Hydrazine reduced exfoliated graphene/graphene oxide layers and?magnetoconductance measurements of Ge-supported graphene layers

Inexpensive production and characteristic magnetoconductance fluctuation of Ge-supported stable graphene/graphene oxide layers are being reported. The changeover from graphite to graphene oxide structure during synthesis was evident from X-ray diffraction patterns whereas development of mono and bilayer graphene/graphene oxide was confirmed by electron microscopy studies. Responding to applied magnetic fields (up to 0.3 T), the Ge-supported graphene layers are shown to exhibit prominent magnetoconductance steps and are attributed to the alteration of Landau levels across the Fermi surface. While low-cost fabrication process is attractive for large scale production, the advantage of short synthesis time and understanding magneto-transport mechanism would find relevance in graphene-based nanodevices and circuits.     

Concept of infrared photodetector based on graphene–graphene nanoribbon structure

We study the mechanisms of photoconductivity in graphene layer–graphene nanoribbon–graphene layer (GL–GNR–GL) structures with the i-type gapless GL layers as sensitive elements and I-type GNRs as barrier elements. The effects of both an increase in the electron and hole densities under infrared illumination and the electron and hole heating and cooling in GLs are considered. The device model for a GL–GNR–GL photodiode is developed. Using this model, the dark current, photocurrent, and responsivity are calculated as functions of the structure parameters, temperature, and the photon energy. The transition from heating of the electron–hole plasma in GLs to its cooling by changing the incident photon energy can result in the change of the photoconductivity sign from positive to negative. It is demonstrated that GL–GNR–GL photodiodes can be used in effective infrared and terahertz detectors operating at room temperature. The change in the photoconductivity sign can be used for the discrimination of the incident radiation with the wavelength 2–3 μm and 8–12 μm.     

Free-standing optoelectronic graphene–CdS–graphene oxide composite paper produced by vacuum-assisted self-assembly

Free-standing optoelectronic graphene–CdS–graphene oxide (G–CdS–GO) composite papers were prepared by vacuum-assisted self-assembly. G–CdS hybrids were first prepared by a hydrothermal method and GO acts as a dispersant which makes it easier to disperse them to form relatively stable aqueous suspensions for fabricating paper. Transmission electron microscopy shows that CdS quantum dots (QDs) with an average size of approximately 1–2 nm were distributed uniformly on the graphene sheets. Photoluminescence measurements for the as-prepared G–CdS–GO composite paper showed that the surface defect related emissions of attached CdS QDs decrease and blue shift obviously due to the change in particle size and the interaction of the surface of the CdS QDs with both the GO and the graphene sheets. The resulting paper holds great potential for applications in thin film solar cells, sensors, diodes, and so on.     

Formation of graphene quantum dots by “Planting” hydrogen atoms at a graphene nanoribbon

Different technological approaches for creating graphene quantum dots by the adsorption of hydrogen atoms are considered. The adsorption can occur both at convex portions of a distorted graphene nanoribbon and in the structure formed by two distorted graphene nanoribbon rows superimposed on each other at the places free from the ribbon crossings. It is shown that settlement of hydrogen atoms at convex portions of the nanoribbons is energetically favorable. This gives rise to the creation of insulating graphane (CH) nanodomains separating the conducting regions. As a result, a graphene quantum dot appears. The variation of the electron spectra of graphene quantum dots with the length of these graphane regions is discussed.     

Is graphene on copper doped?

Angle‐resolved photoemission spectroscopy (ARPES) and X‐ray photoemission spectroscopy have been used to characterise epitaxially ordered graphene grown on copper foil by low‐pressure chemical vapour deposition. A short vacuum anneal to 200 °C allows observation of ordered low energy electron diffraction patterns. High quality Dirac cones are measured in ARPES with the Dirac point at the Fermi level (undoped graphene). Annealing above 300 °C produces n‐type doping in the graphene with up to 350 meV shift in Fermi level, and opens a band gap of around 100 meV.

     

Preparation of SnO2–graphene from SnS–graphene oxide for enhanced reversible lithium ion storage

SnO₂–graphene nanocomposites (SnO₂–GNS) have been prepared through a simple hydrothermal reaction with SnS–graphene oxide composites as the precursor. The composite material as prepared was characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, Brunauer–Emmett–Teller analysis, and thermogravimetric analysis. The results indicate that SnO₂ nanoparticles possess a good dispersion on the surface of graphene. Electrochemical tests demonstrate the high reversible lithium ion storage properties of SnO₂–GNS. The nanocomposites retained a reversible capacity of 503 mAh?g^?1 after 40 cycles. Moreover, the composite material exhibited higher capacity and better cyclic performance compared to free SnO₂ nanoparticles physically mixed with graphene in the relative weight ratio. The results suggest that the combination of SnO₂ and graphene leads to synergistic performance, which enhances lithium ion storage properties of the overall system.     

