Spectroscopic study of double sodium-yttrium fluoride crystals doped with erbium Na<Subscript>0.4</Subscript>Y<Subscript>0.6</Subscript>F<Subscript>2.2</Subscript>:Er<Superscript>3+</Superscript>: I. Intensities of luminescence spectra and kinetics of luminescence

Na_0.4Y_0.6F_2.2:Er³⁺ (NYF:Er) crystals with an erbium concentration as high as 100 at. % (Na_0.4Er_0.6F_2.2) were grown by the Bridgman-Stockbarger method. The optical spectra were investigated at low (6 K) and room temperatures. It is shown that the absorption spectrum of NYF:Er crystals contains wide bands (790–801 and 965–980 nm) corresponding to the emission range of laser diodes. The peak absorption cross section σ_a for the band peaked at λ=970.4 nm is 0.15×10^?20 cm². On the basis of the analysis of the absorption and luminescence spectra at low (6 and 12 K) temperatures, the structure of the Stark splitting of erbium levels was determined as a structure of quasi-centers for which Stark components are inhomogeneously broadened. The oscillator strengths of the transitions from the ground state of erbium to excited multiplets were calculated from the absorption spectra measured at T=300 K, and the intensity parameters Ω_t were determined by the Judd-Ofelt method: Ω₂=1.65×10^?20 cm², Ω₄=0.56× 10^?20 cm², and Ω₆=1.01×10^?20 cm². These values of the intensity parameters were used to calculate the probabilities of radiative transitions and the branching ratios. The rates of multiphonon nonradiative transitions in NYF: Er were estimated. The luminescence decay kinetics for radiative levels of erbium ions upon their selective excitation by nanosecond laser pulses was studied. The intracenter lifetimes of radiative levels of erbium ions were determined from the luminescence kinetics upon selective ion excitation by low-intensity light in a sample with a low erbium concentration (0.5%). It is demonstrated that, with an increase in temperature from 6 to 300 K, luminescence from the ⁴ G _11/2, ² G(H)_9/2, and ⁴ F _9/2 levels is quenched as a result of multiphonon nonradiative transitions. Luminescence from the ⁴ I _9/2 level is quenched only insignificantly with increasing temperature, and no quenching of luminescence from the ⁴ I _11/2 and ⁴ I _13/2 levels is observed. The spectra of steady-state luminescence of NYF:Er(0.5–15%) crystals were investigated upon broadband excitation by UV and UV-visible lamp light and selective time-resolved laser excitation. It is shown that low-lying levels of erbium ions separated by an energy gap smaller than 2500 cm^?1 are populated via cascade mechanisms. On the basis of the results obtained, it is concluded that NYF:Er ³⁺ crystals are promising candidates for active media of tunable diode-pumped lasers.     

Low-temperature time-resolved VUV luminescence spectroscopy of SrF<Subscript>2</Subscript>: Er<Superscript>3+</Superscript> crystals

Time-resolved excitation and emission spectra of SrF₂: Er³⁺ upon selective excitation with synchrotron radiation in the VUV and ultrasoft x-ray ranges at T = 8 K were studied. The VUV luminescence of SrF₂: Er³⁺ derives from high-energy interconfiguration 4f¹⁰5d-4f¹¹ transitions in the Er³⁺ ion. The VUV emission spectrum revealed, in addition to the 164.5-nm band (millisecond-range kinetics), a band at 146.4 nm (with a decay time of less than 600 ps). The formation of excitation spectra for the f-f and f-d transitions in the Er³⁺ ion is discussed.     

Thermal quenching of luminescence of BaY<Subscript>2</Subscript>F<Subscript>8</Subscript> crystals activated with Er<Superscript>3+</Superscript> and Tm<Superscript>3+</Superscript> ions

Thermal quenching of interconfigurational 5d-4f luminescence of Er³⁺ and Tm³⁺ ions in BaY₂F₈ crystals is studied in the temperature range of 330–790 K. The quenching temperatures are ~575 and ~550 K for Er³⁺ and Tm³⁺, respectively. It is shown that quenching of 5d-4f luminescence of Tm³⁺ ions is caused by thermally stimulated ionization of 5d electrons to the conduction band.     

