High-efficiency organic light-emitting diodes (OLEDs) with a mixed layer structure

Improved performance of organic light-emitting diodes (OLEDs) as obtained by a mixed layer was investigated. The OLEDs with a mixed layer which were composed of N,N′-diphenyl-N,N′-bis(1-napthyl-phenyl)-1,1′-biphenyl-4,4′-diamine (NPB), tris-(8-hydroxyquinolato) aluminum (Alq₃) and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) showed the highest brightness and efficiency, which reached 19048 cd/m² at 17 V and 4.3 cd/A at 10 mA/cm², respectively. The turn-on voltage of the device is 2.6 V. Its Commission Internationale del’Eclairage (CIE) coordinate is (0.497, 0.456) at 17 V, and the CIE coordinates of the device are largely insensitive to the driving voltages, which depicts stabilized yellow color.     

Enhanced amplified spontaneous emission by assistant Förster energy transfer in DCJTB-C545T-Alq3 coguest-host system

Amplified spontaneous emission (ASE) characteristics of a red fluorescent dye 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) were significantly improved by assistant Förster energy transfer. The coguest-host system was composed of an electron transport organic molecule tris(8-hydroxyquinoline) aluminum (Alq₃) as host and a green fluorescent dye (10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-[1]benzopyrano[6,7,8-ij]quinolizin-11-one) (C545T) as assistant dopant codoped with the guest red dye DCJTB as emitter in a matrix of polystyrene (PS). It was found that the threshold and loss were greatly reduced to 0.007 mJ?pulse^-1 and 7 cm^-1, and the gain was significantly enhanced to 52 cm^-1 by doping of C545T. The improvement of ASE performance in Alq₃:C545T:DCJTB film was attributed to the energy assistant effect of C545T, leading more exciton energy to transfer to DCJTB.     

The roles of zinc selenide sandwiched between organic layers and its applications in white light-emitting diodes

In this paper, the roles of zinc selenide (ZnSe) sandwiched between organic layers, i.e. organic/ZnSe/aluminum quinoline (Alq₃), have been studied by varying device structure. A broad band emission was observed from ITO/poly(N-vinylcarbazole)(PVK)(80 nm)/ZnSe(120 nm)/ Alq₃(15 nm)/Al under electric fields and it combined the emissions from the bulk of PVK, ZnSe and Alq₃, however, emission from only Alq₃ was observed from trilayer device ITO/N,N^′-bis-(1-naphthyl)-N,N^′-diphenyl-1, 1^′-biphenyl-4, 4^′-diamine (NPB) (40 nm)/ZnSe(120 nm)/ Alq₃(15 nm)/Al. Consequently the luminescence mechanism in the ZnSe layer is suggested to be charge carrier injection and recombination. By thermal co-evaporating Alq₃ and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB), we get white light emission with a Commission Internationale de l’E clairage (C.I.E) co-ordinates of (0.32, 0.38) from device ITO/PVK(80 nm)/ZnSe(120 nm)/ Alq₃:DCJTB(0.5 wt% DCJTB)(15 nm)/Al at 15 V and the device performs stably with increasing applied voltages.     

Efficient red organic light-emitting diode sensitized by a phosphorescent Ir compound

The efficiencies of red organic light-emitting diode (OLED) using tris-(8-hydroxy-quinoline)aluminum (Alq₃) as host and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as dopant were greatly increased by adding a small amount (0.3 wt%) of Ir compound, iridium(III) bis(3-(2-benzothiazolyl)-7-(diethylamino)-2H-1-benzopyran-2-onato-N′,C⁴) (acetyl acetonate) (Ir(C6)₂(acac)), as a sensitizer. The device has a sandwiched structure of indium tin oxide (ITO)/4,4′,4″-tris(N-(2-naphthyl)-N-phenyl-amino)triphenylamine (T-NATA) (40 nm)/N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′ diamine (NPB) (40 nm)/Alq₃:DCJTB (0.7 wt%):Ir(C6)₂(acac) (0.3 wt%) (40 nm)/Alq₃ (40 nm)/LiF (1 nm)/Al (120 nm). It can be seen that the current efficiencies of this device remained almost (13.8±1) cd/A from 0.1 to 20,000 cd/m² and the Commission International d’Eclairage (CIE) coordinates at (0.60, 0.37) in the range of wide brightness. The significant improvement was attributed to the sensitization effect of the doped Ir(C6)₂(acac), thus the energy of singlet and triplet excitons is simultaneously transferred to the DCJTB.     

