国外光学薄膜的应用和真空镀膜工艺

本文概述了国外光学薄膜的典型应用和光学薄膜制造工艺的发展，着重阐述了国外的现代真空镀膜工艺。     

光学薄膜的温度场设计

提出了光学薄膜温度场的概念，研究分析了薄膜光学性质和热，物性质对其温度场的影响，给出了相变光盘薄膜和高功率激光反射膜的具体设计，还给出了相变膜的写入，擦除功率和激光反射膜的破坏阈值。     

光学薄膜的宽带膜厚监控装置

装置是由配有微机的快速扫描分光光度计组成,在镀膜时不断测量膜层的光谱透射率曲线以监控膜厚,并作了监控三层膜的试验。 装置的性能:测量波长宽度333nm;波长点数:50点;透射率精度:±1％;光谱透射率扫描速度:12c/s。     

光学薄膜热膨胀系数的研究

光热位移偏转技术结合横向光热偏转技术可用于研究薄膜样品的热膨胀系数.本文以SiO_2、TiO_2、ZrO_2、MgF_2、ThF4等单层光学薄膜为例.报道相关的实验方法及实验结果.     

光学薄膜吸收损耗的研究

用横向光热偏转技术研究光学薄膜的吸收损耗.结果表明:对ZrO_2、MgF_2、ZnS等单层膜,薄膜-基底界面吸收、空气-薄膜界面吸收以及薄膜体内吸收三者处于同一量级,而对TiO_2、Ta_2O_5、SiO_2等样品,薄膜-基底界面吸收远大于空气-薄膜界面吸收及薄膜体内吸收,是吸收损耗的主要来源.     

光学薄膜的等离子体离子镀的研究

根据薄膜沉积过程等离子体对光学薄膜膜蒸气分子或原子的作用，建立低压等离子体离子镀设备，并对常规光学薄膜、如硫化物、氧化物薄膜以及多层膜器件进行了系统的研究，对所制备薄膜样品的透射光谱、吸收、散射以及膜层的聚集密度等进行了全面的测试分析。实验研究表明，低压等离子体离子镀可大大提高常规光学薄膜的光机性能。     

反应离子镀光学薄膜的微观结构分析

用反应离子镀方法制备了ＴｉＯ２单层膜及ＴｉＯ２／ＳｉＯ２多层膜，用透射电子显微镜分别观察了由反应离子镀方法及传统蒸镀法二种不同工艺制得的ＴｉＯ２单层膜及ＴｉＯ２／ＳｉＯ２多层膜的断面结构，并对ＴｉＯ２单层膜进行了喇曼分析和卢瑟福背散射分析。     

激光场对光学薄膜的作用

采用Mach-Zehnder干涉仪和光学延迟装置研究了Q开关激光与膜料折射率大于基底折射率和膜料折射率小于基底折射率的二类单层光学介质薄膜多次重复作用产生的等离子体形貌,从而对激光与介质薄膜相互作用的场效应进行了实验验证。     

记录薄膜Te—In—Sb光学性质的研究

采用高频溅射方法制成Te-In-Sb系统的非晶态薄膜.系统的研究了不同组分薄膜的透射、反射谱,及其在结晶过程中的变化.用透射电镜研究了Te-In-Sb薄膜的结构和晶化过程.分析了组分对薄膜的吸收系数、介电常数、光学能隙等光学性质的影响.并由此综合评价了Te-In—Sb系统中比较适合作为光盘介质的组成.     

System for measuring optical admittance of a thin film stack

A new method based on the polarization interferometer structure has been applied to measure the optical admittance, the refractive index and thickness of a thin film. The structure is a vibration insensitive optical system. There is one Twyman-Green interferometer part to induce a phase difference and one Fizeau interferometer part to induce the interference in the system. The intensities coming from four different polarizers were measured at the same time to prevent mechanical vibration influence. Using the polarization interferometer, the optical admittance, the refractive index and thickness of a single layer of Ta₂O₅ thin film has been measured. The measurement results were compared with the results obtained by ellipsometer. The results meet reasonable values in both refractive index and thickness.     

Electrical conductivity and optical properties of ZnO nanostructured thin film

The electrical conductivity, structural and optical properties of ZnO nanostructured semiconductor thin film prepared by sol-gel spin coating method have been investigated. The X-ray diffraction result indicates that the ZnO film has the polycrystalline nature with average grain size of 28 nm. The optical transmittance spectrum indicates the average transmittance higher than 90% in visible region. The optical band gap, Urbach energy and optical constants (refractive index, extinction coefficient, real and imaginary parts of the dielectric constant) of the film were determined. The electrical conductivity of the film dependence of temperature was measured to identify the dominant conductivity mechanism. The conductivity mechanism of the film is the thermally activated band conduction. The electrical conductivity and optical results revealed that the ZnO film is an n-type nanostructured semiconductor with a direct band gap of about 3.30 eV at room temperature.     