Scintillation neutron detectors based on <Superscript>6</Superscript>Li-silica glass doped with cerium

The photoluminescence (PL), PL excitation, and PL decay kinetics of ⁶Li₂O-MgO-SiO₂-Ce glasses were studied using time-resolved VUV spectroscopy. The Ce³⁺ ion PL excitation spectrum contains a known group of structural bands at 4.4–5.2 eV caused by 4f → 5d transitions. Moreover, features at 6.4–7.7 eV were detected and their nature is discussed. At an exciting photon energy E_exc > 25 eV, the photon multiplication effect manifests itself. Based on ⁶Li-silica glasses, a scintillation neutron detector with improved parameters was developed and produced.     

VUV luminescence of Er<Superscript>3+</Superscript> ions in LiYF<Subscript>4</Subscript> and BaY<Subscript>2</Subscript>F<Subscript>8</Subscript> crystals

Vacuum ultraviolet luminescence of Er³⁺ ions in LiYF4 and BaY₂F₈ crystals has been investigated. It is revealed that under excitation by 193 nm radiation from an ArF excimer laser the interconfigurational 5d–4f radiative transitions in Er³⁺ ions are observed. It is shown that from the LiYF₄:Er crystal only the spin-forbidden luminescence (λ = 165 nm) is detected, whereas both the spin-forbidden (λ = 169 nm) and spin-allowed (λ = 160.5 nm) components are observed from the BaY₂F₈:Er crystal.     

Effective excitation cross section and lifetime of Er<Superscript>3+</Superscript> ions in Si: Er light-emitting diodes fabricated by sublimation molecular-beam epitaxy

A series of Si: Er electroluminescent diode structures is fabricated by sublimation molecular-beam epitaxy. The diode structures efficiently emit at a wavelength of 1.5 μm under conditions of p-n junction breakdown at room temperature. The effective cross section of excitation of Er³⁺ ions with hot carriers heated by the electric field of a reverse-biased p-n junction and the lifetime of Er³⁺ ions in the first excited state ⁴I_13/2 are determined for structures that emit in a mixed breakdown mode and are characterized by the maximum intensity and excitation efficiency of the Er³⁺ electroluminescence.     

Correction of the band gap of Y<Subscript>2</Subscript>O<Subscript>3</Subscript>:Eu<Superscript>3+</Superscript> phosphor

Submicron samples of Y₂O₃:Eu³⁺ phosphor with elevated photoluminescence (PL) efficiency and activator concentration of 9 at % obtained by the sol–gel method were investigated by diffuse reflection spectroscopy and PL spectroscopy. It is found that the diffuse reflection spectrum in the vicinity of the fundamental absorption edge (<300 nm) is distorted by the superposition of the PL of Eu³⁺ ions, as a result of which the calculated value of optical band gap E _g of the Y₂O₃ matrix is overestimated. An algorithm for eliminating the PL influence on the absorption edge is proposed, and the correct E _g values are found to be 4.61 ± 0.12 and 4.50 ± 0.12 eV for annealing at 700 and 1300°C, respectively.     

Green,blue, red,near-infrared up-conversion luminescence of Yb<Superscript>3+</Superscript>/Er<Superscript>3+</Superscript>/Tm<Superscript>3+</Superscript> co-doped YVO<Subscript>4</Subscript> nanoparticles

YVO₄:Yb³⁺,Er³⁺; YVO₄:Yb³⁺,Tm³⁺; and YVO₄:Yb³⁺,Er³⁺,Tm³⁺ were all synthesized via sol-gel method with a subsequent thermal treatment. Specifically, YVO₄:Yb³⁺,Er³⁺,Tm³⁺ phosphors were prepared with different annealing temperatures to study the influence of temperature. The transmission electron microscope (TEM), scanning electron microscope (SEM), X-ray diffractometer (XRD), and photoluminescent (PL) spectrofluorometer were used to investigate the morphology, crystal structure, and up-conversion luminescent properties of all samples. In summary, all samples were granular-like nanoparticles and well crystallized with the same tetragonal phase as YVO₄. Under the irradiation at 980 nm, YVO₄:Yb³⁺,Er³⁺ phosphors can generate green emission at 525 and 553 nm and red emission at 657 nm, while YVO₄:Yb³⁺,Tm³⁺ phosphors can generate blue emission at 476 nm, red emission at 648 nm, and near-infrared emission at 800 nm. Notably, YVO₄:Yb³⁺,Er³⁺,Tm³⁺ samples can exhibit green emission, blue emission, red emission, and near-infrared emission at the same time, which might endow the as-prepared samples with potential applications in many fields, such as luminous paint, infrared detection, and biological label.     

