Width and temperature dependence of lithography-induced magnetic anisotropy in (Ga,Mn)As wires

In-plane magnetic anisotropy of 40-μm-long (Ga,Mn)As wires with different widths (0.4, 1.0, and 20 μm) has been investigated between 5 and 75 K by measuring anisotropic magneto-resistance (AMR). The wires show in-plane 〈1 0 0〉 cubic and [−1 1 0] uniaxial anisotropies, and an additional lithography-induced anisotropy along the wire direction in narrow wires with width of 0.4 and 1.0 μm. We derive the temperature dependence of the cubic, uniaxial, and lithography-induced anisotropy constants from the results of AMR, and find that a sizable anisotropy can be provided by lithographic means, which allows us to control and detect the magnetization reversal process by choosing the direction of the external magnetic fields.     

Effect of length on the magnetic properties of Ni 300 nm wide nanowires

The Ni 300 nm wide nanowires were fabricated inside the as-synthesized nanochannels of anodic aluminum oxide (AAO) template by electrochemical deposition method. The angular dependence of coercivity and remanence of Ni nanowire arrays with various lengths have been comparatively studied. Investigation results demonstrate that the easy axis is along the wire axis for the longer nanowires of 4 μm or 9 μm in length due to their large shape anisotropy. However, the magnetostatic coupling is dominant for the shorter nanowires of 0.9 μm in length resulting in the change of magnetization behaviors, including coercivity and easy axis. A further explanation was also given by simple calculation in the paper.     

High-frequency magnetoresonance absorption in amorphous magnetic microwires

The Fe₆₉Si₁₆B₁₀C₅, Co₇₅Si₁₀B₁₅, Co₆₈Mn₇Si₁₀B₁₅ amorphous microwires have been studied by the magnetoresonance absorption technique in the X (9.5 GHz), K (20–27 GHz) and Q (30–37 GHz) frequency bands. The specimens under study were metal threads of about 5 μm in diameter coated with dielectric Pyrex layer with thickness 5 μm. The dependences of magnetic resonance spectra on frequency and wire orientation have been measured. The analysis of the resonance signal parameters has revealed that well-known classical equations for FMR in a cylindrical-shaped sample could not be applied for these microwires. It is shown that due to the skin depth effect the model of hollow cylindrical tube has to be applied to explain the experimental results in the frequency range measured. The values of saturation magnetization, g-factor and anisotropy field have been estimated from the frequency dependence of the field for resonance.     

Magnetically actuated bi-directional microactuators with permalloy and Fe/Pt hard magnet

Bi-directional polyimide (PI) electromagnetic microactuator with different geometries are designed, fabricated and tested. Fabrication of the electromagnetic microactuator consists of 10 μm thick Ni/Fe (80/20) permalloy deposition on the PI diaphragm by electroplating, high aspect ratio electroplating of copper planar coil with 10 μm in thickness, bulk micromachining, and excimer laser selective ablation. They were fabricated by a novel concept avoiding the etching selectivity and residual stress problems during wafer etching. A mathematical model is created by ANSYS software to analyze the microactuator. The external magnetic field intensity (H_ext) generated by the planar coil is simulated by ANSYS software. ANSYS software is used to predict the deflection angle of the microactuator. Besides, to provide bi-directional and large deflection angle of microactuator, hard magnet Fe/Pt is deposited at a low temperature of 300 °C by sputtering onto the PI diaphragm to produce a perpendicular magnetic anisotropic field. This magnetic field can enhance the interaction with H_ext to induce attractive and repulsive bi-directional force to provide large displacement. The results of magnetic microactuator with and without hard magnets are compared and discussed. The preliminary result reveals that the electromagnetic microactuator with hard magnet shows a greater deflection angle than that without one.     

Observation of ferromagnetism and anomalous Hall effect in laser-deposited chromium-doped indium tin oxide films

We report on the structural, magnetic, and magnetotransport characteristics of Cr-doped indium tin oxide (ITO) films grown on SiO₂/Si substrates by pulsed laser deposition. Structural analysis clearly indicates that homogeneous films of bixbyite structure are grown without any detectable formation of secondary phases up to 20 mol% Cr doping. The carrier concentration is found to decrease with Cr ion addition, displaying a change in the conduction type from n-type to p-type around 15 mol% Cr doping. Room temperature ferromagnetism is observed, with saturation magnetization of ∼0.7 emu/cm³, remnant magnetization of ∼0.2 emu/cm³ and coercive field of ∼30 Oe for 5 mol% Cr-doped ITO. Magnetotransport measurements reveal the unique feature of diluted magnetic semiconductors, in particular, an anomalous Hall effect governed by electron doping, which indicates the intrinsic nature of ferromagnetism in Cr-doped ITO. These results suggest that Cr-doped ITO could be promising for semiconductor spin electronics devices.     

