The band alignment at CdS/Cu2ZnSnSe4 heterojunction interface

Band alignment at CdS/Cu₂ZnSnSe₄ heterojunction interface is studied by X‐ray photoemission spectroscopy. The Cu₂ZnSnSe₄ thin films are prepared by selenization of electrodeposited Cu‐Zn‐Sn precursors. CdS overlayers with different thickness are sequentially grown on the Cu₂ZnSnSe₄ substrate by pulsed laser deposition process. Photoemission spectra are obtained before and after each growth to study the conduction and valence band offsets at the heterojunction interface. The determined conduction band offset of 0.34 eV indicates a spike‐like ‘type I’ band alignment at CdS/Cu₂ZnSnSe₄ interface. The spike will avoid interface recombination, and it is low enough that electron could transfer from the Cu₂ZnSnSe₄ layer to the buffer layer which is suitable for solar cell's fabrication. Copyright © 2012 John Wiley & Sons, Ltd.     

Reaction pathway to Cu2ZnSnSe4 formation in CdI2

Journal of Thermal Analysis and Calorimetry - We investigated various possible chemical interactions between individual precursor compounds (ZnSe, SnSe, and CuSe) and CdI2 as a flux material used...     

Template-directed synthesis of ordered single-crystalline nanowires arrays of Cu2ZnSnS4 and Cu2ZnSnSe4

Highly ordered quaternary semiconductor Cu(2)ZnSnS(4) nanowires array have been prepared via a facile solvothermal approach using anodic aluminum oxide (AAO) as a hard template. The as-prepared nanowires are uniform and single crystalline. They grow along either the crystalline [110] or [111] direction. The structure, morphology, composition, and optical absorption properties of the as-prepared Cu(2)ZnSnS(4) samples were characterized using X-ray powder diffraction, transmission electron microscopy, energy dispersive X-ray spectrometry, scanning electron microscopy, and UV-vis spectrometry. A possible formation mechanism of the nanowire arrays is proposed. Governed by similar mechanism, we show that Cu(2)ZnSnSe(4) nanowire array with similar structural characteristics can also be obtained.     

A low-temperature X-ray diffraction study of the Cu2ZnSnSe4 thin films

Low-temperature XRD measurements were performed to confirm the phase composition and structural parameters of the electrochemically deposited Cu₂ZnSnSe₄ thin films on flexible metal substrates.     

Cu2ZnSnSe4 formation and reaction enthalpies in molten NaI starting from binary chalcogenides

The present study deals with chemical reactions and enthalpies during the synthesis of Cu₂ZnSnSe₄ (CZTSe) from CuSe, SnSe, and ZnSe in molten NaI as flux material in closed degassed ampoules. Differential thermal analysis (DTA) at heating rates 5 °C min^?1 and cooling rates 10 °C min^?1 were used for the determination of temperatures of phase transitions and/or chemical reactions. XRD and Raman analyses confirmed that the formation of CZTSe starts already at 380 °C after the melting of Se that deliberates from the transformation of CuSe to Cu_1.8Se, and the CZTSe formation process impedes to a great extent due to the presence of solid NaI. After the melting of NaI, the formation of CZTSe is completed. For the determination of enthalpy values, the calibration with pure NaI was performed. The thermal effects and enthalpies were compared with the available known thermodynamical values. The specific enthalpy of exothermic Cu₂ZnSnSe₄ formation at 661 °C in NaI ?36 ± 3 kJ mol^?1 was determined experimentally for the first time. Ternary compound Na₂SnSe₃ was formed during the synthesis process. NaI·2H₂O, if present in NaI, was found to be a critical issue in the synthesis process of CZTSe monograin powders in molten NaI—it gave rise to the formation of oxygen-containing by-products Na₂SeO₄ and Na₂Cu(OH)₄. The complete dehydration of NaI·2H₂O at T ≤ 70 °C in vacuum is necessary to avoid the formation of oxygen-containing compounds.     

