis-(1-naphenyl)-[1,1′-biphthyl]4,4′-diamine(NPB)/tris(8-hydroxyquinoline)aluminum(Alq₃)/Al, we investigated the effect of the hole-injection layer on the electrical characteristics and external quantum efficiency of organic light-emitting diodes. Thermal evaporation was performed to make a thickness of NPB layer with a rate of 0.5–1.0 Å/s at a base pressure of 5 × 10⁻⁶ Torr. We measured current–voltage characteristics and external quantum efficiency with a thickness variation of the hole-injection layer. CuPc and PVK buffer layers improve the performance of the device in several aspects, such as good mechanical junction, reducing the operating voltage, and energy band adjustment. Compared with devices without a hole-injection layer, we found that the optimal thickness of NPB was 20 nm in the device structure of ITO/NPB/Alq₃/Al. By using a CuPc or PVK buffer layer, the external quantum efficiencies of the devices were improved by 28.9% and 51.3%, respectively.     

Highly efficient and stable organic light-emitting diode by balancing drift current of charge

Highly efficient and stable OLED device in which hole-drift current and electron-drift current are balanced was fabricated. Drift current characteristics according to the thickness of organic layer were examined using the device with ITO/m-MTDATA/NPB/Al structure that can only move the hole and the device with Al/LiF/Alq₃/LiF/Al structure that can only move the electron. Using the result of such examination, green device with balanced drift current was produced. Device with the structure of m-MTDATA (80 nm)/NPB (20 nm)/C-545T (3%) doped Alq₃ (5 nm)/Alq₃ (59 nm)/LiF (1 nm)/Al (200 nm) showed color purity of (0.309, 0.643) and high efficiency of 7.0 lm/W (14.4 cd/A). Most of light emission was observed inside the green emitting layer. Through the result of EL spectrum for the device also including red emitting layer, same result could be obtained. The device with balanced drift current also showed half life-time of 175 h for initial luminance of 3000 cd/m², which is more stable in comparison to the device without balanced drift current.     

Influence of interface modification on the performance of polymer/Bi2S3 nanorods bulk heterojunction solar cells

In this paper, bulk heterojunction photovoltaic devices based on the poly[2-methoxy-5-(3′,7′-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV):Bi₂S₃ nanorods hybrid material were present. To optimize the performance of the devices, the interface modification of the hybrid material that has a significant impact on the exciton dissociation efficiency was studied. An improvement in the device performance was achieved by modifying the Bi₂S₃ surface with a thin dye layer. Moreover, modifying the Bi₂S₃ surface with anthracene-9-carboxylic acid can enhance the performance further. Compared with the solar cells with Bi₂S₃ nanorods hybrid with the MDMO-PPV as the active layer, the anthracene-9-carboxylic acid modified devices are better in performance, with the power conversion efficiency higher by about one order in magnitude.     

Enhancement of optical absorption in amorphous silicon thin film solar cells with periodical nanorods to increase optical path length

In this paper, we demonstrate an amorphous silicon (a-Si) thin film solar cell (TFSC) with a homogeneous layer of a-Si to absorb short wavelength photons and periodical a-Si nanorod structures for light trapping enhancement for longer wavelength photons. In such a design, the total absorption can be greatly improved. The periodicity and duty ratio of the nanorods were optimized to enhance the total optical absorption within 500 nanometer (nm) to 1000 nm in the hybrid TFSC structure. The best overall absorption can be achieved when period of nanorods is about 500 nm. When the duty ratio of nanorods is 0.6, the average absorption can reach 80% which represents an improvement by 40% compared to the conventional thin film a-Si solar cell without nanorod structures.     

Fabrication of PbS thin films composed of highly (200)-oriented nano-/micro-rods in deep eutectic solvent

PbS thin films composed of highly (200)-oriented shuttle-like nano-/micro-rods were successfully fabricated on glass substrates by the environment friendly ionothermal method at 140 °C in deep eutectic solvent (DES). The as-prepared products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), ultraviolet-visible (UV–vis) and photoluminescence (PL) spectra, respectively. The possible mechanism of the oriented growth of PbS nano-/micro-rods was discussed. The PbS thin films composed of shuttle-like nano-/micro-rods exhibited a large absorbance property in the wavelength range of 350–1100 nm, and moreover, the PL spectrum had a broad emission band centered at 490 nm. The shuttle-like PbS nano-/micro-rods-based thin films might have potential application in solar cells.     