Red organic light-emitting devices with dotted-line doped emitting layers

High efficiency red organic light-emitting devices (OLEDs) with several dotted-line doped layers (DLDLs) were fabricated by using an ultra-high vacuum organic molecular-beam deposition system. The red OLEDs consisted of indium-tin-oxide (ITO)/N, N′-diphenyl-N, N′-bis(1-naphthyl)-(1, 1′-biphenyl)-4, 4′-diamine (α-NPD): 40 nm/tris(8-hydroxyquinoline)aluminum (Alq₃)+4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetra-methyljuloldyl-9-enyl)-4H-pyran (DCJTB); 3%wt.: x nm/(Alq₃+DCJTB; 3%wt./ Alq₃)_n−1: (30−x) nm/ Alq₃: 30 nm/Mg:Ag with n of 2, 4, 6, or 8, and x=30/(2n−1). The luminance yield of the device with 8 DLDLs was 75% higher than that of the device with a common doped layer. This was attributed to more formation of the excitons formed in a wider region resulting from the existence of the DLDLs. The dominant mechanisms of the dopant emission for the devices with DLDLs were described on the basis of the sequential carrier trapping process.     

Spectral studies of thin films based on poly(N-vinylcarzole) and red dopant

Organic light-emitting diodes were fabricated with a structure of indium-tin-oxide (ITO)/poly(N-vinylcarzole)(PVK):4-(dicyanom-ethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB)/8-tris-hydroxyquinoline aluminum (Alq₃)/lithium fluoride (LiF)/Al. The energy transfer from PVK to Alq₃ then to DCJTB and the charge trapping processes were investigated by employing the photoluminescence (PL) and electroluminescence (EL) spectra. With increasing thickness of the Alq₃ layer, the PL and EL emission from PVK were decreased gradually, which indicated that the effective energy transfer occurred from PVK to Alq₃ and then from Alq₃ to DCJTB. At the same time, we found that the exciton recombination zone could be adjusted by controlling the Alq₃ layer thickness and the applied voltages. The effects of different DCJTB concentrations on the optical and electrical characteristics of the devices were investigated, and an obvious red-shift was observed with the DCJTB dopant concentrations increasing in the PL and EL spectra.     

High-performance organic red-light-emitting device based on DCJTB and a new host material

An efficient red-light-emitting device using a new host material (DPF) and a red dopant (DCJTB) with a configuration of ITO/NPB (50 nm)/DCJTB:DPF (2%, 10 nm)/TPBI (30 nm)/LiF (0.5 nm)/Mg:Ag has been fabricated and investigated. The red OLED yields a brightness of 9270 cd/m² at 10 V, a maximum current efficiency of 4.2 cd/A and a maximum power efficiency of 3.9 lm/W. Using DPF as host material, the performance is much better than that of a prototypical Alq₃-based device, which has a maximum efficiency of 1.9 cd/A and 0.6 lm/W. The performance is even comparable with red OLEDs using an assist dopant or a cohost emitter system. Results of this work indicate that DPF is a promising host material for red OLEDs with high efficiency and simple device structure.     

Electrical characteristics and efficiency of organic light-emitting diodes depending on hole-injection layer

In a device structure of ITO/hole-injection layer/N,N′-biphenyl-N,N′-bis-(1-naphenyl)-[1,1′-biphthyl]4,4′-diamine(NPB)/tris(8-hydroxyquinoline)aluminum(Alq₃)/Al, we investigated the effect of the hole-injection layer on the electrical characteristics and external quantum efficiency of organic light-emitting diodes. Thermal evaporation was performed to make a thickness of NPB layer with a rate of 0.5–1.0 Å/s at a base pressure of 5 × 10⁻⁶ Torr. We measured current–voltage characteristics and external quantum efficiency with a thickness variation of the hole-injection layer. CuPc and PVK buffer layers improve the performance of the device in several aspects, such as good mechanical junction, reducing the operating voltage, and energy band adjustment. Compared with devices without a hole-injection layer, we found that the optimal thickness of NPB was 20 nm in the device structure of ITO/NPB/Alq₃/Al. By using a CuPc or PVK buffer layer, the external quantum efficiencies of the devices were improved by 28.9% and 51.3%, respectively.     

