An EPR Study of Scapolite

In single crystals of scapolite from two different localities, three paramagnetic centres are detected by electron paramagnetic resonance (EPR): 1. One isotropic singlet with g_iso = 2.005; 2. One triclinic singlet with g‖ = 2.005 ± 0.001 and g⟂= 2.009; 3. One triclinic sextet with g‖= 2.005 ± 0.001, g⟂ = 2.011; A‖ = 85.4 × 10⁻⁴ cm⁻⁴, A⟂ = 85.3 × 10⁻⁴ cm⁻¹. Centres 1 and 2 can be attributed to colour centres as they are bleached after annealing. Centre 3 can be due to Mn²⁺ (only the central M_s = ± 1/2 transition is observable) most likely substituting for Ca²⁺ The site symmetry must be triclinic but due to Al, Si disorder and mixed Na, Ca composition the different components from magnetically non-equivalent sites are averaged out for many orientations.     

Thermoelectric power of indium sesquisulphide single crystals

The investigation covers a temperature range from 200 to 450 K. Thermoelectric power measurements of In₂S₃ crystals showed that all samples under investigation have a positive TEP in all temperature ranges, indicating n-type conductivity for In₂S₃ crystals. The ratio of the electron and hole mobilities is μ_n/μ_p = 4.71. The effective mass of electrons m is found to be 0.00008 × 10⁻³¹ kg. The obtained effective masses of holes m = 1.893 × 10⁻³¹ kg. The diffusion coefficient for both carriers (electrons and holes) is evaluated to be 84.71 cm²/s and 17.985 cm²/s respectively. The mean free time between collision is estimated to be τ_n = 1.7 × 10⁻²⁰s, and τ_p = 8.5 × 10⁻¹⁷s. The estimated diffusion length for electrons is found to be L_n = 1.2 × 10⁻⁹ cm and L_p = 3.9 × 10⁻⁸ cm.     

Thermoelectric properties of indium sesquiselenide single crystals

Single crystals of δ-In₂Se₃ were prepared in the solid state laboratory at Qena-Egypt, by means of Bridgman technique. The temperature dependence of the thermal e.m.f. α in the temperature range from 205 K up to 360 K of In₂Se₃ was studied. The δ-phase In₂Se₃ sample appeared to be n-type. The ratio of the electron and hole mobilities are found to be μ_n/μ_p = 1.378. The effective masses of charge carriers are m = 1.3 × 10⁻³⁰, m = 8.27 × 10⁻³¹ kg for holes and electrons, respectively. The diffusion coefficient was estimated to be D_n = 3.37 cm²/s and D_p = 2.45 cm²/s for both electrons and holes, respectively. The mean free time between collision can be deduced to be τ_n = 70 × 10⁻¹⁶ s and τ_p = 8 × 10⁻¹⁴ s for both electrons and holes. The diffusion length of the electrons and holes are found to be L_n = 1.5 × 10⁻⁷ cm and L_p = 4.4 × 10⁻⁷ cm.     

Electric Characterization of Indium Sesquiselenide Single Crystals

Conductivity, Hall-effect measurements were performed on δ-phase In₂Se₃ single crystals, grown by the Bridgman method over the temperature range 150–428 K, in the directions perpendicular and parallel to the c-axis. The anisotropy of the electrical conductivity and of the Hall coefficient of n-type In₂Se₃ had been investigated. The values of the Hall coefficient and electrical conductivity at room temperature spreads from an order of R_H11 = 1.36 × 10⁴ cm³/coul, σ₁₁ = 4.138 × 10⁻³ Ω⁻¹ cm⁻¹ and R_H = 66.55 × 10⁴ cm³/coul, σ = 0.799 × 10⁻³ Ω⁻¹ cm⁻¹ for parallel and perpendicular to c-axis, respectively. The temperature dependence of Hall mobility and carrier concentration are also studied.     

Growth of bulk zinc chalcogenide single crystals from the vapour phase and their use for laser screens of projection colour television

Results on ZnSe, ZnSe_xS_1−x and ZnS crystal growing from the vapour phase up to 7.5 cm³ in volume are described. Crystals were grown on sapphire, ZnS, ZnSe_xS_1−x and quartz glass substrates without a contact of the growing crystal with a growth ampoule and using the molten tin as a heating medium. Large high-purity crystals with a density of etch pits of 10³ cm⁻² were obtained They exhibited an effective exciton luminescence and rather high radiation efficiency (30 ± 10% for ZnSe at T = 77 K). This made it possible to use these crystals for fabricating laser screens for a cathode ray tube. The main laser parameters obtained on a ZnSe screen at T = 80 and 300 K using a 75 keV electron beam excitation are presented. The light power output reached 0.8 W at T = 80 K; this allowed to obtain a 10 cd · m⁻² TV image of 1.5 × 2 m² in area.     

