SiO2半波覆盖层对HfO2／SiO2高反射膜激光损伤的影响

研究了SiO2半波覆盖层对HfO2／SiO2高反射膜1064nm激光损伤的影响,分析薄膜的激光损伤特性及图貌得出-对于单脉冲(1-ON-1)激光损伤,SiO2半波覆盖层能提高HfO2／SiO2高反射膜的激光损伤厨值,可显著降低激光损伤程度,减小灾难性损伤发生的概率,可大幅度提高FIfO2／SiO2高反射膜的抗激光损伤能力。     

4H-SiC基底Al_2O_3/SiO_2双层减反射膜的设计和制备

在4H-SiC基底上设计并制备了Al2O3SiO2紫外双层减反射膜,通过扫描电镜(SEM)和实测反射率谱来验证理论设计的正确性.利用编程计算得到Al2O2和SiO2的最优物理膜厚分别为42.0 nm和96.1 nm以及参考波长λ=280 nm处最小反射率为0.09%.由误差分析可知,实际镀膜时保持双层膜厚度之和与理论值一致有利于降低膜系反射率.实验中应当准确控制SiO2折射率并使Al2O3折射率接近1.715.用电子束蒸发法在4H-SiC基底上淀积Al2O3SiO2双层膜,厚度分别为42 nm和96 nm.SEM截面图表明淀积的薄膜和基底间具有较强的附着力.实测反射率极小值为0.33%,对应λ=276 nm,与理论结果吻合较好.与传统SiO2单层膜相比,Al2O3SiO2双层膜具有反射率小,波长选择性好等优点,从而论证了其在4H-SiC基紫外光电器件减反射膜上具有较好的应用前景.     

532nm HfO_2/SiO_2高反膜的激光预处理效应

采用单台阶能量光栅扫描以及R-on-1测试两种不同预处理方式研究了激光预处理技术对532nm HfO2/SiO2高反膜的阈值提升效果。用Nd:YAG二倍频激光对电子束蒸发制备的532nm HfO2/SiO2高反膜进行1-on-1损伤阈值测试,然后分别进行单台阶能量光栅扫描以及R-on-1测试。通过对损伤概率以及损伤形貌的分析,发现激光预处理能够去除薄膜内低阈值缺陷,达到提高损伤阈值的目的,损伤阈值分别提高38%和30%。     

SiO2和HfO2薄膜光学性能的椭偏光谱测量

结合XRD和原子力显微镜等方法,利用椭圆偏振光谱仪测试了单层SiO2薄膜（K9基片）和单层HfO2薄膜（K9基片）的椭偏参数,并用Sellmeier模型和Cauchy模型对两种薄膜进行拟合,获得了SiO2薄膜和HfO2薄膜在300-800nm波段内的色散关系。用X射线衍射仪确定薄膜结构,并用原子力显微镜观察薄膜的微观形貌,分析表明：SiO2薄膜晶相结构呈现无定型结构,HfO2薄膜的晶相结构呈现单斜相结构;薄膜光学常数的大小和薄膜的表面形貌有关;Sellmeier和Cauchy模型较好地描述了该波段内薄膜的光学性能,并得到薄膜的折射率和消光系数等光学常数随波长的变化规律。     

ZrO2/SiO2多层膜中膜厚组合周期数及基底材料对残余应力的影响

ZrO2/SiO2多层膜由相同沉积条件下的电子束蒸发方法制备而成,通过改变多层膜中高(ZrO2)、低(SiO2)折射率材料膜厚组合周期数的方法,研究了沉积在熔石英和BK7玻璃基底上多层膜中残余应力的变化.用ZYGO光学干涉仪测量了基底镀膜前后曲率半径的变化,并确定了薄膜中的残余应力.结果发现,该多层膜中的残余应力为压应力,随着薄膜中膜厚组合周期数的增加,压应力值逐渐减小.而且在相同条件下,石英基底上所沉积多层膜中的压应力值要小于BK7玻璃基底上所沉积多层膜中的压应力值.用x射线衍射技术测量分析了膜厚组合周期数不同的ZrO2/SiO2多层膜微结构,发现随着周期数增加,多层膜的结晶程度增强.同时多层膜的微结构应变表现出了与所测应力不一致的变化趋势,这主要是由多层膜中,膜层界面之间复杂的相互作用引起的.     

