Modified Lanthanum Zirconium Oxide buffer layers for low-cost,high performance YBCO coated conductors

The pyrochlore Lanthanum Zirconium Oxide, La₂Zr₂O₇ (LZO), has been developed as a potential replacement barrier layer in the standard RABiTS three-layer architecture of physical vapor deposited CeO₂ cap/YSZ barrier/Y₂O₃ seed on Ni–5%W metal tape. The main focus of this research is to ascertain whether: (i) we can further improve the barrier properties of LZO; (ii) we can modify the LZO cation ratio and still achieve a high level of performance; and (iii) it is possible to reduce the number of buffer layers. We report a systematic investigation of the LZO film growth with varying compositions of La:Zr ratio in the La₂O₃–ZrO₂ system. Using a metal–organic deposition (MOD) process, we have grown smooth, crack-free, epitaxial thin films of La_xZr_1?xO_y (x = 0.2–0.6) on standard Y₂O₃ buffered Ni–5W substrates in short lengths. Detailed XRD studies indicate that a single epitaxial LZO phase with only (0 0 1) texture can be achieved in a broad compositional range of x = 0.2–0.6 in La_xZr_1?xO_y. Both CeO₂ cap layers and MOD–YBCO films were grown epitaxially on these modified LZO barriers. High critical currents per unit width, I_c of 274–292 A/cm at 77 K and self-field were achieved for MOD–YBCO films grown on La_xZr_1?xO_y (x = 0.4–0.6) films. These results indicate that LZO films can be grown with a broad compositional range and still support high performance YBCO coated conductors. In addition, epitaxial MOD La_xZr_1?xO_y (x = 0.25) films were grown directly on biaxially textured Ni–3W substrates. About 3 μm thick YBCO films grown on a single MOD–LZO buffered Ni–3W substrates using pulsed laser deposition show a critical current density, J_c, of 0.55 MA/cm² (I_c of 169 A/cm) at 77 K and 0.01 T. This work holds promise for a route for producing simplified buffer architecture for RABiTS based YBCO coated conductors.     

Epitaxial growth of Ce2Y2O7 buffer layers for YBa2Cu3O7−δ coated conductors using reel-to-reel DC reactive sputtering

Biaxially textured Ce₂Y₂O₇ (CYO) films were deposited on Ni–5at.%W (Ni–5W) tapes by a DC reactive sputtering technique in a reel-to-reel system. Subsequent YBa₂Cu₃O_7?δ (YBCO) films were prepared using pulsed laser deposition leading to a simplified coated conductor architecture of YBCO/CYO/Ni–5W. X-ray diffraction measurements revealed an epitaxial growth of the CYO buffer layer with a texture spread down to 2.2° and 4.7° for the out-of-plane and in-plane alignment, respectively. Microstructural investigations showed a dense, smooth and crack-free surface morphology for CYO film up to a thickness of 350 nm, implying an effective suppression of cracks due to the incorporation of Y in CeO₂. The superconducting transition temperature T_c of about 90 K with a narrow transition of 0.8 K and the inductively measured critical current density J_c of about 0.7 MA/cm² indicate the potential of the single CYO buffer layer.     

YBCO films buffered by pyrochlore Nd2Mo2O7 layer on YSZ substrates by chemical solution deposition

A chemical solution deposition process was used to grow epitaxial Nd₂Mo₂O₇ (NMO) buffer layers on YSZ substrates to produce YBa₂Cu₃O_7?δ (YBCO) coated conductors. The NMO precursor solution prepared using metal acetylacetonates was spin-coated onto single crystal YSZ substrate of 10 mm × 10 mm in size at 3000 rpm for 30 s and heat-treated at 1000 °C for 2 h in Ar after calcinated at 550 °C for 1 h. The YBCO film was deposited by TFA-MOD route on top of the NMO/YSZ architecture. The phase purity and the crystalline orientation of NMO and YBCO films were evaluated by X-ray diffraction (XRD). Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used to observe their microstructure and their surface roughness. The critical current density (J_c) of YBCO film on NMO/YSZ is 1.8 MA/cm² at 77 K in self-field, which indicates that the Nd₂Mo₂O₇ is a potential buffer for YBCO coated conductor.     

