New ternary germanides La4Mg5Ge6 and La4Mg7Ge6: crystal structure and chemical bonding

The synthesis, structural characterization, and chemical-bonding peculiarities of the two new polar lanthanum-magnesium germanides La(4)Mg(5)Ge(6) and La(4)Mg(7)Ge(6) are reported. The crystal structures of these intermetallics were determined by single-crystal X-ray diffraction analysis. The La(4)Mg(5)Ge(6) phase crystallizes in the orthorhombic Gd(4)Zn(5)Ge(6) structure type [Cmc2(1), oS60, Z = 4, a = 4.5030(7) ?, b = 20.085(3) ?, c = 16.207(3) ?, wR2 = 0.0451, 1470 F(2) values, 93 variables]. The La(4)Mg(7)Ge(6) phase represents a new structure type with a monoclinic unit cell [C2/m, mS34, Z = 2, a = 16.878(3) ?, b = 4.4702(9) ?, c = 12.660(3) ?, β = 122.25(3)°, wR2 = 0.0375, 1466 F(2) values, 54 variables]. Crystallographic analysis together with linear muffin-tin orbital band structure calculations reveals the presence of strongly bonded 3D polyanionic [Mg-Ge] networks balanced by positively charged La atoms in both stoichiometric compounds. The La(4)Mg(5)Ge(6) compound is related to Zintl phases, showing a prominent density of states pseudogap at the Fermi level. A distinctive feature of the La(4)Mg(5)Ge(6) structure is the presence of Ge-Ge covalent dumbbells; in La(4)Mg(7)Ge(6), the higher Mg content generates a polyanionic network consisting exclusively of Mg-Ge heterocontacts. Nevertheless, the frameworks of the two phases are structurally similar, as is highlighted in this work.     

REMGa3Ge and RE3Ni3Ga8Ge3 (M = Ni, Co; RE = rare-earth element): new intermetallics synthesized in liquid gallium. X-ray, electron, and neutron structure determination and magnetism

New quaternary intermetallic phases REMGa(3)Ge (1) (RE = Y, Sm, Tb, Gd, Er, Tm; M = Ni, Co) and RE(3)Ni(3)Ga(8)Ge(3) (2) (RE = Sm, Gd) were obtained from exploratory reactions involving rare-earth elements (RE), transition metal (M), Ge, and excess liquid Ga the reactive solvent. The crystal structures were solved with single-crystal X-ray and electron diffraction. The crystals of 1 and 2 are tetragonal. Single-crystal X-ray data: YNiGa(3)Ge, a = 4.1748(10) A, c = 23.710(8) A, V = 413.24(2) A(3), I4/mmm, Z = 4; Gd(3)Ni(3)Ga(8)Ge(3), a = 4.1809(18) A, c = 17.035(11) A, V = 297.8(3) A(3), P4/mmm, Z = 1. Both compounds feature square nets of Ga atoms. The distribution of Ga and Ge atoms in the REMGa(3)Ge was determined with neutron diffraction. The neutron experiments revealed that in 1 the Ge atoms are specifically located at the 4e crystallographic site, while Ga atoms are at 4d and 8g. The crystal structures of these compounds are related and could be derived from the consecutive stacking of disordered [MGa](2) puckered layers, monatomic RE-Ge planes and [MGa(4)Ge(2)] slabs. Complex superstructures with modulations occurring in the ab-plane and believed to be associated with the square nets of Ga atoms were found by electron diffraction. The magnetic measurements show antiferromagnetic ordering of the moments located on the RE atoms at low temperature, and Curie-Weiss behavior at higher temperatures with the values of mu(eff) close to those expected for RE(3+) free ions.     