退火对EBE,IBS和ALD沉积HfO2薄膜的抗激光损伤性能影响

结合自身实验条件采用电子束蒸发(EBE)、离子束溅射(IBS)和原子层沉积(ALD)三种工艺制备了HfO2薄膜,对其进行退火实验,采用1064 nm Nd:YAG激光测定了即时沉积和退火后各HfO2薄膜的抗激光损伤能力。研究发现,ALD HfO2薄膜的激光损伤阈值最高,EBE HfO2薄膜次之,IBS HfO2薄膜的损伤阈值最低;300℃退火对各工艺薄膜抗激光损伤能力的影响均为负面,500℃退火则会显著降低ALD HfO2薄膜的抗激光损伤能力。     

Molecular Dynamics Simulation of Ion Implantation into HfO2 and HfO2／Si Multi-Layer Structure

We simulate the B, As and P implantations into HfO2 from 3keY to 40keY by a simulator LEACS developed based on molecular dynamics method and by the traditional Monte Carlo simulator TSUPREM4 respectively. The LEACS results accurately fit with the SIMS (secondary ion mass spectroscopy) data, while the TSUPREM4 results deviate from the SIMS data obviously except B implantation. Based on the verification of the simulator, influence of the oxide thickness on the retained range profiles in the Si layer has been quantitatively investigated in the case of HfO2/Si and SiO2/Si structures. The range profiles in the Si layer through HfO2 shift to the surface obviously for about 0.68 times of the oxide layer thickness on the average in comparison to those through SiO2. It can be predicted that this effect will have a significant impact on MOSFET (metallic oxide semiconductor field effect transistor) device performance in the integrated circuit process of the next decade if HfO2 is used to replace SiO2 as the gate dielectric.     

248 nm高反膜抗激光损伤性能

用电子束蒸发法在熔融石英基底上沉积了适用于248nm的HfO2/SiO2高反膜,为提高其抗激光损伤能力,设计并制备了两种保护层,一种是在常规高反膜系的基础上镀制二分之一波长厚度的SiO2保护层,另一种是用Al2O3/MgF2做保护层。测试了3种高反膜样品的激光损伤情况,通过损伤形貌的变化分析了两种保护层使抗激光损伤能力提高的原因以及存在的问题。     

溶胶-凝胶ZrO_2/SiO_2薄膜的激光损伤研究

采用溶胶-凝胶工艺分别制备了SiO2和ZrO2单层薄膜、ZrO2/SiO2双层膜以及ZrO2/SiO2多层高反膜。用输出波长为1064nm、脉宽为6.3ns的YAG激光器对薄膜进行了激光损伤实验。观察了薄膜经强激光辐照后的损伤情况,讨论了薄膜的激光损伤行为,并从理论上分析了产生这些损伤的原因,为进一步镀制高质量的ZrO2/SiO2多层高反膜提供了依据。     

COIL用薄膜90°位相延迟高反射镜的研制

随着氧碘化学激光器（COIL）输出功率的不断提高,传统的膜系设计已不能满足要求。在倍频膜系的设计基础上,优化设计出了激光45°入射时对1 315 nm和632.8 nm双波长高反（HR）并在1 315 nm处具有90°位相延迟的高反射镜,其基底材料为融石英,高折射率材料为ZrO2, 低折射率材料为SiO2。然后,采用电子束蒸发手段制备了口径为200 mm的高反射位相延迟镜。最后对该延迟镜的性能进行了测试,结果表明:对632.8 nm波长的反射率大于等于95.0%,对1 315 nm波长的反射率大于等于99.8%,位相延迟在90.235°～95.586°范围内。     

Influence of purity of HfO2 on reflectance of ultraviolet multilayer

The impurities in two kinds of HfO2 materials and in their corresponding single layer thin films were determined through glow discharge mass spectrum technology and secondary ion mass spectrometry(SIMS) equipment respectively.It was found that ZrO2 was the main impurity in the two kinds of HfO2 either in the original HfO2 materials or in the electron beam deposited films.In addition,the difference of Zr content in the two kinds of HfO2 single laver films was much laxger than that of the other impurities such as Ti and Fe.which showed that it was just ZrO2 that made the difference between the optical performance of the film products including the two kinds of HfO2.With these two kinds of HfO2 and the same kind of SiO2.we deposited HfO2/SiO2 multilayer reflective coatings at the wavelength of 266 nm.Experimental results showed that the reflectances of these two mirrors were about 99.85% and 99.15% respectively,which agreed well with the designed results what were based on the optical constants obtained from the corresponding single layer thin films.     