基底微缺陷对介质薄膜光学性能影响的理论研究

基于非均匀膜理论提出一种存在微缺陷的介质基底的折射率分层模型，将基底依次分为表面层、亚表面层和体材料层，其中表面层和亚面层分别等效为折射率服从统计分布的非均匀膜，将它们分别再次细分为N₁和N₂个子层，每一子层均视为均匀介质 膜.应用光学薄膜特征矩阵法对其进行理论分析，并对单层介质膜的光学性能进行数值计算. 研究结果表明：基底的表面和亚表面微缺陷改变了薄膜和基底的等效折射率，导致了准Brew ster角和组合反射率与理想情形的偏离.同时这些微缺陷也改变了光在薄膜和基底中的传播 特性，因此反射相移和相位差均偏离理想情形.在研究基底的微缺陷对多层介质膜光学性能 影响的分析和计算时，该模型同样适用. 关键词： 微缺陷 介质薄膜 非均匀膜 光学性能     

Ellipsometric analysis and optical absorption characterization of gallium phosphide nanoparticulate thin film

Gallium phosphide (GaP) nanoparticulate thin films were easily fabricated by colloidal suspension deposition via GaP nanoparticles dispersed in N,N-dimethylformamide. The microstructure of the film was performed by x-ray diffraction, high resolution transmission electron microscopy and field emission scanning electron microscopy. The film was further investigated by spectroscopic ellipsometry. After the model GaP+void|SiO₂ was built and an effective medium approximation was adopted, the values of the refractive index n and the extinction coefficient k were calculated for the energy range of 0.75 eV-4.0 eV using the dispersion formula in DeltaPsi2 software. The absorption coefficient of the film was calculated from its k and its energy gaps were further estimated according to the Tauc equation, which were further verified by its fluorescence spectrum measurement. The structure and optical absorption properties of the nanoparticulate films are promising for their potential applications in hybrid solar cells.     

In掺杂氮化亚铜薄膜的电学、光学和结构特性研究

采用射频磁控溅射方法, 在低功率和低温条件下利用纯氮气作为反应溅射气体制 备出不同In含量的三元氮化物Cu_xIn_yN薄膜. 研究发现In掺杂浓度对薄膜微结构、形貌、表面化学态以及光学特性有灵敏的调节作用. 光电子峰、俄歇峰、俄歇参数的化学位移变化从不同角度揭示了不同含量In掺杂引 起的原子结合情况的变化. XPS结果显示In含量小于8.2 at.%的样品形成了Cu-In-N键. 对In含量为4.6 at.%的样品进行XRD和TEM结构测试, 实验结果肯定了In原子填充到Cu₃N的反ReO₃结构的体心位置. 并且当In含量增至10.7 at.%时, 薄膜生长的择优取向从之前占主导地位的(001)方向转变为(111)方向. 此外, 随着In含量的增加, 薄膜的R-T曲线从指数形式变为线性. 当In含量为47.9 at.%时, 薄膜趋于大温区恒电阻率材料, 电阻温度系数TCR仅为-6/10000. 光谱测量结果显示In摻杂使得氮化亚铜掺杂薄膜的光学帯隙从间接帯隙变为直接帯隙. 由于Burstein-Moss效应, 帯隙发生蓝移, 从1.02 eV 到2.51 eV, 实现了帯隙连续可调. 关键词： 三元氮化物 薄膜 光学特性 氮化亚铜     

椭圆偏振法测量薄膜参量的数据处理

利用实时作图的方法,开发设计了椭偏仪数据处理应用程序,该程序不但具有传统查图法简便直观的特点,而且不限制实验条件的选择,能够满足科学研究和实验教学的要求,利用该程序和多入射角测量方法,能够确定薄膜的真实厚度。     

镧掺杂BaSnO3薄膜的电学和光学特性

利用射频磁控溅射法在(LaAlO₃)_0.3(SrAl_0.5Ta_0.5O₃)_0.7 (001)单晶基底上生长了镧掺杂BaSnO₃外延薄膜. 通过Hall效应和热电势测量证实了镧掺杂BaSnO₃薄膜具有n型简并半导体特征, 并且基于载流子浓度和Seebeck系数计算出电子的有效质量为0.31m₀ (m₀为自由电子质量). 镧掺杂BaSnO₃薄膜在可见波段具有良好的透明性(透过率大于73%). 基于介电模型对薄膜的透过率曲线进行拟合, 从拟合结果中不仅得到了薄膜的厚度为781.2 nm, 能带宽度为3.43 eV、 带尾宽度为0.27 eV和复光学介电常数随波长的变化规律, 而且也强力地支持了基于电学参数计算电子有效质量的正确性.     

Laser radiation effects on optical and structural properties of nanostructure CdSe thin film

Cadmium selenide (CdSe) thin films were deposited on a glass substrate using the thermal evaporation method at room temperature. The changes in the optical properties (optical band gap and absorption coefficient) after irradiation by TEA N₂ laser at different energies were measured in the wavelength range 190–800 nm using a spectrophotometer. It was found that the optical band gap is decreased after irradiating the thin films. The samples were characterized using X-ray diffraction (XRD), and the grain size of the CdSe thin film was calculated from XRD data, which was found to be 41.47 nm as-deposited. It was also found that grain size increases with laser exposure. The samples were characterized using a scanning electron microscope and it was found that big clusters were formed after irradiation by TEA N₂ laser.