Photoelectrochemical water splitting using a Cu(In,Ga)Se2 thin film

The effects of surface modification and reaction conditions on the photoelectrochemical properties of polycrystalline Cu(In,Ga)Se₂ (CIGS) thin films for water splitting were studied. CIGS modified with platinum particles (Pt/CIGS) generated a cathodic photocurrent at potentials up to + 0.4 V vs. RHE at pH = 9.5. The photocurrent was stable for 16 h, which resulted in a turnover number of over 500. A CdS-inserted film (Pt/CdS/CIGS) had significantly improved properties compared to Pt/CIGS: a 0.3 V higher onset potential of cathodic photocurrent and a three-fold increase in the quantum efficiency. Our results suggest the feasibility of CIGS as a photocathode for biphotoelectrochemical water splitting.     

Detection of trace impurities in Cu(In, Ga)Se2 thin film solar cells by laser ablation ICP-MS

CIGS solar cells (CIGS: CuInSe₂, doped with gallium) on flexible glass fibre substrates were investigated to determine a possible migration of compounds from the substrate through the back contact layer into the absorber layer. We employed laser ablation ICP-MS to perform depth profile analysis as this technique combines ease of sample preparation with high sensitivity and moderate depth resolution. Careful optimization of the fluence and repetition rate of the laser system was necessary to ensure sufficient depth resolution in order to be able to relate the transient signals to the different layers. The results show that apart from sodium and small amounts of titanium no elements have migrated into the absorber layer. This was confirmed by micro-PIXE measurements on cross sections of the cell.     

Design of energy band alignment at the Zn(1-x)Mg(x)O/Cu(In,Ga)Se2 interface for Cd-free Cu(In,Ga)Se2 solar cells

The electronic band structure at the Zn(1-x)Mg(x)O/Cu(In(0.7)Ga(0.3))Se(2) interface was investigated for its potential application in Cd-free Cu(In,Ga)Se(2) thin film solar cells. Zn(1-x)Mg(x)O thin films with various Mg contents were grown by atomic layer deposition on Cu(In(0.7)Ga(0.3))Se(2) absorbers, which were deposited by the co-evaporation of Cu, In, Ga, and Se elemental sources. The electron emissions from the valence band and core levels were measured by a depth profile technique using X-ray and ultraviolet photoelectron spectroscopy. The valence band maximum positions are around 3.17 eV for both Zn(0.9)Mg(0.1)O and Zn(0.8)Mg(0.2)O films, while the valence band maximum value for CIGS is 0.48 eV. As a result, the valence band offset value between the bulk Zn(1-x)Mg(x)O (x = 0.1 and x = 0.2) region and the bulk CIGS region was 2.69 eV. The valence band offset value at the Zn(1-x)Mg(x)O/CIGS interface was found to be 2.55 eV after considering a small band bending in the interface region. The bandgap energy of Zn(1-x)Mg(x)O films increased from 3.25 to 3.76 eV as the Mg content increased from 0% to 25%. The combination of the valence band offset values and the bandgap energy of Zn(1-x)Mg(x)O films results in the flat (0 eV) and cliff (-0.23 eV) conduction band alignments at the Zn(0.8)Mg(0.2)O/Cu(In(0.7)Ga(0.3))Se(2) and Zn(0.9)Mg(0.1)O/Cu(In(0.7)Ga(0.3))Se(2) interfaces, respectively. The experimental results suggest that the bandgap energy of Zn(1-x)Mg(x)O films is the main factor that determines the conduction band offset at the Zn(1-x)Mg(x)O/Cu(In(0.7)Ga(0.3))Se(2) interface. Based on these results, we conclude that a Zn(1-x)Mg(x)O film with a relatively high bandgap energy is necessary to create a suitable conduction band offset at the Zn(1-x)Mg(x)O/CIGS interface to obtain a robust heterojunction. Also, ALD Zn(1-x)Mg(x)O films can be considered as a promising alternative buffer material to replace the toxic CdS for environmental safety.     