The effect of Ag layer thickness on the properties of WO3/Ag/MoO3 multilayer films as anode in organic light emitting diodes

Transparent conductive WO₃/Ag/MoO₃ (WAM) multilayer electrodes were fabricated by thermal evaporation and the effects of Ag layer thickness on the optoelectronic and structural properties of multilayer electrode as anode in organic light emitting diodes (OLEDs) were investigated using different analytical methods. For Ag layers with thickness varying between 5 and 20 nm, the best WAM performances, high optical transmittance (81.7%, at around 550 nm), and low electrical sheet resistance (9.75 Ω/cm²) were obtained for 15 nm thickness. Also, the WAM structure with 15 nm of Ag layer thickness has a very smooth surface with an RMS roughness of 0.37 nm, which is suitable for use as transparent conductive anode in OLEDs. The current density?voltage?luminance (J?V?L) characteristics measurement shows that the current density of WAM/PEDOT:PSS/TPD/Alq₃/LiF/Al organic diode increases with the increase in thickness of Ag and WO₃/Ag (15 nm)/MoO₃ device exhibits a higher luminance intensity at lower voltage than ITO/PEDOT:PSS/TPD/Alq₃/LiF/Al control device. Furthermore, this device shows the highest power efficiency (0.31 lm/W) and current efficiency (1.2 cd/A) at the current density of 20 mA/cm², which is improved 58% and 41% compared with those of the ITO-based device, respectively. The lifetime of the WO₃/Ag (15 nm)/MoO₃ device was measured to be 50 h at an initial luminance of 50 cd/m², which is five times longer than 10 h for ITO-based device.     

Highly efficient and stable organic light-emitting diode by balancing drift current of charge

Highly efficient and stable OLED device in which hole-drift current and electron-drift current are balanced was fabricated. Drift current characteristics according to the thickness of organic layer were examined using the device with ITO/m-MTDATA/NPB/Al structure that can only move the hole and the device with Al/LiF/Alq₃/LiF/Al structure that can only move the electron. Using the result of such examination, green device with balanced drift current was produced. Device with the structure of m-MTDATA (80 nm)/NPB (20 nm)/C-545T (3%) doped Alq₃ (5 nm)/Alq₃ (59 nm)/LiF (1 nm)/Al (200 nm) showed color purity of (0.309, 0.643) and high efficiency of 7.0 lm/W (14.4 cd/A). Most of light emission was observed inside the green emitting layer. Through the result of EL spectrum for the device also including red emitting layer, same result could be obtained. The device with balanced drift current also showed half life-time of 175 h for initial luminance of 3000 cd/m², which is more stable in comparison to the device without balanced drift current.     

Ion conduction in proton- and related defect (super) ionic conductors: Mechanical,electronic and structure parameters

We find the relationships among optical dielectric constant ε_∞, activation energy E_ac, averaged atomic mass per a formula unit, ∑_jm_j / N, volume V and transition temperature T_c for various type ion conductors with forms of E_ac = α / (ε_∞ ? β), E_ac = A₀ + δ / [(∑_jm_j / N) ? d], E_ac = A_v / V^2/3, and ln(T_c) = g ? hln(∑_jm_j), where α, β, δ, A₀, d, A_v, g and h are constants depending on the kinds of conduction elements. We derive those proportional forms from a simple equation of motion under the assumption of ion hopping assisted by enhanced vibration displacement of host lattice. The enhancement is induced from the large fourth-order term of the host lattice potential originating from the electronic shielding effect of Coulomb force, heavy atomic mass of constituent ion, and volume expansion under the long-range periodicity of crystal structure. This mechanism is ascertained from characteristic phenomena of various kinds of conduction elements. For impurity-type H⁺-ion or defect conductor, the proportional form is shifted from that of superionic conductor because of weakened effect of host lattice vibration mode on H⁺-ion or O-ion defect. Photo-induced spectra of mobile ion in AgCl are understood, and a small quantum effect of H⁺ -ion is suggested.     

RGB tricolor produced by white-based top-emitting organic light-emitting diodes with microcavity structure

RGB pixels by microcavity top-emitting organic light-emitting diode (TOLED) is beneficial to both minimizing the loss of light and improving the color purity and the efficiency. Based on the multi-emitting layers, white organic light-emitting diodes (OLEDs) and microcavity TOLEDs were prepared. TOLEDs were fabricated using Ag/ITO as the reflector and adjusting layer, Al/Ag as semi-transparent cathode, Alq:DCJTB/TBADN:TBPe/Alq:C545 as white light emitting layer. By adjusting the thickness of ITO, optical length of cavity and the color of the device have been changed. So we get RGB tricolor devices. The peak wavelengths are 476 nm, 539 nm, 601 nm, Commission Internationale d’Eclairage (CIE) coordinates are (0.133, 0.201), (0.335, 0.567), (0.513, 0.360), FWHM are 32 nm, 50 nm, 73 nm for blue, green and red, respectively.     