The growth of high-quality MCT films by MBE using in-situ ellipsometry

The ellipsometry and RHEED study of high-quality MCT films grown on (112)- and (130) CdTe and GaAs by MBE was carried out. The dependence of the ellipsometric parameter ψ on MCT composition is evaluated. It was shown that such parameters as growth rate, the surface roughness, initial substrate temperature, and film composition may be measured by the in-situ ellipsometry. The appearance of surface roughness was observed in the initial stage of MCT growth under various compositions (x_CdTe = 0 ÷ 0.4). The further growth at optimum conditions leads to the smoothing of the surface and supplies us with high-quality MCT films. The concentration, mobility, and life time of carriers in MCT films were respectively: n = 1.8 × 10¹⁴ ÷ 8.2 × 10¹⁵ cm⁻³, μ_n = 44000 ÷ 370000 cm² V⁻¹ s⁻¹, τ_n = 40 ÷ 220 ns; p = 1.8 × 10¹⁵ ÷ 8.4 × 10¹⁵ cm⁻³, μ_p = 215 ÷ 284 cm² V⁻¹ s⁻¹, τ_p = 12 ÷ 20 ns.     

Spectroscopic properties of a Tm3+:Bi2TeO5 single crystal

Single crystal of bismuth tellurite Bi₂TeO₅ (BTO) doped with trivalent thulium (Tm³⁺) was grown by the Czochralski method and investigated by spectroscopic techniques (absorption, emission). Absorption and emission of the Tm:BTO crystal collected in the VIS‐IR spectral range are presented. Spectroscopic features were investigated as a function of the excitation light polarisation (E//X, Y, and Z axis of optical indicatrix) and sample temperature. The oscillator strength of the ³H₆ → ³F₄ transition at 1.7 μm was determined by numerical integration of the X, Y and Z polarised absorption spectra. The obtained values are: P_X = 4.7 × 10⁻⁶, P_Y = 6.8 × 10⁻⁶ and P_Z = 5.9 × 10⁻⁶ that gives a mean value P_mean = 5.8 × 10⁻⁶. Emission was observed from the ¹G₄ and ³H₄ levels. The ³H₄ and ¹G₄ excited state dynamics was studied. Decay curves and time constants of luminescence were collected at 5 and 300 K and analysed. The ³F₄ → ³H₆ luminescence at around 1.8 μm was too weak to be acquired from the low concentrated sample. However, based on optical data it was possible to estimate the radiative probability A_rad of this transition and the ³F₄ radiative lifetime. The resultant values are: A_rad = 668 ± 0.4 s⁻¹ and τ_rad = 1.5 ms. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electron Spin Resonance of Mn2+ in Hemimorphite

The Electron Spin Resonance of Mn²⁺ in natural crystals of hemimorphite was studied at RT, X-band. No fine structure other than the central M = | + 1/2 〉 ⇆ | −1/2 > transition with allowed (Δm = 0) and forbidden (Δm = ±1) hyperfine transitions were observed. The spectrum was fitted with the spin Hamiltonian parameters g = 2.001, A = −84.6 × 10⁻⁴ cm⁻¹. The crystal field parameter D was estimated equal to (8 ± 2) × 10⁻³ cm⁻¹. The most striking result is the size of the hyperfine splitting constant favoring occupancy of sixfold coordinated sites.     

Solid–liquid interface energies in the succinonitrile and succinonitrile–carbon tetrabromide eutectic system

The equilibrated grain boundary groove shapes for the commercial purity succinonitrile (SCN) and succinonitrile–carbon tetrabromide (CTB) eutectic system were directly observed. From the observed grain boundary groove shapes, the Gibbs–Thomson coefficients for the solid SCN–liquid SCN and solid SCN–liquid SCN CTB have been determined to be (5.43±0.27)×10⁻⁸ Km and (5.56±0.28)×10⁻⁸ Km, respectively, with numerical method. The solid–liquid interface energies for the solid SCN–liquid SCN and solid SCN–liquid SCN CTB have been obtained to be (7.86±0.79)×10⁻³ J m⁻² and (8.80±0.88)×10⁻³ J m⁻², respectively from the Gibbs–Thomson equation. The grain boundary energies in the SCN and SCN rich phase of the SCN–CTB system have been calculated to be (15.03±1.95)×10⁻³ J m⁻² and (16.51±2.15)×10⁻³ J m⁻², respectively, from the observed grain boundary groove shapes. The thermal conductivity ratios of the liquid phase to the solid phase for SCN and SCN–4 mol% CTB alloy have also been measured.     