Effects of silver-doping on properties of Cu(In,Ga)Se2 films prepared by Cu In Ga precursors

The AgCuInGa alloy precursors with different Ag concentrations are fabricated by sputtering an Ag target and a CuInGa target. The precursors are selenized in the H₂Se-containing atmosphere to prepare (Ag,Cu)(In,Ga)Se₂(ACIGS) absorbers. The beneficial effects of Ag doping are demonstrated and their mechanism is explained. It is found that Ag doping significantly improves the films crystallinity. This is believed to be due to the lower melting point of chalcopyrite phase obta...     

Evolution of Cu(In,Ga)Se2 surfaces under water immersion monitored by X-ray photoelectron spectroscopy

Cu(In,Ga)Se₂ absorbers were immerged in deionized water for different times, and specific chemical evolutions were monitored thanks to X-ray photoemission spectroscopy. Cu(In,Ga)Se₂ related dissolution products were studied in water through induced coupled plasma optical emission spectroscopy. From those analyses, specific surface network disorganization was observed, with Cu migration towards the surface, leading to different kinetics of oxidation and dissolution for each element that could be quantified.     

Cu(In,Ga)Se_2薄膜组成表面分析准确测量国际关键比对

中国计量科学研究院参加了国际关键比对K129,采用X射线光电子能谱仪(XPS)建立了测量薄膜太阳能电池材料铜铟镓硒(CIGS)薄膜组成和深度成分分布的有效方法。采用合适的条件,对CIGS薄膜进行深度剖析,提出并完善了一套XPS深度剖析数据处理方法(全计数法和相对灵敏度因子法),对薄膜组成进行了准确测量。结果表明,该方法的测量重复性良好,5次测量的相对标准偏差(RSD)均小于2%,测量扩展不确定度优于4%,与其他国家计量院的结果取得等效一致。对比研究了不同灵敏度因子来源(由参考样品获得、仪器数据库的3种来源)对CIGS薄膜组成测量结果的影响,结果表明,仪器厂商数据库自修正的灵敏度因子最接近于参考样品,可较好地对CIGS薄膜进行原子含量测量。该方法可推广用于表面分析设备深度剖析薄膜样品时定量计算薄膜成分,提高测量薄膜成分的准确度,为薄膜太阳能电池材料研发和产业化提供参考依据。     

Preparation and characterization of Li4Ti5O12 thin films by rapid thermal annealing

Li₄Ti₅O₁₂ thin films were prepared by solution deposition followed by rapid thermal annealing (RTA). The structural and electrochemical properties of the film were comparatively studied with the one prepared by conventional furnace annealing (CFA) through X-ray diffraction, scanning electron microscopy, cyclic voltammetry, galvanostatic lithium insertion–extraction experiments, and electrochemical impedance spectroscopy. The results show that the film prepared by RTA is homogeneous, crack-free, and pure spinel phase, and its grain size is smaller than that of the film prepared by CFA. The lithium extraction capacity of the film prepared by RTA is 59.5 μAh cm^?2 μm^?1, which is higher than 55.9 μAh cm^?2 μm^?1 of the film prepared by CFA. The capacity loss of the film prepared by RTA after being cycled 50 times is 3.1 %, which is 3.2 % lower than that of 6.3 % for the film prepared by CFA.     

宽带隙Cu(In,Al)Se2薄膜的制备及表征

以特殊脉冲电沉积方法制备CuInSe2(CIS)前驱体薄膜, 通过真空蒸镀法在CIS薄膜上沉积Al膜, 经硒化退火后在氧化铟锡(ITO)基底上制备了Cu(InAl)Se2(CIAS)薄膜. 采用扫描电子显微镜(SEM)、X射线能谱(EDS)、X射线衍射(XRD)、X射线光电子能谱(XPS)、紫外-可见吸收光谱(UV-Vis)对其形貌、结构、成分及光学吸收性质进行了表征. 结果表明, 制备的CIAS薄膜颗粒均匀, 表面平整致密, 呈黄铜矿结构. 薄膜在可见光区具有良好的吸收, 带隙约为1.65 eV.     