Electron-deficient Eu(6.5)Gd(0.5)Ge6 intermetallic: a layered intergrowth phase of the Gd5Si4- and FeB-type structures

A novel electron-poor Eu(6.5)Gd(0.5)Ge? compound adopts the Ca?Sn?-type structure (space group Pnma, Z = 4, a = 7.5943(5) ?, b = 22.905(1) ?, c = 8.3610(4) ?, and V = 1454.4(1) ?3). The compound can be seen as an intergrowth of the Gd?Si?-type (Pnma) R?Ge? (R = rare earth) and FeB-type (Pnma) RGe compounds. The phase analysis suggests that the Eu(7-x)Gd(x)Ge? series displays a narrow homogneity range of stabilizing the Ca?Sn? structure at x ≈ 0.5. The structural results illustrate the structural rigidity of the 2(∝)[R?X?] slabs (X = p-element) and a possibility for discovering new intermetallics by combining the 2(∝)[R?X?] slabs with other symmetry-approximate building blocks. Electronic structure analysis suggests that the stability and composition of Eu(6.5)Gd(0.5)Ge? represents a compromise between the valence electron concentration, bonding, and existence of the neighboring EuGe and (Eu,Gd)?Ge? phases.     

Gd5-xYxTt4 (Tt = Si or Ge): effect of metal substitution on structure, bonding, and magnetism

A crystallographic study and theoretical assessment of the Gd/Y site preferences in the Gd 5- x Y x Tt 4 ( Tt = Si, Ge) series prepared by high-temperature methods is presented. All structures for the Gd 5- x Y x Si 4 system belong to the orthorhombic, Gd 5Si 4-type (space group Pnma). For the Gd 5- x Y x Ge 4 system, phases with x < 3.6 and x >or= 4.4 adopt the orthorhombic, Sm 5Ge 4-type structure. For the composition range of 3.6 相似文献   

Phase transformation driven by valence electron concentration: tuning interslab bond distances in Gd5GaxGe4-x

X-ray single crystal and powder diffraction studies on the Gd(5)Ga(x)()Ge(4)(-)(x)() system with 0 < or = x < or = 2.2 reveal dependence of interslab T-T dimer distances and crystal structures themselves on valence electron concentration (T is a mixture of Ga and Ge atoms). While the Gd(5)Ga(x)()Ge(4)(-)(x)() phases with 0 < or = x < or = 0.6 and valence electron concentration of 30.4-31 e(-)/formula crystallize with the Sm(5)Ge(4)-type structure, in which all interslab T-T dimers are broken (distances exceeding 3.4 A), the phases with 1 < or = x < or = 2.2 and valence electron concentration of 28.8-30 e-/formula adopt the Pu(5)Rh(4)- or Gd(5)Si(4)-type structures with T-T dimers between the slabs. An orthorhombic Pu(5)Rh(4)-type structure, which is intermediate between the Gd(5)Si(4)- and Sm(5)Ge(4)-type structures, has been identified for the Gd(5)GaGe(3) composition. Tight-binding linear-muffin-tin-orbital calculations show that substitution of three-valent Ga by four-valent Ge leads to larger population of the antibonding states within the dimers and, thus, to dimer stretching and eventually to dimer cleavage.     

Intermetallics as zintl phases: Yb2Ga4Ge6 and RE3Ga4Ge6 (RE=Yb, Eu): structural response of a [Ga4Ge6]4- framework to reduction by two electrons

Two new intermetallic compounds, Yb(2)Ga(4)Ge(6) and Yb(3)Ga(4)Ge(6), were obtained from reactions in molten Ga. A third compound, Eu(3)Ga(4)Ge(6), was produced by direct combination of the elements. The crystal structures of these compounds were studied by single-crystal X-ray diffraction. Yb(2)Ga(4)Ge(6) crystallizes in an orthorhombic cell with a=4.1698(7), b=23.254(4), c=10.7299(18) A in the polar space group Cmc2(1). The structure of RE(3)Ga(4)Ge(6) is monoclinic, space group C2/m, with cell parameters a=23.941(6), b=4.1928(11), c=10.918(3) A, beta=91.426(4) degrees for RE=Yb, and a=24.136(2), b=4.3118(4), c=11.017(1) A, beta=91.683(2) degrees for RE=Eu. The refinement [I>2 sigma(I)] converged to the final residuals R(1)/wR(2)=0.0229/0.0589, 0.0411/0.1114, and 0.0342/0.0786 for Yb(2)Ga(4)Ge(6), Yb(3)Ga(4)Ge(6), and Eu(3)Ga(4)Ge(6), respectively. The structures of these two families of compounds can be described by a Zintl concept of bonding, in which the three-dimensional [Ga(4)Ge(6)](n-) framework serves as a host and electron sink for the electropositive RE atoms. The structural relation of RE(3)Ga(4)Ge(6) to of Yb(2)Ga(4)Ge(6) lies in a monoclinic distortion of the orthorhombic cell of Yb(2)Ga(4)Ge(6) and reduction of the [Ga(4)Ge(6)] network by two electrons per formula unit. The results of theoretical calculations of the electronic structure, electrical transport data, and thermochemical and magnetic measurements are also reported.     