The optical influence of Na on Cu2ZnSnSe4 films deposited with Na-containing sol–gel precursor

A novel Na-containing precursor solution is presented to investigate the sodium influences on Cu₂ZnSnSe₄ (CZTSe) absorbers grown on Na-free substrates. With higher sodium incorporation, some delicate change in secondary phase Cu₂SnSe₃ was detected and its influence on the surface valence states was given by X-ray photoelectron spectroscopy analyses. It is found that the band gap significantly increased with nominal addition of Na, while the impurity introduced by excess incorporation would restrain further broadening. This method may probably assist to form a suitable CZTSe film directly on flexible substrates other than soda-lime glass.     

ZnSe Etching of Zn‐Rich Cu2ZnSnSe4: An Oxidation Route for Improved Solar‐Cell Efficiency

Cu₂ZnSnSe₄ kesterite compounds are some of the most promising materials for low‐cost thin‐film photovoltaics. However, the synthesis of absorbers for high‐performing devices is still a complex issue. So far, the best devices rely on absorbers grown in a Zn‐rich and Cu‐poor environment. These off‐stoichiometric conditions favor the presence of a ZnSe secondary phase, which has been proved to be highly detrimental for device performance. Therefore, an effective method for the selective removal of this phase is important. Previous attempts to remove this phase by using acidic etching or highly toxic organic compounds have been reported but so far with moderate impact on device performance. Herein, a new oxidizing route to ensure efficient removal of ZnSe is presented based on treatment with a mixture of an oxidizing agent and a mineral acid followed by treatment in an aqueous Na₂S solution. Three different oxidizing agents were tested: H₂O₂, KMnO₄, and K₂Cr₂O₇, combined with different concentrations of H₂SO₄. With all of these agents Se^2? from the ZnSe surface phase is selectively oxidized to Se⁰, forming an elemental Se phase, which is removed with the subsequent etching in Na₂S. Using KMnO₄ in a H₂SO₄‐based medium, a large improvement on the conversion efficiency of the devices is observed, related to an improvement of all the optoelectronic parameters of the cells. Improvement of short‐circuit current density (J_sc) and series resistance is directly related to the selective etching of the ZnSe surface phase, which has a demonstrated current‐blocking effect. In addition, a significant improvement of open‐circuit voltage (V_oc), shunt resistance (R_sh), and fill factor (FF) are attributed to a passivation effect of the kesterite absorber surface resulting from the chemical processes, an effect that likely leads to a reduction of nonradiative‐recombination states density and a subsequent improvement of the p–n junction.     

1D/2D TiO2/ZnIn2S4S型异质结光催化剂及其高效制氢性能

通过半导体催化剂利用太阳能分解水制氢被认为是解决人类面临的环境问题和能源危机的有效途径.在众多的半导体光催化剂中,TiO₂由于其良好的光化学稳定性、无毒性、丰富的形貌以及低廉的价格,在光催化制氢领域备受关注.然而TiO₂的内在缺陷,如较宽的带隙、较窄的光响应范围,光生电子空穴对的快速复合,极大限制了其太阳能制氢效率.构建异质结结构被认为是解决以上问题的一个有效方法,通过将TiO₂与另一个半导体复合可以提升催化剂对太阳光的吸收范围,也可降低光生电子空穴对的复合速率.但构建一个成功的异质结结构不仅要满足上述的要求,还需要保留异质结催化剂体系中光生电子和空穴的氧化还原能力.研究表明,S型异质结是将两个具有合适能带结构的半导体进行耦合,由于费米能级的差异,两个半导体间将发生电子转移,从而引起能带弯曲并形成内建电场.光照条件下,具有较弱还原能力的光生电子在内建电场和能带弯曲的作用下与较弱氧化能力的光生空穴复合,实现异质结催化剂体系中各个半导体内部光生载流子有效分离的目标,同时保留了异质结催化剂体系中较强氧化能力和较强还原能力的光生电子和空穴,进而实现光催化活性的提高.本文采用水热合成方法,将具有更强还原能力和可见光响应特性的半导体(ZnIn₂S₄)原位生长在TiO₂纳米纤维表面,构建了1D/2DTiO₂/ZnIn₂S₄S型异质结光催化剂.最优比例的TiO₂/ZnIn₂S₄复合材料表现出优越的光催化制氢活性(6.03mmol/h/g),分别是纯TiO₂和纯ZnIn₂S₄制氢活性的3.7倍和2倍.TiO₂/ZnIn₂S₄复合材料光催化活性的提高可以归因于紧密的异质结界面、光生载流子的有效分离、丰富的反应活性位点以及增强的光吸收能力.通过原位XPS和DFT计算研究了异质结内部光生电子的转移机制.结果表明,在光照条件下电子由TiO₂向ZnIn₂S₄迁移,遵循了S型异质结内部电子的转移机制,实现了TiO₂和ZnIn₂S₄内部光生载流子的有效分离,同时保留了具有较强还原能力的ZnIn₂S₄价带电子和较强氧化能力的TiO₂导带空穴,从而显著提升光催化制氢效率.综上,本文制备的TiO₂/ZnIn₂S₄S型异质结光催化剂很好地克服了TiO₂在光催化制氢领域所面临的诸多障碍,为设计和制备高效异质结光催化剂提供了新的思路.     

