Phase pure CuSbS2 thin films by heat treatment of electrodeposited Sb2S3/Cu layers

Journal of Solid State Electrochemistry - In this work, we report the fabrication of CuSbS2 (CAS) thin films from Sb2S3/Cu multilayer developed by using electrodeposition. Sb2S3 thin films of...     

Triethanolamine concentration effect on electrodeposited SnS thin films properties

Journal of Solid State Electrochemistry - SnS thin films were electrodeposited onto ITO-coated glass substrates using one-step potentiostatic electrodeposition in a bath solution consisting of tin...     

Electrochemical deposition and characterization of SnS thin films

Thin films of SnS were cathodically deposited onto stainless steel substrates from bath containing 0.025 M SnSO₄, 0.25 M KSCN and 0.25 M Na₂SO₄. The mechanism of electrochemical co-deposition of tin and sulphur was investigated by cyclic voltammetry. Analysis of the chronoamperometric current–time transients suggested that, in the potential range −560 to −590 mV vs saturated calomel electrode, the electrodeposition of SnS involved progressive nucleation model. However, at a potential −600 mV, the electrodeposition involved instantaneous nucleation model. The deposits have been characterized by scanning electron microscopy, X-ray diffraction and optical measurements. SnS films were found to be polycrystalline with an optical energy gap of 1.38 eV.     

Direct electrodeposition of PbTe thin films on n-type silicon

High quality lead telluride thin films were directly deposited onto n-type silicon (1 0 0) substrates by electrodeposition at room temperature. The deposition mechanism was studied using cyclic voltammetry. The films were characterized by scanning electron microscopy, energy dispersive X-ray, X-ray diffraction, and Fourier transform infrared spectroscopy. The results indicated that the deposited PbTe films exhibited a polycrystalline rock salt structure and good optical properties with a direct band gap of 0.31 eV.     

Fabrication of coaxial TiO2/Sb2S3 nanowire hybrids for efficient nanostructured organic-inorganic thin film photovoltaics

We report on low-cost, all solution fabrication of efficient air-stable nanostructured thin film photovoltaics comprised of n-type Sb(2)S(3) chemically deposited onto TiO(2) nanowire array films, forming coaxial Sb(2)S(3)/TiO(2) nanowire hybrids vertically oriented from the SnO(2):F coated glass substrate, which are then intercalated with poly(3-hexylthiophene) (P3HT) for hole transport and enhanced light absorption.     

SnS and SnS2 thin films deposited using a spin‐coating technique from intramolecularly coordinated organotin sulfides

Synthesis and applications of organotin(II) sulfide ({2,6‐(Me₂NCH₂)₂C₆H₃}Sn)₂(μ‐S) ( 1 ), organotin(II) thiophenolate {2,6‐(Me₂NCH₂)₂C₆H₃}Sn(SPh) ( 2 ) and organotin(IV) heptasulfide {2,6‐(Me₂NCH₂)₂C₆H₃}₂Sn₂S₇ ( 3 ) as potential single‐source precursors (SSPs) for the deposition of SnS or SnS₂ thin films using a spin‐coating method are reported. Compounds 1 , 2 and 3 differ either by tin oxidation state or by Sn:S ratio (Sn:S = 2:1 in 1 , 1:1 in 2 and 2:7 in 3 ). It is shown that compound 1 is not a suitable SSP for thin‐film fabrication using the spin‐coating process because of its incomplete decomposition at annealing temperature. However, compounds 2 and 3 seem to be promising SSPs for spin‐coating of amorphous semiconducting thin films of SnS and SnS₂, respectively. Copyright © 2015 John Wiley & Sons, Ltd.     

SnO2+Sb2O3中间层的制备条件对Ti/SnO2+Sb2O3/PbO2阳极性能的影响

二氧化铅;SnO2+Sb2O3中间层的制备条件对Ti/SnO2+Sb2O3/PbO2阳极性能的影响     

Sno2+Sb203中间层的制备条件对Ti/SnO2+Sb2O3/PbO2阳极性能的影响

研究了聚合前驱体制备的SnO2+Sb2O3中间层的焙烧温度、锑含量对Ti/SnO2+Sb2O3/PbO2阳极性能的影响. 用XRD、ESEM和探针法对锡锑中进行了表征,应用阳极寿命快速检测法测定了Ti/SnO2+Sb2O3/PbO2电极在1.0 mol/L H2SO4溶液中的寿命,并用极化曲线和电荷容量表征了锡锑中间层对钛基PbO2阳极性能的影响. 实验结果表明,聚合前驱体制备中间层的焙烧温度和锑含量对Ti/SnO2+Sb2O3/PbO2电极的寿命和性能有显著的影响. 在锡锑中间层的制备温度为500 ℃、n(Sn):n(Sb)=9:1时,制得的Ti/SnO2+Sb2O3/PbO2电极用阳极寿命快速检测法测得的电极寿命达30h,具有良好的稳定性.     