Ternary arsenides A2Zn2As3 (A = Sr, Eu) and their stuffed derivatives A2Ag2ZnAs3

The ternary arsenides A(2)Zn(2)As(3) and the quaternary derivatives A(2)Ag(2)ZnAs(3) (A = Sr, Eu) have been prepared by stoichiometric reaction of the elements at 800 °C. Compounds A(2)Zn(2)As(3) crystallize with the monoclinic Ba(2)Cd(2)Sb(3)-type structure (Pearson symbol mC28, space group C2/m, Z = 4; a = 16.212(5) ?, b = 4.275(1) ?, c = 11.955(3) ?, β = 126.271(3)° for Sr(2)Zn(2)As(3); a = 16.032(4) ?, b = 4.255(1) ?, c = 11.871(3) ?, β = 126.525(3)° for Eu(2)Zn(2)As(3)) in which CaAl(2)Si(2)-type fragments, built up of edge-sharing Zn-centered tetrahedra, are interconnected by homoatomic As-As bonds to form anionic slabs [Zn(2)As(3)](4-) separated by A(2+) cations. Compounds A(2)Ag(2)ZnAs(3) crystallize with the monoclinic Yb(2)Zn(3)Ge(3)-type structure (Pearson symbol mC32, space group C2/m; a = 16.759(2) ?, b = 4.4689(5) ?, c = 12.202(1) ?, β = 127.058(1)° for Sr(2)Ag(2)ZnAs(3); a = 16.427(1) ?, b = 4.4721(3) ?, c = 11.9613(7) ?, β = 126.205(1)° for Eu(2)Ag(2)ZnAs(3)), which can be regarded as a stuffed derivative of the Ba(2)Cd(2)Sb(3)-type structure with additional transition-metal atoms in tetrahedral coordination inserted to link the anionic slabs together. The Ag and Zn atoms undergo disorder but with preferential occupancy over four sites centered in either tetrahedral or trigonal planar geometry. The site distribution of these metal atoms depends on a complex interplay of size and electronic factors. All compounds are Zintl phases. Band structure calculations predict that Sr(2)Zn(2)As(3) is a narrow band gap semiconductor and Sr(2)Ag(2)ZnAs(3) is a semimetal. Electrical resistivity measurements revealed band gaps of 0.04 eV for Sr(2)Zn(2)As(3) and 0.02 eV for Eu(2)Zn(2)As(3), the latter undergoing an apparent metal-to-semiconductor transition at 25 K.     

A new conformer of indium germanate InGe3O7.5(en): conformational polymorphism in germanate family

A new conformer of indium germanate InGe(3)O(7.5)(en) (denoted as δ-type), constructed with the flexible unit of In(2)Ge(6)O(15)N(2) was successfully prepared through a solvothermal method. The crystal data for the δ-type InGe(3)O(7.5)(en) are listed as follows: triclinic, space group P-1 (No.2), a = 7.826(4) ?, b = 8.287(3) ?, c = 9.224(4) ?, α = 71.887(17)°, β = 85.343(18)°, γ = 63.734(12)°, V = 508.64 ?(3), Z = 2. Four relevant conformers of indium germanate are compared with each other. The conformational polymorphism in the germanate family is reported for the first time.     