在FTO导电玻璃上电化学沉积高效可见光光电化学分解水Cu2O/g-C3N4异质结膜

近几十年来,光电化学分解水制氢作为一种洁净的、能持续利用太阳能的技术受到极大关注.在众多光催化材料中,p型半导体氧化亚铜(Cu2O)被认为是最有前途的可见光光电分解水材料之一.理论上,它的光能转换为氢能的效率可达到18.7%.然而,目前所报道的Cu2O光转换效率远远低于此值;同时,纯Cu2O在光照条件下的稳定性较差.研究表明,Cu2O与其它半导体复合可以增强其光电转换效率和提高稳定性.如Cu2O和能带匹配的石墨相氮化碳(g-C3N4)复合后,光催化性能和稳定性都有较大提高.但目前所报道的Cu2O/g-C3N4复合物几乎都是粉末状催化剂,不便于回收和重复使用.本文首先采用电化学方法在FTO导电玻璃上沉积Cu2O薄膜,采用溶胶凝胶法制备g-C3N4纳米颗粒材料,然后采用电化学法在Cu2O薄膜表面沉积一层g-C3N4纳米颗粒,得到了Cu2O/g-C3N4异质结膜.分别利用X射线粉末衍射(XRD)、高分辨透射电子显微镜(HRTEM)、扫描电子显微镜(SEM)、紫外可见光谱(UV-Vis)和光电化学分解水实验分析了Cu2O/g-C3N4异质结的组成结构、表面形貌、光吸收性能及催化剂活性和稳定性.XRD和HRTEM表征显示,本文成功合成了Cu2O/g-C3N4异质结材料,SEM图表明g-C3N4纳米颗粒在Cu2O表面分布均匀,大小均一.可见光光电化学分解水结果显示,异质结薄膜的光电化学性能比纯的Cu2O和g-C3N4薄膜材料有极大提高.当在Cu2O表面沉积g-C3N4的时间为15 s时,得到样品Cu2O/g-C3N4-15异质结膜,其在–0.4 V和可见光照射条件下,光电流密度达到了–1.38 mA/cm2,分别是纯Cu2O和g-C3N4薄膜材料的19.7和6.3倍.产氢速率也达到了0.48 mL h–1 cm–2,且产氢和产氧的速率之比约为2,说明此异质结材料在可见光作用下能全分解水.经过三次循环实验,光电化学分解水的效率仅降低10.8%,表明该材料具有良好的稳定性.根据UV-Vis表征和光电化学性能对比,Cu2O/g-C3N4-15的光电性能最好,但其光吸收性能并不是最好,说明光电化学性能与光吸收不是成正比关系,主要是由于Cu2O和g-C3N4两个半导体相互起到了协同作用.机理分析表明,Cu2O/g-C3N4异质结薄膜在光照下,由于两者能带匹配,Cu2O的光生电子从其导带转移到g-C3N4的导带上,g-C3N4价带上的空隙转移到Cu2O的价带上,从而降低了光生电子和空隙的复合,提高了其光催化性能.由于g-C3N4的导带位置高于H2O(或H+)还原为H2的电势,Cu2O的价带位置低于H2O(或OH–)还原为O2的电势,所以在外加–0.4 V偏压和可见光照射条件下,Cu2O/g-C3N4能全分解水,光生载流子越多,光电化学分解水的速率越大.综上所述,在Cu2O薄膜上沉积g-C3N4后得到的异质结薄膜具有高效的光能转换为氢能性能.     