基于graphene条带的硅纳米结构

采用分子动力学模拟方法研究了graphene条带上生长硅纳米结构的过程,分析了不同温度下硅原子在graphene条带边沿生成的新型纳米结构.研究表明,随机分布的硅原子吸附到锯齿型graphene条带边沿在不同的温度T下可生成不同类型的硅纳米结构：300K≤T<2000K时形成无规则的团簇,2000K≤T≤2800K时形成单原子链结构,2800K<T<3900K时形成含缺陷的硅链结构,T≥3900K时硅原子逐渐替代条带边沿的碳原子直至graphene条带破坏.而硅原子吸附到扶手椅型graphene条带边沿在300K≤T<3000 K内仅能形成非链状的不定型的硅纳米结构. 关键词： graphene 硅 纳米结构 分子动力学模拟     

P–n junction characteristics of graphene oxide and reduced graphene oxide on n-type Si(111)

The semiconductor behavior of graphene oxide (GO) and reduced graphene oxide (RGO) synthesized by the Hummers method on n-type Si(111) were investigated. Graphene oxide is a product of the oxidation of graphite, during which numerous oxygen functional groups bond to the carbon plane during oxidation. RGO was prepared by adding excess hydrazine to the GO showing p-type semiconductor material behavior. In the C–O bond, the O atom tends to pull electrons from the C atom, leaving a hole in the carbon network. This results in p-type semiconductor behavior of GO, with the carrier concentration dependent upon the degree of oxidation. The RGO was obtained by removing most of the oxygen-containing functionalities from the GO using hydrazine. However, oxygen remaining on the carbon plane caused the RGO to exhibit p-type behavior. The I–V characteristics of GO and RGO deposited on n-type Si(111) forming p–n junctions exhibited different turn-on voltages and slope values.     

Selective spectroscopy of tunneling transitions between the Landau levels in vertical double-gate graphene–boron nitride–graphene heterostructures

The spectral and total electron densities of states in two-dimensional FeAs clusters, which simulate iron-based superconductors, have been calculated using the generalized quantum Monte Carlo algorithm within the full two-orbital model. Spectra have been reconstructed by solving the integral equation relating the Matsubara Green’s function and spectral density by the method combining the gradient descent and Monte Carlo algorithms. The calculations have been performed for clusters with dimensions up to 10 × 10 FeAs cells. The profiles of the Fermi surface for the entire Brillouin zone have been presented in the quasiparticle approximation. Data for the total density of states near the Fermi level have been obtained. The effect of the interaction parameter, size of the cluster, and temperature on the spectrum of excitations has been studied.     

The Aharonov–Bohm effect in graphene rings

This is a review of electronic quantum interference in mesoscopic ring structures based on graphene, with a focus on the interplay between the Aharonov–Bohm effect and the peculiar electronic and transport properties of this material. We first present an overview on recent developments of this topic, both from the experimental as well as the theoretical side. We then review our recent work on signatures of two prominent graphene-specific features in the Aharonov–Bohm conductance oscillations, namely Klein tunneling and specular Andreev reflection. We close with an assessment of experimental and theoretical development in the field and highlight open questions as well as potential directions of the developments in future work.     

Geometrically induced π-band splitting in graphene superlattices

According to band folding analyses, the graphene superlattices can be differed by whether the Dirac points are folded to Γ point or not. In previous studies, the inversion symmetry preserved defects open bandgap in the former superlattices while they cannot in the latter ones. In this paper, by using density functional theory with generalized gradient approximation, we have carefully studied the electronic properties of the latter graphene superlattices, in which the defects would induce π-band splitting to get the π_a1–π_a2 and π_z1–π_z2 band sets. Based on our detailed studies, such splitting could be attributed to the geometrically induced bond-symmetry breaking. In addition, these band sets could be shifted toward each other by the methodology of strain engineering. A bandgap would be opened once the band sets start to overlap. Then,its gap width could be continuously enlarged by enhancing strain until reaching the maximum value determined by the defect density. These studies contribute to the bandstructure engineering of graphene-based nanomaterials, which would be interesting to call for further investigations on both theory and experiment.     

Correlated insulating phases in the twisted bilayer graphene

We review analytical and numerical studies of correlated insulating states in twisted bilayer graphene, focusing on real-space lattice models constructions and their unbiased quantum many-body solutions. We show that by constructing localized Wannier states for the narrow bands, the projected Coulomb interactions can be approximated by interactions of cluster charges with assisted nearest neighbor hopping terms. With the interaction part only, the Hamiltonian is SU(4)symmetric considering both spin and valley degrees of freedom. In the strong coupling limit where the kinetic terms are neglected, the ground states are found to be in the SU(4) manifold with degeneracy. The kinetic terms, treated as perturbation, break this large SU(4) symmetry and propel the appearance of intervalley coherent state, quantum topological insulators, and other symmetry-breaking insulating states. We first present the theoretical analysis of moiré lattice model construction and then show how to solve the model with large-scale quantum Monte Carlo simulations in an unbiased manner. We further provide potential directions such that from the real-space model construction and its quantum many-body solutions how the perplexing yet exciting experimental discoveries in the correlation physics of twisted bilayer graphene can be gradually understood. This review will be helpful for the readers to grasp the fast growing field of the model study of twisted bilayer graphene.     