Transition of magnetic anisotropy in Ni/GaAs (0 0 1) observed by magnetization and ferromagnetic resonance

Polycrystalline thin Ni films deposited onto GaAs (0 0 1) show a transition of the magnetic anisotropy depending on its thickness. The anisotropy is perpendicular to the film plane for the thicknesses of the film ⩽12 nm. This becomes in-plane in the films having thicknesses ⩾15 nm. The films are deposited onto the n-type GaAs (0 0 1) substrate by the usual thermal evaporation method and also by the electron beam evaporation in ultra high vacuum onto a GaAs epilayer in the standard molecular beam epitaxy system. The magnetization and ferromagnetic resonance (FMR) are observed in the temperature range from 4.2 to 300 K. For the discussion of the microscopic origin of the anomalous properties in magnetization and FMR experiments, the experimental results are reviewed by introducing a uniaxial anisotropy, which is calculated from the easy-axis and hard-axis magnetization data. This calculated anisotropy is able to explain the temperature and angle dependency of the FMR spectra of the Ni films. Hence the magnetization and FMR spectra are in agreement with the type of the anisotropy and its temperature dependency. In addition to these, the temperature dependence of the in-plane magnetic anisotropy is able to explain the previously reported anomalous effect of reducing the squareness at low temperatures in Ni/GaAs.     

Large spontaneous Hall angle in [Co,CoFe/Pt] multilayer

We have quantitatively investigated the Hall effect in [Co, CoFe/Pt] multilayer films. The [Co, CoFe/Pt] multilayers exhibit large spontaneous Hall resistivity (ρ_H) and Hall angle (ρ_H/ρ). Even though the Hall resistivity in [Co, CoFe/Pt] multilayer films (2.7–4 × 10⁻⁷ Ω cm) is smaller than that of amorphous RE–TM alloy films which show large spontaneous Hall resistivity (<2 × 10⁻⁶ Ω cm), the Hall angle of multilayer (6–8%) is almost twice than that in amorphous rare earth–transition metal alloy films (∼3%). The Hall angle provides evidence of the effects of the exchange interaction of the Hall scattering. The exchange is between conduction electron spins and the localized spins of the transition metal. The large Hall angle of [Co, CoFe/Pt] multilayer can be considered due to the high spin polarization and high Curie temperature of Co and CoFe transition metal layers. Even though the role of interfaces and surfaces in the magnetic properties of multilayer films may dominate that of the bulk, the Hall effects in [Co, CoFe/Pt] multilayer may be mainly dominated by the bulk effect.     

Size effects on characteristic magnetic fields of a spin-valve multilayer by computer simulation

The change in characteristic magnetic fields of a spin-valve multilayer is investigated as a function of the size by computer simulation. The spin-valve modeled in this work is IrMn (9 nm)/CoFe (4 nm)/Cu (2.6 nm)/CoFe (2 nm)/NiFe (6 nm). The spin-valve dimensions are varied widely from 20 mm×10 mm to 0.5 μm×0.25 μm, but the aspect ratio defined by the ratio of the length to the width is fixed at 2.0. The magnetostatic interactions begin to affect the magnetic properties substantially at a spin-valve length of 5 μm, and, at a length of 1 μm, they become even more dominant. The main consequences of the magnetostatic interactions are a significant increase of the coercivity and a very large shift of the bias field in both the pinned and free layers. It is shown that these changes can be explained by two separate contributions to the total magnetostatic interactions: the coercivity change by the self-demagnetizing field and the change of the bias field by the interlayer magnetostatic interaction field.     

Electro-optic metal–insulator–semiconductor–insulator–metal Mach-Zehnder plasmonic modulator

The performance of a CMOS-compatible electro-optic Mach-Zehnder plasmonic modulator is investigated using electromagnetic and carrier transport simulations. Each arm of the Mach-Zehnder device comprises a metal–insulator–semiconductor–insulator–metal (MISIM) structure on a buried oxide substrate. Quantum mechanical effects at the oxide/semiconductor interfaces were considered in the calculation of electron density profiles across the structure, in order to determine the refractive index distribution and its dependence on applied bias. This information was used in finite element simulations of the electromagnetic modes within the MISIM structure in order to determine the Mach-Zehnder arm lengths required to achieve destructive interference and the corresponding propagation loss incurred by the device. Both inversion and accumulation mode devices were investigated, and the layer thicknesses and height were adjusted to optimise the device performance. A device loss of <8 dB is predicted for a MISIM structure with a 25 nm thick silicon layer, for which the device length is <3 μm, and <5 dB loss is predicted for the limiting case of a 5 nm thick silicon layer in a 1.2 μm long device: in both cases, the maximum operating voltage is 7.5 V.     

