CO gas sensing by ultrathin tin oxide films grown by atomic layer deposition using transmission FTIR spectroscopy

Ultrathin tin oxide films were deposited on SiO2 nanoparticles using atomic layer deposition (ALD) techniques with SnCl4 and H2O2 as the reactants. These SnO(x) films were then exposed to O2 and CO gas pressure at 300 degrees C to measure and understand their ability to serve as CO gas sensors. In situ transmission Fourier transform infrared (FTIR) spectroscopy was used to monitor both the charge conduction in the SnO(x) films and the gas-phase species. The background infrared absorbance measured the electrical conductivity of the SnO(x) films based on Drude-Zener theory. O2 pressure was observed to decrease the SnO(x) film conductivity. Addition of CO pressure then increased the SnO(x) film conductivity. Static experiments also monitored the buildup of gas-phase CO2 reaction products as the CO reacted with oxygen species. These results were consistent with both ionosorption and oxygen-vacancy models for chemiresistant semiconductor gas sensors. Additional experiments demonstrated that O2 pressure was not necessary for the SnO(x) films to detect CO pressure. The background infrared absorbance increased with CO pressure in the absence of O2 pressure. These results indicate that CO can produce oxygen vacancies on the SnO(x) surface that ionize and release electrons that increase the SnO(x) film conductivity, as suggested by the oxygen-vacancy model. The time scale of the response of the SnO(x) films to O2 and CO pressure was also measured by using transient experiments. The ultrathin SnO(x) ALD films with a thickness of approximately 10 A were able to respond to O2 within approximately 100 s and to CO within approximately 10 s. These in situ transmission FTIR spectroscopy help confirm the mechanisms for chemiresistant semiconductor gas sensors.     

Self-assembled monolayer and multilayer films of the nanocluster [HxPMo12O40 subsetH4Mo72Fe30(O2CMe)15O254(H2O)68] on gold

Films of the molybdenum-iron nanocluster [H x PMo 12O 40 subsetH 4Mo 72Fe 30(O 2CMe) 15O 254(H2O) 68] (FeMoC) were generated on gold via the self-assembly technique using two divergent routes. The first route entails the self-assembly of unfunctionalized FeMoC onto a preprepared carboxyl-terminated SAM on gold. The second route involves the preparation of thiol-terminated functionalized FeMoC clusters, which are then allowed to self-assemble onto bare gold surfaces. Monolayer films of FeMoC clusters are attained via both routes, with the second route requiring shorter immersion times (2 days) than the first route (6 days). Multilayer films of FeMoC are formed via the second route for immersion times longer than 2 days. Characterization of these films using optical ellipsometry, X-ray photoelectron spectroscopy, and atomic force microscopy confirm the self-assembly of the clusters on the surfaces.     

Enhancement of the power conversion efficiency for inverted polymer solar cells due to an embedded CuxO interlayer formed by using Cu(I) acetate and Cu(II) acetate

Structural, optical, and photovoltaic properties of copper-oxide (Cu_xO) thin films formed by using a sol–gel method were investigated. X-ray diffraction patterns showed that the Cu_xO films prepared utilizing Cu(I) acetate or Cu(II) acetate and annealed under ambient atmosphere at various temperatures were polycrystalline with two phases, Cu₂O and Cu₆₄O. Transmittance spectra showed that the energy band gaps of the Cu_xO thin films formed by using Cu(II) acetate were smaller than those formed by using Cu(I) acetate. Current–voltage results showed that the power conversion efficiencies of the inverted polymer solar cells utilizing the Cu_xO interlayer formed by using Cu(II) acetate were better than those utilizing the Cu_xO interlayer formed by using Cu(I) acetate due to the multiple band gaps of the Cu(II) acetate.     

Electron-stimulated production of molecular oxygen in amorphous solid water

The low-energy, electron-stimulated production of molecular oxygen from pure amorphous solid water (ASW) films and ASW films codosed with H(2)O(2) is investigated. Layered films of H(2)(16)O and H(2)(18)O are used to investigate the reaction mechanisms for O(2) production and the spatial profile of the reactions within the films. The O(2) yield is dose-dependent, indicating that precursors are involved in the O(2) production. For temperatures below approximately 80 K, the O(2) yield at steady state is relatively low and nearly independent of temperature. At higher temperatures, the yield increases rapidly. The O(2) yield is enhanced from H(2)O(2)-dosed water films, but the experiments show that H(2)O(2) is not the final precursor in the reactions leading to O(2). Instead, a stable precursor for O(2) is produced through a multistep reaction sequence probably involving the reactions of OH radicals to produce H(2)O(2) and then HO(2). The O(2) is produced in a nonthermal reaction from the HO(2). For relatively thick films, the reactions leading to O(2) occur at or near the ASW/vacuum interface. However, the electronic excitations that initiate the reactions occur over a larger range in the film. A kinetic model that qualitatively accounts for all of the observations is presented.     