SrInGe and EuInGe: new Zintl phases with an unusual anionic network derived from the ThSi(2) structure

Two new isostructural Zintl phases, EuInGe and SrInGe, are obtained from high-temperature reactions of the pure elements in welded Ta tubes. Both ternary phases crystallize in a new structure type in space group Pnma (No. 62), with a = 4.921(1) A, b = 3.9865(9) A, and c = 16.004(3) A for EuInGe; and a = 5.021(1) A, b = 4.0455(9) A, and c = 16.188(4) A for SrInGe. The crystal structures established by single-crystal X-ray diffraction feature zigzag chains of 3-bonded Ge atoms and puckered layers of 4-bonded In atoms. The two structural units are linked into an anionic network with channels composed of 5-membered and 7-membered rings. The channels are filled by the respective divalent cations. The chemical bonding of the anionic [InGe](2)(-) network, derived from a one-electron oxidative distortion of the alpha-ThSi(2) structure, is explained using extended-Hückel band structure calculations. Magnetic measurements indicate that EuInGe exhibits Curie-Weiss paramagnetic behavior above 35 K and antiferromagnetic behavior below 35 K. The calculated effective moment, mu(eff) = 8.11 mu(B), of EuInGe and the diamagnetic behavior of SrInGe are consistent with the oxidation states of Eu(II) and Sr(II), respectively.     

N,N'-Ethylenedi-L-cysteine (EC) and Its Metal Complexes: Synthesis, Characterization, Crystal Structures, and Equilibrium Constants

N,N'-ethylenedi-L-cysteine (EC) and its indium(III) and gallium(III) complexes have been synthesized and characterized. The crystal structures of the ligand and the complexes have been determined by single-crystal X-ray diffraction. EC.2HBr.2H(2)O (C(8)H(22)Br(2)N(2)O(6)S(2)) crystallizes in the orthorhombic space group P2(1)2(1)2 with a = 12.776(3) ?, b = 13.735(2) ?, c = 5.1340 (10) ?, Z = 2, and V = 900.9(3) ?(3). The complexes Na[M(III)EC].2H(2)O (C(8)H(16)MN(2)O(6)S(2)Na) are isostructural for M = In and Ga, crystallizing in the tetragonal space group P4(2)2(1)2 with the following lattice constants for In, (Ga): a = 10.068(2) ?, (9.802(2) ?), b = 10.068(2) ?, (9.802(2) ?), c = 14.932(2) ?, (15.170(11) ?), Z = 4 (4), and V = 1513.6(5) ?(3), (1457.5(11) ?(3)). In both metal complexes, the metal atoms (In and Ga) are coordinated by six donor atoms (N(2)S(2)O(2)) in distorted octahedral coordination geometries in which two sulfur atoms and two nitrogen atoms occupy the equatorial positions, and the axial positions are occupied by two oxygen atoms of two carboxylate groups. The structures of the complexes previously predicted by molecular mechanics are compared with the crystal structures of the Ga(III) and In(III) complexes obtained experimentally. In contrast to the oxygen donors in phenolate-containing ligands, such as 1,2-ethylenebis((o-hydroxyphenyl)glycine) (EHPG) and N,N'-bis(o-hydroxybenzyl)ethylenediamine-N,N'-diacetic acid (HBED), the thiolate donors of EC enhances affinity for In(III) relative to Ga(III). The following stability sequence has been obtained: In(III) > Ga(III) > Ni(II) > Zn(II) > Cd(II) > Pb(II) > Co(II). Evidence was also obtained for several protonated and hydroxo species of the complexes of both divalent and trivalent metals, where the corresponding protonation constants (K(MHL)) decrease with increasing stability of the chelate, ML(n)(-)(4), where M(n)()(+) represent the metal ion.     

Sr11Ge4N6: a new nitride composed of [GeN2Sr7]4+ antiperovskite-type slabs and [Sr4Ge]4+ layers, separated by sheets of bent [Ge(II)N2]4- ions

The layered nitride Sr11Ge4N6 contains Ge4- Zintl anions in both [Sr4Ge]4+ layers and [GeN2Sr7]4+ antiperovskite-type slabs which are separated by sheets of bent [Ge(II)N2]4- ions; the observed range of formal germanium oxidation states in nitrides thus extends between +4 and -4.     