Magnetization anisotropy of the Tm- and Fe-subsystems in Tm2Fe17

Magnetic and neutron diffraction measurements were carried out in order to study the spontaneous and induced spin-reorientation (SR) transition of the “easy axis–easy plane” type in the poly and single-crystalline samples of the hexagonal Tm₂Fe₁₇. We have determined the temperature dependence of the lattice parameters and the angle between the c-axis and the magnetic moment of the Tm-subsystem. We also find that the SR transition is accompanied by a large (about 20%) magnetization change of the Tm subsystem. In order to induce such a SR transition with the external magnetic field, μ₀H_cr=5 T is necessary to be applied along the hard-magnetization direction (the a-axis) at 4.2 K. The H_cr value decreases with an increasing temperature. The magnetization measurements demonstrate that at 10 K the saturation magnetization along the easy-magnetization direction (the c-axis) is smaller than that along the hard-magnetization direction. Based on this observation, we believe that Fe-subsystem of Tm₂Fe₁₇ is likely to have magnetization anisotropy.     

Uniaxial pressure effect on magnetic susceptibility of perovskite manganite La0.66Ba0.34MnO3

Magnetization of La_0.66Ba_0.34MnO₃ and its temperature behavior under a uniaxial pressure of 0.1 kbar are measured between 5 and 270 K in magnetic fields 0<H<120 Oe. The magnetization represents nearly linear dependence on an external magnetic field. Temperature dependence of the magnetic susceptibility found represents a plateau, that is considered as an evidence of the formation of a long period magnetic structure (probably a sort of helix) below the Curie point. Pressure derivative of magnetization displays a sharp minimum at 200 K, pointing to an instability of electronic structure of the compound near this temperature.     

The magnetization processes,spin reorientation transitions and magnetic domain structure in DyFe10CoTi single crystal

The tetragonal ThMn₁₂-type, single crystalline DyFe₁₀CoTi sample has been investigated by torque and magnetization measurements and observation of domain structure at various temperatures between 10–300 K and in magnetic field from B=0 to 0.15 T. These examinations showed that the magnetic structure of DyFe₁₀CoTi changes from “easy axis” (c-axis) type to conical at 225 K and to “easy plane” (ab plane) type at 100 K.     

Marine environment compatible antireflection coating with nanotop layer on silicon optics

Antireflection coating on silicon optics have crucial importance in thermal device working in 3.6–4.9 μm wavelength region. When the thermal device is used in marine environment, the optics face harsh saline weather condition compared to normal field environment. This deteriorates coated optics and to improve mechanical strength of the coating, a nanotop layer on the antireflection coating has been developed. In this paper a study has been carried out to improve marine environment compatibility by employing a nanolayer on the top of antireflection coating on silicon optics. Optimac synthesis method was used to design the multilayer stack on the substrate with germanium and IR-F625 as high/low refractive index respectively and the layer number was restricted to four layers. The top nanolayer was 60 ± 2 nm thick hafnium dioxide layer developed with ion assisted deposition (End–Hall) on the optics during coating process. The deposition of multilayer coating was carried out inside the coating plant fitted with cryo pump and residual gas analyzer. The evaporation was carried out at high vacuum (2–6 × 10⁻⁶ mbar) using electron beam gun and layer thicknesses were measured with crystal monitor. The average transmission achieved was 97% in the spectral band of 3.6–4.9 μm with a hardness of 9.7 GPa on the coated optics.     

Bending effects and temperature dependence of magnetic properties in a Fe-rich amorphous wire

Amorphous wires with composition Fe_77.5Si_7.5B₁₅ exhibit a very peculiar magnetization process characterized by a single and quite large Barkhausen jump. This gives rise to a squared hysteresis loop at a critical magnetic field. The bistable behaviour, widely studied in wires with typical length of 10 cm and diameter of 125 μm, appears above a length of about 7 cm in straight wires and disappears for curvature radius within the range 2–12 cm in bent wires. In this work it is shown that bistability occurs in bent wires, whatever their curvature is, provided the wires are long enough. To this purpose spiral-shaped samples with several turns are considered. However, when the wire length is not a integer number of turns the magnetization reverses through many large Barkhausen jumps. In this condition, varying the measuring temperature can activate the energy barriers for the jumps.     