Boundary effects on the electrical conductivity of pure and doped cerium oxide thin films

Thin films of CeO(2) (both nominally pure and 10 mol% gadolinium-doped) grown via pulsed-laser deposition were studied. The electrical conductivity of the samples was measured as a function of thickness, temperature and oxygen partial pressure (pO(2)) using impedance spectroscopy. As expected, undoped CeO(2) exhibits electronic conductivity (with activation energy between 1.4 and 1.6 eV) whereas the highly doped samples are oxygen vacancy conductors (activation energy around 0.7 eV for epitaxial films). In order to investigate the influence of the nature of the substrate the thin films were grown on two different substrates, Al(2)O(3) (0001) and SiO(2) (0001), and compared. While the films grown on SiO(2) exhibit a microstructure characterized by columnar grains, the films grown on Al(2)O(3) are epitaxial. Notably, for films on both substrates the conductivity and activation energy vary with film thickness and exhibit remarkable differences when the films on different substrates are compared. In the case of the polycrystalline films (SiO(2) substrate), the space charge layer effects of the grain boundaries dominate over the substrate-film interface effect. In the case of the epitaxial films (Al(2)O(3) substrate), a small interface effect, probably due to a space charge layer or structural strain, is observed.     

Charge transport and optical properties of MOCVD-derived highly transparent and conductive Mg- and Sn-doped In2O3 thin films

Mg- and Sn-doped In2O3 (MgIn(x)Sn(y)O(z), 6.0 < x < 16.0; 3.0 < y < 8.0) thin films were grown by low-pressure metal-organic chemical vapor deposition using the volatile metal-organic precursors tris(2,2,6,6-tetramethyl-3,5-heptanedionato)indium(III) [In(dpm)3], bis(2,4-pentanedionato)tin(II) [Sn(acac)2], and bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(N,N,N',N'-tetramethylethylenediamine)magnesium(II) [Mg(dpm)2(TMEDA)]. Films in this compositional range retain the cubic In2O3 bixbyite crystal structure. The highest conductivity is found to be approximately 1000 S/cm for an as-grown film with a nominal composition MgIn14.3Sn6.93O(z). Annealing of such films in a vacuum raises the conductivity to approximately 2000 S/cm. The optical transmission window of the present films is significantly wider than that of typical indium tin oxide (ITO) films from 300 to 3300 nm, and the transmittance is also greater than or comparable to that of commercial ITO films.     

Control of moisture at buried polymer/alumina interfaces through substrate surface modification

Moisture absorption in poly(4-tert-butoxycarbonyloxystyrene) (PBOCSt) films supported on Al(2)O(3) sputter coated silicon wafers is measured using neutron and X-ray reflectivity. Accumulation of water at the interface during moisture exposure results in an apparent film-thickness-dependent swelling for ultrathin PBOCSt films. The swelling of a film on Al(2)O(3) is less than the swelling of a film of the same thickness on SiO(x) for films thinner than 20 nm. This is due to comparatively less moisture accumulation at the Al(2)O(3)/PBOCSt interface. A simple, zero adjustable parameter model consisting of a fixed water-rich layer at the interface and bulk swelling through the remainder of the film describes the thickness-dependent swelling quantitatively. The influence of four different Al(2)O(3) surface treatments on the moisture distribution within PBOCSt films was examined: bare Al(2)O(3), tert-butylphosphonic acid, phenylphosphonic acid, and n-octyltrichlorosilane. Both the phenyl and the octyl surface treatments reduce the accumulation of water at the polymer/substrate interface. The tert-butyl treatment does not reduce the interfacial water concentration, presumably due to insufficient surface coverage.     