等离子体辅助沉积HfO_2/SiO_2减反、高反光学薄膜

本文报导了用等离子体辅助（Ｐｌａｓｍａ－ＩＡＤ）沉积技术沉积ＨｆＯ２／ＳｉＯ２减反及高反光学薄膜。在波长１０６４ｎｍ处，ＨｆＯ２／ＳｉＯ２减反膜透过率大于９９．５％，ＨｆＯ２／ＳｉＯ２高反膜反射率大于９９．５％。     

电子束蒸发和离子束溅射HfO_2紫外光学薄膜

HfO2薄膜在紫外光学中具有十分重要的地位,不同方法制备的HfO2薄膜特性不同,可以满足不同的实际应用需求。本文分别利用电子束蒸发和离子束溅射方法制备了用于紫外光区域的HfO2薄膜,并对薄膜的材料和光学特性进行了表征与比较。通过对单层HfO2薄膜的实测透射和反射光谱进行数值反演,得到了HfO2薄膜在230～800 nm波段的折射率和消光系数色散曲线,结果表明两种方法制备的HfO2薄膜在250nm的消光系数均小于2×10-3。在此基础上,制备了两种典型的紫外光学薄膜元件(紫外低通滤波器和240nm高反射镜),其光谱性能测试结果表明,两种不同方法制备的器件均具有较好的光学特性。     

Study on Laser Conditioning of Optical Coatings

ＳｔｕｄｙｏｎＬａｓｅｒＣｏｎｄｉｔｉｏｎｉｎｇｏｆＯｐｔｉｃａｌＣｏａｔｉｎｇｓ￥ＺＨＡＯＱｉａｎｇ；ＦＡＮＺｈｅｎｇｘｉｕ；ＷＡＮＧＺｈｉｊｉａｎｇ（ＳｈａｎｇｈａｉＩｎｓｔｉｔｕｔｅｏｆＯｐｔｉｃｓａｎｄＦｉｎｅＭｅｃｈａｎｉｃｓ，Ｃｈｉｎｅｓ...     

采用HfO2/SiO2溶胶-凝胶薄膜制备衍射光栅

采用溶胶-凝胶方法制备了具有光敏性的HfO2/SiO2溶胶-凝胶薄膜,并利用其光敏性制备了衍射光栅.采用XPS分析了薄膜的成份,证实了Hf元素的存在.并用椭偏仪测试了薄膜的折射率,结果证实了HfO2的加入确实提高了体系的折射率.利用其光敏性,采用X射线作曝光光源通过掩模进行曝光,利用曝光部分与未曝光部分的溶解度差,在薄膜上制备了高为0.8 μm、周期为1 μm的衍射光栅.     

两种后处理方法对HfO2薄膜性能的影响

利用电子束蒸发和光电极值监控技术制备了氧化铪薄膜,并分别用两种后处理方法(空气中退火和氧等离子体轰击)对样品进行了处理.然后,对样品的透过率、吸收和抗激光损伤阈值进行了测试分析.实验结果表明,两种后处理方法都能不同程度地降低了氧化铪薄膜的吸收损耗、提高了抗激光损伤阈值.实验结果还表明,氧等离子体轰击的后处理效果明显优于热退火,样品的吸收平均值在氧等离子体后处理前后分别为34.8 ppm和9.0 ppm,而基频(1 064 nm)激光损伤阈值分别为10.0 J/cm2和21.4 J/cm2.     

Annealing effects on residual stress of HfO2/SiO2 multilayers

HfO2/SiO2 multilayer films were deposited on BK7 glass substrates by electron beam evaporation method.The effects of annealing at the temperature between 200 and 400℃ on residual stresses have been studied.It is found that the residual stress of as-deposited HfO2/SiO2 multilayers is compressive.It becomes tensile after annealing at 200℃,and then the value of tensile stress increases as annealing temperature increases.And cracks appear in the film because tensile stress is too large when the sample is annealed at 400℃.At the same time,the crystallite size increases and interplanar distance decreases with the increase of annealing temperature.The variation of residual stresses is corresponding with the evolution of structures.     

电子束蒸发制备HfO2高k薄膜的结构特性

使用高真空电子束蒸发在p型Si（100）衬底上制备了高k HfO2薄膜.俄歇电子能谱证实薄膜组分符合化学配比；x射线衍射测量表明刚沉积的薄膜是近非晶的，高温退火后发生部分晶化；原子力显微镜和扫描电子显微镜检测显示在高温退火前后薄膜均具有相当平整的表面，表明薄膜具有优良的热稳定性；椭偏测得在600?nm处薄膜折射率为2.09；电容电压测试得到的薄膜介电常数为19.这些特性表明高真空电子束蒸发是一种很有希望的制备作为栅介质的HfO2薄膜的方法. 关键词： 高k薄膜 HfO2 电子束蒸发