Sonochemical synthesis,formation mechanism,and solar cell application of tellurium nanoparticles

Tellurium inherently tends to form 1-D structures and while the 0-D Te nanostructures have better properties and applications in solar cell. In the present study, 0-D Te nanostructures including rice-like and spherical nanoparticles with the particle size of 15–40 nm were successfully synthesized via a facile sonochemical method. In the absence of ultrasonic irradiation nanorods were produced while performing the reaction under ultrasonic waves (at 200 W for 30 min) led to the formation of nanoparticles. Finally, the efficiency of various as-synthesized Te nanostructures in quantum dot-sensitized solar cells (QDSSCs) were evaluated. Using rice-like nanoparticles led to increase in J_SC, V_OC, FF and η parameters from 1.22, 0.54, 0.49 and 0.32% to 1.57, 0.64, 0.63 and 0.63%, respectively, compared with nanorods.     

β-NaYF4:Er3+(10%) microprisms for the enhancement of a-Si:H solar cell near-infrared responses

β-NaYF₄:Er³⁺(10%) microprisms, synthesized using a hydrothermal method, were applied to the back of a thin film hydrogenated amorphous silicon (a-Si:H) solar cells to investigate response to sub-band gap near-infrared irradiation. Currents of 0.3 μA and 0.01 μA were measured during single-illumination with 60 mW (80 mW/cm²) 980 nm and 1560 nm diode lasers, respectively, due to frequency upconversion (UC). Under co-excitation by 60 mW 980 nm and 100 mW 1560 nm lasers, a current improvement to 0.54 μA was obtained, resulting from enhancements in red emission. The finding indicates that co-excitation with multiple wavelengths accessible to UC materials is very effective in enhancing the efficiency of solar cells.     

The effect of Ag layer thickness on the properties of WO3/Ag/MoO3 multilayer films as anode in organic light emitting diodes

Transparent conductive WO₃/Ag/MoO₃ (WAM) multilayer electrodes were fabricated by thermal evaporation and the effects of Ag layer thickness on the optoelectronic and structural properties of multilayer electrode as anode in organic light emitting diodes (OLEDs) were investigated using different analytical methods. For Ag layers with thickness varying between 5 and 20 nm, the best WAM performances, high optical transmittance (81.7%, at around 550 nm), and low electrical sheet resistance (9.75 Ω/cm²) were obtained for 15 nm thickness. Also, the WAM structure with 15 nm of Ag layer thickness has a very smooth surface with an RMS roughness of 0.37 nm, which is suitable for use as transparent conductive anode in OLEDs. The current density?voltage?luminance (J?V?L) characteristics measurement shows that the current density of WAM/PEDOT:PSS/TPD/Alq₃/LiF/Al organic diode increases with the increase in thickness of Ag and WO₃/Ag (15 nm)/MoO₃ device exhibits a higher luminance intensity at lower voltage than ITO/PEDOT:PSS/TPD/Alq₃/LiF/Al control device. Furthermore, this device shows the highest power efficiency (0.31 lm/W) and current efficiency (1.2 cd/A) at the current density of 20 mA/cm², which is improved 58% and 41% compared with those of the ITO-based device, respectively. The lifetime of the WO₃/Ag (15 nm)/MoO₃ device was measured to be 50 h at an initial luminance of 50 cd/m², which is five times longer than 10 h for ITO-based device.     

Photovoltaic properties of black silicon microstructured by femtosecond pulsed laser

Prototype devices based on black silicon have been fabricated by microstructuring 250 μm thick multicrystalline n doped silicon wafers using femtosecond pulsed laser in ambient gas of SF₆ to measure its photovoltaic properties. The enhanced optical absorption of black silicon extends across the visible region and all the black silicons prepared in this work exhibit enhanced optical absorption close to 90% from 300 nm to 800 nm. The highest open-circuit voltage (V_oc) and short-circuit current (I_sc) under the illumination of He–Ne continuous laser at 632.8 nm were measured to be 53.3 mV and 0.11 mA, respectively at a maximum power conversion efficiency of 1.44%. Upon excitation with He–Ne continuous laser at 632.8 nm, external quantum efficiency (EQE) of black silicon as high as 112.9% has also been observed. Development of black silicon for photovoltaic purposes could open up a new perspective in achieving high efficient silicon-based solar cell by means of the enhanced optical absorption in the visible region. The current–voltage characteristic and photo responsivity of these prototype devices fabricated with microstructured silicon were also investigated.     

