Structural and transport properties of Sr_2VO_(3-δ)FeAs superconductors with different oxygen deficiencies

Sr2VO3-δFeAs superconductors with different oxygen deficiencies have been successfully fabricated.It is found that the superconducting transition temperature drops down monotonically with the increase of nominal oxygen deficiency.The diminishing of superconductivity is accompanied by the enhancement of residual resistivity,indicating an anomalous scattering effect induced by the oxygen deficiency.The highest superconducting transition temperature at about 36 K is achieved near the stoichiometrical sample Sr2VO2.9FeAs.The Hall effect measurements reveal that the density of charge carriers(electron-like here) varies qualitatively with the increase of nominal oxygen deficiency.Magnetotransport measurements show that the superconducting transition changes from one-step-like shape at low fields to two-step-like one at high fields,indicating an enhanced vortex motion due to the high anisotropy.     

Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN

Thin tungsten nitride (WNx) films were produced by reactive DC magnetron sputtering of tungsten in an Ar-N2 gas mixture. The films were used as Schottky contacts on AlGaN/GaN heterostructures. The Schottky behaviours of WNx contact was investigated under various annealing conditions by current-voltage (I-V ) measurements. The results show that the gate leakage current was reduced to 10-6 A/cm2 when the N2 flow is 400 mL/min. The results also show that the WNx contact improved the thermal stability of Schottky contacts. Finally, the current transport mechanism in WNx/AlGaN/GaN Schottky diodes has been investigated by means of I-V characterisation technique at various temperatures between 300 K and 523 K. A TE model with a Gaussian distribution of Schottky barrier heights (SBHs) is thought to be responsible for the electrical behaviour at temperatures lower than 523 K.     

Combinative energy, oxygen deficiency and superconductivity in LnBa2Cu3O7-x （Ln=Nd, Er, Sm）

The correlation among the combinative energy, superconductivity, oxygen content, the position of holes in different planes, and the position of holes in the Cu(2)-O plane in LnBa2Cu3O7-x (Ln=Nd, Er, and Sin) has been investigated on the basis of a block model. The results indicate that the combinative energy decreases with increasing Tc in all of these compounds. And also, the combinative energies are obviously different with holes at different positions in the Cu(2)-O plane when the oxygen deficiency is low. However, this difference becomes less with increasing the oxygen deficiency.The effect of the holes in different positions on the combinative energy supplies some clue to the understanding of an unresolved problem, i.e. whether the distribution of carriers in the CuO2 plane is uniform or inhomogeneous. The results not only show that the structural characters, the combinative energy between two structural blocks and the superconductivity are closely interrelated in this class of compounds, but also reveal some differences among these systems. The relationship between the combinative energy and the Tc value in NdBa2Cu3O7-x shows some features different from the systems containing Er or Sm.     

Design and properties study of fiber optic glucose biosensor

A new type of fiber optic glucose biosensor based on fluorescence quenching has been designed and its properties have been studied. Glucose can be oxidized by oxygen when glucose oxidase are used as the catalyst, therefore, the concentration of glucose can be measured by detecting the consumption of oxygen. For the detection of oxygen concentration, the ruthenium(Ⅱ) complex, Ru(bpy)3Cl2, were used as the fluorescence indicator and its fluorescence lifetime were detected by lock-in technology. The detecting range of the sensor is 50 - 500 mg/dl and its response time is 30 seconds, showing that this kind of sensors is possible to be used in clinical diagnosis and detection.     

Effect of Hydrogen Implantation on SIMOX SOI Materials

Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.     

Magnetic behaviors of cerium oxide-based thin films deposited using electrochemical method

Zn and Co multi-doped CeO2 thin films have been prepared using an anodic electrochemical method. The structures and magnetic behaviors are characterized by several techniques, in which the oxygen states in the lattice and the absorptive oxygen bonds at the surface are carefully examined. The absorptive oxygen bond is about 50% of the total oxygen bond by using a semi-quantitative method. The value of actual stoichiometry δ is close to 2. The experimental results indicate that the thin films are of a cerium oxide-based solid solution with few oxygen vacancies in the lattice and many absorptive oxygen bonds at the surface. Week ferromagnetic behaviors were evidenced by observed M–H hysteresis loops at room temperature. Furthermore, an evidence of relative ferromagnetic contributions was revealed by the temperature dependence of magnetization. It is believed that the ferromagnetic contributions exhibited in the M–H loops originate from the absorptive oxygen on the surface rather than the oxygen vacancies in the lattice.     

The effects of Zn vacancies on ferromagnetism in Cu-doped ZnO films controlled by oxygen pressure and Li doping

Zn0.99Cu0.01O films were studied experimentally and theoretically.The films were prepared by pulsed-laser deposi tion on Pt(111)/Ti/SiO2/Si substrates under various oxygen pressures to investigate the growth-dependence of the ferromag netic properties.The structural,magnetic,and optical properties were studied,and it was found that all the samples possess a typical wurtzite structure,and that the films exhibit room-temperature ferromagnetism.The sample deposited at 600℃and an oxygen pressure of 10 Pa showed a large saturation magnetization of 0.83μB/Cu.The enhanced ferromagnetism in the(Cu,Li)-codoped ZnO is attributable to the existence of Zn vacancies(VZn),as shown by first-principles calcu lations.The photoluminescence analysis demonstrated the existence of V Zn in both Zn0.99Cu0.01O and(Cu,Li)-codoped ZnO thin films,and this plays an important role in the increase of ferromagnetism,according to the results of first-principles calculations.     