Spectroscopic investigation of the deeply buried Cu(In,Ga)(S,Se)2/Mo interface in thin-film solar cells

The Cu(In,Ga)(S,Se)(2)Mo interface in thin-film solar cells has been investigated by surface-sensitive photoelectron spectroscopy, bulk-sensitive x-ray emission spectroscopy, and atomic force microscopy. It is possible to access this deeply buried interface by using a suitable lift-off technique, which allows us to investigate the back side of the absorber layer as well as the front side of the Mo back contact. We find a layer of Mo(S,Se)(2) on the surface of the Mo back contact and a copper-poor stoichiometry at the back side of the Cu(In,Ga)(S,Se)(2) absorber. Furthermore, we observe that the Na content at the Cu(In,Ga)(S,Se)(2)Mo interface as well as at the inner grain boundaries in the back contact region is significantly lower than at the absorber front surface.     

Soluble precursors for CuInSe2, CuIn(1-x)Ga(x)Se2, and Cu2ZnSn(S,Se)4 based on colloidal nanocrystals and molecular metal chalcogenide surface ligands

We report a new platform for design of soluble precursors for CuInSe(2) (CIS), Cu(In(1-x)Ga(x))Se(2) (CIGS), and Cu(2)ZnSn(S,Se)(4) (CZTS) phases for thin-film potovoltaics. To form these complex phases, we used colloidal nanocrystals (NCs) with metal chalcogenide complexes (MCCs) as surface ligands. The MCC ligands both provided colloidal stability and represented essential components of target phase. To obtain soluble precursors for CuInSe(2), we used Cu(2-x)Se NCs capped with In(2)Se(4)(2-) MCC surface ligands or CuInSe(2) NCs capped with {In(2)Cu(2)Se(4)S(3)}(3-) MCCs. A mixture of Cu(2-x)Se and ZnS NCs, both capped with Sn(2)S(6)(4-) or Sn(2)Se(6)(4-) ligands was used for solution deposition of CZTS films. Upon thermal annealing, the inorganic ligands reacted with NC cores forming well-crystallized pure ternary and quaternary phases. Solution-processed CIS and CZTS films featured large grain size and high phase purity, confirming the prospects of this approach for practical applications.     

Synthesis and characterization of Cu(In(x)B(1-x))Se2 nanocrystals for low-cost thin film photovoltaics

Chalcopyrite quaternary semiconductor Cu(In(x)B(1-x))Se(2) nanocrystals have been successfully prepared via a relatively simple and convenient solvothermal route. The effect of different solvents on the formation of the product also indicates that diethylenetriamine is the optimal solvent for this reaction. The device parameters for a single junction Cu(In(x)B(1-x))Se(2) solar cell under AM1.5G are as follows: an open circuit voltage of 265 mV, a short-circuit current of 25.90 mA/cm(2), a fill factor of 34%, and a power conversion efficiency of 2.34%. Based on a series of comparative experiments under different reaction conditions, the probable formation mechanism of crystal Cu(In(x)B(1-x))Se(2) nanorods is proposed.     

Depth profiling with SNMS and SIMS of Zn(O,S) buffer layers for Cu(In,Ga)Se2 thin‐film solar cells