Facile preparation of MgAl2O4/CeO2/Mn3O4 heterojunction photocatalyst and enhanced photocatalytic activity

Novel Mn₃O₄-promoted double p?n junction MgAl₂O₄/CeO₂/Mn₃O₄ heterojunction photocatalyst was constructed by one-step synthesis method and two-step synthesis method. The X-ray powder diffraction, Fourier transform infrared spectrum, X-ray photoelectron spectroscopy, optical and photoluminescence demonstrated that the MgAl₂O₄/CeO₂/Mn₃O₄ heterojunction photocatalyst was synthesized by the two-step synthesis method comprehends a high crystallinity, charge carrier migration and separation efficiency, and relatively low optical absorption coefficient. The MgAl₂O₄/CeO₂/Mn₃O₄ heterojunction photocatalysts were efficiently used as simulated sunlight-driven n-n and p-n double junction photocatalyst for the simultaneous degradation of methylene blue (MB) dye. The continuous double p?n junction MgAl₂O₄/CeO₂/Mn₃O₄ heterojunctions strengthened the function of single n-n or p-n junction and guided the charge carrier migration and separation direction; thus, the oxidation and reduction reactions occur at the active site of spatial separation and prevent the recombination of electrons and holes. The results suggest that the continuous double p?n junction MgAl₂O₄/CeO₂/Mn₃O₄ heterojunctions are very promising candidate material for enhancing the photocatalytic activity in the photocatalytic degradation of MB dye.     

NiFe2O4/g-C3N4 heterojunction composite with enhanced visible-light photocatalytic activity

Spinel structure nickel ferrite (NiFe₂O₄) doped graphitic carbon nitride (g-C₃N₄) photocatalyst NiFe₂O₄/g-C₃N₄ was synthesized by the coprecipitation route to enhance the photocatalytic activity for the visible-light driven degradation of methyl orange. The NiFe₂O₄ doping content is responsible for the microstructure and photocatalytic activity of NiFe₂O₄/g-C₃N₄ samples. Compared with pure NiFe₂O₄ and g-C₃N₄, the 2-NiFe₂O₄/g-C₃N₄ composite with NiFe₂O₄ doping of 2.0 wt% exhibited excellent photocatalytic activity and superior stability after five runs for degrading methyl orange under visible light irradiation. The catalytic activity of 2-NiFe₂O₄/g-C₃N₄ sample produced using the coprecipitation route was higher than those of conventional 2-NiFe₂O₄/g-C₃N₄ bulks prepared by the impregnation approach. The prepared samples for the photocatalytic degradation of methyl orange followed pseudo-first-order reaction kinetics. It’s ascribed to the synergistic effect between NiFe₂O₄ and g-C₃N₄, which can inhibit the recombination of photoexcited electron-hole pairs, accelerate photoproduced charges separation, and enhance the visible light absorption.     

ChemInform Abstract: Pseudopotential Investigations on the Molecules Cu2Si2, Cu2Sn2, Cu4Si4, and Cu4Sn4

show the equilibrium structures to be the butterfly arrangement for the Cu₂X₂ clusters and the heterocubane arrangement for the Cu₄X₄ clusters.     