Drastic effects of fast neutrons and γ-irradiation on the DC conductivity of Co-, Ni-, Mn- and Ag-gelatin doped films

The effect of fast neutron fluencies and γ-rays on the DC conductivity, ln(σ), for pure gelatin and that doped with 5, 10, and 15 wt% of CoCl₂ · 6H₂O, and 5 wt% of NiCl₂ · 6H₂O, MnCl₂ · 2H₂O and AgNO₃ has been respectively investigated at different temperatures. Fast neutron fluencies and γ-rays doses are set from 7.60 × 10⁵ to 0.50 × 10⁹ N/cm², and 0.25 up to 1.50 Gy, respectively. The calculated values of activation energies (E_a) are found to be dependent on the radiation doses. The conductivity of gelatin samples shows an interesting behavior, which depends on the dopant Co concentration and the exposure dose. DC conductivity of the investigated samples reveals that the ionic conduction has been established at higher temperatures and fast neutron fluencies and γ-rays doses, while the electronic one plays an important role at lower temperatures. This has been related to the crosslinking formations as a result of the interaction between the exposure dose and gelatin sample. The attained results suggest strongly the applicability of these materials in dosimetry.     

Controllable synthesis of rice-shape Alq3 nanoparticles with single crystal structure

We report the controllable growth of rice-shape nanoparticles of Alq₃ by an extremely facile self-assembly approach. Possible mechanisms have been proposed to interpret the formation and controlled process of the single crystal nanoparticles. The field-emission performances (turn-on field 7 V μm⁻¹, maximum current density 2.9 mA cm⁻²) indicate the potential application on miniaturized nano-optoelectronics devices of Alq₃-based. This facile method can potentially be used for the controlled synthesis of other functional complexes and organic nanostructures.     

Enhanced power efficiency for white OLED with MoO3 as hole injection layer and optimized charge balance

White OLEDs with a different hole injection layer (MoO₃ or m-MTDATA), and a different electron transport layer (Alq₃ or Bphen) have been investigated. With 9,10-bis (2-naphthyl)-2-t-butylanthracene (TBADN) doped with 3% P-bis (P-N, N-diphenyl-aminostyryl) benzene (DSA-ph) and 0.05% 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7,-tetramethyl-julolidy-9-enyl)-4H-pyran (DCJTB) as white emitting layer, the MoO₃/ /Bphen based device shows the lowest driving voltage and highest power efficiency among the referenced devices. At the current density of 20 mA/cm², its driving voltage and power efficiency are 5.43 V and 4.54 lm/W respectively, which is independently reduced 40% and improved 57% compared with those of the m-MTDATA/ / Alq₃ based one, respectively. The energy level diagram of the devices and single-carrier devices are studied to explain the reasons for the improvement. The results strongly indicate that carrier injection ability and balance shows a key significance in OLED performance.     

Deep blue organic light emitting diode based on anthracene derivative as a dopant

This letter presents a deep blue organic light emitting diode which was fabricated by using 9,10-di(2-naphthyl)anthracene as a dopant and 4,4′-N,N′-dicarbazole-biphenyl as a host. The Commission Internationale de l’Eclairage coordinates of (0.1516, 0.0836) were achieved in the cell, which is very close to the National Television Standards Committee standard of (0.14, 0.08). Meanwhile, maximum luminance over 6500 cd/cm² and maximum current efficiency of 3.5 cd/A were also obtained.     

Effect of desiccant on the performance of green organic light-emitting device

A green organic light-emitting diodes (OLED) with a multilayer structure of indium-tin oxide (ITO)/copper-phthalocyanine (CuPc) (200Å)/N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (α-NPD) (600Å)/N′- diphenyl-N,N′-tris(8-hydroxyquinoline) aluminium (Alq₃) (400Å):10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7- tetrahydro-1H,5H,11H-(l)benzopyropyrano(6,7,8-i, j)quinolizin-11-one (C545T) (2%)/Alq₃ (200Å)/LiF (10Å)/Al (1000Å) was prepared via vacuum thermal evaporation. To reduce the impact of water vapor and oxygen on the device, we encapsulated it with a kind of specific and efficient desiccant, called DESIPASTE, under the protection of high-purity nitrogen. By analyzing a series of optical characteristics of OLEDs, the results showed that this desiccant can improve the brightness about 500 and 250 cd/m² at same driving voltage and current density, respectively. The electroluminescent (EL) spectra were hardly affected except a very weak blue shift of broadband emission peak. It turns out that encapsulation with DESIPASTE is a simple and efficient way to improve the performance of OLED.     