Zn(O,S) is a promising candidate to replace the commonly used CdS buffer layer for Cu(In,Ga)Se₂ (CIGS) thin‐film solar cells due to its non‐toxicity and its potential to enhance the conversion efficiency of the CIGS solar cell. The composition of chemical bath deposited (CBD) and sputtered Zn(O,S) layers with thicknesses well below 100 nm was determined by sputtered neutral and secondary ion mass spectrometry (SNMS and SIMS). Despite numerous mass interferences of double‐charged atoms and dimers with single Zn, O and S isotopes, we developed an evaluation algorithm for quantification of SNMS depth profiles of Zn(O,S) layers. In particular, the superposition of double‐charged S and Zn atoms with O and S isotopes is accounted for numerically in the quantification procedure. For sputtered Zn(O,S) layers, the S/(S + O) atomic ratio and the vertical composition profile can be controlled by the O₂ content in the gas flow and the substrate temperature during sputtering whereas for CBD Zn(O,S) the S/(S + O) ratio is constant around 0.7–0.8. A Cu‐depleted layer of about 5 nm on the CIGS surface after buffer deposition was observed for both preparation methods. With negative SIMS, we found more hydroxides and carbon residues in CBD Zn(O,S) as compared to sputtered layers. Best cell performance with sputtered Zn(O,S) layers was achieved for S/(S + O) ratios of 0.25–0.40, yielding efficiencies up to 13%. Our solar cells with CBD Zn(O,S) buffers exhibit higher efficiencies due to an improved open‐circuit voltage. Copyright © 2013 John Wiley & Sons, Ltd.     

Exfoliation methods for compositional and electronic characterization of interfacial Mo(Sex,Sy) in Cu(In,Ga)(Se,S)2 solar cells by X-ray and UV photoelectron spectroscopy

Mo(Se_xS_y) is a transition metal dichalcogenide typically applied as a back contact interlayer in Cu(In,Ga)(Se,S)₂ (CIGSSe) solar cells. Band alignment at the buried Mo/CIGSSe junction mediated by Mo(Se_xS_y) is important for current transport and enables quasi-ohmic behavior between the CIGSSe absorber and the Mo back electrode. Furthermore, the S/(Se + S) ratio is a crucial parameter that determines the height of the valence band offset at the CIGSSe/Mo(Se_xS_y) interface. Because the interlayer is formed during rapid thermal processing, an MoSe₂ or MoS₂ thin film grown on free substrate surfaces will not be representative for a realistic solar cell device. Thus, for fundamental thin-film material analysis, as well as functional characterization and modeling, appropriate preparation and analytical techniques are required in order to prevent artifacts. In principal, the weak van der Waals forces between two-dimensional stacked Mo(Se_xS_y) sheets allow the implementation of exfoliation procedures to generate free Mo(Se_xS_y) surfaces out of CIGSSe solar cell layer stacks. In this article, two different exfoliation-based Mo(Se_x,S_y) preparation methods are investigated and evaluated with respect to subsequent surface analytical characterization by X-ray and ultraviolet photoelectron spectroscopy. A special focus is laid on an artifact-free characterization of chemical and electronical properties of the exposed layers for a number of samples. In a first instance, the compositional Se/S and (Se + S)/Mo ratios at the surface are quantitatively analyzed on the basis of dedicated peak-fitting routines. Artifacts from carbonaceous contamination due to different exfoliation glues can be prevented through a detailed comparative analysis of carbon 1s and KLL Auger peaks. Furthermore, a significant surface band bending is observed that can be reduced by low-energy Ar ion in situ sputtering. A simple model for the sputter removal of a charged surface layer is presented, which allows to approximately calculate the absolute valence band maximum (VBM) positions required for band alignment and numerical device simulations. The presented exfoliation surface analysis methodology is important for the whole CIGS(Se) solar cell community and may be of general interest for emerging applications of further 2D transition metal dichalcogenides as well.     

一步法电化学沉积Cu(In1-x,Gax)Se2薄膜的特性

在CuCl2、InCl3、GaCl3及H2SeO3组成的酸性水溶液电沉积体系中, 对Mo/玻璃衬底上一步法电沉积Cu(In1-x, Gax)Se2(简写为CIGS)薄膜进行了研究. 为了稳定溶液的化学性质, 在溶液中加入邻苯二甲酸氢钾和氨基磺酸作为pH缓冲剂, 将溶液的pH值控制在约2.5, 并提高薄膜中Ga的含量. 通过大量实验优化了溶液组成及电沉积条件, 得到接近化学计量比贫Cu 的CIGS薄膜(当Cu与In+Ga的摩尔比为1时, 称为符合化学计量比的CIGS薄膜; 当其比值为0.8-1时, 称为贫Cu或富In的CIGS 薄膜)预置层, 薄膜表面光亮、致密、无裂纹. 利用循环伏安法初步研究了一步法电沉积CIGS薄膜的反应机理, 在沉积过程中, Se4+离子先还原生成单质Se, 再诱导Cu2+、Ga3+和In3+发生共沉积. 电沉积CIGS薄膜预置层在固态硒源280 ℃蒸发的硒气氛中进行硒化再结晶, 有效改善了薄膜的结晶结构, 且成份基本不发生变化,但是表面会产生大量的裂纹.     