Preparation of YBCO film for microwave filter using a hybrid route

Pure (0 0 l)-textured CeO₂ buffer layers were deposited on single crystal r-plane Al₂O₃ (1–102) substrate by a hybrid process which was combined with magnetron sputtering for the seed layer and metal–organic deposition for the subsequent layer. Strongly c-axis oriented YBCO films were deposited on the CeO₂ buffered r-cut Al₂O₃ (1–102) substrates. Atomic force microscope and scanning electronic microscopy results show that the prepared buffers and YBCO films are relatively dense and smooth. The critical current of the YBCO films exceeds 1.5 MA/cm² at 77 K with the superconducting transition temperature of 90 K. The surface resistivity is as below as 14 μΩ at 1 GHz frequency. The results demonstrate that the hybrid route is a very promising method to prepare YBCO films for microwave application, which can combine the sputtering advantage for preparing of highly c-axis oriented CeO₂ buffer layers and the advantages of metal–organic deposition with rapid processing, low cost and easy preparation of large-area YBCO films.     

Reduced crystallization time of YBCO in a fluorine-free MOD process using uv-lamp irradiation

We have studied the crystallization time dependence of the epitaxial YBCO films (t = 0.8 μm) grown on CeO₂-buffered SrTiO₃ substrates by fluorine-free metal–organic deposition using uv-lamp irradiation (uv-MOD). As increasing the time (T₀) for heat treatment at the reaction temperature (760 °C) from 0 to 90 min, J_c and the YBCO 0 0 l XRD intensity are steeply increased and reach their maximum values at T₀ = 10 min. This suggests that the heat treatment required for YBCO crystallization is significantly shortened in uv-MOD compared to conventional all-pyrolytic F-free MOD processes, which consume T₀ = 90–150 min for crystallizing 0.4–0.5-μm-thick films. Scanning electron microscope measurement revealed a drastic change in surface morphology between T₀ = 8 and 10 min, showing a good correspondence to the J_c and XRD data which suggest that the epitaxial growth reaches the film surface at the very early stage in the heat treatment.     

Reel-to-reel fabrication of meter-long YBCO coated conductor

YBa₂Cu₃O_7?δ (YBCO) superconductors were coated on the CeO₂/YSZ/Y₂O₃ buffered Ni-5at%W tapes by a reel-to-reel pulsed laser deposition (PLD). The process of a multi-layer deposition of YBCO film was explored. X-ray diffraction texture measurements showed good both in-plane and out of plane crystalline orientations in YBCO films. The average values calculated at a full width at half maximum (FWHM) of the peaks from phi-scans (φ) and omega (ω) scans for one meter-long YBCO tape were 7.49° and 4.71°, respectively. The critical current (I_c) was over 200 A/cm-width at 77 K and under self-field for meter-long YBCO tape. The critical transition temperature of the YBCO tape was typically as 90.1 K with 0.5 K transition widths.     

Texture analysis of RF-sputtered CeO2 buffer layers and superconducting MOD-YBCO films

CeO₂ buffer layers were deposited on YSZ single-crystal substrates using an RF-sputtering method. The development of crystalline textures of sputtered CeO₂ films at different sputtering pressure and their effects on YBCO films, deposited by Metal Organic Deposition (MOD), were investigated. Both CeO₂ and subsequent YBCO films grew well epitaxially. The relative XRD peak intensities of CeO₂ (2 0 0) to substrate YSZ (2 0 0) increased with deposition pressure in the range of 3–5 mTorr and were inversely proportional to the θ–2θ scan FWHM values of CeO₂ (2 0 0). Also, the reaction layers of BaCeO₃ were thicker in the samples with lower CeO₂ (2 0 0) intensities and poor out-of-plane alignment when CeO₂ were deposited at the lower pressure of 3.3 mTorr. It is noted, however, that the superconducting layer grew well epitaxially on these BaCeO₃ layers, possibly due to the epitaxial relation between CeO₂ and YBCO. The superconducting critical currents of MOD-YBCO films showed an increasing tendency as both the Δ2θ (CeO₂) and BaCeO₃ peak intensities decreased.     

Deposition of Gd2Zr2O7 single buffer layers with different thickness for YBa2Cu3O7−δ coated conductors on metallic substrates

A series of Gd₂Zr₂O₇ (GZO) single buffer layers with different thicknesses were epitaxially grown on highly textured Ni–5 at.% W tapes using pulsed laser deposition. These allow the subsequent growth of high-quality superconducting YBa₂Cu₃O_7?δ layers. The superconducting transition temperature T_c reaches a maximum value of 92.4 K as well as a narrow transition width of 0.8 K for the optimized GZO layer thickness. The inductive measurements show the critical current density as high as 1.2 MA/cm² at 77 K in self-field, indicating that a GZO single buffer layer is a suitable alternative for simplifying the second generation high T_c superconducting coated conductors architecture.     