Structural,vibrational study and superprotonic behavior of a new mixed dipotassium hydrogenselenate dihydrogenphosphate K2(HSeO4)1.5(H2PO4)0.5

Ongoing studies of the KHSeO₄–KH₂PO₄ system aiming at developing novel proton conducting solids resulted in the new compound K₂(HSeO₄)_1.5(H₂PO₄)_0.5 (dipotassium hydrogenselenate dihydrogenphosphate). The crystals were prepared by a slow evaporation of an aqueous solution at room temperature. The structural properties of the crystals were characterized by single-crystal X-ray analysis: K₂(HSeO₄)_1.5(H₂PO₄)_0.5 (denoted KHSeP) crystallizes in the space group P 1¯ with the lattice parameters: a = 7.417(3) Å, b = 7.668(2) Å, c = 7.744(5) Å, α = 71.59(3)°, β = 87.71(4)° and γ = 86.04(6)°. This structure is characterized by HSeO₄⁻ and disordered (H_xSe/P)O₄⁻ tetrahedra connected to dimers via hydrogen bridges. These dimers are linked and stabilized by additional hydrogen bonds (O–H–O) and hydrogen bridges (O–H…O) to build chains of dimers which are parallel to the [0, 1, 0] direction at the position x = 0.5.The differential scanning calorimetry diagram showed two anomalies at 493 and 563 K. These transitions were also characterized by optical birefringence, impedance and modulus spectroscopy techniques. The conductivity relaxation parameters of the proton conductors in this compound were determined in a wide temperature range. The transport properties in this material are assumed to be due to H⁺ protons hopping mechanism.     

On the rate constants of OH + HO2 and HO2 + HO2: A comprehensive study of H2O2 thermal decomposition using multi-species laser absorption

Hydrogen peroxide (H₂O₂) and hydroperoxy (HO₂) reactions present in the H₂O₂ thermal decomposition system are important in combustion kinetics. H₂O₂ thermal decomposition has been studied behind reflected shock waves using H₂O and OH diagnostics in previous studies (Hong et al. (2009) [9] and Hong et al. (2010) [6,8]) to determine the rate constants of two major reactions: H₂O₂ + M → 2OH + M (k₁) and OH + H₂O₂ → H₂O + HO₂ (k₂). With the addition of a third diagnostic for HO₂ at 227 nm, the H₂O₂ thermal decomposition system can be comprehensively characterized for the first time. Specifically, the rate constants of two remaining major reactions in the system, OH + HO₂ → H₂O + O₂ (k₃) and HO₂ + HO₂ → H₂O₂ + O₂ (k₄) can be determined with high-fidelity.No strong temperature dependency was found between 1072 and 1283 K for the rate constant of OH + HO₂ → H₂O + O₂, which can be expressed by the combination of two Arrhenius forms: k₃ = 7.0 × 10¹² exp(550/T) + 4.5 × 10¹⁴ exp(?5500/T) [cm³ mol^?1 s^?1]. The rate constants of reaction HO₂ + HO₂ → H₂O₂ + O₂ determined agree very well with those reported by Kappel et al. (2002) [5]; the recommendation therefore remains unchanged: k₄ = 1.0 × 10¹⁴ exp(?5556/T) + 1.9 × 10¹¹⁺exp(709/T) [cm³ mol^?1 s^?1]. All the tests were performed near 1.7 atm.     

Improved performances of red organic light-emitting devices by co-doping a rubrene derivative and DCJTB into tris-(8-hydroxyquinoline) aluminum host

Performances of red organic light-emitting device were improved by co-doping 2-formyl-5,6,11,12-tetraphenylnaphthacene (2FRb) and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetra-methyljulolidyl-9-enyl)-4H-pyran (DCJTB) in tris-(8-hydroxyquinoline) aluminum (Alq₃) host as the emitting layer. The device with 1 wt% DCJTB and 2.4 w% 2FRb in Alq₃ host gave a saturated red emission with CIE chromaticity coordinates of (0.65, 0.35) and a maximum current efficiency as high as 6.45 cd/A, which are 2 and 2.4 fold larger than that of the device with 1 wt% DCJTB (3.28 cd/A) in Alq₃ host and the device with 2.4 wt% 2FRb (2.72 cd/A) in Alq₃ host at the current density of 20 mA/cm², respectively. The improvement could be attributed to the effective utilization of host energy by both energy transfer and trapping in the electroluminescence process and the depression of concentration quenching between the dopants molecules.