Detection of acetaminophen using cyclic voltammetry on MnFe2O4/polyaniline

A novel sensing material, MnFe₂O₄/polyaniline (PANI), was fabricated by doping PANI to MnFe₂O₄ on a modified glassy carbon electrode (GCE). This sensing material was characterized using X‐ray diffraction (XRD), scanning electron microscopy (SEM), and high‐resolution transmission electron microscopy (HR‐TEM). Using a cyclic voltammetry electrochemical‐sensing method, we tested MnFe₂O₄/PANI, and an acetaminophen concentration of 0.0625–5 mM was recorded. Furthermore, the sensor responses were 2.05–22.44. The detection limit was 2.23 × 10^?7 M. Strong selectivity was observed for MnFe₂O₄/PANI, which is a possible sensing mechanism.     

YBa2Cu4O8/La2/3Ca1/3MnO3/YBa2Cu4O8异质结中的超导转变温度

采用对靶溅射技术制备了YBa2Cu4O8/La2/3Ca1/3MnO3/YBa2Cu4O8（Y-124/LCMO/Y-124）异质结, 研究了超导转变温度（TC）随LCMO层厚度（dL）的振荡行为. 当dL＞dLCR时, TC-dL曲线表现出清晰的非单调行为, 而金属-绝缘体转变温度（TMI）仅当dL＞dLCR时才能观测到. Y-124/LCMO/Y-124系统中所存在的这种对中间层的依赖关系, 显示了铁磁和超导耦合间强烈的相互作用.     

p-n型异质结催化剂Ag2O-BiVO4对微囊藻毒素(MC-RR)的光化学氧化机理研究

微囊藻毒素(MC-RR)是一种具有两个精氨酸结构的微囊藻毒素,它是由蓝藻细菌产生的一种能普遍被检测到的细胞毒素,近来由于其潜在的肝毒性受关注.在可见光(λ≥420 nm)照射条件下,以MC-RR为光催化降解污染物,对BiVO4,Ag-BiVO4,Ag2O-BiVO4和Ag/Ag2O-BiVO4光催化降解性能进行了比较研究.通过HPLC-MS测定了其中间产物,并分析了其可能的降解途径.结果表明,Ag的存在通过构筑p-n异质结光催化剂而提高了Ag/Ag2O-BiVO4的光催化效率.此外,Ag0的存在极大地促进了MC-RR在光催化剂表面上的吸附作用.小鼠的毒理学实验表明,MC-RR经过光催化降解后毒性显着降低.由于水体富营养化形成的蓝绿藻促进微囊藻毒素的形成,这已成为全球关注的问题.被微囊藻毒素污染的饮用水除了会毒害野生动物,家畜和家禽外,还会损害人类肝脏,这也是肝癌的发病率高的原因.毒理学研究发现,微囊藻毒素通过结合到1A(PP1)和2A(PP2)上强烈地抑制蛋白磷酸酶的活性,从而导致肝细胞的损伤,引发原发性肿瘤.目前对光催化降解MC-RR的研究主要集中在紫外光催化氧化领域.采用太阳光中的紫外区或者近紫外区,利用传统的TiO2光催化剂对MC-LR的光催化氧化研究;太阳光中只有极少部分(约4%)的紫外光,大部分(约43%)是可见光,因此,如何将光催化剂的吸收光谱拓宽至可见光区域,提高催化剂对可见光的利用率,进一步提高光催化降解MC-RR的能力,具有一定的理论和实际意义.钒酸铋是一类新型的p型可见光光催化剂,将其与n型半导体Ag2O材料选择性的复合制备出p-n型异质结复合光催化剂能够显著地提高其光催化性能.本文将这种复合光催化剂的应用扩展到广泛检测到的毒素MC-RR的降解中,以实现可见光降解.发现Ag/Ag2O-BiVO4可以在可见光照射下有效光催化降解MC-RR.跟踪其降解中间产物,研究了其可能降解途径,并提出了在异质结催化剂表面上的光催化降解机理.催化剂表征结果表明,Ag2O和BiVO4形成有效的异质结界面,在降解中发挥重要作用.在该异质结结构中,Ag和Ag2O作为电子受体以增强电荷载流子寿命并提高光催化活性.依据MC-RR氧化产物的结构、化学性质和降解体系中所检测到的产物,推测其可能的机理:Ag-Ag2O-BiVO4可见光光催化降解MC-RR是一个涉及到羟基自由基和超氧自由基的共同氧化作用,同时根据液相质谱对中间产物的鉴定,得到MC-RR两条主要的可能降解途径,其中主要涉及到Adda中不饱和碳碳双键和Mdha中烯键的氧化,以及各氨基酸之间肽键的水解.小鼠急性毒理实验表明,经光催化反应后MC-RR的毒性明显减小.     