Preparation of solution-based YBCO films with BaSnO3 particles

The YBCO films with BaSnO₃ (BSO) particles were prepared on LAO (0 0 1) substrates by metal organic deposition using trifluoroacetates (TFA-MOD) via introducing SnCl₄ powders into the YBCO precursor solution. It was found that with the increase of the SnCl₄ contents, the slower decomposition and higher temperature for nucleation during the reaction were requested compared to that of pure YBCO film. The YBCO films with different contents of Sn with dense surface and well c-alignment were obtained under optimized heat treatment, and the BaSnO₃ phases were detected by XRD analysis. Litter effect of BSO particles on the T_c and J_c values of YBCO films was found. All YBCO films with BSO particles had T_c values over 90 K and J_c values over 1 MA/cm². A significant enhancement of J_c was observed for YBCO films with BSO particles compared to that of pure YBCO film by the field dependence of J_c values. The best property was obtained for YBCO film with 6 mol.% Sn at 77 K under magnetic field. The results showed that the J_c value of YBCO film with 6 mol.% Sn was enhanced by a factor of 2 in 2 T, and over a factor of 10 beyond 4 T compared to that of pure YBCO film.     

30 mm wide process of GdBCO PLD/clad-type textured metal substrates

Gd₁Ba₂Cu₃O_x (GdBCO) coated conductors using bi-axially textured clad-type substrates have been developed for high temperatures superconducting (HTS) power cables. In this project, large amount of coated conductors (CCs) are necessary for the several tests of basic properties of HTS power cables and the fabrication of a 15 m long 3-in-one HTS model cable. In order to ensure an adequate amount and properties of coated conductors, the stable manufacturing technology and the high production rate at each process are required.In this report, we have newly installed a high power laser of 300 W for the PLD system, resulting in improvement of the manufacturing stability and the deposition rate for GdBCO film. In addition, we have optimized target–substrate distance in PLD process, and the uniformity of I_c distribution across 30 mm wide tapes were remarkably improved. Furthermore, the surface morphology of buffer layers were enhanced by optimizing the deposition condition using electron beam (EB) evaporation method, and the maximum I_c value for a short sample has achieved 497 A/cm at 77 K in the self-field. Based on these progresses, we are currently developing the stable manufacturing process for long CCs with over 400 A/cm.     

Characterization on electron beam evaporated α-MoO3 thin films by the influence of substrate temperature

Electrochromic molybdenum oxide (MoO₃) thin films were prepared by electron beam evaporation technique using the dry MoO₃ pellets. The films were deposited on glass and fluorine doped tin oxide (SnO₂:F or FTO) coated glass substrates at different substrate temperatures like room temperature (RT, 30 °C), 100 °C and 200 °C. The influence of substrate temperature on the structural, surface morphological and optical properties of the films has been studied. The X-ray diffraction analysis showed that the films are having orthorhombic phase MoO₃ (α-MoO₃) with 〈1 1 0〉 preferred orientation. The laser Raman scattering spectrum shows the polycrystalline nature of MoO₃ films deposited at 200 °C. The Raman-active band at 993 cm⁻¹ is corresponding to Mo–O stretching mode that is associated with the unique character of the layered structure of orthorhombic MoO₃. Needle—like morphology was observed from the SEM analysis. The energy band gap of MoO₃ films was evaluated which lies between 2.8 and 2.3 eV depending on the substrate temperature and substrates. The decrease in band gap value with increasing substrate temperature is owing to the oxygen-ion vacancies. The absorption edge shift shows the coloration effect on the films.     

Effect of air humidity on the microstructure and properties of large-area YBa2Cu3O7−x films by TFA-MOD process

Large-area YBa₂Cu₃O_7?x (YBCO) films had been successfully fabricated on LaAlO₃ (LAO) substrate by metalorganic deposition using trifluoroacetates (TFA-MOD) and the effect of air humidity on the structure and properties of YBCO films was systematically investigated. The precursor coating process was performed in the air humidity range of 70–40%. According to the X-ray diffraction (XRD) and scanning electron microscopy (SEM) images, the films prepared at high air humidity showed poor electrical performance due to large pores and impurity phases. In contrast, dense, homogeneous and epitaxially grown YBCO films prepared at low air humidity with the critical current densities of 3.8–5.0 MA cm^?2 at 77 K had been obtained.     