Spectra of optical absorption and energy levels diagram of Er<Superscript>3+</Superscript> ions in bulk crystals of aluminum nitride

The absorption spectra of the Er³⁺ ions embedded in the AlN matrix have been investigated. The admixture of erbium was introduced in bulk AlN crystals by diffusion. The absorption lines, which are associated with the intraconfigurational electronic f–f-transitions from the ground ⁴ I _15/2-state to the levels of ion Er³⁺ excited states have been observed in the spectral range of 370–700 nm. The transitions to the state levels ⁴ F _9/2, ² H _11/2, ⁴ F _7/2, ⁴ F _5/2, ² H _9/2, and ⁴ G _11/2 have been investigated in detail at the temperature T = 2 K. The number of the observed lines for these transitions coincides with the theoretically possible one for the electronic f–f-transitions in the ions Er³⁺, which are in the crystal field with the symmetry below cubic. The narrowness of the observed lines and their number convincingly testify the replacement of preferably one regular crystalline position by erbium ions. The implementation of Er³⁺ in the Al³⁺ position with the local symmetry C _3v appears the most probable. The energy positions of the levels of excited states for the investigated transitions have been determined. The diagram of the Er³⁺ ion energy levels in the AlN crystals has been built.     

Concentration quenching and migration of excitations in a bulk Cd<Subscript>0.5</Subscript>Mn<Subscript>0.5</Subscript>Te crystal

The curves of intracenter luminescence decay for Mn²⁺ ions in the Cd_0.5Mn_0.5Te semiconductor solid solution, obtained in a low-temperature experiment, have been simulated by the Monte Carlo method. The features of the kinetics of the 2-eV band in the time interval where significant nonexponentiality of relaxation at different points of the emission band profile manifests itself, as well the integral kinetics and energy relaxation, have been considered. Migration of ion excitations and concentration quenching (which was previously disregarded) are considered to be the main mechanisms determining the kinetic curve formation. It was established that excitation by 2.34-eV photons leads to both selective (intracenter) and band excitation of Mn²⁺ ions. Comparison of the results of numerical simulation and experiment showed that the characteristic values of the migration and quenching rates (W _m and W _q , respectively) are close in magnitude and W _{q, m} ≈ 0.1/τ, where τ is the lifetime at the long-wavelength band wing with the exponential kinetics. The estimated quantum yield (0.56) indicates significant influence of the concentration quenching on the 2-eV luminescence quantum yield in Cd_{1 ? x} Mn _x Te and Zn_{1 ? x} Mn _x S crystals with a high concentration of Mn²⁺ ions.     

Laser spectroscopy of Eu<Superscript>3+</Superscript> cubic centers in the CaF<Subscript>2</Subscript> bulk single crystal

The optical transitions ⁵ D _{0, 1} → ⁷ F _J (J = 0, 1, ..., 6) of Eu³⁺ cubic centers in the CaF₂ single crystal are investigated using combined excitation and emission spectroscopy at different time delays after the excitation pulse. The energies of the Stark sublevels of the ⁷ F _J ground states are determined.     

Intensity parameters for Er<Superscript>3+</Superscript> ions in calcium-niobium-gallium garnet crystals

Based on the analysis of the absorption spectra of Er-doped calcium-niobium-gallium garnet (Er:CNGG) crystals according to the Judd-Ofelt theory, the intensity parameters for these crystals are determined to be Θ₂ = 3.43 × 10^?20 cm² Θ₄ = 1.20 × 10^?20 cm², and Θ₆ = 0.58 × 10^?20 cm². The parameters found are compared with the intensity parameters for other laser oxide crystals. Using these intensity parameters, the probabilities of radiative transitions between the energy levels of Er³⁺ ions in CNGG crystals and the luminescence branching ratios β_JJ’ are calculated. From the measured lifetime of the ⁴ I _11/2 level of Er³⁺ ions (τ = 626 μs) and the probability of the radiative transition from this level (A = 192 s^?1), it is found that about 88% of the excitation energy in the Er:CNGG crystals is nonradiatively transferred from the ⁴ I _11/2 to the ⁴ I _13/2 level. It is suggested that an increase in the oscillator strength and in the line strength of the ⁴ I _15/2 → ² H _11/2 transition of Er³⁺ in CNGG crystals, as well as an increase in the intensity parameter Θ₂ with respect to the corresponding parameters for other garnet crystals are caused by the existence in CNGG crystals of Er³⁺ centers with the environment symmetry lower than D ₂.     