溶胶-凝胶法制备的Y_2O_3薄膜的光波导性质研究

用醋酸钇溶解于甲氧基乙醇的溶胶 凝胶法制备了Y2 O3光波导薄膜。通过二乙烯三胺的络合作用 ,获得了均匀和稳定的前驱液 ,并用浸渍提拉法得到了薄膜。差热分析、红外吸收光谱被用来表征Y2 O3凝胶和粉末。用XRD、扫描电子显微镜、m线法和波导荧光光谱法研究了Y2 O3光波导薄膜的结构和光波导性质。结果表明 ,Y2 O3薄膜对于光活性掺杂是一种很好的基质材料 ,预示Y2 O3薄膜在光电子方面具有巨大的应用前景。     

溶胶-凝胶-水热晶化法制备锐钛矿TiO2纳米膜的耐蚀性能

以钛酸正丁酯为前驱体, 采用溶胶-凝胶-水热晶化法在不锈钢(SS)表面制备TiO₂纳米膜. 利用X射线衍射(XRD)、Raman光谱、场发射扫描电子显微镜(SEM)、原子力显微镜(AFM)和俄歇电子能谱(AES)表征了TiO₂纳米膜的晶型、表面形貌和表面化学组成. 通过极化曲线和电化学阻抗谱(EIS)研究了TiO₂纳米膜的耐蚀性能. 170 °C下水热晶化制备的锐钛矿TiO₂与450 °C焙烧制备的锐钛矿TiO₂的结晶度类似, 但两种TiO₂薄膜的表面结构存在明显差异, 水热晶化法制备的TiO₂纳米膜在3.5% (w) NaCl溶液中的耐蚀性能优于焙烧法制备的.     

Novel hybrid optical sensor materials for in-breath O(2) analysis

This study focuses on the optimisation and characterisation of novel, ORganically MOdified SILicate (ORMOSIL)-based, hybrid sensor films for use in the detection of O(2) on a breath-by-breath basis in human health monitoring applications. The sensing principle is based on the luminescence quenching of the O(2)-sensitive ruthenium complex [Ru(ii)-tris(4,7-diphenyl-1,10-phenanthroline)], which has been entrapped in a porous sol-gel film. The detection method employed is that of phase fluorometry using blue LED excitation and photodiode detection. Candidate sensor films include those based on the organosilicon precursors, methyltriethoxysilane, ethyltriethoxysilane, n-propyltriethoxysilane and phenyltriethoxysilane. While it has been established previously by the authors that these films exhibit a stable, highly sensitive response to O(2), this study focuses on selecting the material most suited for use in a breath monitor, based on the sensitivity, response time and humidity sensitivity of these films. Key parameters to be optimised include the O(2) sensitivity of the film and the film polarity, i.e. the degree of hydrophobicity. These parameters are directly linked to the precursors used. In this study a n-propyltriethoxysilane-derived O(2) sensor platform was selected as the optimum material for in-breath O(2) analysis due to its short response time, negligible humidity interference and suitable O(2) sensitivity in the relevant range in addition to its compatibility with a single-point calibration strategy.     

溶胶-凝胶法制备高取向Bi4Ti3O12/SrTiO3(100)薄膜

Bi4Ti3O12具有良好的铁电、电光等性能山、特别是Bi4Ti3O12薄膜很适合作永久性存储材料，也可用于电光器件问．在微电子学、光电子学、集成光学、集成铁电学等领域均有广泛开发和应用前景，国外已用溅射法、激光沉积法制备出c轴取向Bi。Ti3Ol。薄膜【’，＼山东大学用MOCVD法制     

自组装超薄膜修饰Ta2O5介质膜及其特性研究

采用静电自组装方法在五氧化二钽(Ta2O5)介质氧化膜上制备了聚二烯丙基二甲基氯化铵(PDDA)/聚苯乙烯磺酸钠(PSS)和聚二烯丙基二甲基氯化铵/聚-3,4-乙烯二氧噻吩-聚苯乙烯磺酸钠(PEDOT-PSS)超薄膜.研究了两种自组装超薄膜在Ta2O5介质氧化薄膜上的组装特性.结果表明两种自组装膜能够稳定地组装于Ta2O5介质膜表面,并有效降低薄膜的表面粗糙度.进一步研究了两种自组装超薄膜修饰的Ta2O5电容结构的电性能.结果表明静电自组装膜对Ta2O5介质膜表面进行修饰后,有效地隔离了介质氧化膜中的缺陷,降低了电容的漏电流并提高耐电压能力;研究还发现不同厚度的超薄膜对Ta2O5电容结构的耐压特性有不同程度的影响,较厚的薄膜可以更好地提高电容的耐压能力并降低漏电流,但会增加电容的等效串联电阻(ESR).另外,在相同薄膜层数的情况下,聚合物电解质PEDOT-PSS良好的导电性能降低了复合超薄膜的电阻,使得PDDA/PEDOT-PSS修饰的电容结构ESR值较低.     

