Optical and electrical properties of p-type ZnO fabricated by NH3 plasma post-treated ZnO thin films

In this paper, a simple method is reported to obtain nitrogen-doped p-ZnO film. In this method NH₃ plasma, generated in a plasma-enhanced chemical vapor deposition system, was employed to treat ZnO thin film. By Hall-effect measurement, a p-type conductivity was observed for the treated film with the hole density of 2.2 × 10¹⁶ cm⁻³. X-ray photoelectron spectroscopy (XPS) results confirmed that nitrogen was incorporated into ZnO film during the treatment process to occupy the oxygen positions. In low temperature photoluminescence spectra, an emission peak corresponding to acceptor-donor pair was observed. From this emission peak we calculated the N-related acceptor binding energy to be 130 meV.     

原位氧化Zn3N2制备p型ZnO薄膜的性能研究

采用射频反应溅射法在玻璃衬底上制备Zn₃N₂薄膜，然后向真空室中通入纯氧气进行热氧化制备ZnO薄膜.利用X射线衍射、扫描电子显微镜、霍尔效应测量、透射光谱和光致发光光谱等表征技术，研究了氧化温度和氧化时间对ZnO薄膜的结晶质量、电学性质和光学性能的影响.研究结果显示，450 ℃ 下氧化2 h后的样品中除含有ZnO外，还有Zn₃N₂成分，500 ℃下氧化2 h可以制备出电阻率为0.7 Ωcm，空穴载流子浓度为10^{关键词： p型ZnO薄膜 3N₂薄膜')" href="#">Zn₃N₂薄膜 射频溅射 原位氧化}     

Effects of forming gas annealing on LiNbO3 single crystals

Z-cut congruent LiNbO₃ single crystals were annealed in 95%N₂+5%H₂ at high temperatures. X-ray diffraction showed that 2θ of (0 0 0 6) peak is obviously reduced by 0.6° and 1.0° for the samples annealed at 600 and 900 °C, respectively. A new peak appears at the high-energy side of O 1s spectrum in X-ray photoelelectron spectroscopy (XPS) analyses, and the leakage current is greatly increased. It is proposed that hydrogen is incorporated in LiNbO₃ single crystals through forming gas annealing at temperatures up to 900 °C and exists in LiNbO₃ as a proton bound to an oxygen ion through O-H bond with its electron donated.     

The infrared spectrum of NH3-dn trapped in solid neon

The infrared spectra of normal and deuterium-enriched Ne:NH₃=1600:1 deposits at 4.3 K have been observed, and the structure associated with almost all of the vibrational fundamentals has been assigned. Although the most prominent absorptions arise from the ground-state J=0 level(s), incomplete nuclear-spin equilibration enhances the contribution of absorptions arising from the ground-state J=1 levels. As had been proposed in an earlier study, the inversion splitting for the ν₂ fundamental is appreciably reduced from that observed for the gas-phase molecule, and the rotational structure associated with the J=1 levels of the vibrationally excited molecule is somewhat perturbed. Ammonia is trapped in two different types of site in solid neon. Matrix shifts from the corresponding gas-phase absorptions amount to only a few cm⁻¹, and are smaller than those previously reported for ammonia trapped in an argon matrix.     

Ab-initio density functional theory study of a WO3 NH3-sensing mechanism

WO 3 bulk and various surfaces are studied by an ab-initio density functional theory technique.The band structures and electronic density states of WO 3 bulk are investigated.The surface energies of different WO 3 surfaces are compared and then the (002) surface with minimum energy is computed for its NH 3 sensing mechanism which explains the results in the experiments.Three adsorption sites are considered.According to the comparisons of the energy and the charge change between before and after adsorption in the optimal adsorption site O 1c,the NH 3 sensing mechanism is obtained.     

External cavity tunable diode laser spectra of the ν1 + 2ν4 stretch-bend combination bands of NH3 and NH3

The ammonia ν₁ + 2ν₄ perpendicular stretch-bend combination band has been investigated in spectra of ¹⁴NH₃ and ¹⁵NH₃ recorded in the 6400-6800 cm⁻¹ region with an external cavity tunable diode laser (ECTDL) spectrometer. For ¹⁴NH₃, new assignments were determined initially by extrapolating from published low-J jet-cooled beam results up to transitions of higher J and K. Corresponding ν₁ + 2ν₄ transitions for the ¹⁵NH₃ species were then found by identifying similar patterns of lines with a characteristic downshift of approximately 9.7 cm⁻¹. Assignments were confirmed employing ground-state combination differences. Term values, a-s inversion splittings, l-doubling energies and parameter estimates from simple single-state fits are reported for the two ammonia species.     