Hidden Kekulé ordering of adatoms on graphene

Electronic and transport properties of Graphene, a one-atom thick crystalline material, are sensitive to the presence of atoms adsorbed on its surface. An ensemble of randomly positioned adatoms, each serving as a scattering center, leads to the Boltzmann–Drude diffusion of charge determining the resistivity of the material. An important question, however, is whether the distribution of adatoms is always genuinely random. In this Communication we demonstrate that dilute adatoms on graphene may have a tendency towards a spatially correlated state with a hidden Kekulé mosaic order. This effect emerges from the interaction between the adatoms mediated by the Friedel oscillations of the electron density in graphene. The onset of the ordered state, as the system is cooled below the critical temperature, is accompanied by the opening of a gap in the electronic spectrum of the material, dramatically changing its transport properties.     

神奇材料graphene在室温下出现量子霍尔效应

graphene是一种由单层碳原子构成的材料，由于具有很多奇异特性，而且其中的电子在很多方面如同无质量的狄拉克费米子，因此近来备受关注。最近又传出关于它的惊人发现，graphene在室温下出现量子霍尔效应。     

Friction anisotropy dependence on lattice orientation of graphene

The observation of friction anisotropy on graphene by friction measurement at atomic scale has been reported in this paper.Atomic-scale friction measurement revealed friction anisotropy with a periodicity of 60°,which is consistent with the hexagonal periodicity of the graphene.Both experiments and theory show that the value of the friction force is related to the graphene lattice orientation,and the friction force along armchair orientation is also larger than the one along zigzag orientation.These results will play a critical role in the use of graphene to manufacture nanoscale devices.     

Electromagnetic waves reflection,transmission and absorption by graphene–magnetic semiconductor–graphene sandwich-structure in magnetic field: Faraday geometry

Electrodynamic properties of the graphene–magnetic semiconductor–graphene sandwich-structure have been investigated theoretically with taking into account the dissipation processes. Influence of graphene layers on electromagnetic waves propagation in graphene–semi-infinte magnetic semiconductor and graphene–magnetic semiconductor–graphene sandwich-structure has been analyzed. Frequency and field dependences of the reflectance, transmittance and absorbtance of electromagnetic waves by such structure have been calculated. The size effects associated with the thickness of the structure have been analyzed. The possibility of efficient control of electrodynamic properties of graphene–magnetic semiconductor–graphene sandwich-structure by an external magnetic field has been shown.     

Helical-edge transport near ν = 0 of monolayer graphene

The complex nature of filling factor ν = 0 of monolayer graphene is studied in magnetotransport experiments. As a function of perpendicular magnetic field a metal-insulator transition is observed, which is attributed to disorder-induced Landau level broadening in the canted antiferromagnetic phase. In the metallic regime a separation of the zeroth Landau level appears and signs of the quantum spin Hall effect are seen near ν = 0. In addition to local transport, nonlocal transport experiments show results being consistent with helical edge transport.     

Gate-dependent photoresponse in self-assembled graphene p–n junctions

The intrinsic photocurrent generation mechanism of a self-assembled graphene p–n junction operating at 1.55 μm is investigated experimentally.It is concluded that both a photovoltage effect and a photothermoelectric effect contribute to the final photocurrent.The photocurrent signal at the p–n junction was found to be dominated by photothermoelectric current,arising from different self-assembled doping levels.     

Fabrication and electrochemical performance of graphene–ZnO nanocomposites

Graphene–ZnO nanocomposites were synthesized successfully through a one-step solvothermal approach. The morphology, structure, and composition of the prepared nanocomposites were investigated by scanning electron microscopy(SEM), transmission electron microscope(TEM), laser micro Raman spectroscopy, and Fourier transform infra-red spectroscopy(FT-IR). The outcomes confirmed that this approach is comparatively steady, practicable, and operable compared with other reported methods. The electrochemical performance of the graphene-ZnO electrodes was analyzed through cyclic voltammetry, altering-current(AC) impedance, and chronopotentiometry tests. The graphene–ZnO electrodes exhibited an improved electrode performance with higher specific capacitance(115 F·g-1), higher electrochemical stability, and higher energy density than the graphene electrodes and most reported graphene–ZnO electrodes. Graphene–ZnO nanocomposites have a steady reversible charge/discharge behavior, which makes them promising candidates for electrochemical capacitors(ECs).