Energy transfer from the host to Er<Superscript>3+</Superscript> dopants in semiconductor SnO<Subscript>2</Subscript> nanocrystals segregated in sol–gel silica glasses

Undoped and Er³⁺-doped glass–ceramics of composition (100−x)SiO₂–xSnO₂, with x = 5 or 10 and with 0.4 or 0.8 mol% of Er³⁺ ions, were synthesised by thermal treatment of precursor sol–gel glasses. Structural studies were developed by X-Ray Diffraction. Wide band gap SnO₂ semiconductor quantum-dots embedded in the insulator SiO₂ glass are obtained. The mean radius of the SnO₂ nanocrystals, ranging from 2 to 3.2 nm, is comparable to the exciton Bohr radius. The luminescence properties have been analysed as a function of sample composition and thermal treatment. The results show that Er³⁺ ions are partially partitioned into the nanocrystalline phase. An efficient UV excitation of the Er³⁺ ions by energy transfer from the SnO₂ nanocrystal host is observed. The Er³⁺ ions located in the SnO₂ nanocrystals are selectively excited by this energy transfer mechanism. On the other hand, emission from the Er³⁺ ions remaining in the silica glassy phase is obtained by direct excitation of these ions.     

Time-Resolved Vacuum Ultraviolet Spectroscopy of Er<Superscript>3+</Superscript> Ions in the SrF<Subscript>2</Subscript> Crystal

The photoluminescence and photoexcitation spectra as well as the luminescence decay kinetics of Er³⁺ ions in the visible ultraviolet and vacuum ultraviolet (VUV) regions have been studied by the method of low-temperature, time-resolved VUV-spectroscopy on excitation by synchrotron radiation. In the VUV spectral region of the luminescence of SrF₂:1% Er³⁺, the 146.5-nm band with a time of decay of less than 0.6 nsec was revealed together with the well-known emission band at 164.3 nm (decay constant in the microsecond range). Its possible nature is discussed. The specific features of the formation of photoexcitation spectra of the f-f and f-d transitions in the Er³⁺ ion are considered. Competition between the processes of excitation of f-f and d-f luminescence has been revealed. It manifests itself in the inverse relationship of their photoexcitation spectra in a range of energies of incident photons that are close to the position of the 4fⁿ⁻¹5d configuration levels. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 4, pp. 519–523, July–August, 2005.     

Spectroscopic study of erbium-activated crystals of double calcium yttrium fluoride Ca<Subscript>0.89</Subscript>Y<Subscript>0.11</Subscript>F<Subscript>2.11</Subscript>:Er<Superscript>3+</Superscript>: I. Intensity of spectra and luminescence kinetics

Ca_0.89Y_0.11F_2.11:Er³⁺ (CYF:Er) crystals with an erbium content of 1–15 at % have been grown. The optical spectra and luminescence kinetics of CYF:Er crystals have been investigated at low (～5 K) and room temperatures. Based on an analysis of the absorption spectra at low temperature, the structure of Stark splitting of erbium levels in CYF:Er crystals is determined. Room-temperature absorption spectra are used to calculate the spectra of absorption cross sections and oscillator strengths of transitions from the erbium ground state to excited multiplets. It is shown that the absorption spectrum of CYF:Er crystals contains broad bands in the ranges of 790–815 and 965–980 nm, which correspond to the range of emission of laser diodes. For the band peaking near 967 nm, the peak absorption cross section is σ _abs ^max = 2.7 × 10^?21 cm². The intensity parameters are determined by the Judd-Ofelt method to be Ω₂ = 1.39 × 10^?20, Ω₄ = 1.34 × 10^?20, and Ω₆ = 2.24 × 10^?20 cm². The radiative transition probabilities, radiative lifetimes, and branching ratios are calculated with these values. The luminescence decay kinetics from excited erbium levels upon selective excitation is investigated and the experimental lifetimes of the 4F _9/2, ⁴ S _3/2, and ⁴ G _11/2 radiative erbium levels are determined. The dependences of multiphonon relaxation rates on the energy gap in CYF:Er crystals are obtained. The rates of nonradiative multiphonon relaxation from radiative erbium levels are determined.     