Hard magnetic properties of rapidly annealed NdFeB thin films on Nb and V buffer layers

NdFeB thin films of the form A (20 nm)/NdFeB(d nm)/A(20 nm), where d ranges from 54 to 540 nm and the buffer layer A is Nb or V were prepared on a Si(1 0 0) substrate by magnetron sputtering. The hard Nd₂Fe₁₄B phase is formed by a 30 s rapid anneal or a 20 min anneal. Average crystallite size ranged from 20 to 35 nm with the rapidly annealed samples having the smaller crystallite size. These samples also exhibited a larger coercivity and energy product than those treated by a 20 min vacuum anneal. A maximum coercivity of 26.3 kOe at room temperature was obtained for a Nb/NdFeB (180 nm)/Nb film after a rapid anneal at 725°C. Initial magnetization curves indicate magnetization rotation rather than nucleation of reverse domains is important in the magnetization process. A Brown's equation analysis of the coercivity as a function of temperature allowed us to compare the rapidly annealed and 20 min annealed samples. This analysis suggests that rapid annealing gives higher quality crystalline grains than the 20 min annealed sample leading to the observed large coercivity in the rapidly annealed samples.     

Using high haze (> 90%) light-trapping film to enhance the efficiency of a-Si:H solar cells

The high haze light-trapping (LT) film offers enhanced scattering of light and is applied to a-Si:H solar cells. UV glue was spin coated on glass, and then the LT pattern was imprinted. Finally, a UV lamp was used to cure the UV glue on the glass. The LT film effectively increased the Haze ratio of glass and decreased the reflectance of a-Si:H solar cells. Therefore, the photon path length was increased to obtain maximum absorption by the absorber layer. High Haze LT film is able to enhance short circuit current density and efficiency of the device, as partial composite film generates broader scattering light, thereby causing shorter wave length light to be absorbed by the P layer so that the short circuit current density decreases. In case of lab-made a-Si:H thin film solar cells with v-shaped LT films, superior optoelectronic performances have been found (V_oc = 0.74 V, J_sc = 15.62 mA/cm², F.F. = 70%, and η = 8.09%). We observed ~ 35% enhancement of the short-circuit current density and ~ 31% enhancement of the conversion efficiency.     

Enhanced performance of bi-layer Nb2O5 coated TiO2 nanoparticles/nanowires composite photoanode in dye-sensitized solar cells

Dye sensitized solar cells (DSSCs) were fabricated based on coumarin NKX-2700 dye sensitized bi-layer photoanode and quasi-solid state electrolyte sandwiched together with cobalt sulfide coated counter electrode. A novel bi-layer photoanode has been prepared using composite mixtures of 90 wt.% TiO₂ nanoparticles + 10 wt.% TiO₂ nanowires (TNPWs) as active layer and Nb₂O₅ is coated on the active layer, which acts as scattering layer. Hafnium oxide (HfO₂) was applied over the TNPWs/Nb₂O₅ photoanode film, as a blocking layer. TiO₂ nanoparticles (TNPs), TiO₂ nanowires (TNWs) and TNPWs/Nb₂O₅ were characterized by X-ray diffractometer (XRD), scanning electron microscope (SEM) and transmission electron microscope (TEM). The sensitizing organic dye coumarin NKX-2700 displayed maximum absorption wavelength (λ_max) at 525 nm, which could be observed from the UV–vis spectrum. DSSC-1 fabricated with composite bi-layer photoanode revealed enhanced photo-current efficiency (PCE) as compared to other DSSCs and illustrated photovoltaic parameters; short-circuit current J_SC = 18 mA/cm², open circuit voltage (V_OC) = 700 mV, fill factor (FF) = 64% and PCE (η) = 8.06%. The electron transport and charge recombination behaviors of DSSCs were investigated by electrochemical impedance spectra (EIS) and the results illustrated that the DSSC-1 showed the lowest charge transport resistance (R_tr) and the longest electron lifetime (τ_eff). Therefore, in the present investigation, it could be concluded that the novel bi-layer photoanode with blocking layer increased the short circuit current, electron transport and suppressed the recombination of charge carriers at the photoanode/dye/electrolyte interface in DSSC-1.     