Room-temperature synthesis of self-assembled Sb2S3 films and nanorings via a two-phase approach

The freestanding Sb(2)S(3) films were easily synthesized at the interface of water and toluene at room temperature, where Na(2)S and (C(2)H(5)OCS(2))(3)Sb (xanthate, O-ethyldithiocarbonate) acted as sulfur and antimony source, respectively. After 3 h of aging, the Sb(2)S(3) films with a flat surface toward organic side and rough surface toward aqueous side were assembled by sheaflike Sb(2)S(3) nanowires. The Sb(2)S(3) nanorings formed by end-to-end connection of the bundled nanowires appeared in the water layer when the reaction time reached 24 h. The Sb(2)S(3) nanorings showed higher photocatalytic activity for methyl orange degradation under visible light than the Sb(2)S(3) films owing to broader spectrum response and better aqueous dispersion.     

Electrodeposition of Fe-doped Sb2Se3 thin films for photoelectrochemical applications and study of the doping effects on their properties

Journal of Solid State Electrochemistry - Sb2Se3 (SSe) has been highlight as a low-cost, less complex, low toxicity, and earth-abundant photovoltaic (PV) absorber not only because of its excellent...     

Electrochemical aspects and structure characterization of VA-VIA compound semiconductor Bi2Te3/Sb2Te3 superlattice thin films via electrochemical atomic layer epitaxy

This paper concerns the electrochemical atom-by-atom growth of VA-VIA compound semiconductor thin film superlattice structures using electrochemical atomic layer epitaxy. The combination of the Bi2Te3 and Sb2Te3 programs and Bi2Te3/Sb2Te3 thin film superlattice with 18 periods, where each period involved 21 cycles of Bi2Te3 followed by 21 cycles of Sb2Te3, is reported here. According to the angular distance between the satellite and the Bragg peak, a period of 23 nm for the superlattice was indicated from the X-ray diffraction (XRD) spectrum. An overall composition of Bi 0.25Sb0.16Te0.58, suggesting the 2:3 stoichiometric ratio of total content of Bi and Sb to Te, as expected for the format of the Bi2Te3/Sb2Te3 compound, was further verified by energy dispersive X-ray quantitative analysis. Both field-emission scanning electron microscopy and XRD data indicated the deposit grows by a complex mechanism involving some 3D nucleation and growth in parallel with underpotential deposition. The optical band gap of the deposited superlattice film was determined as 0.15 eV by Fourier transform infrared spectroscopy and depicts an allowed direct type of transition. Raman spectrum observation with annealed and unannealed superlattice sample showed that the LIF mode has presented, suggesting a perfect AB/CB bonding in the superlattice interface.     

High-quality ultralong Sb2S3 nanoribbons on large scale

Large-scale, ultralong, single-crystalline Sb2S3 nanoribbons were prepared by directly reacting SbCl3 and Na2S2O3 solutions, without any organics used in the experiment. The nanoribbons were analyzed by a range of methods. The nanoribbons are usually several millimeters in length, typically 200-500 nm in width and 30-80 nm in thickness. The structure of the nanoribbons is determined to be of the orthorhombic phase. The growth mechanism of the nanoribbons was investigated based on high-resolution transmission electron microscopy observations. Optical absorption experiment shows that the nanoribbon is a semiconductor with a bandwidth Eg approximately 1.5 eV, near to the optimum for photovoltaic conversion, suggesting that Sb2S3 nanoribbons could be used in solar energy and photoelectronic applications.     