Conventional and stuffed bergman-type phases in the na-au-T (T = ga, ge, sn) systems: syntheses, structures, coloring of cluster centers, and fermi sphere-brillouin zone interactions

Bergman-type phases in the Na-Au-T (T = Ga, Ge, and Sn) systems were synthesized by solid-state means and structurally characterized by single-crystal X-ray diffraction studies. Two structurally related (1/1) Bergman phases were found in the Na-Au-Ga system: (a) a conventional Bergman-type (CB) structure, Na(26)Au(x)Ga(54-x), which features empty innermost icosahedra, as refined with x = 18.1 (3), Im3?, a = 14.512(2) ?, and Z = 2; (b) a stuffed Bergman-type (SB) structure, Na(26)Au(y)Ga(55-y), which contains Ga-centered innermost icosahedra, as refined with y = 36.0 (1), Im3?, a = 14.597(2) ?, and Z = 2. Although these two subtypes have considerable phase widths along with respective tie lines at Na ≈ 32.5 and 32.1 atom %, they do not merge into a continuous solid solution. Rather, a quasicrystalline phase close to the Au-poor CB phase and an orthorhombic derivative near the Au-rich SB phase lie between them. In contrast, only Au-rich SB phases exist in the Ge and Sn systems, in which the innermost icosahedra are centered by Au rather than Ge or Sn. These were refined for Na(26)Au(40.93(5))Ge(14.07(5)) (Im3?, a = 14.581(2) ?, and Z = 2) and Na(26)Au(39.83(6))Sn(15.17(6)) (Im3?, a = 15.009(2) ?, and Z = 2), respectively. Occupations of the centers of Bergman clusters are rare. Such centering and coloring correlate with the sizes of the neighboring icosahedra, the size ratios between electropositive and electronegative components, and the values of the average valence electron count per atom (e/a). Theoretical calculations revealed that all of these phases are Hume-Rothery phases, with evident pseudogaps in the density of states curves that arise from the interactions between Fermi surface and Brillouin zone boundaries corresponding to a strong diffraction intensity.     

Layered rare-earth gallium antimonides REGaSb(2) (RE = La--Nd, Sm).

The ternary rare-earth gallium antimonides, REGaSb(2) (RE = La--Nd, Sm), have been synthesized through reaction of the elements. The structures of SmGaSb(2) (orthorhombic, space group D(5)(2)-C222(1), Z = 4, a = 4.3087(5) A, b = 22.093(4) A, c = 4.3319(4) A) and NdGaSb(2) (tetragonal, space group D(19)(4h)-I4(1)/amd, Z = 8, a = 4.3486(3) A, c = 44.579(8) A) have been determined by single-crystal X-ray diffraction. The SmGaSb(2)-type structure is adopted for RE = La and Sm, whereas the NdGaSb(2)-type structure is adopted for RE = Ce--Nd. The layered SmGaSb(2) and NdGaSb(2) structures are stacking variants of each other. In both structures, two-dimensional layers of composition (2)(infinity)[GaSb] are separated from square nets of Sb atoms [Sb] by RE atoms. Alternatively, the structures may be considered as resulting from the insertion of zigzag Ga chains between (2)(infinity)[RE Sb(2)] slabs. In SmGaSb(2), all of the Ga chains are parallel and the (2)(infinity)[SmSb(2)] layers are stacked in a ZrSi(2)-type arrangement. In NdGaSb(2), the Ga chains alternate in direction, resulting in a doubling of the long axis relative to SmGaSb(2), and the (2)(infinity)[NdSb(2)] layers are stacked in a Zr(3)Al(4)Si(5)-type arrangement. Extended Hückel band structure calculations are used to explain the bonding in the [GaSb(2)](3-) substructure.     

Structure and properties of Gd3Ge4: the orthorhombic RE3Ge4 structures revisited (RE = Y, Tb-Tm)

The new binary compound Gd(3)Ge(4) has been synthesized and its structure has been determined from single-crystal X-ray diffraction. Gd(3)Ge(4) crystallizes in the orthorhombic space group Cmcm (No. 63) with unit cell parameters a = 4.0953(11) A, b = 10.735(3) A, c = 14.335(4) A, and Z = 4. Its structure can be described as corrugated layers of germanium atoms with gadolinium atoms enclosed between them. The bonding arrangement in Gd(3)Ge(4) can also be derived from that of the known compound GdGe (CrB type) through cleavage of the (infinity)(1)[Ge(2)] zigzag chains in GdGe and a subsequent insertion of an extra germanium atom between the resulting triangular fragments. Formally, these characteristics represent isotypism with the Er(3)Ge(4) type (Pearson's oC28). However, re-examination of the crystallography in the whole RE(3)Ge(4) series (RE = Y, Tb-Tm) revealed discrepancies and called into question the accuracy of the originally determined structures. This necessitated a new rationalization of the bonding, which is provided in the context of a comparative discussion concerning both the original and revised structure models, along with an analysis of the trends across the series. The temperature dependence of the magnetic susceptibility of Gd(3)Ge(4) shows that it is paramagnetic at room temperature and undergoes antiferromagnetic ordering below 29 K. Magnetization, resistivity, and calorimetry data for several other members of the RE(3)Ge(4) family are presented as well.     