Mid-wavelength type II InAs/GaSb superlattice infrared focal plane arrays

We have demonstrated 384 × 288 pixels mid-wavelength infrared focal plane arrays (FPA) using type II InAs/GaSb superlattice (T2SL) photodetectors with pitch of 25 μm. Two p-i-n T2SL samples were grown by molecular beam epitaxy with both GaAs-like and InSb-like interface. The diode chips were realized by pixel isolation with both dry etching and wet etching method, and passivation with SiN_x layer. The device one with 50% cutoff wavelength of 4.1 μm shows NETD ∼ 18 mK from 77 K to 100 K. The NETD of the other device with 50% cutoff wavelength at 5.6 μm is 10 mK at 77 K. Finally, the T2SL FPA shows high quality imaging capability at the temperature ranging from 80 K to 100 K which demonstrates the devices’ good temperature performance.     

Effect of grating on IR LED device performance

The electroluminescence in the range of 3–4.5 μm and 6–10 μm from a Sb-based type II interband quantum cascade structure is reported. We measured the light emission from the top surface of the LED device with different grating structures. We used different etch depths for the grating formation. The light–current–voltage (LIV) characteristics measured at both room and cryogenic temperatures show that the device with 45° angle grating and 1.0 μm deep etch onto the GaSb surface has the highest emission power.     

Hall anomaly in CNT-doped Y-123 high temperature superconductor

In order to study the Hall effect in pure and CNT-doped Y-123 polycrystalline samples, we have measured the longitudinal and transverse voltages at different magnetic field (0 ? 9 T) in the normal and vortex states. In the normal state, the Hall coefficient is positive and decreases with increasing temperature, and can be approximately fitted to R_H = a + bT^?1. We have found a sign reversal in the pure sample for the magnetic field of about 3 T, and double sign reversal of the Hall coefficient in the 0.7 wt% CNT-doped sample at about 3 and 5 T. The Hall resistivity in our samples depends on the pinning.     

A thin film magnetic field sensor of sub-pT resolution and magnetocardiogram (MCG) measurement at room temperature

We developed a very sensitive high-frequency carrier-type thin film sensor with a sub-pT resolution using a transmission line. The sensor element consists of Cu conductor with a meander pattern (20 mm in length, 0.8 mm in width, and 18 μm in thickness), a ground plane, and amorphous CoNbZr film (4 μm in thickness). The amplitude modulation technique was employed to enhance the magnetic field resolution for measurement of the high-frequency field (499 kHz), a resolution of 7.10×10^?13 T/Hz^1/2 being achieved, when we applied an AC magnetic field at 499 kHz. The phase detection technique was applied for measurement of the low frequency field (around 1 Hz). A small phase change was detected using a dual mixer time difference method. A high phase change of 130°/Oe was observed. A magnetic field resolution of 1.35×10^?12 T/Hz^1/2 was obtained when a small AC field at 1 Hz was applied. We applied the sensor for magnetocardiogram (MCG) measurement using the phase detection technique. We succeeded in measuring the MCG signal including typical QRS and T waves, and compared the MCG with a simultaneously obtained conventional electrocardiogram (ECG) signal.     

Magnetic volcanos in gadolinium Langmuir–Blodgett films

Magnetic, structural and electronic properties of Langmuir–Blodgett films with incorporated Gd³⁺ ions has been detected using a scanning DC SQUID microscope, scanning electron microscope and X-ray diffraction. The magnetic images of 28 and 50 layer thick films at 77 K have been obtained after in-plane and out-of-plane pre-magnetization in a field of 1.4 T at 300 K. Randomly placed “magnetic volcanos” with a remanent magnetic moment of the order of 10⁻¹³ A m² was observed. A decay of the remanent magnetization with a characteristic time of about 120 h was observed. It is suggested that the magnetic order is relatively long ranged, and that topological defects (vortices) lead to the observed out-of-plane field lines, and are responsible for the magnetic volcanos. Finally, it is hypothesized that a similar topology of field lines is responsible for superconductivity as observed in ceramic high-T_C superconductors.     

Growth of Sr2CrReO6 epitaxial thin films by pulsed laser deposition

We report the growth, structural, magnetic, and electrical transport properties of epitaxial Sr₂CrReO₆ thin films. We have succeeded in depositing films with a high crystallinity and a relatively large cationic order in a narrow window of growth parameters. The epitaxy relationship is Sr₂CrReO₆ (SCRO) (0 0 1) [1 0 0]∥SrTiO₃ (STO) (0 0 1) [1 1 0] as determined by high-resolution X-ray diffraction and scanning transmission electron microscopy (STEM). Typical values of saturation magnetization of M_S (300 K)=1 μ_B/f.u. and ρ (300 K)=2.8 mΩ cm have been obtained in good agreement with previous published results in sputtered epitaxial thin films. We estimate that the antisite defects concentration in our thin films is of the order of 14%, and the measured Curie temperature is T_C=481(2) K. We believe these materials be of interest as electrodes in spintronic devices.