Electrodeposited Cu thin layers as low cost and effective underlayers for Cu2O photocathodes in photoelectrochemical water electrolysis

Journal of Solid State Electrochemistry - Cu2O is one of the most studied semiconductors for photocathodes in photoelectrochemical water splitting (PEC-WS). Its low stability is counterbalanced by...     

光降解刚果红的S型硫掺杂g-C3N4/TiO2异质结光催化剂

含有机物工业废水的处理仍然是人类实现可持续发展的重大挑战.而光催化作为一种先进的氧化环保技术,以其反应条件温和、能耗相对较低的优点在有机废水处理中受到越来越多的关注.近年来,人们设计和合成了许多不同结构和形状的光催化剂.特别是金属氧化物半导体以其适宜的能带结构、稳定的物化性质、无毒性等特点已成为光催化降解有机废水的研究热点.此外,一维纳米结构(1D)已被证实有利于光催化降解过程,其优势在于比表面积大,离子的迁移路径短,以及独特的一维电子转移轨道.尤其是TiO2纳米纤维由于其亲水性、特殊的形貌和合适的能带位置,在污染物水溶液的处理中表现出优异的光催化性能.然而,TiO2(～3.2 eV)的宽禁带、光生载流子的易复合等缺陷导致其光利用率较低,限制了其实际应用.因此,人们提出了许多提高光催化活性的策略,如掺杂金属或非金属元素、负载贵金属、构建异质结等.构建梯形(S型)异质结已被证实是提高复合材料光催化活性的一种有前途的策略.S型异质结不仅能有效地分离光生电子和空穴,而且还原能力低的半导体CB上的电子和氧化能力低的半导体VB上的空穴复合,而氧化还原能力较强的空穴和电子分别被保留.因此,这一电子转移过程赋予了复合物最大的氧化还原能力.同时,在g-C3N4中引入硫元素可以拓宽其光吸收范围,从而产生更多的光生载流子.此外,额外的表面杂质将有助于e?-h+对的分离,其光催化活性明显高于单纯的g-C3N4.综合一维纳米结构、硫掺杂和S型异质结的优势,本文采用静电纺丝和煅烧法制备了一系列硫掺杂的g-C3N4(SCN)/TiO2 S型光催化剂.制备的SCN/TiO2复合材料在光催化降解刚果红(CR)水溶液中表现出比纯TiO2和SCN更优越的光催化性能.光催化活性的显著增强是由于一维分布的纳米结构和S型异质结.此外,XPS分析和DFT计算表明,电子从SCN通过SCN/TiO2复合材料的界面转移到TiO2.在模拟太阳光照射下,界面内建电场、带边缘弯曲和库仑相互作用协同促进了复合物相对无用的电子和空穴的复合.因此,剩余的电子和空穴具有较高的还原性和氧化性,使复合材料具有最高的氧化还原能力.这些结果通过自由基捕获实验、ESR实验和XPS原位分析得到了充分的验证,说明光催化剂中的电子迁移遵循S型异质结机理.本文不仅可以丰富了新型S型异质结光催化剂的设计和制备方面的知识,并为未来解决环境污染问题提供一个有前景的策略.     