ZnO/Cu2O异质结中深能级表面光伏特性

采用恒电压沉积法在导电玻璃(FTO)上制备了具有三棱柱金字塔状的ZnO/Cu2O异质结薄膜. 利用场发射扫描电镜(FESEM)与X射线衍射仪(XRD)对薄膜的微观形貌和晶体结构进行了表征. 利用表面光电压谱(SPS)、场诱导表面光电压谱(FISPS)和相位谱(PS)研究了单一Cu2O与ZnO/Cu2O异质结薄膜的表面光伏性质. 结果表明, 与单一Cu2O薄膜相比, ZnO/Cu2O异质结薄膜的光伏响应范围拓展到了600~800 nm. 根据SPS, FISPS和PS的作用原理, 拓展部分的光伏响应归因于ZnO/Cu2O异质结中Cu2O层的深能级跃迁, 该跃迁在ZnO-Cu2O界面电场(方向由ZnO指向Cu2O)的作用下得到加强, 同时深能级跃迁产生的电子-空穴对在ZnO-Cu2O界面电场的作用下得到了有效分离和传输.     

Ga2O3 and GaN nanocrystalline film: reverse micelle assisted solvothermal synthesis and characterization

Gallium oxide (beta-Ga2O3) nanoparticles were successfully deposited on quartz glass substrates using sodium bis(2-ethylhexyl) sulfosuccinate (AOT)/n-hexane/ethylene glycol monomethyl ether (EGME) reverse micelle-mediated solvothermal process with different omega values. The mean diameter of Ga2O3 particles was approximately 2-3 nm and found to be approximately independent of omega values of the reverse micelles. However, when the Ga2O3 nanocrystalline films were nitrided at 900 degrees C under flowing NH3 atmosphere for 1 h, the mean diameter of the resulted gallium nitride (wurtzite-GaN) nanoparticles varied from 3-9 nm. Both nanocrystalline films of Ga2O3 and GaN were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy, UV-vis spectroscopy and photoluminescence in order to study their chemical and physical properties explicitly.     

Y2O3和Nd2O3介孔薄膜的制备与表征

以聚乙烯合丁烯-嵌-聚氧乙烯嵌段共聚物(PHB-PEO)作模板, 采用蒸发诱导自组装方法, 分别制备了Y2O3和Nd2O3介孔薄膜. 用小角、广角X射线衍射和透射电子显微镜对薄膜样品在不同的热处理阶段进行了表征. 结果表明, 所制备的Y2O3和Nd2O3薄膜样品呈现一种大孔径(平均孔径分别约为11.5和12.5 nm)、有序的立方扭曲球形孔排列、稳定于450 ℃并具有部分晶态孔壁结构的介孔薄膜材料.     

Structural and Optical Properties of ZnO Films with Different Thicknesses Grown on Sapphire by MOCVD

IntroductionZnOis one of the most promising materials for pro-ducing ultraviolet laser at room temperature because ofits wide direct band gap(Eg=3.37eV)and large ex-citonic binding energy of60meV.Recently,much at-tention has been paid to short-wavelength …     

Photoresponse of p-type zinc-doped iron(III) oxide thin films

Stable zinc-doped iron(III) oxide thin films that exhibit p-type behavior were synthesized by spray pyrolytic deposition (SPD) on conducting indium-doped tin oxide-coated glass substrate. The highest photocurrent density of 1.1 mA/cm2 was observed at an illumination intensity of 40 mW/cm2 at -0.8 V vs Pt for zinc-doped p-Fe2O3 samples prepared at an optimum substrate temperature of 663 K using an optimum spray time of 70 s. A quantum efficiency of 21.1% at 325 nm was found for SPD samples prepared using a dopant concentration of 0.0088 M zinc nitrate hexahydrate. X-ray diffraction results showed structures of alpha-Fe2O3 and ZnFe2O4. A direct band gap energy of 2.2 eV was found from monochromatic photocurrent density data and agrees closely with the band gap obtained from UV-vis absorption. The X-ray photoelectron spectroscopy results also confirm the presence of zinc dopant (4.0 atomic %) in thin films of zinc-doped p-Fe2O3.     