INFLUENCE OF OXYGEN UPON THE SUPERCONDUCTIVITY OF THE Pb-DOPED 2223 SUPERCONDUCTOR

The influences of oxygen content (by quenching from different temperatures in air or oxygen) and its re-distribution (by annealing in nitrogen at 200℃) on T_c and room temperature resistivity were studied. It was found that T_c as a function of oxygen content or charge carrier concentration exhibits a maximum. Upon oxygen re-distribution, the room temperature resistivity would always inclose but T_c would change in a complicated way. T_c increases for the oxygen-rich state and decreases for the oxygen-deficient state Internal friction measurements showed that there are two kinds of oxygen defects in the Bi₂-O₂ layers. One is the isolated oxygen interstitials and the other is oxygen vacancies on the excess oxygen chains. It is proposed that the isolated interstitial oxygen will produce a set of impurity states near the Fermi level, and will create holes on the Cu3d-O2p band through charge transfer from the Cu3d-O2p band to the impurity states. The content of the isolated oxygen interstitial is believed to be the major factor for determining the charge carrier concentration. Variation of T_c and room temperature resistivity with oxygen re-distribution is sat-isfactorily explained as to be induced by combination of oxygen interstitials with oxygen vacancies on the excess oxygen-chains.     

Radiative divertor behavior and physics in Ar seeded plasma on EAST

To investigate the radiative divertor behavior and physics for the scenario of impurity seeded plasma in ITER, the radiative divertor experiments with argon(Ar) seeding under ITER-like tungsten divertor condition were carried out during recent EAST campaigns. The experimental results reveal the high efficiency of reducing heat load and particle flux onto the divertor targets owing to increased radiation by Ar seeding. We achieve detached plasmas in these experiments. The inner–outer divertor asymmetry reduces after Ar seeding. Impurities, such as Ar, C, Li, and W, exist in the entire space of the vacuum chamber during EAST operations, and play important roles in power exhausting and accelerating the plasma detachment process. It is remarkable that the contamination of the core plasma is observed using Ar seeding owing to the sputtering of plasma facing components(PFCs), particularly when Ar impurity is injected from the upper tungsten divertor.     

Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO

The influence of oxygen vacancy on the magnetism of Co-doped ZnO has been investigated by the first-principles calculations.It is suggested that oxygen vacancy and its location play crucial roles on the magnetic properties of Co-doped ZnO.The exchange coupling mechanism should account for the magnetism in Co-doped ZnO with oxygen vacancy and the oxygen vacancy is likely to be close to the Co atom.The oxygen vacancy (doping electrons) might be available for carrier mediation but is localized with a certain length and can strengthen the ferromagnetic exchange interaction between Co atoms.     

Loss mechanism and lifetime estimation of Ce–W cathode in high temperature thermionic emission electrostatic precipitation

Rare earth tungsten, 2.2% cerium–tungsten (Ce–W), was used as emission cathode material in thermionic emission electrostatic precipitation. The microstructures and emission properties were investigated. A model was established to estimate cathode lifetime in high temperature and oxygen-bearing atmosphere. Results show that there were not great changes in the inner microstructure of emission materials. But on the surface, tungsten was oxidized to tungsten trioxide and then tungsten trioxide and rare earth oxides evaporated and lost. Decrease of oxygen concentration was effective to prolong operation time of cathode. The increase of temperature reduced cathode lifetime remarkably.     

Electrochromic colour centres in amorphous tungsten trioxide thin films

Amorphous tungsten trioxide films, investigated by the Raman scattering method, are shown to be composed of a spatial network of tightly bound (WO₆)_n·mH₂O clusters with a large number of terminal oxygen W=O and W-O-W bonds between clusters. The injected electrons in an amorphous tungsten trioxide film are localized in the tungsten 5d orbitals in an axially distorted octahedron, as is shown by ESR analysis. The optical absorption of a coloured amorphous tungsten trioxide film, as has previously been proposed, can be satisfactorily described by an intervalence charge-transfer transition between localized W⁵⁺ and W⁶⁺ states.     

Atomic imaging of oxygen desorption from tungsten trioxide

We report direct observations by high-resolution electron microscopy of oxygen desorption from tungsten trioxide. Clear evidence is found for layer epitaxial growth of metallic tungsten with (110)W|(100)WO₃ and [001]W and [001]WO₃ parallel to the electron beam, consistent with low-energy electron diffraction data on the low-temperature epitaxy of WO₃ on W. W[001] was always observed parallel to the electron beam independent of the surface normal. The results suggest that bulk and surface damage, and displacement processes, are similar.     