Evolution of crystalline structure in SnS thin films prepared by chemical deposition

Crystal structure and morphology undergo significant evolution in thin films of tin(II) sulfide prepared by chemical deposition, over a narrow interval of bath temperature of 20–40 °C, but has not been recognized in previous studies. The chemical bath is constituted using tin(II) chloride, triethanolamine, ammonia(aq.) and thioacetamide. At bath temperature of 20 °C, the deposition rate of the film is 10 nm/h; and at 24 h, a film of thickness 260 nm is obtained. This film is compact and with a predominantly cubic (Cub-) crystalline structure. At 40 °C, the deposition rate is 25 nm/h, and a film of 600 nm in thickness is deposited in 24 h. However, this film has evolved into vertically stacked platelets of orthorhombic (OR-) crystalline structure. The transition from compact-to-platelet morphology as well as from Cub-to-OR-crystalline structure is observed near a deposition temperature, 35 °C. The Cub-SnS has a characteristic high optical band gap, 1.67 eV (direct gap; forbidden transitions) with an electrical conductivity, 10⁻⁷(Ω cm)⁻¹; both properties being un-affected when films are heated at 300 °C in a nitrogen ambient. In OR-SnS, the band gap is 1.1 eV (indirect gap; allowed transitions). The electrical conductivity of such films is notably higher, 10⁻⁴ (Ω cm)⁻¹, which increases further by an order of magnitude when the films have been heated at 300 °C in nitrogen.     

Epitaxial electrodeposition of cadmium selenide thin films on indium phosphide single crystal

Epitaxial CdSe layers were electrodeposited from a standard aqueous electrolyte onto a (111) InP single crystal. By using various characterization techniques (RHEED, XRD, HREM,...) it was demonstrated that a good epitaxy can be achieved by monitoring the experimental parameters very carefully, in particular the selenium concentration in the electrolyte and the deposition potential. For optimum conditions, the composition of the semiconducting layer is close to stoichiometry and the carrier density is around 1 × 10¹⁷ cm⁻³. Received: 23 January 1992 / Accepted: 3 March 1997     

Epitaxial electrodeposition of Fe(3)O(4) thin films on the low-index planes of gold

Half-metallic ferrimagnetic materials such as Fe(3)O(4) are of interest for use in spintronic devices. These devices exploit both the spin and charge of an electron in spin-dependent charge transport. Epitaxial thin films of Fe(3)O(4) have been grown on the three low-index planes of gold by electrodeposition. On Au(110), a [110] Fe(3)O(4) orientation that is aligned with the underlying Au(110) substrate is observed. Thin films on Au(100) grow with three different orientations: [100], [111], and [511]. On Au(111), both [111] and [511] orientations of Fe(3)O(4) are observed. The [511] orientations are the result of twinning on [111] planes. A polarization value of approximately -40% at the Fermi level was measured by spin-polarized photoemission at room temperature for a thin film on Au(111).     

生物分子辅助溶剂热合成硫化锑纳米棒

以SbCl3和L-胱氨酸为反应原料,采用溶剂热法在170℃反应12h,制得硫化锑(Sb2S3)纳米棒.X射线衍射(XRD)、能量分散光谱(EDS)和X射线光电子能谱(XPS)研究表明所得产物为典型的Sb2S3正交结构.场发射扫描电子显微镜(FESEM)和透射电子显微镜(TEM)研究显示,Sb2S3纳米棒长为3～6μm,平均直径约为150nm.讨论了不同反应时间对Sb2S3的形成及其形貌的影响,并根据实验结果对所合成的一维纳米棒可能的形成机理进行了简单的探讨.     

Direct electrodeposition of Cu2Sb for lithium-ion battery anodes

We describe the direct single potential electrodeposition of crystalline Cu2Sb, a promising anode material for lithium-ion batteries, from aqueous solutions at room temperature. The use of citric acid as a complexing agent increases the solubility of antimony salts and shifts the reduction potentials of copper and antimony toward each other, enabling the direct deposition of the intermetallic compound at pH 6. Electrodeposition of Cu2Sb directly onto conducting substrates represents a facile synthetic method for the synthesis of high quality samples with excellent electrical contact to a substrate, which is critical for further battery testing.     

Epitaxial electrodeposition of Prussian blue thin films on single-crystal Au(110)

Epitaxial Prussian blue (PB) films are deposited electrochemically onto a Au(110) substrate. High-resolution X-ray diffraction shows that the PB films have a [111] out-of-plane orientation. The very large lattice mismatch of 148% is reduced to about 1% by the formation of (1 x 2)PB(111)[onemacr;10]//(6 x 5)Au(110)[onemacr;10] and (1 x 2)PB(111)[01onemacr;]//(6 x 5)Au(110)[onemacr;10] epitaxial relationships. Peaks in the cyclic voltammogram of PB on Au(110) are sharper than those on polycrystalline Au, consistent with higher structural order and a single out-of-plane orientation. The development of epitaxial films of PB and PB analogues will allow the measurement of the orientation-dependent properties of these molecular magnets. It will also open the door to the development of novel molecular spintronic devices, such as those which exhibit spin-dependent electron transfer.