Rational synthesis of [Ge9{Si(SiMe3)3}3]- from its parent Zintl ion Ge9(4-)

Reported is the first rational synthesis of a trisubstituted deltahedral Zintl ion, [Ge(9){Si(SiMe(3))(3)}(3)](-) in this case, by the addition of the three substituents in a reaction of the parent naked deltahedral Zintl ion Ge(9)(4-) with {(Me(3)Si)(3)Si}Cl. The new species were crystallized and structurally characterized in [K(2,2,2-crypt)](2)[Ge(9){Si(SiMe(3))(3)}(3)] (monoclinic, P2(1)/c, a = 26.497(3) ?, b = 24.090(2) ?, c = 29.268(3) ?, β = 113.888(2)°, V = 17082(3) ?(3), Z = 8, R1/wR2 = 0.0436/0.0812 for the observed data and 0.1023/0.1010 for all data).     

Synthesis and crystal structure of Ae(2)LiInGe(2) (Ae = Ca, Sr): new Zintl phases with a layered silicate-like network

Two new Zintl phases Ae(2)LiInGe(2) (Ae = Ca 1; Sr 2) were obtained from stoichiometric reactions of the pure elements in sealed Nb tubing at 1000-1050 degrees C. The isomorphous polar intermetallic phases crystallize in the orthorhombic space group Pnma, with cell constants of a = 7.2512(7), b = 4.4380(5), and c = 16.902(1) A for compound 1, and a = 7.5033(8), b = 4.6194(5), and c = 17.473(2) A for compound 2. The crystal structure can be derived from the vertex-sharing of InGe(4/2) tetrahedral units that form "corrugated" sheets normal to the crystallographic c-axis. Calcium and lithium atoms act as "spacers" that effectively separate the anionic [InGe(2)](5-) layers. The layered anionic substructure is similar to those exhibited by layered metal oxides, sulfides, and silicates. The connectivity of the tetrahedral building unit, [InGe(4/2)](5-), is analogous and isoelectronic to the silicate [SiO(4/2)] unit.     

Synthesis, structure, and bonding of BaTl4. Size effects on encapsulation of cations in electron-poor metal networks

The synthesis, structure, and bonding of BaTl(4) are described [C2/m, Z = 4, a = 12.408(3), b = 5.351(1), c = 10.383(2) ?, β = 116.00(3)°]. Pairs of edge-sharing Tl pentagons are condensed to generate a network of pentagonal biprisms along b that encapsulate Ba atoms. Alternating levels of prisms along c afford six more bifunctional Tl atoms about the waists of the biprisms, giving Ba a coordination number of 16. Each Tl atom is bonded to five to seven other Tl atoms and to three to five Ba atoms. There is also strong evidence that Hg substitutes preferentially in the shared edges of the Tl biprisms in BaHg(0.80)Tl(3.20) to generate more strongly bound Hg(2) dimers. Cations that are too small relative to the dimensions of the surrounding polyanionic network make this BaTl(4) structure (and for SrIn(4) and perhaps EuIn(4) as well) one stable alternative to tetragonal BaAl(4)-type structures in which cations are bound in larger hexagon-faced nets, as for BaIn(4) and SrGa(4). Characteristic condensation and augmentation of cation-centered prismatic units is common among many relatively cation- and electron-poor, polar derivatives of Zintl phases gain stability. At the other extreme, the large family of Frank-Kasper phases in which the elements exhibit larger numbers of bonded neighbors are sometimes referred to as orbitally rich.     

