Antiphase disorder in GaAs/Ge heterostructures for solar cells

Antiphase disorder in metal organic vapour phase epitaxy grown GaAs/(100)Ge heterostructures has been studied both in as-grown materials and in GaAs solar cells by chemical etching, transmission electron microscopy, and cathodoluminescence. All the samples are single domains at the surface due to the self-annihilation of antiphase domains whose size decreases as the misorientation angle increases. Completely antiphase domain-free epitaxy has been achieved for substrate miscuts greater than 3 degrees off towards [111]. A reversal in sublattice location has been found in the GaAs layers varying the misorientation angle and the growth temperature. A model to explain this result has been proposed based on the role of surface steps in the nucleation process. Strong interaction between antiphase boundaries and misfit dislocations has been found in all the heterostructures. In solar cells antiphase domains have been observed in high densities in the initial layer of GaAs deposited on Ge. The successful realisation of high efficiency solar cells is due to the overgrowth of these domains by single phase material over most of the wafer area.     

Heterostructures overgrown on GaAs corner substrates

By choosing suitable crystal facets we are able to epitaxially overgrow a precleaved corner-substrate. We are using GaAs (1 1 0)-like facets and growth conditions such that no accumulation or depletion of deposited material near the corner is observed, avoiding morphological changes at the corner during the growth process. So we achieve high-quality layer growth across the corner. With this technique we demonstrate a new type of quantum confinement structure consisting of a GaAs/AlGaAs heterostructure overgrown on top of this precleaved corner-substrate.     

Orientation-patterned templates GaAs/Ge/GaAs for nonlinear optical devices. II. Investigation of properties

GaAs/Ge/GaAs heterostructures in which GaAs layer lattices are rotated at a right angle in the substrate plane are studied. High quality of heterostructures is confirmed by X-ray diffraction and photoluminescence methods.     

Temperature Dependence of Polaron Cyclotron Resonance Mass in GaAs/AlGaAs Heterostructures

The temperature dependence of polaron cyclotron resonance mass in GaAs/AlGaAs heterostructures is reinvestigated theoretically. By taking into account the electron-longitudinal-optic phonon interaction with temperature-dependent many-body effects, the conduction band non-parabolicity, and the influence of nonzero magnetic field, a good agreement with experiment is obtained.     

Orientation-patterned templates GaAs/Ge/GaAs for nonlinear optical devices. I. Molecular beam epitaxy

GaAs/Ge/GaAs heterostructures in which the GaAs layer lattice on Ge is rotated at a right angle to the substrate plane are grown by molecular-beam epitaxy (MBE). Such heterostructures are grown in different epitaxial setups for GaAs and for Ge with wafer transfer through air tor the first time. It is proposed to use surfactants (Bi, Sb) to control GaAs layer nucleation on Ge.     

Investigation of the Structural Perfection of Thin-Film InAlGaPAs/GaAs Heterostructures

The influence of growth conditions on the structural perfection of thin-film InAlGaPAs/GaAs heterostructures is discussed. The main determined growth parameters are the growth temperature and its gradient, liquid-zone thickness, matching between lattice parameters and the thermal expansion coefficients of the layer and substrate, and dislocation density in the substrate.     

准二维光学系统的调制不稳定性分析

本文利用时间相关的变分法对准二维的非线性薛定谔方程平面波的调制不稳定性进行了研究。在拉格朗日变分的框架下推导出相与振幅的演化方程,进而对线性化扰动方程的解进行了数值模拟,直观地展示了平面波的调制不稳定性。最后通过对能量方程有效势的分析,严格地得到了平面波解调制不稳定的判断准则。     

Two-Dimensional Triplet Magnetoexcitons and a Magnetofermionic Condensate in the GaAs/AlGaAs Heterostructures

A fundamentally new collective state, namely, the magnetofermionic condensate, is discovered during photoexcitation of a sufficiently dense gas of long-lived triplet cyclotron magnetoexcitons in a twodimensional Hall insulator with a high electron mobility, a filling factor of ν = 2, and temperatures of T < 1 K. The condensed phase coherently interacts with an external electromagnetic field, exhibits superradiant properties in the recombination of correlated condensate electrons with heavy holes in the valence band, and spreads nondissipatively in the layer of a two-dimensional electron gas to macroscopical large distances, transferring an integer spin. The observed effects are explained in terms of a coherent condensate in a nonequilibrium system of two-dimensional fermions with a fully quantized energy spectrum, in which a degenerate ensemble of long-lived triplet magnetoexcitons obeying the Bose statistics is present.

     

高温处理工艺对低压MOCVD外延GaAs/Ge太阳电池的影响

采用自制的低压金属有机化学汽相淀积LP-MOCVD设备,在Ge衬底(100)面向(111)偏9°外延生长出GaAs电池结构,对电池材料进行了X射线衍射分析另外,对由此材料制成的太阳电池进行了性能测试,测试结果表明,Ge衬底的高温处理工艺对GaAs/Ge太阳电池的电流电压特性有一定的影响试验表明,在600～700℃之间高温处理效果较好。     

Charge accumulation in Ge quantum dots in a GaAs/ZnSe/QD-Ge/ZnSe/Ge floating gate transistor structure

A GaAs/ZnSe/QD-Ge/ZnSe/Ge germanium-quantum-dot floating-gate transistor structure is obtained and investigated by molecular beam epitaxy. It has been shown that a positive change in the channel current is observed upon light illumination with wavelengths longer than 0.5 μm and a negative change is observed for shorter wavelengths, which is associated with charging of quantum dots. Measurements of relaxation curves after switching off the illumination show that the decay of the current lasts for from tens of seconds to several hours, depending on the temperature of the sample. The changes in the channel current and relaxation curves indicated above are explained based on the existence of three types of transitions in quantum dots upon radiation absorption with allowance made for the variation of the channel state near the heteroboundary from depletion to inversion as a result of charge accumulation in quantum dots.     