Solvus of KCI:Pb2+ Solid Solution from Flotation Measurements of Single Crystal Density

The solvus of KCl:Pb²⁺ is found in the concentration range from 1.6 × 10⁻² to 8 × 10⁻² mol.% at temperatures ranging from 450 to 250 °C. The decomposition of the solid solution after various regimes of heat treatment is judged by a change in the crystal density determined by the flotation technique.     

TSM-gewachsene Halbleiter-Einkristalle aus (Pb0,8Sn0,2)Te

By means of the Travelling Solvent Method (TSM) the authors succeeded in growing PbSnTe solid solution crystals using a simple working growing principle. Imperfections and constitution as well as electrical properties of the crystals have been investigated. The results lead to the conclusion that one can grow homogeneous, nearly perfect crystals having low carrier densities and high carrier mobilities in a relatively short time which seems to be the main advantage of the experimental techniques used. Representative values of electrical crystal parameters are p₇₇ ≦ 10¹⁷ cm⁻³, n₇₇ ≦ 10¹⁷ cm⁻³; pμ₇₇ ⋍ 1,6 × × 10⁴cm²/Vs; dimensions: 1 × 4 × 4 mm³.     

Electrical Characterization of Irradiation plus Annealing – induced VAsZnGa Pairs in p-type GaAs (Zn) Crystals

Effect of fast electron irradiation (E =2.2 Mev, ϕ_c = 1 × 10¹⁶ el/cm²) and subsequent annealings (T = 150 to 350 °C, t = 10 to 600 min) of zinc-doped p-type GaAs crystals on the formation and dissociation of V_AsZn_Ga, pairs is studied. An analysis of the formation and dissociation kinetics of V_AsZn_Ga pairs permitted to find the diffusion coefficient of radiation-induced arsenic vacancies D(D = 1.5 × 10⁻¹⁸, 1 × 10⁻¹⁷ and 5 × 10⁻¹⁷ cm²/s at 150, 175 and 200 °C accordingly), their migration energy ϵ_m(ϵ_m = 1.1 eV), the binding energy of V_AsZn_Ga, pairs ϵ_b(ϵ_b = 0.5 eV), and also their dissociation energy ϵ_d(ϵ_d = 1.6 eV).     

Preparation and properties of ultratransparent NaCl single crystals

The preparation of up to 100 mm diameter single crystalline ingots of ultratransparent NaCl by injecting the reactive atmosphere is reported. The resulting material exhibits high optical quality and bulk absorption coefficient at 10.6 μm of 0.91 × 10⁻³ cm⁻¹, close to the intrinsic value, which makes it suitable for transmissive components in high-power CO₂ lasers.     

Zur Bestimmung des effektiven Verteilungskoeffizienten von Te bei der Züchtung von GaP-Einkristallen aus nichtstöchiometrischen schmelzen

An equation for determining the effective distribution coefficient, k_eff, under the conditions of growing single crystals from non-stoichiometric melts is proposed. This equation is used for the calculation of k_eff at Te concentrations in the melt from 3.5 × 10⁻³ up to 9.1 × 10⁻² at.%. From numerous measurements a k_eff value of 0.070 with the 1 σ boundaries at 0.116 and 0.043 is found. The relatively wide spread is accounted for by the heterogeneous distribution of doping material which is due to the technique applied and to the polar properties of the GaP lattice.     

Dislocation arrangements in cyclically deformed polycrystalline molybdenum

The present paper deals with the cyclic stress-strain behaviour of polycrystalline molybdenum at room temperature and the dislocation structures built up within this material during the fatigue process. A cyclic stress-strain curve of molybdenum deformed in a strain-controlled and symmetrical push-pull test is shown. At strain amplitudes e_a < 3 × 10⁻³ arrangements of relatively homogeneously distributed dislocations are observed in the stage of the stabilization of mechanical properties. The characteristics of these dislocation arrangements are similar to those of dislocation structures of unidirectionally deformed molybdenum single crystals. At strain amplitudes e_a > 3 × 10⁻³ dislocation structures are developed with an inhomogeneous dislocation distribution (bundles structures). The dislocation density in the surface layers of fatigued specimens shows larger values than within the material. The cyclic deformation after a change from a small deformation amplitude to a larger one, or vice versa, is connected with characteristic changes of dislocation density.     

The molecular and crystal structure of 2-oxo-1-pyrrolidine-acetamide

C₆H₁₀N₂O₂, P1 , a = 6,607(2) Å, b = 8,538(2) Å, c = 6,392(2) Å, α = 102,43(2)°, β = 91,11(2)°, y = 79,82(2)°, V = 349,1 ų, Z = 2, D_m = 1,36 g × cm⁻³, D_x = 1,35 g × × cm⁻³, MoKα radiation, λ = 1.71069 Å, μ(MoKα) = 1.11 cm⁻¹. The structure was solved by direct methods. The parameters were refined by full matrix least squares technique to a final R = 0.088 for 834 reflections with ∥F₀∥ > 4σ(F₀). The dihedral angle between the least-squares plane through the pyrrolidine ring and that through the acetamide group is 90.4°. The N H … O hydrogen bonds connect molecules to form bands parallel to the z axis.     