Structural and optical properties of Mn-doped ZnO nanocrystalline thin films with the different dopant concentrations

The transparent nanocrystalline thin films of undoped zinc oxide and Mn-doped (Zn_1−xMn_xO) have been deposited on glass substrates via the sol–gel technique using zinc acetate dehydrate and manganese chloride as precursor. The as-deposited films with the different manganese compositions in the range of 2.5–20 at% were pre-heated at 100 °C for 1 h and 200 °C for 2 h, respectively, and then crystallized in air at 560 °C for 2 h. The structural properties and morphologies of the undoped and doped ZnO thin films have been investigated. X-ray diffraction (XRD) spectra, scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) were used to examine the morphology and microstructure of the thin films. Optical properties of the thin films were determined by photoluminescence (PL) and UV/Vis spectroscopy. The analyzed results indicates that the obtained films are of good crystal quality and have smooth surfaces, which have a pure hexagonal wurtzite ZnO structure without any Mn related phases. Room temperature photoluminescence is observed for the ZnO and Mn-doped ZnO thin films.     

Growth-induced perpendicular magnetic anisotropy and clustering in NixPt1−x alloys

Polycrystalline and epitaxial (1 0 0), (1 1 0), and (1 1 1)-oriented Ni₃Pt, NiPt, and NiPt₃ films were deposited over a range of growth temperatures from 80°C to 700°C. Films grown at moderate temperatures (200–400°C) exhibit growth-induced properties similar to Co–Pt alloys: enhanced and broadened Curie temperature, perpendicular magnetic anisotropy and large coercivity. As in Co–Pt, the magnetic properties suggest a clustering of Ni into platelets on the growth surface, as the films are being grown. Unlike Co–Pt, however, NiPt films exhibit a strong orientational dependence of anisotropy and enhanced Curie temperature, possibly resulting from different types of surface reconstructions which affect the growth surface.     

Flux pinning by discontinuous columnar defects in 74 MeV Ag-irradiated YBa2Cu3O7 coated conductors

Linear damage tracks are created in production-quality YBCO coated conductors by irradiation with 61–74 MeV Ag ions. The ion tracks are observed by transmission electron microscopy to be elongated but discontinuous. The in-field transport critical current (I_c) is enhanced significantly for fields applied parallel to the irradiation direction with a broad peak appearing in the magnetic field-angle dependence of the critical current, coinciding with the irradiation direction. The zero-field I_c is typically reduced somewhat, however annealing at 200 °C partially restores this and enhances the in-field I_c even for field parallel to the irradiation direction. Lower energies tend to produce a weaker peak, but also retain the zero-field I_c to a greater extent, consistent with a trend of greater discontinuity in the ion tracks.     

Effective utilization of spray pyrolyzed CeO2 as optically passive counter electrode for enhancing optical modulation of WO3

Nanocrystalline cerium oxide (CeO₂) thin films were deposited onto the fluorine doped tin oxide coated glass substrates using methanolic solution of cerium nitrate hexahydrate precursor by a simple spray pyrolysis technique. Thermal analysis of the precursor salt showed the onset of crystallization of CeO₂ at 300 °C. Therefore, cerium dioxide thin films were prepared at different deposition temperatures from 300 to 450 °C. Films were transparent (T ~ 80%), polycrystalline with cubic fluorite crystal structure and having band gap energy (Eg) in the range of 3.04–3.6 eV. The different morphological features of the film obtained at various deposition temperatures had pronounced effect on the ion storage capacity (ISC) and electrochemical stability. The larger film thickness coupled with adequate degree of porosity of CeO₂ films prepared at 400 °C showed higher ion storage capacity of 20.6 mC cm^? 2 in 0.5 M LiClO₄ + PC electrolyte. Such films were also electrochemically more stable than the other studied samples. The Ce⁴⁺/Ce³⁺ intervalancy charge transfer mechanism during the bleaching–lithiation of CeO₂ film was directly evidenced from X-ray photoelectron spectroscopy. The optically passive behavior of the CeO₂ film (prepared at 400 °C) is affirmed by its negligible transmission modulation upon Li⁺ ion insertion/extraction, irrespective of the extent of Li⁺ ion intercalation. The coloration efficiency of spray deposited tungsten oxide (WO₃) thin film is found to enhance from 47 to 53 cm² C^? 1 when CeO₂ is coupled with WO₃ as a counter electrode in electrochromic device. Hence, CeO₂ can be a good candidate for optically passive counter electrode as an ion storage layer.     