Synthesen und Molekülstrukturen von [Cu20Ga10Cl4Se23(PEt2Ph)12] und [Cu14In6Se7(iPrSe)18]

Syntheses and Structures of [Cu₂₀Ga₁₀Cl₄Se₂₃(PEt₂Ph)₁₂] and [Cu₁₄In₆Se₇(iPrSe)₁₈] CuCl and GaCl₃ react with Se(SiMe₃)₂ in thf solution to yield in the presence of PEt₂Ph [Cu₂₀Ga₁₀Cl₄Se₂₃(PEt₂Ph)₁₂] ( 1 ). Reaction of CuCl, InCl₃ and TMEDA with iPrSeSiMe₃ in DME results in the crystallisation of [Cu₁₄In₆Se₇(iPrSe)₁₈] ( 2 ). The structures of 1 and 2 were determined by X‐ray single crystal structure analysis and display two new types of molecular clusters formed by the elements of group 11, 13, and 16. However, both cluster structures show no analogy to the structures of the related bulk phases.     

Band gap varied cuprous oxide (Cu<Subscript>2</Subscript>O) thin films as a tool for glucose sensing

Cuprous oxide (Cu₂O) thin films have been deposited onto fluorine doped tin oxide (FTO) glass substrates by using electrochemical route. The structural, morphological, and chemical composition of the deposited films have been studied by using X-ray diffraction (XRD), Scanning electron microscopy (SEM) and Energy dispersive x-ray spectroscopy (EDAX) techniques respectively. The optical studies have been carried out by using UV-Vis spectroscopy. The effect of potential, pH and bath temperature onto absorption and band gap of Cu₂O thin films have been studied. The highest sensitivity 6.25 mA·mM·cm^{- 2} is observed for the thin films which shows glucose concentration 7 mM in 0.1 M NaOH solution. The results indicates Cu₂O is promising material for glucose sensor with high sensitivity, high stability, and repeatability.

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Graphical abstract The surface morphology of Cu₂O thin films was found to be tip-truncated octahedral. The films were  prepared by electrodeposition. The Cu₂O thin films were used to construct low cost, highly sensitive and stable glucose sensor.

     

Band gap bowing of nanocrystalline Zn(1−x)CaxO thin films for blue and ultraviolet optoelectronic applications

Alloying materials having different band gaps is a tool to tailor the optical energy gaps of semiconducting materials. In the present study, the effect of alloying ZnO with CaO was investigated. Thin films of Zn_(1−x)Ca_xO (0 ≤ x ≤ 0.20) were deposited on glass substrates by spray pyrolysis technique. All the films possessed nanocrystalline grains and crystallinity deteriorated with increase in Ca²⁺ substitution level. Elemental composition analysis confirmed the presence of Ca in the samples. Films showed good optical transmission in the visible and near infrared region and the absorption edge blue-shifted with Ca²⁺ substitution. Optical energy gap enhanced by 9.89% upon 20% Ca²⁺ substitution. Photoluminescence analysis also confirmed band gap broadening with mesovalent cation substitution.     

Effect of heterovalent substitution on the electrical and optical properties of ZnO(M) thin films (M = Ga,In)

Films of undoped ZnO and zinc oxide doped with gallium and indium (ZnO(Ga) and ZnO(In)) have been prepared by the spin-coating method with the subsequent annealing at 500°C. Phase composition, microstructure, conductivity, and optical properties of the films have been investigated depending on the content of gallium and indium in them.