Surface composition of prepared tungsten carbide and its catalytic activity

The surface composition and electronic structure of carburized tungsten trioxide, which is prepared by heating WO₃ in carbon monoxide atmosphere at 700°C, are investigated using X-ray photoelectron spectroscopy (XPS). The relationship between the surface composition and the catalytic activity for methanol electro-oxidation is clarified. The formation of tungsten carbide at the surface enhances the catalytic activity. On the other hand, the presence of free carbon or tungsten trioxide in the surface layer reduces the activity remarkably. It is also shown that, the higher the electronic density of states near the Fermi level, the higher the catalytic activity. Additionally, the catalytic behavior of tungsten carbide for methanol electro-oxidation is mentioned.     

氧化钨纳米线结构相变的拉曼光谱研究

本文利用拉曼光谱技术对氧化钨纳米线结构随激光功率改变而变化的情况进行了研究。研究结果表明氧化钨纳米线在一定功率的激光照射下被氧化成了三氧化钨纳米线;随着激光功率的进一步增大,纳米线温度进一步升高,三氧化钨纳米线由开始的单斜相向正交相结构过渡。实验证实三氧化钨纳米线的相变过程是可逆的,而之前的氧化过程是不可逆的。     

Author index

The catalytic activity of the substoichiometric tungsten trioxide electrodes for the oxidation of hydrogen has been investigated, using simultaneous EPR spectroscopy and linear-sweep voltammetry measurements. The parameters of the EPR spectral line observed for all oxides except stoichiometric WO₃ were determined in relation to the electronic structure of the paramagnetic centers associated with the oxygen anion vacancies. Hydrogen adsorption was followed by means of changes both in the EPR line parameters and in the electrode potential. The intensity-versus-potential curves for suboxide electrodes under hydrogen were analyzed in terms of the occurrence of two processes. It was shown that one process is associated with the hydrogen oxidation and that the other is connected with oxidation of the WO_3?x surface. The mechanisms of both reactions were interpreted as involving the formation and oxidation of an hydrogen tungsten bronze.     

Structural and optical properties of WO<Subscript>3</Subscript> electrochromic layers prepared by the sol-gel method

Thin layers of tungsten trioxide have been prepared from an aqueous solution of peroxotungstic acid (PTA) using the sol-gel method. Compositional, structural and optical characteristics of WO₃ coated on indium tin oxide (ITO) conductive glass substrates were studied using X-ray diffractometery (XRD), cyclic voltammetery (CV), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). Monoclinic and triclinic crystalline structures for thin film and powdered WO₃ were confirmed by XRD analysis. SEM micrograph of annealed samples revealed micro cracks due to a decrease in density and a contraction of layers. EDX analysis showed that 1∶2 ratio of oxygen and tungsten atoms in the prepared films is obtained at heat treatment temperatures higher than 200 °C. Furthermore, the annealed samples showed very good electrochromic behavior in cyclic voltammetery studies. Refractive index “n” and extinction coefficient “k” values were found to be reduced by increasing the wavelength and decreasing the temperature.     

High energy density asymmetric supercapacitors based on polyaniline nanotubes and tungsten trioxide rods

Ionics - A high energy density asymmetric supercapacitor (ASC) is assembled utilizing polyaniline (PANI) nanotubes as the positive electrode and tungsten trioxide (WO3) rods as the negative...     

Preparation and investigation of the composite based on superhigh-molecular poly(ethylene) and WO<Subscript>3</Subscript>

A composite based on superhigh-molecular poly(ethylene) and tungsten trioxide nanoparticles has been synthesized using the activation method. Tungsten nanoparticles have been prepared using the plasmachemical method and then oxidized in air. The particle size is 48 ± 7 nm. It has been established that the addition of tungsten nanoparticles to superhigh-molecular poly(ethylene) brings about changes in the arrangement of hydrocarbon chains in the structure, which leads to an improvement of the strength characteristics of the products.     

三氧化钨表面氢吸附机理的第一性原理研究

采用基于密度泛函理论的第一性原理平面波超软赝势方法,在广义梯度近似下,研究了立方WO_3,WO_3(001)表面结构及其氢吸附机理.计算结果表明立方晶体WO_3理论带隙宽度为0.587 eV.WO_3(001)表面有WO终止(001)表面和O终止(001)表面两种结构,表面结构优化后W—O键长和W—O—W键角改变,从而实现表面弛豫;WO终止(001)表面和O终止(001)表面分别呈现n型半导体特征和p型半导体特征.分别计算了H原子吸附在WO终止(001)表面和O终止(001)表面的H—O_(2c)—H,H—O_(2c)…H—O_(2c),H—O_(1c)—H和H—O_(1c)…H—O_(1c)四种吸附构型,其中H—O_(1c)—H吸附构型的吸附能最小,H—O键最短,H失去电子数最多,分别为-3.684 eV,0.0968 nm和0.55e,此吸附构型最稳定.分析其吸附前后的态密度,带隙从吸附前的0.624 eV增加到1.004 eV,价带宽度基本不变.H的1s轨道电子与O的2p,2s轨道电子相互作用,在-8和-20 eV附近各形成了一个较强的孤立电子峰,两个H原子分别与一个O_(1c)原子形成化学键,最终吸附反应生成了一个H_2O分子,同时产生了一个表面氧空位.