用于红外探测的极度非简并非线性光学

半导体中的双光子吸收(2PA)与能隙的三次方的倒数(Eg-3)成正比,这一关系限制了在宽带隙半导体中获得双光子吸收系数。但是已知在输入波长迥异的高度非简并情况下,双光子吸收率较简并状态会有大幅提升。在飞秒和皮秒脉冲下的泵浦探测传输实验中证实了几种直接能隙半导体具有这种性质。发现在许多直接能隙半导体中,非简并双光子吸收率较简并情况下可增强约100倍。在GaAs中,观察到双光子吸收系数达到1cm/MW,这么大的系数以前只在窄带半导体如InSb中观察到过。基于这种作用可以利用传统的半导体光电二极管获得敏感的选通探测。采用标准的GaN和GaAs光电二极管和高达14∶1的能量比的极度非简并光子证实了此技术。此外,还采用强紫外选通脉冲探测弱红外辐射,如采用GaN光电二极管,最小可探测红外脉冲能量可低至20pJ,而现有的标准制冷型MCT探测器的最小可探测能量为200pJ。我们现在还证实这种方法也可在连续波探测中应用。值得注意的是,这个过程没有用到类似χ(2)上转换的红外晶体或相位匹配。在本报告中将介绍怎样将这种探测技术用于其他半导体,以及如何优化器件的几何结构以满足实用化探测要求。     

量子阱非线性光学研究进展

综述了量子阱非线性光学领域近年来实验工作的进展，重点介绍了共振增强的二阶和三阶非线性效应、光折变效应、量子阱光调制器和ＩＶ族材料的非线性过程，指出该领域发展迅速，应用前景十分广阔。     

Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices

In this paper an analysis of tendencies of Ge on Si quantum dots nanoheterostructures’ usage in different optoelectronic devices such as, for example, solar cells and photodetectors of visible and infra-red regions is carried out; a complex mathematical model for calculation of dependency on growth conditions of self-organized quantum dots of Ge on Si grown using the method of molecular beam epitaxy parameters is described. Ways of segregation effect and underlying layers’ influence are considered. It is shown that for realization of good device characteristics quantum dots should have high density, small sizes, uniformity, and narrow size distribution function. The desirable parameters of arrays of square and rectangular quantum dots for device application are attainable under certain growth conditions.     

Quantum Computation with Nonlinear Optics

We propose a scheme of quantum computation with nonlinear quantum optics. Polarization states of photons are used for qubits. Photons with different frequencies represent different qubits. Single qubit rotation operation is implemented through optical elements like the Faraday polarization rotator. Photons are separated into different optical paths, or merged into a single optical path using dichromatic mirrors. The controlled-NOT gate between two qubits is implemented by the proper combination of parametric up and down conversions. This scheme has the following features： （1） No auxiliary qubits are required in the controlled-NOT gate operation; （2） No measurement is required in the course of the computation; （3） It is resource efficient and conceptually simple.     

溶胶-凝胶法制备GaInP/GaAs/Ge三结太阳能电池梯度折射率减反膜

为了减少太阳能电池表面反射,提高多结太阳能电池效率,针对GaInP/GaAs/Ge三结太阳能电池和AM0光谱,设计了折射率梯度排列的四层减反膜系结构.利用溶胶-凝胶技术,通过对材料折射率的定向调节,制备了折射率梯度排列的TiO_2/ZrO_2/酸性SiO_2/碱性SiO_2四层减反膜.实验结果表明,镀膜后的三结太阳能电池在300~1 700 nm波长范围内的加权平均反射率由原先的28.58%降低至4.86%,最高反射率由46.35%降低至15.45%.     

非线性热晕效应自适应光学位相补偿

采用已建立的一套较完整的包括真实自适应光学位相补偿系统仿真的高能激光大气传输的数值模拟程序，对非线性热晕应相偿进行了计算。分析了非线性热晕效应位相补偿不稳定性的基本特征。     

Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface

Heterostructures of the “strained Ge film/artificial InGaAs layer/GaAs substrate” type have been grown by molecular beam epitaxy. A specific feature of these structures is that the plastically relaxed (buffer) InGaAs layer has the density of threading dislocations on a level of 10⁵–10⁶ cm⁻². These dislocations penetrate into the strained Ge layer to become sources of both 60° and 90° (edge) misfit dislocations (MDs). Using the transmission electron microscopy, both MD types have been found at the Ge/InGaAs interface. It has been shown that the presence of threading dislocations inherited from the buffer layer in a tensile-strained Ge film favors the formation of edge dislocations at the Ge/InGaAs interface even in the case of small elastic deformations in the strained film. Possible mechanisms of the formation of edge MDs have been considered, including (i) accidental collision of complementary parallel 60° MDs propagating in the mirror-tilted {111} planes, (ii) induced nucleation of a second 60° MD and its interaction with the primary 60° MD, and (iii) interaction of two complementary MDs after a cross-slip of one of them. Calculations have demonstrated that a critical layer thickness (h _c ) for the appearance of edge MDs is considerably smaller than h _c for 60° MDs.