Grain size of nanocrystalline YSZ buffer layers fabricated by ion beam deposition

Amorphous or nanocrystalline thin films are capable to be efficient diffusion barrier layers for YBCO coated conductors of ion beam assisted deposition route. Nanocrystalline Yttria-Stabilized Zirconia (YSZ) buffer layers were fabricated by the ion beam deposition. Kr and Ar gases were utilized for the dual Kaufman type sputtering ion sources sequently. Both of the ion beams were fixed at 200 mA, while the ion energy was in the range of 450–2000 eV. The thickness of the YSZ buffer layers was several hundreds of nanometers. The grain size of YSZ thin films, which varied from 2 to 20 nm, was calculated by Scherrer Formulation based on the X-ray diffraction measurement results. The grain size always decreased at first and then increased when the ion energy was increased. In the cases Kr gas was utilized and Ar gas was utilized, the grain size reached its minimum value at the ion energy of about 1800 eV and 1000 eV, respectively. Such phenomenon was discussed using the thermodynamic theory of thin film nucleation. Deposition rate and substrate temperature were the two chief variables of the critical nuclei concentration and grain size.     

Homoepitaxial growth of MOD-YBCO thick films on evaporated and MOD templates

We have prepared metal organic deposition (MOD)-YBCO thick films by repeating the coating-pyrolysis-crystallization procedure onto ～100-nm-thick evaporated and MOD templates. Surface morphology of the template was found to strongly affect the homoepitaxial growth of MOD-YBCO layers on the template; namely, the epitaxial growth of MOD-YBCO on the evaporated template was much easier than that on the MOD template. A 220-nm-thick epitaxial MOD-YBCO film was successfully prepared on the 100-nm-thick evaporated-YBCO template to obtain a 320-nm-thick YBCO film, which exhibited J_c = 2.44 MA/cm² and I_c = 78 A/cm. The I_c value has significantly increased from 37 A/cm for the evaporated-template.     

Structural origin of perpendicular magnetic anisotropy in Ni–W thin films

The magnetic properties and microstructure of electrodeposited Ni–W thin films (0–11.7 at% W in composition) were studied. The film structures were divided into three regions: an FCC nanocrystalline phase (0–2 at% W), a transition region from FCC nanocrystalline to amorphous phase (2–7 at% W), and an amorphous phase (>7 at% W). In the transition region, (4–5 at% W) films with perpendicular magnetic anisotropy (PMA) were found. The saturation magnetization, magnetic anisotropy field, perpendicular magnetic anisotropy and perpendicular coercivity for a typical Ni–W film (4.5 at% W) were 420 kA/m, 451 kA/m, 230 kJ/m and 113 kA/m, respectively. The microstructure of Ni–W films with PMA is composed of isolated columnar crystalline grains (27–36 nm) with the FCC phase surrounded by the Ni–W amorphous phase. The appearance of the interface between the magnetic core of Ni crystalline grains and the Ni–W non-magnetic boundary layer seems to be the driving mechanism for the appearance of PMA. The origin of PMA in Ni–W films is mainly attributed to the magnetoelastic anisotropy associated with in-plane internal stress and positive magnetostriction. The secondary source of PMA is believed to be the magnetocrystalline anisotropy of 〈1 1 1〉 columnar grains and its shape magnetic anisotropy. It is concluded that Ni–W electrodeposited films (4–5 at% W) may be applicable for perpendicular magnetic recording media.     

Structural and magnetic properties of thin epitaxial Fe films on (1 1 0) GaAs prepared by metalorganic chemical vapor deposition

Iron films have been grown on (1 1 0) GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition at substrate temperatures (T_s) between 135°C and 400°C. X-ray diffraction (XRD) analysis showed that the Fe films grown at T_s between 200°C and 330°C were single crystals. Amorphous films were observed at T_s below 200°C and it was not possible to deposit films at T_s above 330°C. The full-width at half-maximum of the rocking curves showed that crystalline qualities were improved at T_s above 270°C. Single crystalline Fe films grown at different substrate temperature showed different structural behaviors in XRD measurements. Iron films grown at T_s between 200°C and 300°C showed bulk α-Fe like behavior regardless of film thickness (100–6400 Å). Meanwhile, Fe films grown at 330°C (144 and 300 Å) showed a biaxially compressed strain between substrate and epilayer, resulting in an expanded inter-planar spacing along the growth direction. Magnetization measurements showed that Fe films (>200 Å) grown at 280°C and 330°C were ferromagnetic with the in-plane easy axis along the [1 1 0] direction. For the thinner Fe films (⩽200 Å) regardless of growth temperature, square loops along the [1 0 0] easy axis were very weak and broad.