Characterization and Electrocatalytic Properties of Composite Poly(new fuchsin) and Phosphomolybdate Films

Organic/inorganic hybrid films of poly(new fuchsin) and phosphomolybdate (PMo₁₂O ) have been prepared in acidic aqueous solutions. These new combination films are stable, electrochemically active, and can be produced on glassy carbon, platinum, gold, and transparent semiconductor tin oxide electrodes. An electrochemical quartz crystal microbalance along with cyclic voltammetry and UV‐visible absorption spectroscopy were used to study the in situ growth of the hybrid films. The hybrid poly(new fuchsin) and PMo₁₂O films showed four obvious redox couples, and when transferred to various acidic aqueous solutions, the formal potentials of the four redox couples were found to be pH dependent. The electrocatalytic reduction of ClO , BrO , IO , SO , S₂O , H₂O₂, and NO by the hybrid poly(new fuchsin) and PMo₁₂O films was achieved in acidic aqueous solutions. In an aqueous solution at pH 1.5, a hybrid poly(new fuchsin) and PMo₁₂O film showed a higher electrocatalytic reduction activity of IO than BrO or ClO , and the order of electrocatalytic activity was IO >BrO >ClO . The order of electrocatalytic reduction of SO , S₂O , H₂O₂, and NO by hybrid poly(new fuchsin) and PMo₁₂O films in an aqueous solution at pH 1.5 was NO >H₂O₂>S₂O and SO . The electrocatalytic reactions of the poly(new fuchsin) and PMo₁₂O films were investigated using the rotating ring‐disk electrode method.     

Synthesis and characterization of self-assembled c-axis oriented Bi2Sr3Co2O(y) thin films by the sol-gel method

Bi(2)Sr(3)Co(2)O(y) thin films are prepared on SrTiO(3) (100), (110) and (111) single crystal substrates using the sol-gel method. All the thin films are c-axis oriented regardless of the orientation of the substrate suggesting self-assembled c-axis orientation, and X-ray photoelectron spectroscopy results give evidence of coexistence of Co(3+) and Co(2+) ions in the derived films. Transmission electronic microscopy observations reveal that all samples are c-axis oriented with no obvious differences for different samples, and the c-axis lattice constant is determined as ~15 ? suggesting the misfit structure. A phenomenological thermodynamic phase diagram for self-assembled c-axis orientation is established for misfit cobaltate-based films using chemical solution deposition. All samples behave like semiconductors due to the coexistence of Co(3+)/Co(2+) ions, and the resistivity at 350 K is ~47, 39 and 17 mΩ cm for the thin films on SrTiO(3) (100), (110) and (111), respectively, whereas the Seebeck coefficient at 300 K is 97, 89 and 77 μV K(-1). The successful attainment of Bi(2)Sr(3)Co(2)O(y) thin films with self-assembled c-axis orientation will provide an effective prototype for investigation of growth mechanisms in complex oxide thin films with a misfit structure.     

Influence of precursors chemistry on ALD growth of cobalt-molybdenum oxide films

Cobalt molybdenum compounds are important catalytic materials in many processes, e.g. in splitting of ammonia to form CO free hydrogen fuel. We here report on deposition of such cobalt molybdenum oxides by atomic layer deposition (ALD) using different types of metal precursors CoCp(2) (Cp = cyclopentadienyl), Co(thd)(2) (Hthd = 2,2,6,6-tetramethylheptan-3,5-dione), Mo(CO)(6) and oxygen precursors O(3), H(2)O, and (O(3) + H(2)O). The growth dynamics have been investigated using quartz crystal microbalance (QCM) methods. It is evident that mixing of the different precursor chemistries affect the growth patterns. When water is introduced to the reactions, a surface controlled mechanism takes place which guides the deposited stoichiometry towards the CoMoO(4) phase over a wide range of cobalt rich pulsed compositions. This is a rare example of how surface chemistry can control stoichiometry of depositions in ALD. The deposited films have been investigated by X-ray diffraction, Raman spectroscopy and atomic force microscopy. The catalytic activity of selected films have been characterized by temperature programmed ammonia decomposition, proving the films to be catalytically active and lowering the decomposition temperature by some 200 °C.