Thermal annealing effects on the magnetic behavior of Ce2NiSi3

We have investigated the crystallographic, magnetic and thermodynamic properties of the as-cast and annealed Ce₂NiSi₃ alloys, crystallizing in the AlB₂-type hexagonal structure. The DC-magnetic susceptibility data show that the as-cast sample exhibits an antiferromagnetic (AFM) ordering below T_N= 3.8 K, whereas the annealed sample shows, at 4.2 K, a magnetic transition of AFM nature and, around 2.5 K, an additional anomaly. The specific heat shows a peak with at 3.8 K for the as cast sample, which shifts to lower temperatures when the magnetic field increases, consistent with the antiferromagnetic nature of the transition. On the other hand, in the annealed alloy, the maximum of the specific heat peak reaches at 4.2 K, and no additional anomalies were observed. The different magnetic behavior between the as-cast and annealed samples is attributed to thermal effects on the structural disorder of nickel and silicon atoms, as already observed in other isotypic R₂TSi₃ alloys, where R=U or Ce, and T= transition metal.     

Surface and bulk thermal annealing effects on ZnO crystals

Annealing at temperatures up to 1000 °C is shown to decrease band edge photoluminescence in bulk ZnO crystals and increase deep level-related emission. The surface roughens for anneals in the range of 600-800 °C as O is lost preferentially from the surface, but at 900 °C the morphology improves as excess Zn is also lost from the surface. Splitting of the peak in the rocking curve of the ZnO (0 0 2) plane after annealing at 900-1000 °C indicates that the substrate is a mosaic of two or more crystals oriented slightly differently from one another and we are detecting differences in orientation of some of the grains in different areas or small changes due to annealing. There was no significant change in bulk conductivity of the ZnO for anneals up to 1000 °C, suggesting that ion implantation followed by annealing may be an effective approach for doping in this.     

Optimization of annealing conditions of In2S3 thin films deposited by vacuum thermal evaporation

In₂S₃ thin films were grown on glass substrates by means of the vacuum thermal evaporation technique and subsequently thermally annealed in nitrogen and free air atmosphere from 250 to 350 °C for different durations. Experimental parameters have been adjusted in order to optimize the annealing conditions, and to obtain high band gap energy at low deposition temperature, as required for photovoltaic applications. In order to improve our understanding of the influence of the deposition and annealing parameters on device performance, we have investigated our indium sulfide material by X-ray diffraction, energy dispersive X-ray analysis (EDAX), atomic force microscopy (AFM) and spectrophotometry. The optical and structural properties of the films were studied as a function of the annealing temperature and durations. X-ray diffraction analysis shows the initial amorphous nature of deposited In-S thin films and the phase transition into crystalline In₂S₃ upon thermal annealing. Films show a good homogeneity and optical direct band gap energy about 2.2 eV. An annealing temperature of 350 °C during 60 min in air atmosphere were the optimal conditions.     

Flame structure studies of rich ethylene-oxygen-argon mixtures doped with CO2, or with NH3, or with H2O

Structures of several premixed ethylene-oxygen-argon rich flat flames burning at 50 mbar have been established by using molecular beam mass spectrometry in order to investigate the effect of CO₂, or NH₃, or H₂O addition on species concentration profiles. The aim of this study is to examine the eventual changes of profiles of detected hydrocarbon intermediates which could be considered as soot precursors (C₂H₂, C₄H₂, C₅H₄, C₅H₆, C₆H₂, C₆H₄, C₆H₆, C₇H₈, C₆H₆O, C₈H₆, C₈H₈, C₉H₈ and C₁₀H₈). The comparative study has been achieved on four flames with an equivalence ratio (f) of 2.50: one without any additive (F2.50), one with 15% of CO₂ replacing the same quantity of argon (F2.50C), one with 3.3% of NH₃ in partial replacement of argon (F2.50N) and one with 13% of H₂O in replacement of the same quantity of argon (F2.50H). The four flat flames have similar final flame temperatures (1800 K).CO₂, or NH₃, or H₂O addition to the fresh gas inlet causes a shift downstream of the flame front and thus flame inhibition. Endothermic processes CO₂ + H = CO + OH and H₂O + H = H₂ + OH are responsible of the reduction of the hydrocarbon intermediates in the CO₂ and H₂O added flames through the supplementary formation of hydroxyl radicals. It has been demonstrated that such processes begin to play at the end of the flame front and becomes more efficient in the burnt gases region.The replacement of some Ar by NH₃ is responsible only for a slight decrease of the maximum mole fraction of C₂H₂, but NH₃ becomes much more efficient for C₄H₂ and C₅ to C₁₀ species. Moreover, the efficiency of NH₃ as a reducing agent of C₅ to C₁₀ intermediates is larger than that of CO₂ and H₂O for equal quantities added.     