Searching for rare cluster configurations of <Superscript>14</Superscript>C nuclei in the pion absorption reaction

Analysis of the two-dimensional Dalitz plot measured in the reaction ¹⁴C(π^–, pd)X allows us to follow the absorption of pions by cluster ³p and identify signs of the configuration ³p + ¹¹Li in the ¹⁴C nucleus. The highly excited state of ^12,13Be beryllium isotopes with excitation energies E* ≈ 30 MeV and which decay with the emission of hydrogen isotopes is observed for the first time: ¹²Be* → p + ¹¹Li and ¹³Be* → d + ¹¹Li.     

Luminescence of Tl<Superscript>+</Superscript> ions in a KZnF<Subscript>3</Subscript> crystal

The luminescence spectra of a KZnF₃: Tl⁺ crystal are investigated in the energy range from 4.75 to 5.9 eV at temperatures of 10–300 K upon excitation into the A absorption band (5.7–6.3 eV). At T=300 K, the luminescence spectra exhibit an intense band with a maximum at 5.45 eV, which is attributed to single Tl⁺ ions substituted for K⁺ ions. The 5.723-eV intense narrow band observed at T<20 K is assigned to the ³Γ_1u-¹Γ_1g zero-phonon transition, which is weakly allowed by the hyperfine interaction. The luminescence decay is studied as a function of temperature. The main characteristics of the luminescence spectra are adequately described in terms of the semiclassical theory based on the Franck-Condon principle and the Jahn-Teller effect for an excited sp configuration of the Tl⁺ ion with the use of the parameters obtained earlier from analyzing the absorption spectra of the system under investigation.     

Edge photoluminescence spectra and the intensity of the intracenter <Emphasis Type="Italic">f</Emphasis>-<Emphasis Type="Italic">f</Emphasis> transitions in Er-and Sm-doped GaN crystals

Doping of GaN crystals prepared by various methods (HVPE and MOCVD) with various degrees of perfection of the mosaic structure, using rare-earth (RE) ions has been studied. An analysis of the shape of the photoluminescence spectra obtained before and after the doping showed that, as the defect concentration decreases, the intracenter f-f transitions characteristic of RE ions, at 1.54 and 0.54 μm in Er³⁺ and 0.72 μm in Sm²⁺, become observable. The intracenter f-f transitions of RE ions are seen, as a rule, in epitaxial layers with well-aggregated and relaxed domains and are absent in the case of a mosaic structure containing domains in the near-surface part of the epitaxial layer that are not fully coalesced. RE doping of the crystals under study was observed to initiate defect gettering. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 5, 2004, pp. 814–819. Original Russian Text Copyright ? 2004 by Krivolapchuk, Lundin, Mezdrogina, Nasonov, Rodin, Shmidt.     

Study of absorption spectra of Er<Superscript>3+</Superscript> in KTaO<Subscript>3</Subscript> crystals

The first results of the study of optical absorption spectra of KTaO₃: Er³⁺ crystals are presented. In the 350–660-nm region, lines are observed deriving from intraconfigurational electronic transitions from the ⁴ I _15/2 ground state to levels of the ⁴ F _9/2, ⁴ S _3/2, ² H _11/2, ⁴ F _7/2, ⁴ F _5/2(⁴ F _3/2), ² G _9/2, and ⁴ G _11/2 excited states of the Er³⁺ ions. A comprehensive study of transitions to the ⁴ F _9/2, ⁴ S _3/2, ² H _11/2, and ⁴ F _7/2 levels at 77 K is carried out. The number of lines observed for the above transitions fits the theoretically possible number for ?-? electronic transitions in Er³⁺ ions in the cubic crystal field. In the case of a differently charged substituted ion, this situation occurs only under nonlocal impurity charge compensation. The energies of the excited state levels for the transitions under study are determined.     

Electron paramagnetic resonance of Yb<Superscript>3+</Superscript> ions in a concentrated YbRh<Subscript>2</Subscript>Si<Subscript>2</Subscript> compound with heavy fermions

The EPR signal from localized ytterbium ions was observed in an undoped YbRh₂Si₂ compound with heavy fermions in the temperature range from 1.5 to 25 K. The exponential contribution dominating the temperature dependence of EPR line width at temperatures above 15 K was shown to be caused by the random transitions from the ground to the first excited Stark sublevel of the Yb³⁺(4f¹³) ion with the activation energy Δ=115 K.