Hyperfine structure of EPR spectra of Cr5+ ions in irradiated sodium dichromate crystals

EPR spectra are studied of X-irradiated sodium dichromate crystals grown from an aqueous solution by evaporation at 31°C. Doublet lines of EPR-absorption are attributed to the Cr⁵⁺ ions in the CrO₄³⁻ and CrO₃⁻ radicals resulting from radiation decomposition of Cr₂O₇²⁻ and being in the lattice in two unequivalent positions. Hyperfine structure caused by interaction of an unpaired electron with Cr⁵³ nucleus were observed both at liquid nitrogen and room temperatures. For the line, caused by CrO₄³⁻ radical, g_y and A_y directions coincide and angles both between A_x, g_x and A_z, g_z make up ∼ 25°. The spectrum is described by usual spin Hamiltonian for S = 1/2 with following parameters (T = 77 K): for CrO: g_z = 1.984, g_y = 1.970, g_x = 1.961, |A_z| = 8.2 · 10⁻⁴ cm⁻¹, |A_y| = 13.7 × 10⁻⁴ cm⁻¹, |A_x| = 36.1 · 10⁻⁴ cm⁻¹; for CrO₃⁻: g_z = 1.915, g_y = 1.975, g_x = 1.985, |A_z| = 32.2 · 10⁻⁴ cm⁻¹.     

Growth,Characterization and Non-Critical Phase-Matching of Niobium-Doped KTP Crystals

A series of niobium doped KTP (Nb: KTP) crystals has been grown. XRD and DTA experiments show that the Nb: KTP crystal structures do not differ from that of KTP (within experimental error) and that the melting points of the crystals increase with increasing Nb content. Synchrotron radiation topography revealed that the main defects of the crystals were growth sector boundaries, growth striations, inclusions and dislocations. Second harmonic generation experiments were performed using a 12.2% Nb:KTP and the d₁₅ and d₂₄ values of csystal were determined to be (3.7 ± 0.4) and (8.3 ± 0.8) × 10⁻⁹ esu, respectively. The relationship between phase-matching angle and Nb content for a 1.064 μm laser was determined and in the case of a 4.0% Nb:KTP crystal, non-critical phase matching was realized.     

Preparation and some properties of thallium orthothioarsenate single crystals

Growing of large (Ø 25–30 mm, L = 50–60 mm) optically homogenous single crystals of Tl₃AsS₄ using the Bridgman-Stockbarger method is described. Tl₃AsS₄ is orthorhombic (Pnma), a = 8.85 ± 0.03, b = 10.86 ± 0.03, c = 9.18 ± 0.03 Å; z = 4; ϱ_x = 6.15 g · cm⁻³; ϱ_p = 6.15 ± 0,03 g · cm⁻³, T_m = 424 ± 3°C, Moh's hardness = 3, microhardness and ultrasonics velocity along x, y, z are 65–85 kg · mm⁻² and 2.16 – 2.37 · 10⁵ cm · sec⁻¹, respectively. The crystals possess perfect cleavage plane (010). Their transparency range is 0.6–12 microns. – Unsuccessful attempts to obtain Tl₃AsS₄ and its alloys in the vitreous state were taken. The possibilities of glass formation and boundaries of the vitreous region in the system Tl–As–S based on the characteristic features of the melt forming structural units are analyzed.     

Crystal growth and spectral properties of Nd:Ca5(BO3)3F

A neodymium doped Ca₅(BO₃)₃F single crystal with size up to 51×48×8 mm³ has been grown by the top seeded solution growth (TSSG) technique with a Li₂O‐B₂O₃‐LiF flux. The spectra of absorption and fluorescence were measured at room temperature. According to Judd‐Ofelt (J‐O) theory, the spectroscopic parameters were calculated and the J‐O parameters Ω₂, Ω₄, Ω₆ were obtained as follows: Ω₂ = 1.41×10⁻²⁰cm², Ω₄ = 3.18×10⁻²⁰cm², Ω₆ = 2.11×10⁻²⁰cm². The room temperature fluorescence lifetime of NCBF was measured to be 51.8 μs. According to the J‐O paramenters, the emission probabilities of transitions, branching ratios, the radiative lifetime and the quantum efficiency from the Nd^{3+ 4}F_3/2 metastable state to lower lying J manifolds were also obtained. In comparasion with other Nd‐doped borate crystals, the calculated and experimental parameters show that NCBF is a promising SFD crystal.