Investigation of annealing effects on the laser-induced damage threshold of amorphous Ta2O5 films

Ta₂O₅ films were deposited using the conventional electron beam evaporation method and then annealed at temperatures in the range 373-673 K. Chemical composition, scattering and absorption were examined by X-ray photoelectron spectroscopy (XPS), total integrated scattering (TIS) measurement and the surface thermal lensing (STL) technique, respectively. The laser-induced damage threshold (LIDT) was assessed using the output from an Nd:YAG laser with a pulse length of 12 ns. The results showed that the improvement of the LIDT after annealing was due to the reduced substoichiometric and structural defects present in the film. The LIDT increased slightly below 573 K and then increased significantly with increase in annealing temperature, which could be attributed to different dominant defects. Moreover, the root mean square (RMS) roughness and scattering had little effect on the LIDT, while the absorption and the LIDT were in accord with a general relation.     

Self- and foreign-gas-broadened lineshapes in the ν1 band of NH3

Precise N₂, O₂, H₂, Ar, He, and self-broadenings and shifts have been obtained for Q- and R-branch transitions in the ν₁ fundamental band of ammonia from simultaneous fits of low-noise, high-resolution difference-frequency laser spectra at pressures from 0.07 to 27 kPa (0.5-200 Torr). Observed lineshapes exhibit significant deviations from the conventional Voigt profile, which may be attributed to Dicke narrowing and/or speed-dependent broadening. At the higher pressures, line mixing is evident and must be included in the fits. For self-broadening, line mixing is dominated by collisional tunneling transitions, whereas for the non-polar buffers, rotational relaxation among selected K states is the primary mixing mechanism.     

Structural, elastic, and electronic properties of orthorhombic NH3BH3: An ab initio study

At the generalized gradient approximation (GGA), the elastic constants of the orthorhombic phase of NH₃BH₃ were calculated with plane-wave pseudo-potential method. Our calculation showed that the orthorhombic phase NH₃BH₃ is a loose and brittle material, as well as hard to be deformed, also we calculated the elastic anisotropies and the Debye temperatures from the elastic constants. And from the band structure and density of state (DOS), we concluded that NH₃BH₃ is a wide-gap semiconductor and the band gap is almost 6.0 eV. The bonds between N atoms and H atoms show a strong covalent characteristic, B atoms and H atoms form ironic bonds, and so as to the B-N bonds. Electrons from the B atoms are absorbed by the H atoms around the B atoms, and the H atoms display electronegativity.     

Self-broadening, self-shift and self-mixing in the ν2, 2ν2 and ν4 bands of NH3

Using Fourier-transform spectra (Bruker IFS 120 HR, resolution ≈0.004 cm⁻¹) of NH₃ in nine branches of the ν₂, 2ν₂ and ν₄ bands, self-broadening and self-shift as well as self-mixing coefficients have been determined at room temperature (T=295 K) for more than 350 rovibrational lines located in the spectral range 1000–1800 cm⁻¹. A non-linear least-squares multispectrum fitting procedure, including line mixing effects, has been used to retrieve successively the line parameters from 11 experimental spectra recorded at different pressures of pure NH₃. The accuracies of self-broadening coefficients are estimated to be better than 2% for most lines. The mean accuracies of line-mixing and line-shift data are estimated to be about 15% and 25%, respectively. The results are compared with previous measurements and with values calculated using a semiclassical model based upon the Robert–Bonamy formalism that reproduces rather well the systematic experimental J and K quantum number dependencies of the self-broadening coefficients.The results concerning line mixing demonstrate a large amount of coupling between the symmetric and asymmetric components of inversion doublets mainly in the ν₄ band. The line mixing parameters are both positive and negative. More than two thirds of the lines studied here have a positive shift coefficient. However, for most of them the shift coefficients are negative in the 2ν₂ band. They are positive for the R branch of the ν₂ band and for the ^PR and ^RP branches of the ν₄ band. For the other branches they are both positive and negative. Some components of inversion doublets illustrate a correlation between line mixing and shift phenomena demonstrated by a quadratic pressure dependence of line position.     

Substrate effects on V2O3 thin films

We apply density functional theory and the augmented spherical wave method to analyze the electronic structure of V₂O₃ in the vicinity of an interface to Al₂O₃. The interface is modeled by a heterostructure setup of alternating vanadate and aluminate slabs. We focus on the possible modifications of the V₂O₃ electronic states in this geometry, induced by the presence of the aluminate layers. In particular, we find that the tendency of the V 3d states to localize is enhanced and may even cause a metal-insulator transition.     