RGB tricolor produced by white-based top-emitting organic light-emitting diodes with microcavity structure

RGB pixels by microcavity top-emitting organic light-emitting diode (TOLED) is beneficial to both minimizing the loss of light and improving the color purity and the efficiency. Based on the multi-emitting layers, white organic light-emitting diodes (OLEDs) and microcavity TOLEDs were prepared. TOLEDs were fabricated using Ag/ITO as the reflector and adjusting layer, Al/Ag as semi-transparent cathode, Alq:DCJTB/TBADN:TBPe/Alq:C545 as white light emitting layer. By adjusting the thickness of ITO, optical length of cavity and the color of the device have been changed. So we get RGB tricolor devices. The peak wavelengths are 476 nm, 539 nm, 601 nm, Commission Internationale d’Eclairage (CIE) coordinates are (0.133, 0.201), (0.335, 0.567), (0.513, 0.360), FWHM are 32 nm, 50 nm, 73 nm for blue, green and red, respectively.     

Simple one-step ultrasonic synthesis of anatase titania/polypyrrole nanocomposites

In this work, hybrid nanocomposites based on anatase titania:polypyrrole (TiO₂:PPy) were directly obtained from a simple, one-step, ultrasonic (UT)-assisted synthesis. The properties of these crystalline nanocomposites were compared with those of others fabricated using cold (Cold)-assisted synthesis without any UT assistance, which required a hydrothermal treatment (HT) to yield crystalline anatase titania in the nanocomposite (TiO₂:PPy) at low temperature (130 °C) and in a short time (3 h). The SEM results demonstrated that the UT-assisted synthesis is a feasible method to obtain anatase TiO₂:PPy nanocomposites with controlled morphology using low energy. The Fourier transform infrared (FT-IR) bands of the crystalline nanocomposites exhibited a shift with respect to neat components, which was attributed to the strong interaction between the secondary amine groups (N–H) of PPy and the oxygen from TiO₂. The acceptable absorption in the visible region (λ_max = 670 nm) indicates that these nanocomposites are good candidates for harvesting energy in solar cells. Devices based on these nanocomposites were built to evaluate their electrical properties. An increase in the photocurrent was observed for the devices prepared with the nanocomposites from the UT-assisted synthesis.     

Emissive pattern formation by the photoreaction of poly(p-phenylene vinylene)

The vinylene unit of a p-phenylene polymer was photo-oxidized under atmospheric oxygen to provide emittive patterns. Thin films of poly[2-methoxy-5-(3,7-dimethyloctyloxy)-p-phenylene vinylene] (MDMO-PPV) were directly photo-patterned by UV light through a photo-mask having 1 μm-wide lines. The absorption and fluorescence studies on the MDMO-PPV film by UV irradiation indicated that the photo-patterning was mainly originated from the oxidation of the vinylic bonds to give carbonyl (CO) containing polymers. The patterned MDMO-PPV film was applied to an electroluminescent cell, which showed 20 μm-wide luminescent line patterns at applied potential of 5 V.     

Optimization of microcrystalline silicon thin film solar cell isolation processing parameters using ultraviolet laser

This study used ultraviolet laser to perform the microcrystalline silicon thin film solar cell isolation scribing process, and applied the Taguchi method and an L₁₈ orthogonal array to plan the experiment. The isolation scribing materials included ZnO:Al, AZO transparent conductive film with a thickness of 200 nm, microcrystalline silicon thin film at 38% crystallinity and of thickness of 500 nm, and the aluminum back contact layer with a thickness of 300 nm. The main objective was to ensure the success of isolation scribing. After laser scribing isolation, using the minimum scribing line width, the flattest trough bottom, and the minimum processing edge surface bumps as the quality characteristics, this study performed main effect analysis and applied the ANOVA (analysis of variance) theory of the Taguchi method to identify the single quality optimal parameter. It then employed the hierarchical structure of the AHP (analytic hierarchy process) theory to establish the positive contrast matrix. After consistency verification, global weight calculation, and priority sequencing, the optimal multi-attribute parameters were obtained. Finally, the experimental results were verified by a Taguchi confirmation experiment and confidence interval calculation. The minimum scribing line width of AZO (200 nm) was 45.6 μm, the minimum scribing line width of the microcrystalline silicon (at 38% crystallinity) was 50.63 μm and the minimum line width of the aluminum thin film (300 nm) was 30.96 μm. The confirmation experiment results were within the 95% confidence interval, verifying that using ultraviolet laser in the isolation scribing process for microcrystalline silicon thin film solar cell has high reproducibility.