Chemical pressure and rare-earth orbital contributions in mixed rare-earth silicides La(5-x)Y(x)Si4 (0 ≤ x ≤ 5)

A crystallographic study and theoretical analysis of the structural and La/Y site preferences in the La(5-x)Y(x)Si(4) (0 ≤ x ≤ 5) series prepared by high-temperature methods is presented. At room temperature, La-rich La(5-x)Y(x)Si(4) phases with x ≤ 3.0 exhibit the tetragonal Zr(5)Si(4)-type structure (space group P4(1)2(1)2, Z = 4, Pearson symbol tP36), which contains only Si-Si dimers. On the other hand, Y-rich phases with x = 4.0 and 4.5 adopt the orthorhombic Gd(5)Si(4)-type structure (space group Pnma, Z = 4, Pearson symbol oP36), also with Si-Si dimers, whereas Y(5)Si(4) forms the monoclinic Gd(5)Si(2)Ge(2) structure (space group P2(1)/c, Z = 4, Pearson symbol mP36), which exhibits 50% "broken" Si-Si dimers. Local and long-range structural relationships among the tetragonal, orthorhombic, and monoclinic structures are discussed. Refinements from single crystal X-ray diffraction studies of the three independent sites for La or Y atoms in the asymmetric unit reveal partial mixing of these elements, with clearly different preferences for these two elements. First-principles electronic structure calculations, used to investigate the La/Y site preferences and structural trends in the La(5-x)Y(x)Si(4) series, indicate that long- and short-range structural features are controlled largely by atomic sizes. La 5d and Y 4d orbitals, however, generate distinct, yet subtle effects on the electronic density of states curves, and influence characteristics of Si-Si bonding in these phases.     

Quaternary tellurides with different valent Ge centers: Cs2Ge3M6Te14 (M = Ga, In)

New quaternary tellurides, Cs(2)Ge(3)M(6)Te(14) (M = Ga, In), were discovered by solid-state reactions. These compounds crystallize in space group P3ml (No. 164), with a = b = 8.2475(2) ?, c = 14.2734(8) ?, and V = 840.82(6) ?(3) (Z = 1) for Cs(2)Ge(3)Ga(6)Te(14) (1) and a = b = 8.5404(2) ?, c = 14.6766(8) ?, and V = 927.07(6) ?(3) (Z = 1) for Cs(2)Ge(3)In(6)Te(14) (2). The remarkable structural feature is the novel three-dimensional [Ge(3)M(6)Te(14)](2-) anionic framework made by condensed In(6)Te(14) (or Ga(6)Te(14)) layers that are connected alternately by dimeric Ge(3+)(2)Te(6) units and Ge(2+)Te(6) octahedra along the c direction. The presence of Ge centers with different oxidation states is also supported by the results of the electron localization function calculation and X-ray photoelectron spectroscopy measurement.     

Synthesis, structure, and bonding of Eu3Bi(Sn,Bi)4. A rare inverse-Cr5B3-type structure with a new tin/bismuth network

The ternary phase Eu3Bi(Sn1-xBix)4 ( approximately 0 < x < approximately 0.15) has been synthesized by solid-state methods at high temperature. The crystal structure of the limiting Eu3Bi(Sn3.39Bi0.61(3)) has been determined by single-crystal X-ray analysis to be isopointal with an inverse-Cr5B3-type structure [space group I4/mcm, Z = 4, a = 8.826(1) A, c = 12.564(3) A, and V = 978.6(3) A3]. The structure contains slabs of three-bonded Sn/Bi atoms as puckered eight- and four-membered rings interlinked at all vertices, and these are separated by planar layers of individual Eu and Bi atoms. In the normal (stuffed) Cr5B3-type analogue Eu5Sn3Hx, these two units are replaced by a more highly puckered network of Eu cations around isolated Sn atoms and planar layers of isolated Eu atoms and Sn dimers, respectively. Band structures of limiting models of the phase calculated by TB-LMTO-ASA methods show a metallic character and indicate that the mixed Sn/Bi occupancy in the slabs in this structure for x > 0 probably originates with the electronic advantages of the pseudogap that would occur at the electron count of the ideal Zintl phase Eu3Bi(Sn3Bi). The stability of a competing phase reduces this limit to Eu3Bi(Sn3.4Bi0.6).