High power FIR NH3 laser using a folded resonator

A compact FIR laser cavity having a couple of folding mirrors was designed. By inserting this FIR cavity into the pump TE CO₂ laser resonator, we observed 19 FIR NH₃ laser lines of which 4 new lines were included. The maximum output power was over 500 W at 90 m.     

纳米VO2/ZnO复合薄膜的热致变色特性研究

为提高VO₂薄膜的热致变色性能,采用纳米结构和复合结构二者相结合的方法,通过磁控溅射技术先在玻璃衬底上制备高(002)取向ZnO薄膜,再在ZnO层上室温沉积钒金属薄膜,最后经热氧化处理获得纳米结构VO₂/ZnO复合薄膜.利用变温拉曼光谱观察分析了VO₂/ZnO薄膜相变前后的晶格畸变和键态的演变过程,讨论了薄膜的结构与热致红外开关特性和相变温度的内在关系.结果显示,与相同条件获得的同厚度的单层VO₂薄膜相比,纳米VO关键词： ZnO 2')" href="#">VO₂ 纳米复合薄膜 热致变色 拉曼光谱     

Anodization of aluminium thin films on pSi and annihilation of strong luminescence from Al2O3

Photoluminescence (PL) of Al₂O₃ films obtained by anodization of thermally evaporated and annealed thin Al films on p⁺⁺Si in 0.3 M oxalic acid has been investigated. Thermal annealing at 200–950 °C under the dry nitrogen atmosphere was used for deactivation of luminescence centres. Luminescence from as grown films was broad and located at 425 nm. This luminescence reached to highest level after annealing at 600 °C. Maximum 10 min was required for full optical activation and prolonged annealing up to 4 h did not change the luminescence intensity. Because of deep levels, absorption band edge of as grown films was shifted to the lower energy which is 3.25 eV. Annealing above 800 °C reduced the PL intensity and this observation was correlated with the blue shift of band edge as the defects annealed out. Disappearing PL intensity and blue shift of band edge absorption after annealing at 950 °C was mainly attributed to the oxygen-related defects and partly to impurities that may be originated from oxalic acid. AFM results did not show any hexagonally ordered holes but uniformly distributed nanosized Al₂O₃ clusters that were clearly seen. XRD measurements on as grown Al₂O₃ showed only [1 1 0] direction of α phase. Debye–Scherer calculation for this line indicates that cluster size is 35.7 nm. XRD and AFM pictures suggest that nanocrystalline Al₂O₃ are embedded in amorphous Al₂O₃.     

Synthesis and electrical properties of In2O3(ZnO)m superlattice nanobelt

One-dimensional（ID） In₂O₃（ZnO）_m superlattice nanobelts are synthesized by a chemical vapor deposition method.The formation of the In₂O₃（ZnO）_m superlattice is verified by the high-resolution transmission electron microscopy images.The typical zigzag boundaries could be clearly observed.An additional peak at 614 cm^-1 is found in the Raman spectrum,which may correspond to the superlattice structure.The study about the electrical transport properties reveals that the In₂O₃（ZnO）_m nanobelts exhibit peculiar nonlinear I-V characteristics even under the Ohmic contact measurement condition,which are different from the Ohmic behaviors of the In-doped ZnO nanobelts.The photoelectrical measurements show the differences in the photocurrent property between them,and their transport mechanisms are also discussed.     

Effect of annealing temperature on microstructure, optical and electrical properties of sputtered Ba0.9Sr0.1TiO3 thin films

Ba_0.9Sr_0.1TiO₃ (BST) thin films were deposited on fused quartz and Pt/TiN/Si₃N₄/Si substrates by radio frequency magnetron sputtering technique. Microstructure and chemical bonding states of the BST films annealed at 700 °C were characterized by field emission scanning electron microscopy, X-ray photoelectron spectroscopy, glancing angle X-ray diffraction and Raman spectrum. Optical constants including refractive indices, extinction coefficients and bandgap energies of the as-deposited BST film and the BST films annealed at 650, 700 and 750 °C, respectively, were determined from transmittance spectra by envelope method and Tauc relation. Dielectric constant and remnant polarization for the BST films increase with increasing annealing temperature. Leakage current density-applied voltage (J–V) data indicate that the dominant conduction mechanism for all the BST capacitors is the interface-controlled Schottky emission under the conditions of 14 V < V < 30 V and −30 V < V < −14 V. Furthermore, the inequipotential J–V characteristics for the BST films annealed at various temperatures are mainly attributed to the combined effects of the different thermal histories, relaxed stresses and strains, and varied Schottky barrier heights in the BST/Pt and Pt/BST interfaces.