二维/二维S-型Bi3NbO7/g-C3N4异质结光催化剂驱动选择性CO2还原制CH4

人工光合作用可直接将二氧化碳转化为一系列碳氢化合物,实现大气中的碳循环,被视为一种既能解决能源短缺又能减少温室气体,进而改善人类生存环境的新型绿色技术.光催化二氧化碳还原体系需要合适的耦合氧化还原反应,以及对外界光源的有效利用以产生足够电子参与反应,因此构建高催化活性和高选择性的催化体系仍然面临着巨大挑战.此外,二维纳米结构(2D)由于具有比表面积大、离子的迁移路径短以及独特的平层电子转移轨道等特性,被证实有利于光催化还原CO₂过程.其中,Bi₃NbO₇特殊的片层结构和合适的能带位置,使其在光催化还原CO₂反应中表现出良好的催化性能.然而,Bi₃NbO₇的光生载流子易复合及反应中光腐蚀严重等缺陷导致其光利用率较低,限制了其实际应用.因此,构建S-型异质结是提高复合材料光催化活性的一种有前途的策略.S-型异质结不仅能有效地分离光生电子和空穴,而且这一电子转移过程赋予了复合物最大的氧化还原能力.同时,S-型光催化体系不仅拥有同样的强氧化和强还原能力,还可显著抑制副反应的发生及副产物的产生,有利于CO₂还原反应的高选择性进行.本文利用简易的溶剂热法制备了一系列S-型Bi₃NbO₇/g-C₃N₄(BNO/UCN)异质结光催化剂,与其纯组分催化剂相比,表现出优异的光催化还原CO₂活性,g-C₃N₄含量为80wt%的BNO/UCN-3光催化剂催化CO₂生成CH₄产率为37.59μmol·g^-1h^-1,是g-C₃N₄的15倍,CH₄选择性为90%;且循环反应10次后仍保持较高的活性及CH4选择性.光催化活性及选择性的显著增强是由于二维分布的纳米结构和S-型电荷转移路径.在可见光照射下,界面内建电场、带边缘弯曲和库仑相互作用协同促进了复合物相对无用的电子和空穴的复合.因此,剩余的电子和空穴具有较高的还原性和氧化性,使复合材料具有较高的氧化还原能力.自由基捕获实验、电子顺磁共振实验和原位X射线光电子能谱实验结果表明,光催化剂中的电子迁移遵循S-型异质结机理.综上,本文不仅为新型S-型异质结CO₂还原光催化剂的设计和制备提供了新方法,而且为未来解决能源短缺及实现碳中和目标提供一定的实验及理论依据.     

Group IB organometallic chemistry: XXIX. Synthetic and structural aspects of polynuclear arylcopperlithium compounds Ar4Cu2Li2 (“arylcuprates”) and interaggregate exchange phenomena in Ar4Cu4/Ar4Li4/Ar4Cu2Li2 systems

The thermally stable arylmetal-IB-lithium compounds (2-Me₂NCHZC₆H₄)₄M₂Li₂ (M = Cu, Ag or Au; Z = H or Me) and (2-Me₂NC₆H₄)₄M₂Li₂ have been prepared by a $\text{2}\text{1}$ molar reaction of the aryllithium compounds with the corresponding metal-IB halide (Cu or Ag) or metal-lB halide phosphine complex (BrAuPPh₃). These tetranuclear complexes were also made by an interaggregate exchange reaction of the pure arylmetal-IB clusters with the aryllithium compound.The structure of these compounds in solution consists of aryl groups bridging one metal-lB and one lithium atom of a trans M₂Li₂ core. The four built-in ligands coordinate to lithium resulting in two-coordination at M and four-coordination at Li. These conclusions were based on ¹H and ¹³C NMR spectroscopic data (J(AgC(1)), J(LiC(1)) of solutions of these tetranuclear compounds as well as on the ¹⁹⁷Au Mössbauer data of solid (2-Me₂NC₆H₄)₄Au₂Li₂ (IS 5.65 mm/s and QS 12.01 mm/s).The interaggregate exchange between the tetranuclear species is discussed in terms of an associative mechanism involving formation of an octanuclear intermediate in which the aryl groups can migrate via (3c-2e)edge-(2c-2e)corner(3c-2e)edge movements without M₂Ar bond cleavage.Some aspects of the organic reactions in which organocuprates are involved as intermediates are discussed in terms of the novel structural information.